Extended InGaAs Photodiodes IG26-Series
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1 Description The IG26series is pnchromtic PIN photodiode with nominl wvelength cutoff t 2.6 µm. This series hs been designed for demnding spectroscopic nd rdiometric pplictions. It offers excellent shunt resistnce in combintion with superior responsivity over wide rnge. Fetures 50 % cutoff wvelength > 2.45 µm Typicl pek responsivity:.45 A/W Excellent temperture stbility Reduced edge effect Applictions Spectrophotometer Diode lser monitoring Noncontct temperture mesurement Flme control Moisture monitoring Versions Uncooled TOcn, chip only, digitl module Cooled TE, TE2, TE3 Lser Components, Inc.
2 Opticl Chrcteristics, 25 C c Prt Number 50% Cut off Wvelength Pek Wvelength Pek Responsivity,b 520 nm,b,d 600 nm,b 900 nm,b Typ. Min. Typ. Min. Typ. Min. Typ. Min. Typ. S4i 250 IG26X500S4i 500 S4i 000 IG26X300S4i 300 > / TBD Gi 2000 Gi 3000 Prmeter tested on btch level t T =25 C. b Responsivity mesured t 0 V Bis. c Dt re prior to window integrtion. d Preliminry dt ElectroOpticl Chrcteristics, 25 C Prt Number Shunt = 0 mv b [kohm] Drk = 0.25 V b [µa] Pek D* f= khz [cm Hz ½ /W] Pek NEP f= khz [W/Hz ½ ] Min. Typ. Typ. Mx. Min. Typ. Mx. Typ. S4i E+0.2 E+ 6.0 E3 4.2 E3 IG26X500S4i E+0.2 E+.0 E2 6.0 E3 S4i E+0.0 E+.8 E2.0 E2 IG26X300S4i E E E2.5 E2 Gi E E E2 2.4 E2 Gi E E E2 3.6 E2 Prmeter tested on btch level b Prmeter 00% tested 2 Lser Components, Inc.
3 Electricl Chrcteristics, 25 C Prt Number = 0 V [pf] Forwrd Voltge [V] Typ. Typ. S4i IG26X500S4i S4i IG26X300S4i Gi Gi Prmeter tested on btch level Thermoelectriclly Cooled InGAs Detectors Prt Number Operting Temperture [ C] Shunt = 0 mv b [kohm] Pek D* [cm Hz ½ /W] Pek NEP [W/Hz ½ ] = 0 V [pf] Min. Typ. Typ. Typ. Typ. T E+.2 E3 35 T E+ 2.4 E3 580 IG26X300T E+ 4.3 E3 040 T E+ 5.0 E3 925 T E+ 9.6 E T E+ 5.6 E4 35 T E+.2 E3 580 IG26X300T E+ 2.0 E3 040 T E+ 2.5 E3 920 T E+ 5. E Prmeter tested on btch level b Prmeter 00% tested 3 Lser Components, Inc.
4 Absolute Mximum Rtings Min. Mx. Storge Temperture [ C] Operting Temperture [ C] Reverse Bis, cw [V] Forwrd Current, cw [ma] Soldering Temperture, 5 sec. [ C] 260 ESD Dmge Threshold, Humn Body Model Clss 0*, [V] 0 <250 TE Cooler Voltge [V] T7 T TE Cooler Current [A] T7 T9.9.2 *ANSI/ ESD STN Lser Components, Inc.
5 Fig. : Spectrl Response Spectrl Response Zoom 2 Typicl, T = 25 C,6 Typicl,75,4,5,2 Responsivity (A/W),25 0,75 0,5 Responsivity (A/W) 0,8 0,6 0,4 0,25 25C 20C 40C 65C Wvelength (nm) 65 C 0,2 25 C 0 40 C 20 C Wvelength (nm) Fig. 2: Drk Current vs. Reverse Voltge Fig. 3: Shunt Resistnce vs. Temperture,00E03 Typicl, T = 25 C,00E+04 Typicl, Vr = 0 mv Drk Current (A),00E04 IG26X300,00E05,00E06,00E07,00E08 0 0,05 0, 0,5 0,2 0,25 0,3 Reverse Voltge (V) Shunt (kω),00e+03,00e+02,00e+0,00e+00,00e0,00e Temperture ( C) IG26X300 Fig. 4: Detectivity vs. Shunt x Are Fig. 5: Cpcitnce vs. Reverse Voltge 0 Typicl, T = 25 C,00E+04 Typicl Detectivity D* x 0 0 (cm Hz /2 / W) Cpcitnce (pf),00e+03,00e+02,00e+0 IG26X Ro Are (cm² Ω),00E Reverse Voltge (V) 5 Lser Components, Inc.
6 Fig. 6: Responsivity Temperture Coefficient I Fig. 7: Responsivity Temperture Coefficient II 0,05 Typicl 0,95 Typicl 0,03 0,75 % Chnge / C 0,0 0,0 0,03 25 C to 65 C 40 C to 25 C % Chnge / C 0,55 0,35 0,5 25 C to 65 C 40 C to 25 C 0, Wvelength (nm) 0, Wvelength (nm) Fig. 8: Smple Pulse Response Fig. 9: Linerity,2 05 Typicl, Wvelength = 30 nm Normlized Response (.u.) 0,8 0,6 0,4 0,2 Typicl, λ Test =30nm, Frequency = 00kHz RL = 50Ω, Bis = 0V Reltive Sensitivity (%) Time (μs) Incident Light Level (mw) 6 Lser Components, Inc.
7 Nomenclture C I G 2 6 X S 4 i Type Pckge Style Chip only Extended InGAs PIN Photodiode 250 = 250 µm 500 = 500 µm S4i TO46, isolted S4ix TO46, no window 000 = mm Gi TO39, isolted 300 =.3 mm Gix TO39, no window 2000 = 2 mm T7 TO37, single stge TEC 3000 = 3 mm T9 TO66, dul stge TEC M2 2 pd PCB SMD L5 TO46 lens cp Stndrd window: Borosilicte glss Pckge drwings, TEC nd thermistor curves cn be found on seprte dtsheet. Product Chnges LASER COMPONENTS reserves the right to mke chnges to the product(s) or informtion contined herein without notice. No libility is ssumed s result of their use or ppliction. Ordering Informtion 707/6 / V5 / HW / lcdgi/ig26series Products cn be ordered directly from LASER COMPONENTS or its representtives. For complete listing of representtives, visit our website t Lser Components, Inc.
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N-Channel 2 V (D-S) 175 C MOSFET SUG99E TO-27 S D Top View G PRODUCT SUMMRY V DS (V) 2 R DS(on) max. (Ω) at V GS = V.95 R DS(on) max. (Ω) at V GS = 7.5 V. Q g typ. (nc) 86 I D () d Configuration Single
N-Channel 40-V (D-S) MOSFET
N-Channel 4-V (D-S) MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () a, c Q g (Typ.) 4.2 at V GS = V.24 at V GS = 4.5 V 24 nc T O-263 FETURES TrenchFET Power MOSFET % R g and UIS Tested PPLICTIONS Synchronous
L9307 L9309 DUAL HIGH CURRENT LOW SIDE DRIVER
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P-Channel 60 V (D-S) 175 C MOSFET
P-Channel 6 V (D-S) 75 C MOSFET SUMP6-7L PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () d -6.69 at V GS = - V.88 at V GS = -4.5 V - S TO-263 FETURES TrenchFET power MOSFET Package with low thermal resistance
N-Channel 150-V (D-S) 175 C MOSFET
N-Channel 5-V (D-S) 75 C MOSFET SUM4N5-38 PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D ().38 at V GS = V 4 5.42 at V GS = 6 V 38 FETURES TrenchFET Power MOSFETs 75 C Junction Temperature New Low Thermal Resistance
High Voltage, Input Rectifier Diode, 10 A
VS-ETS...PbF Series, VS-ETS...M3 Series High Voltage, Input Rectifier Diode, Base cathode 3 3 TO-C Cathode node PRODUCT SUMMRY Package TO-C I F(V) V R 8 V to V V F at I F. V I FSM 6 T J max. 5 C Diode
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package
Bidirectional Symmetrical (BiSy) Single Line ESD-Protection Diode in Silicon Package 22543 22544 MRKING (example only) 1.3 XY 1 = year code Open circle = month code and pin 1 XY = type code DESIGN SUPPORT
V DC 4 POLE RELAY RC V DC 4 POLE RELAY (RC) V AC 4 POLE RELAY
DT SHEET Plug-in power relays Order code Manufacturer code Description -.. V DC POLE RELY RC -.. V DC POLE RELY (RC) -.. V C POLE RELY Plug-in power relays The enclosed information is believed to be correct,
QM75DY-H HIGH POWER SWITCHING USE
QMDY-H QMDY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, UPS, motor
INTEGRATED CIRCUITS. 74LVC V Parallel printer interface transceiver/buffer. Product specification 1995 Nov 10 IC24 Low Voltage Handbook
INTEGRTED CIRCUITS 3.3V Parallel printer interface traceiver/buffer 1995 Nov 10 IC4 Low Voltage Handbook FETURES synchronous operation 4-Bit traceivers 3 additional buffer/driver lines TTL compatible inputs
QM100HY-H HIGH POWER SWITCHING USE
QMHY-H QMHY-H IC Collector current... CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor controllers,
Power rating at 80 C watts R0005 ohms R0006 to R01. R001 to R01 Power. to R015. (mω) 1 0.2, 0.25, 0.3, 0.
Resistors Metl Strip Current Sense Resistors Surfce Mount Resistors Metl Element Current Metl Element Sense Resistor UR Series UR Current Series Sense Resistor Resistnce R000 (m ) to R0 (m ) Metl UR Robust
Thyristor High Voltage, Phase Control SCR, 25 A
Thyristor High Voltage, Phase Control SCR, 25 TO-220B 2 3 2 () (K) (G) 3 FETURES Easy control peak current at charger power up to reduce passive / electromechanical components Meets JESD 20 class whisker
Low-Power, Precision SINGLE-SUPPLY OPERATIONAL AMPLIFIERS
OP234 OP234 OP2234 OP4234 OP234 OP2234 OP4234 SBOSB MY 1996 REVISED PRIL 28 Low-Power, Precision SINGLE-SUPPLY OPERTIONL MPLIFIERS FETURES OP234 WIDE SUPPLY RNGE: Single Supply: V S = +2.7V to +36V Dual
Power MOSFET FEATURES APPLICATIONS. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a
Power MOSFET PRODUCT SUMMRY V DS (V) 600 R DS(on) () V GS = 0 V 0.75 Q g max. (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single D D 2 PK (TO-263) G FETURES Low gate charge Q g results in simple drive
Power MOSFET FEATURES. IRFS9N60APbF IRFS9N60ATRRPbF a IRFS9N60ATRLPbF a SiHFS9N60A-E3 SiHFS9N60ATR-E3 a SiHFS9N60ATL-E3 a
Power MOSFET PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = 0 V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PK (TO-263) D S Note a. See device orientation. G N-Channel
MSR1560G, MSRF1560G SOFT RECOVERY POWER RECTIFIER 15 AMPERES, 600 VOLTS
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N-Channel 20-V (D-S) 175 C MOSFET
N-Channel 2-V (D-S) 75 C MOSFET SUM6N2-3m9P PRODUCT SUMMRY V (BR)DSS (V) r DS(on) (Ω) I D () a.39 at V GS = V 6 2.52 at V GS = 4.5 V 6 FETURES TrenchFET Power MOSFET 75 C Junction Temperature % R g Tested
QM150DY-2HK HIGH POWER SWITCHING USE
QM1DY-HK QM1DY-HK IC Collector current... 1 CEX Collector-emitter voltage... hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81 PPLICTION Inverters, Servo drives, motor
P-CUBE-Series High Sensitivity PIN Detector Modules
High Sensitivity PIN Detector Modules Description The P-CUBE-series manufactured by LASER COMPONENTS has been designed for customers interested in experimenting with low noise silicon or InGaAs pin detectors.
UVEPROM SMJ27C K UVEPROM UV Erasable Programmable Read-Only Memory. PIN ASSIGNMENT (Top View) AVAILABLE AS MILITARY SPECIFICATIONS
512K UVEPROM UV Erasable Programmable Read-Only Memory VILBLE S MILITRY SPECIFICTIONS SMD 5962-87648 MIL-STD-883 FETURES Organized 65,536 x 8 High-reliability MIL-PRF-38535 processing Single +5V ±10% power
First Sensor Evaluation Board Data Sheet Part Description MOD Order #
FOTO Input + 5 DC voltage Optical input (optional C-mount for lens) Mechanical potentiometer for APD-bias setting Output 16 channels voltage signal of amplified APD (300 MHz bandwidth and additional gain
[MILLIMETERS] INCHES DIMENSIONS ARE IN:
![[MILLIMETERS] INCHES DIMENSIONS ARE IN:](/thumbs/85/92900936.jpg "[MILLIMETERS] INCHES DIMENSIONS ARE IN:")
Features: Wide acceptance angle, 00 Fast response time Linear response vs Irradiance Plastic leadless chip carrier (PLCC-) Low Capacitance Top Sensing Area Tape and reel packaging Moisture Sensitivity
Power MOSFET FEATURES. Motor Drive. IRFPS40N60KPbF SiHFPS40N60K-E3 IRFPS40N60K SiHFPS40N60K T C = 25 C
Power MOSFET PRODUCT SUMMRY (V) 600 R DS(on) ( ) V GS = V 0. Q g (Max.) (nc) 330 Q gs (nc) 84 Q gd (nc) 50 Configuration Single D FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved
QM100DY-2HBK HIGH POWER SWITCHING USE
BX B1X MITSUBISHI TRNSISTOR MODULES QM1DY-HBK QM1DY-HBK IC Collector current... 1 CEX Collector-emitter voltage... 1 hfe current gain... Insulated Type UL Recognized Yellow Card No. E86 (N) File No. E81