FERROXCUBE DATA SHEET. P11/7 P cores and accessories. Supersedes data of September Sep 01
|
|
- Nathan Lloyd
- 6 years ago
- Views:
Transcription
1 FERROXCUBE DATA SHEET P11/7 P cores and accessories Supersedes data of September Sep 1
2 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1).956 mm 1 V e effective volume 251 mm 3 I e effective length 15.5 mm A e effective area 16.2 mm 2 A min minimum area 13.2 mm 2 m mass of set 1.8 g O O max MGC15 M1.4 Fig.1 P11/7 core set. Core sets for filter applications Clamping force for A L measurements, 35 ±1 N. GRADE A L (nh) µ e TOTAL AIR GAP (µm) (WITH NUT) (WITHOUT NUT) 3D3 16 ±3% P11/7-3D3-E16/N P11/7-3D3-E16 25 ±3% P11/7-3D3-E25/N P11/7-3D3-E25 4 ±3% P11/7-3D3-E4/N P11/7-3D3-E4 63 ±3% 48 4 P11/7-3D3-E63/N P11/7-3D3-E63 1 ±3% P11/7-3D3-A1/N P11/7-3D3-A1 8 ±25% 61 P11/7-3D3 3H3 16 ±3% P11/7-3H3-A16/N P11/7-3H3-A16 25 ±3% 19 8 P11/7-3H3-A25/N P11/7-3H3-A ±25% 126 P11/7-3H3 28 Sep 1 935
3 Core sets for general purpose transformers and power applications Clamping force for A L measurements, 35 ±1 N. GRADE Core sets of high permeability grades Clamping force for A L measurements, 35 ±1 N. Properties of core sets under power conditions Note 1. Measured at 6 C. A L (nh) µ e AIR GAP (µm) 3C81 1 ±3% P11/7-3C81-A1 16 ±3% P11/7-3C81-A16 25 ±3% P11/7-3C81-A25 25 ±25% 156 P11/7-3C81 3C91 25 ±25% 156 P11/7-3C91 3F3 1 ±3% P11/7-3F3-A1 16 ±3% P11/7-3F3-A16 25 ±5% 19 8 P11/7-3F3-A ±25% 126 P11/7-3F3 GRADE A L (nh) µ e AIR GAP (µm) 3E27 34 ±25% 26 P11/7-3E27 B(mT)at CORELOSS(W)at GRADE H=25A/m; f = 25 khz; f=1khz; f=1khz; f = 4 khz; f = 25 khz; Bˆ =2mT; Bˆ =1mT; Bˆ = 2 mt; Bˆ =5mT; T = 1 C T = 1 C T=1 C T = 1 C T = 1 C 3C C (1).12 (1) 3F Sep 1 936
4 INDUCTANCE ADJUSTERS General data PARAMETER SPECIFICATION handbook, halfpage O Material of head and thread Maximum operating temperature polypropylene (PP), glass fibre reinforced 125 C M min MGC151 Fig.2 P11/7 inductance adjuster. Inductance adjuster selection chart (applies to all types) GRADE A L (nh) TYPES FOR LOW ADJUSTMENT Note 1. Maximum adjustment range. L/L (1) TYPES FOR MEDIUM ADJUSTMENT L/L (1) TYPES FOR HIGH ADJUSTMENT 3H3 1 ADJ-P9/P11-YELLOW 13 ADJ-P9/P11-BROWN ADJ-P9/P11-YELLOW 8 ADJ-P9/P11-BROWN 15 ADJ-P9/P11-GREY ADJ-P9/P11-BROWN 9 ADJ-P9/P11-GREY 14 3D3 16 ADJ-P9/P11-YELLOW ADJ-P9/P11-YELLOW 3 4 ADJ-P9/P11-YELLOW ADJ-P9/P11-YELLOW 18 1 ADJ-P9/P11-YELLOW 11 L/L (1) 28 Sep 1 937
5 COIL FORMERS General data CP-P11/7-1S coil former PARAMETER Coil former material Maximum operating temperature SPECIFICATION polybutyleneterephtalate (PBT), glass reinforced, flame retardant in accordance with UL 94V- ; UL file number E45329 (R) 155 C, IEC 685, class F dbook, full pagewidth CBW599 Fig.3 Coil former: CP-P11/7-1S. Winding data and area product for CP-P11/7-1S coil former NUMBER OF SECTIONS WINDING AREA (mm 2 ) MINIMUM WINDING WIDTH (mm) AVERAGE LENGTH OF TURN (mm) AREA PRODUCT Ae x Aw (mm 4 ) CP-P11/7-1S 28 Sep 1 938
6 General data for CP-P11/7-A coil former PARAMETER SPECIFICATION Coil former material acetal (POM), glass reinforced, flame retardant in accordance with UL 94-HB ; UL file number E66288(R) Maximum operating temperature 15 C handbook, full pagewidth 4.8 min 4.2 max 1.6 min max MGB528 Fig.4 Coil former: CP-P11/7-A. Winding data and area product for CP-P11/7-A coil former NUMBER OF SECTIONS MINIMUM WINDING AREA (mm 2 ) NOMINAL WINDING WIDTH (mm) AVERAGE LENGTH OF TURN (mm) AREA PRODUCT Ae x Aw (mm 4 ) CP-P11/7-1S-A x 32.4 CP-P11/7-2S-A x 18.8 CP-P11/7-3S-A 28 Sep 1 939
7 MOUNTING PARTS General data ITEM REMARKS FIGURE Tag plate material: phenolformaldehyde (PF), glass reinforced 5 TGP-P11/7-C flame retardant: in accordance with UL 94V- ; file number E41429 maximum operating temperature: 18 C, IEC 685, class H pins : copper-tin alloy (CuSn), tin (Sn) plated resistance to soldering heat in accordance with IEC , Part 2, Test Tb, method 1B: 35 C, 3.5 s solderability in accordance with IEC , Part 2, Test Ta, method 1: 235 C, 2 s Container copper-zinc alloy (CuZn), tin (Sn) plated 6 CON-P11/7 earth pins: presoldered Spring CrNi-steel 7 SPR-P11/7 spring force: 35 N when mounted Clamp spring steel, tin-plated 7 CLM/TP-P11/ max O 2.4 O MGC153 Fig.5 P11/7 tag plate. 28 Sep 1 94
