Fuji High Power IGBT Module
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1 Fuji High Power IGBT Module Industrial Application Div. Semiconductors Group Fuji Electric Device Technology Co., Ltd.
2 Fuji High Power IGBT Modules 6in1 PKG type: EconoPack-Plus 1in1 PKG type: M142 2in1 PKG type: M248 1in1 PKG type: M143
3 Features 1. High voltage and high current line-up 2. Low on-state voltage 3. Fast switching and low loss characteristics 4. Low inductance package design 5. Easy Parallel connection
4 1. High voltage and high current line-up 1in1 : 1200V,1700V / 1200A,1600A,2400A,3600A 2in1 : 1700V / 600A,800A,1200A 6in1: 1200V,1700V/ (150A),225A,300A,450A 2. Low on-state voltage VCE(sat)=2.0V, 2in1 (1in1 1200V-1200A device, rating current, 125, typical value) VCE(sat) VF Ic (A) RT 125 Ic (A) RT VCE(sat) (V) VCE(sat) (V)
5 3. Fast switching and low loss characteristics Test conditions : Tj=125, Vcc=600V,RG=0.8ohm, VGE=+/-15V,Ls 65nH Turn-on wave form (1in1 1200V-1200A device) Turn-off wave form (1in1 1200V-1200A device) (time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div) (time:500ns/div, VGE:20V/div, VCE:200V/div, Ic:400A/div) 4. Low inductance package design Main terminal inductance(between collector and emitter) : 12nH 1in1 M142 PKG.
6 1200V 5 th Gen.(U-series) Losses comparison Ed=600V,Iout=135Arms cosθ=0.85,λ=1,tj= W 100% 310W 104% 274W 92% Total losses(w) W 100% 111W 80% 108W 78% 207W 100% 199W 96% 181W 87% P rr P F P sw 50 0 P sat 2MBI300S -120 BSM300GM2MBI300UD 120DLC -120 Presumption 2MBI300S -120 BSM300GM2MBI300UD 120DLC -120 Presumption 2MBI300S -120 BSM300GM2MBI300UD 120DLC -120 Presumption f=1khz f=5khz f=15khz
7 Features of of FS-IGBT chip technology (1) Narrower distribution of characteristics (2) Positive temperature coefficient of on-voltage (3) Less temperature dependence of switching loss Easy to connect in parallel
8 Comparison of 1200V IGBT chips N-IGBT U-IGBT Type of IGBT Gate Structure Wafer Punch Through Type Planner Gate Epitaxial Wafer Field-Stop Type Trench Gate Floating Zone(FZ) Wafer Thickness 350 micrometers 130 micrometers Lifetime Control Electron Irradiation not needed
9 Progress of Fuji s 1200/1700V IGBT chip design structure G E G E G E n+ n+ p n- p n- n- n+ buffer C p + sub. C S-series U-series NPT- Structure FS Trench- Structure C N-series 1200V : Jan V : Mar V : V : 2002 Jul
10 Comparison of Vce(sat)distribution MBT150U-120 MBT100N-120 Ave V σ= n=
11 Comparison of current imbalance between U-series and N-series Von1 Von2 Ic1 Ic2 Von1<Von2 ΔVon=Von2 - Von1 Ic(ave.)=(Ic1+Ic2)/2 α=(ic 1/Ic(ave.) - 1) 100 Current imbalance proportion :α [%] (at 125C) Improvement of current imbalance proportion 1200V IGBT N-series U-series ΔVCE(sat) [V] (at 25C) [= Von2-Von1]
12 Maximum current in parallel connection IGBTs The worst case conditions where the entire current is concentrated into one module. I C = I C (max) I α = I C ( ave) α ( n 1) α C1 100 For example n=4, α=10%, Ic(max)=600A ΣI C = 2072A, Ic(ave)=518A
13 1in1 Package out line M142 M143 Tentative
