MGA GHz 10W High Efficiency Linear Power Amplifier Product Data Sheet
|
|
- Osborn Bennett
- 6 years ago
- Views:
Transcription
1 Features: 5 db Gain 4 dbm P- 3dB 33 dbm Linear 2.5% EVM (82. 64QAM) 25% Efficiency at 33 dbm Linear Output Power Fully Matched Input and Output for Easy Cascade + 28V Bias Voltage Surface Mount Package with RoHS Compliance MTTF > 85ºC ambient temperature Applications: 82.6d/e WiMax 82.b WLAN Point-To-Point Radio Applications Description: The MGA is a power amplifier with the State-of-the-Art linear power-added-efficiency between 2.4 GHz and 2.7 GHz frequency band. Based on advanced robust GaN device technology, the power-added-efficiency of this power amplifier is as high as 25% when it outputs 2W linear burst power with 2.5% EVM under the 82.6d/e 64QAM modulation schemes. The high efficiency linear power amplifier also has excellent reliability. Ideal applications include the driver and the output power stage of WiMax and WLAN infrastructures and access points. It also can be used for PTP (Point-To-Point) radio applications for this band. Typical RF Performance: Vds=28V,, Icq=8mA, Ta=25 ºC, Z=5 ohm Parameter Units Typical Data Frequency Range MHz Gain (Typ / Min) db 5 / 2 Gain Flatness (Typ / Max) +/-db. /.5 Input Return Loss db 8 Output Return Loss db 8 Output P3dB dbm 4 2.5% EVM dbm 33 Operating Current Range ma 5-4 Thermal Resistance C /W 5
2 Typical RF Performance: Vds=28.V, Icq=8mA, Z=5 ohm, Ta=25 ºC Gain(dB) MGA Gain Gain Freq(GHz) Return Loss(dB) MGA Return Loss Input Freq(GHz) Output 45 MGA Power(dBm) P- P-2 P Freq(GHz)
3 Typical RF Performance (Cont): Vds=28.V, Icq=8mA, Z=5 ohm, Ta=25 ºC MGA EVM and 2.4GHz MGA EVM and 2.7GHz EVM(%) EVM 5 Efficiency Channel Power(dBm) Efficiency(%) EVM(%) EV M 5 Ef f iciency Channel Power(dBm) Efficiency(%)
4 Absolute Maximum Ratings: (Ta= 25 C)* SYMBOL PARAMETERS UNITS ABSOLUTE MAXIMUM Vds Drain-Source Voltage V 5 Id Drain Current ma Ig Gate Current ma Pdiss DC Power Dissipation W 5 Pin max RF Input Power dbm +33 Tch Channel Temperature ºC 75 Tstg Storage Temperature ºC -55 to 5 *Operation of this device above any one of these parameters may cause permanent damage. Typical Scattering Parameters: Vds=28V, Icq=8mA,Z=5 ohm, Ta=25 ºC Freq(GHz) db(s) Ang(S) db(s2) Ang(S2) db(s2) Ang(S2) db(s22) Ang(S22)
5 Mechanical Information: This Package is RoHS compliant
6 Application Circuit: The evaluation board material, shown in Figure A, is Rogers 43 material, 2 mil thick. The RF trace weight is 2 oz. Through holes with a diameter of 2 mils are spread uniformly over the center paddle for thermal relief and ground. Via holes underneath the paddle are back filled with conductive epoxy. It is recommended that via holes be placed nearby the DC bias connector to maintain ground continuity between the top layer and bottom ground planes. Mounting holes near the unit will help secure the board to the chassis, minimize ground current loops and improve thermal conductivity in the absence of sweat soldering the board to the chassis. Figure A Evaluation Board Biasing with quarter-wave stubs at the gate and drain are shown in Figure A. The impedance of the quarter wave structures is cyclical with frequency. A RF short is observed at frequencies that are even multiples of a quarterwavelength and an open-impedance is observed at frequencies that are odd multiples of a quarter-wavelength. A 56 Ohm resistor is added in series to the gate bias. The effective impedance is increased which reduces the risk of oscillations. The 56 ohm resistor is not shown in Figure A. Through holes underneath the package is required to connect the top and bottom grounds and to improve thermal conductivity.
7 Application Notes: carriers, GHz, EVM=2.48% IEEE OFDM Frequency: 2.4 GHz Signal Level Setting: 7.2 dbm Ref. Level / Ext. A tt: 27.2 dbm / 7.2 db Sweep Mode: Continuous Trigger Mode: External Trigger O ffset: - µs Burst Type: OFDM DL Burst Modulation: ALL No Of Data Symbols: /2425 Result Summary No. of Bursts 7 Min Mean Limit Max Limit Unit EVM All Carriers % EVM Data Carriers % EVM Pilot Carriers % IQ Offset % Gain Imbalance % Q uadrature Error Center Frequency Error ± ± 92 Hz Clock Error ± ± 8 ppm Burst Power dbm Crest Factor db RSSI dbm RSSI Standard Deviation.52 db CINR db CINR Standard Deviation 2.97 db Running... Date: 5.DEC.28 :7:39
8 Application Notes (Cont): Typical ACPR response for % EVM, 2.4GHz IEEE OFDM Frequency: 2.4 GHz Signal Level Setting: 8.3 dbm Ref. Level / Ext. A tt: 9.8 dbm / 7.2 db Sweep Mode: C ontinuous Trigger Mode: External Trigger Offset: - µs Burst Type: OFDM DL Burst Modulation: ALL No Of Data Symbols: /2425 Spectrum Emission Mask Tx Channel: Bandwidth 3.5 MHz Power 3.92 dbm Start Freq. Rel. Stop Freq. Rel. RBW Freq. at? to Limit Pwr Abs Pwr Rel? to Limit MHz -7. MHz 3 khz GHz -4.4 dbm db db -7. MHz -3.7 MHz 3 khz GHz dbm db db -3.7 MHz -2.5 MHz 3 khz GHz dbm db -4.2 db -2.5 MHz -.75 MHz 3 khz GHz dbm db db.75 MHz 2.5 MHz 3 khz GHz dbm db db 2.5 MHz 3.7 MHz 3 khz GHz dbm db db 3.7 MHz 7. MHz 3 khz GHz dbm db db 7. MHz 8.75 MHz 3 khz GHz dbm db -5.7 db SpectrumMASK ETSI RBW 3 khz Marker dbm VBW Hz GHz Ref 9.8 dbm Att/EL 2. /. db SWT 5.7 s Sweep of 27 CHECK RESULT Pass Spect Mask dbr PK CLRWR B TRG LVL -33Spect Mask dbr MHz.75 MHz/div MHz Running... Date: 5.DEC.28 :8:3
9 Application Notes (Cont): carriers, GHz, EVM=2.48% IEEE OFDM Frequency: 2.7 GHz Signal Level Setting: 7.5 dbm Ref. Level / Ext. Att: 27.5 dbm / 7.2 db Sweep Mode: Continuous Trigger Mode: External Trigger O ffset: - µs Burst Type: OFDM DL Burst Modulation: ALL No O f Data Symbols: /2425 Result Summary No. of Bursts 7 Min Mean Limit Max Limit Unit EVM All Carriers % EVM Data Carriers % EVM Pilot Carriers % IQ Offset % Gain Imbalance % Q uadrature Error Center Frequency Error ± ± 26 Hz Clock Error.2 -. ± ± 8 ppm Burst Power dbm Crest Factor db RSSI dbm RSSI Standard Deviation.6 db CINR db CINR Standard Deviation 9.8 db Running... Date: 5.DEC.28 ::26
10 Application Notes (Cont): Typical constellation response for % EVM, 2.7GHz IEEE OFDM Frequency: 2.7 GHz Signal Level Setting: 7.5 dbm Ref. Level / Ext. A tt: 27.5 dbm / 7.2 db Sweep Mode: Continuous Trigger Mode: External Trigger O ffset: - µs Burst Type: OFDM DL Burst Modulation: ALL No O f Data Symbols: /2425 Capture Memory No of Samples 8 Time to Capture Buffer Start828. µs Capture Time 2 ms Gate Off Marker dbm Ref 27.5 dbm Att/El 2. / 5. dbburst 7 (7) s ms 2. ms/div 2. ms Constellation vs Symbol Marker Q uadrature Inphase A TRG LVL 7. B Running... Date: 5.DEC.28 :2:5
MGA GHz 10W High Efficiency Linear Power Amplifier Product Data Sheet
Features: 2 db Gain 4 dbm P- 3dB 33 dbm Linear Pout @ 2.5% EVM (82. 64QAM) 25% Efficiency at 33 dbm Linear Output Power Fully Matched Input and Output for Easy Cascade + 28V Bias Voltage Surface Mount
More informationWPS GHz Linear Power Amplifier Data Sheet
Features: 4.0 db Gain 36 dbm PdB 50 dbm IP3 EVM < 2.0% at 29 dbm Pout Prematch for Easy Cascade Pb Free Surface Mount Pkg MTTF > 00 yrs @ T C 50 C Applications: 802.6 WiMax 802. WLAN Wireless Communications
More informationWPS GHz Linear Power Amplifier
Features: 4.0 db Gain 36 dbm PdB 50 dbm IP3 EVM < 2.0% at 29 dbm Pout Applications: 802.6 WiMax 802. WLAN Wireless Communications Telecomm Infrastructure Prematch for Easy Cascade Pb Free Surface Mount
More informationWPS GHz Linear Power Amplifier Data Sheet
Features 15.0 db Gain 36 dbm P1dB 48 dbm IP3 EVM < 2.5% at 29 dbm Pout Applications 802.16 WiMax 802.11 WLAN Wireless Communications Telecomm Infrastructure Prematch for Easy Cascade Pb Free Surface Mount
More informationWPS GHz Linear Power Amplifier Data Sheet
Features 15.0 db Gain 36 dbm P1dB 48 dbm IP3 EVM < 2.5% at 29 dbm Pout Prematch for Easy Cascade Pb Free Surface Mount Pkg MTTF > 100 yrs @ T C 150 C Applications 802.16 WiMax 802.11 WLAN Wireless Communications
More informationMGA GHz 10W High Efficiency High Power Amplifier Data Sheet and Application Note
FEATUES GaN Based 20% Efficiency at 33 dbm Linear Output Power 40 dbm P- 3dB 33 dbm Linear Pout @ 2.5% EVM (802.11 64QAM) 12 db Gain Fully Matched Input and Output for Easy Cascase +28V Bias Voltage ohs
More informationMGA HP GHz 12W High Efficiency GaN Power Amplifier Data Sheet
Features: 13 db Gain 41 dbm and LSG 10 db CW OIP3 54 dbm at 34 dbm per tone PAE 46% at 42 dbm Matched Input and Output for Easy Cascade Surface Mount Package with RoHS Compliance Thermal Resistance is
More informationSZA-2044 / SZA-2044Z GHz 5V 1W Power Amplifier
Product Description Sirenza Microdevices SZA-244 is a high efficiency class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
More informationMMA M4. Features:
Features: Frequency Range: 0.1 26.5 GHz P3dB: +27 dbm Gain: 12.5 db Vdd =8 to 12 V Ids =250 to 500 ma Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN 4x4mm package Applications:
More informationMMA C3 6-22GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vdd=5V P3dB: 19.5 dbm @Vdd=5V Gain: 14 db Vdd =3 to 6 V Ids = 130 ma Input and Output Fully Matched to 50 Ω Applications: Communication systems Microwave
More informationMMA GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 1 2 3 4 5 32 31 30 29 28 27 26 25 24
More informationMMA M GHz, 1W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 37-41 GHz P1dB: +30.5 dbm IM3 Level: -41 dbc @Po=18dBm/tone Gain: 22 db Vdd = 4 to 6 V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector
More informationMMA M GHz 4W MMIC Power Amplifier Data Sheet
Features: Frequency Range: 27 33 GHz P1dB: +36 dbm IM3 Level: -38 dbc @Po=20dBm/tone Gain: 22 db Vdd = 6V Idsq = 1500 to 2800mA Input and Output Fully Matched to 50 Ω Surface Mount, RoHs Compliant QFN
More informationMMA GHz 1W Traveling Wave Amplifier Data Sheet
Features: Frequency Range:.1 2 GHz P3dB: +29 dbm Gain: 12.5 db Vdd =12 V Ids =5 ma Input and Output Fully Matched to 5 Ω Applications: Fiber optics communication systems Microwave and wireless communication
More informationMMA GHz, 0.1W Gain Block Data Sheet
Features: Frequency Range: 6 22 GHz P1dB: 18.5 dbm @Vds=5V Psat: 19.5 dbm @ Gain: 14 db Vdd =3 to 6 V Ids = 13 ma Input and Output Fully Matched to 5 Ω Applications: Communication systems Microwave instrumentations
More informationMMA R4 30KHz-50GHz Traveling Wave Amplifier Data Sheet October 2012
Features: Frequency Range: 30KHz 40 GHz P1dB: +22 dbm Vout: 7V p-p @50Ω Gain: 13.5 db Vdd =7 V Ids = 200 ma Input and Output Fully Matched to 50 Ω In 4x4mm QFN package Applications: Fiber optics communication
More informationMMA M GHz, 2W Power Amplifier Data Sheet
Features: Frequency Range: 12.5 15.5 GHz P1dB: 32 dbm IM3 Level -44dBc @Po=dBm/tone Gain: 23.5 db Vdd =4 to 6 V Ids = 10 to 2500 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector Surface
More informationGaAs MMIC Power Amplifier
GaAs MMIC Power Amplifier AM324036WM-BM-R AM324036WM-FM-R Aug 10 Rev 6 DESCRIPTION AMCOM s is part of the GaAs MMIC power amplifier series. It has 29dB gain and 36dBm output power over the 3.2 to 4.0GHz
More informationFeatures: Applications: Description: Absolute Maximum Ratings: (Ta= 25 C)* 28-31GHz 2.5W MMIC Power Amplifier Preliminary Data Sheet
Features: Frequency Range: 28-31 GHz P3dB: +34 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 20 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched to 50 Ω Integrated Output Power Detector
More informationMMA GHz, 1W MMIC Power Amplifier Data Sheet March, 2012
Features: Frequency Range: 37 40 GHz P1dB: +30.5 dbm IM3 Level: -40 dbc @Po=18dBm/tone Gain: 22 db Vdd = 5V Idsq = 1000 to 2000 ma Input and Output Fully Matched to 50 Ω Integrated power detector Applications:
More informationData Sheet. ALM GHz 1.0GHz 2 Watt High Linearity Amplifier. Description. Features. Specifications. Component Image.
