BRD8009/D Rev. 1, Apr Transient Voltage Suppression Devices

Transcription

1 BRD8009/D Rev., Apr-200 Transient Voltage Suppression Devices

2 ON Semiconductor Transient Voltage Suppression Devices BRD8009/D Rev., Apr200 SCILLC, 200 Previous Edition 999 All Rights Reserved

3 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. PUBLICATION ORDERING INFORMATION NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 63, Denver, Colorado 8027 USA Phone: or Toll Free USA/Canada Fax: or Toll Free USA/Canada ONlit@hibbertco.com Fax Response Line: or Toll Free USA/Canada N. American Technical Support: Toll Free USA/Canada EUROPE: LDC for ON Semiconductor European Support German Phone: (+) (MonFri 2:30pm to 7:00pm CET) ONlitgerman@hibbertco.com French Phone: (+) (MonFri 2:00pm to 7:00pm CET) ONlitfrench@hibbertco.com English Phone: (+) (MonFri 2:00pm to :00pm GMT) ONlit@hibbertco.com EUROPEAN TOLLFREE ACCESS*: *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: (MonFri 8:00am to :00pm MST) ONlitspanish@hibbertco.com TollFree from Mexico: Dial for Access then Dial ASIA/PACIFIC: LDC for ON Semiconductor Asia Support Phone: (TueFri 9:00am to :00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: ONlitasia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 432 NishiGotanda, Shinagawaku, Tokyo, Japan 4003 Phone: r42@onsemi.com ON Semiconductor Website: For additional information, please contact your local Sales Representative. 2

4 Table of Contents Summary of Axial Leaded TVS Summary of Surface Mounted TVS TVS Definition of Voltage Terms Custom TVS Designs Data Sheets SA.0A Series SA.0CA Series P6KE6.8A Series P6KE6.8CA Series N6267A Series KE6.8CA Series MMBZV6ALT Series MMBZVDLT, MMBZ27VCLT MMQAV6T Series SMA.0AT3 Series SMA0CAT3 Series SMB.0AT3 Series SMB0CAT3 Series P6SMB6.8AT3 Series P6SMBCAT3 Series SMC6.8AT3 Series SMC.0AT3 Series MSQA6VWT PMT.0AT3 Series SMS0T NZMM7V0T NZF220TT NZF220DFT MMT0A230T MMT0B230T MMT0B230T Case Outlines Sales Offices Document Definitions

5 Summary of Axial Leaded TVS Power (Watts) Working Peak Reverse Voltage Package and Description Part Number Series Page 00 V70 V MiniMosorb (Unidirectional) SA.0A 7 00 V70 V MiniMosorb (Bidirectional) SA.0CA V7 V Surmetic 40 (Unidirectional) P6KE6.8A V7 V Surmetic 40 (Bidirectional) P6KE6.8CA V24 V Mosorb (Unidirectional).KE6.8A V7 V Mosorb (Unidirectional) N6267A V24 V Mosorb (Bidirectional).KE6.8CA 34 Summary of Surface Mounted TVS Power (Watts) Working Peak Reverse Voltage Package and Description Part Number Series Page 24.6 V33 V * SOT23, Dual Diode, Common Anode MMBZV V, 7 V * SOT23, Dual Diode, Common Cathode MMBZVD V * SC88A/SOT33, C = 90 pf, Quad Diode MSQA6V V33 V SC9, C = 280 pf, Quad Diode MMQA 400 V78 V SMA SMA.0A V78 V SMA (Bidirectional) SMA0CA V70 V SMB SMB.0A V78 V SMB (Bidirectional) SMB0CA V7 V SMB P6SMB6.8A V77.8 V SMB (Bidirectional) P6SMBCA V77.8 V SMC.SMC6.8A V78 V SMC SMC.0A 87 *Nominal Breakdown Voltage 4

6 TVS Definition of Voltage Terms

7 Custom TVS Designs For large volume specials, ON Semiconductors has design capability covering a wide range of voltage, capacitance, package, power surge, and transient surge. Surge Specs IEC42 Contact Discharge MIL STD 883 Method 306 (Human Body Model) 0 µs/000 µs Pulse 8 µs/20 µs Pulse Capacitance Specs Capacitance 280 pf 90 pf pf Application Low Speed (RS 232) Medium Speed High Speed (USB, Fire Wire) Voltage Specs 6 Volts200 Volts Discrete Packages from ON Semiconductor for TVS SOD323 SOD23 SOT23 Micro8 TSOP6 SC9 SC70 SC88/SOT363 ( or 6 Leads) SOT223 Powermite SMA SMB SMC Axial Leaded Packages Case 9 Case 7 Case 4A 6

8 Unidirectional* The SA.0A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA.0A series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range to 70 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa above 8. V UL 497B for Isolated Loop Circuit Protection Maximum Temperature Coefficient Specified Response Time is typically < ns Mechanical Characteristics: CASE: Void-free, Transfer-molded, Thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING: 230C, /6 from the case for 0 seconds POLARITY: Cathode indicated by polarity band. MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation T L 2 C Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C P PK 00 Watts P D Watts mw/ C Thermal Resistance, JunctiontoLead R JL 33.3 C/W Forward Surge Current (Note T A = 2 C Operating and Storage Temperature Range I FSM 70 Amps T J, T stg to +7. Nonrepetitive current pulse per Figure 4 and derated above T A = 2 C per Figure /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute *Please see SA.0CA SA70CA for Bidirectional devices. C Cathode AXIAL LEAD CASE 9 PLASTIC L SA xxxa YYWW L = Assembly Location SAxxxA = ON Device Code YY = Year WW = Work Week Anode ORDERING INFORMATION Device Package Shipping SAxxxA Axial Lead 000 Units/Box SAxxxARL Axial Lead 000/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 7 Publication Order Number: SA.0A/D

9 SA.0A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 6.) = 3 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current V BR I F V F Maximum Temperature Variation of V BR Forward Current Forward I F I PP UniDirectional TVS 8

10 SA.0A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 6.) = 3 A) Device Breakdown Voltage V I PP (Note.) V RWM (Note 3.) I V RWM V BR (Note 4.) I T V C I PP V Device BR Marking Volts µa Min Nom Max ma Volts A mv/ C SA.0A SA.0A SA6.0A SA6.0A SA7.0A SA7.0A SA7.A SA7.A SA8.0A SA8.0A SA8.A SA8.A SA9.0A SA9.0A SA0A SA0A SAA SAA SA2A SA2A SA3A SA3A SA4A SA4A SAA SAA SA6A SA6A SA7A SA7A SA8A SA8A SA20A SA20A SA22A SA22A SA24A SA24A SA26A SA26A SA28A SA28A SA30A SA30A SA33A SA33A SA36A SA36A SA40A SA40A SA43A SA43A SA4A SA4A SA48A SA48A SAA SAA SA8A SA8A SA60A SA60A SA64A SA64A SA70A SA70A SA78A SA78A SA90A SA90A SA00A SA00A SA0A SA0A SA20A SA20A SA30A SA30A SA0A SA0A SA60A SA60A SA70A SA70A NOTES: 3. MiniMOSORB transients suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 4. V BR measured at pulse test current I T at an ambient temperature of 2 C.. Surge current waveform per Figure 4 and derate per Figures and /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute 9

11 SA.0A Series P K, PEAK POWER (kw) 00 0 NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE µs µs 0 µs 00 µs ms 0ms t p, PULSE WIDTH Figure. Pulse Rating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR TA = 2 C T A, AMBIENT TEMPERATURE (C) Figure 2. Pulse Derating Curve 0,000 C, CAPACITANCE (pf) ZERO BIAS VALUE (%) 00 (V RWM ) t P 0 t r 0 µs PEAK VALUE I PP HALF VALUE I PP 2 PULSE WIDTH (t p ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 0% OF I PP V BR, BREAKDOWN VOLTAGE (VOLTS) Figure 3. Capacitance versus Breakdown Voltage t, TIME (ms) Figure 4. Pulse Waveform P D, STEADY STATE POWER DISSIPATION (WATTS) 4 3/8 3 3/ T L, LEAD TEMPERATURE (C) Figure. Steady State Power Derating 0

12 SA.0A Series UL RECOGNITION* The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *Applies to SA.0A, CA SA70A, CA.

13 Bidirectional* The SA.0CA series is designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SA.0CA series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.0 to 70 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa above 8. V UL 497B for Isolated Loop Circuit Protection Maximum Temperature Coefficient Specified Response Time is typically < ns Mechanical Characteristics: CASE: Void-free, Transfer-molded, Thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230C, /6 from the case for 0 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation T L 2 C Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C Thermal Resistance, JunctiontoLead Operating and Storage Temperature Range P PK 00 Watts P D Watts mw/ C R JL 33.3 C/W T J, T stg to +7 C. Nonrepetitive current pulse per Figure 3 and derated above T A = 2C per Figure 2. *Please see SA.0A to SA70A for Unidirectional devices. AXIAL LEAD CASE 9 PLASTIC L SA xxxca YYWW L = Assembly Location SAxxxCA = ON Device Code YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping SAxxxCA Axial Lead 000 Units/Box SAxxxCARL Axial Lead 000/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 2 Publication Order Number: SA.0CA/D

14 SA.0CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R VRWM V VC IT BR V BR I T V BR Breakdown I T Test Current Maximum Temperature Variation of V BR I PP BiDirectional TVS ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted.) Device Breakdown Voltage V I PP (Note 4.) V RWM (Note 2.) I V RWM V BR (Note 3.) I T V C I PP V Device BR Marking (Volts) (µa) Min Nom Max (ma) (Volts) (A) (mv/ C) SA.0CA SA.0CA SA6.0CA SA6.0CA SA6.CA SA6.CA SA7.0CA SA7.0CA SA7.CA SA7.CA SA8.0CA SA8.0CA SA8.CA SA8.CA SA9.0CA SA9.0CA SA0CA SA0CA SACA SACA SA2CA SA2CA SA3CA SA3CA SA4CA SA4CA SACA SACA SA6CA SA6CA SA7CA SA7CA SA8CA SA8CA SA20CA SA20CA SA22CA SA22CA SA24CA SA24CA SA26CA SA26CA SA28CA SA28CA SA30CA SA30CA SA33CA SA33CA SA36CA SA36CA SA40CA SA40CA SA43CA SA43CA SA4CA SA4CA SA48CA SA48CA SACA SACA SA8CA SA8CA SA60CA SA60CA NOTES: 2. MiniMOSORB transient suppressors are normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. V BR measured at pulse test current I T at an ambient temperature of 2 C. 4. Surge current waveform per Figure 3 and derate per Figures and 2. 3

15 SA.0CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted.) Device Device Marking V RWM (Note 2.) (Volts) I V RWM (µa) Min Breakdown Voltage V BR (Note 3.) (Volts) Nom I T (ma) V I PP (Note 4.) V C (Volts) SA64CA SA64CA SA70CA SA70CA SA78CA SA78CA SA8CA SA8CA I PP (A) V BR (mv/ C) SA90CA SA90CA SA00CA SA00CA SA0CA SA0CA SA20CA SA20CA SA30CA SA30CA SA0CA SA0CA SA60CA SA60CA SA70CA SA70CA NOTES: 2. MiniMOSORB transient suppressors are normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. V BR measured at pulse test current I T at an ambient temperature of 2 C. 4. Surge current waveform per Figure 3 and derate per Figures and 2. P P K, PEAK POWER (kw) VALUE (%) ms ms 0 ms 00 ms ms 0ms 00 0 µ t p, PULSE WIDTH Figure. Pulse Rating Curve t, TIME (ms) Figure 3. Pulse Waveform PEAK PULSE DERATING IN % OF PEAK POWER OR TA = 2 C P D, STEADY STATE POWER DISSIPATION (WATTS) T A, AMBIENT TEMPERATURE (C) Figure 2. Pulse Derating Curve T L, LEAD TEMPERATURE (C) Figure 4. Steady State Power Derating 4

16 SA.0CA Series UL RECOGNITION* The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *Applies to SA.0A, CA SA70A, CA.

