Nanophotonics: Single-nanowire electrically driven lasers
|
|
- Sherman Clark
- 5 years ago
- Views:
Transcription
1 Nanophotonics: Single-nanowire electrically driven lasers Ivan Stepanov June 19, 2010 Single crystaline nanowires have unique optic and electronic properties and their potential use in novel photonic and electronic devices is being extensively investigated. The first demonstration of optically pumped nanowire lasers generated great excitement. Electrical pumping is however very desireable as it enables more compact systems usable in electronic devices. Massproduced telecommunication devices, information storage devices and specific tools using lasers - all rely on electrical power supply. The article [1] presents the first study of the possibility to pump single-crystal cadmium sulfide nanowires electrically and shows very promicing results. Electrically driven nanowire laser To understand how the actual object of the article, the single-nanowire electrically driven laser, is operated let us take a look at the properties of a single free standing nanowire that make it usable as a laser. The focus of the article was on cadmium sulphide (CdS) nanowires with a diameter of nm and a wurtzite structure with a [100] growth axis. A schematic drawing of the nanowire is given in the figure 1(a). The nanowire can support lasing for a number reasons: the material of the nanowire is a semiconductor and can be a gain medium, the nanowire acts as a waveguide (see figure 1(a)) and the two flat ends (assumed they are flat) act as mirrors of a Fabry-Perot cavity. CdS can act as a gain medium because it is a semiconductor with a direct band gap of 2.42 ev at 300K [2]. If the electrons are excited from the valence band into the conducting band they can recombine with the holes accompanied by spontaneous or stimulated emission. The function as a waveguide is provided by the fact that a nanowire with the refractive index n (for λ = 510nm) fulfills the requirement 1 (πd/λ)(n 2 1 n 2 0) 0,5 < 2.4, where D is the nanowire diameter, λ is the wavelength and n 0 is the refractive index of the surrounding medium. The flat ends of the nanowire 1
2 act as partially reflecting mirrors because of the difference in the refractive index and build a Fabry-Perot cavity with the length L. A Fabry-Perot cavity will support optical modes that fulfill the condition m(λ/2n 1 ) = L, where m is an integer. Figure 1: Optical properties. (a)schematic showing a nanowire as an optical waveguide with cleaved ends defining a Fabry-Perot cavity (b) SEM image of a cleaved CdS nanowire end. Scale bar 100 nm. (c) Room-temperature photoluminescence image of a CdS nanowire excited about 15 mm away from the nanowire end. Scale bar, 5 µm. Inset, an optical image of the nanowire obtained with white-light illumination. (d) Photoluminescence spectra obtained from the body of the nanowire (blue) and the end of the nanowire (green) at low pump power (10 mw). Adapted from [1] The paper presents two ways to excite CdS: optical and electrical pumping. For both pumping ways the measurements are presented and compared with each other. The photoluminescence or the electroluminescence were measured using epifluorescence microscopy. Optical pumping of nanowire lasers is proven pumping concept [3] and was used by the group to verify the assumptions mentioned above and to show that the used nanowires can act as Fabry-Perot cavities and support stimulated emission. During the optical excitation the nanowire was first pumped about 15 µm from the nanowire end with a highly focused laser beam. Significant emission was measured at the position of the excitation and at the end of the nanowire (figure 1(c)). The fact that emission is only observed at the excitation point and at the nanowire end confirms the assumption that the body of the nanowire acts as a waveguide. The following measurements were conducted under uniform pumping illumination. At low excitation power the photoluminescence spectra recorded from the body and from the end of the nanowire 2
3 are broad peaks at 512 nm and 542 nm respectively as shown in the figure 1 (d). The positions of the peaks are consistent with the room-temperature band-edge emission of CdS with red-shift observed at the end of the nanowire due to reabsorption. With increasing excitation power the emission at the end of the nanowire increases superlinearly and the broad emission peak becomes overlaid by periodic intensity variation. The spacing between the observed peaks is consistent with the assumption that the ends of the nanowire create a Fabry-Perot cavity with the length L. Measurements with nanowires of different length L also confirmed that the mode spacing is inversely proportional to L. The appearance of sharp modes in superlinear regime is also an indicator for amplified spontaneous emission. Experiment at low temperatures and at higher excitation powers also shown that a single-mode operation with the line width limited by the instrument resolution is possible. In summary the optical pumping experiments confirmed that the nanowire acts as a waveguide with its end forming a Fabry-Perot cavity and that the body of the CdS nanowire can have the function of the gain medium with the possibility of a single-mode operation under certain conditions. Significantly new results are presented on the electrically driven nanowire lasers. Similar to conventional semiconductor lasers electrical pumping is based on injection of electrons and holes into the semiconductor. To achieve this a system schematically presented in the figure 2 (a) was created. The hetero-junction needed for injection is produced by putting n-cds nanowires on the heavily p-doped Si substrate. On top of this structure nm of aluminium oxide, 40 nm titanium and 200 nm gold are placed by electron beam-lithography and electron-beam evaporation. One end of the nanowire is left uncovered to allow optical measurements, figure 2(b). If a voltage is apllied the electrons are injected over the Au/Ti-electrode and the holes are injected over the p-substrate. Because of the insulating aluminium oxide layer the current is forced through the NWsubstrate junction. Electrical measurements show a behavior typical for p-n diodes with a forward bias turn-on voltage of 2-5 V (inset of figure 2(c)). The measurements of the electroluminescence at the end of the nanowire show an initial increase of the intensity at 90 µa and a rapid non-linear increase at 200 µa. Similar to optical experiments the spectral measurements show a broad peak at low excitation currents and the appearance of sharp modes after the current has reached 200 µa. The spectrum shows a dominant peak at nm and the line width limited by the instrument resolution. The other peaks have lower intensity and are separated by mode spacings consistent with the mode spacings of a Fabry-Perot cavity of the provided length. 3
4 Figure 2: (a) Schematic showing the cross-section of the device structure. In this structure, electrons and holes can be injected into the CdS nanowire along the whole length from the top metal layer and the bottom p-si layer, respectively. (b) Top panel shows an optical image of a device described in (a). The arrow highlights the exposed CdS nanowire end. Scale bar, 5 µm. Bottom panel shows an electroluminescence image. (c) Emission intensity versus injection current. Inset shows current versus voltage for this device. (d) Electroluminescence spectra obtained from the nanowire end with injection currents of 120 ma (red) and 210 ma (green). The black arrows highlight Fabry-Perot cavity modes with an average spacing of 1.83 nm. The green spectrum is shifted upwards by 0.15 intensity units for clarity. Adapted from [1] History and prospects The published results show the worldwide first experiment in which electrical pumping of a semiconductor nanowire was sufficient enough for lasing. Moreover the electrical excitation could be provided along the whole nanowire. However prior to the publication some aspects used to create the electrically driven nanowire laser were successfully studied by other groups. Extensive studies of optical properties of nanowires made from different materials such as ZnO [4], GaN [5], ZnSe [6], InP [7] and GaAs [8] have been conducted. In optical 4
5 photoluminescence experiments similar to one described in the article many material and optical properties of semiconductor nanowires were measured such as band-edge emission, radiative efficiency, carrier and photon confinement. Demonstrations of the possibility to induce lasing in a single nanowire by optical pumping were published by a number of groups showing comparable results for different materials, for example GaN [9]. The first results by P. Yang s group at Berkeley on optically stimulated lasing in ensembles of ZnO nanowires were conducted in 2001 and were published in 2002 [10]. In their experiments nanowires were grown perpendicularly to the substrate by vapor-liquidsolid mechanism. The nanowires were then optically excited and the excitation power dependent photoluminescence spectra have been recorded. Figure 3: (A) Schematic illustration of the optical excitation and the emission of the nanowires. (B) Emission spectra of ZnO nanowires grown on α-plane sapphire substrate below and over the lasing threshold. The spectrum over the threshold is offset for easy comparison. [10] The observed dependence of the spectral behavior on the excitation power is similar to that observed in the optical experiments conducted by M. Liber s group. Above the threshold excitation power of about 40 kw/cm 2 the broad emission spectrum collapses to a narrow emission line at 380 nm. This transition is a clear indicator for lasing action. Electrical excitation followed by photon emission in nanowires was also demonstrated by M. Lieber s group. However prior to the publication of the paper review by us electrical excitation was achieved by crossing p- and n- nanowires so that the excitation region was limited to their crossing point. This excitation concept was first demonstrated by M. Lieber s group in 2001 for crossed p-n InP nanowires [11]. In a later paper [12] two InP nanowires, one of them synthesized as p-doped, the other one as n-doped, were crossed (by sequential deposition of dilute solutions with intermediate drying) on an insulating substrate and contacted by metal electrodes as shown in the inset of figure 4(b). 5
