FAN4010 High-Side Current Sensor
|
|
- Juliet Dean
- 5 years ago
- Views:
Transcription
1 FAN41 High-Side Current Sensor Features at +5 V Low Cost, Accurate, High-Side Current Sensing Output Voltage Scaling Up to.5 V Sense Voltage V to V Supply Range μa Typical Offset Current 3.5 μa Quiescent Current -.% Accuracy -Lead MicroPak MLP Package Applications Battery Chargers Battery Chargers Smart Battery Packs DC Motor Control Over-Current Monitor Pow er Management Programmable Current Source Description The FAN41 is a high-side current sense amplifier designed for battery-pow ered systems. Using the FAN41 for high-side pow er-line monitoring does not interfere w ith the battery charger s ground path. The FAN41 is designed for portable PCs, cellular phones, and other portable systems w here battery / DC pow erline monitoring is critical. To provide a high level of flexibility, the FAN41 functions w ith an external sense resistor to set the range of load current to be monitored. It has a current output that can be converted to a ground-referred voltage w ith a single resistor, accommodating a w ide range of battery voltages and currents. The FAN41 features allow it to be used for gas gauging as w ell as uni-directional or bi-directional current monitoring. FAN41 High-Side Current Sensor Ordering Information Part Number Operating Temperature Range Top Mark Package Packing Method FAN41ILX FAN41ILX-F113 (1) -4 C to +85 C PX -Lead, Molded Leadless Package (MLP) Tape & Reel Notes: 1. Legacy product number; please order FAN41ILX for new designs.. All packages are lead free per JEDEC: J-STD-B standard. 3. Moisture sensitivity level for all parts is MSL-1. 7 Semiconductor Components Industries, LLC. Publication Order Number: November-17, Rev. FAN41/D
2 Block Diagram and Typical Circuit V IN Load 1 I OUT V OUT 1 R sense V IN Load NC GND 5 3 I OUT NC 4 R OUT R Load FAN41 High-Side Current Sensor Figure 1. Functional Block Diagram Figure. Typical Circuit Pin Configuration V IN 1 Load NC 5 GND I OUT 3 4 NC Figure 3. Pin Assignment (Top Through View) Pin Descriptions Name Type Description, 4 NC No Connect; leave pin floating 5 GND Ground 3 I OUT Output Current, proportional to V IN-V LOAD 1 VIN Input Voltage, Supply Voltage Load Connection to load or battery
3 Absolute Maximum Ratings Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be operable above the recommended operating conditions and stressing the parts to these levels is not recommended. In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability. The absolute maximum ratings are stress ratings only. Symbol Parameter Min. Typ. Max. Unit VS Supply Voltage.3 V V IN Input Voltage Range.3 V TJ Junction Temperature +15 C T STG Storage Temperature Range C T L Reflow Temperature, Soldering + C Θ JA Package Thermal Resistance ( 4 ) 45 C/W Electrostatic Discharge Human Body Model, JESD-A114 5 ESD V Protection Charged Device Model, JESD-C11 1 Note: 4. Package thermal resistance (ΘJA), JEDEC standard, multi-layer test boards, still air. FAN41 High-Side Current Sensor Recommended Operating Conditions The Recommended Operating Conditions table defines the conditions for actual device operation. Recommended operating conditions are specified to ensure optimal performance to the datasheet specifications. ON Semiconductor does not recommend exceeding them or designing to Absolute Maximum Ratings. Symbol Parameter Min. Max. Unit T A Operating Temperature Range C V S Supply Voltage Range V VIN Input Voltage V V SENSE Sensor Voltage Range, V SENSE=V IN-V LOAD, R OUT= Ω.5 V 3
4 Electrical Characteristics at +5 V T A = 5 C, V S = V IN = 5 V, R OUT = 1 Ω, R SENSE = 1 Ω, unless otherw ise noted. Symbol Parameter Conditions Min. Typ. Max. Unit Frequency Domain Response BWSS Small Signal Bandw idth PIN=-4 dbm ( 5 ), VSENSE=1 mv khz B WLS Large Signal Bandw idth P IN=- dbm ( ), V SENSE=1 mv MHz VIN Input Voltage Range VIN=VS V V SENSE= mv 1 9 V SENSE=1 mv µa IOUT Output Current ( 7, 8 ) VSENSE=1 mv V SENSE= mv ma VSENSE=1 V I S Supply Current ( 7 ) V SENSE= V, GND Pin Current µa ISENSE Load Pin Input Current na A CY Accuracy R SENSE=1 Ω, R SENSE= mv ( 7 ) % Gm Transconductance IOUT/VSENSE 1 µa/v FAN41 High-Side Current Sensor Notes: dbm =.3 mvpp into 5 Ω.. - dbm = 3 mvpp into 5 Ω. 7. 1% tested at 5 C. 8. Includes input offset voltage contribution. 4
5 Typical Performance Characteristics T A = 5 C, V S = V IN = 5 V, R OUT = 1 Ω, R SENSE = 1 Ω, unless otherw ise noted. IOUT (ma) V S = 5V R OUT = Ω m 1m 1m 1m 1 1 V SENSE (V) R OUT = 1Ω Output Current Error (%) V IN = 5V R OUT = Ω Average of 1 parts +1 SIGMA -1 SIGMA Average V SENSE (V) FAN41 High-Side Current Sensor Figure 4. V SENSE vs. Output Current Figure 5. Output Current Error vs. V SENSE IOUT (ma) V SENSE = 1V V IN = 5V R L = Ω Temperature ( C) Figure. Output Current vs. Temperature Figure 7. Frequency Response Normalized Gain (db) V s = 5V R OUT = 1Ω V SENSE =.1V V SENSE =.1V P IN = -dbm of V SENSE =.1V & 1V P IN = -4dBm of V SENSE =.1V Frequency (MHz) V SENSE = 1V 1 1 R OUT = Ω V SENSE = 1V 1 1 R OUT = 1Ω V SENSE = 1V 8 V SENSE =.8V 8 V SENSE =.8V IOUT (ma) 4 V SENSE =.V V SENSE =.4V V SENSE =.V IOUT (ma) 4 V SENSE =.V V SENSE =.4V V SENSE =.V V IN (V) V IN (V) Figure 8. Transfer Characteristics Figure 9. Transfer Characteristics 5
6 Typical Performance Characteristics (Continued) T A = 5 C, V S = V IN = 5 V, R OUT = 1 Ω, R SENSE = 1 Ω, unless otherw ise noted. CMRR (db) -1 V IN = 5V P IN = -dbm R OUT = 1Ω V SENSE = 1mV -5 - V SENSE = 1mV V SENSE = 1mV Frequency (MHz) Output Current Error (%).5 V SENSE = mv. R OUT = Ω Average of 1 parts SIGMA.5 Average SIGMA V IN (V). FAN41 High-Side Current Sensor Figure 1. CMRR vs. Frequency Figure 11. V IN vs. Output Current Error V IN = 5V R OUT = 1Ω V SENSE (V) Figure 1. Supply Current vs. V SENSE
7 Application Information Detailed Description The FAN41 measures the voltage drop (VSENSE) across an external sense resistor in the high-voltage side of the circuit. VSENSE is converted to a linear current via an internal operational amplifier and precision 1 Ω resistor. The value of this current is VSENSE/1 Ω (internal). Output current flow s from the IOUT pin to an external resistor ROUT to generate an output voltage proportional to the current flow ing to the load. Use the follow ing equations to scale a load current to an output voltage: V SENSE = I LOAD R SENSE (1) V OUT =.1 V SENSE R OUT () must be taken not to exceed the maximum pow er dissipation of the copper trace. V OUT INPUT.3in COPPER 1 V IN NC R SENSE.1in COPPER Load GND 3 I OUT NC 4 5 LOAD.3in COPPER FAN41 High-Side Current Sensor V OUT 3 I OUT Load + R sense V sense 1 - V 1 IN V IN R Load R OUT Figure 14. Using PCB Trace for RSENSE R OUT Figure 13. Functional Circuit Selecting R SENSE Selection of R SENSE is a balance betw een desired accuracy and allow able voltage loss. Although the FAN41 is optimized for high accuracy w ith low VSENSE values, a larger RSENSE value provides additional accuracy. How ever, larger values of RSENSE create a larger voltage drop, reducing the effective voltage available to the load. This can be troublesome in low - voltage applications. Because of this, the maximum expected load current and allow able load voltage should be w ell understood. Although higher values of VSENSE can be used, RSENSE should be chosen to satisfy the follow ing condition: 1mV < V SENSE < mv (3) For low -cost applications w here accuracy is not as important, a portion of the printed circuit board (PCB) trace can be used as an R SENSE resistor. Figure 14 show s an example of this configuration. The resistivity of a.1-inch w ide trace of tw o-ounce copper is about 3 mω/ft. Unfortunately, the resistance temperature coefficient is relatively large (approximately.4%/ C), so systems w ith a w ide temperature range may need to compensate for this effect. Additionally, self heating due to load currents introduces a nonlinearity error. Care Selecting R OUT R OUT can be chosen to obtain the output voltage range required for the particular dow nstream application. For example, if the output of the FAN41 is intended to drive an analog-to-digital convertor (ADC), ROUT should be chosen such that the expected full-scale output current produces an input voltage that matches the input range of the ADC. For instance, if expected loading current ranges from to 1 A, an RSENSE resistor of 1 Ω produces an output current that ranges from to 1 ma. If the input voltage range of the ADC is to V, an ROUT value of Ω should be used. The input voltage and full-scale output current (IOUT_FS) needs to be taken into account w hen setting up the output range. To ensure sufficient operating headroom, choose: R OUT I OUTFS such that V IN V SENSE R OUT I OUTFS > 1.V Output current accuracy for the recommended VSENSE betw een 1 mv and mv are typically better than 1%. As a result, the absolute output voltage accuracy is dependent on the precision of the output resistor. Make sure the input impedance of the circuit connected to VOUT is much higher than ROUT to ensure accurate VOUT values. Since the FAN41 provides a trans-impedance function, it is suitable for applications involving current rather than voltage sensing. (4) 7
8 Physical Dimensions X.5 C 1.45 (.54) TOP VIEW PIN 1 IDENTIFIER 5.5±.5 B X.5 C 1. A (.49) 5X (.5) 1X PIN 1 (1) (.3) X (.75) FAN41 High-Side Current Sensor C.5..5 C RECOMMENED LAND PATTERN.35±.5 DETAIL A 1.45±.5 1..±.5 X.1 C B A.5 C 1.±.5 (.5) X NOTES: BOTTOM VIEW.3±.5.35±.5 1. CONFORMS TO JEDEC STANDARD MO-5 VARIATION UAAD. DIMENSIONS ARE IN MILLIMETERS 3. DRAWING CONFORMS TO ASME Y14.5M-9 4. LANDPATTERN RECOMMENDATION PER FSC 5. PIN ONE IDENTIFIER IS X LENGTH OF ANY OTHER LINE IN THE MARK CODE LAYOUT.. FILENAME AND REVISION: MACAREV.5 (.15) 4X 5X 5X.75 X 45 CHAMFER.4±.5 DETAIL A PIN 1 TERMINAL Figure 15. -Lead MicroPak Molded Leadless Package (MLP) 8
9 FAN41 High-Side Current Sensor ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor s product/patent coverage may be accessed at /site/pdf/patent-marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor 1951 E. 3nd Pkwy, Aurora, Colorado 811 USA Phone: or Toll Free USA/Canada Fax : or Toll Free USA/Canada orderlit@onsemi.com N. Amer ican Technical Support: Toll Free USA/Canada. Eur ope, Middle East and Afr ica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Or der Literature: For additional information, please contact your local Sales Representative 9
FAN4010 High-Side Current Sensor
November 213 FAN41 High-Side Current Sensor Features a +5 V Low Cost, Accurate, High-Side Current Sensing Output Voltage Scaling Up to 2.5 V Sense Voltage 2 V to 6 V Supply Range 2 μa Typical Offset Current
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationDescription IN(-) IN(+) FAN156L6X CN -40 to 85 C 6-Lead, MicroPak, 1 x 1.45 mm Wide
FAN56 Low Voltage Comparator Features Low Supply Current: I DD 6 μa (Typical) Single Pow er Supply Operation Wide Common-Mode Input Voltage Range Push-Pull Output Circuit Low Input Bias Current Internal
More informationKA431 / KA431A / KA431L Programmable Shunt Regulator
KA431 / KA431A / KA431L Programmable Shunt Regulator Features Programmable Output Voltage to 36 V Low Dynamic Output Impedance: 0.2 Ω (Typical) Sink Current Capability: 1.0 to 100 ma Equivalent Full-Range
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNCS2005. Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output
Operational Amplifier, Low Power, 8 MHz GBW, Rail-to-Rail Input-Output The provides high performance in a wide range of applications. The offers beyond rail to rail input range, full rail to rail output
More informationFeatures. Symbol Parameter Ratings Units V DSS Drain-Source Voltage -40 V
FDS4675-F085 40V P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET is a rugged gate version of ON Semiconductor s advanced Power Tranch process. It has been optimized for power management
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationBAV ma 70 V High Conductance Ultra-Fast Switching Diode
BAV99 200 ma 70 V High Conductance Ultra-Fast Switching Diode Features High Conductance: I F = 200 ma Fast Switching Speed: t rr < 6 ns Maximum Small Plastic SOT-2 Package Series-Pair Configuration Applications
More informationBAV103 High Voltage, General Purpose Diode
BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless
More informationFSA2457 Dual DPDT, 5Ω Analog Data Switch
FSA2457 Dual DPDT, 5Ω Analog Data Switch Features Low On Capacitance for Data Path: 12pF Typical Low On Resistance for Data Path: 5Ω Typical Low Pow er Quiescent Consumption: 1μA Maximum Wide -3db Bandw
More informationNC7S00 TinyLogic HS 2-Input NAND Gate
NC7S00 TinyLogic HS 2-Input NAND Gate General Description The NC7S00 is a single 2-Input high performance CMOS NAND Gate. Advanced Silicon Gate CMOS fabrication assures high speed and low power circuit
More informationGeneral Description. Applications. Power management Load switch Q2 3 5 Q1
FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ
More informationJ109 / MMBFJ108 N-Channel Switch
J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92
More informationFDN327N FDN327N. N-Channel 1.8 Vgs Specified PowerTrench MOSFET. Absolute Maximum Ratings
N-Channel.8 Vgs Specified PowerTrench MOSFET General Description This V N-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationKSC2383 NPN Epitaxial Silicon Transistor
KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92
More informationExtended V GSS range ( 25V) for battery applications
Dual Volt P-Channel PowerTrench MOSFET General Description This P-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or conventional
More informationFJP13007 High Voltage Fast-Switching NPN Power Transistor
FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFPF1005-FPF1006 IntelliMAX TM Advanced Load Management Products
FPF5-FPF IntelliMAX TM Advanced Load Management Products Features 1. to 5.5V Input Voltage Range Typical R DS(ON) = 5mΩ @ = 5.5V Typical R DS(ON) = 55mΩ @ ESD Protected, above V HBM Applications PDAs Cell
More informationFeatures D G. T A =25 o C unless otherwise noted. Symbol Parameter Ratings Units. (Note 1a) 3.8. (Note 1b) 1.6
FDD564P 6V P-Channel PowerTrench MOSFET FDD564P General Description This 6V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationMM74HC14 Hex Inverting Schmitt Trigger
MM74HC14 Hex Inverting Schmitt Trigger Features Typical propagation delay: 13ns Wide power supply range: 2V 6V Low quiescent current: 20µA maximum (74HC Series) Low input current: 1µA maximum Fanout of
More informationLM431SA / LM431SB / LM431SC Programmable Shunt Regulator
A / B / C Programmable Shunt Regulator Features Programmable Output Voltage to 6 V Low Dynamic Output Impedance:.2 Ω (Typical) Sink Current Capability: 1. to 1 ma Equivalent Full-Range Temperature Coefficient
More informationFDN335N N-Channel 2.5V Specified PowerTrench TM MOSFET
N-Channel.5V Specified PowerTrench TM MOSFET General Description This N-Channel.5V specified MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially tailored to
More informationMM74HC04 Hex Inverter
MM74HC04 Hex Inverter Features Typical propagation delay: 8ns Fan out of 10 LS-TTL loads Quiescent power consumption: 10µW maximum at room temperature Low input current: 1µA maximum General Description
More informationDual N-Channel, Digital FET
FDG6301N-F085 Dual N-Channel, Digital FET Features 25 V, 0.22 A continuous, 0.65 A peak. R DS(ON) = 4 @ V GS = 4.5 V, R DS(ON) = 5 @ V GS = 2.7 V. Very low level gate drive requirements allowing directoperation
More informationFDMA3028N. Dual N-Channel PowerTrench MOSFET. FDMA3028N Dual N-Channel PowerTrench MOSFET. 30 V, 3.8 A, 68 mω Features. General Description
FDMA38N Dual N-Channel PowerTrench MOSFET 3 V, 3.8 A, 68 mω Features Max. R DS(on) = 68 mω at V GS =.5 V, I D = 3.8 A Max. R DS(on) = 88 mω at V GS =.5 V, I D = 3. A Max. R DS(on) = 3 mω at V GS =.8 V,
More informationFGH40N60SFDTU-F V, 40 A Field Stop IGBT
FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive
More informationTIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor
TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More information74VHC14 Hex Schmitt Inverter
74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection
More informationFDS8949 Dual N-Channel Logic Level PowerTrench MOSFET
FDS899 Dual N-Channel Logic Level PowerTrench MOSFET V, 6A, 9mΩ Features Max r DS(on) = 9mΩ at V GS = V Max r DS(on) = 36mΩ at V GS =.5V Low gate charge High performance trench technology for extremely
More informationPUBLICATION ORDERING INFORMATION. Semiconductor Components Industries, LLC
FDS39 FDS39 V N-Channel Dual PowerTrench MOSFET General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationFGH12040WD 1200 V, 40 A Field Stop Trench IGBT
FGH12040WD 1200 V, 40 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J = 175 o C Positive Temperature Co-efficient for Easy Parallel Operating Low Saturation Voltage: V CE(sat) = 2.3
More informationP-Channel PowerTrench MOSFET
FDD4685-F085 P-Channel PowerTrench MOSFET -40 V, -32 A, 35 mω Features Typical R DS(on) = 23 m at V GS = -10V, I D = -8.4 A Typical R DS(on) = 30 m at V GS = -4.5V, I D = -7 A Typical Q g(tot) = 19 nc
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationNC7SZ32 -TinyLogic UHS Two-Input OR Gate
NC7SZ32 TinyLogic UHS Two-Input OR Gate Features Ultra-High Speed: t PD 2.4ns (Typical) into 50pF at 5V V CC High Output Drive: ±24mA at 3V V CC Broad V CC Operating Range: 1.65V to 5.5V Matches Performance
More informationNC7S14 TinyLogic HS Inverter with Schmitt Trigger Input
NC7S14 TinyLogic HS Inverter with Schmitt Trigger Input General Description The NC7S14 is a single high performance CMOS Inverter with Schmitt Trigger input. The circuit design provides hysteresis between
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFeatures. TA=25 o C unless otherwise noted
NDS6 NDS6 P-Channel Enhancement Mode Field Effect Transistor General Description These P-Channel enhancement mode field effect transistors are produced using ON Semiconductor's proprietary, high cell density,
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear
NC7SZ175 TinyLogic UHS D-Type Flip-Flop with Asynchronous Clear General Description The NC7SZ175 is a single positive edge-triggered D-type CMOS Flip-Flop with Asynchronous Clear from ON Semiconductor
More informationFDPC4044. Common Drain N-Channel PowerTrench MOSFET. FDPC4044 Common Drain N-Channel PowerTrench MOSFET. 30 V, 27 A, 4.
FDPC444 Common Drain N-Channel PowerTrench MOSFET 3 V, 7 A, 4.3 mω Features Max r SS(on) = 4.3 mω at V GS = V, I SS = 7 A Max r SS(on) = 6.4 mω at V GS = 4.5 V, I SS = 3 A Pakage size/height: 3.3 x 3.3
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFDS8935. Dual P-Channel PowerTrench MOSFET. FDS8935 Dual P-Channel PowerTrench MOSFET. -80 V, -2.1 A, 183 mω
FDS935 Dual P-Channel PowerTrench MOSFET - V, -. A, 3 mω Features Max r DS(on) = 3 mω at V GS = - V, I D = -. A Max r DS(on) = 7 mω at V GS = -.5 V, I D = -.9 A High performance trench technology for extremely
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationN-Channel Logic Level Enhancement Mode Field Effect Transistor. Features. TA=25 o C unless otherwise noted
BSS BSS N-Channel Logic Level Enhancement Mode Field Effect Transistor General Description These N-Channel enhancement mode field effect transistors are produced using ON Semiconductor s proprietary, high
More informationN-Channel Logic Level PowerTrench MOSFET
FDN56N-F85 N-Channel Logic Level PowerTrench MOSFET 6 V,.6 A, 98 mω Features R DS(on) = 98 mω at V GS = 4.5 V, I D =.6 A R DS(on) = 8 mω at V GS = V, I D =.7 A Typ Q g(tot) = 9. nc at V GS = V Low Miller
More informationFFSP1065A/D. Silicon Carbide Schottky Diode 650 V, 10 A Features. FFSP1065A Silicon Carbide Schottky Diode. Description.