17 Unidirectional* The P6KE6.8A series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.8 to 7 V Peak Power 600 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa above 0 V Maximum Temperature Coefficient Specified UL 497B for Isolated Loop Circuit Protection Response Time is typically < ns Mechanical Characteristics: CASE: Void-free, Transfer-molded, Thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING: 230C, /6 from the case for 0 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any Cathode AXIAL LEAD CASE 7 STYLE L P6KE xxxa YYWW L = Assembly Location P6KExxxA = ON Device Code YY = Year WW = Work Week Anode MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation T L 2 C Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C P PK 600 Watts P D.0 0 Watts mw/ C ORDERING INFORMATION Device Package Shipping P6KExxxA Axial Lead 000 Units/Box P6KExxxARL Axial Lead 4000/Tape & Reel Thermal Resistance, JunctiontoLead R JL C/W Forward Surge Current (Note T A = 2 C I FSM 00 Amps Operating and Storage Temperature Range T J, T stg to +0. Nonrepetitive current pulse per Figure 4 and derated above T A = 2 C per Figure /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. *Please see P6KE6.8CA P6KE200CA for Bidirectional devices. C Semiconductor Components Industries, LLC, 200 March, 200 Rev. 4 6 Publication Order Number: P6KE6.8A/D

18 P6KE6.8A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 6.) = 0 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current V BR I F V F Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS 7

19 P6KE6.8A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 6.) = 0 A) Device Breakdown Voltage V I PP (Note.) V RWM (Note 3.) I V RWM V BR (Note 4.) I T V C I PP V Device BR Marking Volts µa Min Nom Max ma Volts A %/ C P6KE6.8A P6KE6.8A P6KE7.A P6KE7.A P6KE8.2A P6KE8.2A P6KE9.A P6KE9.A P6KE0A P6KE0A P6KEA P6KEA P6KE2A P6KE2A P6KE3A P6KE3A P6KEA P6KEA P6KE6A P6KE6A P6KE8A P6KE8A P6KE20A P6KE20A P6KE22A P6KE22A P6KE24A P6KE24A P6KE27A P6KE27A P6KE30A P6KE30A P6KE33A P6KE33A P6KE36A P6KE36A P6KE39A P6KE39A P6KE43A P6KE43A P6KE47A P6KE47A P6KEA P6KEA P6KE6A P6KE6A P6KE62A P6KE62A P6KE68A P6KE68A P6KE7A P6KE7A P6KE82A P6KE82A P6KE9A P6KE9A P6KE00A P6KE00A P6KE0A P6KE0A P6KE20A P6KE20A P6KE30A P6KE30A P6KE0A P6KE0A P6KE60A P6KE60A P6KE70A P6KE70A P6KE80A P6KE80A P6KE200A P6KE200A A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 4. V BR measured at pulse test current I T at an ambient temperature of 2 C. Surge current waveform per Figure 4 and derate per Figures and /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 8

20 P6KE6.8A Series P P K, PEAK POWER (kw) µs µs 0 µs 00 µs ms 0 ms t P, PULSE WIDTH NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 PEAK PULSE DERATING IN % OF PEAK POWER OR TA = 2 C T A, AMBIENT TEMPERATURE (C) Figure. Pulse Rating Curve Figure 2. Pulse Derating Curve 0,000 C, CAPACITANCE (pf) V RWM ZERO BIAS VALUE (%) 00 0 t r 0 µs t P PEAK VALUE I PP HALF VALUE PULSE WIDTH (t p ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 0% OF I PP. I PP V BR, BREAKDOWN VOLTAGE (VOLTS) Figure 3. Capacitance versus Breakdown Voltage t, TIME (ms) Figure 4. Pulse Waveform P D, STEADY STATE POWER DISSIPATION (WATTS) /8 3/ T L, LEAD TEMPERATURE C) Figure. Steady State Power Derating DERATING FACTOR PULSE WIDTH 0 ms ms 00 µs 0 µs D, DUTY CYCLE (%) Figure 6. Typical Derating Factor for Duty Cycle 9

21 P6KE6.8A Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 7. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 8. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The P6KE6.8A series has very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT Z in V in LOAD V L V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. 20

22 P6KE6.8A Series UL RECOGNITION* The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *Applies to P6KE6.8A, CA P6KE200A, CA. 2

23 Bidirectional* The P6KE6.8CA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and is ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.8 to 7 V Peak Power 600 ms ESD Rating of class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa above 0 V Maximum Temperature Coefficient Specified UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, Transfer-molded, Thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: C, /6 from the case for 0 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any MAXIMUM RATINGS AXIAL LEAD CASE 7 PLASTIC L P6KE xxxca YYWW L = Assembly Location P6KExxxCA = ON Device Code YY = Year WW = Work Week Rating Symbol Value Unit Peak Power Dissipation T L 2 C Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C Thermal Resistance, JunctiontoLead Operating and Storage Temperature Range P PK 600 Watts P D Watts 0 mw/ C R JL C/W T J, T stg to +0 C ORDERING INFORMATION Device Package Shipping P6KExxxCA Axial Lead 000 Units/Box P6KExxxCARL Axial Lead 4000/Tape & Reel. Nonrepetitive current pulse per Figure 3 and derated above T A = 2 C per Figure 2. *Please see P6KE6.8A P6KE200A for Unidirectional devices. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 22 Publication Order Number: P6KE6.8CA/D

24 P6KE6.8CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R VRWM V VC IT BR V BR I T V BR Breakdown I T Test Current Maximum Temperature Variation of V BR I PP BiDirectional TVS 23

25 P6KE6.8CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted.) Device Breakdown Voltage V I PP (Note 4.) V RWM (Note 2.) I V RWM V BR (Note 3.) I T V C I PP V Device BR Marking (Volts) (µa) Min Nom Max (ma) (Volts) (A) (%/ C) P6KE6.8CA P6KE6.8CA P6KE7.CA P6KE7.CA P6KE8.2CA P6KE8.2CA P6KE9.CA P6KE9.CA P6KE0CA P6KE0CA P6KECA P6KECA P6KE2CA P6KE2CA P6KE3CA P6KE3CA P6KECA P6KECA P6KE6CA P6KE6CA P6KE8CA P6KE8CA P6KE20CA P6KE20CA P6KE22CA P6KE22CA P6KE24CA P6KE24CA P6KE27CA P6KE27CA P6KE30CA P6KE30CA P6KE33CA P6KE33CA P6KE36CA P6KE36CA P6KE39CA P6KE39CA P6KE43CA P6KE43CA P6KE47CA P6KE47CA P6KECA P6KECA P6KE6CA P6KE6CA P6KE62CA P6KE62CA P6KE68CA P6KE68CA P6KE7CA P6KE7CA P6KE82CA P6KE82CA P6KE9CA P6KE9CA P6KE00CA P6KE00CA P6KE0CA P6KE0CA P6KE20CA P6KE20CA P6KE30CA P6KE30CA P6KE0CA P6KE0CA P6KE60CA P6KE60CA P6KE70CA P6KE70CA P6KE80CA P6KE80CA P6KE200CA P6KE200CA A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. V BR measured at pulse test current I T at an ambient temperature of 2 C. 4. Surge current waveform per Figure 3 and derate per Figures and 2. 24

26 P6KE6.8CA Series P P K, PEAK POWER (kw) s s 0 s 00 s s 0 s t P, PULSE WIDTH NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 3 PEAK PULSE DERATING IN % OF PEAK POWER OR TA= 2 C T A, AMBIENT TEMPERATURE (C) Figure. Pulse Rating Curve Figure 2. Pulse Derating Curve VALUE (%) 00 0 t r 0 s PEAK VALUE I PP HALF VALUE PULSE WIDTH (t p ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 0% OF I PP. I PP t, TIME (ms) Figure 3. Pulse Waveform P D, STEADY STATE POWER DISSIPATION (WATTS) /8, 3/8, T L, LEAD TEMPERATURE (C) Figure 4. Steady State Power Derating DERATING FACTOR PULSE WIDTH 0 ms ms 00 s 0 s D, DUTY CYCLE (%) Figure. Typical Derating Factor for Duty Cycle 2

27 P6KE6.8CA Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 6. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 7. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The P6KE6.8A series has very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT Z in V in LOAD V L V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 6. Figure 7. 26

28 P6KE6.8CA Series UL RECOGNITION* The entire series including the bidirectional CA suffix has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #E 60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their protector category. *Applies to P6KE6.8A, CA P6KE200A, CA. 27

29 Unidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Specification Features: Working Peak Reverse Voltage Range.8 V to 24 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230 C, /6 from the case for 0 seconds POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation T L 2 C P PK 00 Watts Cathode AXIAL LEAD CASE 4A PLASTIC L N6 xxxa.ke xxxa YYWW Anode L = Assembly Location N6xxxA = JEDEC Device Code.KExxxA = ON Device Code YY = Year WW = Work Week ORDERING INFORMATION Device Package Shipping.KExxxA Axial Lead 00 Units/Box.KExxxARL4 Axial Lead 00/Tape & Reel Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C P D.0 20 Watts mw/ C N6xxxA Axial Lead 00 Units/Box N6xxxARL4 Axial Lead 00/Tape & Reel Thermal Resistance, JunctiontoLead R JL 20 C/W Forward Surge Current (Note T A = 2 C Operating and Storage Temperature Range I FSM 200 Amps T J, T stg 6 to +7. Nonrepetitive current pulse per Figure and derated above T A = 2 C per Figure /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. C Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. *Please see.ke6.8ca to.ke20ca for Bidirectional Devices Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: N6267A/D

30 N6267A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V Max., I F (Note 3.) = 00 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current V BR I F V F Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS 29

31 N6267A Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 3.) = 00 A) Device Breakdown Voltage V I PP (Note 7.) V RWM JEDEC (Note.) I V RWM V BR (Note 6.) I T V C I PP V Device BR (Note 4.) (Volts) (µa) Min Nom Max (ma) (Volts) (A) (%/ C).KE6.8A N6267A KE7.A N6268A KE8.2A N6269A KE9.A N6270A KE0A N627A KEA N6272A KE2A N6273A KE3A N6274A KEA N627A KE6A N6276A KE8A N6277A KE20A N6278A KE22A N6279A KE24A N6280A KE27A N628A KE30A N6282A KE33A N6283A KE36A N6284A KE39A N628A KE43A N6286A KE47A N6287A KEA N6288A KE6A N KE62A N6290A KE68A N629A KE7A N6292A KE82A N6293A KE9A N6294A KE00A N629A KE0A N6296A KE20A N6297A KE30A N6298A KE0A N6299A KE60A N6300A KE70A N630A KE80A N6302A KE200A N6303A KE220A KE20A /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. 4. Indicates JEDEC registered data. A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 6. V BR measured at pulse test current I T at an ambient temperature of 2 C 7. Surge current waveform per Figure and derate per Figures and 2. 30

32 N6267A Series µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Derating Curve N6373, ICTE-, MPTE-, through N6389, ICTE-4, C, MPTE-4, C N6267A/.KE6.8A through N6303A/.KE200A Figure 3. Capacitance versus Breakdown Voltage µ Figure 4. Steady State Power Derating Figure. Pulse Waveform 3

33 N6267A Series µ N6373, ICTE-, MPTE-, through N6389, ICTE-4, C, MPTE-4, C µ.ke6.8ca through.ke200ca Figure 6. Dynamic Impedance µ µ Figure 7. Typical Derating Factor for Duty Cycle APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 8. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 9. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or 32

34 N6267A Series ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. TYPICAL PROTECTION CIRCUIT OVERSHOOT DUE TO INDUCTIVE EFFECTS Figure 8. Figure 9. The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance. Clipper-bidirectional devices are available in the.kexxa series and are designated with a CA suffix; for example,.ke8ca. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for V F which does not apply). UL RECOGNITION* CLIPPER BIDIRECTIONAL DEVICES Conditioning, Temperature test, Dielectric Voltage- Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. *Applies to.ke6.8a, CA thru.ke20a, CA 3. The N6267A through N6303A series are JEDEC registered devices and the registration does not include a CA suffix. To order clipper-bidirectional devices one must add CA to the.ke device title. 33

35 Bidirectional* Mosorb devices are designed to protect voltage sensitive components from high voltage, highenergy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. These devices are ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic axial leaded package and are ideally-suited for use in communication systems, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/ consumer applications, to protect CMOS, MOS and Bipolar integrated circuits. Specification Features: Working Peak Reverse Voltage Range.8 V to 24 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 230 C, /6 from the case for 0 seconds POLARITY: Cathode band does not imply polarity MOUNTING POSITION: Any MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation T L 2 C Steady State Power T L 7 C, Lead Length = 3/8 Derated above T L = 7 C P PK 00 Watts P D.0 20 Watts mw/ C Thermal Resistance, JunctiontoLead R JL 20 C/W Operating and Storage Temperature Range T J, T stg 6 to +7. Nonrepetitive current pulse per Figure 4 and derated above T A = 2 C per Figure 2. *Please see N6267A to N6306A (.KE6.8A.KE20A) for Unidirectional Devices C ORDERING INFORMATION Device Packaging Shipping.KExxCA Axial Lead 00 Units/Box.KExxCARL4 AXIAL LEAD CASE 4A PLASTIC L N6 xxxca.ke xxxca YYWW L = Assembly Location N6xxxCA = JEDEC Device Code.KExxxCA = ON Device Code YY = Year WW = Work Week Axial Lead 00/Tape & Reel Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number:.KE6.8CA/D

36 .KE6.8CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R VRWM V VC IT BR V BR I T V BR Breakdown I T Test Current Maximum Temperature Coefficient of V BR I PP BiDirectional TVS 3

