Package Code. K : SOP-8 Operating Junction Temperature Range C : -55 to 150 o C Handling Code TR : Tape & Reel. Handling Code Temperature Range

Transcription

1 N-Chnnel Enhncement Mode MOSFET Fetures 30V/A, R DS(ON) = V GS = V R DS(ON) = V GS = 4.5V 0% UIS + R g Tested Relible nd Rugged Led Free nd Green Devices Avilble (RoHS Complint) Pin Description D D D D S S S G Top View of SOP-8 ( 5,6,7,8 ) D D DD Applictions Power Mngement in Notebook Computer, Portble Equipment nd Bttery Powered Systems. (4) G S S S (1, 2, 3) N-Chnnel MOSFET Ordering nd Mrking Informtion SM4838NS SM4838NS K : SM4838 XXXXX Assembly Mteril Hndling Code Temperture Rnge Pckge Code Pckge Code K : SOP-8 Operting Junction Temperture Rnge C : -55 to 150 o C Hndling Code TR : Tpe & Reel Assembly Mteril G : Hlogen nd Led Free Device XXXXX - Lot Code Note : SINOPOWER led-free products contin molding compounds/die ttch mterils nd 0% mtte tin plte termintion finish; which re fully complint with RoHS. SINOPOWER led-free products meet or exceed the ledfree requirements of IPC/JEDEC J-STD-020D for MSL clssifiction t led-free pek reflow temperture. SINOPOWER defines Green to men led-free (RoHS complint) nd hlogen free (Br or Cl does not exceed 900ppm by weight in homogeneous mteril nd totl of Br nd Cl does not exceed 1500ppm by weight). SINOPOWER reserves the right to mke chnges to improve relibility or mnufcturbility without notice, nd dvise customers to obtin the ltest version of relevnt informtion to verify before plcing orders. 1

2 Absolute Mximum Rtings (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Rting Unit V DSS Drin-Source Voltge 30 V GSS Gte-Source Voltge ±20 I D I DM I S I AS b E AS b Continuous Drin Current (V GS =V) T A =25 C T A =70 C 8 Pulsed Drin Current (V GS =V) 40 Diode Continuous Forwrd Current 1 Avlnche Current (Single Pulse) 9 Avlnche Energy, Single Pulse (L=0.5mH) 20 mj T J Mximum Junction Temperture 150 T STG Storge Temperture Rnge -55 to 150 P D R qja Mximum Power Dissiption Therml Resistnce-Junction to Ambient T A =25 C 3.1 T A =70 C 2.0 t s 32 Stedy Stte 65 R qjl Therml Resistnce-Junction to Led Stedy Stte 20 Note :Surfce Mounted on 1in 2 pd re, t sec. Mximum Power dissiption is clculted from R q JA (worst) =40 C/W under t s. Note b:uis tested nd pulse width limited by mximum junction temperture 150 o C (initil temperture T j=25 o C). V A C W C/W 2

3 Electricl Chrcteristics (T A = 25 C Unless Otherwise Noted) Symbol Prmeter Test Conditions Min. Typ. Mx. Unit Sttic Chrcteristics BV DSS Drin-Source Brekdown Voltge V GS =0V, I DS =250mA V I DSS Zero Gte Voltge Drin Current V DS =24V, V GS =0V T J =85 C V GS(th) Gte Threshold Voltge V DS =V GS, I DS =250mA V I GSS Gte Lekge Current V GS =±20V, V DS =0V - - ±0 na R DS(ON) Drin-Source On-stte Resistnce V GS =V, I DS =8A V GS =4.5V, I DS =8A Gfs Forwrd Trnsconductnce V DS =5V, I DS =8A S Diode Chrcteristics V SD t rr b Q rr b Diode Forwrd Voltge I SD =1A, V GS =0V V Reverse Recovery Time ns I SD =8A, dl SD /dt=0a/ms Reverse Recovery Chrge nc Dynmic Chrcteristics b R G Gte Resistnce V GS =0V,V DS =0V,F=1MHz W C iss Input Cpcitnce V GS =0V, C oss Output Cpcitnce V DS =15V, C rss Reverse Trnsfer Cpcitnce Frequency=1.0MHz t d(on) Turn-on Dely Time t V DD =15V, R L r Turn-on Rise Time =15W, - 17 I DS =1A, V GEN =V, t d(off) Turn-off Dely Time R G =6W t f Turn-off Fll Time Gte Chrge Chrcteristics b Q g Totl Gte Chrge Totl Gte Chrge V DS =15V, V GS =V, I DS =8A Q gth Threshold Gte Chrge V DS =15V, V GS =4.5V, Q gs Gte-Source Chrge I DS =8A Q gd Gte-Drin Chrge Note : Pulse test ; pulse width 300 ms, duty cycle 2%. Note b : Gurnteed by design, not subject to production testing. ma mw pf ns nc 3

4 Typicl Operting Chrcteristics Power Dissiption Drin Current Ptot - Power (W) ID - Drin Current (A) T A =25 o C T A =25 o C,V G =V Tj - Junction Temperture ( C) Tj - Junction Temperture Sfe Opertion Are Therml Trnsient Impednce ID - Drin Current (A) Rds(on) Limit 300ms 1ms ms 0ms 1s DC T A =25 o C Normlized Trnsient Therml Resistnce Single Pulse 0.2 Duty = 0.5 Mounted on 1in 2 pd R qja : 50 o C/W E-4 1E VDS - Drin - Source Voltge (V) Squre Wve Pulse Durtion (sec) 4

