Modeling and Simulation of Solar Photovoltiac Module using Matlab-Simulink

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1 Modeling nd Simultion of Solr Photovoltic Modulsing Mtlb-Simulin Mittrpl ssistnt Professor, Deprtment of Electronics nd Communiction Engineering, BPS Women University, Khnpur Kln, Sonept, ndi. bstrct- Esclting energy demnds, greenhouse gses, climte chnges nd evisvrtion of fossil fuel re mjor issues in front of ll over the world. he one of optimum solution to these problems is the cceptnce nd deployment to renewble energies resources. mong ll the existing renewble energy sources, solr energy hs momentum due to its mny fetures. Usge of solr energy cn ply significnt role in economic development nd improvement in ulity of life. he objective of present investigtion is to discuss mthemticl modelling nd design simultion models of otovoltic modules under given environment ysicl conditions. System prmeters of otovoltic module such s SC, short circuit current, OC, open circuit voltge, P M mximum output power, nd their corresponding current nd voltge investigted under environment fctors. Keywords Solr Silicon Cells (SSC), Mthemticl Modelling Photo oltic Module, Circuit model of Module, Simultion Modeling, Chrcteriztion of P module.. NRODUCON he Photovoltic cells re solid stte electronic device which convert oto energy into electricl energy [-]. he principle of P cells is otovoltic effect. he otovoltic effect is generting electrons due to bombrding of otons. Energy of the oton lrger thn forbidden gp energy of semiconductor mteril cn generte electrons. he otovoltic effect is ysicl or chemicl effect. he P cell efficiency is rtio of input power due to incidence of otons nd electric energy tht is generted by the cell. he current nd power of P cell or module re function of solr irrdince nd temperture. he P systems cn be instlled nywhere, since solr energy is fesible lmost in ll loctions of world. he solr energy is most promising form of the renewble energy which is incresing continuously due to dvncement in technology nd wreness mong peoples. Solr otovoltic hs long life, low mintennce cost, esy to instll, no noise, simple to operte. n present investigtion, the current nd power chrcteristics of P module re nlyzed by using the modeling nd simultion of the P module. he chrcteristics depend on environmentl fctors solr irrdition nd temperture. Simultion models re developed on the gricl user interfce Simulin environment. Moreover, other system prmeters of otovoltic module such s SC, short circuit current, OC, open circuit voltge, P M mximum output power, nd their corresponding current nd voltge investigted under environment fctors. he present investigtion is employed to chieve following objectives: o provide n ccount on mthemticl modeling of otovoltic cell nd module. o explin electricl euivlent of P cell nd module o implement of the detils modeling nd simultion of P cell nd module on mtlb in gricl environment Simulin the integrted development environment (DE). o develop generl simulin model, cn bsed for ll otovoltic module vilble in mret, to obtin current voltge nd power voltge chrcteristics curves. o study effect of series resistnce R s loss resistnce, nd shunt resistnce R p, lege source of current in cell nd, module. o explore the fill fctor nd its effect on other prmeters of otovoltic module. o understnd the functioning otovoltic cell nd module, the modeling nd electricl circuits euivlent re necessry to develop the simultion models. Mthemticl modeling of otovoltic module is presented in the forthcoming section. he mthemticl eutions re employed to obtin the output current nd power of otovoltic module.. MHEMCL MODELN ND ELECRCL EQULEN OF PHOOOLC CELL ND MODULE n present section, different euivlent circuits nd mthemticl modeling of P module hs been presented. 99 JREM4548 DO :.8/ , JREM ll Rights Reserved.