37 .KE6.8CA Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted.) Breakdown Voltage V I PP (Note 4.) V RWM (Note 2.) I V RWM V BR (Note 3.) I T V C I PP V BR Device (Volts) (µa) Min Nom Max (ma) (Volts) (A) (%/ C).KE6.8CA KE7.CA KE8.2CA KE9.CA KE0CA KECA KE2CA KE3CA KECA KE6CA KE8CA KE20CA KE22CA KE24CA KE27CA KE30CA KE33CA KE36CA KE39CA KE43CA KE47CA KECA KE6CA KE62CA KE68CA KE7CA KE82CA KE9CA KE00CA KE0CA KE20CA KE30CA KE0CA KE60CA KE70CA KE80CA KE200CA KE220CA KE20CA A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the dc or continuous peak operating voltage level. 3. V BR measured at pulse test current I T at an ambient temperature of 2 C. 4. Surge current waveform per Figure 4 and derate per Figures and 2. 36

38 .KE6.8CA Series P PK, PEAK POWER (kw) µs NONREPETITIVE PULSE WAVEFORM SHOWN IN FIGURE 4 µs 0 µs 00 µs ms 0 ms t P, PULSE WIDTH Figure. Pulse Rating Curve PEAK PULSE DERATING IN % OF PEAK POWER OR TA = 2 C T A, AMBIENT TEMPERATURE (C) Figure 2. Pulse Derating Curve P D, STEADY STATE POWER DISSIPATION (WATTS) / T L, LEAD TEMPERATURE (C) 3/8, VALUE (%) IPP 00 0 tr 0 µs PEAK VALUE I PP t P HALF VALUE I PP t, TIME (ms) PULSE WIDTH (t P ) IS DEFINED AS THAT POINT WHERE THE PEAK CURRENT DECAYS TO 0% OF I PP. Figure 3. Steady State Power Derating Figure 4. Pulse Waveform IT, TEST CURRENT (AMPS) T L =2C t P =0µs N6373, ICTE-, MPTE-, through N6389, ICTE-4, C, MPTE-4, C.KE6.8CA through.ke200ca V 000 BR(NOM) = 6.8 to 3 V T 00 L =2C V BR(NOM) = 6.8 to 3 V 20 V t P =0µs 20 V 24 V 43 V 24 V IT, TEST CURRENT (AMPS) V BR, INSTANTANEOUS INCREASE IN V BR V BR, INSTANTANEOUS INCREASE IN V BR ABOVE V BR(NOM) (VOLTS) Figure. Dynamic Impedance ABOVE V BR(NOM) (VOLTS) V 20 V 7 V 80 V 37

39 .KE6.8CA Series DERATING FACTOR RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitance effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 7. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 8. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. These devices have excellent response time, typically in the picosecond range and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper PULSE WIDTH 0 ms ms 00 µs 0 µs D, DUTY CYCLE (%) Figure 6. Typical Derating Factor for Duty Cycle APPLICATION NOTES circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 38

40 .KE6.8CA Series TYPICAL PROTECTION CIRCUIT Z in V in LOAD V L V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 7. Figure 8. The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance. Clipper-bidirectional devices are available in the.kexxa series and are designated with a CA suffix; for example,.ke8ca. Contact your nearest ON Semiconductor representative. 2. Clipper-bidirectional part numbers are tested in both directions to electrical parameters in preceeding table (except for V F which does not apply). UL RECOGNITION* Conditioning, Temperature test, Dielectric Voltage- Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. *Applies to.ke6.8ca.ke20ca CLIPPER BIDIRECTIONAL DEVICES 3. The N6267A through N6303A series are JEDEC registered devices and the registration does not include a CA suffix. To order clipper-bidirectional devices one must add CA to the.ke device title. 39

41 Preferred Devices SOT23 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common anode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: SOT23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range 3 V to 26 V Standard Zener Breakdown Voltage Range.6 V to 33 V Peak Power 24 or 40 ms (Unidirectional), per Figure. Waveform ESD Rating of Class N (exceeding 6 kv) per the Human Body Model Maximum Clamping Peak Pulse Current Low Leakage <.0 µa Flammability Rating UL 94VO Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the T with T3 in the Device Number to order the 3 inch/0,000 unit reel. PIN. CATHODE 2. CATHODE 3. ANODE 2 SOT23 CASE 38 STYLE xxx M MARKING DIAGRAM xxx ORDERING INFORMATION M Device Package Shipping MMBZV6ALT SOT /Tape & Reel MMBZ6V2ALT SOT /Tape & Reel MMBZ6V8ALT SOT /Tape & Reel MMBZ0VALT SOT /Tape & Reel MMBZ2VALT SOT /Tape & Reel MMBZVALT SOT /Tape & Reel MMBZ8VALT SOT /Tape & Reel MMBZ20VALT SOT /Tape & Reel MMBZ27VALT SOT /Tape & Reel 3 = Device Code = Date Code MMBZ9VALT SOT /Tape & Reel MMBZ33VALT SOT /Tape & Reel Preferred devices are recommended choices for future use and best overall value. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the table on page 42 of this data sheet. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 40 Publication Order Number: MMBZV6ALT/D

42 MMBZV6ALT Series MAXIMUM RATINGS Peak Power ms T L 2 C Rating Symbol Value Unit MMBZV6ALT thru MMBZ0VALT MMBZ2VALT thru MMBZ33VALT P pk Watts Total Power Dissipation on FR Board (Note T A = 2 C Derate above 2 C P D 22.8 mw mw/ C Thermal Resistance Junction to Ambient R θja 6 C/W Total Power Dissipation on Alumina Substrate (Note T A = 2 C Derate above 2 C P D mw mw/ C Thermal Resistance Junction to Ambient R θja 47 C/W Junction and Storage Temperature Range T J, T stg to +0 C Lead Solder Temperature Maximum (0 Second Duration) T L 260 C. Nonrepetitive current pulse per Figure. and derate above T A = 2 C per Figure FR =.0 x 0.7 x 0.62 in. 3. Alumina = 0.4 x 0.3 x in., 99.% alumina *Other voltages may be available upon request ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and 3 or 2 and 3) I F I Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C V RWM Clamping I PP Working Peak Reverse Voltage V RWM V C V BR I R I T V F V I R Maximum Reverse Leakage V RWM V BR I T V BR I F V F Z ZT I ZK Z ZK Breakdown I T Test Current Maximum Temperature Coefficient of V BR Forward Current Forward I F Maximum Zener I ZT Reverse Current Maximum Zener I ZK I PP UniDirectional TVS 4

43 MMBZV6ALT Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and 3 or Pins 2 and 3) (V F = 0.9 V I F = 0 ma) 24 WATTS Device I Breakdown Voltage Max Zener Impedance (Note.) V I PP (Note 6.) Device V RWM V RWM V BR (Note 4.) I T Z I ZT Z I ZK V C I PP V BR Marking Volts A Min Nom Max ma Ω Ω ma V A mv/c MMBZV6ALT A MMBZ6V2ALT 6A (V F =. V I F = 200 ma) Device Breakdown Voltage V I PP (Note 6.) V RWM I V RWM V BR (Note 4.) I T V C I Device PP V BR Marking Volts A Min Nom Max ma V A mv/c MMBZ6V8ALT 6A MMBZ9VALT 9A MMBZ0VALT 0A (V F =. V I F = 200 ma) 40 WATTS Device Breakdown Voltage V I PP (Note 6.) V RWM I V RWM V BR (Note 4.) I T V C I Device PP V BR Marking Volts na Min Nom Max ma V A mv/c MMBZ2VALT 2A MMBZVALT A MMBZ8VALT 8A MMBZ20VALT 20A MMBZ27VALT 27A MMBZ33VALT 33A V BR measured at pulse test current I T at an ambient temperature of 2 C.. Z ZT and Z ZK are measured by dividing the AC voltage drop across the device by the AC current applied. The specified limits are for I Z(AC) = 0. I Z(DC), with the AC frequency =.0 khz. 6. Surge current waveform per Figure. and derate per Figure 6. 42

44 MMBZV6ALT Series TYPICAL CHARACTERISTICS Figure. Typical Breakdown Voltage versus Temperature (Upper curve for each voltage is bidirectional mode, lower curve is unidirectional mode) Figure 2. Typical Leakage Current versus Temperature Figure 3. Typical Capacitance versus Bias Voltage (Upper curve for each voltage is unidirectional mode, lower curve is bidirectional mode) Figure 4. Steady State Power Derating Curve 43

45 MMBZV6ALT Series TYPICAL CHARACTERISTICS Figure. Pulse Waveform Figure 6. Pulse Derating Curve MMBZV6ALT MMBZV6ALT Figure 7. Maximum Nonrepetitive Surge Power, P pk versus PW Power is defined as V RSM x I Z (pk) where V RSM is the clamping voltage at I Z (pk). Figure 8. Maximum Nonrepetitive Surge Power, P pk (NOM) versus PW Power is defined as V Z (NOM) x I Z (pk) where V Z (NOM) is the nominal zener voltage measured at the low test current used for voltage classification. 44

46 MMBZV6ALT Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SOT23 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. Two simplified examples of TVS applications are illustrated below. Computer Interface Protection Microprocessor Protection SOLDERING PRECAUTIONS 4

47 Preferred Devices SOT23 Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications requiring transient overvoltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment and other applications. Their dual junction common cathode design protects two separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: SOT23 Package Allows Either Two Separate Unidirectional Configurations or a Single Bidirectional Configuration Working Peak Reverse Voltage Range 2.8 V, 22 V Standard Zener Breakdown Voltage Range V, 27 V Peak Power 40 ms (Bidirectional), per Figure. Waveform ESD Rating of Class N (exceeding 6 kv) per the Human Body Model Maximum Clamping Peak Pulse Current Low Leakage < 00 na Flammability Rating UL 94VO Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds Package designed for optimal automated board assembly Small package size for high density applications Available in 8 mm Tape and Reel Use the Device Number to order the 7 inch/3,000 unit reel. Replace the T with T3 in the Device Number to order the 3 inch/0,000 unit reel. 2 PIN. ANODE 2. ANODE 3. CATHODE 2 3 SOT23 CASE 38 STYLE 9 MARKING DIAGRAM xxx M xxx M = D or 27C = Date Code ORDERING INFORMATION Device Package Shipping MMBZVDLT SOT /Tape & Reel MMBZVDLT3 SOT23 0,000/Tape & Reel MMBZ27VCLT SOT /Tape & Reel 3 Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: MMBZVDLT/D

48 MMBZVDLT, MMBZ27VCLT MAXIMUM RATINGS Rating Symbol Value Unit Peak Power ms T L 2 C P pk 40 Watts Total Power Dissipation on FR Board (Note T A = 2 C Derate above 2 C P D 22.8 mw mw/ C Thermal Resistance Junction to Ambient R θja 6 C/W Total Power Dissipation on Alumina Substrate (Note T A = 2 C Derate above 2 C P D mw mw/ C Thermal Resistance Junction to Ambient R θja 47 C/W Junction and Storage Temperature Range T J, T stg to +0 C Lead Solder Temperature Maximum (0 Second Duration) T L 230 C. Nonrepetitive current pulse per Figure. and derate above T A = 2 C per Figure FR =.0 x 0.7 x 0.62 in. 3. Alumina = 0.4 x 0.3 x in., 99.% alumina ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and 3 or 2 and 3) I F I Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C V RWM Clamping I PP Working Peak Reverse Voltage V RWM V C V BR I R I T V F V I R Maximum Reverse Leakage V RWM V BR I T V BR I F V F Breakdown I T Test Current Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS 47

49 MMBZVDLT, MMBZ27VCLT ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) UNIDIRECTIONAL (Circuit tied to Pins and 3 or Pins 2 and 3) (V F = 0.9 V I F = 0 ma) Device Breakdown Voltage V I PP (Note.) V RWM I V RWM V BR (Note 4.) I T V C I Device PP V BR Marking Volts na Min Nom Max ma V A mv/c MMBZVDLT D (V F =. V I F = 200 ma) Device Breakdown Voltage V I PP (Note.) V RWM I V RWM V BR (Note 4.) I T V C I Device PP V BR Marking Volts na Min Nom Max ma V A mv/c MMBZ27VCLT 27C V BR measured at pulse test current I T at an ambient temperature of 2 C.. Surge current waveform per Figure. and derate per Figure 6. TYPICAL CHARACTERISTICS MMBZVDLT MMBZ27VCLT Figure. Typical Breakdown Voltage versus Temperature Figure 2. Typical Breakdown Voltage versus Temperature 48

50 MMBZVDLT, MMBZ27VCLT Figure 3. Typical Leakage Current versus Temperature Figure 4. Steady State Power Derating Curve Figure. Pulse Waveform SOLDERING PRECAUTIONS Figure 6. Pulse Derating Curve 49