6 Figure 4: (a) Electroluminescence (EL) image of the light emitted from a forward-biased nanowire p-n junction at 2,5 V. Inset, photoluminescence (PL) image of the junction. Scale bars, 5µm. (b) EL intensity versus voltage. Inset, I-V characteristics; inset in this inset, FE-SEM image of the junction itself. Scale bar, 5 µm. The n-type and p-type nanowires forming this junction have diameters of 65 and 68 nm, respectively. [12] To confirm the doping-type of the wires two-gate measurements of the transport in the wires under different gate voltages were performed. The I-V curves of crossed nanowires (inset of figure 4(b)) show a clear rectification with the current onset at about 1.5 V showing that the electrical behavior is dominated by the p-n junction. The light emission from the spot of the p-n junction is shown in the figure 4(a) confirms the possibility of electrical excitation of semiconductor nanowires. The maximum of the measured electroluminescence is positioned at 820 nm and has a significant blue-shift from the bulk band-gap at 925 nm due to quantum confinement. However the localized charge-carrier injection and the heat generation at the junction prevent the device from being pumped above the threshold needed for lasing. In this sense our article represents a mile-stone on the way to applications based on nanowire lasers as it demonstrates the possibility of effective electrical pumping of the nanowire, a key future for the integration of the nanowires in microelectronic devices. The possible applications could be multi-colored light sources integrated into siliconbased microelectronics or lab-on-chip devices. This could have a huge impact on possibilities of laser-based applications like telecommunications, data storage and enable highly integrated chemical/biological sensors. There are however still issues that have to be addressed. The most important of them is that the laser cannot be driven substantially above threshold to achieve single-mode output at room temperature. The reason for this limitation is assumed to be the nonuniformity of the injection due to the CdS/p-Si and metal/cds junctions that still require optimization. Further only about 50 % of the nanowires are produced with flat ends and can serve as Fabry-Perot cavities. This value has to be increased in order to use nanowires reliably in applications. 6
7 Overall the article fulfills the claims of the introduction as the investigations of optical and electrical pumping clearly shows the feasibility of achieving electrically driven nanowire lasers and represent a big step towards the possible use of nanowire lasers in microelectronic devices. References [1] X. Duan, Y. Huang, R. Agarwal, C.M. Lieber, Nature, 421, p.241 (2003). [2] D. Lincot, Gary Hodes Chemical Solution Deposition of Semiconducting and Non- Metallic Films: Proceedings of the International Symposium The Electrochemical Society, [3] Huang, H. M. et al. Room-temperature ultraviolet nanowire nanolasers. Science 292, (2001). [4] P. Yang, H. Yan, S. Mao, R. Russo, J. Johnson, R. Saykally, N. Morris, J. Pham, R. He, H.-J. Choi, Adv. Funct. Mater. 12, 323 (2002) [5] H.W. Seo, S.Y. Bae, J. Park, H. Yang, K.S. Park, S. Kim, J. Chem. Phys. 116, 9492 (2002) [6] B. Xiang, H.Z. Zhang, G.H. Li, F.H. Yang, F.H. Su, R.M. Wang, J. Xu, G.W. Lu, X.C. Sun, Q. Zhao, D.P. Yu, Appl. Phys. Lett. 82, 3330 (2003) [7] M.S. Gudiksen, J. Wang, C.M. Lieber, J. Phys. Chem. B 106, 4036 (2002) [8] X. Duan, J. Wang, C.M. Lieber, Appl. Phys. Lett. 76, 1116 (2000) [9] J.C. Johnson, H.J. Choi, K.P. Knutsen, R.D. Schaller, P. Yang, R.J. Saykally, Nat. Mater. 1, 106 (2002) [10] M. Huang, S. Mao, H. Feick, H. Yan, Y. Wu, H. Kind, E. Weber, R. Russo, P. Yang, Science 292, 1897 (2001) [11] Y. Cui, C.M. Lieber, Science 851, 291 (2001) [12] Duan, X.,Huang, Y.,Wang, J., Cui, Y., Lieber, C.M. Indium phosphide nanowires as building blocks for nanoscale electronic and optoelectronic devices. Nature 409, (2001). 7
RECENTLY, nanowires have attracted great attention
146 IEEE JOURNAL OF QUANTUM ELECTRONICS, VOL. 42, NO. 2, FEBRUARY 2006 Analysis of Mode Quality Factors and Mode Reflectivities for Nanowire Cavity by FDTD Technique Miao-Qing Wang, Yong-Zhen Huang, Senior
More informationLuminous Equivalent of Radiation
Intensity vs λ Luminous Equivalent of Radiation When the spectral power (p(λ) for GaP-ZnO diode has a peak at 0.69µm) is combined with the eye-sensitivity curve a peak response at 0.65µm is obtained with
More informationNanowire Photonic Circuit Elements
Nanowire Photonic Circuit Elements Carl J. Barrelet,, Andrew B. Greytak,, and Charles M. Lieber*,, NANO LETTERS 2004 Vol. 4, No. 10 1981-1985 Department of Chemistry and Chemical Biology and DiVision of
More informationOptodevice Data Book ODE I. Rev.9 Mar Opnext Japan, Inc.
Optodevice Data Book ODE-408-001I Rev.9 Mar. 2003 Opnext Japan, Inc. Section 1 Operating Principles 1.1 Operating Principles of Laser Diodes (LDs) and Infrared Emitting Diodes (IREDs) 1.1.1 Emitting Principles
More informationPh 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS
Ph 77 ADVANCED PHYSICS LABORATORY ATOMIC AND OPTICAL PHYSICS Diode Laser Characteristics I. BACKGROUND Beginning in the mid 1960 s, before the development of semiconductor diode lasers, physicists mostly
More informationHybrid Single-Nanowire Photonic Crystal and Microresonator Structures
Hybrid Single-Nanowire Photonic Crystal and Microresonator Structures NANO LETTERS 2006 Vol. 6, No. 1 11-15 Carl J. Barrelet, Jiming Bao, Marko Lončar, Hong-Gyu Park, Federico Capasso,*, and Charles M.
More informationReview of Semiconductor Physics
Review of Semiconductor Physics k B 1.38 u 10 23 JK -1 a) Energy level diagrams showing the excitation of an electron from the valence band to the conduction band. The resultant free electron can freely
More informationFigure 1. Schematic diagram of a Fabry-Perot laser.
