Features. Ordering and Marking Information. P-Channel Enhancement Mode MOSFET -30V/-7A, R DS(ON) = V GS. =-10V = 60mW(max.

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1 P-Chnnel Enhncement Mode MOSFET Fetures -3V/-7A, = V GS =-V = V GS =-4.5V % UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint) HBM ESD protection level pss 2KV Pin Description D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) DDDD Applictions Power Mngement in Notebook Computer, Portble Equipment nd Bttery Powered Systems. Low Switch. (4) G S S S (, 2, 3) Ordering nd Mrking Informtion P-Chnnel MOSFET SM495PS SM495PS K : Assembly Mteril Hndling Code Temperture Rnge 495PS XXXXX Pckge Code Pckge Code K : SOP-8 Operting Junction Temperture Rnge C : -55 to 5 o C Hndling Code TR : Tpe & Reel Assembly Mteril G : Hlogen nd Led Free Device XXXXX - Lot Code Note : SINOPOWER led-free products contin molding compounds/die ttch mterils nd % mtte tin plte termintion finish; which re fully complint with RoHS. SINOPOWER led-free products meet or exceed the ledfree requirements of IPC/JEDEC J-STD-2D for MSL clssifiction t led-free pek reflow temperture. SINOPOWER defines Green to men led-free (RoHS complint) nd hlogen free (Br or Cl does not exceed 9ppm by weight in homogeneous mteril nd totl of Br nd Cl does not exceed 5ppm by weight). SINOPOWER reserves the right to mke chnges to improve relibility or mnufcturbility without notice, nd dvise customers to obtin the ltest version of relevnt informtion to verify before plcing orders.

2 Absolute Mximum Rtings (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Rting Unit V DSS Drin-Source Voltge -3 V GSS Gte-Source Voltge ±2 I D I DM I S I AS b E AS b Continuous Drin Current (V GS =-V) T A =25 C -7 T A =7 C ms Pulsed Drin Current (V GS =-V) -28 Diode Continuous Forwrd Current -2 Avlnche Current, Single pulse L=.5mH -9 Avlnche Energy, Single pulse L=.5mH 2 mj T J Mximum Junction Temperture 5 T STG Storge Temperture Rnge -55 to 5 P D R qja Mximum Power Dissiption Therml Resistnce-Junction to Ambient T A =25 C 2.8 T A =7 C.8 t s 45 Stedy Stte 85 R qjl Therml Resistnce-Junction to Led Stedy Stte 24 Note :Surfce Mounted on in 2 pd re, t sec. Note b:uis tested nd pulse width limited by mximum junction temperture 5 o C (initil temperture =25 o C). V A C W C/W 2

3 Electricl Chrcteristics (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions Min. Typ. Mx. Unit Sttic Chrcteristics BV DSS Drin-Source Brekdown Voltge V GS =V, I DS =-25mA V I DSS Zero Gte Voltge Drin Current V DS =-24V, V GS =V T J =85 C V GS(th) Gte Threshold Voltge V DS =V GS, I DS =-25mA V I GSS Gte Lekge Current V GS =±2V, V DS =V - - ± ma c Drin-Source On-stte Resistnce Diode Chrcteristics V SD c t rr d Q rr d V GS =-V, I DS =-7A V GS =-4.5V, I DS =-4A Diode Forwrd Voltge I SD =-2A, V GS =V V Reverse Recovery Time ns I SD =-7A, di SD /dt=a/ms Reverse Recovery Chrge - - nc Dynmic Chrcteristics d R g Gte Resistnce V GS =V, V DS =V,F=MHz W C iss Input Cpcitnce V GS =V, C oss Output Cpcitnce V DS =-5V, C rss Reverse Trnsfer Cpcitnce Frequency=.MHz t d(on) Turn-on Dely Time t r Turn-on Rise Time V DD =-5V, R L =5W, - - I DS =-A, V GEN =-V, t d(off) Turn-off Dely Time R G =6W t f Turn-off Fll Time Gte Chrge Chrcteristics d Q g Totl Gte Chrge Q gs Gte-Source Chrge V DS =-5V, V GS =-V, I DS =-7A - - Q gd Gte-Drin Chrge Note c:pulse test ; pulse width 3ms, duty cycle 2%. Note d:gurnteed by design, not subject to production testing. ma mw pf ns nc 3