51 SC9 Quad Common Anode for Zeners ESD Protection These quad monolithic silicon voltage suppressors are designed for applications requiring transient voltage protection capability. They are intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Their quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features: SC9 Package Allows Four Separate Unidirectional Configurations Working Peak Reverse Voltage Range 3.0 V to 2. V Standard Zener Breakdown Voltage Range.6 V to 33 V Peak Power Minimum 24 ms (Unidirectional), per Figure Peak Power Minimum 0 20 s (Unidirectional), per Figure 6 ESD Rating of Class 3 (> 6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications Low Leakage < 2.0 A Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds MAXIMUM RATINGS Peak Power Dissipation T L 2 C Peak Power Dissipation (Note 20 T L 2 C Rating Symbol Value Unit Total Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance Junction to Ambient Total Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance Junction to Ambient P PK 24 W P PK 0 W P D R JA P D R JA Junction and Storage Temperature Range T J, T stg to +0 mw mw/ C C/W mw mw/ C C/W. Nonrepetitive current pulse per Figure and derated above T A = 2 C per Figure 4 2. Nonrepetitive current pulse per Figure 6 and derated above T A = 2 C per Figure 4 3. FR board =.0 X 0.7 X 0.62 in. 4. Alumina substrate = 0.4 X 0.3 X in., 99.% alumina C SC9 CASE 38F STYLE xxx M PIN ASSIGNMENT MARKING DIAGRAM xxx = Device Code = (See Table Next Page) = Date Code ORDERING INFORMATION Device Package Shipping MMQAxxxT SC9 3000/Tape & Reel MMQAxxxT3 SC9 0,000/Tape & Reel The T suffix refers to an 8 mm, 7 inch reel. The T3 suffix refers to an 8 mm, 3 inch reel. M Semiconductor Components Industries, LLC, 200 March, 200 Rev. 4 0 Publication Order Number: MMQAV6T/D

52 MMQAV6T Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 0.9 V I F (Note.) = 0 ma) Unidirectional (Circuit tied to Pins, 2 and ; Pins 2, 3 and ; or 2, 4 and 6; or Pins 2, and 6) I F I Symbol Parameter I PP V C V RWM Maximum Reverse Peak Pulse Current Clamping I PP Working Peak Reverse Voltage V RWM V C V BR I R I T V F V I R Maximum Reverse Leakage V RWM Z ZT V BR I T V BR I F V F Maximum Zener I ZT Breakdown I T Test Current Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS ELECTRICAL CHARACTERISTICS Device Breakdown Voltage V I PP (Note 7.) I Z ZT (Note 6.) V RWM V RWM V BR (Note.) I I ZT V C I PP V Device BR Marking Volts na Min Nom Max ma ma Volts Amps mw/c MMQAV6T A MMQA6V2T 6A MMQA6V8T 6A MMQA2VT 2A MMQA3VT 3A MMQAVT A MMQA8VT 8A MMQA20VT 20A MMQA2VT 2A MMQA22VT 22A MMQA24VT 24A MMQA27VT 27A MMQA30VT 30A MMQA33VT 33A V BR measured at pulse test current I T at an ambient temperature of 2 C 6. Z ZT is measured by dividing the AC voltage drop across the device by the AC current supplied. The specified limits are I Z (ac) = 0. I Z (dc) with the AC frequency =.0 khz 7. Surge current waveform per Figure and derate per Figure 4

53 MMQAV6T Series TYPICAL CHARACTERISTICS Figure. Typical Capacitance Figure 2. Typical Leakage Current Figure 3. Steady State Power Derating Curve Figure 4. Pulse Derating Curve 2

54 MMQAV6T Series TYPICAL CHARACTERISTICS µ Figure s Pulse Waveform Figure s Pulse Waveform Figure 7. Maximum NonRepetitive Surge Power, Ppk versus PW Figure 8. Typical Maximum NonRepetitive Surge Power, Ppk versus V BR Power is defined as V RSM x I Z (pk) where V RSM is the clamping voltage at I Z (pk). 3

55 MMQAV6T Series TYPICAL COMMON ANODE APPLICATIONS A quad junction common anode design in a SC-74 package protects four separate lines using only one package. This adds flexibility and creativity to PCB design especially when board space is at a premium. A simplified example of MMQA Series Device applications is illustrated below. Computer Interface Protection Microprocessor Protection 4

56 Unidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.0 V to 78 V Standard Zener Breakdown Voltage Range 6.7 V to 9.2 V Peak Power 400 ms ESD Rating of Class 3 (> 6 KV) per Human Body Model Response Time is Typically < ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds POLARITY: Cathode indicated by molded polarity notch or polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 400 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS.078 VOLTS V R 400 WATTS PEAK POWER CATHODE xx LL Y WW SMA CASE 403B PLASTIC MARKING DIAGRAM xx LLYWW ANODE = Specific Device Code = (See Table Next Page) = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping SMAxxAT3 SMA 000/Tape & Reel *Please see SMA0CAT3 to SMA78CAT3 for Bidirectional devices. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 3 Publication Order Number: SMA.0AT3/D

57 SMA.0AT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F = 40 A for all types) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP Working Peak Reverse Voltage Maximum Reverse Leakage V RWM Breakdown I T Test Current Forward Current V RWM I R V BR I T I F V RWM V C V BR I R I T V F V I PP V F Forward I F ELECTRICAL CHARACTERISTICS Breakdown Voltage UniDirectional TVS V I PP Device Device V RWM I V RWM V BR I T V C I PP Marking Volts µa Min Nom Max ma Volts Amps SMA.0AT3 QE SMA6.0AT3 QG SMA6.AT3 QK SMA7.0AT3 QM SMA7.AT3 QP SMA8.0AT3 QR SMA8.AT3 QT SMA9.0AT3 QV SMA0AT3 QX SMAAT3 QZ SMA2AT3 RE SMA3AT3 RG SMA4AT3 RK SMAAT3 RM SMA6AT3 RP SMA7AT3 RR SMA8AT3 RT SMA20AT3 RV SMA22AT3 RX SMA24AT3 RZ SMA26AT3 SE SMA28AT3 SG SMA30AT3 SK SMA33AT3 SM SMA36AT3 SP SMA40AT3 SR SMA43AT3 ST SMA4AT3 SV SMA48AT3 SX SMAAT3 SZ SMA4AT3 TE SMA8AT3 TG SMA60AT3 TK SMA64AT3 TM SMA70AT3 TP SMA7AT3 TR SMA78AT3 TS

58 SMA.0AT3 Series RATING AND TYPICAL CHARACTERISTIC CURVES µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform Figure 3. Pulse Derating Curve Figure 4. Typical Junction T A = 2 C P D = 0. T L = 7 C P D =. W Figure. Steady State Power Derating 7

59 Bidirectional* The SMA series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMA series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range 0 V to 78 V Standard Zener Breakdown Voltage Range.7 V to 9.3 V Peak Power 400 ms ESD Rating of Class 3 (> 6 KV) per Human Body Model Response Time is Typically < ns Flat Handling Surface for Accurate Placement Package Design for Top Slide or Bottom Circuit Board Mounting Low Profile Package Mechanical Characteristics: CASE: Void-free, transfer-molded plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds POLARITY: Cathode polarity notch does not indicate polarity MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 400 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see SMA.0AT3 to SMA78AT3 for Unidirectional devices. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 078 VOLTS V R 400 WATTS PEAK POWER xxc LL Y WW SMA CASE 403B PLASTIC MARKING DIAGRAM xxc LLYWW = Specific Device Code = (See Table Next Page) = Assembly Location = Year = Work Week ORDERING INFORMATION Device Package Shipping SMAxxCAT3 SMA 000/Tape & Reel The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 3 8 Publication Order Number: SMA0CAT3/D

60 SMA0CAT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R V RWM V BR V C IT V BR I T Breakdown I T Test Current I PP BiDirectional TVS ELECTRICAL CHARACTERISTICS Breakdown Voltage V I PP Device Device V RWM I V RWM V BR I T V C I PP Marking Volts µa Min Nom Max ma Volts Amps SMA0CAT3 QXC SMACAT3 QZC SMA2CAT3 REC SMA3CAT3 RGC SMA4CAT3 RKC SMACAT3 RMC SMA6CAT3 RPC SMA7CAT3 RRC SMA8CAT3 RTC SMA20CAT3 RVC SMA22CAT3 RXC SMA24CAT3 RZC SMA26CAT3 SEC SMA28CAT3 SGC SMA30CAT3 SKC SMA33CAT3 SMC SMA36CAT3 SPC SMA40CAT3 SRC SMA43CAT3 STC SMA4CAT3 SVC SMA48CAT3 SXC SMACAT3 SZC SMA4CAT3 TEC SMA8CAT3 TGC SMA60CAT3 TKC SMA64CAT3 TMC SMA70CAT3 TPC SMA7CAT3 TRC SMA78CAT3 TTC

61 SMA0CAT3 Series RATING AND TYPICAL CHARACTERISTIC CURVES µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform Figure 3. Pulse Derating Curve 60

62 Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.0 V to 70 V Standard Zener Breakdown Voltage Range 6.7 V to 99 V Peak Power 600 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 600 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see SMB0CAT3 to SMB78CAT3 for Bidirectional devices. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS.070 VOLTS 600 WATT PEAK POWER Cathode Y WW xx SMB CASE 403A PLASTIC MARKING DIAGRAM YWW xx Anode = Year = Work Week = Specific Device Code = (See Table Page 63) ORDERING INFORMATION Device Package Shipping SMBxxxAT3 SMB 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 3 6 Publication Order Number: SMB.0AT3/D

63 SMB.0AT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 4.) = 30 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current I F Forward Current I PP V F Forward I F 4. /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum. UniDirectional TVS 62

64 SMB.0AT3 Series ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device SMB.0AT3 SMB6.0AT3 SMB6.AT3 SMB7.0AT3 SMB7.AT3 SMB8.0AT3 SMB8.AT3 SMB9.0AT3 SMB0AT3 SMBAT3 SMB2AT3 SMB3AT3 SMB4AT3 SMBAT3 SMB6AT3 SMB7AT3 SMB8AT3 SMB20AT3 SMB22AT3 SMB24AT3 SMB26AT3 SMB28AT3 SMB30AT3 SMB33AT3 SMB36AT3 SMB40AT3 SMB43AT3 SMB4AT3 SMB48AT3 SMBAT3 SMB4AT3 SMB8AT3 SMB60AT3 SMB64AT3 SMB70AT3 SMB7AT3 SMB78AT3 SMB8AT3 SMB90AT3 SMB00AT3 SMB0AT3 SMB20AT3 SMB30AT3 SMB0AT3 SMB60AT3 SMB70AT3 Breakdown Voltage V I PP (Note 7.) V RWM (Note.) I V RWM V BR (Note 6.) I T V C I PP Device Marking Volts µa Min Nom Max ma Volts Amps KE KG KK KM KP KR KT KV KX KZ LE LG LK LM LP LR LT LV LX LZ ME MG MK MM MP MR MT MV MX MZ NE NG NK NM NP NR NT NV NX NZ PE PG PK PM PP PR A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the DC or continuous peak operating voltage level. 6. V BR measured at pulse test current I T at an ambient temperature of 2 C. 7. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 W at the beginning of this group

65 SMB.0AT3 Series P PK, PEAK POWER (kw) µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform TYPICAL PROTECTION CIRCUIT Figure 3. Pulse Derating Curve C, CAPACITANCE (pf) 0, V RWM ZERO BIAS V BR, BREAKDOWN VOLTAGE (VOLTS) Figure 4. Capacitance versus Breakdown Voltage 64

66 SMB.0AT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 6

67 SMB.0AT3 Series V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure. Figure 6. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 7. Typical Derating Factor for Duty Cycle UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 66

68 Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range 0 V to 78 V Standard Zener Breakdown Voltage Range.7 V to 9.3 V Peak Power 600 ms ESD Rating of Class 3 (> 6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Polarity band will not be indicated MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 600 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see SMB.0AT3 to SMB70AT3 for Unidirectional devices. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 078 VOLTS 600 WATT PEAK POWER Y WW xxc SMB CASE 403A PLASTIC MARKING DIAGRAM YWW xxc = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device Package Shipping SMBxxCAT3 SMB 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: SMB0CAT3/D

69 SMB0CAT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R V RWM V BR V C IT V BR I T Breakdown I T Test Current I PP BiDirectional TVS ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device SMB0CAT3 SMBCAT3 SMB2CAT3 SMB3CAT3 SMB4CAT3 SMBCAT3 SMB6CAT3 SMB7CAT3 SMB8CAT3 SMB20CAT3 SMB22CAT3 SMB24CAT3 SMB26CAT3 SMB28CAT3 SMB30CAT3 SMB33CAT3 SMB36CAT3 SMB40CAT3 SMB43CAT3 SMB4CAT3 SMB48CAT3 SMBCAT3 SMB4CAT3 SMB8CAT3 SMB60CAT3 SMB64CAT3 SMB70CAT3 SMB7CAT3 Breakdown Voltage V I PP (Note 6.) V RWM (Note 4.) I V RWM V BR (Note.) I T V C I PP Device Marking Volts µa Min Nom Max ma Volts Amps KXC KZC LEC LGC LKC LMC LPC LRC LTC LVC LXC LZC MEC MGC MKC MMC MPC MRC MTC MVC MXC MZC NEC NGC NKC NMC NPC NRC SMB78CAT3 NTC A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the DC or continuous peak operating voltage level.. V BR measured at pulse test current I T at an ambient temperature of 2 C. 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group

70 SMB0CAT3 Series P PK, PEAK POWER (kw) µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform TYPICAL PROTECTION CIRCUIT Figure 3. Pulse Derating Curve 69

71 SMB0CAT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 70

72 SMB0CAT3 Series V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 4. Figure. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 6. Typical Derating Factor for Duty Cycle UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 7

73 Unidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.8 to 7 V Standard Zener Breakdown Voltage Range 6.8 to 200 V Peak Power 600 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by polarity band MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 600 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see P6SMBCAT3 to P6SMB9CAT3 for Bidirectional devices. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS VOLTS 600 WATT PEAK POWER Cathode Y WW xxxa SMB CASE 403A PLASTIC MARKING DIAGRAM YWW xxxa Anode = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device Package Shipping P6SMBxxxAT3 SMB 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: P6SMB6.8AT3/D

74 P6SMB6.8AT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 4) = 0 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current V BR I F V F Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device P6SMB6.8AT3 P6SMB7.AT3 P6SMB8.2AT3 P6SMB9.AT3 P6SMB0AT3 P6SMBAT3 P6SMB2AT3 P6SMB3AT3 P6SMBAT3 P6SMB6AT3 P6SMB8AT3 P6SMB20AT3 P6SMB22AT3 P6SMB24AT3 P6SMB27AT3 P6SMB30AT3 P6SMB33AT3 P6SMB36AT3 P6SMB39AT3 P6SMB43AT3 P6SMB47AT3 P6SMBAT3 P6SMB6AT3 P6SMB62AT3 P6SMB68AT3 P6SMB7AT3 P6SMB82AT3 P6SMB9AT3 P6SMB00AT3 P6SMB0AT3 P6SMB20AT3 P6SMB30AT3 P6SMB0AT3 P6SMB60AT3 P6SMB70AT3 P6SMB80AT3 Breakdown Voltage V I PP (Note 6.) V RWM I V RWM V BR (Note ) I T V C I PP V Device BR Marking Volts µa Min Nom Max ma Volts Amps %/ C 6V8A 7VA 8V2A 9VA 0A A 2A 3A A 6A 8A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A A 6A 62A 68A 7A 82A 9A 00A 0A 20A 30A 0A 60A 70A 80A P6SMB200AT3 200A /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.. V BR measured at pulse test current I T at an ambient temperature of 2 C. 6. Surge current waveform per Figure 2 and derate per Figure 3. 73

75 P6SMB6.8AT3 Series µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform TYPICAL PROTECTION CIRCUIT Figure 3. Pulse Derating Curve C, CAPACITANCE (pf) 0, V RWM ZERO BIAS V BR, BREAKDOWN VOLTAGE (VOLTS) Figure 4. Capacitance versus Breakdown Voltage 74

76 P6SMB6.8AT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 7

77 P6SMB6.8AT3 Series V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure. Figure 6. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 7. Typical Derating Factor for Duty Cycle UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 76

78 Bidirectional* The SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMB series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range 9.4 to 77.8 V Standard Zener Breakdown Voltage Range to 9 V Peak Power 600 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Polarity band will not be indicated MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 600 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. *Please see P6SMB6.8AT3 to P6SMB200AT3 for Unidirectional devices. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS 9 VOLTS 600 WATT PEAK POWER Y WW xxc SMB CASE 403A PLASTIC MARKING DIAGRAM YWW xxc = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device Package Shipping P6SMBxxCAT3 SMB 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: P6SMBCAT3/D

79 P6SMBCAT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C Clamping I PP V RWM Working Peak Reverse Voltage I R Maximum Reverse Leakage V RWM I PP I I T V C V BR V RWM I R V I R VRWM V VC IT BR V BR I T V BR Breakdown I T Test Current Maximum Temperature Coefficient of V BR I PP BiDirectional TVS ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device P6SMBCAT3 P6SMB2CAT3 P6SMB3CAT3 P6SMBCAT3 P6SMB6CAT3 P6SMB8CAT3 P6SMB20CAT3 P6SMB22CAT3 P6SMB24CAT3 P6SMB27CAT3 P6SMB30CAT3 P6SMB33CAT3 P6SMB36CAT3 P6SMB39CAT3 P6SMB43CAT3 P6SMB47CAT3 P6SMBCAT3 P6SMB6CAT3 P6SMB62CAT3 P6SMB68CAT3 P6SMB7CAT3 P6SMB82CAT3 P6SMB9CAT3 Breakdown Voltage V I PP (Note.) V RWM I V RWM V BR (Note 4.) I T V C I PP V Device BR Marking Volts µa Min Nom Max ma Volts Amps %/ C C 2C 3C C 6C 8C 20C 22C 24C 27C 30C 33C 36C 39C 43C 47C C 6C 62C 68C 7C 82C 9C V BR measured at pulse test current I T at an ambient temperature of 2 C.. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 600 Watt at the beginning of this group

80 P6SMBCAT3 Series µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform TYPICAL PROTECTION CIRCUIT Figure 3. Pulse Derating Curve 79

81 P6SMBCAT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure 4. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMB series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 6. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 6 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 6 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 80

82 P6SMBCAT3 Series V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure 4. Figure. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 6. Typical Derating Factor for Duty Cycle UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 8

83 Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMC series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.8 to 77.8 V Standard Zener Breakdown Voltage Range 6.8 to 9 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Maximum Temperature Coefficient Specified Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by molded polarity notch MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 00 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. C PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSORS.878 VOLTS 00 WATT PEAK POWER Cathode Y WW xxxa SMC CASE 403 PLASTIC MARKING DIAGRAM YWW xxxa Anode = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device Package Shipping.SMCxxxAT3 SMC 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. *Bidirectional devices will not be available in this series. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number:.SMC6.8AT3/D

84 .SMC6.8AT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 4.) = 00 A) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current V BR I F V F Maximum Temperature Coefficient of V BR Forward Current Forward I F I PP UniDirectional TVS ELECTRICAL CHARACTERISTICS (Devices listed in bold, italic are ON Semiconductor Preferred devices.) Device.SMC6.8AT3.SMC7.AT3.SMC8.2AT3.SMC9.AT3.SMC0AT3.SMCAT3.SMC2AT3.SMC3AT3.SMCAT3.SMC6AT3.SMC8AT3.SMC20AT3.SMC22AT3.SMC24AT3.SMC27AT3.SMC30AT3.SMC33AT3.SMC36AT3.SMC39AT3.SMC43AT3.SMC47AT3.SMCAT3.SMC6AT3.SMC62AT3.SMC68AT3.SMC7AT3.SMC82AT3.SMC9AT3 Breakdown Voltage V I PP (Note 6.) V RWM I V RWM V BR (Note.) I T V C I PP V Device BR Marking Volts µa Min Nom Max ma Volts Amps %/ C 6V8A 7VA 8V2A 9VA 0A A 2A 3A A 6A 8A 20A 22A 24A 27A 30A 33A 36A 39A 43A 47A A 6A 62A 68A 7A 82A 9A /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.. V BR measured at pulse test current I T at an ambient temperature of 2 C. 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 00 Watt at the beginning of this group

85 .SMC6.8AT3 Series P pk, PEAK POWER (kw) µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform I T, TEST CURRENT (AMPS) µ Figure 3. Pulse Derating Curve Figure 4. Dynamic Impedance UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 84

86 .SMC6.8AT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMC series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 8

87 .SMC6.8AT3 Series TYPICAL PROTECTION CIRCUIT V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure. Figure 6. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 7. Typical Derating Factor for Duty Cycle 86

88 Unidirectional* The SMC series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping capability, high surge capability, low zener impedance and fast response time. The SMC series is supplied in ON Semiconductor s exclusive, cost-effective, highly reliable Surmetic package and is ideally suited for use in communication systems, automotive, numerical controls, process controls, medical equipment, business machines, power supplies and many other industrial/consumer applications. Specification Features: Working Peak Reverse Voltage Range.0 V to 78 V Standard Zener Breakdown Voltage Range 6.7 V to 9.2 V Peak Power 00 ms ESD Rating of Class 3 (>6 KV) per Human Body Model Maximum Clamp Peak Pulse Current Low Leakage < µa Above 0 V UL 497B for Isolated Loop Circuit Protection Maximum Temperature Coefficient Specified Response Time is Typically < ns Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds LEADS: Modified LBend providing more contact area to bond pads POLARITY: Cathode indicated by molded polarity notch MOUNTING POSITION: Any MAXIMUM RATINGS Peak Power Dissipation T L = 2 C, Pulse Width = ms Rating Symbol Value Unit DC Power T L = 7 C Measured Zero Lead Length (Note 2.) Derate Above 7 C Thermal Resistance from Junction to Lead DC Power Dissipation (Note T A = 2 C Derate Above 2 C Thermal Resistance from Junction to Ambient Operating and Storage Temperature Range P PK 00 W P D R JL P D R JA T J, T stg to +0 W mw/ C C/W W mw/ C C/W. 0 X 000 s, nonrepetitive 2. square copper pad, FR4 board 3. FR4 board, using ON Semiconductor minimum recommended footprint, as shown in 403B case outline dimensions spec. C PLASTIC SURFACE MOUNT ZENER TRANSIENT VOLTAGE SUPPRESSORS.078 VOLTS 00 WATT PEAK POWER Cathode Y WW Gxx SMC CASE 403 PLASTIC MARKING DIAGRAM YWW Gxx Anode = Year = Work Week = Specific Device Code = (See Table Next Page) ORDERING INFORMATION Device Package Shipping SMCxxxAT3 SMC 200/Tape & Reel Devices listed in bold, italic are ON Semiconductor Preferred devices. Preferred devices are recommended choices for future use and best overall value. *Bidirectional devices will not be available in this series. The T3 suffix refers to a 3 inch reel. Semiconductor Components Industries, LLC, 200 February, 200 Rev Publication Order Number: SMC.0AT3/D

89 SMC.0AT3 Series ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Symbol Parameter Maximum Reverse Peak Pulse Current I PP I F I V C Clamping I PP V RWM I R Working Peak Reverse Voltage Maximum Reverse Leakage V RWM V RWM V C V BR I R I T V F V V BR Breakdown I T I T Test Current I F Forward Current I PP V F Forward I F ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted) Device SMC.0AT3 SMC6.0AT3 SMC6.AT3 SMC7.0AT3 SMC7.AT3 SMC8.0AT3 SMC8.AT3 SMC9.0AT3 SMC0AT3 SMCAT3 SMC2AT3 SMC3AT3 SMC4AT3 SMCAT3 SMC6AT3 SMC7AT3 SMC8AT3 SMC20AT3 SMC22AT3 SMC24AT3 SMC26AT3 SMC28AT3 SMC30AT3 SMC33AT3 SMC36AT3 SMC40AT3 SMC43AT3 SMC4AT3 SMC48AT3 SMCAT3 SMC4AT3 SMC8AT3 SMC60AT3 SMC64AT3 SMC70AT3 SMC7AT3 SMC78AT3 UniDirectional TVS Breakdown Voltage V I PP (Note 6.) V RWM (Note 4.) I V RWM V BR (Note.) I T V C I PP Device Marking Volts µa Min Nom Max ma Volts Amps GDE GDG GDK GDM GDP GDR GDT GDV GDX GDZ GEE GEG GEK GEM GEP GER GET GEV GEX GEZ GFE GFG GFK GFM GFP GFR GFT GFV GFX GFZ GGE GGG GGK GGM GGP GGR GGT A transient suppressor is normally selected according to the maximum working peak reverse voltage (V RWM ), which should be equal to or greater than the DC or continuous peak operating voltage level.. V BR measured at pulse test current I T at an ambient temperature of 2 C. 6. Surge current waveform per Figure 2 and derate per Figure 3 of the General Data 00 Watt at the beginning of this group. 88

90 SMC.0AT3 Series P pk, PEAK POWER (kw) µ µ µ µ µ Figure. Pulse Rating Curve Figure 2. Pulse Waveform I T, TEST CURRENT (AMPS) µ Figure 3. Pulse Derating Curve Figure 4. Dynamic Impedance UL RECOGNITION The entire series has Underwriters Laboratory Recognition for the classification of protectors (QVGV2) under the UL standard for safety 497B and File #60. Many competitors only have one or two devices recognized or have recognition in a non-protective category. Some competitors have no recognition at all. With the UL497B recognition, our parts successfully passed several tests including Strike Voltage Breakdown test, Endurance Conditioning, Temperature test, Dielectric Voltage-Withstand test, Discharge test and several more. Whereas, some competitors have only passed a flammability test for the package material, we have been recognized for much more to be included in their Protector category. 89

91 SMC.0AT3 Series APPLICATION NOTES RESPONSE TIME In most applications, the transient suppressor device is placed in parallel with the equipment or component to be protected. In this situation, there is a time delay associated with the capacitance of the device and an overshoot condition associated with the inductance of the device and the inductance of the connection method. The capacitive effect is of minor importance in the parallel protection scheme because it only produces a time delay in the transition from the operating voltage to the clamp voltage as shown in Figure. The inductive effects in the device are due to actual turn-on time (time required for the device to go from zero current to full current) and lead inductance. This inductive effect produces an overshoot in the voltage across the equipment or component being protected as shown in Figure 6. Minimizing this overshoot is very important in the application, since the main purpose for adding a transient suppressor is to clamp voltage spikes. The SMC series have a very good response time, typically < ns and negligible inductance. However, external inductive effects could produce unacceptable overshoot. Proper circuit layout, minimum lead lengths and placing the suppressor device as close as possible to the equipment or components to be protected will minimize this overshoot. Some input impedance represented by Z in is essential to prevent overstress of the protection device. This impedance should be as high as possible, without restricting the circuit operation. DUTY CYCLE DERATING The data of Figure applies for non-repetitive conditions and at a lead temperature of 2 C. If the duty cycle increases, the peak power must be reduced as indicated by the curves of Figure 7. Average power must be derated as the lead or ambient temperature rises above 2 C. The average power derating curve normally given on data sheets may be normalized and used for this purpose. At first glance the derating curves of Figure 7 appear to be in error as the 0 ms pulse has a higher derating factor than the 0 µs pulse. However, when the derating factor for a given pulse of Figure 7 is multiplied by the peak power value of Figure for the same pulse, the results follow the expected trend. 90

92 SMC.0AT3 Series TYPICAL PROTECTION CIRCUIT Z in V in LOAD VL V V in (TRANSIENT) V OVERSHOOT DUE TO INDUCTIVE EFFECTS V in (TRANSIENT) V L V L V in t d t D = TIME DELAY DUE TO CAPACITIVE EFFECT t t Figure. Figure 6. DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) Figure 7. Typical Derating Factor for Duty Cycle 9

93 This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems, medical equipment, and other applications. Its quad junction common anode design protects four separate lines using only one package. These devices are ideal for situations where board space is at a premium. Specification Features SC88A Package Allows Four Separate Unidirectional Configurations Low Leakage < 3 Volt Breakdown Voltage: 6. Volt 7.2 ma Low Capacitance (90 pf typical) ESD Protection Meeting IEC00042 SC88A/SOT323 CASE 49A 6 = Device Marking D = One Digit Date Code MARKING DIAGRAM D Mechanical Characteristics Void Free, TransferMolded, Thermosetting Plastic Case Corrosion Resistant Finish, Easily Solderable Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ORDERING INFORMATION Device Package Shipping MSQA6VWT2 SC88A 3000/Tape & Reel NOTE: T2 Suffix Devices are Packaged with Pin NOTE: Opposing Sprocket Hole. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 92 Publication Order Number: MSQA6VWT2/D

94 MSQA6VWT2 MAXIMUM RATINGS (T A = 2 C unless otherwise noted) Characteristic Symbol Value Unit Peak Power 20 A 2 C (Note.) P pk 0 Watts Steady State Power Diode (Note 2.) P D 38 mw Thermal Resistance Junction to Ambient Above 2 C, Derate R JA C/W mw/ C Maximum Junction Temperature T Jmax 0 C Operating Junction and Storage Temperature Range T J T stg to +0 C ESD Discharge MIL STD 883C Method 306 IEC00042, Air Discharge IEC00042, Contact Discharge V PP kv Lead Solder Temperature (0 seconds duration) T L 260 C ELECTRICAL CHARACTERISTICS Breakdown Voltage V ma (Volts) Leakage Current I V RM = 3 V 0 V Bias Max V I F = 200 ma Device Min Nom Max (A) (pf) (V) MSQA6VW Nonrepetitive current per Figure. Derate per Figure Only diode under power. For all 4 diodes under power, P D will be 2%. Mounted on FR4 board with min pad. NOTE: NonRepetitive Surge. Figure. Pulse Width Figure s Pulse Waveform 93

95 MSQA6VWT2 Figure 3. Pulse Derating Curve Figure 4. Capacitance 2. s SQUARE WAVE Figure. Forward Voltage Figure 6. Clamping Voltage versus Peak Pulse Current (Reverse Direction) 2. s SQUARE WAVE Figure 7. Clamping Voltage versus Peak Pulse Current (Forward Direction) 94

96 The PMT.0AT3 Series is designed to protect voltage sensitive components from high voltage, high energy transients. Excellent clamping capability, high surge capability, low zener impedance and fast response time. The advanced packaging technique provides for a highly efficient micro miniature, space saving surface mount with its unique heat sink design. The POWERMITE has the same thermal performance as the SMA while being 0% smaller in footprint area, and delivering one of the lowest height profiles (. mm) in the industry. Because of its small size, it is ideal for use in cellular phones, portable devices, business machines, power supplies and many other industrial/consumer applications. Specification Features: Standoff Voltage: 8 Volts Peak Power 7 ms Maximum Clamp Peak Pulse Current Low Leakage Response Time is Typically < ns ESD Rating of Class 3 (> 6 kv) per Human Body Model Low Profile Maximum Height of. mm Integral Heat Sink/Locking Tabs Full Metallic Bottom Eliminates Flux Entrapment Small Footprint Footprint Area of 8.4 mm 2 Supplied in 2 mm Tape and Reel 2,000 Units per Reel POWERMITE is JEDEC Registered as DO26AA Mechanical Characteristics: CASE: Void-free, transfer-molded, thermosetting plastic FINISH: All external surfaces are corrosion resistant and leads are readily solderable MOUNTING POSITION: Any MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260 C for 0 Seconds PLASTIC SURFACE MOUNT ZENER OVERVOLTAGE TRANSIENT SUPPRESSOR 8 VOLTS 7 WATT PEAK POWER 2 : CATHODE 2: ANODE POWERMITE CASE 47 PLASTIC MARKING DIAGRAM Mxx D Mxx = Specific Device Code xx = 8 = (See Table Next Page) D = Date Code ORDERING INFORMATION Device Package Shipping PMTxxAT3 POWERMITE 2,000/Tape & Reel LEAD ORIENTATION IN TAPE: Cathode (Short) Lead to Sprocket Holes Semiconductor Components Industries, LLC, 200 March, 200 Rev. 3 9 Publication Order Number: PMT.0AT3/D

97 PMT.0AT3 Series MAXIMUM RATINGS Rating Symbol Value Unit Maximum P pk T A = 2 C, (PW0/000 s) (Note.) P pk 7 W Maximum P pk T A = 2 C, (PW8/20 s) (Note.) P pk 000 W DC Power T A = 2 C (Note 2.) Derate above 2 C Thermal Resistance from Junction to Ambient P D R θja mw mw/ C C/W Thermal Resistance from Junction to Lead (Anode) R θjanode 3 C/W Maximum DC Power Dissipation (Note 3.) Thermal Resistance from Junction to Tab (Cathode) P D 3.2 R θjcathode 23 W C/W Operating and Storage Temperature Range T J, T stg to +0 C. Nonrepetitive current pulse at T A = 2 C. 2. Mounted with recommended minimum pad size, DC board FR4. 3. At Tab (Cathode) temperature, T tab = 7 C ELECTRICAL CHARACTERISTICS (T A = 2 C unless otherwise noted, V F = 3. V I F (Note 4.) = 3 A) I F I Symbol Parameter I PP Maximum Reverse Peak Pulse Current V C V RWM Clamping I PP Working Peak Reverse Voltage V RWM V C V BR I R I T V F V I R Maximum Reverse Leakage V RWM V BR Breakdown I T I T I F V F Test Current Forward Current Forward I F I PP UniDirectional TVS ELECTRICAL CHARACTERISTICS (T L = 30 C unless otherwise noted, V F = ma) V R (V) V I T (V) (Note 6.) I T I V RWM V I PP I PP (A) Device Marking (Note.) Min Nom Max (ma) (A) (V) (Note 7.) PMT.0AT3 MKE PMT7.0AT3 MKM PMT2AT3 MLE PMT6AT3 MLP PMT8AT3 MLT PMT22AT3 MLX PMT24AT3 MLZ PMT26AT3 MME PMT28AT3 MMG PMT30AT3 MMK PMT33AT3 MMM PMT36AT3 MMP PMT40AT3 MMR PMT48AT3 MMX PMTAT3 MMZ PMT8AT3 MNG /2 sine wave (or equivalent square wave), PW = 8.3 ms, duty cycle = 4 pulses per minute maximum.. A transient suppressor is normally selected according to the Working Peak Reverse Voltage (V RWM ) which should be equal to or greater than the DC or continuous peak operating voltage level. 6. V BR measured at pulse test current I T at ambient temperature of 2 C. 7. Surge current waveform per Figure 2 and derate per Figure 4. 96

98 PMT.0AT3 Series TYPICAL PROTECTION CIRCUIT µ Figure. Pulse Rating Curve Figure 2. 0 X 000 s Pulse Waveform Figure 3. 8 X 20 s Pulse Waveform Figure 4. Pulse Derating Curve 97

99 PMT.0AT3 Series DERATING FACTOR µs PULSE WIDTH 0 ms ms 00 µs D, DUTY CYCLE (%) P D, MAXIMUM POWER DISSIPATION (W) T, TEMPERATURE ( C) T L Figure. Typical Derating Factor for Duty Cycle Figure 6. Steady State Power Derating V F, TYPICAL FORWARD VOLTAGE (VOLTS) T, TEMPERATURE ( C) Figure 7. Forward Voltage C, CAPACITANCE (pf) 0, % V RWM ZERO BIAS WORKING PEAK REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance versus Working Peak Reverse Voltage 98

100 for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications requiring transient overvoltage protection capability. It is intended for use in voltage and ESD sensitive equipment such as computers, printers, business machines, communication systems and other applications. This quad device provides superior surge protection over current quad Zener MMQA series by providing up to 30 watts peak power. Features: SC-74 Package Allows Four Separate Unidirectional Configurations Peak Power 30 Watts 8 x 20 S ESD Rating of Class N (Exceeding 2 kv) per the Human Body Model ESD Rating: IEC (ESD) kv (air) 8 kv (contact) IEC (EFT) 40 A (/0 ns) IEC (lighting) 23 (8/20 s) UL Flammability Rating of 94V0 Typical Applications: Hand Held Portable Applications such as Cell Phones, Pagers, Notebooks and Notebook Computers MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation 8 x 20 T A = 2 C (Note.) Total Power Dissipation on FR T A = 2 C (Note 2.) Derate Above 2 C Thermal Resistance, JunctiontoAmbient Junction and Storage Temperature Range Lead Solder Temperature Maximum 0 Seconds Duration P pk 30 W P D 22.8 mw mw/ C R JA 6 C/W T J, T stg to +0 C T L 260 C. Nonrepetitive current pulse 8 x 20 S exponential decay waveform 2. FR =.0 x 0.7 x 0.62 in. This document contains information on a new product. Specifications and information herein are subject to change without notice. SC74 QUAD TRANSIENT VOLTAGE SUPPRESSOR 30 WATTS PEAK POWER VOLTS SC74 CASE 38F STYLE xxx d PIN ASSIGNMENT MARKING DIAGRAM xxx d = Device Code = Date Code ORDERING INFORMATION Device Package Shipping SMS0T SC /Tape & Reel SMS0T3 SC74 0,000/Tape & Reel Semiconductor Components Industries, LLC, 200 March, 200 Rev. 99 Publication Order Number: SMS0T/D

101 SMS0T I V C V BR V RWM I R IT V I PP ELECTRICAL CHARACTERISTICS Characteristic Symbol Min Typ Max Unit Reverse Breakdown I t =.0 ma V BR V Reverse Leakage V RWN =.0 Volts I R N/A 20 A Maximum Clamping I PP =.0 A, 8 x 20 S V C N/A 9.8 V Maximum Clamping I PP = 23 A, 8 x 20 S V C N/A. V Between I/O Pins and V R = 0 Volts,.0 MHz Capacitance pf 0 0 P PP, PEAK PULSE POWER (kw) 0. % OF RATED POWER OR I PP t p, PULSE DURATION (s) Figure. NonRepetitive Peak Pulse Power versus Pulse Time T A, AMBIENT TEMPERATURE ( C) Figure 2. Power Derating Curve 00

102 SMS0T 0 20 PERCENT OF I PP ct t d = I PP /2 WAVEFORM PARAMETERS t r = 8 s t d = 20 s V C, CLAMPING VOLTAGE (V) WAVEFORM PARAMETERS t r = 8 s t d = 20 s 8 X 20 s SURGE t, TIME (s) Figure 3. Pulse Waveform I PP, PEAK PULSE CURRENT (A) Figure 4. Clamping Voltage versus Peak Pulse Current 400 V F, FORWARD VOLTAGE (V) PULSE WAVEFORM t r = 8 s t d = 20 s 8 X 20 s SURGE C, CAPACITANCE (pf) T J = 2 C I F, FORWARD CURRENT (A) Figure. 8 x 20 s V F V R, REVERSE VOLTAGE (V) Figure 6. Typical Capacitance 0

