EPC2015 Enhancement Mode Power Transistor
|
|
- Randall Curtis
- 6 years ago
- Views:
Transcription
1 EPC5 EPC5 Enhancement Mode Power Transistor V DSS, 4 V R DS(ON), 4 mw I D, A PRELIMINARY EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure that has been developed over the last 55 years. GaN s exceptionally high electron mobility and low temperature coefficient allows very low R DS(ON), while its lateral device structure and majority carrier diode provide exceptionally low Q G and zero Q RR. The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate. Maximum Ratings V DS Drain-to-Source Voltage 4 V Continuous (T A = 5 C, θ JA = ) I D Pulsed (5 C, Tpulse = µs) 5 Gate-to-Source Voltage 6 V GS Gate-to-Source Voltage -5 T J Operating Temperature -4 to 5 T STG Storage Temperature -4 to 5 A V C EPC5 egan FETs are supplied only in passivated die form with solder bars Applications High Speed DC-DC conversion Class D Audio Hard Switched and High Frequency Circuits Benefits Ultra High Efficiency Ultra Low R DS(on) Ultra low Q G Ultra small footprint PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Static Characteristics (T J = 5 C unless otherwise stated) BV DSS Drain-to-Source Voltage V GS = V, I D = 5 µa 4 V I DSS Drain Source Leakage V DS = V, V GS = V 4 µa Gate-Source Forward Leakage V GS = 5 V.5 7 I GSS Gate-Source Reverse Leakage V GS = -5 V..5 ma V GS(TH) Gate Threshold Voltage V DS = V GS, I D = 9 ma V R DS(ON) Drain-Source On Resistance V GS = 5 V,. 4 mω Source-Drain Characteristics (T J = 5 C unless otherwise stated) V SD I S =.5 A, V GS = V, T = 5 C Source-Drain Forward Voltage I S =.5 A, V GS = V, T = 5 C All measurements were done with substrate shorted to source V Thermal Characteristics TYP R θjc Thermal Resistance, Junction to Case.6 C/W R θjb Thermal Resistance, Junction to Board 5 C/W R θja Thermal Resistance, Junction to Ambient (Note ) 54 C/W Note : R θja is determined with the device mounted on one square inch of copper pad, single layer oz copper on FR4 board. See for details. EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
2 EPC5 PARAMETER TEST CONDITIONS MIN TYP MAX UNIT Dynamic Characteristics (T J = 5 C unless otherwise stated) C ISS C OSS C RSS Q G Total Gate Charge (V GS = 5 V).5.6 Q GD Q GS Q OSS Q RR Input Capacitance Output Capacitance V DS = V, V GS = V Reverse Transfer Capacitance 6 7 Gate to Drain Charge..7 Gate to Source Charge V DS = V,.5 Output Charge 8.5 Source-Drain Recovery Charge All measurements were done with substrate shorted to source. pf nc ID Drain Current (A) 5 5 Figure : Typical Output Characteristics V GS = 5 V GS = 4 V = GS V GS = ID Drain Current (A) 5 5 Figure : Transfer Characteristics 5 C 5 C V DS = V.5.5 V DS Drain to Source Voltage (V) RDS(ON) Drain to Source Resistance (mω) Figure : R DS(on) vs V GS for Various Current I D = A I D = A I D = 5 A I D = A RDS(ON) Drain to Source Resistance (mω) 5 5 Figure 4: R DS(on) vs V GS for Various Temperature 5 C 5 C V GS Gate to Source Voltage (V) EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
3 EPC5 C Capacitance (nf) Figure 5: Capacitance C OSS = C GD + C SD C ISS = C GD + C GS C RSS = C GD VG Gate to Source Voltage (V) Figure 6: Gate Charge V D = V V DS Drain to Source Voltage (V) Q G Gate Charge (nc) ISD Source to Drain Current (A) 5 5 Figure 7: Reverse Drain-Source Characteristics 5 C 5 C Normalized On-State Resistance RDS(ON) Figure 8: Normalized On Resistance Vs Temperature V GS = 5 V V SD Source to Drain Voltage (V) T J Junction Temperature ( C ) Normalized Threshold Voltage Figure 9: Normalized Threshold Voltage vs. Temperature I D = 9 ma IG Gate Current (A) Figure : Gate Current 5 C 5 C T J Junction Temperature ( C ) EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE
4 EPC5 Figure : Transient Thermal Response Curve ZθJB, Normalized Thermal Impedance, C/Watt Duty Factors: Normalized Maximum Transient Thermal Impedance P DM t.. Single Pulse Notes: Duty Factor: D = t /t Peak T J = P DM x Z θjb x R θjb + T B t t p, Rectangular Pulse Duration, seconds TAPE AND REEL CONFIGURATION 4mm pitch, mm wide tape on 7 reel b d e f g Loaded Tape Feed Direction 7 reel a c Die orientation dot Gate solder bar is under this corner EPC5 (note ) Dimension (mm) target min max a..7. b c (note ) d e f (note ) g Die is placed into pocket solder bar side down (face side down) Note : MSL (moisture sensitivity level ) classified according to IPC/JEDEC industry standard. Note : Pocket position is relative to the sprocket hole measured as true position of the pocket, not the pocket hole. DIE MARKINGS 5 Die orientation dot Gate Pad solder bar is under this corner YYYY ZZZZ Part Number Part # Marking Line Laser Markings Lot_Date Code Marking line Lot_Date Code Marking Line EPC5 5 YYYY ZZZZ EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 4
5 EPC5 DIE OUTLINE Solder Bar View c d X f A f X B DIM MICROMETERS MIN Nominal MAX A B c d e f 95 5 g e g (685) 85 Max g X8 Side View +/- SEATING PLANE RECOMMENDED LAND PATTERN (units in µm) Pad no. is Gate; Pads no., 5, 7, 9, are Drain; Pads no. 4, 6, 8, are Source; Pad no. is Substrate. Information subject to change without notice. Revised March, EPC EFFICIENT POWER CONVERSION CORPORATION COPYRIGHT PAGE 5
EPC2014 Enhancement Mode Power Transistor
EPC4 EPC4 Enhancement Mode Power Transistor V DSS, V R DS(ON), 6 mw I D, A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment
More informationEPC2007C Enhancement Mode Power Transistor
EPC7C EPC7C Enhancement Mode Power Transistor V DSS, V R DS(on), 3 mw I D, 6 A NEW PRODUCT EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment
More informationEPC2016C Enhancement Mode Power Transistor
EPC6C EPC6C Enhancement Mode Power Transistor V DSS, V R DS(on), 6 mω I D, 8 A G D S EFFICIENT POWER CONVERSION HAL Gallium Nitride s exceptionally high electron mobility and low temperature coefficient
More informationEPC8004 Enhancement Mode Power Transistor
Enhancement Mode Power Transistor, V R DS(on), mω, A G D S EFFICIENT POWER CONVERSION HAL Gallium Nitride is grown on Silicon Wafers and processed using standard CMOS equipment leveraging the infrastructure
More informationEPC2107 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap
EPC7 Enhancement-Mode GaN Power Transistor Half-Bridge with Integrated Synchronous Bootstrap V DSS, V R DS(on), 9 m I D,.7 A EFFICIENT POWER CONVERSION HAL EPC7 Gallium Nitride is grown on Silicon Wafers
More informationMDS9652E Complementary N-P Channel Trench MOSFET
MDS9E Complementary N-P Channel Trench MOSFET MDS9E Complementary N-P Channel Trench MOSFET General Description The MDS9E uses advanced MagnaChip s MOSFET Technology to provide low on-state resistance,
More informationUNISONIC TECHNOLOGIES CO., LTD UT4411
UNISONIC TECHNOLOGIES CO., LTD UT4411 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4411 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationAO3408 N-Channel Enhancement Mode Field Effect Transistor
August 2 AO348 N-Channel Enhancement Mode Field Effect Transistor General Description The AO348 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationAO3401 P-Channel Enhancement Mode Field Effect Transistor
