RELIABILITY REPORT FOR MAX890LESA+ PLASTIC ENCAPSULATED DEVICES. April 23, 2013 MAXIM INTEGRATED 160 RIO ROBLES SAN JOSE, CA
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1 RELIABILITY REPORT FOR MAX890LESA+ PLASTIC ENCAPSULATED DEVICES April 23, 2013 MAXIM INTEGRATED 160 RIO ROBLES SAN JOSE, CA Approved by Sokhom Chum Quality Assurance Reliability Engineer Maxim Integrated. All rights reserved. Page 1/5
2 Conclusion The MAX890LESA+ successfully meets the quality and reliability standards required of all Maxim Integrated products. In addition, Maxim Integrated's continuous reliability monitoring program ensures that all outgoing product will continue to meet Maxim Integrated's quality and reliability standards. Table of Contents I....Device Description IV....Die Information II....Manufacturing Information III....Packaging Information V....Quality Assurance Information VI....Reliability Evaluation...Attachments I. Device Description A. General The MAX890L smart, low-voltage, P-channel, MOSFET power switch is intended for high-side load-switching applications. This switch operates with inputs from +2.7V to +5.5V, making it ideal for both +3V and +5V systems. Internal current-limiting circuitry protects the input supply against overload. Thermal-overload protection limits power dissipation and junction temperatures. The MAX890L's maximum current limit is 1.2A. The current limit through the switch is programmed with a resistor from SET to ground. The quiescent supply current is a low 10µA. When the switch is off, the supply current decreases to 0.1µA. The MAX890L is available in an 8-pin SO package. Maxim Integrated. All rights reserved. Page 2/5
3 MAX890 II. Manufacturing Information A. Description/Function: 1.2A, Current-Limited, High-Side P-Channel Switch with Thermal Shutdown B. Process: B12 C. Number of Device Transistors: D. Fabrication Location: Oregon E. Assembly Location: Thailand, Philippines, or Malaysia F. Date of Initial Production: Pre 1997 III. Packaging Information A. Package Type: 150 mil 8L SOIC B. Lead Frame: Copper C. Lead Finish: 100% matte Tin D. Die Attach: Conductive E. Bondwire: Au (1.3 mil dia.) F. Mold Material: Epoxy with silica filler G. Assembly Diagram: # H. Flammability Rating: Class UL94-V0 I. Classification of Moisture Sensitivity per 1 JEDEC standard J-STD-020-C J. Single Layer Theta Ja: 170 C/W K. Single Layer Theta Jc: 40 C/W L. Multi Layer Theta Ja: C/W M. Multi Layer Theta Jc: 36 C/W IV. Die Information A. Dimensions: 56 X 126 mils B. Passivation: Si 3N 4/SiO 2 (Silicon nitride/ Silicon dioxide) C. Interconnect: Al/0.5%Cu with Ti/TiN Barrier D. Backside Metallization: None E. Minimum Metal Width: 1.2 microns (as drawn) F. Minimum Metal Spacing: 1.2 microns (as drawn) G. Bondpad Dimensions: H. Isolation Dielectric: SiO 2 I. Die Separation Method: Wafer Saw Maxim Integrated. All rights reserved. Page 3/5
4 V. Quality Assurance Information A. Quality Assurance Contacts: Richard Aburano (Manager, Reliability Engineering) Don Lipps (Manager, Reliability Engineering) Bryan Preeshl (Vice President of QA) B. Outgoing Inspection Level: 0.1% for all electrical parameters guaranteed by the Datasheet. 0.1% For all Visual Defects. C. Observed Outgoing Defect Rate: < 50 ppm D. Sampling Plan: Mil-Std-105D VI. Reliability Evaluation A. Accelerated Life Test The results of the biased (static) life test are shown in Table 1. Using these results, the Failure Rate ( ) is calculated as follows: = 1 = 1.83 (Chi square value for MTTF upper limit) MTTF 192 x 4340 x 480 x 2 (where 4340 = Temperature Acceleration factor assuming an activation energy of 0.8eV) = 2.3 x 10-9 = 2.3 F.I.T. (60% confidence 25 C) The following failure rate represents data collected from Maxim Integrated's reliability monitor program. Maxim Integrated performs quarterly life test monitors on its processes. This data is published in the Reliability Report found at Cumulative monitor data for the B12 Process results in a FIT Rate of 25C and 55C (0.8 ev, 60% UCL) B. E.S.D. and Latch-Up Testing (lot JX3BEQ001I, D/C 1048) The PX82-1 die type has been found to have all pins able to withstand a transient pulse of: ESD-HBM: ESD-CDM: +/- 2500V per JEDEC JESD22-A114 +/- 750V per JEDEC JESD22-C101 Latch-Up testing has shown that this device withstands a current of +/- 100mA and overvoltage per JEDEC JESD78. Maxim Integrated. All rights reserved. Page 4/5
5 Table 1 Reliability Evaluation Test Results MAX890LESA+ TEST ITEM TEST CONDITION FAILURE IDENTIFICATION SAMPLE SIZE NUMBER OF COMMENTS FAILURES Static Life Test (Note 1) Ta = 135 C Biased Time = 192 hrs. DC Parameters 80 0 NX3BCA112BQ, D/C 0210 & functionality 80 0 IX3BB3156AQ, D/C NLCBFQ002A, D/C NLCBGU001A, D/C NNUEDQ002B, D/C NLCBHB024B, D/C 9752 Note 1: Life Test Data may represent plastic DIP qualification lots. Maxim Integrated. All rights reserved. Page 5/5
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Features. Typical Configuration ZXGD3113W6. Top View Pin-Out
SYNCHRONOUS MOSFET CONTROLLER IN Description The is intended to drive a MOSFET configured as an ideal diode replacement. The device is comprised of a differential amplifier detector stage and high current
CPC3982TTR (SOT-23) N-Channel Depletion-Mode Vertical DMOS FET INTEGRATED CIRCUITS DIVISION
N-Channel Depletion-Mode Vertical DMOS FET V (BR)DSX / V (BR)DGX R DS(on) (max) SS (min) Package 8V 38 ma SOT-23 Features High Breakdown Voltage: 8V Low (off) Voltage: -.4V to -3.V Depletion Mode Device
IRS21844MPBF HALF-BRIDGE DRIVER
November 19, 2010 HALF-BRIDGE DRIVER Features Floating channel designed for bootstrap operation Fully operational to + 600 V Tolerant to negative transient voltage, dv/dt immune Gate drive supply range
IRS2113MPBF HIGH- AND LOW-SIDE DRIVER
February 8, 2012 IRS2113MPBF HIGH- AND LOW-SIDE DRIVER Features Floating channel designed for bootstrap operation Fully operational to +600 V Tolerant to negative transient voltage dv/dt immune Gate drive
Transient Voltage Suppression Diodes. Surface Mount 400W > P4SMA series. Features. less than 1μA when V BR. Applications. Additional Infomarion
P4SMA Series RoHS Pb e3 Uni-directional Bi-directional Description The P4SMA series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other
China - Germany - Korea - Singapore - United States - smc-diodes.com
Technical Data Features: Glass Passivated Die Construction 5000W Peak Pulse Power Dissipation Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Case Material
Kxxxzy SIDAC. Teccor brand Thyristors Standard Bidirectional SIDACs. Description
Kxxxzy SIDAC Description The SIDAC is a silicon bilateral voltage triggered switch. Upon application of a voltage exceeding the SIDAC breakover voltage point, the SIDAC switches on through a negative resistance
MASW P. SURMOUNT PIN Diode Switch Element with Thermal Terminal. Features. Description. Ordering Information 2.
Features Specified Bandwidth: 45MHz 2.5GHz Useable 30MHz to 3.0GHz Low Loss 40dB High C.W. Incident Power, 50W at 500MHz High Input IP3, +66dBm @ 500MHz Unique Thermal Terminal for
MIC5271. Applications. Low. output current). Zero-current off mode. and reduce power. GaAsFET bias Portable cameras. le enable pin, allowing the user
µcap Negative Low-Dropout Regulator General Description The is a µcap 100mA negativee regulator in a SOT-23-this regulator provides a very accurate supply voltage for applications that require a negative
MP2002 Low Input Voltage 500mA Linear Regulator
The Future of Analog IC Technology DESCRIPTION The MP2002 is a low-current, low-dropout linear regulator operating over a single input supply between.v to.v. The output voltage of the MP2002 is adjustable
TypeR(Ribbon)n Curent
PowerFLAT 5x6singleisland TypeR(Ribbon)n Curent WetableFlanks Botom View SideView TopView º º º º Remark:ComparisondonewithrealPackage,curentandWetableFlanks. Itmaybediferentfrom previousdrawing,presentinsomedatasheet.
MIC5202. Dual 100mA Low-Dropout Voltage Regulator. Features. General Description. Pin Configuration. Ordering Information. Typical Application
MIC MIC Dual ma Low-Dropout Voltage Regulator Preliminary Information General Description The MIC is a family of dual linear voltage regulators with very low dropout voltage (typically 7mV at light loads
PE42562 Document Category: Product Specification
Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz Fast switching time of 21 ns Power handling of 33 m CW Logic select (LS)
PE42512 Document Category: Product Specification
PE2 Document Category: Product Specification UltraCMOS, 9 khz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.3 @ 6 GHz Fast switching time of 2 ns Power handling of m CW Logic select (LS)
Samples. Symbol Parameter Test Conditions Value Unit RMS on-state current T C = 100 C 40 A I T(AV) Average on-state current T C
Sxx40x Series RoHS Description Excellent unidirectional switches for phase control applications such as heating and motor speed controls. Standard phase control SCRs are triggered with few milliamperes
MIC94040/1/2/3. Features. General Description. Applications. Typical Application. 28mΩ R DSON 3A High Side Load Switch in 1.2mm x 1.
28mΩ R DSON 3A High Side Load Switch in 1.2mm x 1.2mm MLF package General Description The is a family of high-side load switches designed to operate from 1.7V to 5.5V input voltage. The load switch pass
Advanced Monolithic Systems
Advanced Monolithic Systems 5A ULTRA LOW DROPOUT VOLTAGE REGULATORS RoHS compliant FEATURES Adjustable or Fixed Output 1.5V, 2.5V, 2.85V, 3.0V, 3.3V, 3.5V and 5.0V Output Current of 5A Low Dropout, 350mV
HA-2520, HA-2522, HA-2525
HA-, HA-, HA- Data Sheet September 99 File Number 9. MHz, High Slew Rate, Uncompensated, High Input Impedance, Operational Amplifiers HA-// comprise a series of operational amplifiers delivering an unsurpassed
V OUT. Speed control voltage (V SET. Package Code. K : SOP-8 Operating Ambient Temperature Range I : -40 to 85 C Handling Code TR : Tape & Reel
Low Dropout 6mA Linear Regulator for DC Fan Control Features Low Dropout Voltage: mv (typical) @ 6mA Low Quiescent Current: 4mA Selectable Adjustable/Full Speed Mode O/I Voltage Ratio in Adjustable Mode
PE Document Category: Product Specification
Document Category: Product Specification UltraCMOS, 1 MHz8 GHz Features High isolation: @ 6 GHz Low insertion loss: 1.1 @ 6 GHz RF T RISE /T FALL time of 1 ns Power handling of 31 m CW Logic select (LS)