5 Typicl Operting Chrcteristics (Cont.) Output Chrcteristics Drin-Source On Resistnce V GS =4,4.5,5,6,7,8,9,V 24 ID - Drin Current (A) V V 5 2.5V RDS(ON) - On - Resistnce (mw) V GS =4.5V V GS =V VDS - Drin - Source Voltge (V) ID - Drin Current (A) Gte-Source On Resistnce Gte Threshold Voltge 40 I DS =8A 1.6 I DS =250mA RDS(ON) - On - Resistnce (mw) Normlized Threshold Voltge VGS - Gte - Source Voltge (V) Tj - Junction Temperture ( C) 5

6 Typicl Operting Chrcteristics (Cont.) Drin-Source On Resistnce Source-Drin Diode Forwrd V GS = V I DS = 8A 40 Normlized On Resistnce IS - Source Current (A) 1 T j =150 o C T j =25 o C 0.4 R j =25 o C: 13.5mW Tj - Junction Temperture ( C) VSD - Source - Drin Voltge (V) Cpcitnce Gte Chrge Frequency=1MHz 9 V DS =15V I DS =8A C - Cpcitnce (pf) Crss Coss Ciss VGS - Gte-source Voltge (V) VDS - Drin-Source Voltge (V) QG - Gte Chrge (nc) 6

7 Typicl Operting Chrcteristics (Cont.) 60 Trnsfer Chrcteristics 50 I D - Drin Current (A) T j =125 o C T j =25 o C T j =-55 o C V GS - Gte-Source Voltge (V) 7

8 Avlnche Test Circuit nd Wveforms VDS L tp VDSX(SUS) DUT VDS RG VDD IAS tp IL 0.01W VDD EAS tav Switching Time Test Circuit nd Wveforms VDS RD DUT VDS 90% RG VGS VDD tp % VGS td(on) tr td(off) tf 8

9 Disclimer Sinopower Semiconductor, Inc. (hereinfter Sinopower ) hs been mking gret efforts to development high qulity nd better performnce products to stisfy ll customers needs. However, product my fil to meet customer s expecttion or mlfunction for vrious situtions. All informtion which is shown in the dtsheet is bsed on Sinopower s reserch nd development result, therefore, Sinopower shll reserve the right to djust the content nd monitor the production. In order to unify the qulity nd performnce, Sinopower hs been following JEDEC while defines ssembly rule. Notwithstnding ll the suppliers bsiclly follow the rule for ech product, different processes my cuse slightly different results. The technicl informtion specified herein is intended only to show the typicl functions of nd exmples of ppliction circuits for the products. Sinopower does not grnt customers explicitly or implicitly, ny license to use or exercise intellectul property or other rights held by Sinopower nd other prties. Sinopower shll ber no responsible whtsoever for ny dispute rising from the use of such technicl informtion. The products re not designed or mnufctured to be used with ny equipment, device or system which requires n extremely high level of relibility, such s the filure or mlfunction of which ny my result in direct thret to humn life or risk of humn injury. Sinopower shll ber no responsibility in ny wy for use of ny of the products for the bove specil purposes. If product is intended to use for ny such specil purpose, such s vehicle, militry, or medicl controller relevnt pplictions, plese contct Sinopower sles representtive before purchsing. 9

10 Clssifiction Profile

11 Clssifiction Reflow Profiles Profile Feture Sn-Pb Eutectic Assembly Pb-Free Assembly Prehet & Sok Temperture min (T smin ) Temperture mx (T smx ) Time (T smin to T smx ) (t s ) 0 C 150 C seconds 150 C 200 C seconds Averge rmp-up rte (T smx to T P ) 3 C/second mx. 3 C/second mx. Liquidous temperture (T L ) Time t liquidous (t L ) Pek pckge body Temperture (T p )* Time (t P )** within 5 C of the specified clssifiction temperture (T c ) 183 C seconds 217 C seconds See Clssifiction Temp in tble 1 See Clssifiction Temp in tble 2 20** seconds 30** seconds Averge rmp-down rte (T p to T smx ) 6 C/second mx. 6 C/second mx. Time 25 C to pek temperture 6 minutes mx. 8 minutes mx. * Tolernce for pek profile Temperture (T p ) is defined s supplier minimum nd user mximum. ** Tolernce for time t pek profile temperture (t p ) is defined s supplier minimum nd user mximum. Tble 1. SnPb Eutectic Process Clssifiction Tempertures (Tc) Pckge Volume mm 3 Thickness <350 Tble 2. Pb-free Process Clssifiction Tempertures (Tc) Volume mm <2.5 mm 235 C 220 C 2.5 mm 220 C 220 C Pckge Thickness Volume mm 3 <350 Volume mm Volume mm 3 >2000 <1.6 mm 260 C 260 C 260 C 1.6 mm 2.5 mm 260 C 250 C 245 C 2.5 mm 250 C 245 C 245 C Relibility Test Progrm Test item Method Description SOLDERABILITY JESD-22, B2 5 Sec, 245 C HTRB JESD-22, A8 00 Hrs, 80% of VDS Tjmx HTGB JESD-22, A8 00 Hrs, 0% of VGS Tjmx PCT JESD-22, A2 168 Hrs, 0%RH, 2tm, 121 C TCT JESD-22, A4 500 Cycles, -65 C~150 C Customer Service Sinopower Semiconductor, Inc. 5F, No. 6, Dusing 1St Rd., Hsinchu Science Prk, Hsinchu, 30078, Tiwn TEL: Fx: