EVALUATION BOARD FOR STK N, 120N, 140N. Phenol 1-layer Board) Figure 2. STK NGEVB Figure 3. STK NGEVB Figure 4.

Size: px
Start display at page:

Download "EVALUATION BOARD FOR STK N, 120N, 140N. Phenol 1-layer Board) Figure 2. STK NGEVB Figure 3. STK NGEVB Figure 4."

Transcription

1 STK44-NGEVB, STK44-1NGEVB, STK44-14NGEVB STK44-N Series Evaluation Board User's Manual EVAL BOARD USER S MANUAL Thick-Film Hybrid IC for use used in from 6 W to 18 W 1ch class AB audio power amplifiers. This Evaluation Board User s Manual describes the set-up and use of the STK44 N Series Evaluation Board for SANYO Semiconductor (An ON Semiconductor Company). Thick-Film Hybrid IC for use in from 6 W to 18 W 1ch class AB audio power amplifiers devices STK44-N-E, STK44-1N-E and STK44-14N-E. For data sheets and additional on these devices, please visit the ON Semiconductor website at Figure 1. STK44 N Series Evaluation Board EVALUATION BOARD FOR STK44 N, 1N, 14N ( mm mm 1.6 mm, Phenol 1-layer Board) ( mm mm 1.6 mm, Phenol 1-layer Board) ( mm mm 1.6 mm, Phenol 1-layer Board) Figure. STK44 NGEVB Figure. STK44 1NGEVB Figure 4. STK44 14NGEVB Table 1. SELECTION GUIDE STK44 N E STK44 1N E STK44 14N E Output1 (%/1 khz) 6 W 1ch 1 W 1ch 18 W 1ch Output (1%/ Hz to khz) 4 W 1ch 8 W 1ch 1 W 1ch Maximum Rating V CC max (no sig.) 46 V 6 V 8 V Maximum Rating V CC (6 ) 9 V 9 V V Recommended Operating V CC (6 ) V 41 V 1 V Package Size (mm) (mm) (mm) Semiconductor Components Industries, LLC, 1 June, 1 Rev. 1 Publication Order Number: EVBUM19/D

2 Constant-voltage Supply Output Load (RL = 6 ) CH1 Signal GND OSC Output (6 ) CH1 Figure. Characteristics Confirmation V CC, F Specified Transformer Power Supply STK44-N-E (Equivalent to MG-) STK44-1N-E/14N-E (Equivalent to MG-) V CC, F Constant-voltage Supply Speaker (CH1) Signal GND Music Source (CH1) Figure 6. Sound Quality Configuration, Load Short-circuit Test, Noise Examination

3 STK44 NSR PCB PARTS LIST Table. PCB NAME: STK44 SR GEVB A Type (IC1) STK44 N E STK44 1N E STK44 14N E Position of (1)pin Third from the Right End Second from the Right End The Right End Location R1 1k R 6 k R 1.8 k R4 /1 W R 6 k R6 k /1 W 4. k /1 W.1 k /1 W R k /1 W 4. k /1 W.1 k /1 W R8. / W R9. / W R 4. /1 W R11 4. /1 W C1 4 pf C. F/ V C F/ V C4 F/ V C pf C6 F/ V C 4 F/ V C8 F/ V C9 F/ V C.1 F D1 V/. A Short Short L1. H J1 1 mm J mm

4 TEST CIRCUITS STK44 N E R1 C1 C R R C C4 R4 C6 C R D1 R6 R C C8 C9 L1 R8 R C R11 1V V CC V CC R L Figure. STK44 N E Test Circuit STK44 1N E R1 C1 C R R C C4 R4 C6 C R R6 R C C8 C9 L1 R8 R C R11 R9 1V VCC VCC RL Figure 8. STK44 1N E Test Circuit STK44 14N E R1 C1 C R R C C4 R4 C6 C R R6 R C C8 C9 L1 R8 R C R11 R9 1V VCC VCC RL Figure 9. STK44 14N E Test Circuit 4

5 SUBSTRATE SPECIFICATIONS (Substrate Recommended for Operation of STK44-N/1N/14N) Size: mm mm 1.6 mm, Phenol 1-layer Board Material: Phenol Copper Side ( ) PCB LAY EXAMPLE Figure. Top View Figure 11. Top View

6 CHARACTERISTIC OF EVALUATION BOARD STK44 N E Total Harmonic Distortion THD (%) V CC = V f = khz Total Device Power Dissipation, Pd (W) 6 4 V CC = V Figure 1. THD vs. Po.1 1 Figure 1. Pd vs. Po THD = % () Supply Voltage, V CC ( V) THD =.4% () V CC = V THD = % THD =.4% Frequency, f (Hz) Figure 14. Po vs. V CC Figure 1. Po vs. f 6

7 CHARACTERISTIC OF EVALUATION BOARD STK44 1N E Total Harmonic Distortion THD (%) V CC = 41 V f = khz Total Device Power Dissipation, Pd (W) V CC = 41 V Figure 16. THD vs. Po Figure 1. Pd vs. Po THD = % THD =.4% V CC = 41 V THD = % THD = 1% 4 6 Supply Voltage, V CC ( V) Frequency, f (Hz) Figure 18. Po vs. V CC Figure 19. Po vs. f

8 CHARACTERISTIC OF EVALUATION BOARD STK44 14N E Total Harmonic Distortion THD (%) V CC = 1 V f = khz Total Device Power Dissipation, Pd (W) V CC = 1 V Figure. THD vs. Po Figure 1. Pd vs. Po 4 THD = % Supply Voltage, V CC ( V) THD =.4% 6 V CC = 1 V THD = % THD = 1% Frequency, f (Hz) Figure. Po vs. V CC Figure. Po vs. f 8

9 STAND BY CONTROL & MUTE CONTROL APPLICATION STK44 N E STK44 1N E STK44 14N E.k Mute Control H:Signal Mute L:Normal tdr 1s tdf ms 1V VCC VCC SB1 SB V V Mute V ST BYMUTE PLAY MUTEST BY SB1 SB Stand by Control H:Operation Mode L:Stand by Mode 1V VCC 6.8k Vz=1V 1V Regulator Figure 4. STK44 Ese Stand-by Control & Mute Control Application THERMAL SHUT DOWN APPLICATION STK44 N E No Thermal Sensor Thermal Sensor STK44 1N E Shutdown Signal V Thermal Sensor STK44 14N E Shutdown Signal V Figure. STK44 Esr Thermal Shut Down Application 9

10 THERMAL SENSOR CHARACTERISTIC STK44 1N E STK44 14N E k Reference k Reference k k Resistance, R p ( ) Resistance, R p ( ) 1k Max. 1k Max. Typ. Typ. Min. Min Temperature, T p ( C) Figure 6. R p vs. T p Temperature, T p ( C) Figure. R p vs. T p

11 ROAD-SHORT & DC VOLTAGE PROTECTION APPLICATION amp. 1 NF SUB V O Road Short Protection. 6.8k 6k 6k k V 4 F 8k k F k 1k to SB1 to SB H:Operation Mode L:Protection Mode V CC DC Voltage Protection Figure 8. STK44 N E Road-short & DC Voltage Protection Application amp. 1 NF SUB VE 11 VE 1 Road Short Protection. 6.8k 6k 6k k V 4 F 8k k F k 1k to SB1 to SB H:Operation Mode L:Protection Mode V CC DC Voltage Protection Figure 9. STK44 1N E Road-short & DC Voltage Protection Application 11

12 amp. 1 NF SUB VE 11 1 VE 1 Road Short Protection. 6.8k 6k 6k k V 4 F 8k k F k 1k to SB1 to SB H:Operation Mode L:Protection Mode V CC DC Voltage Protection Figure. STK44 14N E Road-short & DC Voltage Protection Application ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERG FORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 16, Denver, Colorado 81 USA Phone: 6 1 or Toll Free USA/Canada Fax: 6 16 or Toll Free USA/Canada orderlit@onsemi.com N. American Technical Support: Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative EVBUM19/D

AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE

AND8285/D. NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure SIMULATION NOTE NCP1521B Adjustable Output Voltage Step Down Converter Simulation Procedure Prepared by: Bertrand Renaud On Semiconductor SIMULATION NOTE Overview The NCP1521B step down PWM DC DC converter is optimized

More information

Parameter Symbol Conditions Ratings Unit

Parameter Symbol Conditions Ratings Unit Ordering number : ENN8386 Monolithic Linear IC Downconverter IC for Digital CATV http://onsemi.com Overview The is a downconverter IC for digital CATV. It accepts RF input frequencies from 50 to 150MHz

More information

Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system.

Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning system. Ordering number : ENA2052 LA1225MC Monolithic Linear IC FM IF Detector IC http://onsemi.com Overview The LA1225MC is a Low-voltage operation (1.8V or higher) FM IF detector IC for the electronic tuning

More information

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias

More information

Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features

Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international

More information

LA4631/D. Functions 2-channel power amplifier for audio applications. Specifications

LA4631/D. Functions 2-channel power amplifier for audio applications. Specifications Ordering number : EN8B LA Monolithic Linear IC For Audio Applications W -Channel AF Power Amplifier Overview The LA (W channels) is a single-ended power amplifier that has a pin arrangement similar to

More information

SMA3109. MMIC Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6. Features. Specifications. Low current. : ICC=16mA typ. Absolute Maximum Ratings at Ta=25 C

SMA3109. MMIC Amplifier, 3V, 16mA, 0.1 to 3.6GHz, MCPH6. Features. Specifications. Low current. : ICC=16mA typ. Absolute Maximum Ratings at Ta=25 C Ordering number : ENA1749 SMA319 MMIC Amplifier, 3V, 16mA,.1 to 3.6GHz, MCPH6 http://onsemi.com Features High Gain Wideband response Low current High output power Port impedance : Gp=23 typ. @1GHz : fu=3.6ghz

More information

AND8450/D. NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE

AND8450/D. NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE Introduction The NCV7680 is an automotive LED driver targeted primarily for rear combination lamp systems. A high input voltage to this

More information

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS. THERMAL CHARACTERISTICS

MPSL51. Amplifier Transistor PNP Silicon MAXIMUM RATINGS.  THERMAL CHARACTERISTICS Amplifier Transistor PNP Silicon MAXIMUM RATINGS Rating Symbol alue Unit Collector Emitter oltage CEO dc Collector Base oltage CBO dc Emitter Base oltage EBO 4. dc Collector Current Continuous I C 6 madc

More information

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W

2N6667, 2N6668. Darlington Silicon Power Transistors PNP SILICON DARLINGTON POWER TRANSISTORS 10 A, V, 65 W Darlington Silicon Power Transistors Designed for general purpose amplifier and low speed switching applications. High DC Current Gain h FE = 500 (Typ) @ I C =.0 Adc Collector Emitter Sustaining Voltage

More information

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

PCS2I2309NZ. 3.3 V 1:9 Clock Buffer . V 1:9 Clock Buffer Functional Description PCS2I209NZ is a low cost high speed buffer designed to accept one clock input and distribute up to nine clocks in mobile PC systems and desktop PC systems. The

More information

Overview The LA5744MP is a separately-excited step-down switching regulator (variable type).

Overview The LA5744MP is a separately-excited step-down switching regulator (variable type). Ordering number : ENA0587A Monolithic Linear IC Separately-Excited Step-Down Switching Regulator (Variable Type) http://onsemi.com Overview The is a separately-excited step-down switching regulator (variable

More information

SMA3107. MMIC Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6. Features. Specifications

SMA3107. MMIC Amplifier, 3V, 6mA, 0.1 to 2.8GHz, MCPH6. Features. Specifications Ordering number : ENA1753A SMA317 MMIC Amplifier, 3V, 6mA,.1 to 2.8GHz, MCPH6 http://onsemi.com Features High Gain : Gp=23.5 typ. @1GHz Wideband response : fu=2.8ghz Low current : ICC=6mA typ. Port impedance

More information

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch

NLAS5157. Ultra-Low 0.4 SPDT Analog Switch Ultra-Low.4 SPDT Analog Switch The NLAS5157 is Single Pole Double Throw (SPDT) switch designed for audio systems in portable applications. The NLAS5157 features Ultra Low R ON of.4 typical at = V and.15

More information

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRA320T3G Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal to silicon power diode. State of the art geometry features epitaxial construction

More information

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

More information

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network

MUN5216DW1, NSBC143TDXV6. Dual NPN Bias Resistor Transistors R1 = 4.7 k, R2 = k. NPN Transistors with Monolithic Bias Resistor Network MUN526DW, NSBC43TDXV6 Dual NPN Bias Resistor Transistors R = 4.7 k, R2 = k NPN Transistors with Monolithic Bias Resistor Network This series of digital transistors is designed to replace a single device

More information

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments

More information

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package

MRA4003T3G Series, NRVA4003T3G Series. Surface Mount Standard Recovery Power Rectifier. SMA Power Surface Mount Package MRA43T3G Series, NRVA43T3G Series Surface Mount Standard Recovery Power Rectifier Power Surface Mount Package Features construction with glass passivation. Ideally suited for surface mounted automotive

More information

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE

NSR0340V2T1/D. Schottky Barrier Diode 40 VOLT SCHOTTKY BARRIER DIODE Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

More information

Single stage LNA for GPS Using the MCH4009 Application Note

Single stage LNA for GPS Using the MCH4009 Application Note Single stage LNA for GPS Using the MCH49 Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s MCH49 which is used as a Low Noise Amplifier (LNA) for GPS (Global

More information

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

More information

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers

MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,

More information

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W

MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors 16 A COMPLEMENTARY SILICON POWER TRANSISTORS 250 V, 200 W MJL21195 (PNP), MJL21196 (NPN) Silicon Power Transistors The MJL21195 and MJL21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

LA4450. Specifications. Monolithic Linear IC 2-Channel, 26V, Power Amplifier for Bus and Track in Car Stereo. SIP x13.

LA4450. Specifications. Monolithic Linear IC 2-Channel, 26V, Power Amplifier for Bus and Track in Car Stereo. SIP x13. Ordering number : EN49E LA44 Monolithic Linear IC -Channel, 6V, Power Amplifier for Bus and Track in Car Stereo http://onsemi.com Overview The LA44 is a single package -channel power Amplifier that supports

More information

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88

NTJD1155LT1G. Power MOSFET. 8 V, 1.3 A, High Side Load Switch with Level Shift, P Channel SC 88 NTJDL Power MOSFET V,.3 A, High Side Load Switch with Level Shift, P Channel SC The NTJDL integrates a P and N Channel MOSFET in a single package. This device is particularly suited for portable electronic

More information

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package

NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra

More information

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723 NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

More information

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers

MURS320T3G, SURS8320T3G, MURS340T3G, SURS8340T3G, MURS360T3G, SURS8360T3G. Surface Mount Ultrafast Power Rectifiers MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay

More information

FJP13007 High Voltage Fast-Switching NPN Power Transistor

FJP13007 High Voltage Fast-Switching NPN Power Transistor FJP3007 High Voltage Fast-Switching NPN Power Transistor Features High Voltage High Speed Power Switch Application High Voltage Capability High Switching Speed Suitable for Electronic Ballast and Switching

More information

LA4537MC. Specifications. Monolithic Linear IC Power Amplifier for 1.5V Headphone Stereos. Absolute Maximum Ratings at Ta = 25 C

LA4537MC. Specifications. Monolithic Linear IC Power Amplifier for 1.5V Headphone Stereos. Absolute Maximum Ratings at Ta = 25 C Ordering number : ENAA LAMC Monolithic Linear IC Power Amplifier for.v Headphone Stereos http://onsemi.com Features Low current drain Ω load drive capability Excellent reduced voltage characteristics Excellent

More information

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723 NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

More information

434MHz LNA for RKE Using the 2SC5245A Application Note

434MHz LNA for RKE Using the 2SC5245A Application Note 434MHz LNA for RKE Using the 2SC5245A Application Note http://onsemi.com Overview This application note explains about ON Semiconductor s 2SC5245A which is used as a Low Noise Amplifier (LNA) for RKE (Remote

More information

LA5774. Overview The LA5774 is a Separately-excited step-down switching regulator (variable type).