ALM-32120 0.7GHz 1.0GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32120 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
More informationPXI WiMAX Measurement Suite Data Sheet
PXI WiMAX Measurement Suite Data Sheet The most important thing we build is trust Transmit power Spectral mask Occupied bandwidth EVM (all, data only, pilots only) Frequency error Gain imbalance, Skew
More informationMMA R GHz 4W MMIC Power Amplifier Data Sheet Old package not recommended for new designs
Old package not recommended for new designs Features: Frequency Range: 28-31 GHz P1dB: +36 dbm IM3 Level: -35 dbc @Po=26dBm/tone Gain: 22 db Vdd = 5 to 6V Idsq = 1200 to 3000mA Input and Output Fully Matched
More informationPRODUCTION DATA SHEET
InGaP HBT 4.5 GHz Power Amplifier The is a power amplifier optimized for the FCC Unlicensed National Information Infrastructure (U-NII) band, HyperLAN2 and Japan WLAN applications in the 4.9 5.9 GHz frequency
More informationMMA R GHz, 0.1W Gain Block Data Sheet October, 2012
Features: Frequency Range: 17 43 GHz P1dB: 18 dbm Psat: 2 dbm Gain: 21 db Vdd =4.5 V (3 V to 5 V) Ids = 25 ma (15mA to 3mA) Input and Output Fully Matched to 5 Ω 2x and 3x Frequency multiplier applications
More informationdbm Output Power at 1dB Compression 3.6GHz
Product Description Sirenza Microdevices SZA-344 is a high linearity class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. This HBT amplifier
More informationCeramic Packaged GaAs Power phemt DC-10 GHz
Ceramic Packaged GaAs Power phemt DC- GHz DESCRIPTION AMCOM s is part of the BI series of GaAs phemts. This part has a total gate width of 6mm. The is designed for high power microwave applications, operating
More informationCMD187C GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver amplifier housed in a leadless
More informationMAAP PKG003 YYWW AP067G XXX MACOM. Amplifier, Power, 2W GHz. Primary Applications: M/A-COM Products Rev D. Features.
Features 2 Watt Saturated Output Power Level Variable Drain Voltage (6-V) Operation x mm Lead PQFN Package RoHS Compliant Description The MAAP-67-PKG3 is a 3-stage 2 W power amplifier with on-chip bias
More informationCeramic Packaged GaAs Power phemt DC-12 GHz
Ceramic Packaged GaAs Power phemt DC-12 GHz DESCRIPTION AMCOM s is a discrete GaAs phemt that has a total gate width of 1.mm. It is in a ceramic BH package for operating up to 12 GHz. The BH package has
More informationData Sheet. MGA-685T6 Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V 10 ma (Typ.
MGA-685T6 Current-Adjustable, Low Noise Amplifier Data Sheet Description The MGA-685T6 is an easy to use GaAs MMIC amplifier that offer excellent linearity and low noise figure for application from.1 to
More informationMMA M GHz, 3W Power Amplifier Data Sheet
Features: Frequency Range: 21 27 GHz Psat: 34 dbm IM3 Level -40dBc @Po=20dBm/tone Gain: 25 db Vdd =6 V Ids = 1500 to 2800 ma Input and Output Fully Matched to 50 Ω Integrated RF power detector 1 2 3 4
More informationAG303-63PCB. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz + dbm PdB @ 9 MHz +6 dbm OIP @ 9 MHz Single Voltage Supply Internally matched to Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More information6-18 GHz Low Phase Noise Amplifier
-1 GHz Low Phase Noise Amplifier Features Functional Block Diagram Wide bandwidth Low phase noise Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD24C4 is a wideband
More information2-20 GHz Driver Amplifier
2-2 GHz Driver Amplifier Features Functional Block Diagram Wide bandwidth High linearity Low current consumption Pb-free RoHs compliant 4x4 mm SMT package Description The CMD187C4 is a wideband driver
More informationSZP-5026Z GHz 2W InGaP Amplifier
Product Description Sirenza Microdevices SZP-Z is a high linearity single stage class AB Heterojunction Bipolar Transistor (HBT) amplifier housed in a proprietary surface-mountable plastic encapsulated
More informationCMD233C GHz Distributed Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Wide bandwidth Single positive supply voltage Low noise figure Pb-free RoHs compliant 4x4 QFN package Description The CMD233C4 is a wideband GaAs MMIC low noise amplifier
More informationData Sheet. ALM GHz 3.9GHz 2 Watt High Linearity Amplifier. Description. Features. Component Image. Specifications WWYY XXXX
ALM-32320 3.3GHz 3.9GHz 2 Watt High Linearity Amplifier Data Sheet Description Avago Technologies ALM-32320 is a high linearity 2 Watt PA with good OIP3 performance and exceptionally good PAE at 1dB gain
More informationCMD158C GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.0 V, T A = 25 o C, F = 11 GHz
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 4x4 QFN package Description The CMD158C4 is
More informationPhase Noise. Phase Noise (dbc/hz) Storage Temp. Range -55 to +125 ºC. Bias Voltage (Digital) Bias Voltage (Converter) Bias Voltage (VCO)
SURFACE MOUNT MODEL: LFCPH85-8 - 5 MHz FEATURES: Exceptionally Low Phase Noise Lead Free - RoHS Compliant Patented REL-PRO Technology Small Size, Surface Mount Up to 6 selectable frequencies Buffered Output
More informationCMD283C GHz Ultra Low Noise Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram Ultra low noise figure High gain broadband performance Low power dissipation Pb-free RoHs compliant 3x3 QFN package Description The CMD283C3 is a broadband MMIC low noise
More information1-24 GHz Distributed Driver Amplifier
Features Functional Block Diagram Wide bandwidth High linearity Single positive supply voltage On chip bias choke Description The CMD197C4 is a wideband GaAs MMIC driver amplifier housed in a leadless
More informationD1H010DA1 10 W, 6 GHz, GaN HEMT Die
D1H010DA1 10 W, 6 GHz, GaN HEMT Die D1H010DA1 by Dynax is a Gallium Nitride (GaN) high electron mobility transistor (HEMT). The D1H010DA1, operating at 48 V, offers high efficiency, great gain, easy of
More informationAG302-86PCB. Product Features. Product Description. Functional Diagram. Applications. Typical Performance (1) Specifications (1)
AG-6 Product Features DC 6 MHz. db Gain @ 9 MHz +. dbm PdB @ 9 MHz +6 dbm OIP@ 9 MHz Single Voltage Supply Internally matched to Ω Robust V ESD, Class C Lead-free/green/RoHS-compliant SOT-6 package Applications
More information2.4 GHz Front-End Module SST12LF01
FEATURES: Gain: Typically 12 db gain across 2.4 2.5 GHz for Receiver (RX) chain. Typically 29 db gain across 2.4 2.5 GHz over temperature C to +8 C for Transmitter (TX) chain. Low-Noise Figure Typical
More informationPARAMETER TEST CONDITIONS TYPICAL DATA UNITS Frequency Range 5-18 GHz 6-8 GHz GHz. 18 GHz GHz GHz
FEATURES Wide Band: 5 to GHz NF (ext match): 3.4 db @ 6 GHz 3.0 db @ GHz 3.7 db @ GHz P-1dB: 21 dbm OIP3: 29 dbm Gain: 19 db Bias Condition: VDD = 4.5V IDD = 135 ma 50-Ohm On-chip Matching Unconditionally
More informationit to 18 GHz, 2-W Amplifier
it218 to 18 GHz, 2-W Amplifier Description Features Absolute Maximum Ratings Electrical Characteristics (at 2 C) -ohm system V DD = 8 V Quiescent current (I DQ = 1.1 A The it218 is a three-stage, high-power
More informationAH1. Product Features. Product Description. Functional Diagram. Applications. Specifications (1) Typical Performance (4) Absolute Maximum Rating
Product Features 25 4 MHz +41 dbm OIP3 3 db Noise Figure.5 db Gain +22 dbm P1dB Lead-free/Green/RoHS-compliant SOT-8 Package Single +5 V Supply MTTF > 1 years Applications Mobile Infrastructure CATV /
More informationQPF GHz 1W GaN Front End Module
QPF41 26 3 GHz 1W GaN Front End Module Product Description The QPF41 is a multi-function Gallium Nitride MMIC front - end module targeted for 28 GHz phased array G base stations and terminals. Fabricated
More informationGSM/EDGE Application Firmware R&S FS-K5 for R&S FSP and R&S FSU
GSM/EDGE Application Firmware R&S FS-K5 for R&S FSP and R&S FSU The solution for easy and fast GSM and EDGE measurements GSM/EDGE push-button measurements Fast modulation spectrum routine Easy to use Accurate
More informationMwT-1789SB GHz Packaged FET
Features: Designed for single voltage operations Ideal for 0.5 4.0 GHz High Linearity / High Dynamic Range Applications Excellent RF Performance: o 44 dbm IP3 o 65 dbc ACPR o 28 dbm P1dB o 18 db SSG @
More informationCMD170P GHz Driver Amplifier. Features. Functional Block Diagram. Description
Features Functional Block Diagram High output power On-chip detector All positive bias Pb-free RoHs compliant 4x4 QFN package Description The CMD170P4 is a GaAs MMIC driver amplifier housed in a leadless
More informationData Sheet. AMMP GHz High Gain Amplifier in SMT Package. Description. Features. Applications. Package Diagram. Functional Block Diagram
AMMP- GHz High Gain Amplifier in SMT Package Data Sheet Description The AMMP- MMIC is a GaAs wide-band amplifier in a surface mount package designed for medium output power and high gain over the - GHz
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of mm (Eight 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
More information2.3 GHz to 2.4 GHz WiMAX Power Amplifier ADL5570
2.3 GHz to 2. GHz WiMAX Power Amplifier ADL5570 FEATURES Fixed gain of 29 db Operation from 2.3 GHz to 2. GHz EVM 3% at POUT = 25 dbm with 6 QAM OFDMA Input internally matched to 50 Ω Power supply: 3.2
More information25W Power Packaged Transistor. GaN HEMT on SiC
25W Power Packaged Transistor GaN HEMT on SiC Description The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband solutions for a variety
More informationGaN/SiC Bare Die Power HEMT DC-15 GHz
GaN/SiC Bare Die Power HEMT DC-15 GHz DESCRIPTION AMCOM s is a discrete GaN/SiC HEMT that has a total gate width of 5mm (Four 1.mm FETs in parallel). It is a bare die which can be operated up to 15 GHz.
More information0.5-20GHz Driver. GaAs Monolithic Microwave IC
Gain, NF / P1dB, Pout WWG A3667A A3688A UMS 667A 688A MS YYWWG GaAs Monolithic Microwave IC Description The is a distributed Driver Amplifier that operates between 0.5 and 20GHz. It is designed for a wide
More informationCMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD8P3 is
More informationCMD158P GHz Driver Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 5.
Features Functional Block Diagram Broadband performance High output power Low current consumption Single supply voltage: +5.0 V @ 95 ma Pb-free RoHs compliant 3x3 QFN package Description The CMD8P3 is
More informationAM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R
AM003536WM-BM-R AM003536WM-EM-R AM003536WM-FM-R DESCRIPTION AMCOM s is an ultra-broadband GaAs MMIC power amplifier. It has 22 db gain and 36dBm output power over the 0.01 to 3.5 GHz band. This MMIC is
More informationFeatures. = +25 C, Vdd = +15V, Vgg2 = +9.5V [1], Idq = 500 ma [2]
v3.41 Typical Applications Features The is ideal for: Test Instrumentation Military & Space Fiber optics Functional Diagram P1dB Output Power: + dbm Psat Output Power: + dbm High Gain: db Output IP3: 42
More informationData Sheet. MGA Current-Adjustable, Low Noise Amplifier. Description. Features. Specifications at 500 MHz; 3V, 10 ma (Typ.
MGA-5 Current-Adjustable, Low Noise Amplifier Data Sheet Description Avago Technologies MGA-5 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent linearity and low noise figure for
More informationVCC1 GND IN GND LOP LON GND GND. Product Description. GaAs HBT GaAs MESFET InGaP HBT
Direct Quadrature Modulator 145MHz to 27MHz RFMD214 DIRECT QUADRATURE MODULATOR 145MHz TO 27MHz Package: QFN, 24-Pin, 4mm x 4mm VCC1 IN IP 24 23 22 21 2 19 Features ACPR Performance: -7dBc Typ. for 1-Carrier
More informationCHX2090-QDG RoHS COMPLIANT
RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The CHX2090-QDG is a cascadable frequency doubler monolithic circuit, which integrate an output buffer amplifier that produces
More informationTGA4533-SM K-Band Power Amplifier
Applications Point-to-Point Radio K-Band Sat-Com QFN 4x4 mm L Product Features Functional Block Diagram Frequency Range: 21.2 23.6 GHz Power: dbm Psat, 31 dbm P1dB Gain: 22 db TOI: 41 dbm at 21 dbm SCL
More informationSimplified Device Schematic. Pin 18. Pin 8. Pin 16. Stage 1 Bias. Stage 2 Bias. Pin 10
7MHz to 2.7GHz 5V 1W Power Amplifier SZA-244(Z) 7MHz to 2.7GHz 5V 1W Power Amplifier Package: QFN, 4mm x 4mm Product Description RFMD s SZA-244 is a high efficiency class AB heterojunction bipolar transistor
More informationAdvanced Information: AI GHz Low Noise Amplifier. GaAs Monolithic Microwave IC
: AI1801 GaAs Monolithic Microwave IC UMS has developed a two-stage self-biased wide band monolithic Low Noise Amplifier in leadless surface mount hermetic metal ceramic 6x6mm² package. It operates from
More informationFeatures. Gain: 17 db. OIP3: 25 dbm. = +25 C, Vdd 1, 2 = +3V
v.7 HMCLC Typical Applications The HMCLC is ideal for use as a LNA or driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment and Sensors Military & Space Functional
More informationFeatures. Parameter Min Typ. Max Min Typ. Max Min Typ Max Units Frequency Range GHz Gain
Typical Applications The HMC82LP4E is ideal for: Point-to-Point Radios Point-to-Multi-Point Radios VSAT & SATCOM Marine Radar Military EW & ECM Functional Diagram Features High Saturated Output Power:
More informationGallium Nitride MMIC Power Amplifier
Gallium Nitride MMIC Power Amplifier August 2015 Rev 4 DESCRIPTION AMCOM s is an ultra-broadband GaN MMIC power amplifier. It has 21dB gain, and >41dBm output power over the 0.03 to 6GHz band. This MMIC
More informationData Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin connections and Package Marking
MGA-31816 0.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31816 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
More informationE-PHEMT GHz. Ultra Low Noise, Low Current
Ultra Low Noise, Low Current E-PHEMT 0.45-6GHz Product Features Low Noise Figure, 0.5 db Gain, 16 db at 2 GHz High Output IP3, + dbm Low Current, ma Wide bandwidth External biasing and matching required
More informationGallium Nitride MMIC 5W DC 10.0 GHz Power Amplifier
Gallium Nitride MMIC W DC. GHz Power Amplifier Oct 17 P2 DESCRIPTION AMCOM s is a broadband GaN MMIC power amplifier. It has 13dB gain, and 37 dbm output power over the DC to GHz band. The is in a ceramic
More information40W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Id (A) Description 40W Power Packaged Transistor The is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
More informationTETRA Tx Test Solution
Product Introduction TETRA Tx Test Solution Signal Analyzer Reference Specifications ETSI EN 300 394-1 V3.3.1(2015-04) / Part1: Radio ETSI TS 100 392-2 V3.6.1(2013-05) / Part2: Air Interface May. 2016
More informationFeatures. = +25 C, Vs = +5V, Vpd = +5V, Vbias=+5V
v4.1217 HMC49LP4E Typical Applications This amplifier is ideal for use as a power amplifier for 3.3-3.8 GHz applications: WiMAX 82.16 Fixed Wireless Access Wireless Local Loop Functional Diagram Features
More informationCHA3565-QAG RoHS COMPLIANT
Sij & NF (db) RoHS COMPLIANT Description GaAs Monolithic Microwave IC in SMD leadless package The is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications,
More informationTGA2612-SM 6 12 GHz GaN LNA
Product Description Qorvo s is a packaged broadband Low Noise Amplifier fabricated on Qorvo s QGaN 0.um GaN on SiC process. Covering 6, the TGA2612- SM typically provides >23 dm small signal gain, 19 dbm
More informationFeatures. = +25 C, Vdd1, 2, 3 = 5V, Idd = 250 ma*
v.4 HMC498LC4 Typical Applications Features The HMC498LC4 is ideal for use as a LNA or Driver amplifier for: Point-to-Point Radios Point-to-Multi-Point Radios & VSAT Test Equipment & Sensors Military End-Use
More informationData Sheet. MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function 31YM. Description. Features
MGA-231T6 High-Gain GPS LNA with Variable Current and Shutdown Function Data Sheet Description Avago Technologies MGA-231T6 is a low-noise amplifier (LNA) designed for GPS/ISM/Wimax applications in the
More information2 3 ACG1 ACG2 RFIN. Parameter Min Typ Max Units Frequency Range
Features Functional Block Diagram Ultra wideband performance High linearity High output power Excellent return losses Small die size 2 3 ACG1 ACG2 RFOUT & Vdd Description RFIN 1 The CMD29 is wideband GaAs
More informationData Sheet. AMMC GHz 0.2 W Driver Amplifier. Features. Description. Applications
AMMC-6333 18 33 GHz.2 W Driver Amplifier Data Sheet Chip Size: x 13 m (1 x 51 mils) Chip Size Tolerance: ± 1 m (±.4 mils) Chip Thickness: 1 ± 1 m (4 ±.4 mils) Pad Dimensions: 1 x 1 m (4 x 4 ±.4 mils) Description
More informationApplications Ordering Information Part No. ECCN Description TGA2535-SM 3A001.b.2.b X-band Power Amplifier
Applications Point-to-Point Radio X-Band Communications QFN 5x5mm 24L Product Features Functional Block Diagram Frequency Range: 10 12 GHz TOI: 43 dbm Power: 34.5 dbm Psat, 33 dbm P1dB Gain: 24 db Return
More informationAM153540WM-BM-R AM153540WM-EM-R AM153540WM-FM-R
AM15354WM-BM-R AM15354WM-EM-R AM15354WM-FM-R November 217 DESCRIPTION AMCOM s AM15354WM-BM-R AM15354WM-EM-R and AM15354WM-FM-R are part of the GaAs HiFET MMIC power amplifier series. It is a 2-stage GaAs
More information2.4~2.5 GHz 1 Watt Power Amplifier Pin Details
2.~2. GHz Watt Power Amplifier 23.7. is a linear, two-stages power amplifier MMIC with high output power in 2.GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device
More informationLow Phase Noise C band HBT VCO. GaAs Monolithic Microwave IC
Frequency (GHz) GaAs Monolithic Microwave IC Description The is a low phase noise C band HBT voltage controlled oscillator that integrates negative resistor, varactors and buffer amplifiers. It provides
More informationRF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
More informationCMD132P GHz Low Noise Amplifier. Features. Functional Block Diagram. Description. Electrical Performance - V dd = 3.