July 2 AO34 P-Channel Enhancement Mode Field Effect Transistor General Description The AO34 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages
More informationUNISONIC TECHNOLOGIES CO., LTD UT4413
UNISONIC TECHNOLOGIES CO., LTD UT4413 P-CHANNEL ENHANCEMENT MODE DESCRIPTION The UT4413 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationAO6801 Dual P-Channel Enhancement Mode Field Effect Transistor
May 22 AO68 Dual P-Channel Enhancement Mode Field Effect Transistor General Description The AO68 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. This device is suitable
More informationSecond Generation egan FETs are Lead Free and Offer Improved Performance Alex Lidow, CEO, Efficient Power Conversion Corporation
Second Generation egan FETs are Lead Free and Offer Improved Performance Alex Lidow, CEO, Efficient Power Conversion Corporation EFFICIENT POWER CONVERSION Since March, 11 Efficient Power Conversion Corporation
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 20 V V GS Gate-Source Voltage ±10 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationSSF6014D 60V N-Channel MOSFET
Main Product Characteristics V DSS 60V R DS(on) 12mΩ(typ.) I D 60A Features and Benefits TO-252 (DPAK) Marki ng and P i n Assignment S c h e m a ti c Dia g r a m Advanced trench MOSFET process technology
More informationUNISONIC TECHNOLOGIES CO., LTD UT6401
UNISONIC TECHNOLOGIES CO., LTD UT64 5A, 3V P-CHANNEL ENHANCEMENT MODE 3 DESCRIPTION The UTC UT64 is P-channel enhancement mode Power MOSFET, designed with high density cell, with fast switching speed,
More informationUNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET
UNISONIC TECHNOLOGIES CO., LTD UF7476 Preliminary POWER MOSFET N-CHANNEL POWER MOSFET DESCRIPTION The UTC UF7476 is a N-channel Power MOSFET, it uses UTC s advanced technology to provide the customers
More informationWPM2005 Power MOSFET and Schottky Diode
WPM5 Power MOSFET and Schottky Diode Features Featuring a MOSFET and Schottky Diode Independent Pinout to each Device to Ease Circuit Design Ultra Low V F Schottky Applications Li--Ion Battery Charging
More informationUNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET
UNISONIC TECHNOLOGIES CO., LTD UTT4815 Preliminary Power MOSFET 8 Amps, -30 Volts P-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT4815 is a P-channel enhancement mode power MOSFET using UTC s advanced trench
More informationWPM3028 WPM3028. Descriptions. Features. Applications. Order information. Typical R DS(on) (mω) V GS =-10V V GS =-5V -30
WPM32 WPM32 Single P-Channel, -3V, -11.5A, Power MOSFET Http://www.sh-willsemi.com V DS (V) Typical R DS(on) (mω) -3 11@ =-1V 15 @ =-5V S S S G Descriptions The WPM32 is P-Channel enhancement MOS Field
More informationS2 6 1 S1 3 D2 2 G1. Pin configuration (Top view) Parameter Symbol 10 S Steady State Unit Drain-Source Voltage V DS +20 Gate-Source Voltage V GS 6
Descriptions Features and Applications The SOT-363 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS (ON) with low gate charge.
More informationAOL1422 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is ESD protected and
More informationUNISONIC TECHNOLOGIES CO., LTD UTT6N10Z
UNISONIC TECHNOLOGIES CO., LTD UTT6NZ 6A, V N-CHANNEL POWER MOSFET DESCRIPTION The UTC UTT6NZ is a N-channel enhancement mode Power FET, it uses UTC s advanced technology to provide customers a minimum
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD P-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with low gate voltages.