LA5774. Overview The LA5774 is a Separately-excited step-down switching regulator (variable type). Ordering number : ENA0742 Monolithic Linear IC Separately-excited Step-down Switching Regulator (Variable Type) http://onsemi.com Overview The is a Separately-excited step-down switching regulator (variable

More information

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS

MBR130LSFT1G. Surface Mount Schottky Power Rectifier. Plastic SOD 123 Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS MBR3LSFTG Surface Mount Schottky Power Rectifier Plastic SOD 23 Package This device uses the Schottky Barrier principle with a large area metal to silicon power diode. Ideally suited for low voltage, high

More information

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS MBRCT Switch mode Power Rectifier Dual Schottky Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature A Total ( A Per

More information

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator 25 ma Dual Output Low Dropout Linear Regulator The NCP554/NCV554 are dual output low dropout linear regulators with 2.% accuracy over the operating temperature range. They feature a fixed output voltage

More information

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ.

NSVF4017SG4. RF Transistor for Low Noise Amplifier. 12 V, 100 ma, f T = 10 GHz typ. RF Transistor for Low Noise Amplifier 1 V, 0 ma, f T = GHz typ. This RF transistor is designed for low noise amplifier applications. MCPH package is suitable for use under high temperature environment

More information

SMA3117. MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6. Features. Specifications

SMA3117. MMIC Amplifiler, 5V, 22.7mA, 0.1 to 3GHz, MCPH6. Features. Specifications Ordering number : EN8936A SMA3117 MMIC Amplifiler, 5V, 22.7mA,.1 to 3GHz, MCPH6 http://onsemi.com Features High Gain : Gp=33.5 typ. @2.2GHz Wideband response : fu=3.ghz Low current : ICC=22.7mA typ. High

More information

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS MBR735, MBR75 SWITCHMODE Power Rectifiers Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 75 C Operating Junction Temperature PbFree Packages are Available*

More information

Built-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package

Built-in low voltage reset and thermal shutdown circuit Compact TSSOP-24 package Ordering number : ENA1134A Bi-CMOS LSI Forward/Reverse Motor Driver http://onsemi.com Overview is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit is used, it supports

More information

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT

PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor

TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor TIP120 / TIP121 / TIP122 NPN Epitaxial Darlington Transistor Features Medium Power Linear Switching Applications Complementary to TIP125 / TIP126 / TIP127 Ordering Information 1 TO-220 1.Base 2.Collector

More information

The LA6571 is 5-channel driver for mini disk and compact disk applications (BTL-AMP: 5CH).

The LA6571 is 5-channel driver for mini disk and compact disk applications (BTL-AMP: 5CH). Ordering number : EN7739A LA6571 Monolithic Linear IC 5CH Driver for Mini Disk and Compact Disk http://onsemi.com Overview The LA6571 is 5channel driver for mini disk and compact disk applications (BTLAMP:

More information

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ PNP MJ NPN. Silicon Power Transistors 16 AMP COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ293 - PNP MJ294 - NPN Silicon Power Transistors The MJ293 (PNP) and MJ294 (NPN) utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

General Description. Applications. Power management Load switch Q2 3 5 Q1

General Description. Applications. Power management Load switch Q2 3 5 Q1 FDG6342L Integrated Load Switch Features Max r DS(on) = 150mΩ at V GS = 4.5V, I D = 1.5A Max r DS(on) = 195mΩ at V GS = 2.5V, I D = 1.3A Max r DS(on) = 280mΩ at V GS = 1.8V, I D = 1.1A Max r DS(on) = 480mΩ

More information

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistors 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistors These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features High DC

More information

1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY

1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY How to Choose for Design This article is to present a way to choose a switching controller for design in the s Selector Guide SGD514/D from ON Semiconductor. (http://www.onsemi.com/pub/collateral/sgd514d.pdf)

More information

AND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point

AND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point Paralleling of IGBTs Introduction High power systems require the paralleling of IGBTs to handle loads well into the 10 s and sometimes the 100 s of kilowatts. Paralleled devices can be discrete packaged

More information

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS

MJ21195G - PNP MJ21196G - NPN. Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON- POWER TRANSISTORS 250 VOLTS, 250 WATTS MJ295G - PNP MJ296G - NPN Silicon Power Transistors The MJ295G and MJ296G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners and linear

More information

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage

NCP786L. Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage Wide Input Voltage Range 5 ma Ultra-Low Iq, High PSRR Linear Regulator with Adjustable Output Voltage The is high performance linear regulator, offering a very wide operating input voltage range of up

More information

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC

LV8400V. Forward/Reverse Motor Driver. Bi-CMOS IC Ordering number : ENA1385A Bi-CMOS IC Forward/Reverse Motor Driver http://onsemi.com Overview The is a 1-channel motor driver IC using D-MOS FET for output stage and operates in one of the four modes under

More information

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS

2N5194G, 2N5195G. Silicon PNP Power Transistors 4 AMPERE POWER TRANSISTORS PNP SILICON VOLTS , Silicon PNP Power Transistors These devices are designed for use in power amplifier and switching circuits; excellent safe area limits. Features Complement to NPN 2N5191, 2N5192 These Devices are PbFree

More information

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

NJW21193G (PNP) NJW21194G (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS NJW21193G (PNP) NJW2119G (NPN) Silicon Power Transistors The NJW21193G and NJW2119G utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

LV8402V. 2ch Forward/Reverse Motor Driver. Bi-CMOS IC

LV8402V. 2ch Forward/Reverse Motor Driver. Bi-CMOS IC Ordering number : ENA1888A LV8402V Bi-CMOS IC 2ch Forward/Reverse Motor Driver http://onsemi.com Overview LV8402T is a 2ch forward/reverse motor driver IC using D-MOS FET for output stage. As MOS circuit

More information

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes

MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes , Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

More information

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.

MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features. MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate

More information

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS

MJE15032 (NPN), MJE15033 (PNP) Complementary Silicon Plastic Power Transistors 8.0 AMPERES POWER TRANSISTORS COMPLEMENTARY SILICON 250 VOLTS, 50 WATTS MJE1502 (NPN), MJE150 (PNP) Complementary Silicon Plastic Power Transistors Designed for use as highfrequency drivers in audio amplifiers. Features High DC Current Gain High Current Gain Bandwidth Product

More information

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors

MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP) Complementary Silicon Plastic Power Transistors MJE1528, MJE15 (NPN), MJE1529, MJE151 (PNP) Complementary Silicon Plastic Power Transistors These devices are designed for use as highfrequency drivers in audio amplifiers. Features High Current Gain Bandwidth

More information

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier

SS13FL, SS14FL. Surface Mount Schottky Barrier Rectifier SS13FL, SS14FL Surface Mount Schottky Barrier Rectifier Features Ultra Thin Profile Maximum Height of 1.08 mm UL Flammability 94V 0 Classification MSL 1 Green Mold Compound These Devices are Pb Free, Halogen

More information

NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS

NSVJ3910SB3 N-Channel JFET 25V, 20 to 40mA, 40mS NSVJ910SB N-Channel JFET 25V, 20 to 40mA, 40mS Automotive JFET designed for compact and efficient designs and including high gain performance. AEC-Q101 qualified JFET and PPAP capable suitable for automotive

More information

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

More information

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors

2N6487, 2N6488 (NPN), 2N6490, 2N6491 (PNP) Complementary Silicon Plastic Power Transistors 2N6487, 2N6488 (), 2N649, 2N6491 () Complementary Silicon Plastic Power Transistors These devices are designed for use in generalpurpose amplifier and switching applications. Features High DC Current Gain