2 del circuit model otovoltic cell he electricl circuit model of idel otovoltic cell is depicted in fig.. Fig. del Model of Photovoltic Cell he idel otovoltic cell model hs zero series resistnce nd shunt resistnce infinity. his euivlent circuit consist the oto current s current source nd nti prllel diode. he output lod current of idel otovoltic cell is obtined by using KCL nd is given in e. (). () d : Output lod current ( ) : Current nown s oto current nd it is due to solr d irrditions ( ) d : Diode current ( ) Diode current is obtined by diode eution nd given by e. (). d exp () : Lod oltge () : delity constnt fctor, which depends on the otovoltic cell technology nd different idelity fctor for different technology []. : nown s therml voltge. c () Electron chrge, 9.6 (C) Boltzmnn s constnt,.8 (J/K) Reverse sturtion current, () c: Operting temperture (K) K for Silicon cell herml oltge: c =6 m, t f is multiplied with N s nd, then... c.. (4) : modified idelity constnt fctor Circuit Model of otovoltic Cell with Series Resistnce R s n prcticl impliction, it is not possible to previl over the effect of the series resistnce R s tht is internl loss in cell nd prllel resistnce R p. Efficiency of otovoltic cell is ffected by series nd shunt resistnce. Circuit model of prcticl otovoltic cell with R s is depicted in fig Fig. Euivlent Circuit Model of Photovotic Cell with Rs f, R s into considertion, nd diode current is ffected, s given by e. (5), R exp s d N (5) s he otovoltic cell circuit model with Rs depicted in fig. is nown s simplified form nd widely used by the simultors. Prcticl Circuit Model with R s nd R p n fig., euivlent circuit model of otovoltic cell with series resistnce R S nd prllel resistnce R p is shown. t is widely used model of otovoltic cell. he output current is obtined by using the Kirchhoff s current lw, s given by e. (6). d p By substitution of e. (5) in e. (6) Fig. Circuit Model of Photovoltic Cell with Rs nd Rp Output current of otovoltic module bsed on Fig., is obtined by using e. (7). R s Rs. exp Rp t is one of the complex tss to obtin the solution of e. (7), it is trnscendentl eution. Double Diode Circuit Model n fig.4, double diode circuit model is depicted. his circuit model of otovoltic cell hs otocurrent prllel combintion of two diode, series resistnce nd shunt resistnce. d d n this cse lod output current, is given by e. (8) p (6) (7) JREM4548 DO :.8/ , JREM ll Rights Reserved.

3 . Rs. Rs exp exp..... Rs Rp (8). Fig.4 Double Diode Circuit Model DEERMNON OF PRMEERS he system prmeter of P module vries depending on the chosen model nd ssumption dopted by sercher. For instnces, in five prmeters model includes,, R s, R p, nd nd or four prmeters re,, R s, nd N. s. n present study, the four prmeters tht hve been evluted re, R s nd R p.. Determintion of Photo current n fig., the output current is determined by using Kirchhoff s current lw t SC (Solr rditions W / m nd 98 K ). he reltion of output current nd oto current is represented in e. (9)., exp (9) Now, on short circuit of fig. the e. (9) becomes. sc,, () his e. () is vlid only in cse of idel P cell, otherwise sc,, () he oto current is depends upon the solr irrdince nd temperture, nd its mthemticl reltion is represented in e. ()., i ( ) () : Solr irrditions ( W / m ) : W / m, sc, sc, d d is nown s short circuit current t SC () : Operting temperture of cell (K) p : Reference temperture (98 K) i : Coefficient of short circuit current (/K) B. Determintion of Sturtion Current he lst term of the reltionship (9) cn be eliminted by considering lrge shunt resistnce. Due to this reson, by using eution (9) t the three most significnt coordinte points of chrcteristics t stndrd test condition ( SC ); the open circuit voltge (, ), nd the short oc, circuit current (, sc, ), nd the voltge (, mp ), nd current ( mp, ) t mximum power ( P mp, ), the subseuent eution cn be expressed s: sc,. R s sc,,, exp () oc,, exp (4) pm, pm,. Rs pm,,, exp (5) f the exponentil prt of e. (5) is lrger thn -, in such point - cn be eliminted. ccording to e. () nd by substituting, in e. (5); oc, sc,, exp (6) oc,, sc, exp (7) Let is reverse sturtion current nd it is defined by E g. D e (8) D : Diode diffusion fctor E : Forbidden gp energy, (. e for Si ) g n processing of elimintion of the diode diffusion fctor D, e. (8) is computed twice, t c, c,. hen the rtio of two eutions is written in next expression:, E c g exp c,. c, c (9) oc, E c g sc, exp exp c,. c, c () E. () presents some prmeters re provided by the mnufcturer s ( oc, re f, c, ), other to relte the technology of P cell, s (, E g ) nd other some constnts. But nd c re dependents of ctul temperture. ht is why, hs to be determined t rel time. JREM4548 DO :.8/ , JREM ll Rights Reserved.

