egan FET Wireless Energy Transfer Solutions Efficient Power Conversion Corporation
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- Egbert Bridges
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1 The egan FET Journey Continues egan FET Wireless Energy Transfer Solutions Efficient Power Conversion Corporation 1
2 Agenda Wireless Power Topologies Overview Wireless Power Results for each Topology Summary 2
3 Overview Output Power < 30 W Loosely coupled, 6.78 MHz (ISM band) based on A4WP standard Topologies Reviewed Class D (Current and Voltage Mode) Class E ZVS Voltage Mode Class D 3 3
4 Wireless Coil-set Overview Simplified representation of coil-set for easy comparison between topologies C devs L devs L src L dev C devp C out R DCload Z load Coil Set 4
5 Experimental Setup Coil Feedback egan FETs RF connection Device Coil Device Board 25mm 50mm Source Board Source Coil RF connection 5
6 Traditional Voltage Mode Class D Switch voltage rating = Supply (V DD ). Level shifting gate driver required. C OSS plays an important role in losses. + V DD Q 2 L mat C s V / I V DD V DS I D Q 1 C mat Z load 50% time Ideal Waveforms 6
7 Voltage Mode Class D Efficiency Efficiency [%] MHz, 23.6 Ω load EPC8004 EPC2014 MOSFET Output Power [W] 7
8 Voltage Mode Class D Load Effect Efficiency [%] MHz, Fixed 14V supply EPC 2014 Efficiency Power DC Load Resistance [Ω] Output Power [W] 8
9 Current Mode Class D EPC2012 has lower FoM than MOSFET C OSS is absorbed into matching network. V DD V / I L CK1 C pt L CK2 + π x V DD L pt V DS I D Q 1 Q 2 C sp Z load 50% time Ideal Waveforms 9 9
10 Current Mode Class D Efficiency Efficiency [%] MHz, 23.6 Ω Load EPC egan FET MOSFET Output Power [W] 10
11 Current Mode Class D Load Effect 78.0 Fixed 5.5 V supply Efficiency [%] EPC 2012 Efficiency Power Output Power [W] DC Load Resistance [Ω] 11
12 Class E Overview Switch voltage rating = > 3.56 Supply (V DD ). C OSS absorbed into matching network. V DD V / I + L RFck L e C s 3.56 x V DD V DS Q 1 C sh I D Z load 50% Ideal Waveforms time 12
13 Class E Efficiency as Function of Load Efficiency [%] 6.78 MHz, 20.5 Ω Load EPC Output Power [W] egan FET MOSFET 13
14 Class E Load Effect 6.78 MHz, Fixed 20 V supply Efficiency [%] Efficiency EPC 2012 Power Output Power [W] DC Load Resistance [Ω] 14
15 Class E Thermal Performance NO HEAT-SINK 30 W, 20.2 Ω Load LM5113TM EPC
16 Class E egan FET vs. MOSFET P FET [mw] Total FET Power losses FDMC86248 EPC Load Power [W] 16
17 ZVS Voltage Mode Class D C OSS Voltage is transitioned by the ZVS tank Lower egan FET C OSS leads to higher available duty cycle Highest system efficiency Q 1 C sp + V DD V / I V DD L m V DS I D Q 2 C m Z load ZVS tank 50% time Ideal Waveforms 17
18 ZVS Voltage Mode Class D Efficiency Efficiency [%] EPC Ω load 23.6 Ω load Output Power [W] 18
19 ZVS Voltage Mode Class D Load Effect 81 Fixed 26 V supply Efficiency [%] EPC 2007 Efficiency Power Output Power [W] DC Load Resistance [Ω]
20 ZVS Class D Thermal Performance NO HEAT-SINK R DCLoad = 35 Ω, V in = 42 V, P out = 35 W, f = 6.78 MHz LM5113TM EPC
21 ZVS Class D FoM Comparison FOM [nc mω] EPC2007 Q OSS R DS(on) Qoss RDS(on) QG RDS(on) Q G R DS(on) BV DSS = 100 V Q OSS = 8.9 nc at 40 V Q G = 2.1 nc at 5 V R DS(on) = 24 mω FDMC8622 BV DSS = 100 V Q OSS = 7.3 nc at 40 V Q G = 5.2 nc at 10 V R DS(on) = 43.7 mω 21
22 ZVS Class D egan FET vs. MOSFET P FET [mw] Total FET Power losses FDMC EPC Load Power [W] 22
23 Summary of Efficiency Results Efficiency [%] MHz, 23.6 Ω Load, egan FET EPC 2014 EPC Output Power [W] EPC 2012 EPC 2007 ZVS-CD SE-CE CM-CD VM-CD 23
24 Simulated FET Losses All Topologies Per FET Power loss [mw] 800 Exceeds thermal capability of FET Fixed Supply Voltage W ZVS-CD SE-CE CM-CD VM-CD DC Load Resistance [Ω] 24
25 Summary Wireless Power Transmission is one of the largest potential markets for power transistors. ZVS Class D shows great promise for a simple, low cost, and high efficiency topology for wireless power. egan FETs enable greater duty cycle and higher efficiency. egan FETs enable the highest efficiency in all topologies using 6.78 MHz and MHz frequencies. egan technology is disruptive. 25
26 The end of the road for silicon.. is the beginning of the egan FET journey! 26
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PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 7.4A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 7N60 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low
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Applications l High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems. l Lead-Free Benefits l Very Low R DS(on) at 4.5V V GS l Low Gate Charge l Fully
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SFG170N10xF_Datasheet Enhancement Mode N-Channel Power MOSFET Features Low RDS(on) & FOM Extremely low switching loss Excellent stability and uniformity Fast switching and soft recovery Applications Consumer
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HCA80R250T 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More information10V Drive Nch MOSFET. Data Sheet RSJ400N06. 1/ Rev.A. Dimensions (Unit : mm) Structure Silicon N-channel MOSFET
V Drive Nch MOSFET RSJ400N06 Structure Silicon N-channel MOSFET Dimensions (Unit : mm) LPTS. 4.5.3 Features ) Low on-resistance. 2) High current 3) High power Package 3. 3.0 9.0.0.24 2.54 5.08 0.78 0.4
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AN2170 APPLICATION NOTE MOSFET Device Effects on Phase Node Ringing in VRM Power Converters INTRODUCTION The growth in production volume of industrial equipment (e.g., power DC-DC converters devoted to
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 8205A HM8205A TSSOP-8 Ø330mm 12mm 3000 units. Parameter Symbol Limit Unit
Dual N-Channel Enhancement Mode Power MOSFET Description The HM8205A uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This
More informationDevice Marking Device Device Package Reel Size Tape width Quantity SIP3210 SIP3210 SOP-8 330mm
SIAI N-Channel Enhancement Mode Power MOSFET DESCRIPTION The SIP3210 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationV DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD - 97436 IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC
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UNISONIC TECHNOLOGIES CO., LTD UTT50P04-40V, -50A P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT50P04 is a P-channel power MOSFET using UTC s advanced technology to provide the customers with high switching
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UNISONIC TECHNOLOGIES CO., LTD 171A, 150V N-CHANNEL ENHANCEMENT MODE TRENCH POWER MOSFET POWER MOSFET DESCRIPTION The UTC is a N-channel enhancement mode power MOSFET using UTC s advanced technology to
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
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