Figure 1. Schematic diagram of a Fabry-Perot laser. Figure 1. Shows the structure of a typical edge-emitting laser. The dimensions of the active region are 200 m m in length, 2-10 m m lateral width and
More informationLecture 6 Fiber Optical Communication Lecture 6, Slide 1
Lecture 6 Optical transmitters Photon processes in light matter interaction Lasers Lasing conditions The rate equations CW operation Modulation response Noise Light emitting diodes (LED) Power Modulation
More informationphotolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited by
Supporting online material Materials and Methods Single-walled carbon nanotube (SWNT) devices are fabricated using standard photolithographic techniques (1). Molybdenum electrodes (50 nm thick) are deposited
More informationECE 340 Lecture 29 : LEDs and Lasers Class Outline:
ECE 340 Lecture 29 : LEDs and Lasers Class Outline: Light Emitting Diodes Lasers Semiconductor Lasers Things you should know when you leave Key Questions What is an LED and how does it work? How does a
More informationKey Questions. What is an LED and how does it work? How does a laser work? How does a semiconductor laser work? ECE 340 Lecture 29 : LEDs and Lasers
Things you should know when you leave Key Questions ECE 340 Lecture 29 : LEDs and Class Outline: What is an LED and how does it How does a laser How does a semiconductor laser How do light emitting diodes
More informationUse of distributed Bragg reflectors to enhance Fabry Pérot lasing in vertically aligned ZnO nanowires
Appl Phys A (2013) 110:23 28 DOI 10.1007/s00339-012-7330-7 RAPID COMMUNICATION Use of distributed Bragg reflectors to enhance Fabry Pérot lasing in vertically aligned ZnO nanowires Jieying Kong Sheng Chu
More informationFunctional Materials. Optoelectronic devices
Functional Materials Lecture 2: Optoelectronic materials and devices (inorganic). Photonic materials Optoelectronic devices Light-emitting diode (LED) displays Photodiode and Solar cell Photoconductive
More informationPhotoconduction studies on GaN nanowire transistors under UV and polarized UV illumination
Chemical Physics Letters 389 (24) 176 18 www.elsevier.com/locate/cplett Photoconduction studies on GaN nanowire transistors under UV and polarized UV illumination Song Han, Wu Jin, Daihua Zhang, Tao Tang,
More informationIntroduction Fundamentals of laser Types of lasers Semiconductor lasers
ECE 5368 Introduction Fundamentals of laser Types of lasers Semiconductor lasers Introduction Fundamentals of laser Types of lasers Semiconductor lasers How many types of lasers? Many many depending on
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationBasic concepts. Optical Sources (b) Optical Sources (a) Requirements for light sources (b) Requirements for light sources (a)
Optical Sources (a) Optical Sources (b) The main light sources used with fibre optic systems are: Light-emitting diodes (LEDs) Semiconductor lasers (diode lasers) Fibre laser and other compact solid-state
More informationSUPPLEMENTARY INFORMATION
DOI: 1.138/NPHOTON.212.11 Supplementary information Avalanche amplification of a single exciton in a semiconductor nanowire Gabriele Bulgarini, 1, Michael E. Reimer, 1, Moïra Hocevar, 1 Erik P.A.M. Bakkers,
More informationLight Sources, Modulation, Transmitters and Receivers
Optical Fibres and Telecommunications Light Sources, Modulation, Transmitters and Receivers Introduction Previous section looked at Fibres. How is light generated in the first place? How is light modulated?
More informationVertical External Cavity Surface Emitting Laser
Chapter 4 Optical-pumped Vertical External Cavity Surface Emitting Laser The booming laser techniques named VECSEL combine the flexibility of semiconductor band structure and advantages of solid-state
More informationCavity QED with quantum dots in semiconductor microcavities
Cavity QED with quantum dots in semiconductor microcavities M. T. Rakher*, S. Strauf, Y. Choi, N.G. Stolz, K.J. Hennessey, H. Kim, A. Badolato, L.A. Coldren, E.L. Hu, P.M. Petroff, D. Bouwmeester University
More informationSemiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
More informationSUPPLEMENTARY INFORMATION
Room-temperature continuous-wave electrically injected InGaN-based laser directly grown on Si Authors: Yi Sun 1,2, Kun Zhou 1, Qian Sun 1 *, Jianping Liu 1, Meixin Feng 1, Zengcheng Li 1, Yu Zhou 1, Liqun
More informationNanowires for Quantum Optics
Nanowires for Quantum Optics N. Akopian 1, E. Bakkers 1, J.C. Harmand 2, R. Heeres 1, M. v Kouwen 1, G. Patriarche 2, M. E. Reimer 1, M. v Weert 1, L. Kouwenhoven 1, V. Zwiller 1 1 Quantum Transport, Kavli
More informationPhysics of Waveguide Photodetectors with Integrated Amplification
Physics of Waveguide Photodetectors with Integrated Amplification J. Piprek, D. Lasaosa, D. Pasquariello, and J. E. Bowers Electrical and Computer Engineering Department University of California, Santa
More informationGaAs polytype quantum dots
GaAs polytype quantum dots Vilgailė Dagytė, Andreas Jönsson and Andrea Troian December 17, 2014 1 Introduction An issue that has haunted nanowire growth since it s infancy is the difficulty of growing
More informationVertical-cavity surface-emitting lasers (VCSELs)
78 Technology focus: Lasers Advancing InGaN VCSELs Mike Cooke reports on progress towards filling the green gap and improving tunnel junctions as alternatives to indium tin oxide current-spreading layers.
More informationExamination Optoelectronic Communication Technology. April 11, Name: Student ID number: OCT1 1: OCT 2: OCT 3: OCT 4: Total: Grade:
Examination Optoelectronic Communication Technology April, 26 Name: Student ID number: OCT : OCT 2: OCT 3: OCT 4: Total: Grade: Declaration of Consent I hereby agree to have my exam results published on
More informationLecture 18: Photodetectors
Lecture 18: Photodetectors Contents 1 Introduction 1 2 Photodetector principle 2 3 Photoconductor 4 4 Photodiodes 6 4.1 Heterojunction photodiode.................... 8 4.2 Metal-semiconductor photodiode................
More informationSurface-Emitting Single-Mode Quantum Cascade Lasers
Surface-Emitting Single-Mode Quantum Cascade Lasers M. Austerer, C. Pflügl, W. Schrenk, S. Golka, G. Strasser Zentrum für Mikro- und Nanostrukturen, Technische Universität Wien, Floragasse 7, A-1040 Wien
More informationNanoscale materials have shown unprecedented capabilities
pubs.acs.org/nanolett High Quantum Efficiency of Band-Edge Emission from ZnO Nanowires Daniel J. Gargas,, Hanwei Gao,, Hungta Wang, and Peidong Yang*,, Department of Chemistry, University of California,
More informationAn electrically pumped germanium laser
An electrically pumped germanium laser The MIT Faculty has made this article openly available. Please share how this access benefits you. Your story matters. Citation As Published Publisher Camacho-Aguilera,
More informationIntroduction to Optoelectronic Devices
Introduction to Optoelectronic Devices Dr. Jing Bai Assistant Professor Department of Electrical and Computer Engineering University of Minnesota Duluth October 30th, 2012 1 Outline What is the optoelectronics?
More informationBistability in Bipolar Cascade VCSELs
Bistability in Bipolar Cascade VCSELs Thomas Knödl Measurement results on the formation of bistability loops in the light versus current and current versus voltage characteristics of two-stage bipolar
More informationSemiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in
Semiconductor Lasers Semiconductors were originally pumped by lasers or e-beams First diode types developed in 1962: Create a pn junction in semiconductor material Pumped now with high current density
More informationInP-based Waveguide Photodetector with Integrated Photon Multiplication
InP-based Waveguide Photodetector with Integrated Photon Multiplication D.Pasquariello,J.Piprek,D.Lasaosa,andJ.E.Bowers Electrical and Computer Engineering Department University of California, Santa Barbara,
More informationApplication Instruction 002. Superluminescent Light Emitting Diodes: Device Fundamentals and Reliability
I. Introduction II. III. IV. SLED Fundamentals SLED Temperature Performance SLED and Optical Feedback V. Operation Stability, Reliability and Life VI. Summary InPhenix, Inc., 25 N. Mines Road, Livermore,
More informationLaser Diode. Photonic Network By Dr. M H Zaidi
Laser Diode Light emitters are a key element in any fiber optic system. This component converts the electrical signal into a corresponding light signal that can be injected into the fiber. The light emitter
More informationFIBER OPTICS. Prof. R.K. Shevgaonkar. Department of Electrical Engineering. Indian Institute of Technology, Bombay. Lecture: 18.
FIBER OPTICS Prof. R.K. Shevgaonkar Department of Electrical Engineering Indian Institute of Technology, Bombay Lecture: 18 Optical Sources- Introduction to LASER Diodes Fiber Optics, Prof. R.K. Shevgaonkar,
More informationSUPPORTING INFORMATION
SUPPORTING INFORMATION Vertically Emitting Indium Phosphide Nanowire Lasers Wei-Zong Xu,2,4, Fang-Fang Ren,2,4, Dimitars Jevtics 3, Antonio Hurtado 3, Li Li, Qian Gao, Jiandong Ye 2, Fan Wang,5, Benoit
More informationSemiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I
Semiconductor Optical Communication Components and Devices Lecture 18: Introduction to Diode Lasers - I Prof. Utpal Das Professor, Department of lectrical ngineering, Laser Technology Program, Indian Institute
More informationSUPPLEMENTARY INFORMATION
Electrically pumped continuous-wave III V quantum dot lasers on silicon Siming Chen 1 *, Wei Li 2, Jiang Wu 1, Qi Jiang 1, Mingchu Tang 1, Samuel Shutts 3, Stella N. Elliott 3, Angela Sobiesierski 3, Alwyn
More informationEmission Rate Variation and Efficiency Measurement in TiO 2 Light Emitting Diode
Emission Rate Variation and Efficiency Measurement in TiO 2 Light Emitting Diode S.N. Ariffin 1,*, N.A.M.A. Hambali 1, M.H.A. Wahid 1, M.M. Shahimin 1, U.K. Sahbudin 1, and N.N. A.Saidi 1 1 Semiconductor
More informationChapter 1. Introduction. Lambert K. van Vugt PhD thesis 2007 Optical properties of semiconducting nanowires
7 Chapter 1 Introduction 8 Chapter 1 Introduction 1.1 Nano science and technology The integrated circuit technology of today is based on a top-down approach where elements such as interconnects and transistors
More informationSandia National Laboratories MS 1153, PO 5800, Albuquerque, NM Phone: , Fax: ,
Semiconductor e-h Plasma Lasers* Fred J Zutavern, lbert G. Baca, Weng W. Chow, Michael J. Hafich, Harold P. Hjalmarson, Guillermo M. Loubriel, lan Mar, Martin W. O Malley, G. llen Vawter Sandia National
More informationLEDs, Photodetectors and Solar Cells
LEDs, Photodetectors and Solar Cells Chapter 7 (Parker) ELEC 424 John Peeples Why the Interest in Photons? Answer: Momentum and Radiation High electrical current density destroys minute polysilicon and
More informationVertical Cavity Surface Emitting Laser (VCSEL) Technology