103 This device is scheduled for availability in Q Please contact your nearest ON Semiconductor sales representative for further information. Features: 4 4 mm Lead Less MLF Surface Mount Package 9 EMI/RFI Bidirectional Pi LowPass Filters ESD Protection Meets IEC Watt Peak Pulse Power, 8 20 s (all diodes under power) Diode Capacitance: 7 0 pf Pi Filter Line Capacitance: 22 ±20% pf Low Zener Diode Leakage: A Maximum Zener Breakdown Voltage; 6 8 Volts Moisture Sensitivity Level Benefits: Suppresses EMI/RFI Noise in Systems Subjected to Electromagnetic Interference Small Package Size Minimizes Parasitic Inductance, Thus a More Ideal Low Pass Filtering Response Typical Applications: Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note.) 8 20 s Pulse IEC Air Discharge IEC Contact Discharge MIL STD 883C Method 306 P PK 0 Watts ESD ±2 ±8.0 ±6 Maximum Junction Temperature T J 0 C. All diodes under power kv IN GND IN 3 24 PIN MLF CASE 488 PLASTIC MARKING DIAGRAM ZMM7V ABC ZMM7V = Specific Device Code ABC = Date Code CIRCUIT DESCRIPTION USB/RS232 CELL OUT V CC OUT 3 LOW PASS FILTER IN 42 OUT 42 ORDERING INFORMATION Device Package Shipping NZMM7V0T4 24 PIN 4000/Tape & Reel Semiconductor Components Industries, LLC, 200 March, 200 Rev Publication Order Number: NZMM7V0T4/D

104 NZMM7V0T4 ELECTRICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit V Z Zener Breakdown I ZT = ma V I r Zener Leakage V R = 3 V N/A.0 A V F Zener Forward I F = 0 ma N/A.2 V Capacitance Zener Internal 0 V Bias pf Capacitance Zener/Resistor Array Line Capacitance pf Resistor Resistance 90 0 F C (Note 2.) Cutoff Frequency 220 MHz 2. 0 Source and 0 Lead Termination per Figure 2 Frequency Response Specification TRACKING GENERATOR SPECTRUM ANALYZER TG OUTPUT RF INPUT 0 NZMM7V 0 V G V in V out TEST BOARD NZMM7V Test Conditions: Source Impedance = 0 Load Impedance = 0 Input Power = 0 dbm Figure. Measurement Conditions Output: 3 db = 220 MHz f, FREQUENCY (MHz) 3000 Figure 2. Typical EMI Filter Response (0 Source and 0 Lead Termination) 03

105 NZMM7V0T4 Detailed Device Schematic NC Applications Information Suppressing Noise at the Source Filter all I/O signals leaving the noisy environment Locate I/O driver circuits close to the connector Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver Filter all I/O signals entering the unit Locate the I/O filters as close as possible to the connector Minimizing Noise Coupling Use multilayer PCBs to minimize power and ground inductance Keep clock circuits away from the I/O connector Ground planes should be used whenever possible Minimize the loop area for all high speed signals Provide for adequate power decoupling ESD Protection Locate the suppression devices as close to the I/O connector as possible Minimize the PCB trace length to the suppression device Minimize the PCB trace length for the ground return for the suppression device 04

106 Features: EMI/RFI Bidirectional Pi LowPass Filters ESD Protection Meets IEC600042, up to kv Air Discharge, or 8 kv Contact Discharge Diode Capacitance: 7 0 pf Zener/Resistor Line Capacitance: 22 ±20% pf Low Zener Diode Leakage: A Maximum Zener Breakdown Voltage; 6 8 Volts Benefits: Designed to suppress EMI/RFI Noise in Systems Subjected to Electromagnetic Interference Small Package Size Minimizes Parasitic Inductance, Thus a More Ideal Low Pass Filtering Response Typical Applications: Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note.) 8 20 s Pulse IEC Air Discharge IEC Contact Discharge MIL STD 883C Method 306 P PK TBD Watts ESD ±2 ±8.0 ±6 Maximum Junction Temperature T J 0 C. All diodes under power kv SC7 CASE 463 PLASTIC MARKING DIAGRAM TBD CIRCUIT DESCRIPTION 2 3 This document contains information on a new product. Specifications and information herein are subject to change without notice. ORDERING INFORMATION Device Package Shipping NZF220TT SC7 TBD Semiconductor Components Industries, LLC, 200 March, 200 Rev. 0 0 Publication Order Number: NZF220TT/D

107 NZF220TT ELECTRICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit V Z Zener Breakdown I ZT = ma V I r Zener Leakage V R = 3 V N/A.0 A V F Zener Forward I F = 0 ma N/A.2 V Capacitance Zener Internal 0 V Bias pf Capacitance Zener/Resistor Array Line Capacitance pf Resistor Resistance 90 0 F C (Note 2.) Cutoff Frequency 220 MHz 2. 0 Source and 0 Lead Termination per Figure 2 Applications Information Suppressing Noise at the Source Filter all I/O signals leaving the noisy environment Locate I/O driver circuits close to the connector Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver Filter all I/O signals entering the unit Locate the I/O filters as close as possible to the connector Minimizing Noise Coupling Use multilayer PCBs to minimize power and ground inductance Keep clock circuits away from the I/O connector Ground planes should be used whenever possible Minimize the loop area for all high speed signals Provide for adequate power decoupling ESD Protection Locate the suppression devices as close to the I/O connector as possible Minimize the PCB trace length to the suppression device Minimize the PCB trace length for the ground return for the suppression device 06

108 NZF220TT Frequency Response Specification TRACKING GENERATOR SPECTRUM ANALYZER TG OUTPUT RF INPUT 0 NZF220T 0 V G V in V out TEST BOARD NZF220T Test Conditions: Source Impedance = 0 Load Impedance = 0 Input Power = 0 db Figure. Measurement Conditions 6.3 OUTPUT 3 db = 220 MHz f, FREQUENCY (MHz) 3000 Figure 2. Typical EMI Filter Response (0 Source and 0 Lead Termination) 07

109 Features: 2 EMI/RFI Bidirectional Pi LowPass Filters ESD Protection Meets IEC600042, up to kv Air Discharge, or 8 kv Contact Discharge Diode Capacitance: 7 0 pf Zener/Resistor Line Capacitance: 22 ±20% pf Low Zener Diode Leakage: A Maximum Zener Breakdown Voltage; 6 8 Volts Benefits: Designed to suppress EMI/RFI Noise in Systems Subjected to Electromagnetic Interference Nominal Cutoff Frequency of 220 MHz (per Figure 2) Small Package Size Minimizes Parasitic Inductance, Thus a More Ideal Low Pass Filtering Response Typical Applications: Cellular Phones Communication Systems Computers Portable Products with Input/Output Conductors MAXIMUM RATINGS Rating Symbol Value Unit Peak Power Dissipation (Note.) 8 20 s Pulse IEC Air Discharge IEC Contact Discharge P PK TBD Watts ESD ± ±8.0 Maximum Junction Temperature T J 0 C. All diodes under power kv CIRCUIT DESCRIPTION Pin Pin 4 Pin Pin 2 Pin 3 (GND) 2 3 SC88A CASE 49A DF SUFFIX MARKING DIAGRAM TBD 4 4 This document contains information on a new product. Specifications and information herein are subject to change without notice. 2 3 ORDERING INFORMATION Device Package Shipping NZF220DFT SC88A 3000/Tape & Reel Semiconductor Components Industries, LLC, 200 March, 200 Rev. 08 Publication Order Number: NZF220DFT/D

110 NZF220DFT ELECTRICAL CHARACTERISTICS Symbol Characteristic Min Typ Max Unit V Z Zener Breakdown I ZT = ma V I r Zener Leakage V R = 3 V N/A.0 A V F Zener Forward I F = 0 ma N/A. V Capacitance Zener Internal 0 V Bias pf Capacitance Zener/Resistor Array Line Capacitance pf Resistor Resistance 90 0 F C (Note 2.) Cutoff Frequency 220 MHz 2. 0 Source and 0 Lead Termination per Figure 2 Applications Information Suppressing Noise at the Source Filter all I/O signals leaving the noisy environment Locate I/O driver circuits close to the connector Use the longest rise/fall times possible for all digital signals Reducing Noise at the Receiver Filter all I/O signals entering the unit Locate the I/O filters as close as possible to the connector Minimizing Noise Coupling Use multilayer PCBs to minimize power and ground inductance Keep clock circuits away from the I/O connector Ground planes should be used whenever possible Minimize the loop area for all high speed signals Provide for adequate power decoupling ESD Protection Locate the suppression devices as close to the I/O connector as possible Minimize the PCB trace length to the suppression device Minimize the PCB trace length for the ground return for the suppression device Frequency Response Specification TRACKING GENERATOR SPECTRUM ANALYZER TG OUTPUT RF INPUT 0 NZF220DF 0 V G V in V out TEST BOARD NZF220DF Test Conditions: Source Impedance = 0 Load Impedance = 0 Input Power = 0 db Figure. Measurement Conditions 09

111 NZF220DFT 6.3 OUTPUT 3 db = 220 MHz f, FREQUENCY (MHz) 3000 Figure 2. Typical EMI Filter Response (0 Source and 0 Lead Termination) Footprint 0. mm (min) 0.4 mm (min) ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ ÉÉÉ 0.6 mm 0.6 mm.9 mm 0

112 Preferred Devices High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakovertriggered crowbar protectors. Turnoff occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. High Surge Current Capability: 0 Amps 0 x 000 µsec; Guaranteed at the extended temp range of 20 C to 6 C in the SMA package The MMT0A230T3 Series is used to help equipment meet various regulatory requirements including: Telcordia 089, ITU K.20 & K.2, IEC 90 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in NonSemiconductor Devices FailSafe, Shorts When Overstressed, Preventing Continued Unprotected Operation. Surface Mount Technology (SMT) Device Marking: MMT0A230T3: TBD; MMT0A260T3: TBD; MMT0A30T3: TBD MAXIMUM RATINGS (T J = 2 C unless otherwise noted) Rating Symbol Value Unit OffState Voltage Maximum MMT0A230T3 MMT0A260T3 MMT0A30T3 Maximum Pulse Surge Short Circuit Current NonRepetitive Double Exponential Decay Waveform (Notes. and 2.) 0 x 000 µsec (20 C to +6 C) 8 x 20 µsec 0 x 60 µsec 0 x 60 µsec Maximum NonRepetitive Rate of Change of OnState Current Double Exponential Waveform, R =.0, L =. µh, C =.67 µf, I pk = 0A V DM I PPS I PPS2 I PPS3 I PPS Volts A(pk) di/dt 0 A/µs. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating. This document contains information on a new product. Specifications and information herein are subject to change without notice. BIDIRECTIONAL TSPD 0 AMP SURGE 26 thru 36 VOLTS MT ORDERING INFORMATION Device Package Shipping MMT0A230T3 SMA 2mm Tape and Reel (2.K/Reel) MMT0A260T3 SMA (No Polarity) CASE 403D MARKING DIAGRAM xxxx LLWW# SMA MT2 xxxx = Specific Device Code LL = Location Code WW = Work Week # = Die Fab Location 2mm Tape and Reel (2.K/Reel) MMT0A30T3 SMA 2mm Tape and Reel (2.K/Reel) Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 0 Publication Order Number: MMT0A230T3/D

113 MMT0A230T3, MMT0A260T3, MMT0A30T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T J 40 to +2 C Overload Junction Temperature Maximum Conducting State Only T J2 +7 C Instantaneous Peak Power Dissipation (I pk = 0A, 0x000 2 C) P PK 2000 W Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds T L 260 C ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Breakover Voltage (Both polarities) (dv/dt = 00 V/µs, I SC =.0 A, Vdc = 000 V) (+6 C) Characteristics Symbol Min Typ Max Unit MMT0A230T3 MMT0A260T3 MMT0A30T3 MMT0A230T3 MMT0A260T3 MMT0A30T3 Breakover Voltage (Both polarities) (f = 60 Hz, I SC =.0 A(rms), V OC = 000 V(rms), MMT0A230T3 R I =.0 kω, t = 0. cycle) (Note 3.) MMT0A260T3 MMT0A30T3 (+6 C) MMT0A230T3 MMT0A260T3 MMT0A30T3 V (BO) V (BO) Breakover Voltage Temperature Coefficient dv (BO) /dt J 0.08 %/ C Breakdown Voltage (I (BR) =.0 ma) Both polarities Off State Current (V D = 0 V) Both polarities Off State Current (V D2 = V DM ) Both polarities OnState Voltage (I T =.0 A) (PW 300 µs, Duty Cycle 2%) (Note 3.) Breakover Current (f = 60 Hz, V DM = 000 V(rms), R S =.0 kω) Both polarities MMT0A230T3 MMT0A260T3 MMT0A30T3 Holding Current (Both polarities) (Note 3.) V S = 00 Volts; I T (Initiating Current) =.0 Amp (+6 C) Critical Rate of Rise of OffState Voltage (Linear waveform, V D = Rated V BR, T J = 2 C) Capacitance (f =.0 MHz, 0 Vdc,.0 V rms Signal) Capacitance (f =.0 MHz, 2.0 Vdc, mv rms Signal) 3. Measured under pulse conditions to reduce heating. V (BR) I D I D Volts Volts Volts µa V T Volts I BO 230 ma I H ma dv/dt 2000 V/µs C O pf 2

