GaAs Junction gate phemt (JPHEMT) MMIC switch, CMOS decoder
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1 SP4T + SP6T Antenna Switch Module for 6TRx/2Tx/2Rx with SPI I/F CXM3580AUR Description The CXM3580AUR is a SP4T+ SP6T antenna switch module for GSM/UMTS/CDMA /LTE multi-mode handset. The CXM3580AUR has a +1.8 V CMOS compatible decoder with SPI function. The Sony GaAs junction gate phemt (JPHEMT) MMIC process is used for low insertion loss and high linearity. The device has low BOM with no DC blocking Capacitor (Application: GSM/UMTS/CDMA/LTE Multi-mode Handsets) Features Low insertion loss: 0.37 db (Typ.) TRx (Cellular band) 0.95 db (Typ.) TRx (IMT Tx band) High linearity: IIP3 = 68 dbm Low voltage operation: VDD = 2.5 V Supports CMOS control for serial interface No DC blocking capacitor Small packing (size): UQFN-26P (2.6 mm 3.4 mm 0.60 mm Max.) Lead-free and RoHS compliant Structure GaAs Junction gate phemt (JPHEMT) MMIC switch, CMOS decoder This IC is ESD sensitive device. Special handling precautions are required. Sony reserves the right to change products and specifications without prior notice. This information does not convey any license by any implication or otherwise under any patents or other right. Application circuits shown, if any, are typical examples illustrating the operation of the devices. Sony cannot assume responsibility for any problems arising out of the use of these circuits E11614A19
2 Absolute Maximum Ratings (Ta = 25 C) Bias voltage VDD 4 V Supply voltage for SI SPI_VDD 3.6 V Control voltage for SI SPI_CLK, FRM, DATA 3.6 V Input power max. (Tx1) 36 dbm (Duty cycle = 12.5 % to 50 %) Input power max. (Tx2) 34 dbm (Duty cycle = 12.5 % to 50 %) Input power max. (TRx) 32 dbm Input power max. (Rx) 13 dbm Operating temperature range 35 to +90 C Storage temperature range 65 to +150 C - 2 -
3 Block Diagram SP4T + SP6T Antenna Switch Module with SPI Ant (L) Ant (H) GaAs JPHEMT Ant-Switch Tx1 Rx1 TRx2 TRx5 Tx2 Rx2 TRx1 TRx3 TRx4 TRx6 VDD Level shifter Decoder DC-DC Converter SPI I/F SPI_VDD SPI_DATA SPI_CLK SPI_FRM CMOS Switch Controller SP4T + SP6T 6TRx/2Tx/2Rx Ant (L) Ant (H) F21 F22 Load_LB F1 F9 F4 F7 F2 F10 F3 F5 F6 F8 F11 F19 F14 F17 F12 F20 F13 F15 F16 F18 LPF1 LPF2 Tx1 Rx1 TRx2 TRx5 Tx2 Rx2 TRx1 TRx3 TRx4 TRx6-3 -
4 Truth Table State Active Path SPI_Bit SW State ( *1 ) D14 D13 D12 D11 F1 F2 F3 F4 F5 F6 F7 F8 F9 F10 F11 F12 F13 F14 F15 F16 F17 F18 F19 F20 F21 F22 1 Tx1-ANT (L) H L L L L L L L L L L H H H H H H H H H L H 2 Tx2-ANT (H) L H L L L L L L L L H L H H H H H H H H H L 3 TRx1-ANT (H) L L H L L L L L L L H H L H H H H H H H H L 4 TRx2-ANT (L) L L L H L L L L L L H H H L H H H H H H L H 5 TRx3-ANT (H) L L L L H L L L L L H H H H L H H H H H H L 6 TRx4-ANT (H) L L L L L H L L L L H H H H H L H H H H H L 7 TRx5-ANT (L) L L L L L L H J J L H H H H H H L H H H L H 8 TRx6-ANT (H) L L L L L L L H L L H H H H H H H L H H H L 9 Rx1-ANT (L) L L L L L L L L H L H H H H H H H H L H L H 10 Rx2-ANT (H) L L L L L L L L L H H H H H H H H H H L H L 11 Idle ( *2 ) Isolation L L L L L L L L L L H H H H H H H H H H H H *1 State L means a switch OFF, state H means a switch ON. *2 State Idle means that the DC/DC converter is OFF, and the switch paths are in an undefined state