4 C. Determintion of Series Resistnce Rs nd Shunt Resistnce R p n order to me the proposed model more credible, R s nd R p re chosen so tht the simulted mx power P mp is eul to the experimentl one P mx, ex t SC conditions. P / P / m p, mp, mp, mp, ex mp, R p mp, m p,. Rs (),, exp mp, m p,. Rs mp, m p,. Rs oc, sc, sc, exp oc, Pmx, ex sc, exp () mp,. SMULON MODELS OF P MODULE. Simulin Model of ( ) Simulin Model of oto current e. () is developed in Simulin. he Detiled implementtion of in Simulin environment, with its subsystem nd effect of environmentl fctor solr irrditions nd temperture is depicted in Fig Constnt. Coeff. emp 98. sc Divide DOC ext D. Design Process of tertion () he experimentl vlue especilly, P mp is compred with P mp, to propose the vlues of the series resistnce R s nd Shunt resistnce R p. he design process of itertion to compute the pir of series resistnce nd shunt resistnce t P is depicted in Fig.5. mp,. nput:,, sc, oc, i, mp, mp, Rs= nd Rp by e. () :-: Solr rrditions Clculte by e. () nd by e. (9), Operting emperture, C Error>olernce No.6. () Yes Newton Rson solution of E. () Err.=Pmx- Pmx,ex End Fig. : tertion Flow Chrt (Beli et. l.) n subseuent section, the simultion models bsed on the electricl euivlent of the P module nd the eutions re developed. he simultion models re developed in Simulin, gricl user interfce environment in Mtlb. hese models rsed for the purpose of nlysis nd P chrcteristics of P module. Solr rrditions 5:5:65, Operting emperture, C (d) Fig.5 () Detiled Simulin Model Subsystem of (c) Effect of Solr rrdince on, Keeping Constnt (d) Effect of emperture on, with Solr rrditions constnt () JREM4548 DO :.8/ , JREM ll Rights Reserved.

5 System prmeters reuired to determine the oto current is ten from ble PWX 5 P Module (49 W) []. BLE. PWX 5 P MODULE (49 W) Prmeters Symbols lues Mximum Power P mp(w) 49 Mximum Current t P mp mp().88 Mximum oltge t P mp mp() 7 Short Circuit Module Current t SC Open Circuit oltge of Module t SC sc(). oc().8 Series Resistnce Rs (Ohm).55 - Noct C 45 Coeff. emp. of short circuit current i(/ K).*- - Kd ( K) -7.5*- B. Reverse Sturtion Current (, ) n Fig.7 reverse sturtion current, e. (7) is implemented using Simulin model. n this the simultion model lso computes the, s function of temperture. 6.6*-. 7 dd.8 oc.6*-9 oc*. sc, oc/ exp(oc/) Divide, Reverse Sturtion Current C. Sturtion Current ( ) E. (9) represents, nd sme is investigted by using the simultion model developed in Simulin environment. he simultion model is depicted in Fig. 8. he subprt of the Fig 8 (),, nd (c) represent the detiled, subsystem, ccount of temperture on Simulin models respectively..6*^-9..6*^- Eg. /98 /r Constnt6 7 dd 98 r (u())^ Fcn () Detiled Simulin Model of 5::65 Divide, Divide Divide Subsystem Simulin Model of Mth Function,, Reverse Sturtion Current, Subsystem,. Divide Reverse Sturtion Current 4.694e-9.896e-8.587e e-7.49e-6.49e-5, () Detiled Simulin Model,,, Reverse Sturtion Current Subsystem Representtion of, of P Module.694e-8 Fig. 8: Detiled Simulin Model mplementtion of D. Output Current of del P Module () Output current given by E. (7) is developed s simultion model depicted in Fig.9. he output current chrcteristics dependency on w.r.t voltge cn be investigted for nd using this Simulin model of idel P module. n present model R nd R is considered s zero, lossless P module is relized. s p 5::65 t, Reverse Sturtion Current,.8e e-8.e-7.75e-7.87e-7 Disply.8*^- -C- c.6*^-9 6. (+*Rs)/ exp(u) Reverse Sturtion Current,, Subtrct. (c) Effect of emperture on, Fig.7 Detiled Simulin Model mplementtion of Sturtion Current (, ) JREM4548 DO :.8/ , JREM ll Rights Reserved.