4 Typicl Operting Chrcteristics Power Dissiption Drin Current P tot - Power (W) I D - Drin Current (A) T A =25 o C T A =25 o C,V G =-V Junction Temperture ( C) - Junction Temperture ( C) Sfe Opertion Are Therml Trnsient Impednce 5 3 -I D - Drin Current (A) 3ms ms ms ms. s T A =25 o C DC.. -V DS - Drin - Source Voltge (V) Rds(on) Limit Normlized Trnsient Therml Resistnce....2 Single Pulse.5..2 Duty =.5 Mounted on in 2 pd R qja : 45 o C/W E-3 E-4 E-3.. Squre Wve Pulse Durtion (sec) 4

5 Typicl Operting Chrcteristics (Cont.) Output Chrcteristics Drin-Source On Resistnce 3 V GS = -4.5,-5,-6,-7,-8,-9,-V -I D - Drin Current (A) V -3.5V -3V - On - Resistnce (mw) V GS =-4.5V V GS =-V -2.5V V DS - Drin-Source Voltge (V) I D - Drin Current (A) Gte-Source On Resistnce Gte Threshold Voltge 4 I DS =-7A.6 I DS =-25mA On Resistnce (mw) Normlized Threshold Voltge V GS - Gte - Source Voltge (V) - Junction Temperture ( C) 5

6 Typicl Operting Chrcteristics (Cont.) Drin-Source On Resistnce Source-Drin Diode Forwrd Normlized On Resistnce V GS = -V I DS = -7A -I S - Source Current (A) 3 =5 o C =25 o C.6 R =25 o C: 3mW Junction Temperture ( C) V SD - Source - Drin Voltge (V) Cpcitnce Gte Chrge C - Cpcitnce (pf) Crss Coss Frequency=MHz Ciss -V GS - Gte - source Voltge (V) V DS =-5V I DS =-7A V DS - Drin - Source Voltge (V) Q G - Gte Chrge (nc) 6

7 Avlnche Test Circuit nd Wveforms VDS L tav DUT EAS RG VDD VDD tp IAS IL.W tp VDSX(SUS) VDS Switching Time Test Circuit nd Wveforms VDS RG VGS DUT RD VDD VGS % td(on) tr td(off) tf tp 9% VDS 7

8 Clssifiction Profile 8

9 Clssifiction Reflow Profiles Profile Feture Sn-Pb Eutectic Assembly Pb-Free Assembly Prehet & Sok Temperture min (T smin ) Temperture mx (T smx ) Time (T smin to T smx ) (t s ) C 5 C 6-2 seconds 5 C 2 C 6-2 seconds Averge rmp-up rte (T smx to T P ) 3 C/second mx. 3 C/second mx. Liquidous temperture (T L ) Time t liquidous (t L ) Pek pckge body Temperture (T p )* Time (t P )** within 5 C of the specified clssifiction temperture (T c ) 83 C 6-5 seconds 27 C 6-5 seconds See Clssifiction Temp in tble See Clssifiction Temp in tble 2 2** seconds 3** seconds Averge rmp-down rte (T p to T smx ) 6 C/second mx. 6 C/second mx. Time 25 C to pek temperture 6 minutes mx. 8 minutes mx. * Tolernce for pek profile Temperture (T p ) is defined s supplier minimum nd user mximum. ** Tolernce for time t pek profile temperture (t p ) is defined s supplier minimum nd user mximum. Tble. SnPb Eutectic Process Clssifiction Tempertures (Tc) Pckge Thickness <35 Tble 2. Pb-free Process Clssifiction Tempertures (Tc) 35 <2.5 mm 235 C 22 C 2.5 mm 22 C 22 C Pckge Thickness < >2 <.6 mm 26 C 26 C 26 C.6 mm 2.5 mm 26 C 25 C 245 C 2.5 mm 25 C 245 C 245 C Relibility Test Progrm Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 Hrs, 8% of VDS Tjmx HTGB JESD-22, A8 Hrs, % of VGS Tjmx PCT JESD-22, A2 68 Hrs, %RH, 2tm, 2 C TCT JESD-22, A4 5 Cycles, -65 C~5 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing St Rd., Hsinchu Science Prk, Hsinchu, 378, Tiwn TEL: Fx: