AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE
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1 NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure Prepared by: Bertrand Renaud On Semiconductor SIMULATION NOTE Overview The NCP1521B step down PWM DC DC converter is optimized for portable applications powered from one cell Li ion or three cell Alkaline/NiCd/NiMH batteries. The part is available in adjustable output voltage versions ranging from 0.9 V to 3.3 V. It uses synchronous rectification to increase efficiency and reduce external part count. The device also has a built in 1.5 MHz (nominal) oscillator which reduces component size by allowing smaller inductors and capacitors. Automatic switching PWM/PFM mode offers improved system efficiency. Additional features include integrated soft start, cycle by cycle current limiting and thermal shutdown protection. The NCP1521B is available in space saving, low profile TSOP5 and UDFN6 packages. Model Package NCP1521B model has been developed on ORCAD Capture & Pspice It includes NCP1521B typical application schematic (NCP1521B.DSN), NCP1521B simulation library (NCP1521B.LIB) and NCP1521B package (NCP1521B.OLB). VIN CIN OFF ON VIN GND EN LX 5 FB 4 L COUT R1 VOUT Cff OFF ON EN FB 6 GND LX 5 VIN GND 4 R2 2.2 H R1 18 pf VOUT 10 F Figure 1. Typical Application TSOP 5 R2 VIN 4.7 F Figure 2. Typical Application UDFN6 Semiconductor Components Industries, LLC, 2007 March, 2007 Rev. 0 1 Publication Order Number:
2 Model Installation This procedure describes one method to correctly simulate this model. 1. Run ORCAD Capture and start a new blank project development. 2. Delete the current blank design 2
3 3. Import NCP1521.DSN schematic 4. Import NCP1521B.OLB package too 3
4 5. Your hierarchical project looks like the following pictures 4
5 6. To simulate the device, a new time domain simulation must be created: 5
6 7. NCP1521B.LIB simulation library file must be added to the current design. 6
7 8. NCP1521B typical application circuit can be now simulated. Input Voltage Enable Signal Output Voltage Additional Information NCP1521B model is only a behavioral model which cannot fully reproduce NCP1521B device electrical characteristics. For further information on NCP1521B, visit our website. 7
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MMUN2111LT1 Series. Bias Resistor Transistors. PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
MMUNLT Series Preferred Devices Bias Resistor Transistors PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
NLAS5157. Ultra-Low 0.4 SPDT Analog Switch
Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15
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Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
AND9043/D. An Off-Line, Power Factor Corrected, Buck-Boost Converter for Low Power LED Applications APPLICATION NOTE.
An Off-Line, Power Factor Corrected, Buck-Boost Converter for Low Power LED Applications Prepared by: Frank Cathell ON Semiconductor Introduction This application note introduces a universal input, off
MBRS320T3, MBRS330T3, MBRS340T3. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40 VOLTS
MBRS320T3, MBRS330T3, MBRS340T3 Preferred Devices Surface Mount Schottky Power Rectifier... employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry
NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package
NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small
P3P85R01A. 3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device
3.3V, 75 MHz to 200 MHz LVCMOS TIMING SAFE Peak EMI Reduction Device Functional Description P3P85R0A is a versatile, 3.3 V, LVCMOS, wide frequency range, TIMING SAFE Peak EMI reduction device. TIMING SAFE
MBRS360T3, MBRS360BT3G. Surface Mount Schottky Power Rectifier SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES, 60 VOLTS
Surface Mount Schottky Power Rectifier This device employs the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction with oxide
10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142
... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)
NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723
NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device
NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection
Schottky Diode Array for Four Data Line ESD Protection The NUP432MR6 is designed to protect high speed data line interface from ESD, EFT and lighting. Features Very Low Forward Voltage Drop Fast Switching
S1AFL - S1MFL. Surface General-Purpose Rectifier
SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free
NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL
NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level
MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS
MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single
MPSA44. High Voltage Transistor. NPN Silicon. Pb Free Packages are Available* Features. MAXIMUM RATINGS MARKING DIAGRAM
Preferred Device High Voltage Transistor NPN Silicon Features PbFree Packages are Available* MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage V CEO Vdc Collector Base Voltage V CBO 5