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 650 V V GS Gate-Source Voltage ±30 V
General Description These N-Channel enhancement mode power field effect transistors are using Super Junction technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage 60 V V GS Gate-Source Voltage ±20 V
General Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationN-Channel Power MOSFET 40V, 121A, 3.3mΩ
TSM33NB4LCR N-Channel Power MOSFET 4V, 2A, 3.3mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested. 75 C Operating Junction Temperature
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationAOD405 P-Channel Enhancement Mode Field Effect Transistor
Jan 4 P-Channel Enhancement Mode Field Effect Transistor General Description The uses advanced trench technology to provide excellent R DS(ON), low gate chargeand low gate resistance. With the excellent
More informationN-Channel Power MOSFET 30V, 185A, 1.8mΩ
TSM8NA3CR N-Channel Power MOSFET 3V, 85A,.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationFeatures. Symbol Parameter Rating Units V DS Drain-Source Voltage V V GS Gate-Source Voltage ±8 ±8 V
General Description These N+P dual Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance,
More informationAOD436 N-Channel Enhancement Mode Field Effect Transistor
N-Channel Enhancement Mode Field Effect Transistor General Description The AOD436 uses advanced trench technology to provide excellent R DS(ON), low gate charge and low gate resistance. This device is
More informationTaiwan Goodark Technology Co.,Ltd TGD0103M
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationMDD1902 Single N-channel Trench MOSFET 100V, 40A, 28mΩ
MDD192 Single N-Channel Trench MOSFET V MDD192 Single N-channel Trench MOSFET V, 4A, 28mΩ General Description Features The MDD192 uses advanced MagnaChip s MOSFET Technology, which provides high performance
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationN-Channel Power MOSFET 100V, 46A, 16mΩ
TSM6NLCR N-Channel Power MOSFET V, 46A, 6mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationLinear Derating Factor 17 mw/ C V GS Gate-to-Source Voltage ± 12 V T J, T STG Junction and Storage Temperature Range -55 to C
l Ultra Low R DS(on) per Footprint Area l Low Thermal Resistance l P-Channel MOSFET l One-third Footprint of SOT-23 l Super Low Profile (
More informationLNTR4003NLT1G. Small Signal MOSFET. 30 V, 0.56 A, Single, N Channel, Gate ESD Protection, SOT-23 LESHAN RADIO COMPANY, LTD. 1/5. and halogen free.
Small Signal MOSFET V,.56 A, Single, N Channel, Gate ESD Protection, SOT- Features Low Gate Voltage Threshold(Vgs(th))to Facilitate Drive Circuit Design Low Gate Charge for Fast Switching ESD Protected
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 2V, 9A N-CHANNEL POWER MOSFET DESCRIPTION The N-Channel enhancement mode silicon gate power MOSFET is designed for high voltage, high speed power switching applications such
More informationPJM8205DNSG Dual N Enhancement Field Effect Transistor
DESCRIPTIONS The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection
More informationSSG4503 N-Ch: 6.9A, 30V, R DS(ON) 25 mω P-Ch: -6.3A, -30V, R DS(ON) 36 mω N & P-Ch Enhancement Mode Power MOSFET
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationN-Channel Power MOSFET 150V, 1.4A, 480mΩ
TSM48N5CX6 N-Channel Power MOSFET 5V,.4A, 48mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching Compliant to RoHS directive /65/EU and in accordance to WEEE
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD N-CHANNEL ENHANCEMENT MODE POWER MOSFET DESCRIPTION The UTC 25N10 is an N-channel enhancement mode power MOSFET and it uses UTC s perfect technology to provide designers
More informationN- and P-Channel 60V (D-S) Power MOSFET
TSM652CR N- and P-Channel 6V (D-S) Power MOSFET FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationGate-Body Leakage Current I GSS V GS =±20V,V DS =0V - - ±100 na (Note 3) On Characteristics Gate Threshold Voltage V GS(th) V DS =V GS,I D =250μA 1.2
N-Channel Enhancement Mode Power MOSFET Description The HM5N06 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationHCD80R1K4E 800V N-Channel Super Junction MOSFET
HCD80R1K4E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationSSF2341E. Main Product Characteristics V DSS -20V. R DS(on) 37mΩ (typ.) I D. Features and Benefit. Description