14 1in1 Electrical and thermal characteristics Tentative Electrical properties Collector emitter voltage 1200V 1700V Collector current TC= A 1600A 2400A 3600A 1200A 1600A 2400A 3600A housing 140* * * * * * * *190 M142 M142 M143 M143 M142 M142 M143 M143 Peak collector current 2400A 3200A 4800A 7200A 2400A 3200A 4800A 7200A Vcesat VGE= 15V Tj= V typ 1.7V typ 1.7V typ 1.7V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ VGE= 15V Tj= 125 2V typ 2V typ 2V typ 2V typ 2.4V typ 2.4V typ 2.4V typ 2.4V typ VF- diode (chip) Tj= V typ 2.2V typ 2.2V typ 2.2V typ 2.0V typ 2.0V typ 2.0V typ 2.0V typ Gate threshold voltage Tj= V typ 6.2V typ 6.2V typ 6.2V typ 7.5V typ 7.5V typ 7.5V typ 7.5V typ Stray inductance module 12nH 12nH 10nH 10nH 12nH 12nH 10nH 10nH Stray inductance between 3-3.5nH 3-3.5nH 2.5-3nH 2.5-3nH 3-3.5nH 3-3.5nH 2.5-3nH 2.5-3nH Sense and main emitter Thermal properties Transistor RthJC Max. values 0.022K/W Diode RthJC Max. values 0.04K/W Max junction temperature Max. values Operation temperature Max. values
15 2in1 Package out line Tentative M248
16 2in1 Electrical and thermal characteristics Tentative Electrical properties Collector emitter voltage Collector current TC= A 1700V 800A 1200A Peak collector current 1200A 1600A 2400A Vcesat VGE= 15V Tj= V typ 2.0V typ 2.0V typ VGE= 15V Tj= V typ 2.4V typ 2.4V typ VF- diode Tj= V typ 2.0V typ 2.0V typ Gate threshold voltage Tj= V typ 7.5V typ 7.5V typ Stray inductance module 12nH 12nH 12nH Stray inductance between 3-3.5nH 3-3.5nH 3-3.5nH Sense and main emitter Thermal properties Transistor RthJC / arm Max. values 0.044K/W 0.032K/W 0.025K/W Diode RthJC / arm Max. values 0.08K/W 0.064K/W 0.042K/W Max junction temperature Max. values Operation temperature Max. values
17 Development road map of U-series U IGBT modules Road map of U-series IGBT modules 2003/ 2004/ Jan. Feb. Mar. Apr. May Jun. Jul. Aug. Sep. Oct. Nov. Dec. Jan. Feb. Mar. 600V Small Pack Small Pack (8~50A) PIM (EP) Econo PIM (30~100A) 7in1 7in1 (75~150A) ( 6in1 ) Econo Plus (300~400A) 2in1 2in1(150~600A) 1200V Small Pack Small Pack (10~15A) PIM (EP) Econo PIM (25~75A) 6in1 Econo Plus (225~450A) PC-Pack (50~150A) 2in1 2in1(75A~450A) 1in1(HM) 1in1(1200A~3600A) 1700V 6in1 Econo Plus (150~450A) 2in1(HM) 2in1(600A~1200A) 1in1(HM) 1in1(1200A~3600A) Oct
18 1in1 2in1 Engineering sample shipment schedule Sample ES (Engineering Sample) 1in A/1200V PKG.type:M A/1200V PKG.type:M A/1200V PKG.type:M A/1200V PKG.type:M A/1700V PKG.type:M A/1700V PKG.type:M A/1700V PKG.type:M A/1700V PKG.type:M143 ES (Engineering Sample) 2in1 1200A/1700V PKG.type:M A/1700V PKG.type:M A/1700V PKG.type:M248
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MBB4TX12A Silicon N-channel IGBT IGBT-SP-1714-R1 (P1/8) 1. FEATURES * High speed, low loss IGBT module. * Low driving power: Low input capacitance advanced IGBT. * Low thermal impedance due to direct liquid
Recreation Facility Hours
NORMAL HOURS Recreation Facility Hours August 1, 2016 July 31, 2017 Last Revised: July 29, 2016 Effective Dates 2016: AUG 23 31, SEP 1 2, SEP 6 16, SEP 18 23, SEP 25 30, OCT 1 7, OCT 9 18, OCT 24 30, NOV
Not Recommended. TSM V P-Channel MOSFET. PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) Features. Block Diagram. Application