114 MMT0A230T3, MMT0A260T3, MMT0A30T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol I D, I D2 V D, V D2 V BR V BO I BO I H V TM Parameter Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage I H V TM V (BO) I D ID2 V D V D2 V (BR) I (BO) + Voltage µ Figure. OffState Current versus Temperature Figure 2. Breakdown Voltage versus Temperature 3

115 MMT0A230T3, MMT0A260T3, MMT0A30T3 2 Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature Figure. Exponential Decay Pulse Waveform Figure 6. Peak Surge OnState Current versus Surge Current Duration, Sinusoidal Waveform 4

116 MMT0A230T3, MMT0A260T3, MMT0A30T3

117 MMT0A230T3, MMT0A260T3, MMT0A30T3 MINIMUM RECOMMENDED FOOTPRINT FOR SURFACE MOUNTED APPLICATIONS inches mm SMA 6

118 Preferred Devices High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakovertriggered crowbar protectors. Turnoff occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. High Surge Current Capability: 0 Amps 0 x 000 µsec Guaranteed at the extended temp range of 20 C to 6 C The MMT0B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 089, ITU K.20 & K.2, IEC 90, UL 49 & 90 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in NonSemiconductor Devices FailSafe, Shorts When Overstressed, Preventing Continued Unprotected Operation. Surface Mount Technology (SMT) Indicates UL Registered File #E60 Device Marking: MMT0B230T3: RPBF; MMT0B260T3: RPBG; MMT0B30T3: RPBJ, and Date Code MAXIMUM RATINGS (T J = 2 C unless otherwise noted) Rating Symbol Value Unit OffState Voltage Maximum MMT0B230T3 MMT0B260T3 MMT0B30T3 Maximum Pulse Surge Short Circuit Current NonRepetitive Double Exponential Decay Waveform (Notes. and 2.) 0 x 000 µsec (20 C to +6 C) 8 x 20 µsec 0 x 60 µsec 0 x 60 µsec Maximum NonRepetitive Rate of Change of OnState Current Double Exponential Waveform, R =.0, L =. µh, C =.67 µf, I pk = 0A V DM I PPS I PPS2 I PPS3 I PPS4. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating Volts A(pk) di/dt 0 A/µs BIDIRECTIONAL TSPD 0 AMP SURGE 26 thru 36 VOLTS MT ORDERING INFORMATION Device Package Shipping MMT0B230T3 SMB 2mm Tape and Reel (2.K/Reel) MMT0B260T3 SMB MT2 SMB (No Polarity) (Essentially JEDEC DO24AA) CASE 403C MARKING DIAGRAMS RPBx x Y WW YWW RPBx = Specific Device Code = F, G or J = Year = Work Week ( ) 2mm Tape and Reel (2.K/Reel) MMT0B30T3 SMB 2mm Tape and Reel (2.K/Reel) Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 7 Publication Order Number: MMT0B230T3/D

119 MMT0B230T3, MMT0B260T3, MMT0B30T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T J 40 to +2 C Overload Junction Temperature Maximum Conducting State Only T J2 +7 C Instantaneous Peak Power Dissipation (I pk = 0 A, 0x000 2 C) P PK 2000 W Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds T L 260 C ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Symbol Min Typ Max Unit Breakover Voltage (Both polarities) (dv/dt = 00 V/µs, I SC =.0 A, Vdc = 000 V) (+6 C) MMT0B230T3 MMT0B260T3 MMT0B30T3 MMT0B230T3 MMT0B260T3 MMT0B30T3 Breakover Voltage (Both polarities) (f = 60 Hz, I SC =.0 A(rms), V OC = 000 V(rms), MMT0B230T3 R I =.0 kω, t = 0. cycle) (Note 3.) MMT0B260T3 MMT0B30T3 (+6 C) MMT0B230T3 MMT0B260T3 MMT0B30T3 V (BO) V (BO) Breakover Voltage Temperature Coefficient dv (BO) /dt J 0.08 %/ C Breakdown Voltage (I (BR) =.0 ma) Both polarities Off State Current (V D = 0 V) Both polarities Off State Current (V D2 = V DM ) Both polarities OnState Voltage (I T =.0 A) (PW 300 µs, Duty Cycle 2%) (Note 3.) Breakover Current (f = 60 Hz, V DM = 000 V(rms), R S =.0 kω) Both polarities MMT0B230T3 MMT0B260T3 MMT0B30T3 Holding Current (Both polarities) (Note 3.) V S = 00 Volts; I T (Initiating Current) =.0 Amp (+6 C) Critical Rate of Rise of OffState Voltage (Linear waveform, V D = Rated V BR, T J = 2 C) Capacitance (f =.0 MHz, 0 Vdc,.0 V rms Signal) Capacitance (f =.0 MHz, 2.0 Vdc, mv rms Signal) 3. Measured under pulse conditions to reduce heating. V (BR) I D I D Volts Volts Volts µa V T Volts I BO 230 ma I H ma dv/dt 2000 V/µs C O pf 8

120 MMT0B230T3, MMT0B260T3, MMT0B30T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol I D, I D2 V D, V D2 V BR V BO I BO I H V TM Parameter Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage I H V TM V (BO) I D ID2 V D V D2 V (BR) I (BO) + Voltage µ Figure. OffState Current versus Temperature Figure 2. Breakdown Voltage versus Temperature 9

121 MMT0B230T3, MMT0B260T3, MMT0B30T3 2 Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature Figure. Exponential Decay Pulse Waveform Figure 6. Peak Surge OnState Current versus Surge Current Duration, Sinusoidal Waveform 20

122 MMT0B230T3, MMT0B260T3, MMT0B30T3 2

123 Preferred Device High Voltage Bidirectional TSPD These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakovertriggered crowbar protectors. Turnoff occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises. Outstanding High Surge Current Capability: 00 Amps 0x000 µsec Guaranteed at the extended temp range of 20 C to 6 C The MMT0B230T3 Series is used to help equipment meet various regulatory requirements including: Bellcore 089, ITU K.20 & K.2, IEC 90, UL 49 & 90 and FCC Part 68. Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in NonSemiconductor Devices FailSafe, Shorts When Overstressed, Preventing Continued Unprotected Operation. Surface Mount Technology (SMT) Complies with GR089 Second Level Surge Spec at 00 Amps 2x0 µsec Waveforms Indicates UL Registered File #E60 Device Marking: MMT0B230T3: RPDF; MMT0B260T3: RPDG; MMT0B30T3: RPDJ, and Date Code MAXIMUM RATINGS (T J = 2 C unless otherwise noted) Rating Symbol Value Unit OffState Voltage Maximum MMT0B230T3 MMT0B260T3 MMT0B30T3 Maximum Pulse Surge Short Circuit Current NonRepetitive Double Exponential Decay Waveform (Notes. and 2.) 0 x 000 µsec (20 C to +6 C) 2 x 0 µsec 0 x 700 µsec Maximum NonRepetitive Rate of Change of OnState Current Double Exponential Waveform, R = 2.0, L =. µh, C =.67 µf, I pk = 0A V DM I PPS I PPS2 I PPS3. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating Volts A(pk) di/dt 00 A/µs BIDIRECTIONAL TSPD 00 AMP SURGE 26 thru 36 VOLTS MT ORDERING INFORMATION Device Package Shipping MMT0B230T3 SMB 2mm Tape and Reel (2.K/Reel) MMT0B260T3 SMB MT2 SMB (No Polarity) (Essentially JEDEC DO24AA) CASE 403C MARKING DIAGRAMS RPDx x Y WW YWW RPDx = Specific Device Code = F, G or J = Year = Work Week ( ) 2mm Tape and Reel (2.K/Reel) MMT0B30T3 SMB 2mm Tape and Reel (2.K/Reel) Preferred devices are recommended choices for future use and best overall value. Semiconductor Components Industries, LLC, 200 March, 200 Rev. 22 Publication Order Number: MMT0B230T3/D

124 MMT0B230T3, MMT0B260T3, MMT0B30T3 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Operating Temperature Range Blocking or Conducting State T J 40 to +2 C Overload Junction Temperature Maximum Conducting State Only T J2 +7 C Instantaneous Peak Power Dissipation (I pk = 00 A, 0x000 2 C) P PK 4000 W Maximum Lead Temperature for Soldering Purposes /8 from Case for 0 Seconds T L 260 C ELECTRICAL CHARACTERISTICS (T J = 2 C unless otherwise noted) Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Breakover Voltage (Both polarities) (dv/dt = 00 V/µs, I SC =.0 A, Vdc = 000 V) (+6 C) Characteristic Symbol Min Typ Max Unit MMT0B230T3 MMT0B260T3 MMT0B30T3 MMT0B230T3 MMT0B260T3 MMT0B30T3 Breakover Voltage (Both polarities) (f = 60 Hz, I SC =.0 A(rms), V OC = 000 V(rms), MMT0B230T3 R I =.0 kω, t = 0. cycle) (Note 3.) MMT0B260T3 MMT0B30T3 (+6 C) MMT0B230T3 MMT0B260T3 MMT0B30T3 V (BO) V (BO) Breakover Voltage Temperature Coefficient dv (BO) /dt J 0.08 %/ C Breakdown Voltage (I (BR) =.0 ma) Both polarities Off State Current (V D = 0 V) Both polarities Off State Current (V D2 = V DM ) Both polarities OnState Voltage (I T =.0 A) (PW 300 µs, Duty Cycle 2%) (Note 3.) MMT0B230T3 MMT0B260T3 MMT0B30T3 Breakover Current (f = 60 Hz, V DM = 000 V(rms), R S =.0 kω) Both polarities Holding Current (Both polarities) (Note 3.) V S = 00 Volts; I T (Initiating Current) =.0 A (+6 C) Critical Rate of Rise of OffState Voltage (Linear waveform, V D = Rated V BR, T J = 2 C) Capacitance (f =.0 MHz, 0 Vdc,.0 V rms Signal) Capacitance (f =.0 MHz, 2.0 Vdc, mv rms Signal) 3. Measured under pulse conditions to reduce heating. V (BR) I D I D Volts Volts Volts µa V T.3.0 Volts I BO 260 ma I H ma dv/dt 2000 V/µs C O pf 23

125 MMT0B230T3, MMT0B260T3, MMT0B30T3 Voltage Current Characteristic of TSPD (Bidirectional Device) + Current Symbol I D, I D2 V D, V D2 V BR V BO I BO I H V TM Parameter Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage I H V TM V (BO) I D ID2 V D V D2 V (BR) I (BO) + Voltage 24

126 MMT0B230T3, MMT0B260T3, MMT0B30T3 µ Figure. OffState Current versus Temperature Figure 2. Breakdown Voltage versus Temperature Figure 3. Breakover Voltage versus Temperature Figure 4. Holding Current versus Temperature Figure. Exponential Decay Pulse Waveform Figure 6. Peak Surge OnState Current versus Surge Current Duration, Sinusoidal Waveform 2

127 MMT0B230T3, MMT0B260T3, MMT0B30T3 26

128 Package Outline Dimensions SURMETIC 40 CASE 702 ISSUE C B D F 2 K A K F MOSORB CASE 4A02 ISSUE A B D P P K A K 27

129 Package Outline Dimensions (continued) MINI MOSORB CASE 904 ISSUE M B K A D K V D A L G H B S C K SOT23 CASE 3808 ISSUE AF J 28

130 Package Outline Dimensions (continued) S L A B SC74 CASE 38F02 ISSUE C G H D C K J M SMC CASE ISSUE B S A D B C K P J H 29

131 Package Outline Dimensions (continued) SMB CASE 403A03 ISSUE D S A D B inches mm SMB Footprint K P J H C SMA CASE 403B0 ISSUE O S A D B inches mm SMA C K J H 30

132 Package Outline Dimensions (continued) SMB CASE 403C0 ISSUE O S A D B C K P J H 3

133 Package Outline Dimensions (continued) A SC88A (SOT323) CASE 49A0 ISSUE E G V S B D PL N C J H K 0. mm (min) 0.4 mm (min) ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ ÉÉ 0.6 mm 0.6 mm.9 mm 32

134 Package Outline Dimensions (continued) POWERMITE CASE 4704 ISSUE D A S C J F K R B J H T L D TERM. TERM. 2 SC7/SOT46 CASE 4630 ISSUE B S D 3 PL J A G B K C L H 33

135 Package Outline Dimensions (continued) 24 PIN MLF CASE 4880 ISSUE O 2 PL X A H F P PL Q NOTE & PL 2 PL AF 4 PL T M AG 4 PL AE 4 PL 7 2 AB V AD 8 R E 3 AA K Z W N B Y C NOTE 7 L AF 4 PL D NOTE 4 G 34

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