Features Functional Block Diagram Ultra low noise figure Low current consumption High gain broadband performance Single supply voltage: +3.6 V @ 3 ma Pb-free RoHs compliant 3x3 QFN package Description
More informationFeatures. Specifications. Applications. Vcc
AVT-55689 50 6000 MHz InGaP HBT Gain Block Data Sheet Description Avago Technologies AVT-55689 is an economical, easy-touse, general purpose InGaP HBT MMIC gain block amplifier utilizing Darlington pair
More informationBandwidth and dynamic range for future systems and technologies
Signal nalyzers R&S FSQ Bandwidth and dynamic range for future systems and technologies The R&S FSQ is fully in line with the trend towards systems with higher data rates (e.g. wireless LN) and multicarrier
More informationGND N/C GND RF IN N/C N/C N/C GND
MAAP-11246 Features High Gain: 23 db P1dB: dbm P SAT : 33 dbm IM3 Level: -22 dbc @ P OUT 27 dbm/tone Power Added Efficiency: 24% at P SAT Lead-Free 5 mm AQFN 32-lead Package RoHS* Compliant Description
More information15W Power Packaged Transistor. GaN HEMT on SiC
Gain (db), Pout (dbm) & PAE (%) Drain Current (A) CHK15A-QIA Description The CHK15A-QIA is an unmatched packaged Gallium Nitride High Electron Mobility Transistor. It offers general purpose and broadband
More informationMGA GHz 3 V, 17 dbm Amplifier. Data Sheet. Features. Description. Applications. Surface Mount Package. Simplified Schematic
MGA-853.1 GHz 3 V, 17 dbm Amplifier Data Sheet Description Avago s MGA-853 is an economical, easy-to-use GaAs MMIC amplifier that offers excellent power and low noise figure for applications from.1 to
More informationTGM2635-CP X-Band 100 W GaN Power Amplifier
Product Overview Qorvo s TGM2635 CP is a packaged X-band, high power amplifier fabricated on Qorvo s production 0.25um GaN on SiC process. The TGM2635 CP operates from 7.9 11 GHz and provides 100 W of
More information18W X-Band High Power Amplifier. GaN Monolithic Microwave IC
CHA8611-99F GaN Monolithic Microwave IC Description V+ The CHA8611-99F is a two stage High Power Amplifier operating between 8.5 and 11GHz and providing typically 18W of saturated output power and 43%
More informationTGA2521-SM GHz Linear Driver Amplifier Key Features Measured Performance
17-24 GHz Linear Driver Amplifier Key Features Frequency Range: 17-24 GHz 25.5 dbm Nominal Psat, 23.5 dbm Nominal P1dB Gain: 20 db OTOI: 33 dbm Typical Bias: Vd = 5 V, Idq = 320 ma, Vg = -0.5 V Typical
More informationData Sheet. MGA W High Linearity Driver Amplifier. Features. Description. Specifications. Pin Connections and Package Marking
MGA-31716.1 W High Linearity Driver Amplifier Data Sheet Description Avago Technologies MGA-31716 is a high linearity driver MMIC Amplifier housed in a standard QFN 3X3 16 lead plastic package. It features
More information5-21GHz Driver Amplifier. GaAs Monolithic Microwave IC in SMD leadless package
Description GaAs Monolithic Microwave IC in SMD leadless package The CHA3664-QAG is a two-stage general purpose monolithic medium power amplifier. It is designed for a wide range of applications, from
More information16-32GHz Low Noise Amplifier. GaAs Monolithic Microwave IC in SMD package
Linear Gain Description GaAs Monolithic Microwave IC in SMD package The is a three-stage self-biased wide band monolithic low noise amplifier. The circuit is manufactured with a standard phemt process:
More information