SOP-8 Pin Definition: 1. Source 8. Drain 2. Source 7. Drain 3. Source 6. Drain 4. Gate 5. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 14 @ V GS = -10V -11-30 20 @ V GS = -4.5V -8.5 Features Advance
1200 V 600 A IGBT Module
1200 V 600 A IGBT RoHS Features Trench-gate field stop IGBT technology Low saturation voltage and positive temperature coefficient Fast switching and short tail current Free wheeling diodes with fast and
Icp 1ms TC=80 C 20 -Ic 10. IC Continuous TC=80 C 10 ICP 1ms TC=80 C 20
7MBRVKC IGBT MODULE (V series) V / A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
Ultra Low Quiescent Current 5V/150mA Fixed-Voltage Ultra Low LDO
Ultra Low Quiescent Current 5V/150mA Fixed-Voltage Ultra Low LDO DESCRIPTION TS4264 is a 5V low-drop fixed-voltage regulator in an SOT-223 package. The IC regulates an input voltage in the range of 5.5V
Icp 1ms TC=80 C 70 -Ic 35. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70
IGBT MODULE (V series) V / 35A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor Drive
InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHW20N120R3. Datasheet. IndustrialPowerControl
InductionHeatingSeries ReverseconductingIGBTwithmonolithicbodydiode IHWNR Datasheet IndustrialPowerControl IHWNR Reverse conducting IGBT with monolithic body diode Features: C Powerful monolithic body
STGW60H65FB STGWT60H65FB
STGW60H65FB STGWT60H65FB Trench gate field-stop IGBT, HB series 650 V, 60 A high speed Features Datasheet - production data TAB Maximum junction temperature: T J = 175 C High speed switching series Minimized
C Storage temperature Tstg -40 ~ +125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI6VD-6-5 IGBT MODULE (V series) 6V / 6A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Icp 1ms TC=80 C 100 -IC 50. IC Continuous TC=80 C 35 ICP 1ms TC=80 C 70. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VB1 IGBT MODULE (V series) 12V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
TSM2307CX 30V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain Key Parameter Performance Parameter Value Unit V DS -30 V V GS = -10V 95 R DS(on) (max) mω V GS = -4.5V 140 Q g 10 nc Features Advance Trench Process Technology
10 A, 600 V short-circuit rugged IGBT
10 A, 600 V short-circuit rugged IGBT Datasheet - production data Features Lower on voltage drop (VCE(sat)) Lower CRES / CIES ratio (no cross-conduction susceptibility) Very soft ultra fast recovery antiparallel
TSM V P-Channel MOSFET
SOT-26 Pin Definition: 1. Drain 6. Drain 2. Drain 5, Drain 3. Gate 4. Source PRODUCT SUMMARY V DS (V) R DSON (mω) I D (A) 20 60 @ VGS = -4.5V -4.7 100 @ VGS = -2.5V -3.8 Features Advance Trench Process
IGBT STARPOWER GD75HFU120C1S SEMICONDUCTOR TM. Molding Type Module. 1200V/75A 2 in one-package. General Description. Features. Typical Applications
STARPOWER SEMICONDUCTOR TM IGBT GD75HFU120C1S Molding Type Module 1200V/75A 2 in one-package General Description STARPOWER IGBT Power Module provides ultra low conduction loss as well as short circuit
TSM6866SD 20V Dual N-Channel MOSFET
TSSOP-8 Pin Definition: 1. Drain 1 8. Drain 2 2. Source 1 7. Source 2 3. Source 1 6. Source 2 4. Gate 1 5. Gate 2 PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 30 @ V GS = 4.5V 6.0 20 40 @ V GS = 2.5V