FFSP65A Silicon Carbide Schottky Diode 65 V, A Features Max Junction Temperature 75 o C Avalanche Rated 6 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationFDS8984 N-Channel PowerTrench MOSFET 30V, 7A, 23mΩ
FDS898 N-Channel PowerTrench MOSFET V, 7A, 3mΩ General Description This N-Channel MOSFET has been designed specifically to improve the overall efficiency of DC/DC converters using either synchronous or
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationRURP1560-F085 15A, 600V Ultrafast Rectifier
RURP56F85 5A, 6V Ultrafast Rectifier Features High Speed Switching ( t rr =52ns(Typ.) @ I F =5A ) Low Forward Voltage( V F =.5V(Max.) @ I F =5A ) Avalanche Energy Rated AECQ Qualified Applications Automotive
More informationNC7SZ157 TinyLogic UHS 2-Input Non-Inverting Multiplexer
NC7SZ157 TinyLogic UHS 2-Input Non-Inverting Multiplexer Features Broad CC Operating Range: 1.65 to 5.5 Ultra High-Speed Pow er Dow n High-Impedance Inputs/Outputs Over-oltage Tolerance Inputs Facilitate
More informationNDS351N N-Channel Logic Level Enhancement Mode Field Effect Transistor
NS3N N-Channel Logic Level Enhancement Mode Field Effect Transistor General escription These N-Channel logic level enhancement mode power field effect transistors are produced using ON Semiconductor's
More informationFGH40T100SMD 1000 V, 40 A Field Stop Trench IGBT
FGH4TSMD V, 4 A Field Stop Trench IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) =.9 V(Typ.) @ I C = 4 A High Input Impedance Fast Switching RoHS Compliant Applications UPS, welder,
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationNC7WZ04/D. TinyLogic UHS Dual Inverter. NC7WZ04 TinyLogic UHS Dual Inverter. Features. Description. Ordering Information. Connection Diagrams
NC7WZ04 TinyLogic UHS Dual Inverter Features Ultra-High Speed: t PD 2.3ns (Typical) into 50pF at 5 CC High Output Drive: ±24mA at 3 CC Broad CC Operating Range: 1.65 to 5.5 Matches Performance of LCX w
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationN-Channel PowerTrench MOSFET
FDBL86363-F85 N-Channel PowerTrench MOSFET 8 V, 4 A,. mω Features Typical R DS(on) =.5 mω at V GS = V, I D = 8 A Typical Q g(tot) = 3 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationQED223 Plastic Infrared Light Emitting Diode
QED223 Plastic Infrared Light Emitting Diode Features λ = 880nm Chip material = AlGaAs Package type: T-1 3/4 (5mm lens diameter) Matched photosensor: QSD123/QSD124 Medium wide emission angle, 30 High output
More informationFeatures S 1. TA=25 o C unless otherwise noted
FC5P V P-Channel Logic Level PowerTrench MOSFET FC5P General escription This V P-Channel MOSFET uses ON Semiconductor s high voltage PowerTrench process. It has been optimized for power management applications.
More informationLM431SA, LM431SB, LM431SC. Programmable Shunt Regulator
A, B, C Programmable Shunt Regulator Description The A / B / C are three terminal the output adjustable regulators with thermal stability over operating temperature range. The output voltage can be set
More informationNCP334, NCP335. 2A Ultra-Small Controlled Load Switch with Auto-Discharge Path
2A Ultra-Small Controlled Load Switch with Auto-Discharge Path The NCP334 and NCP335 are low Ron MOSFET controlled by external logic pin, allowing optimization of battery life, and portable device autonomy.