8 andbook, full pagewidth mark max. 7.5 max. 1 min max. CBW6 Fig.6 Container: CON-P11/7. handbook, halfpage max MGC155 Fig.7 Spring: SPR-P11/7. 28 Sep 1 941
9 handbook, halfpage 7 ±.25 4 ± ± ± ±.25 5 ± ± ±.25 MGB67 Fig.7 Clamp: CLM/TP-P11/7. 28 Sep 1 942
10 DATA SHEET STATUS DEFINITIONS DATA SHEET STATUS Preliminary specification PRODUCT STATUS Development DEFINITIONS This data sheet contains preliminary data. Ferroxcube reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. Product specification Production This data sheet contains final specifications. Ferroxcube reserves the right to make changes at any time without notice in order to improve design and supply the best possible product. DISCLAIMER Life support applications These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Ferroxcube customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Ferroxcube for any damages resulting from such application. PRODUCT STATUS DEFINITIONS STATUS INDICATION DEFINITION Prototype Design-in Preferred Support These are products that have been made as development samples for the purposes of technical evaluation only. The data for these types is provisional and is subject to change. These products are recommended for new designs. These products are recommended for use in current designs and are available via our sales channels. These products are not recommended for new designs and may not be available through all of our sales channels. Customers are advised to check for availability. 28 Sep 1 943
FERROXCUBE DATA SHEET. E30/15/7 E cores and accessories. Supersedes data of November Feb 01
FERROXCUBE DATA SHEET E3/15/7 Supersedes data of November 2 22 Feb 1 E3/15/7 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 1.12 mm 1 V e effective volume 4 mm
More informationFERROXCUBE. RM10/I RM cores and accessories. Supersedes data of February Sep 01
FERROXCUBE DATA SHEET RM1/I Supersedes data of February 22 24 Sep 1 RM1/I CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1).462 mm 1 V e effective volume 431 mm 3
More informationFERROXCUBE DATA SHEET. RM8/I RM, RM/I, RM/ILP cores and accessories. Supersedes data of September Sep 01
FERROXCUBE DATA SHEET RM, RM/I, RM/ILP cores and accessories Supersedes data of September 24 28 Sep 1 CORE SETS Effective core parameters SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1).64 mm 1 V e
More informationFERROXCUBE DATA SHEET. E32/6/20/R Planar E cores and accessories. Supersedes data of September Sep 01
FERROXCUBE DATA SHEET Supersedes data of September 2004 2008 Sep 01 CORES Effective core parameters of an E/PLT combination SYMBOL PARAMETER VALUE UNIT Σ(I/A) core factor (C1) 0.278 mm 1 V e effective
More informationFERROXCUBE DATA SHEET. SMD common mode chokes EMI-suppression products. Supersedes data of September Sep 01
FERROXCUBE DATA SHEET Supersedes data of September 2004 2008 Sep 01 SMD COMMON MODE CHOKES FOR EMI-SUPPRESSION General data ITEM Strip material Solderability Taping method SPECIFICATION copper (Cu), tin
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLT70 UHF power transistor. Product specification 1996 Feb 06
DISCRETE SEMICONDUCTORS DATA SHEET 1996 Feb 6 FEATURES Very high efficiency Low supply voltage. APPLICATIONS 4 Hand-held radio equipment in common emitter class-ab operation in the 9 MHz communication
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZV86 series Low-voltage stabistors Mar 21. Product specification Supersedes data of April 1992
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of April 1992 1996 Mar 21 FEATURES Low-voltage stabilization Forward voltage range: 1.4 to 3.2 V Total power dissipation:. 330 mw Differential
More informationDATA SHEET. BFR93AW NPN 5 GHz wideband transistor DISCRETE SEMICONDUCTORS Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of November 99 File under Discrete Semiconductors, SC4 99 Sep 8 FEATURES High power gain Gold metallization ensures excellent reliability SOT33 (S-mini)
More informationDISCRETE SEMICONDUCTORS DATA SHEET. handbook, 2 columns M3D118. BY328 Damper diode Sep 30. Product specification Supersedes data of May 1996