Vertical Cavity Surface Emitting Laser (VCSEL) Technology Gary W. Weasel, Jr. (gww44@msstate.edu) ECE 6853, Section 01 Dr. Raymond Winton Abstract Vertical Cavity Surface Emitting Laser technology, typically
More informationOptoelectronics ELEC-E3210
Optoelectronics ELEC-E3210 Lecture 4 Spring 2016 Outline 1 Lateral confinement: index and gain guiding 2 Surface emitting lasers 3 DFB, DBR, and C3 lasers 4 Quantum well lasers 5 Mode locking P. Bhattacharya:
More informationSupporting Information Content
Electronic Supplementary Material (ESI) for Journal of Materials Chemistry C. This journal is The Royal Society of Chemistry 2018 Supporting Information Content 1. Fig. S1 Theoretical and experimental
More informationImproved Output Performance of High-Power VCSELs
Improved Output Performance of High-Power VCSELs 15 Improved Output Performance of High-Power VCSELs Michael Miller This paper reports on state-of-the-art single device high-power vertical-cavity surfaceemitting
More informationIntegrated into Nanowire Waveguides
Supporting Information Widely Tunable Distributed Bragg Reflectors Integrated into Nanowire Waveguides Anthony Fu, 1,3 Hanwei Gao, 1,3,4 Petar Petrov, 1, Peidong Yang 1,2,3* 1 Department of Chemistry,
More informationLarge spontaneous emission rate enhancement in a III-V antenna-led
Large spontaneous emission rate enhancement in a III-V antenna-led Seth A. Fortuna 1, Christopher Heidelberger 2, Nicolas M. Andrade 1, Eugene A. Fitzgerald 2, Eli Yablonovitch 1, and Ming C. Wu 1 1 University
More informationNGS-13, Guildford UK, July 2007
NGS-1, Guildford UK, July 7 Semiconductor light emitters for mid-ir spectral region -based Quantum Cascade Room temperature operated type-i QW -based light emitters with wavelength up to.4um L. Shterengas,
More informationPhotoluminescence spectroscopy and optical pumping of zinc oxide nanowires
Zinc Oxide Nanolaser Photoluminescence spectroscopy and optical pumping of zinc oxide nanowires Filip August Heitmann Master of Science in Electronics Submission date: February 2012 Supervisor: Helge Weman,
More informationOptical MEMS in Compound Semiconductors Advanced Engineering Materials, Cal Poly, SLO November 16, 2007
Optical MEMS in Compound Semiconductors Advanced Engineering Materials, Cal Poly, SLO November 16, 2007 Outline Brief Motivation Optical Processes in Semiconductors Reflectors and Optical Cavities Diode
More informationSemiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi
Semiconductor Optoelectronics Prof. M. R. Shenoy Department of Physics Indian Institute of Technology, Delhi Lecture - 26 Semiconductor Optical Amplifier (SOA) (Refer Slide Time: 00:39) Welcome to this
More informationDesign and Analysis of Resonant Leaky-mode Broadband Reflectors
846 PIERS Proceedings, Cambridge, USA, July 6, 8 Design and Analysis of Resonant Leaky-mode Broadband Reflectors M. Shokooh-Saremi and R. Magnusson Department of Electrical and Computer Engineering, University
More informationSUPPLEMENTARY INFORMATION
Transfer printing stacked nanomembrane lasers on silicon Hongjun Yang 1,3, Deyin Zhao 1, Santhad Chuwongin 1, Jung-Hun Seo 2, Weiquan Yang 1, Yichen Shuai 1, Jesper Berggren 4, Mattias Hammar 4, Zhenqiang
More informationDegradation analysis in asymmetric sampled grating distributed feedback laser diodes
Microelectronics Journal 8 (7) 74 74 www.elsevier.com/locate/mejo Degradation analysis in asymmetric sampled grating distributed feedback laser diodes Han Sung Joo, Sang-Wan Ryu, Jeha Kim, Ilgu Yun Semiconductor
More informationOptical Amplifiers. Continued. Photonic Network By Dr. M H Zaidi
Optical Amplifiers Continued EDFA Multi Stage Designs 1st Active Stage Co-pumped 2nd Active Stage Counter-pumped Input Signal Er 3+ Doped Fiber Er 3+ Doped Fiber Output Signal Optical Isolator Optical
More informationColor Mixing from Monolithically Integrated InGaN-based Light- Emitting Diodes by Local Strain Engineering
Color Mixing from Monolithically Integrated InGaN-based Light- Emitting Diodes by Local Strain Engineering Kunook Chung, Jingyang Sui, Brandon Demory, and Pei-Cheng Ku* Department of Electrical Engineering
More informationMode analysis of Oxide-Confined VCSELs using near-far field approaches
Annual report 998, Dept. of Optoelectronics, University of Ulm Mode analysis of Oxide-Confined VCSELs using near-far field approaches Safwat William Zaki Mahmoud We analyze the transverse mode structure
More informationHigh-power semiconductor lasers for applications requiring GHz linewidth source
High-power semiconductor lasers for applications requiring GHz linewidth source Ivan Divliansky* a, Vadim Smirnov b, George Venus a, Alex Gourevitch a, Leonid Glebov a a CREOL/The College of Optics and
More informationQuantum-Well Semiconductor Saturable Absorber Mirror
Chapter 3 Quantum-Well Semiconductor Saturable Absorber Mirror The shallow modulation depth of quantum-dot saturable absorber is unfavorable to increasing pulse energy and peak power of Q-switched laser.
More informationSpontaneous Hyper Emission: Title of Talk
Spontaneous Hyper Emission: Title of Talk Enhanced Light Emission by Optical Antennas Ming C. Wu University of California, Berkeley A Science & Technology Center Where Our Paths Crossed Page Nanopatch
More informationSUPPLEMENTARY INFORMATION
Room-temperature InP distributed feedback laser array directly grown on silicon Zhechao Wang, Bin Tian, Marianna Pantouvaki, Weiming Guo, Philippe Absil, Joris Van Campenhout, Clement Merckling and Dries
More informationPHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I
PHYSICAL ELECTRONICS(ECE3540) APPLICATIONS OF PHYSICAL ELECTRONICS PART I Tennessee Technological University Monday, October 28, 2013 1 Introduction In the following slides, we will discuss the summary
More informationLASER Transmitters 1 OBJECTIVE 2 PRE-LAB
LASER Transmitters 1 OBJECTIVE Investigate the L-I curves and spectrum of a FP Laser and observe the effects of different cavity characteristics. Learn to perform parameter sweeps in OptiSystem. 2 PRE-LAB
More informationSUPPLEMENTARY INFORMATION
In the format provided by the authors and unedited. Photon-triggered nanowire transistors Jungkil Kim, Hoo-Cheol Lee, Kyoung-Ho Kim, Min-Soo Hwang, Jin-Sung Park, Jung Min Lee, Jae-Pil So, Jae-Hyuck Choi,
More informationSupporting Information
Supporting Information High-Performance MoS 2 /CuO Nanosheet-on-1D Heterojunction Photodetectors Doo-Seung Um, Youngsu Lee, Seongdong Lim, Seungyoung Park, Hochan Lee, and Hyunhyub Ko * School of Energy
More informationOptical Sources and Detectors
Optical Sources and Detectors 1. Optical Sources Optical transmitter coverts electrical input signal into corresponding optical signal. The optical signal is then launched into the fiber. Optical source
More informationSynthesis of nanowires and nanotubes
Synthesis of nanowires and nanotubes Laser-assisted Catalytic Growth Source target with catalyst is evaporated by laser. Nanomaterials are collected on a cold finger. Synthesized semiconductor NWs - Si,
More informationSupplementary Information
Supplementary Information For Nearly Lattice Matched All Wurtzite CdSe/ZnTe Type II Core-Shell Nanowires with Epitaxial Interfaces for Photovoltaics Kai Wang, Satish C. Rai,Jason Marmon, Jiajun Chen, Kun
More informationAluminum nitride nanowire light emitting diodes: Breaking the. fundamental bottleneck of deep ultraviolet light sources
Supplementary Information Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources S. Zhao, 1 A. T. Connie, 1 M. H. T. Dastjerdi, 1 X. H. Kong,
More informationAll-Optical Clock Division Using Period-one Oscillation of Optically Injected Semiconductor Laser
International Conference on Logistics Engineering, Management and Computer Science (LEMCS 2014) All-Optical Clock Division Using Period-one Oscillation of Optically Injected Semiconductor Laser Shengxiao
More informationWhite Paper Laser Sources For Optical Transceivers. Giacomo Losio ProLabs Head of Technology
White Paper Laser Sources For Optical Transceivers Giacomo Losio ProLabs Head of Technology September 2014 Laser Sources For Optical Transceivers Optical transceivers use different semiconductor laser
More informationChapter 3 OPTICAL SOURCES AND DETECTORS
Chapter 3 OPTICAL SOURCES AND DETECTORS 3. Optical sources and Detectors 3.1 Introduction: The success of light wave communications and optical fiber sensors is due to the result of two technological breakthroughs.
More informationSemiconductor nanowires (NWs) synthesized by the
Direct Growth of Nanowire Logic Gates and Photovoltaic Devices Dong Rip Kim, Chi Hwan Lee, and Xiaolin Zheng* Department of Mechanical Engineering, Stanford University, California 94305 pubs.acs.org/nanolett
More informationHigh-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires
JOURNAL OF APPLIED PHYSICS 97, 084318 2005 High-resolution x-ray diffraction analysis of epitaxially grown indium phosphide nanowires T. Kawamura, a S. Bhunia, b and Y. Watanabe c Basic Research Laboratories,
More informationNano electro-mechanical optoelectronic tunable VCSEL
Nano electro-mechanical optoelectronic tunable VCSEL Michael C.Y. Huang, Ye Zhou, and Connie J. Chang-Hasnain Department of Electrical Engineering and Computer Science, University of California, Berkeley,
More informationSEMICONDUCTOR lasers and amplifiers are important
240 JOURNAL OF LIGHTWAVE TECHNOLOGY, VOL. 28, NO. 3, FEBRUARY 1, 2010 Temperature-Dependent Saturation Characteristics of Injection Seeded Fabry Pérot Laser Diodes/Reflective Optical Amplifiers Hongyun
More informationElectrically Pumped Single Transverse-Mode Coupled Waveguide Laser by Parity-time (PT) Symmetry
Electrically Pumped Single Transverse-Mode Coupled Waveguide Laser by Parity-time (PT) Symmetry Affiliations: Authors: R. Yao 1, C. Lee 2, V. Podolskiy 1, and W. Guo 1 * 1 Physics and Applied Physics Department,
More informationMAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI
MAHALAKSHMI ENGINEERING COLLEGE TIRUCHIRAPALLI - 621213 DEPARTMENT : ECE SUBJECT NAME : OPTICAL COMMUNICATION & NETWORKS SUBJECT CODE : EC 2402 UNIT III: SOURCES AND DETECTORS PART -A (2 Marks) 1. What
More informationA continuous-wave Raman silicon laser
A continuous-wave Raman silicon laser Haisheng Rong, Richard Jones,.. - Intel Corporation Ultrafast Terahertz nanoelectronics Lab Jae-seok Kim 1 Contents 1. Abstract 2. Background I. Raman scattering II.