5 Pin Configuration VDD SPI_VDD SPI_DATA SPI_CLK SPI_FRM Tx1 Tx ANT (L) Rx ANT (H) 16 Rx1 TRx UQFN-26P PKG (2.6 mm 3.4 mm 0.6 mm Max.) Top View Load_LB TRx6 TRx TRx5 TRx TRx DC Bias Conditions (Ta = 25 C) Item Min. Typ. Max. Unit VDD V SPI_VDD V SPI_Vctl (H) SPI_VDD 0.7 SPI_VDD V SPI_Vctl (L) 0.3 SPI_VDD 0.3 V - 5 -
6 Electrical Characteristics (VDD = 2.5 V, Ta = 25 C) Item Symbol Path Condition Min. Typ. Max. Unit ANT (L) Tx1 * ANT (H) Tx2 * ANT (L) Rx1 * ANT (H) Rx2 * Insertion loss IL ANT (L) TRx2 * ANT (L) TRx5 * db ANT (H) TRx1 *6, * ANT (H) TRx3 *6, * ANT (H) TRx4 *6, * ANT (H) TRx6 *6, * VSWR VSWR All ports in Active paths 600 to 2170 MHz 1.50 Harmonics Attenuation 2fo ANT (L) Tx1 *1 45 3fo 42 2fo ANT (H) Tx2 *2 50 3fo 40 2fo ANT (L) TRx2, TRx5 *5 50 3fo 50 2fo ANT (H) TRx1, TRx3, 50 *6 3fo TRx4, TRx to 1830 MHz to 2745 MHz 27 ANT (L) Tx to 3520 MHz to 6340 MHz 15 ATT 6350 to MHz to 3820 MHz 25 ANT (H) Tx to 5730 MHz to MHz 20 dbm db Inter modulation product power in Rx band IMD2 IMD3 ANT TRx1, 2, 3, 4, 5, 6 *8, *9, *13, *17 * *8, *10, * *8, *11, *12, *15, *16, *19, * dbm Input IP3 IIP3 ANT TRx1, 2, 3, 4, 5, 6 *8, *21 68 *8, *22 68 dbm Switching time Ts 50 % Ctl to 90 % RF 3 5 s Supply current IDD Active or Isolation mode 0.40 ma VDD = 2.5 V Idel mode 20 A - 6 -
7 Item Symbol Path Condition Min. Typ. Max. Unit ANT (H) ANT (L) (TRx1 Active) 824 MHz 960 MHz MHz 2170 MHz TRx1 TRx2 (TRx1 Active) 824 MHz 960 MHz MHz 2170 MHz TRx1 TRx3, 4, 5, 6 (TRx1 Active) 824 MHz 960 MHz MHz 2170 MHz TRx1 Rx1 (TRx1 Active) 824 MHz 960 MHz MHz 2170 MHz TRx1 Rx2 (TRx1 Active) 824 MHz 960 MHz MHz 2170 MHz ANT (L) ANT (H) (TRx2 Active) 824 MHz 960 MHz MHz 2170 MHz TRx2 TRx1, 3 (TRx2 Active) 824 MHz 960 MHz MHz 2170 MHz TRx2 Rx4, 5, 6 (TRx2 Active) 824 MHz 960 MHz MHz 2170 MHz TRx2 Rx1 (TRx2 Active) 824 MHz 960 MHz MHz 2170 MHz TRx2 Rx2 (TRx2 Active) 824 MHz 960 MHz MHz 2170 MHz Isolation ISO ANT (H) ANT (L) (TRx3 Active) 824 MHz 960 MHz MHz 2170 MHz db TRx3 TRx1, 4, 5, 6 (TRx3 Active) 824 MHz 960 MHz MHz 2170 MHz TRx3 TRx2 (TRx3 Active) 824 MHz 960 MHz MHz 2170 MHz TRx3 Rx1 (TRx3 Active) 824 MHz 960 MHz MHz 2170 MHz TRx3 Rx2 (TRx3 Active) 824 MHz 960 MHz MHz 2170 MHz ANT (H) ANT (L) (TRx4 Active) 824 MHz 960 MHz MHz 2170 MHz TRx4 TRx1, 2, 3 (TRx4 Active) 824 MHz 960 MHz MHz 2170 MHz TRx4 TRx5, 6 (TRx4 Active) 824 MHz 960 MHz MHz 2170 MHz TRx4 Rx1 (TRx4 Active) 824 MHz 960 MHz MHz 2170 MHz TRx4 Rx2 (TRx4 Active) 824 MHz 960 MHz MHz 2170 MHz
8 Item Symbol Path Condition Min. Typ. Max. Unit ANT (L) ANT (H) (TRx5 Active) 824 MHz 960 MHz MHz 2170 MHz TRx5 TRx1, 2, 3 (TRx5 Active) 824 MHz 960 MHz MHz 2170 MHz TRx5 TRx4, 6 (TRx5 Active) 824 MHz 960 MHz MHz 2170 MHz TRx5 Rx1 (TRx5 Active) 824 MHz 960 MHz MHz 2170 MHz TRx5 Rx2 (TRx5 Active) 824 MHz 960 MHz MHz 2170 MHz ANT (H) ANT (L) (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz TRx6 TRx1, 2, 3 (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz TRx6 TRx4 (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz TRx6 TRx5 (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz TRx6 Rx1 (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz Isolation ISO TRx6 Rx2 (TRx6 Active) 824 MHz 960 MHz MHz 2170 MHz db ANT (L) ANT (H) (Tx1 Active) 824 MHz 915 MHz Tx1 TRx1, 2, 3, 4, 5, 6 (Tx1 Active) 824 MHz 915 MHz Tx1 Rx1, Rx2 (Tx1 Active) 824 MHz 915 MHz Tx1 Tx2 (Tx1 Active) 824 MHz 915 MHz MHz 1830 MHz ANT (H) ANT (L) 1710 MHz 1910 MHz Tx2 TRx1 (Tx2 Active) Tx2 TRx2, 3 (Tx2 Active) Tx2 TRx4, 5 (Tx2 Active) Tx2 TRx6 (Tx2 Active) Tx2 Rx1 (Tx2 Active) Tx2 Rx2 (Tx2 Active) 1710 MHz 1910 MHz MHz 1910 MHz MHz 1910 MHz MHz 1910 MHz MHz 1910 MHz MHz 1910 MHz
9 Item Symbol Path Condition Min. Typ. Max. Unit Tx2 Tx1 (Tx2 Active) 1710 MHz 1910 MHz Isolation ISO ANT (L) ANT (H) (Rx1 Active) ANT (H) ANT (L) (Rx2 Active) 869 MHz 960 MHz MHz 1910 MHz MHz 960 MHz MHz 1990 MHz db Tx1 ANT (L), ANT (H) 824MHz 915 MHz Tx2 ANT (L), ANT (H) 1710 MHz 1910 MHz Electrical characteristics are measured with all RF ports terminated in 50 Ω. Corresponding Band of GSM Tx/Rx (GSM). *1 Pin = 35 dbm, 824 to 915 MHz (GSM850/900 Tx) *2 Pin = 32 dbm, 1710 to 1910 MHz (GSM1800/1900 Tx) *3 Pin = 10 dbm, 869 to 960 MHz (GSM850/900 Rx) *4 Pin = 10 dbm, 1805 to 1990 MHz (GSM1800/1900 Rx) Corresponding Band of TRx (UMTS/CDMA). *5 Pin = 26 dbm, 824 to 960 MHz (Band 5, Band 6, Band 8) *6 Pin = 26 dbm, 1710 to 1990 MHz (Band 1 Tx, Band 2 Tx, Band 4 Tx) *7 Pin = 10 dbm, 2110 to 2170 MHz (Band 1 Rx, Band 4 Rx) *8 Measured with the recommended circuit - 9 -
10 IMD Condition Band frx on TRx frx +20dBm on TRx Band I 2140 MHz 1950 MHz Band II 1960 MHz 1880 MHz Band V 880 MHz 835 MHz fblocker 15dBm on Ant IMD Condition IMD2 (frx-ftx) 190 MHz *9 IMD2 (frx+ftx) 4090 MHz *10 IMD3 (2fTx-fRx) 1760 MHz *11 IMD3 (2fTx+fRx) 6040 MHz *12 IMD2 (frx-ftx) 80 MHz *13 IMD2 (frx+ftx) 3840 MHz *14 IMD3 (2fTx-fRx) 1800 MHz *15 IMD3 (2fTx+Rx) 5720 MHz *16 IMD2 (frx-ftx) 45 MHz *17 IMD2 (frx+ftx) 1715 MHz *18 IMD3 (2fTx-fRx) 790 MHz *19 IMD3 (2fTx+fRx) 2550 MHz *20 IIP3 Condition Band f1 +27 dbm on TRx f2 +27 dbm on TRx IIP3 Condition IIP3 = (3 Pout IM3)/2 Band I 1950 MHz 1951 MHz *21 Band V 835 MHz 836 MHz *
11 Triple Beat Ratio (VDD = 2.5 V, Ta = 25 C) Item Symbol Path Condition Min. Typ. Max. Unit Triple Beat Ratio TBR ANT- TRx1, 2, 3, 4, 5, 6 Tx1 at TRx* 21.5 dbm [MHz] Tx2 at TRx* 21.5 dbm [MHz] Jammer at Ant 30 dbm [MHz] Triple Beat Product at TRx* [MHz] * Electrical characteristics are measured with all RF ports terminated in 50. Measured with the recommended circuit dbc IIP2 (VDD = 2.5 V, Ta = 25 C) Item Symbol Path Condition Min. Typ. Max. Unit Input IP2 IIP2 ANT- TRx1, 2, 3, 4, 5, 6 Tx at TRx* 24 dbm [MHz] Jammer at Ant 20 dbm [MHz] IM2 Product at TRx* [MHz] * Electrical characteristics are measured with all RF ports terminated in 50. Measured with the recommended circuit dbm