DISCRETE SEMICONDUCTORS DATA SHEET handbook, 2 columns M3D118 Supersedes data of May 1996 1996 Sep 30 FEATURES Glass passivated High maximum operating temperature Low leakage current Excellent stability
More informationDATA SHEET. BY614 Miniature high-voltage soft-recovery rectifier DISCRETE SEMICONDUCTORS Sep 26
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D189 Miniature high-voltage soft-recovery Supersedes data of May 1996 File under Discrete Semiconductors, SC01 1996 Sep 26 FEATURES Glass passivated
More informationDATA SHEET. BAV23 General purpose double diode DISCRETE SEMICONDUCTORS Sep 17. Product specification Supersedes data of April 1996
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D7 Supersedes data of April 996 996 Sep 7 FEATURES Small plastic SMD package Switching speed:. 5 ns General application Continuous reverse voltage:.
More informationEP5 - a new telecom core size
A Y A G E O C O M P A N Y EP5 - a new telecom core size In modern Telecom applications like ISDN and DSL ferrite-cored pulse and wideband transformers play an important role. These transformers provide
More informationDATA SHEET. 1N5225B to 1N5267B Voltage regulator diodes DISCRETE SEMICONDUCTORS Apr 26. Product specification Supersedes data of April 1992
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of April 1992 1996 Apr 26 FEATURES Total power dissipation: max. 500 mw Tolerance series: ±5% Working voltage range: nom. 3.0 to 75 V Non-repetitive
More informationDATA SHEET. 2N3553 Silicon planar epitaxial overlay transistor DISCRETE SEMICONDUCTORS Oct 27
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of October 1981 File under Discrete Semiconductors, SC8a 1995 Oct 27 APPLICATIONS The is intended for use in VHF and UHF transmitting applications. DESCRIPTION
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLT53 UHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET May 99 FEATURES Emitter-ballasting resistors for an optimum temperature profile Gold metallization ensures excellent reliability Withstands full load mismatch. DESCRIPTION
More informationTopic 4 Practical Magnetic Design: Inductors and Coupled Inductors
Topic 4 Practical Magnetic Design: Inductors and Coupled Inductors Louis Diana Agenda Theory of operation and design equations Design flow diagram discussion Inductance calculations Ampere s law for magnetizing
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFG97 NPN 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 September 1995 DESCRIPTION NPN planar epitaxial transistor mounted in a plastic SOT223 envelope. It features excellent output
More informationDATA SHEET. 2N5415; 2N5416 PNP high-voltage transistors DISCRETE SEMICONDUCTORS May 21
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D111 Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1997 May 21 FEATURES Low current (max. 200 ma) High voltage (max. 300
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLV58 UHF linear push-pull power transistor
DISCRETE SEMICONDUCTORS DATA SHEET UHF linear push-pull power transistor September 1991 FEATURES High power gain Double stage internal input matching for high input impedance Diffused emitter-ballasting
More informationDATA SHEET. BYD71 series Ultra fast low-loss controlled avalanche rectifiers DISCRETE SEMICONDUCTORS Sep 19
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MD Supersedes data of 996 May 4 File under Discrete Semiconductors, SC 996 Sep 9 FEATURES Glass passivated High maximum operating temperature Low leakage
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D302. BZA418A Quadruple ESD transient voltage suppressor. Product specification 2002 Sep 02
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 Quadruple ESD transient voltage suppressor 2002 Sep 02 FEATURES PINNING ESD rating >8 kv, according to IEC1000-4-2 SOT457 surface mount package
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFG135 NPN 7GHz wideband transistor. Product specification 1995 Sep 13
DISCRETE SEMICONDUCTORS DATA SHEET 1995 Sep 13 DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The small emitter structures,
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAP70-02 Silicon PIN diode. Product specification Supersedes data of 2002 Jul 02.