6 () Detiled Simulin Model of del P Module.55. Cloc Solr rrdions, W/m 5, C Output Current, () r t SC delp Module Pidel P(), del Module Cloc P() gr t SC, del P Module Cloc Scope Rs.88 mp, mp.*rs 7 mp, 6..8 oc, Mth (mp.*rs+mp,-oc)/ Function - in Mth Function. sc, sc, Disply Fig.9 del_p_module.mdl E. Output Current of Prcticl P Module (R s =.55 Ohm) he output current of P module t Rs=Ohm is determined using Simulin model, is depicted in fig...8*^-.6*^-9 c Solr nput 5 6. () Output Current, idel Output Current Reverse Sturtion Current rnsport Dely Detiled Simulin Model of 5 Subsystem mplementtion of Bsed on E. (7) Fig. Detiled Simultion mplementtion of using e. (7), Rs=.55 F. Computtion of shunt Resistnce R p Rs, (+*Rs)/ he shunt resistnce Rp is clculted using e. (), implementtion is presented in Fig.,. exp(u) (), Output Current t SC nd Rs=.55 Ohm Cloc 5 Subtrct P(), Output Powert SC nd Rs=.55 Ohm ()nd P() Ploting of P Module, Rs= c Fig. Clcultion shunt resistnce Rp 49 Pmp,ex 7 mp, E. Simulted Output Current of Prcticl P Module (nclusion of Series nd Shunt Resistnce) he e. (7) is implemented using simulin model depicted in Fig., to compute the output current of P module. he shunt resistnce of the P module is clculted by using e. () s proposed by (Beli, et. l)..8*^-.6*^-9 c Solr nput 6. Output Current, -C- -K- -C -C -C- -K- Reverse Sturtion Current Rs rnsport Dely Rp, (+*Rs)/,. () exp(u) (), Output Current t SC t pir of Rs nd Rp Cloc prcticl Current, () () Ploting of P Modulet pir of Rs nd Rp 4 Pprcticl Power, P() Divide Subtrct P(), Output Powert SC t pir of Rs nd Rp P() Ploting of P Modulet pir of Rs nd Rp Fig. mplementtion of Rs nd Rp to clculte Output Current of Module 4 JREM4548 DO :.8/ , JREM ll Rights Reserved.

7 nput P(Wtts) Output Results of simultion models of P module P re exemplify in forthcoming section. n this section the simultion result of different electricl euivlent models of P module is described nd compred with the dt given by mnufcturer relted to the P chrcteristics. F. U Model he gricl user interfce model of output current of P cell is depicted in Fig. he simultion output of the Prcticl_P_Mod_Series_Res.mdl is current nd power chrcteristics. hese chrcteristics re developed by using e. (7), the non liner behvior between current nd voltge, nd power versus voltge re depicted in Fig.5 Fig. ricl User nterfce Simultion Model of Photovoltic Module. RESULS OF SMULNK MODELS OF P MODULE n preceding section different simulin models of P module hve designed nd in present section their simultion result is represented.. Chrcteriztion of del Photovoltic Module On running of del_p_module.mdl Fig 9, the simulted - nd P- curves of idel otovoltic module re shown in Fig. 4 Fig.5 () Plotting of Prcticl P Module, Simultion t is remrble fct, tht both of the chrcteristics - nd P- of otovoltic module re nonliner. s indicted in preceding discussion, itertion pproch is used to get mximum power point, depicted in Fig. 5 B. Effect of Solr rrditions he output power nd voltge develop non liner reltions nd the effect on the curve between nd P clerly depicted in Fig. 6 P- Chrcteristics of Simplifed EE Model of P Module t Different 5 4 () (olt) () 4 Fig.4 Current Chrcteristics del P Module B. Chrcteriztions of Prcticl P Module ime Fig.6 - nd P- Chrcteristics of P Module Under Solr rrdinces rition 5 JREM4548 DO :.8/ , JREM ll Rights Reserved.

