T24_vg1.8_disk. 11WNSDVG1.8 CLIC_G GHz measurements versus simulations. A. Grudiev CERN
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1 T24_vg1.8_disk 11WNSDVG1.8 CLIC_G GHz measurements versus simulations A. Grudiev CERN
2 Acknowledgements CERN: M. Gerbaux R. Zennaro A. Olyunin W. Wuensch SLAC: Z. Li
![First cell E s /E a H s /E a S c /E 2 a a [mm] 3.37 d [mm] 1.753 e 1.16 f [GHz] 11.](/docs-images/79/79163666/images/3-0.jpg "433 Q(Cu) 6814 vg/c [%] 1.83 r /Q [Linac /m] 15198 Es/Ea 1.95 Hs/Ea [ma/v] 2.")
3 First cell E s /E a H s /E a S c /E 2 a a [mm] 3.37 d [mm] e 1.16 f [GHz] Q(Cu) 6814 vg/c [%] 1.83 r /Q [Linac /m] Es/Ea 1.95 Hs/Ea [ma/v] 2.6 Sc/Ea 2 [ma/v].37
4 Middle cell E s /E a H s /E a S c /E 2 a a [mm] d [mm] 1.42 e 1.15 f [GHz] Q(Cu) 698 vg/c [%] 1.33 r /Q [Linac /m] 1696 Es/Ea 1.95 Hs/Ea [ma/v] 2.45 Sc/Ea 2 [ma/v].34
5 Last cell E s /E a H s /E a S c /E 2 a a [mm] d [mm] 1.5 e 1.13 f [GHz] Q(Cu) 7157 vg/c [%].92 r /Q [Linac /m] Es/Ea 1.9 Hs/Ea [ma/v] 2.3 Sc/Ea 2 [ma/v].28
6 Gradient in 24 regular cells P [MW] (black), E s (green), E a (red) [MV/m], T [K] (blue), S c *5 [MW/mm 2 ] (magenta) Average unloaded of 1 MV/m load P in = 41.1 MW, load Pout = 23.4 MW Eff =. % t r =. ns, t f =. ns, t p = 1. ns iris number P [MW] (black), E s (green), E a (red) [MV/m], T [K] (blue), S c *5 [MW/mm 2 ] (magenta) Average loaded of 1 MV/m load P in = 56.4 MW, load Pout = 14.7 MW Eff = 28.9 % t r = 2.7 ns, t f = 54.8 ns, t p = ns iris number dp dz Qv g P v g R' Q I P 1 2 Number of regular cells: Nc 24 Bunch population: N 3.72x1 9 Number of bunches: Nb 312 Bunch separation: Ncycl 6 rf cycles 6
7 Simulation setup 1 & 2 HFSS-quad HFSS simulation of ¼ of the structure: Surface conductivity (Cu): 58e6 S/m Surface approximation: ds=6 m, Total number of tetrahedra: Ntetr = Mesh density: ~ 4 tetr / ¼ cell HFSS v1.1 S3P-quad S3P simulation of ¼ of the structure made by Zenghai Li at SLAC-ACD Surface conductivity (Cu): 57e6 S/m different
8 Simulation setup 3 HFSS-cells + couplers HFSS simulation of ¼ of input coupler + segment of 5 deg. of the cells + ¼ of output coupler : Surface conductivity (Cu): 58e6 S/m Surface approximation: ds=1 m, Total number of tetrahedra for cells: Ntetr = 5675 Mesh density: ~ 35 tetr / ¼ cell (1 times higher than in HFSS-quad setup) HFSS v11.1
9 Measurement setup 1 (reflections) VNA port1 1 Perfect load VNA port2 Reflection = S11+S12 Perfect load Frequency correction due to air ( = 1.59) Frequency in vacuum: f = f*sqrt(1.59) f X-band
10 Reflection: comparison Input measurement (Vac) HFSS-cells HFSS-quad S3P-quad mode launcher Output measurement (Vac) HFSS-cells HFSS-quad S3P-quad mode launcher Reflection [db] Reflection [db] f [GHz] f [GHz] There is very small (~1MHz) or no difference in frequency between simulations and the air corrected measurements
11 Measurement setup 2 (transmission) VNA port1 Perfect load 1 4 Perfect load 2 3 Perfect load Transmission = S13+S23 VNA port2 Perfect load VNA port1 VNA port2
12 Transmission: comparison -2.4 Transmision [db] measurement (Vac) HFSS-cells HFSS-quad S3P-quad There is small difference between HFSS and S3P simulation results due to different conductivity used in the simulations Both simulation results show higher transmission than air corrected measurements by about.2 db f [GHz]
13 Some useful equations P out P in e 2 where ln S 12 attenuation On the other hand P t f d ( arg d ) - filling time W - stored energy in lossy structure W out P W P in in e t Q f where Q - average - stored energy in lossfree structure Finally t Q f 2 S 12 W P loss quality factor group delay
14 Transmission: comparing group delay measurement (Vac) HFSS-cells S3P-quad There is no difference between both HFSS and S3P simulations and the air corrected measurements d /d [ns] f [GHz]
15 Transmission: comparing Q-factor Q There is no difference in Q-factor (~7) between HFSS and S3P simulations. The measured Q-factor of about 66 is lower than the simulated value by about 6 % measurement: (Vac) HFSS-cells S3P-quad f [GHz]