12 SPI Timing Characteristic SPEC Item Symbol Condition Min. Min. Min. Unit SPI bias current SPI_IDD SPI_VDD = 1.8 V A SPI Ctrl current SPI_Ictl SPI_VDD = 1.8 V 10 A SPI_Enable SPI_EN SPI_VDD (90 %) 10 s Clock freaquency CLK_Freq SPI_VDD Enable 26 MHz Clock cycle tcc CLK_Freq = 26 MHz ns Clock begin time tcb tcc/2 ns Clock end time tce tcc/2 ns Clock width High tcwh tcc 0.4 ns Clock width Low tcwl tcc 0.4 ns Data setup time tds 5 ns Data hold time tdh 5 ns tcb tcc tce FRM tcwl tcwh CLK DATA tds tdh
13 SPI Control Specification Item Address bits Data bits Total bits Clock edge (data sampling) 14 bits 16 bits 30 bits total Rising edge Specification Address Control Data MSB LSB Port symbol R/W Device address Register address Idle Tx Tx TRx TRx TRx TRx TRx TRx Rx Rx Isolation Idle Port symbol Data D15 D14 D13 D12 D11 D10 D9 D8 D7 D6 D5 D4 D3 D2 D1 D0 Idle X X X X X X X X X X X X Tx1 X X X X X X X X X X X X Tx2 X X X X X X X X X X X X TRx1 X X X X X X X X X X X X TRx2 X X X X X X X X X X X X TRx3 X X X X X X X X X X X X TRx4 X X X X X X X X X X X X TRx5 X X X X X X X X X X X X TRx6 X X X X X X X X X X X X Rx1 X X X X X X X X X X X X Rx2 X X X X X X X X X X X X Isolation X X X X X X X X X X X X Idle X X X X X X X X X X X X X X X X * Either idle state D11 to D14 is 0000, or XXXX. Clock Block Diagram FRM CLK DATA 29 Address 28 Address 15 Data 14 Data 1 Data 0 Data
14 Recommended Circuit 6 C1 L1 C2 L2 5 4 VDD SPI_VDD SPI_DATA SPI_CLK SPI_FRM Tx1 Tx Rx ANT (L) ANT (H) Rx1 TRx UQFN-26P PKG (2.6 mm 3.4 mm 0.6 mm Max.) Top View Load_LB TRx6 TRx TRx5 TRx TRx pf C3 100 pf C3 Note) 1. No DC blocking capacitors are required on all RF ports. 2. DC levels of all RF ports are. 3. L1 (22 nh) and C1 (12 pf) are recommended on Ant port for ESD protection. 4. L2 (12 nh) and C2 (12 pf) are recommended on Ant port for ESD protection. 5. C3 capacitor (100 pf) is recommended
15 Recommended Land Pattern PKG: 3.4 mm 2.6 mm Metal mask thickness: 110 µm : Land Pin pitch: 0.4 mm : Metal area in board ( 1) 1: plane is recommended : Mask (Open area) : Resist (Open area) 3.4 (PKG Line) 2.5 ( ) Detail A R0.05 (Mask) PKG Line ( ) 2.6 (PKG Line) A PCB Design for UQFN-26P (Image) Via Hole PKG Line
16 Package Outline (Unit: mm) Sony Corporation
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SPDT SWITCH GaAs MMIC
SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG1516R is a GaAs SPDT switch IC suited for antenna switch of cellular phone handset. This switch features low loss, high isolation at high power, and exhibits
Features OBSOLETE. = +25 C, Vctl = 0/+8 Vdc, 50 Ohm System. Parameter Frequency* Min. Typ. Max. Units Tx - RFC MHz db.
GaAs MMIC 1W T/R Typical Applications Features 1 The HMC446 / HMC446E is ideal for: ISM/Cellular Portables/Handsets Automotive Telematic Applications Mobile Radio Functional Diagram Low Insertion Loss:.6
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2030-192/MSW2T-2031-192/MSW2T-2032-192 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 6 GHz Surface Mount SP2T Switch 5mm x 8mm x 2.5mm
LNA In. Input Match. LNA Vref. LNA Sel. RX Switch. TX Switch GND. PA Vcc2 GND GND. PA Out. Product Description. GaAs HBT GaAs MESFET InGaP HBT
3.0V to 4.2V, ISM Band Transmit/Receive Module with Diversity Transfer Switch RFFM6904 3.0V TO 4.2V, ISM BAND TRANSMIT/RECEIVE MODULE WITH DIVERSITY TRANSFER SWITCH Package: LGA, 32-pin, 8mm x 8mm x 1.2mm
Features. = +25 C, With 0/+5V Control, 50 Ohm System
Typical Applications The HMC244AG16 is ideal for: Telecom Infrastructure Military Radios, Radar & ECM Space Applications Test Instrumentation Functional Diagram Features Low Insertion Loss:.9 Non-Reflective
MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2041-193 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 400 MHz to 4 GHz Surface Mount SP2T Switch: 8mm x 5mm x 2.5mm Average Power: +52 dbm High
HMC245QS16 / 245QS16E. Features OBSOLETE. Parameter Frequency Min. Typ. Max. Units. DC GHz DC GHz DC GHz
Typical Applications The HMC245QS16 / HMC245QS16E is ideal for: Basestation Infrastructure CATV / DBS Wireless Local Loop Test Equipment Functional Diagram Features Low Insertion Loss:.5 @ 2. GHz Non-Refl
Insertion Loss INSERTION LOSS () C +85C -4C Normalized Attenuation (Only Major States are Shown)
5 Typical Applications The HMC35LP4 / HMC35LP4E is ideal for: Cellular/3G Infrastructure Fixed Wireless, WiMax & WiBro Test Instrumentation Functional Diagram.5 LSB GaAs MMIC 5-BIT SERIAL Features.5 LSB
Nonreflective, Silicon SP4T Switch, 0.1 GHz to 6.0 GHz HMC7992
Nonreflective, Silicon SP4T Switch,.1 GHz to 6. GHz FEATURES Nonreflective, 5 Ω design High isolation: 45 db typical at 2 GHz Low insertion loss:.6 db at 2 GHz High power handling 33 dbm through path 27
Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz GHz Attenuation Range DC - 5.
5 Typical Applications HMC54LP3 / 54LP3E v.65 1 LSB GaAs MMIC 4-BIT DIGITAL Features The HMC54LP3 / HMC54LP3E is ideal for both RF and IF applications: Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro
OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz GHz Attenuation Range DC - 5.
5 Typical Applications HMC54LP3 / 54LP3E v.65 1 LSB GaAs MMIC 4-BIT DIGITAL Features The HMC54LP3 / HMC54LP3E is ideal for both RF and IF applications: Cellular Infrastructure ISM, MMDS, WLAN, WiMAX, WiBro
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC
WIDE BAND LOW NOISE AMPLIFIER GaAs MMIC GENERAL DESCRIPTION The NJGKA is a wide band low noise amplifier GaAs MMIC designed for mobile TV application. And this amplifier can be tuned to wide frequency
SKY LF: 0.1 to 3.8 GHz SP8T Antenna Switch
DATA SHEET SKY13418-485LF: 0.1 to 3.8 GHz SP8T Antenna Switch Applications Any 2G/3G/4G antenna diversity or LTE (TDD/FDD) transmit/receive system for which GSM transmit is not required Features Broadband
Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]
![Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]](/thumbs/85/92877431.jpg "Features. = +25 C, VDD = +5 V, 0 dbm Drive Level [1]")
Typical Applications Features The HMC196LP3E is suitable for: Point-to-Point & VSAT Radios Test Instrumentation Military & Space Functional Diagram High Output Power: 12 dbm Low Input Power Drive: -2 to
OBSOLETE. Output Power for 1 db Compression dbm Output Third Order Intercept Point (Two-Tone Output Power= 12 dbm Each Tone)
Designer s Kit Available v.211t Typical Applications The is ideal for: Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors IF & RF Applications Functional Diagram
Product Description. Ordering Information. GaAs MESFET Si BiCMOS
Digital Controlled Variable Gain Amplifier 1700MHz to 2400MHz RFDA2077 DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 1700MHz to 2400MHz Package: MCM 32-Pin, 7.0mmx7.0mm Features Dual Channel VGA Frequency
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
Features. = +25 C, Vdd = +5 Vdc, 50 Ohm System. trise, tfall (10/90% RF) ton, toff (50% CTL to 10/90% RF)
Typical Applications The HMC174MS8 / HMC174MS8E is ideal for: ISM Applications PCMCIA Wireless Cards Portable Wireless Features Ultra Small Package: MSOP8 High Third Order Intercept: +60 m Single Positive
Features OBSOLETE. = +5V in a 50 Ohm System. Parameter Frequency Min. Typ. Max. Units DC GHz DC GHz
Typical Applications The HMC252QS24 / HMC252QS24E is ideal for: Base Station CATV / DBS MMDS & WirelessLAN Test Equipment Functional Diagram Features Low Insertion Loss (2 GHz):.9 Single Positive Supply:
Features. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
Features OBSOLETE. = +25 C, Rbias = 0 Ohm. Bypass Mode Failsafe Mode Parameter
7 Typical Applications The HMC668LP3(E) is ideal for: Cellular/3G and LTE/WiMAX/4G BTS & Infrastructure Repeaters and Femtocells Tower Mounted Amplifiers Test & Measurement Equipment Functional Diagram
Not For New Design FMS W GaAs phemt SPDT SWITCH. Product Description. Features. Applications
10W GaAs phemt SPDT Switch FMS2031-001 10W GaAs phemt SPDT SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2031-001 is a 10 W, Single-pole, Double-throw, (SPDT) GaAs phemt reflective antenna
Features. Parameter* Min. Typ. Max. Units Frequency Range GHz Gain 2 5 db. Gain Variation over Temperature
v3.1 HMC59MSGE AMPLIFIER,. -.9 GHz Typical Applications The HMC59MSGE is ideal for: DTV Receivers Multi-Tuner Set Top Boxes PVRs & Home Gateways Functional Diagram Features Single-ended or Balanced Output
Features. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2040-193/MSW2T-2041-193 SP2T Surface Mount High Power PIN Diode Switch Features: Wide Operating Frequency Band: 50 MHz to 4 GHz Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading
DPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC GENERAL DESCRIPTION NJG162HE3 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as CDMA, GPS and PCS. This switch features
MAPS Digital Phase Shifter 4-Bit, GHz. Features. Functional Schematic. Description. Pin Configuration 2. Ordering Information 1
MAPS-1146 4-Bit, 8. - 12. GHz Features 4 Bit 36 Coverage with LSB = 22.5 Integrated CMOS Driver Serial or Parallel Control Low DC Power Consumption Minimal Attenuation Variation over Phase Shift Range
NZ GHz SP6T Antenna Switch Module for UMTS/TD-SCDMA/LTE
0.1-3.0GHz SP6T Antenna Switch Module for UMTS/TD-SCDMA/LTE Description Features The is a SP6T (single-pole six-throw) antenna switch module, designed for multimode broadband cellular applications, supporting
RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT
Digital Controlled Variable Gain Amplifier 50 MHz to 4000 MHz, 6 Bit RDA1005L DIGITAL CONTROLLED VARIABLE GAIN AMPLIFIER 50 MHZ TO 4000 MHZ, 6 BIT Package: MCM, 32-Pin, 5.2 mm x 5.2 mm Features Broadband
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
PRELIMINARY MSW2T-2060-195/MSW2T-2061-195/MSW2T-2062-195 SP2T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP2T Switch 5mm x 8mm x 2.5mm Industry Leading Average Power Handling 100W
MSW2T /MSW2T /MSW2T SP2T Surface Mount High Power PIN Diode Switch
RELEASED MSW2T-2060-195/MSW2T-2061-195/MSW2T-2062-195 SP2T Surface Mount High Power PIN Diode Switch Features: Surface Mount SP2T Switch: 5mm x 8mm x 2.5mm Industry Leading Average Power Handling: 100W
CHT4016 RoHS COMPLIANT
RoHS COMPLIANT 4-16GHz 6-BIT DIGITAL ATTENUATOR GaAs Monolithic Microwave IC Description The CHT4016 is a 4-16GHz 6-bit digital attenuator designed to address a dynamic of 31.5dB by 0.5dB step. This device
SKYA21029: 0.1 to 3.8 GHz SP4T Antenna Switch
DATA SHEET SKYA21029: 0.1 to 3.8 GHz SP4T Antenna Switch Applications 2G/3G/4G/4G LTE, 4G LTE-A Embedded cellular telematics modules OBD-II cellular modems RF1 Features RF2 Broadband frequency range: 0.1
Preliminary C0.25 VDD N/C RF1 N/C N/C. Product Description. Ordering Information
RFSA74 Parallel Controlled Digital Step Attenuator 5MHz to 4MHz, 7-Bit,.5dB LSB Package Style: QFN 4-Pin, 4mm x 4 mm Features C.5 C C C4 C8 C6 4 3 9 Frequency Range 5MHz to 4MHz 7-Bit, 3.75dB Range,.5dB
Features = +5V. = +25 C, Vdd 1. = Vdd 2
v7.11 HMC1LC3 POWER AMPLIFIER, - GHz Typical Applications The HMC1LC3 is ideal for use as a medium power amplifier for: Microwave Radio & VSAT Military & Space Test Equipment & Sensors Fiber Optics LO
DPDT SWITCH GaAs MMIC
DPDT SWITCH GaAs MMIC NJG1528KC1 Revised Feb./16/01 Ver.2 GENERAL DESCRIPTION NJG1528KC1 is a GaAs high power DPDT switch MMIC for antenna switch of tri- and dual-mode cellular phone application such as
Features. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]
![Features. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]](/thumbs/85/92081906.jpg "Features. = +25 C, IF = 100 MHz, LO = +13 dbm, LSB [1]")
v1.6 3.5 - GHz Typical Applications The HMC21BMSGE is ideal for: Base stations, Repeaters & Access Points WiMAX, WiBro & Fixed Wireless Portables & Subscribers PLMR, Public Safety & Telematics Functional
High Isolation, Nonreflective, GaAs, SPDT Switch,100 MHz to 4 GHz HMC349AMS8G
Data Sheet High Isolation, Nonreflective, GaAs, SPDT Switch,1 MHz to 4 GHz FEATURES Nonreflective, 5 Ω design High isolation: 57 db to 2 GHz Low insertion loss:.9 db to 2 GHz High input linearity 1 db
SP5T SWITCH GaAs MMIC
SP5T SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG1667MD7 is a GaAS SP5T switch featured low insertion loss, high isolation and small size package, and suited for mobile terminal applications. The NJG1667MD7
Specification Min. Typ. Max.
High Power Reflective GaAs SP4T Switch FMS2016-005 HIGH POWER REFLECTIVE GaAs SP4T SWITCH Package: 3 mm x 3 mm QFN Product Description The FMS2016-005 is a low loss, high power, linear single-pole four-throw
OBSOLETE. Parameter Frequency (GHz) Min. Typ. Max. Units DC GHz GHz. Attenuation Range DC - 3 GHz 31 db
5 Typical Applications The HMC47LP3(E) is ideal for: Cellular; UMTS/3G Infrastructure ISM, MMDS, WLAN, WiMAX Microwave Radio & VSAT Test Equipment and Sensors Functional Diagram HMC47LP3 / 47LP3E v4.118
Preliminary Datasheet
Product Description Figure 2. Package Type The is a digitally controlled variable gain amplifier (DVGA) in a 6x6mm LGA package, with a frequency range of 4400 to 5000 MHz and an operating Vcc of 5.0V.
S-band T/R Control Module
S-band T/R Control Module Features Dual path, Transmit/Receive Operation 6-Bit Digital Attenuator, 6-Bit Digital Phase shifter and high Isolation SPDT Switch Low Insertion loss ~ 9.5dB Switch Isolation
OBSOLETE. = +25 C, Vdd = Vs= +5V, Vctl= 0/ +5V. Parameter Frequency Min. Typ. Max. Units DC GHz 37. db Gain (Maximum Gain State)
v.1212.5 db LSB GaAs MMIC 6-BIT DIGITAL Typical Applications The is ideal for: IF & RF Applications Cellular/3G Infrastructure WiBro / WiMAX / 4G Microwave Radio & VSAT Test Equipment and Sensors Functional
Features. = +25 C, Vdd = +10 V, Idd = 350 ma
HMC97APME v2.4 POWER AMPLIFIER,.2-22 GHz Typical Applications The HMC97APME is ideal for: Test Instrumentation Military & Space Functional Diagram Features High P1dB Output Power: + dbm High : 14 db High
GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier HMC637BPM5E
9 11 13 31 NIC 3 ACG1 29 ACG2 2 NIC 27 NIC 26 NIC GaAs, phemt, MMIC, Single Positive Supply, DC to 7.5 GHz, 1 W Power Amplifier FEATURES P1dB output power: 2 dbm typical Gain:.5 db typical Output IP3:
Features. = +25 C, Vs = +5V. Parameter Min. Typ. Max. Min. Typ. Max. Units Frequency Range MHz Gain
Typical Applications Functional Diagram The HMC32LP3 / HMC32LP3E is ideal for basestation receivers: GSM, GPRS & EDGE CDMA & W-CDMA Private Land Mobile Radio HMC32LP3 / 32LP3E AMPLIFIER, 00-1000 MHz Features
Features. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
HMC659LC5 LINEAR & POWER AMPLIFIERS - SMT. GaAs PHEMT MMIC POWER AMPLIFIER, DC - 15 GHz. Features. Typical Applications. General Description
v.61 Typical Applications The wideband PA is ideal for: Telecom Infrastructure Microwave Radio & VSAT Military & Space Test Instrumentation Fiber Optics Functional Diagram Features P1dB Output Power: +27.5
OBSOLETE. = +25 C, With Vdd = +5V & Vctl = 0/+5V. Parameter Frequency Min. Typ. Max. Units DC - 4 GHz GHz Attenuation Range DC - 10 GHz 10 db
Typical Applications The HMC8LP3E is ideal for: Test Equipment and Sensors ISM, MMDS, WLAN, WiMAX, WiBro Microwave Radio & VSAT Cellular Infrastructure Functional Diagram HMC8LP3E v.11 1 GaAs MMIC 1-BIT
RF1200 BROADBAND HIGH POWER SPDT SWITCH
BROADBAND HIGH POWER SPDT SWITCH Package Style: QFN, 6-pin, 2x2 Features Low Frequency - 2.5GHz Operation Low Insertion Loss: 0.3dB at 1GHz High Isolation: 26dB at 1GHz Low Control Voltage: 2.6V to 5.0V
SPDT SWITCH GaAs MMIC
NJG181K75 SPDT SWITCH GaAs MMIC GENERAL DESCRIPTION The NJG181K75 is a SPDT switch IC suited for switching transmit/receive signals at 82.11 a/b/g/n/ac applications. The NJG181K75 features low insertion
Low Noise Amplifier with Bypass for LTE
NJG117UX2 Low Noise Amplifier with Bypass for LTE GENERAL DESCRIPTION NJG117UX2 is low noise amplifier with bypass switch for LTE which covers frequency from 185 to 22MHz and from 23 to 269MHz. The NJG117UX2
Features. = +25 C, Vdd = +5V, Idd = 400mA [1]
![Features. = +25 C, Vdd = +5V, Idd = 400mA [1]](/thumbs/78/77182342.jpg "Features. = +25 C, Vdd = +5V, Idd = 400mA [1]")
v.61 Typical Applications The is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT Military & Space Features Saturated Output Power:.5 dbm @ 21% PAE High Output IP3: 34.5 dbm High Gain:.5
SKY LF: 0.02 to 4.0 GHz High Isolation SP4T Absorptive Switch with Decoder
DATA SHEET SKY13392-359LF:.2 to 4. GHz High Isolation SP4T Absorptive Switch with Decoder Applications GSM/CDMA/WCDMA/LTE cellular infrastructure Test and measurement systems Military communications Features
Features. = +25 C, Vdd 1, 2, 3 = +3V
v.11 HMC6LC AMPLIFIER, 6-2 GHz Typical Applications The HMC6LC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military