More informationNVC6S5A444NLZ. Power MOSFET. 60 V, 78 m, 4.5 A, N Channel
Power MOSFET 6 V, 78 m,.5 A, N Channel Automotive Power MOSFET designed to minimize gate charge and low on resistance. AEC Q qualified MOSFET and PPAP capable suitable for automotive applications. Features.5
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFDD V P-Channel POWERTRENCH MOSFET
3 V P-Channel POWERTRENCH MOSFET General Description This P Channel MOSFET is a rugged gate version of ON Semiconductor s advanced POWERTRENCH process. It has been optimized for power management applications
More informationN-Channel PowerTrench MOSFET
FDMS86369-F85 N-Channel PowerTrench MOSFET 8 V, 65 A, 7.5 mω Features Typical R DS(on) = 5.9 mω at V GS = V, I D = 65 A Typical Q g(tot) = 35 nc at V GS = V, I D = 65 A UIS Capability RoHS Compliant Qualified
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationPacking Method. Symbol Parameter Test Conditions Min. Typ. Max. Unit V CE(sat) Saturation Voltage V C = 25 A, V GE = 15 V,
FGA25N2ANTDTU 2 V, 25 A NPT Trench IGBT Features NPT Trench Technology, Positive Temperature Coefficient Low Saturation Voltage: V CE(sat), typ = 2. V @ = 25 A and Low Switching Loss: E off, typ =.96 mj
More informationNCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage
Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up
More informationDevice Marking Device Package Reel Size Tape Width Quantity FQT1N60C FQT1N60C SOT mm 12mm 4000
FQT1N60C N-Channel QFET MOSFET 600V, 0.2 A, 11.5 Ω Description This N-Channel enhancement mode power MOSFET is produced using ON Semiconductor s proprietary planar stripe and DMOS technology. This advanced
More informationFeatures 2.5 A, 30 V. R DS(ON) = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage 30 V
FC5AN ual N-Channel Logic Level PowerTrench TM MOSFET General escription Features These N-Channel Logic Level MOSFETs are produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFFSP1665A/D. Silicon Carbide Schottky Diode 650 V, 16 A Features. FFSP1665A Silicon Carbide Schottky Diode. Description.
FFSP1665A Silicon Carbide Schottky Diode 65 V, 16 A Features Max Junction Temperature 175 o C Avalanche Rated 81 mj High Surge Current Capacity Positive Temperature Coefficient Ease of Paralleling No Reverse
More informationN-Channel SuperFET MOSFET
FCD5N-F5 N-Channel SuperFET MOSFET V,. A,. Ω Features V,.A, typ. R ds(on) =mω@v GS =V Ultra Low Gate Charge (Typ. Q g = nc) UIS Capability RoHS Compliant Qualified to AEC Q Applications Automotive On Board
More informationFGH50T65SQD 650 V, 50 A Field Stop Trench IGBT
FGH5T65SQD 65 V, 5 A Field Stop Trench IGBT Features Maximum Junction Temperature : T J =75 o C Positive Temperaure Co-efficient for Easy Parallel Operating High Current Capability Low Saturation Voltage:
More informationFeatures -4 A, -30 V. R DS(ON) G 3. = 25 C unless otherwise note. Symbol Parameter Ratings Units. Drain-Source Voltage -30 V
FC65P Single P-Channel, Logic Level, PowerTrench TM MOSFET General escription This P-Channel Logic Level MOSFET is produced using ON Semiconductor's advanced PowerTrench process that has been especially
More informationP-Channel PowerTrench MOSFET -40V, -14A, 64mΩ
FDD4243-F85 P-Channel PowerTrench MOSFET -V, -4A, 64mΩ Features Typ r DS(on) = 36m at V GS = -V, I D = -6.7A Typ r DS(on) = 48m at V GS = -4.5V, I D = -5.5A Typ Q g(tot) = 2nC at V GS = -V High performance
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationAbsolute Maximum Ratings T C = 25 o C, Unless Otherwise Specified BUZ11 Drain to Source Breakdown Voltage (Note 1)
Data Sheet September 213 File Number 2253.2 N-Channel Power MOSFET 5V, 3A, 4 mω This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching
More informationDescription. Part Number Top Mark Package Packing Method
NC7SZ04 TinyLogic UHS Inverter Features Ultra-High Speed: t PD 2.4ns (Typical) into 50pF at 5 CC High Output Drive: ±24mA at 3 CC Broad CC Operating Range: 1.65 to 5.5 Matches Performance of LCX w hen
More informationFDC655BN Single N-Channel, Logic Level, PowerTrench MOSFET
FC655BN Single N-Channel, Logic Level, PowerTrench MOSFET 3 V, 6.3 A, 5 mω Features Max r S(on) = 5 mω at V GS = V, I = 6.3 A Max r S(on) = 33 mω at V GS =.5 V, I = 5.5 A Fast switching Low gate charge
More informationElectrical Characteristics T C = 5 C unless otherwise noted Symbol Parameter Test Conditions Min Typ Max Units Off Characteristics BS Drain-Source Bre
FQD8P10TM-F085 100V P-Channel MOSFET General Description These P-Channel enhancement mode power field effect transistors are produced using ON Semiconductor s proprietary, planar stripe, DMOS technology.