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Supersedes data of 2002 Jul 02 2002 Aug 06 FEATURES High voltage, current controlled RF resistor for attenuators Low diode capacitance Very low series inductance.
More information3D COIL 15x15 10mH ±5% 125 KHz SMD DROP RESISTANT TRANSPONDER 3D COIL 15.9x15.9 mm
1/7 3D COIL 15x15 10mH ±5% 125 KHz SMD DROP RESISTANT TRANSPONDER 3D COIL 15.9x15.9 mm Made by: Sergio Cobos Checked by: S. Cobos Approved by: F. Bustos Date: 20/02/12 Date: 20/02/12 Date: 12/03/2012 Signature:
More informationDATA SHEET. PBSS4160T 60 V, 1 A NPN low V CEsat (BISS) transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Jun 24
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D88 Supersedes data of 23 Jun 24 24 May 2 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High
More informationTDA3603 Multiple voltage regulator with switch
Multiple voltage regulator with switch Supersedes data of 1995 Oct 04 File under Integrated Circuits, IC01 1997 Aug 15 FEATURES General One V P state controlled regulator (regulator 2) Regulator 2, reset
More informationSMT Inductors SIMID 1812-T B82432-T. Data Sheet
SMT Inductors Data Sheet Size 1812 (EIA) or 4532 (IEC) Rated inductance 1,0 to 1000 µh Rated current 70 to 1300 ma Construction Upright ferrite drum core Laser-welded winding Flame-retardant encapsulation
More informationDATA SHEET. BGA2776 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Very wide frequency range Very flat gain High gain High output power Unconditionally
More informationDATA SHEET. BGA2771 MMIC wideband amplifier DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Aug 06.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 21 Oct 19 22 Aug 6 FEATURES Internally matched Wide frequency range Very flat gain High output power High linearity Unconditionally
More informationDATA SHEET. BC847BPN NPN/PNP general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET andbook, halfpage MBD128 NPN/PNP general purpose transistor Supersedes data of 1999 Apr 26 2001 Oct 26 FEATURES Low collector capacitance Low collector-emitter saturation
More informationDATA SHEET. CR2424S Video driver hybrid amplifier DISCRETE SEMICONDUCTORS Oct 23
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 995 Apr 04 File under Discrete Semiconductors, SC05 995 Oct 23 FEATURES Typical transition times (0 to 90%) with C L at 8.5 pf: 2.2 ns rise and 2.0
More informationPlanar PIN diode in a SOD882 leadless ultra small SMD plastic package. Pin Description Simplified outline Symbol 1 cathode
Rev. 01 11 March 2005 Product data sheet 1. Product profile 1.1 General description Planar PIN diode in a SOD882 leadless ultra small SMD plastic package. 1.2 Features High speed switching for RF signals
More informationDATA SHEET. 2N5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 08.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 08 2004 Oct 28 FEATURES PINNING Low current (max. 300 ma) High voltage (max. 150 V). APPLICATIONS General purpose switching
More informationDATA SHEET. BC868 NPN medium power transistor; 20 V, 1 A DISCRETE SEMICONDUCTORS. Product specification Data supersedes data of 1999 Apr 08
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D109 Data supersedes data of 1999 Apr 08 2003 Dec 02 FEATURES High current Two current gain selections 1.2 W total power dissipation. APPLICATIONS Linear
More information3C96 3C98 BEST IN CLASS
BEST IN CLASS High efficiency, operation up to 4 khz, high power density and best in class Medium Frequency power conversion. FERROXCUBE is a member of the Yageo Group, which is among the world's strongest
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFG198 NPN 8 GHz wideband transistor. Product specification 1995 Sep 12
DISCRETE SEMICONDUCTORS DATA SHEET 1995 Sep 12 DESCRIPTION NPN planar epitaxial transistor in a plastic SOT223 envelope, intended for wideband amplifier applications. The device features a high gain and
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D743. BZA900A-series Quadruple ESD transient voltage suppressor. Product specification 2001 Sep 03
DISCRETE SEMICONDUCTORS DATA SHEET M3D743 Quadruple ESD transient voltage suppressor 2001 Sep 03 FEATURES ESD rating >8 kv, according to IEC61000-4-2 SOT665 surface mount package Common anode configuration.