C Storage temperature Tstg -40 ~ 125 Isolation voltage between terminal and copper base (*1) Viso AC : 1min VAC Screw torque
2MBI75VA-12-5 IGBT MODULE (V series) 12V / 75A / 2 in one package Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and DC Servo Drive
XI'AN IR-PERI Company
FineSiliconPowerNetworks HALF-BRIDGE IGBT Features Applications IGBT NPT Technology AC & DC Motor controls VCES = 1200V Ic = 75A VCE(ON) typ. = 2.8V @ Ic = 75A 10μs Short circuit capability Low turn-off
Icp 1ms TC=80 C 200 -IC 100. IC Continuous TC=80 C 50 ICP 1ms TC=80 C 100. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR1VB65 IGBT MODULE (V series) 6V / 1A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for
N-Channel Power MOSFET 100V, 160A, 5.5mΩ
N-Channel Power MOSFET 100V, 160A, 5.5mΩ FEATURES Advanced Trench Technology Low R DS(ON) 5.5mΩ (Max.) Low gate charge typical @ 154nC (Typ.) Low Crss typical @ 260pF (Typ.) KEY PERFORMANCE PARAMETERS
ABB HiPak. IGBT Module 5SNA 2400E VCE = 1700 V IC = 2400 A
VCE = 7 V IC = 24 A ABB HiPak IGBT Module 5SNA 24E7 Low-loss, rugged SPT chip-set Smooth switching SPT chip-set for good EMC Industry standard package High power deity AlSiC base-plate for high power cycling
Tc=100 C 300 Tc=25 C 360 Collector current
2MBI3VH-12-5 IGBT MODULE (V series) 12V / 3A / 2 in one package Inverter Inverter Features High speed switching Voltage drive Low Inductance module structure Applications Inverter for Motor Drive AC and
Item Symbol Unit MBN1800FH33F Collector Emitter Voltage V CES V 3,300 Gate Emitter Voltage V GES V 20 Collector Current
MBN8FH33F Spec.No.IGBT-SP-62 R P Silicon N-channel IGBT 33V F version FATURS Soft switching behavior, low switching loss & low conduction loss : Soft low-injection punch-through Advanced Trench High conductivity
Icp 1ms TC=80 C 50 -IC 25. IC Continuous TC=80 C 25 ICP 1ms TC=80 C 50. Inverter, Brake 175 Converter 150 Operating junciton temperature
7MBR5VA5 IGBT MODULE (V series) V / 5A / PIM Features Low VCE(sat) Compact Package P.C.Board Mount Module Converter Diode Bridge Dynamic Brake Circuit RoHS compliant product Applications Inverter for Motor
N-Channel Power MOSFET 100V, 81A, 10mΩ
N-Channel Power MOSFET 100V, 81A, 10mΩ FEATURES Advanced Trench Technology 100% avalanche tested APPLICATION Synchronous Rectification in SMPS High Speed Power Switching KEY PERFORMANCE PARAMETERS PARAMETER
D AB Z DETAIL "B" DETAIL "A"
QID1215 Preliminary Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 (72) 925-7272 www.pwrx.com Split Dual Si/SiC Hybrid IGBT Module 1 Amperes/12 Volts Y A AA F D AB Z AC Q DETAIL "B" Q
Value Parameter Symbol Conditions
Ordering number : ENA2283A NGTB10N60FG N-Channel IGBT 600V, 10A, VCE(sat);1.5V, TO-220F-3FS http://onsemi.com Features IGBT VCE (sat)=1.5v typ. (IC=10A, VGE=15V) IGBT IC=20A (Tc=25 C) Adaption of full
TSM V P-Channel MOSFET
SOT-23 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY V DS (V) R DS(on) (mω) I D (A) 39 @ V GS = -4.5V -4.7-20 52 @ V GS = -2.5V -4.1 68 @ V GS = -1.8V -2.0 Features Advance Trench Process