More informationHigh brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh, C. Panja, P.T. Rudy, T. Stakelon and J.E.
QPC Lasers, Inc. 2007 SPIE Photonics West Paper: Mon Jan 22, 2007, 1:20 pm, LASE Conference 6456, Session 3 High brightness semiconductor lasers M.L. Osowski, W. Hu, R.M. Lammert, T. Liu, Y. Ma, S.W. Oh,
More informationImpact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b,
Impact of the light coupling on the sensing properties of photonic crystal cavity modes Kumar Saurav* a,b, Nicolas Le Thomas a,b, a Photonics Research Group, Ghent University-imec, Technologiepark-Zwijnaarde
More informationStrathprints Institutional Repository
Strathprints Institutional Repository Xu, Huiwen and Hurtado, Antonio and Wright, Jeremy B. and Li, Changyi and Liu, Sheng and Figiel, Jeffrey J. and Luk, Ting Shan and Brueck, Steven R. J. and Brener,
More informationSupplementary Materials for
advances.sciencemag.org/cgi/content/full/4/2/e1700324/dc1 Supplementary Materials for Photocarrier generation from interlayer charge-transfer transitions in WS2-graphene heterostructures Long Yuan, Ting-Fung
More informationVertical Nanowall Array Covered Silicon Solar Cells
International Conference on Solid-State and Integrated Circuit (ICSIC ) IPCSIT vol. () () IACSIT Press, Singapore Vertical Nanowall Array Covered Silicon Solar Cells J. Wang, N. Singh, G. Q. Lo, and D.
More informationDesign and fabrication of indium phosphide air-bridge waveguides with MEMS functionality
Design and fabrication of indium phosphide air-bridge waveguides with MEMS functionality Wing H. Ng* a, Nina Podoliak b, Peter Horak b, Jiang Wu a, Huiyun Liu a, William J. Stewart b, and Anthony J. Kenyon
More informationDevelopment of ZnO Infrared LED and Its Emissivity
Development of ZnO Infrared LED and Its Emissivity N.N.A. Saidi 1,*, M.H.A. Wahid 1, P. Poopalan 1, N.A.M.A. Hambali 1, M.M. Shahimin.1, U.K. Sahbudin 1, S.N. Ariffin 1, and Muhammad M. Ramli 1 1 Semiconductor
More informationLecture 4 INTEGRATED PHOTONICS
Lecture 4 INTEGRATED PHOTONICS What is photonics? Photonic applications use the photon in the same way that electronic applications use the electron. Devices that run on light have a number of advantages
More informationOPTICAL MODE STUDY OF GALIUM NITRIDE BASED LASER DIODES. A Senior Project presented to. the Faculty of the ELECTICAL ENGINEERING DEPARTMENT
OPTICAL MODE STUDY OF GALIUM NITRIDE BASED LASER DIODES A Senior Project presented to the Faculty of the ELECTICAL ENGINEERING DEPARTMENT California Polytechnic State University, San Luis Obispo In Partial
More informationImplant Confined 1850nm VCSELs
Implant Confined 1850nm VCSELs Matthew M. Dummer *, Klein Johnson, Mary Hibbs-Brenner, William K. Hogan Vixar, 2950 Xenium Ln. N. Plymouth MN 55441 ABSTRACT Vixar has recently developed VCSELs at 1850nm,
More informationSUPPLEMENTARY INFORMATION
SUPPLEMENTARY INFORMATION Supplementary Information Real-space imaging of transient carrier dynamics by nanoscale pump-probe microscopy Yasuhiko Terada, Shoji Yoshida, Osamu Takeuchi, and Hidemi Shigekawa*
More information2. Pulsed Acoustic Microscopy and Picosecond Ultrasonics
1st International Symposium on Laser Ultrasonics: Science, Technology and Applications July 16-18 2008, Montreal, Canada Picosecond Ultrasonic Microscopy of Semiconductor Nanostructures Thomas J GRIMSLEY
More informationHIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS
HIGH-EFFICIENCY MQW ELECTROABSORPTION MODULATORS J. Piprek, Y.-J. Chiu, S.-Z. Zhang (1), J. E. Bowers, C. Prott (2), and H. Hillmer (2) University of California, ECE Department, Santa Barbara, CA 93106
More informationLecture 9 External Modulators and Detectors
Optical Fibres and Telecommunications Lecture 9 External Modulators and Detectors Introduction Where are we? A look at some real laser diodes. External modulators Mach-Zender Electro-absorption modulators
More informationMicro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors
Micro-sensors - what happens when you make "classical" devices "small": MEMS devices and integrated bolometric IR detectors Dean P. Neikirk 1 MURI bio-ir sensors kick-off 6/16/98 Where are the targets
More information