More informationEMC Components. RF Chokes High Current B82432-H. Data Book Supplement
EMC Components RF Chokes High Current B82432-H Data Book Supplement SIMID 03 (Siemens Miniature Inductors) Rated inductance 1,0 bis 330 µh Rated current 0,11 to 1,10 A Construction Size as per EIA standard:
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET ook, halfpage M3D109 Supersedes data of 1999 Apr 19 2001 Oct 10 FEATURES High current (max. 1 A) Low voltage (max. 80 V). APPLICATIONS Driver stages of audio and video
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFR520 NPN 9 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET BFR File under Discrete Semiconductors, SC4 September 99 BFR FEATURES High power gain Low noise figure High transition frequency Gold metallization ensures excellent
More informationDATA SHEET. BC556; BC557 PNP general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 15 2004 Oct 11 FEATURES Low current (max. 100 ma) Low voltage (max. 65 V). APPLICATIONS General purpose switching and
More informationDATA SHEET. BC618 NPN Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2003 Oct Nov 05.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 2003 Oct 16 2004 Nov 05 FEATURES Low current (max. 500 ma) Low voltage (max. 55 V) High DC current gain. APPLICATIONS General
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D319. BB145C Low-voltage variable capacitance diode. Preliminary specification 2001 Dec 11
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low-voltage variable capacitance diode 2001 Dec 11 FEATURES Ultra small plastic SMD package Very low capacitance spread High capacitance ratio C1 to C4 ratio:
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 14 2004 Dec 08 FEATURES Low current (max. 200 ma) Low voltage (max. 15 V). APPLICATIONS High-speed switching applications.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BAS321 General purpose diode. Product specification Supersedes data of 1999 Feb 09.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Feb 09 2004 Jan 26 FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse voltage: max. 200 V Repetitive
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLW29 VHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor intended for use in class-a, B or C operated mobile transmitters with a nominal supply voltage of 13,5
More informationDISCRETE SEMICONDUCTORS DATA SHEET. 1PS76SB10 Schottky barrier diode. Product specification Supersedes data of 1996 Oct 14.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1996 Oct 14 2004 Jan 26 FEATURES PINNING Low forward voltage Guard ring protected Very small plastic SMD package. PIN DESCRIPTION 1 cathode 2 anode
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D088. BB200 Low-voltage variable capacitance double diode. Product specification 2001 Oct 12
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Low-voltage variable capacitance double diode 2001 Oct 12 FEATURES Very steep C/V curve C1: 70 pf; C4.5: 13.4 pf C1 to C5 ratio: min. 5 Low series
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS521 High voltage switching diode. Product specification 2003 Aug 12
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 2003 Aug 12 FEATURES High switching speed: max. 50 ns High continuous reverse voltage: 300 V Repetitive peak forward current: 625 ma Ultra small plastic SMD package.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT2222; PMBT2222A NPN switching transistors. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 1999 Apr 27 2004 Jan 22 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification. PINNING PIN 1
More informationDATA SHEET. PMBT5401 PNP high-voltage transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 15.