8 Power (W) P () () Output Current () C. Effect of operting temperture he output power nd voltge develop non liner reltions nd the effect on the curve of operting temperture is depicted in Fig. 7 4 Effect of on () of P Module he simulted result, for idel P module, Pmp is lrger thn given vlue, nd t Rs (.55), the result is lmost sme. 4 () Chrcteristics of P Module in Rs Rs=. Ohm Rs=. Ohm Rs=. Ohm Rs=. Ohm Rs=.44 Ohm Rs=.55 Ohm Fig.7 () Simulted - nd P- of Electricl Euivlent Simplified Circuit Model of P Model () of P Module Under nfluence of emperture P- chrcteriztion of P Module Bsed on emperture BLE. PRMERES OF P MODULE =5 :5:55 O C D. Effect of Rs on Chrcteristics of Module t SC t is obvious from gricl representtion of P () depicted in Fig.8 in ccount of Rs; Pmp decrese with increse in Rs, Moreover oc lso decrese with increse in Rs series resistnce of otovoltic module Fig v(volt) Effect of on P() of P Module (olt) in C Pmp (W) mp () mp () sc () oc () FF=Pmp/ scoc Effect of Rs on P() Chrcteristics of P Module Rs=. Ohm Rs=. Ohm Rs=. Ohm Rs=. Ohm Rs=.44 Ohm Rs=.55 Ohm 5 5 5, oltge cross Lod, () : P- Chrcteriztion of P Module with Rs rition t SC , oltge() Fig.9 : () of P Module with Rs Noticeble fct from the gricl representtion of () in ccount of series resistnce Rs is depicted in Fig. 9, nd short circuit current, sc is lest effected by rise in series resistnce.. CONCLUSON he observtion of the ble, simultion output Pmp(W), mp(), mp(), sc(), nd oc() of the electricl euivlent simplified P module nd PWX 5 (49 W) P Module lmost mtched. BLE. PRMERES OF DEL P MODULE SC, SMULON MODEL(RS=.55 ND RP= OHM), ND PWX 5 SC Prmeters (Unit) mp() mp() sc()... oc()..6.8 he output power continuously decreses with decrese in solr irrdinces. he effect of on prmeters of otovoltic modules from the simultion results, shown in ble-4; it is te in from the ble-4, Pmp(W), mp(), nd sc() gretly ffected prmeters of P module due nd ll these prmeters increse with increse in. mp() nd oc() re lest ffected prmeters. BLE. (W/m ) Simultion lues del P SYSEM PRMEERS UNDER EFFEC OF SOLR RRDONS OF P MODULE P mp(w) mp() mp( ) Simultion lues(rs=.55) PWX 5 t SC of P Module Pmp(W) sc() oc() FF=P mp/ sc oc Most considerble environmentl fctor is temperture which effect the opertion of otovoltic module, effect of temperture is concluded by using the simultion models; shown in ble 4 6 JREM4548 DO :.8/ , JREM ll Rights Reserved.

9 6 4 Simultion lues del P Module Simultion lues(rs=.55) Fig. : Comprision of System Prmeters between Simultion Output nd Mnufctorer Listing he fill fctor continuously decreses with increse in temperture. he gricl representtion of system prmeters by ting in ccount of temperture is depicted in Fig. 4 nd Fig Pmp(W) mp() mp() Pmp(W) mp() mp() sc() oc() 5 5 Fig.4 : System Prmeters (emp. Conseuence) Fig. System Prmeters (Solr rrditions, ) [yxis=syste Prmeters, x-xis=solr rrditions] Fill Fctor: Fill fctor of P module is defined in e. () Pmp c FF () sc oc sc oc FF. sc. oc (). c he vrition of fill fctor due to solr irrditions is depicted in ble 4 nd Fig.. Moreover, chnging in fill fctor due to temperture is illustrted in Fig Fig Fill Fctor (FF) s. Solr rrditions, Fill Fctor : rition of Fill Fctor due to Solr rrditions Fill Fctor s. emperture, ( C) Fill Fctor Fig.5 sc() : System Prmeters (emp. Conseuence) n nutshell, decreses in fill fctor result output downsize the efficiency of P module s per e. (). he fill fctor depends on the shunt resistnce nd series resistnce. Eventully, growth in shunt resistnce nd series resistnce is cuse of decline in the fill fctor. REFERENCES oc() [] M.. illlv et. l, Comprehensive pproch to Modeling nd Simultion of Photovoltic rrys, EEE rnsctions on Power Electronics, ol. 4, No. 5, My 9 [] H. J. Moller, Semiconductors for Solr Cells. Norwood, M: rtech House, 99. [] Beli, et.l., detiled modeling of Photovoltic model using Mtlb, NR Journl of stronomy nd eoysics, pp 5-6, 4. [4] J.. Rmos,. Zmor, J.J. Cmpyo. Modeling of Photovoltic Module, nterntionl Conference on Renewble Energies nd Power Qulity (CREPQ ) rnd, Spin, -5 Mrch. Fig. rition of Fill Fctor due to emperture ( C) 7 JREM4548 DO :.8/ , JREM ll Rights Reserved.