16 Measurement setup 3 (bead pull) VNA port1 1 Perfect load VNA port2 E 2 ~ S11-<S11> Perfect load
17 ImS11 ImS11 ImS11 ImS f= GHz f= GHz f= GHz Bead pull in complex plane Measurements: S11-<S11> f= GHz ReS f= GHz f= GHz f= GHz f= GHz ReS f=11.42 GHz f= GHz f= GHz ReS11 ImEz [kv/m] ImEz [kv/m] ImEz [kv/m] ImEz [kv/m] 5 f=11.42 GHz f= GHz f= GHz f= GHz ReEz [kv/m] 5 f= GHz f= GHz f= GHz HFSS-cells: E f=11.43 GHz ReEz [kv/m] 5 f= GHz f= GHz f= GHz f= GHz ReEz [kv/m]
18 Bead pull: field magnitude Measurements: sqrt(s11-<s11>) f= GHz f= GHz f= GHz HFSS-cells: E f=11.42 GHz f= GHz f= GHz Ez [a.u.] Ez [kv/m] f= GHz f= GHz f=11.42 GHz 1 2 f= GHz 1 2 f= GHz 1 2 f= GHz Ez [a.u.] Ez [kv/m] f= GHz f= GHz f= GHz 1 2 f= GHz 1 2 f= GHz 1 2 f= GHz Ez [a.u.] Ez [a.u.] f= GHz z [a.u.] f= GHz z [a.u.] z [a.u.] Ez [kv/m] Ez [kv/m] f= GHz 1 2 z [mm] f=11.43 GHz 1 2 z [mm] f= GHz 1 2 z [mm]
19 Field distribution at different frequencies 1.2 Ez [a.u.] HFSS-cells: f= GHz measurement: f= GHz 12 o rf phase advance per cell frequency GHz.2 Ez [a.u.] z [mm] 1.2 HFSS-cells: f=11.42 GHz measurement: f= GHz Best match frequency GHz z [mm]
20 RF phase advance per cell at different frequencies o rf phase advance per cell frequency: GHz dphi [deg] measurement: f= GHz HFSS-cells: f= GHz S3P-quad: f= GHz niris 4 2 measurement: f= GHz HFSS-cells: f=11.42 GHz Best match frequency: GHz dphi [deg] niris
21 Summary table for T24_vg1.8_disk Measure ments (Vac) S12 Pout/ Pin =.5ln (Pout/ Pin) tf=d / [ns] tf=w /Pin [ns] Q= tf/2 Q= W /(Pin- Pout) HFSS ¼ HFSS InCoup OutCoup Cells cells model S3P (SLAC) <- < =57e6) 6988 =58e6) Q= W /Ploss Pin1 24 cells [MW] 42.4
22 Summary on comparison Simulation results of HFSS and S3P show very good agreement Q-factor All 3 different ways of calculating Q-factor: S3P, HFSS-S-parameter solver and HFSS-eigenmode solver give very close values of about 7 The measurements of the T24_vg1.8_disk structure made at CERN show 6 % lower Q-factor of 66 RF phase advance Both HFSS and S3P simulations and air corrected measurements simulations show 12 o rf phase advance frequency of GHz which is the design frequency Good agreement (±.5 MHz) between simulations and measurements demonstrates extremely high (sub-micron) precision of machining. For example, it is equivalent to ±.6 m tolerance on the outer wall radius RF phase advance Structure matching There is a design error in structure matching of about 4 MHz. The match frequency is GHz. To some extent this is also in agreement with the measurements
23 HFSS S-par solver: v1.1 versus v11.1
24 Simulation setup 4 HFSS-cells + couplers HFSS simulation of ¼ of input coupler + segment of the cells made in HFSS by 5 deg. Sweep (3D geometry created in HFSS) + ¼ of output coupler : Surface conductivity (Cu): 58e6 S/m Surface approximation: ds=1 m, HFSS v11.1 versus HFSS v1.1
25 Reflection -5-1 Input HFSS1 HFSS11 S3P -5-1 Output HFSS1 HFSS11 S3P Reflection [db] Reflection [db] f [GHz] f [GHz] 4 MHz 4 MHz
26 Transmission 4 MHz HFSS1 HFSS11 S3P -2.6 Transmision [db] f [GHz]
27 Group delay and Q-factor HFSS1 HFSS11 S3P HFSS1 HFSS11 S3P d /d [ns] 6 58 Q f [GHz] f [GHz]
28 ImEz [kv/m] ImEz [kv/m] 5 f=11.42 GHz f= GHz f= GHz RF phase advance per cell HFSS v1.1 HFSS v f= GHz f= GHz f= GHz 5 f= GHz f= GHz f= GHz ImEz [kv/m] ImEz [kv/m] f=11.42 GHz f= GHz f= GHz f= GHz f= GHz f= GHz f= GHz f= GHz f= GHz ImEz [kv/m] ImEz [kv/m] f= GHz 5 f=11.43 GHz 5 f= GHz 5 f= GHz 5 f=11.43 GHz 5 f= GHz ImEz [kv/m] ReEz [kv/m] ReEz [kv/m] ReEz [kv/m] ImEz [kv/m] ReEz [kv/m] ReEz [kv/m] ReEz [kv/m]
29 Summary on HFSS It seems that there is a bug in HFSS v11. The results of the simulations using HFSS v11 are shifted up in frequency by 4 MHz with respect to the results of the simulations using HFSS v1 or S3P Use HFSS-S-parameter solver VERSION 1 or S3P
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