DISCRETE SEMICONDUCTORS DT SHEET k, halfpage M3D088 Supersedes data of 1999 pr 15 2004 Jan 21 FETURES Low current (max. 300 m) High voltage (max. 150 V). PPLICTIONS Switching and amplification in high
More informationTOGGLE SWITCHES IP67 A 9 SERIES 1B AGENCY APPROVALS SPECIFICATIONS
AGENCY APPROVALS SPECIFICATIONS Sealed miniature toggle switches C IP67 File N E195524 File N E195524 In conformity with: EN 60529: 1991 IEC 529: 1989 CHARACTERISTICS Contact Rating: S (silver) - 5A with
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFQ68 NPN 4 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN transistor mounted in a four-lead dual-emitter SOTA envelope with a ceramic cap. All leads
More informationDATA SHEET. BZA800AL series Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product specification 2002 Jan 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 Quadruple ESD transient voltage suppressor 2002 Jan 11 FEATURES ESD rating >8 kv contact discharge, according to IEC1000-4-2 SOT353 (SC-88A) surface
More informationDATA SHEET. BAV70 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Oct Apr 03.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 2001 Oct 11 2002 Apr 03 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D319. BAS716 Low-leakage diode. Product specification 2003 Nov 07
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 2003 Nov 07 FEATURES PINNING Plastic SMD package Low leakage current: typ. 0.2 na Switching time: typ. 0.6 µs Continuous reverse voltage: max. 75 V Repetitive
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFR94A NPN 3.5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC4 September 995 DESCRIPTION PINNING NPN resistance-stabilized transistor in a SOTE capstan envelope. It features extremely low cross
More informationDISCRETE SEMICONDUCTORS DATA SHEET. dbook, halfpage M3D049. BAS316 High-speed diode Feb 04. Product data sheet Supersedes data of 1998 Mar 26
DISCRETE SEMICONDUCTORS DATA SHEET dbook, halfpage M3D049 Supersedes data of 1998 Mar 26 2004 Feb 04 FEATURES Very small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage:
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage M3D109. BGA6489 MMIC wideband medium power amplifier. Product specification 2003 Sep 18
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D19 MMIC wideband medium power amplifier 23 Sep 18 FEATURES Broadband 5 Ω gain block 2 dbm output power SOT89 package Single supply voltage needed. PINNING
More informationDISCRETE SEMICONDUCTORS DATA SHEET. PMBT2369 NPN switching transistor. Product specification Supersedes data of 1999 Apr 27.
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 1999 pr 27 2004 Jan 22 FETURES Low current (max. 200 m) Low voltage (max. 15 V). PPLICTIONS High-speed switching, especially in portable equipment. PINNING
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D176. 1N914; 1N914A; 1N914B High-speed diodes. Product specification Supersedes data of 1999 May 26.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 26 2003 Jun 06 FEATURES Hermetically sealed leaded glass SOD27 (DO-35) package High switching speed: max. 4 ns Continuous reverse voltage:
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D058. BLF346 VHF power MOS transistor. Product specification Supersedes data of 1996 Oct 02.
DISCRETE SEMICONDUCTORS DATA SHEET M3D58 Supersedes data of 1996 Oct 2 23 Sep 26 FEATURES High power gain Easy power control Good thermal stability Gold metallization ensures excellent reliability. APPLICATIONS
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationConnect - Contact - Control. Connectors. Short Form Catalogue
Connect - Contact - Control Connectors Short Form Catalogue Components for electrical engineering Schaltbau connectors nowadays ensure good connections in all areas of electrical engineering. The product
More informationDATA SHEET. PEMZ1 NPN/PNP general purpose transistors DISCRETE SEMICONDUCTORS Nov 07. Product specification Supersedes data of 2001 Sep 25
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 NPN/PNP general purpose transistors Supersedes data of 2001 Sep 25 2001 Nov 07 FEATURES 300 mw total power dissipation Very small 1.6 1.2 mm ultra thin package
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFT92 PNP 5 GHz wideband transistor. Product specification File under Discrete Semiconductors, SC14
DISCRETE SEMICONDUCTORS DATA SHEET File under Discrete Semiconductors, SC14 November 1992 DESCRIPTION PINNING PNP transistor in a plastic SOT23 envelope. It is primarily intended for use in RF wideband
More informationDATA SHEET. BAV23S General purpose double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 05.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1999 May 05 2001 Oct 12 FEATURES Small plastic SMD package Switching speed: max. 50 ns General application Continuous reverse
More informationDATA SHEET. BSR62 PNP Darlington transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr Nov 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 26 2004 Nov 11 FEATURES PINNING High current (max. 1 A) Low voltage (max. 80 V) Integrated diode and resistor. APPLICATIONS
More information%BUB4IFFU. Chokes and inductors. For high frequency and EMC RF chokes, SBC series. Series/Type: B82141A / B82141B Date: November 2005
Chokes and inductors For high frequency and EMC RF chokes, Series/Type: / Date: November 2005 %BUB4IFFU EPCOS AG 2005. Reproduction, publication and dissemination of this publication and the information
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationMAGNETIC PRODUCTS. SMD Beads and Chokes
MAGNETIC PRODUCTS SMD Beads and Chokes Philips Components Magnetic Products SMD beads in tape November 1994 2 Magnetic Products Philips Components Contents page SMD Beads 8 SMD Common Mode Chokes 14 SMD
More informationDISCRETE SEMICONDUCTORS DATA SHEET
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1999 Apr 27 2004 Oct 11 FEATURES High current (max. 600 ma) Low voltage (max. 40 V). APPLICATIONS Switching and linear amplification.