Main Product Characteristics V DSS -20V R DS(on) 37mΩ (typ.) I D -4A 1 SOT-23 Marking and Pin A s s i gnm e nt Schematic Diagram Features and Benefit Advanced MOSFET process technology Ideal for PWM, load
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6A, 6V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N6 is N-channel enhancement mode power field effect transistors with stable off-state characteristics, fast switching speed,
More informationUNISONIC TECHNOLOGIES CO., LTD UT4422
UNISONIC TECHNOLOGIES CO., LTD UT4422 N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR DESCRIPTION The UT4422 uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationN-Channel Power MOSFET 600V, 18A, 0.19Ω
N-Channel Power MOSFET 600V, 18A, 0.19Ω FEATURES Super-Junction technology High performance, small R DS(ON) *Q g figure of merit (FOM) High ruggedness performance 100% UIS & R g tested High commutation
More informationSSF6602. Main Product Characteristics. Features and Benefits. Description. Absolute Maximum Ratings (T A =25 C unless otherwise specified)
Main Product Characteristics D2 S1 V (BR)DSS 30V -30V D1 58mΩ@10V 100mΩ@-10V G2 R DS(on)MAX 95mΩ@4.5V 150mΩ@-4.5V G1 S2 I D 3.5A -2.7A SOT-23-6L Schematic Diagram Features and Benefits Advanced MOSFET
More informationN-Channel Power MOSFET 30V, 78A, 3.8mΩ
TSM38N3PQ33 N-Channel Power MOSFET 3V, 78A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and
More informationDevice Marking Device Device Package Reel Size Tape width Quantity TO-252-2L. Parameter Symbol Limit Unit
HM80N05K N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationIRF7328PbF. HEXFET Power MOSFET V DSS R DS(on) max I D
lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD - 9596A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A
More informationP-Channel Enhancement Mode Power MOSFET
DESCRIPTION The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a load switch or in PWM
More informationMDF11N60 N-Channel MOSFET 600V, 11 A, 0.55Ω
General Description MDF11N6 is suitable device for SMPS, high Speed switching and general purpose applications. MDF11N6 N-Channel MOSFET 6V, 11 A,.55Ω Features = 6V = 11A @ V GS = V R DS(ON).55Ω @ V GS
More informationWPM3407 WPM3407. Description. Features. Application. Order information V (BR)DSS. R DS(on) Typ V V 30 V
WPM347 Single P-Channel, Description -3 V, -4.4A,Power MOSFET The WPM347 uses advanced trench technology to provide excellent R DS(ON) with low gate charge. This device is suitable for use in DC-DC conversion
More informationIRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationP-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package. Order code V DS R DS(on) max I D
Datasheet P-channel -30 V, 12 mω typ., -9 A STripFET H6 Power MOSFET in a PowerFLAT 3.3x3.3 package Features Order code V DS R DS(on) max I D STL9P3LLH6-30 V 15 mω -9 A Very low on-resistance Very low
More informationFDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description
FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 6.5 Amps, 00 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 6N0 is an N-Channel enhancement mode power FET providing customers with excellent switching performance and
More informationUNISONIC TECHNOLOGIES CO., LTD UTD408
UNISONIC TECHNOLOGIES CO., LTD UTD408 N-CHANNEL ENHANCEMENT MODE FEATURES * R DS(ON) < 18 mω @ V GS =10V, I D =18A R DS(ON) < 27 mω @ V GS =4.5V, I D =10A * Low capacitance * Optimized gate charge * Fast
More informationN-Channel Power MOSFET 150V, 9A, 65mΩ
TSM65N5CS N-Channel Power MOSFET 5V, 9A, 65mΩ FEATURES Low R DS(ON) to minimize conductive losses Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU and in
More informationSSG4504 N & P-Ch Enhancement Mode Power MOSFET N-Ch: 7.2 A, 40 V, R DS(ON) 30 mω P-Ch: -6.5A, -40 V, R DS(ON) 40 mω
RoHS Compliant Product A suffix of -C specifies halogen & lead-free DESCRIPTION The is the highest performance trench N-ch and P-ch MOSFETs with extreme high cell density, which provide excellent R DSON
More informationN & P-Channel 100-V (D-S) MOSFET
N & P-Channel -V (D-S) MOSFET Key Features: Low r DS(on) trench technology Low thermal impedance Fast switching speed Typical Applications: LED Inverter Circuits DC/DC Conversion Circuits Motor drives
More informationTaiwan Goodark Technology Co.,Ltd TGD01P30
TGD P-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationP-Channel Power MOSFET -40V, -22A, 15mΩ
