Advancing Consumer Packaging Through Printable Electronics

Transcription

1 IPST Executive Conference, Atlanta, GA March 9-10, 2011 Advancing Consumer Packaging Through Printable Electronics Bernard Kippelen Professor, School of Electrical and Computer Engineering Director, Center for Organic Photonics and Electronics Georgia Institute of Technology EFRC 1

2 Center for Organic Photonics and Electronics Established in 2003 at the Georgia Institute of Technology Interdisciplinary approach to research and training 25 faculty from six different schools Shared facilities in computing, synthesis, material characterization and device fabrication Industrial resource Center for technological innovation 2

3 The Future of Consumer Packaging A convergence of emerging technologies: digital printing, flexible and printed electronics, and smart packaging. Modernize the supply chain by retaining and monitoring product quality by active sensing and monitoring of physical properties. -Time, temperature, light, humidity, UV, oxygen, pathogens, bacteria Interactive features can revolutionize the consumer/packaging interface which has remained unchanged for decades. Crime prevention and security: Brand protection Counterfeiting Fight terrorism through explosive detectors Modernizing and securing the supply chain 3

4 Smart Organic Materials Communications Optoelectronics Displays Energy conversion Organic circuits/ Sensors Solid-state lighting

5 A Paradigm Shift: Printed Electronics Mobile/Wireless Light weight Wearable Puncture resistant Konarka PolyIC Energy efficient Flexible intelligence everywhere 5

6 Printed Electronics: Market Forecast Source: IDTechEx $55 B by 2020

7 Organics vs. Inorganics Molecular properties Lattice driven properties Highly localized electronic excitations Morphology and structure difficult to define, disordered structures Tolerant to defects Highly delocalized electronic excitations Periodic lattice leads to well defined band structures Requires nearly perfect crystalline structure 7

8 Technology Areas Energy supply Displays Sensing Imaging Communication Logistics Flexible photovoltaics Flexible batteries AMOLED E-readers, electrochromic Environmental monitoring Physiological sensing IR, visible UV imaging devices Surveillance Flexible antennas RFID/memory Real time location of assets Monitoring and inspection of assets Heterogeneous integration on plastic, low cost 8

9 A System Approach Material synthesis and modeling Device physics and engineering Processing and patterning

10 Progress in Organic Semiconductors Dimitrakopoulos, Adv. Mater. 14, 99, (2002). Complementary designs with n-channel and p-channel transistors with comparable performance 10

11 Progress in Organic Photovoltaics 41.6 % Solarmer C.W. Tang, Appl. Phys. Lett, 48, 183 (1986) 1% Konarka: 8.3% (polymer) Dec HeliaTek: 8.3% (small molecules) Oct

12 Printed and Flexible Electronics at Georgia Tech 12

13 Flexible Display Technology RGB active high luminance at low voltage, processing at low temperature on flexible substrates Developed photo-patternable polymers that can be processed like a photoresist; provides easy patterning for color displays and high thermal stability. Chem. Mater. 15, 1491 (2003)

14 Printed electronics Low-temperature processing of organic semiconductors, metals and dielectrics on flexible substrates: low cost and performance superior to a:si. Macroelectronics RF identification tags Electronic paper Active matrix drivers

15 OFETs with bi-layer dielectrics ACHIEVEMENTS: A new device architecture has been developed for organic field-effect transistors that allows for unprecedented operational and environmental stability. The device uses a new bi-layer geometry for the gate dielectric layer that allows for different degradation mechanisms to be compensated. Solution-processed OFETs with field effect mobility values of 0.5 cm 2 /Vs and stability over a year were demonstrated. Al Al 2 O 3 (50 nm) CYTOP (40 nm) TIPS-pentacene + PTAA Au Au PVP Glass µ (cm 2 /Vs) Exposure time in air (Days) V Th (V) Impact: This breakthrough in demonstrating air stable OFETs with high performance, and high operational and environmental stability brings organic printed electronics one step closer to commercialization. D.K. Hwang et al., Advanced Materials, published online Jan. (2011). 15

16 µ (cm 2 /Vs) Environmental and operational Environmental stability Al 2 O 3 CYTOP CYTOP /Al 2 O Time (Days) stability I DS (A) Operational stability 0 20,000 cycles W/L = 2550 µm/180 µm V DS = - 8 V Plot every 2000 th interval V GS (V) Plot every 100 th interval At 31 days: O 2 plasma treatment for 5 min Canek Fuentes Hernandez Do Kyung Hwang Jungbae Kim 16