More informationFerrites and accessories
Ferrites and accessories RM 8, RM 8 LP Cores and accessories Series/Type: B65811, Date: June 2013 Data Sheet EPCOS AG 2013. Reproduction, publication and dissemination of this data sheet and the information
More informationPMLL4148L; PMLL4448. High-speed switching diodes. Type number Package Configuration. PMLL4148L SOD80C - single diode PMLL4448 SOD80C - single diode
Rev. 06 4 April 2005 Product data sheet 1. Product profile 1.1 General description Single high-speed switching diodes, fabricated in planar technology, and encapsulated in small hermetically sealed glass
More informationDATA SHEET. 2PC945 NPN general purpose transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May 28.
DISCRETE SEMICONDUCTORS DATA SHEET ndbook, halfpage M3D186 Supersedes data of 1999 May 28 2004 Nov 08 FEATURES Low current (max. 100 ma) Low voltage (max. 50 V). APPLICATIONS General purpose switching
More informationDATA SHEET. BAV74 High-speed double diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 May Jan 14.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 Supersedes data of 1999 May 11 2004 Jan 14 FEATURES Small plastic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 50
More informationDATA SHEET. PIMH9; PUMH9; PEMH9 NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω DISCRETE SEMICONDUCTORS
DISCRETE SEMICONDUCTORS DT SHEET NPN/NPN resistor-equipped transistors; R1 = 10 kω,r2=47kω Supersedes data of 2003 Sep 15 2004 pr 14 FETURES Built-in bias resistors Simplifies circuit design Reduces component
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D176. BZX79 series Voltage regulator diodes. Product specification Supersedes data of 1999 May 25.
DISCRETE SEMICONDUCTORS DATA SHEET M3D176 Supersedes data of 1999 May 25 2002 Feb 27 FEATURES Total power dissipation: max. 500 mw Two tolerance series: ±2%, and approx. ±5% Working voltage range: nom.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BF998WR N-channel dual-gate MOS-FET. Product specification Supersedes data of 1995 Apr 25.
DISCRETE SEMICONDUCTORS DATA SHEET Supersedes data of 995 Apr 25 997 Sep 5 FEATURES High forward transfer admittance Short channel transistor with high forward transfer admittance to input capacitance
More informationIn data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below.
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic
More informationDATA SHEET. BF450 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 11.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jul 11 2004 Nov 11 FEATURES Low current (max. 25 ma) Low voltage (max. 40 V). APPLICATIONS HF and IF stages in radio receivers
More informationDATA SHEET. BLF UHF power LDMOS transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2001 Mar 07.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D379 Supersedes data of 2001 Mar 07 2003 Feb 10 FEATURES Typical 2-tone performance at a supply voltage of 26 V and I DQ of 500 ma: Output power = 90
More informationDATA SHEET. BF324 PNP medium frequency transistor DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1997 Jul 07.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D186 Supersedes data of 1997 Jul 07 2004 Nov 05 FEATURES Low current (max. 25 ma) Low voltage (max. 30 V). APPLICATIONS RF stages in FM front-ends in
More informationDATA SHEET. PBSS4140V 40 V low V CEsat NPN transistor DISCRETE SEMICONDUCTORS Jun 20. Product specification Supersedes data of 2001 Nov 05
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PBSS4140V 40 V low V CEsat NPN transistor Supersedes data of 2001 Nov 05 2002 Jun 20 FEATURES 300 mw total power dissipation Very small 1.6 mm x 1.2 mm x 0.55
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BLV25 VHF power transistor
DISCRETE SEMICONDUCTORS DATA SHEET August 1986 DESCRIPTION N-P-N silicon planar epitaxial transistor primarily for use in v.h.f.-f.m. broadcast transmitters. FEATURES internally matched input for wideband
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D883 BOTTOM VIEW. PBSS3540M 40 V, 0.5 A PNP low V CEsat (BISS) transistor. Product specification 2003 Aug 12
DISCRETE SEMICONDUCTORS DATA SHEET BOTTOM VIEW M3D883 23 Aug 12 FEATURES Low collector-emitter saturation voltage V CEsat High collector current capability I C and I CM High efficiency leading to reduced
