GS61004B 100V enhancement mode GaN transistor Preliminary Datasheet

Transcription

1 Features 100V enhancement mode power switch Ultra low FOM Island Technology die Low inductance GaNPX package Reverse current capability Zero reverse recovery loss RoHS 6 compliant Applications 48V DC-DC conversion AC-DC (secondary side synch. rectification) VHF very small form-factor adapter Appliances and power tools 48V Motor Drive Absolute Maximum Ratings (T case = 25 C except as noted) Parameters Symbol Value Unit Operating Junction Temperature T J -55 to +150 C Storage Temperature Range T S -55 to +150 C Drain-to-Source Voltage V DS 100 V Gate-to-Source Voltage V GS -10, + 7 V Gate-to-Source Voltage (transient) V GS ±10 V Continuous Drain Current (T case=25 C) (Note 1) I DS(cont)25 45 Continuous Drain Current (T case=100 C) I DS(cont) A Pulsed Drain Current (T case=25 C) I DS(pulse)25 70 (1) Limited by saturation Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction to case) R ΘJC 1.1 Thermal Resistance (junction to ambient) (Note 2) R ΘJA 55 C /W Maximum Soldering Temperature (MSL3 rated) T SOLD 260 C (2) Device mounted on 40mm x 40mm x 1.5mm single layer epoxy PCB FR4 with 6cm 2 copper area (thickness 70μm) for thermal pad connection. PCB is vertical without air stream cooling. DS61004B Rev GaN Systems Inc. 1

2 Electrical Characteristics (Typical values at T CASE= 25 C unless otherwise noted) Parameters Symbol Value Units Conditions (Note 3) Drain-to-Source Breakdown Voltage BV DSS 100 V Drain-to-Source On Resistance (T J = 25 C) R DS(on) 15 mω Drain-to-Source On Resistance (T J = 150 C) 37 mω Gate Threshold Voltage V GS(th) 1.6 V Drain to Source Leakage Current (T J = 25 C) I DSS 0.3 µa Drain to Source Leakage Current (T J = 150 C) 50 µa V GS = 0V I D = 1mA V GS = 6V, T J = 25 C I D = 12A V GS = 6V, T J = 150 C I D =12A V DS = V GS I D = 1mA V DS = 100V V GS = 0V, T J = 25 C V DS = 100V V GS = 0V, T J = 150 C Gate to Source Current I GS 100 µa V GS=6V, V DS=0V Gate Resistance R G 1.5 Ω f=1mhz, open drain Input Capacitance C ISS 328 Output Capacitance C OSS 133 pf Reverse Transfer Capacitance C RSS 5 Effective Output Capacitance, Energy Related (Note 4) C O(ER) 157 pf Effective Output Capacitance, Time Related (Note 5) C O(TR) 180 pf Total Gate Charge Q G(TOT) 6.6 nc Gate-to-Source Charge Q GS 1.4 nc Gate-to -Drain Charge Q GD 1.0 nc Reverse Recovery Charge Q RR 0 nc V DS = 80V V GS = 0V f = 1MHz V GS =0V V DS=0 to 80V I D =constant V GS =0V V DS=0 to 80V V GS=0 to 6V V DS=50V I D=12A Output Charge Q OSS 11.5 nc Gate plateau voltage V plat 3 V V DS = 80V Source-Drain Reverse Voltage V SD 0.18 V V GS = 6V, T J = 25 C I SD =12A Source-Drain Reverse Voltage V SD 2.0 V V GS = 0V, T J = 25 C I SD =12A (3) All parameters are specified with the substrate and thermal pad connected to the source (4) CO(ER) is the fixed capacitance that would give the same stored energy as COSS while VDS is rising from 0V to the stated VDS (5) CO(TR) is the fixed capacitance that would give the same charging time as COSS while VDS is rising from 0V to the stated VDS DS61004B Rev GaN Systems Inc. 2

3 Figure 1: GS61004B typical IDS vs. TJ = 25 ⁰C Figure 2. GS61004B typical IDS vs. TJ = 150 C Figure 3: GS61004B typical RDS(on) vs. ID for VGS = 6 C Figure 4: GS61004B typical RDS(on) vs. ID for VGS = 6 C DS61004B Rev GaN Systems Inc. 3

4 Figure 5 : GS61004B typical gate charge, QG, vs. VDS = 50V Figure 6 : GS61004B typical input, output and reverse capacitance vs. VDS Figure 7: GS61004B typical COSS stored energy, EOSS, vs. VDS Figure 8 : GS61004B typical transfer characteristic ID vs. VGS DS61004B Rev GaN Systems Inc. 4

5 Figure 9 : GS61004B reverse conduction characteristic ISD vs. VSD (VGS = 6, 0 and -2V) Figure 10: GS61004B Safe Operating Tcase 25 ⁰C Figure 11: GS61004B temperature derating Figure 12 GS61004B Transient Thermal Impedance DS61004B Rev GaN Systems Inc. 5

6 Package Dimensions GS61004B Recommended Minimum Footprint GS61004B North America Europe Asia Important Notice Unless expressly approved in writing by an authorized representative of GaN Systems, GaN Systems components are not designed, authorized or warranted for use in lifesaving, life sustaining, military, aircraft, or space applications, nor in products or systems where failure or malfunction may result in personal injury, death, or property or environmental damage. The information given in this document shall not in any event be regarded as a guarantee of performance. GaN Systems hereby disclaims any or all warranties and liabilities of any kind, including but not limited to warranties of non-infringement of intellectual property rights. All other brand and product names are trademarks or registered trademarks of their respective owners. Information provided herein is intended as a guide only and is subject to change without notice. The information contained herein or any use of such information does not grant, explicitly, or implicitly, to any party any patent rights, licenses, or any other intellectual property rights. GaN Systems standard terms and conditions apply GaN Systems Inc. All rights reserved. DS61004B Rev GaN Systems Inc. 6

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