Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package. Features
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1 Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2) Order code V DS R DS(on) max I D P W STB21NK50Z 500 V 0.27 Ω 17 A 190 W Designed for automotive applications and AEC-Q101 qualified Extremely high dv/dt capability 100% avalanche tested Gate charge minimized Very low intrinsic capacitances Very good manufacturing repeatability Applications Switching applications Description G(1) S(3) AM16160v1 This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH technology, achieved through optimization of ST's well established strip-based PowerMESH layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications. Table 1. Device summary Order code Marking Packages Packaging STB21NK50Z 21NK50Z D²PAK Tape and reel September 2014 DocID15026 Rev 2 1/15 This is information on a product in full production.
2 Contents STB21NK50Z Contents 1 Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging mechanical data Revision history /15 DocID15026 Rev 2
3 Electrical ratings 1 Electrical ratings Table 2. Absolute maximum ratings Symbol Parameter Value Unit V DS Drain-source voltage (V GS = 0) 500 V V GS Gate-source voltage ± 30 V I D Drain current (continuous) at T C = 25 C 17 A I D Drain current (continuous) at T C =100 C A (1) I DM Drain current (pulsed) 68 A P TOT Total dissipation at T C = 25 C 190 W Derating Factor 1.51 W/ C Vesd(G-S) G-S ESD (HBM C=100 pf, R=1.5 kω) 6000 V dv/dt (2) Peak diode recovery voltage slope 4.5 V/ns T stg Storage temperature -55 to 150 C T J Max operating junction temperature 150 C 1. Pulse width limited by safe operating area 2. I SD 17 A, di/dt 200 A/µs,V DD V (BR)DSS, T J T JMAX Table 3. Thermal data Symbol Parameter Value Unit R thj-case Thermal resistance junction-case max 0.66 C/W R thj-amb Thermal resistance junction-ambient max 62.5 C/W T l Maximum lead temperature for soldering purpose 300 C Table 4. Avalanche characteristics Symbol Parameter Value Unit I AR E AS Avalanche current, repetitive or not-repetitive (pulse width limited by T j max ) Single pulse avalanche energy (starting T J =25 C, I D =I AR, V DD =50 V) 17 A 850 mj DocID15026 Rev 2 3/15 15
4 Electrical characteristics STB21NK50Z 2 Electrical characteristics (T CASE = 25 C unless otherwise specified) Table 5. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS I GSS Drain-source breakdown voltage Zero gate voltage drain current (V GS = 0) Gate body leakage current (V DS = 0) I D = 1mA, V GS = V V DS = 500 V 1 µa V DS = 500 V, T C =125 C 50 µa V GS = ±20 V ±10 µa V GS(th) Gate threshold voltage V DS = V GS, I D = 100 µa V R DS(on) Static drain-source onresistance V GS = 10 V, I D = 8.5 A Ω Table 6. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS = 25 V, f=1 MHz, V GS =0-328 pf C rss Reverse transfer capacitance - 72 pf (1) Equivalent output C oss eq. capacitance V GS =0, V DS =0 to 400 V pf Q g Total gate charge V DD =400 V, I D = 17 A nc Q gs Gate-source charge V GS =10 V nc Q gd Gate-drain charge (see Figure 15) - 42 nc 1. C oss eq. is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 4/15 DocID15026 Rev 2
5 Electrical characteristics Table 7. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time V DD = 250 V, I D = 8.5 A, ns t r Rise time R G = 4.7Ω, V GS = 10 V (see Figure 16) ns t d(off) Turn-off delay time V DD = 250 V, I D = 8.5 A, ns t f Fall time R G = 4.7 Ω, V GS =10 V (see Figure 16) ns Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± 1mA, I D = V The built-in back-to-back Zener diodes have been specifically designed to enhance the ESD capability of the device. The Zener voltage is appropriate for efficient and cost-effective intervention to protect the device integrity. These integrated Zener diodes thus eliminate the need for external components. Table 9. Source drain diode Symbol Parameter Test conditions Min Typ. Max Unit I SD Source-drain current - 17 A I SDM (1) V SD (2) Source-drain current (pulsed) - 68 A Forward on voltage I SD = 17 A, V GS =0-1.6 V t rr Reverse recovery time I SD = 17 A, ns Q rr Reverse recovery charge di/dt = 100 A/µs, V R = 100 V µc I RRM Reverse recovery current (see Figure 16) - 22 A t rr Reverse recovery time I SD = 17 A, ns Q rr Reverse recovery charge di/dt = 100 A/µs, V R = 100 V, Tj=150 C µc I RRM Reverse recovery current (see Figure 16) - 25 A 1. Pulse width limited by safe operating area 2. Pulsed: pulse duration=300µs, duty cycle 1.5% DocID15026 Rev 2 5/15 15
6 Electrical characteristics STB21NK50Z 2.1 Electrical characteristics (curves) Figure 2. Safe operating area Figure 3. Thermal impedance Figure 4. Output characteristics Figure 5. Transfer characteristics Figure 6. Normalized B VDSS vs temperature Figure 7. Static drain-source on-resistance 6/15 DocID15026 Rev 2
7 Electrical characteristics Figure 8. Gate charge vs gate-source voltage Figure 9. Capacitance variations Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on-resistance vs temperature Figure 12. Source-drain diode forward characteristics Figure 13. Maximum avalanche energy vs temperature DocID15026 Rev 2 7/15 15
8 Test circuits STB21NK50Z 3 Test circuits Figure 14. Switching times test circuit for resistive load Figure 15. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 12V IG=CONST 2.7kΩ 47kΩ 100Ω 100nF D.U.T. 1kΩ VG PW 47kΩ PW 1kΩ AM01468v1 AM01469v1 Figure 16. Test circuit for inductive load switching and diode recovery times Figure 17. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=100μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM01470v1 Pw AM01471v1 Figure 18. Unclamped inductive waveform Figure 19. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 10% VDS 10% 90% VDD VDD VGS 90% AM01472v1 0 10% AM01473v1 8/15 DocID15026 Rev 2
9 Package mechanical data 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. Figure 20. D²PAK (TO-263) drawing _T DocID15026 Rev 2 9/15 15
10 Package mechanical data STB21NK50Z Table 10. D²PAK (TO-263) mechanical data Dim. mm Min. Typ. Max. A A b b c c D D E E e 2.54 e H J L L L R 0.4 V /15 DocID15026 Rev 2
11 Package mechanical data Figure 21. D²PAK footprint (a) Footprint a. All dimension are in millimeters DocID15026 Rev 2 11/15 15
12 Packaging mechanical data STB21NK50Z 5 Packaging mechanical data Figure 22. Tape 10 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B1 K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P1 D1 User direction of feed R User direction of feed Bending radius AM08852v1 12/15 DocID15026 Rev 2
13 Packaging mechanical data REEL DIMENSIONS Figure 23. Reel 40mm min. T Access hole At slot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM08851v2 Table 11. D²PAK (TO-263) tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B 1.5 D C D D 20.2 E G F N 100 K T 30.4 P P Base qty 1000 P Bulk qty 1000 R 50 T W DocID15026 Rev 2 13/15 15
14 Revision history STB21NK50Z 6 Revision history Table 12. Document revision history Date Revision Changes 16-Sep First issue 19-Sep Updated: title and features in cover page Updated: Section 4: Package mechanical data and Section 5: Packaging mechanical data Minor text changes 14/15 DocID15026 Rev 2
15 IMPORTANT NOTICE PLEASE READ CAREFULLY STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, enhancements, modifications, and improvements to ST products and/or to this document at any time without notice. Purchasers should obtain the latest relevant information on ST products before placing orders. ST products are sold pursuant to ST s terms and conditions of sale in place at the time of order acknowledgement. Purchasers are solely responsible for the choice, selection, and use of ST products and ST assumes no liability for application assistance or the design of Purchasers products. No license, express or implied, to any intellectual property right is granted by ST herein. Resale of ST products with provisions different from the information set forth herein shall void any warranty granted by ST for such product. ST and the ST logo are trademarks of ST. All other product or service names are the property of their respective owners. Information in this document supersedes and replaces information previously supplied in any prior versions of this document STMicroelectronics All rights reserved DocID15026 Rev 2 15/15 15
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STL7N6M N-channel 6 V,.9 Ω typ., 5 A MDmesh M Power MOSFET in a PowerFLAT 5x5 package Datasheet - production data Features Order code V DS @ Tjmax R DS(on) max 7 6 5 STL7N6M 65 V.5 Ω 5 A Extremely low
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Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP
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STB18N60M2, STI18N60M2 STP18N60M2, STW18N60M2 Datasheet N-channel 600 V, 0.255 Ω typ., 13 A MDmesh M2 Power MOSFETs in D 2 PAK, I 2 PAK, TO-220 and TO-247 packages TAB TAB Features Order codes V DS @ T
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N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
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N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD10LN80K5 800 V 0.63 Ω 8 A Figure 1: Internal schematic
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STF12N120K5, STFW12N120K5 N-channel 1200 V, 0.62 Ω typ., 12 A MDmesh K5 Power MOSFETs in TO-220FP and TO-3PF packages Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT TO-220FP
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N-channel 60 V, 4.6 mω typ., 46 A STripFET F7 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STF100N6F7 60 V 5.6 mω 46 A 25 W Figure 1.
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N-channel 800 V, 0.59 Ω typ., 6 A MDmesh K5 Power MOSFET in a PowerFLAT 5x6 VHV package Datasheet - production data Features Order code V DS R DS(on) max. I D STL10LN80K5 800 V 0.66 Ω 6 A 1 2 3 4 PowerFLAT
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N-channel 600 V, 0.320 Ω typ., 10 A MDmesh II Power MOSFET in a PowerFLAT 8x8 HV package Features Datasheet - production data Figure 1. Internal schematic diagram Order code V DS @ T jmax R DS(on) max.
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N-channel 1500 V, 1.6 Ω typ.,7 A MDmesh K5 Power MOSFET in a TO-247 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT STW12N150K5 1500 V 1.9 Ω 7 A 250 W 1 3 2 Industry
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STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh II Power MOSFETs in D 2 PAK and DPAK packages Features Datasheet - production data Order codes V DS @ T jmax R DS(on) max.
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Automotive-grade N-channel 24 V, 0.95 mω typ., 180 A STripFET III Power MOSFET in a H 2 PAK-6 package Features Datasheet production data TAB Order code V DSS R DS(on) max. I D (1) STH300NH02L-6 24 V
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N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF7LN80K5 800 V 1.15 Ω 5 A 3 1 2 TO-220FP Figure 1:
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Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
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STH12N120K5-2, STP12N120K5, N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V DS R DS(on) max.
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N-channel 600 V, 0.150 Ω typ., 20 A MDmesh M2 EP Power MOSFET in TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max I D 600 V 0.163 Ω 20 A TO-220FP Figure 1: Internal schematic
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N-channel 100 V, 0.007 Ω typ., 70 A STripFET F7 Power MOSFET in a PowerFLAT 5x6 package Datasheet - production data Features Order code V DS R DS(on) max. I D P TOT 100 V 0.008 Ω 70 A 100 W 1 2 3 4 PowerFLAT
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N-channel 120 V, 0.013 Ω typ., 80 A, STripFET II Power MOSFET in a TO-220 package Features Datasheet - production data TAB Type V DSS R DS(on) max STP80NF12 120 V < 0.018 Ω 80 A I D TO-220 1 2 3 Exceptional
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Automotive-grade N-channel 40 V, 1.4 mω typ., 180 A STripFET F3 Power MOSFET in a H²PAK-2 package Datasheet - production data Features Order code V DS R DS(on) max. I D STH270N4F3-2 40 V 1.7 mω 190 A Designed
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Datasheet Automotivegrade Nchannel 65 V,.58 Ω typ., 48 A, MDmesh DM2 Power MOSFET in a TO247 package Features Order code V DS R DS(on) max. I D P TOT STW58N65DM2AG 65 V.65 Ω 48 A 36 W TO247 D(2) 1 3 2
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N-channel 800 V, 0.55 Ω typ., 8 A MDmesh K5 Power MOSFET in a TO-220FP package Datasheet - production data Features Order code V DS R DS(on) max. I D STF10LN80K5 800 V 0.63 Ω 8 A TO-220FP Figure 1: Internal
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STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
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STD10NM60N, STF10NM60N, STP10NM60N, STU10NM60N N-channel 600 V, 0.53 Ω typ., 10 A MDmesh II Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Features Datasheet - production data Order code V DS
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STB18N60M2, STP18N60M2, STW18N60M2 N-channel 600 V, 0.255 Ω typ., 13 A MDmesh II Plus low Q g Power MOSFET in D 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB Features 2 3 1 D PAK Order
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Datasheet Automotive N-channel 40 V, 2.0 mω max., 100 A STripFET F7 Power MOSFET in a LFPAK 5x6 package Features TAB G(4) LFPAK 5x6 D(TAB) S(1, 2, 3) 1 Product status link Product summary 2 4 3 G4S123DTAB_LFPAK
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STB24N60DM2, STP24N60DM2, STW24N60DM2 N-channel 600 V, 0.175 Ω typ., 18 A FDmesh II Plus low Q g Power MOSFETs in D 2 PAK, TO-220 and TO-247 packages Datasheet production data TAB TAB Features D 2 PAK
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STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
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N-channel 650 V, 0.073 Ω typ., 30 A MDmesh M5 Power MOSFET in a TO247-4 package Datasheet - preliminary data Features Order code V DS @ T Jmax R DS(on) max I D STW38N65M5-4 710 V 0.095 Ω 30 A Extremely
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