TSM5P4LCS P-Channel Power MOSFET -4V, -22A, 5mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More information235 W Maximum Power Dissipation (whole module) 470 T J Junction Operating Temperature -40 to 150. Torque strength
Discontinued PRODUCT SUMMARY (TYPICAL) V DS (V) 600 R DS(on) (m ) 30 GaN Power Hybrid HEMT Half-Bridge Module Features High frequency operation Free-wheeling diode not required Applications Compact DC-DC
More informationSuper Junction MOSFET
65V 94A * *G Denotes RoHS Compliant, Pb Free Terminal Finish. CO LMOS Power Semiconductors Super Junction MOSFET T-Max TM Ultra Low R DS(ON) Low Miller Capacitance Ultra Low Gate Charge, Q g Avalanche
More informationN-Channel Power MOSFET 40V, 135A, 3.8mΩ
TSM38N4LCP N-Channel Power MOSFET 4V, 35A, 3.8mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive
More informationP-Channel Enhancement Mode Field Effect Transistor
Description The uses advanced trench technology to provide excellent R DS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM
More informationN-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY V (BR)DSS R DS(ON) I D 75 8mΩ 8A G D S. GATE 2. DRAIN 3. SOURCE ABSOLUTE MAXIMUM RATINGS (T C = 25 C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS UNITS Gate-Source Voltage
More informationAOE V Dual Asymmetric N-Channel AlphaMOS
AOE693 3V Dual Asymmetric N-Channel AlphaMOS General Description Bottom Source Technology Very Low R DS(ON) Low Gate Charge High Current Capability RoHS and Halogen-Free Compliant Product Summary Q Q V
More informationACE3006M N-Channel Enhancement Mode MOSFET
Description uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer power
More informationT C =25 unless otherwise specified. Symbol Parameter Value Units V DSS Drain-Source Voltage 40 V
40V N-Channel Trench MOSFET June 205 BS = 40 V R DS(on) typ = 3.3mΩ = 30 A FEATURES Originative New Design Superior Avalanche Rugged Technology Excellent Switching Characteristics Unrivalled Gate Charge
More informationProduct Summery. Applications
General Description The QM3056M6 is the highest performance trench N-ch MOSFETs with extreme high cell density, which provide excellent RDSON and gate charge for most of the synchronous buck converter
More informationUNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL)
UNISONIC TECHNOLOGIES CO., LTD 2NNPP06 60V COMPLEMENTARY ENHANCEMENT MODE MOSFET H-BRIDGE (N-CHANNEL/P-CHANNEL) DESCRIPTION The UTC 2NNPP06 is a complementary enhancement mode MOSFET H-BRIDGE, it uses
More informationN-Channel Power MOSFET 60V, 70A, 12mΩ
TSM2N6LCP N-Channel Power MOSFET 6V, 7A, 2mΩ FEATURES Low R DS(ON) to minimize conductive losses Logic level Low gate charge for fast power switching % UIS and R g tested Compliant to RoHS directive 2/65/EU
More informationAO4912 Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor
Asymmetric Dual N-Channel Enhancement Mode Field Effect Transistor General Description The AO49 uses advanced trench technology to provide excellent R DS(ON) and low gate charge. The two MOSFETs make a
More informationDFP50N06. N-Channel MOSFET
N-Channel MOSFET Features R DS(on) (Max.22 )@ =1V Gate Charge (Typical 36nC) Improved dv/dt Capability High ruggedness 1% Avalanche Tested 1.Gate 2.Drain 3.Source BS = 6V R DS(ON) =.22 ohm = 5A General
More informationAOP608 Complementary Enhancement Mode Field Effect Transistor
AOP68 Complementary Enhancement Mode Field Effect Transistor General Description The AOP68 uses advanced trench technology MOSFETs to provide excellent and low gate charge. The complementary MOSFETs may
More informationACE2020M N-Channel 200-V MOSFET
Description ACE2020M uses advanced trench technology to provide excellent R DS(ON). This device particularly suits for low voltage application such as power management of desktop computer or notebook computer
More informationOperating Junction and 55 to +175 C Storage Temperature Range
Feathers: dvanced trench process technology avalanche energy, 100% test Fully characterized avalanche voltage and current ID =60 BV=60V Rdson=14mΩ(max.) Description: The is a new generation of middle voltage
More informationHCD80R650E 800V N-Channel Super Junction MOSFET
HCD80R650E 800V N-Channel Super Junction MOSFET Features Very Low FOM (R DS(on) X Q g ) Extremely low switching loss Excellent stability and uniformity 100% Avalanche Tested Application Switch Mode Power
More informationN-CHANNEL POWER MOSFET TRANSISTOR APPLICATION. Auotmobile Convert System Networking DC-DC Power System Power Supply etc..