More informationFDD8444L-F085 N-Channel PowerTrench MOSFET
M E N FDD8444L-F85 N-Channel PowerTrench MOSFET 4V, 5A, 6.mΩ Features Applications Typ r DS(on) = 3.8mΩ at V GS = 5V, I D = 5A Automotive Engine Control Typ Q g(tot) = 46nC at V GS = 5V Powertrain Management
More informationIs Now Part of. To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note: As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers
More informationIs Now Part of To learn more about ON Semiconductor, please visit our website at
Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
More informationFPF2498. Adjustable OVP with 28 V Input OVT Load Switch. Cellular Phones, Smart Phones Tablets. FPF2498 Evaluation Board
Adjustable OVP with 28 V Input OVT Load Switch Description The advanced load management switch targets applications requiring a highly integrated solution. It disconnects loads powered from the DC power
More informationN-Channel PowerTrench MOSFET
FDBL8636-F85 N-Channel PowerTrench MOSFET 8 V, 3 A,.4 mω Features Typical R DS(on) =. mω at V GS = V, I D = 8 A Typical Q g(tot) = 72 nc at V GS = V, I D = 8 A UIS Capability RoHS Compliant Qualified to
More informationApplications. Inverter H-Bridge. G1 S1 N-Channel. S1 Dual DPAK 4L
FDD35H Dual N & P-Channel PowerTrench MOSFET N-Channel: V, 3.9A, mω P-Channel: -V, -9.A, 9mΩ Features Q: N-Channel Max r DS(on) = mω at V GS = V, I D =.3A Max r DS(on) = mω at V GS = V, I D =.A : P-Channel
More informationNTMFD4C20N. Dual N-Channel Power MOSFET. 30 V, High Side 18 A / Low Side 27 A, Dual N Channel SO8FL
NTMFDCN Dual N-Channel Power MOSFET 3 V, High Side A / Low Side 7 A, Dual N Channel SOFL Features Co Packaged Power Stage Solution to Minimize Board Space Minimized Parasitic Inductances Optimized Devices
More informationNTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723
NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)
More informationNCV8440, NCV8440A. Protected Power MOSFET. 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection
Protected Power MOSFET 2.6 A, 52 V, N Channel, Logic Level, Clamped MOSFET w/ ESD Protection Features Diode Clamp Between Gate and Source ESD Protection Human Body Model 5 V Active Over Voltage Gate to
More informationPackage Marking and Ordering Information Device Marking Device Package Reel Size Tape Width Quantity V36P ISL9V36P3-F8 TO-22AB Tube N/A Electrical Cha
ISL9V36P3-F8 EcoSPARK mj, 36V, N-Channel Ignition IGBT General Description The ISL9V36P3_F8 is the next generation IGBT that offer outstanding SCIS capability in the TO-22 plastic package. This device
More informationL21. Part Number Top Mark Package Packing Method
BAS1 Small Signal Diode BAS1 Small Signal Diode 1 SOT-2 2 L21 1 2 Connection Diagram 1 2 Ordering Information Part Number Top Mark Package Packing Method BAS1 L21 SOT-2 L Tape and eel, 7 inch eel, 000
More information