17 Technology Parameters Performance Charge mobility Circuit operating frequency Resolution Encapsulation Process parameters TFT channel length Registration Barrier properties Bending radius Printing parameters Integration x improvements possible Manufacturing Yield Cost 17

18 Technology Drivers Organic transistors with comparable n- channel and p-channel mobility: today 1 cm 2 /Vs, possible 10 cm 2 /Vs Amorphous metal oxide n-channel transistors: today 10 cm 2 /Vs, possible 300 cm 2 /Vs (transparent) Dielectrics with high capacitance and energy density: today 10 J/cm 3, possible 500 J/cm 3. Printing resolution: today 100 µm, possible < 1 µm. Potential for disruptive breakthroughs 18

19 Organic PV Research at COPE Materials Processing PV cell Packaging PV module Synthesis of new molecules and polymers with tailored optical and electrical properties Quantum chemical modeling of material properties and interfaces Optical and electrical characterization of thin films and discrete PV devices Physical models based on engineering level descriptors Monolithic integration of cells into modules New flexible transparent electrodes (beyond ITO) Flexible packaging technology with barrier coatings

20 Semitransparent Solar Cells: Metal-free and ITO-free OPVs 15 ZnO PH1000 CPP-PEDOT P3HT:PCBM PH1000 Glass Current Density (ma/cm 2 ) -5 Dark Light Voltage (V) Zhou Y. et.al. Applied Physics Letters 97(15), Oct. (2010) PCE AM1.5G = 1.8 % Voc = 0.55 V Jsc AM1.5G = 7.2 ma/cm 2 FF = 0.45 Jaewon Shim Seungkeun Choi Yinhua Zhou Hyeunseok Cheun 20

21 Summary Printed electronics is emerging and competes with well established electronic material platform like a:si. Potential of 10 to 100 x improvements in technology parameters can generate real disruptive technologies. Printable, light weight, rugged, flexible, and integrated electronic platforms can revolutionize the consumer/packaging interface. Printed Electronics, a strategic technology for the packaging industry. Integrated team and infrastructure in place at Georgia Tech to engage into scaled up R&D effort in Printed Electronics. 21

22 COPE Faculty Thank you for your attention

23 Glossary AMOLED: Active matrix organic light-emitting diodes N-channel transistor: a transistor that conducts electrons P-channel transistor: a transistor that conducts holes a:si: amorphous silicon OFET: organic field-effect transistor TFT: thin-film transistor ITO: indium tin oxide OPV: Organic photovoltaics 23

24 Supporting information P-channel pentacene TFT V GS = 0, -30 V, 2.5V P-type V GS =V DS N-channel InGaZnO TFT V GS = 0, 30 V, 2.5 V N-type I DS (µa) I DS (µa) V GS =V DS V DS (V) V DS (V) Mobility: 0.15 cm 2 /Vs Mobility: 3.8 cm 2 /Vs 24

25 Supporting information Al Al 2 O 3 (100 nm) TIPS-pentacene + PTAA Au Au PFBT PVP Glass Al CYTOP (780 nm) TIPS-pentacene + PTAA Au Au PVP Glass Al Al 2 O 3 (50 nm) CYTOP (40 nm) TIPS-pentacene + PTAA Au Au PVP Glass I DS (A) Al 2 O 3 (100 nm) CYTOP (780 nm) CYTOP (40 nm)/al 2 O 3 (50 nm) V DS = - 8 V V GS (V) I DS 1/2 (µa) 1/2 I DS (A) V DS = - 50 V V GS (V) I DS 1/2 (µa) 1/2 I DS (A) V DS = - 8 V V GS (V) I DS 1/2 (µa) 1/2 25

26 Supporting Information ACHIEVEMENTS: Hybrid inverters were fabricated on flexible substrates. The n-channel transistor was formed from an amorphous InGaZnO metal oxide semiconductor and yielded mobility values of 3.8 cm 2 /Vs. Since p-channel transistors are more difficult to fabricate with metal oxides, pentacene was selected for the p-channel transistor. Inverters with balanced noise margins and gain values of 150 were demonstrated. dv OUT /dv IN (V/V) V D =30V V D =25V V D =20V Bottom gate, top contact geometry V IN (V) W P =4000µm L P = L N =180µm Impact: Researchers demonstrated state-of-the-art printable hybrid inverters on flexible substrates. All processing temperature steps were lower than 180 C. W N =400µm J.B. Kim et al. Organic Electronics 11, 1074 (2010) n-channel : InGaZnO p-channel : Pentacene 26