Pb Free Plating Product 55NF06 N-CHANNEL POWER MOSFET TRANSISTOR Pb 50 AMPERE 60 VOLT N-CHANNEL POWER MOSFET DESCRIPTION 12 3 TO-251/IPAK Thinkisemi 50N06 is three-terminal silicon device with current
More informationIRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.
PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
More informationTaiwan Goodark Technology Co.,Ltd
TGD N-Channel Enhancement Mode Power MOSFET Description The uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in PWM, load switching
More informationTSM V N-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 60 156 @ V GS = 10V 3 192 @ V GS = 4.5V 2.1 Features Advance Trench Process Technology High Density Cell
More informationDual N-channel Enhancement-mode Power MOSFETs
Dual N-channel Enhancement-mode Power MOSFETs Simple Drive Requirement Low Gate-charge RoHS-compliant halogen-free SO- package BV DS(ON) D DSS 3V mω Fast Switching Performance I 7.6A R D D Description
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationFNK N-Channel Enhancement Mode Power MOSFET
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK 80H11 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of
More informationSTS10P4LLF6. P-channel 40 V, Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package. Applications. Description. Features
P-channel 40 V, 0.0125 Ω typ., 10 A, StripFET F6 Power MOSFET in SO-8 package Datasheet - production data Very low on-resistance Very low gate charge High avalanche ruggedness Low gate drive power loss
More informationUNISONIC TECHNOLOGIES CO., LTD
UNISONIC TECHNOLOGIES CO., LTD 60 Amps, 60 Volts N-CHANNEL POWER MOSFET DESCRIPTION The UTC 60N06 is n-channel enhancement mode power field effect transistors with stable off-state characteristics, fast
More informationLower Conduction Losses Low Thermal Resistance to PCB ( 0.5 C/W)
PD - 97493A V DS 20 V HEXFET Power MOSFET R DS(on) max (@V GS = 4.5V) R DS(on) max (@V GS = 2.5V) 1.20 mω 1.50 mω PQFN 5X6 mm Applications Charge and discharge switch for battery application Load switch
More informationDevice Marking Device Device Package Reel Size Tape width Quantity 6075K FNK6075K TO-252-2L Parameter Symbol Limit Unit
FNK N-Channel Enhancement Mode Power MOSFET Description The FNK6075K uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. It can be used in a wide variety of applications.
More informationSSF11NS65UF 650V N-Channel MOSFET
Main Product Characteristics V DSS R DS(on) I D 650V 0.32Ω (typ.) 11A TO-220F Marking and Pin S c h e m a ti c Dia g r a m Assignment Features and Benefits High dv/dt and avalanche capabilities 100% avalanche
More informationCharacteristics Symbol Rating Unit. T C=70 o C 36.6 T A=25 o C 20.4 (3) T A=70 o C 16.3 (3) Pulsed Drain Current I DM 100 A 31.2 T C=70 o C 20.0.
General Description The MDD152 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching performance and excellent quality. MDD152 is suitable
More information