More informationDATA SHEET. BZA462A Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1998 Oct 30.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D302 Supersedes data of 1998 Oct 30 1999 May 25 FEATURES ESD rating >15 kv, according to IEC1000-4-2 SOT457 surface mount package Common anode configuration
More informationData sheet Connection line M12 jack straight - RJ45 plug straight 4-pole, D-coded 2.0 m
Page 1/6 Illustrations Dimensional drawing Cut-out See enlarged drawings at the end of document Product specification shielded M12-jack to RJ45-plug Ethernet connection line Cat.5, 4-pole, D-coded (IEC
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2022 MMIC mixer Dec 04. Product specification Supersedes data of 2000 Jun 06
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 Supersedes data of 2000 Jun 0 2000 Dec 0 FEATURES PINNING Large frequency range: Cellular band (900 MHz) PCS band (1900 MHz) WLAN band (2. GHz)
More informationDATA SHEET. BZA800A-series Quadruple ESD transient voltage suppressor DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 2000 May 01
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD127 Supersedes data of 2000 May 01 2000 Sep 25 FEATURES ESD rating >8 kv, according to IEC1000-4-2 SOT353 (SC-88A) surface mount package Common anode
More informationDATA SHEET. TDA8510J 26 W BTL and 2 13 W SE power amplifiers INTEGRATED CIRCUITS May 18
INTEGRATED CIRCUITS DATA SHEET File under Integrated Circuits, IC01 1998 May 18 FEATURES Requires very few external components High output power Low output offset voltage (BTL channel) Fixed gain Diagnostic
More informationDATA SHEET. BAS216 High-speed switching diode DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 1999 Apr 22.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D154 Supersedes data of 1999 Apr 22 2002 May 28 FEATURES Small ceramic SMD package High switching speed: max. 4 ns Continuous reverse voltage: max. 75
More information74F3038 Quad 2-input NAND 30 Ω line driver (open collector)
INTEGRATED CIRCUITS Quad 2-input NAND 30 Ω line driver (open collector) Supersedes data of 1990 Jan 29 IC15 Data Handbook 1998 May 21 Quad 2-input NAND 30Ω line driver (open collector) FEATURES 30Ω line
More informationIMPORTANT NOTICE. use
Rev. 4 29 August 27 Product data sheet IMPORTANT NOTICE Dear customer, As from October 1st, 26 Philips Semiconductors has a new trade name - NXP Semiconductors, which will be used in future data sheets
More informationDISCRETE SEMICONDUCTORS DATA SHEET. book, halfpage MBD128. BGA2709 MMIC wideband amplifier. Preliminary specification 2002 Jan 31
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage MBD128 22 Jan 31 FEATURES Internally matched to 5 Ω Very wide frequency range (3.6 GHz at 3 db bandwidth) Flat 23 db gain (DC to 2.6 GHz at 1 db flatness)
More informationOptiLine 45 Floor boxes
OptiLine 45 Floor outlet boxes P89490 Type Colour Dimensions A/B/C (mm) Qty per pack Ref. No. Floor outlet box including mounting frames for Altira, trim frame with four quick-fix devices and lid with
More informationDATA SHEET. BCW31; BCW32; BCW33 NPN general purpose transistors DISCRETE SEMICONDUCTORS. Product specification Supersedes data of 2000 Jul 04
DISCRETE SEMICONDUCTORS DT SHEET Supersedes data of 2000 Jul 04 2004 Feb 06 FETURES Low current (100 m) Low voltage (32 V). PPLICTIONS General purpose switching and amplification. PINNING PIN 1 base 2
More informationDISCRETE SEMICONDUCTORS DATA SHEET M3D319. PMEG3002AEB Low V F MEGA Schottky barrier diode. Product specification 2002 May 06
DISCRETE SEMICONDUCTORS DATA SHEET M3D319 Low V F MEGA Schottky barrier diode 2002 May 06 FEATURES PINNING Forward current: 0.2 A Reverse voltage: 30 V Very low forward voltage Ultra small SMD package.
More informationDATA SHEET. BZV85 series Voltage regulator diodes DISCRETE SEMICONDUCTORS. Product data sheet Supersedes data of 1996 Apr 26.
DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D130 Supersedes data of 1996 Apr 26 1999 May 11 FEATURES Total power dissipation: max. 1.3 W Tolerance series: approx. ±5% Working voltage range: nom.
More informationDISCRETE SEMICONDUCTORS DATA SHEET. BFG10W/X UHF power transistor. Product specification 1995 Sep 22
DISCRETE SEMICONDUCTORS DATA SHEET 1995 Sep 22 FEATURES High efficiency Small size discrete power amplifier 900 MHz and 1.9 GHz operating areas Gold metallization ensures excellent reliability. APPLICATIONS
More information