More information

J109 / MMBFJ108 N-Channel Switch

J109 / MMBFJ108 N-Channel Switch J9 / MMBFJ8 N-Channel Switch Features This device is designed for digital switching applications where very low on resistance is mandatory. Sourced from process 8 J9 / MMBFJ8 N-Channel Switch 3 2 TO-92

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS

MUR405, MUR410, MUR415, MUR420, MUR440, MUR460. SWITCHMODE Power Rectifiers ULTRAFAST RECTIFIERS 4.0 AMPERES, VOLTS MUR45, MUR4, MUR415, MUR42, MUR44, MUR46 SWITCHMODE Power Rectifiers These state of the art devices are a series designed for use in switching power supplies, inverters and as free wheeling diodes. Features

More information

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS BD89 (NPN), BD8 (PNP) Plastic High Power Silicon Transistor These devices are designed for use in high power audio amplifiers utilizing complementary or quasi complementary circuits. Features DC Current

More information

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon

MMBT6428LT1G MMBT6429LT1G NSVMMBT6429LT1G. Amplifier Transistors. NPN Silicon MMBT648LTG, MMBT649LTG, NSVMMBT649LTG Amplifier Transistors NPN Silicon Features NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AECQ Qualified and

More information

NSVF5501SK RF Transistor for Low Noise Amplifier

NSVF5501SK RF Transistor for Low Noise Amplifier RF Transistor for Low Noise Amplifier 10 V, 70 ma, f T =. GHz typ. RF Transistor This RF transistor is designed for RF amplifier applications. SSFP package is contribute to down size of application because

More information

KSC2383 NPN Epitaxial Silicon Transistor

KSC2383 NPN Epitaxial Silicon Transistor KSC2383 NPN Epitaxial Silicon Transistor TO-92L. Emitter 2. Collector 3. Base Ordering Information Part Number Top Mark Package Packing Method KSC2383OTA C2383 O- TO-92 3L Ammo KSC2383YTA C2383 Y- TO-92

More information

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection

NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection 8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf

More information

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection

NUF4401MNT1G. 4-Channel EMI Filter with Integrated ESD Protection 4-Channel EMI Filter with Integrated ESD Protection The is a four channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 200 and C = 5 pf deliver

More information

BC857BTT1G. General Purpose Transistor. PNP Silicon

BC857BTT1G. General Purpose Transistor. PNP Silicon General Purpose Transistor PNP Silicon These transistors are designed for general purpose amplifier applications. They are housed in the SOT46/SC75 which is designed for low power surface mount applications.

More information

NCP A Low Dropout Linear Regulator

NCP A Low Dropout Linear Regulator 1.5 A Low Dropout Linear Regulator The NCP566 low dropout linear regulator will provide 1.5 A at a fixed output voltage. The fast loop response and low dropout voltage make this regulator ideal for applications

More information

BAV103 High Voltage, General Purpose Diode

BAV103 High Voltage, General Purpose Diode BAV3 High Voltage, General Purpose Diode Cathode Band SOD80 Description A general purpose diode that couples high forward conductance fast swiching speed and high blocking voltages in a glass leadless

More information

74VHC14 Hex Schmitt Inverter

74VHC14 Hex Schmitt Inverter 74HC14 Hex Schmitt Inverter Features High Speed: t PD = 5.5 ns (Typ.) at CC = 5 Low Power Dissipation: I CC = 2 μa (Max.) at T A = 25 C High Noise Immunity: NIH = NIL = 28% CC (Min.) Power down protection

More information

MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS

MAC223A6, MAC223A8, MAC223A10. Triacs. Silicon Bidirectional Thyristors. TRIACS 25 AMPERES RMS 400 thru 800 VOLTS MAC3A6, MAC3A8, MAC3A Triacs Preferred Device Silicon Bidirectional Thyristors Designed primarily for full-wave ac control applications such as lighting systems, heater controls, motor controls and power

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

More information

S1AFL - S1MFL. Surface General-Purpose Rectifier

S1AFL - S1MFL. Surface General-Purpose Rectifier SAFL - SMFL Surface General-Purpose Rectifier Features Ultra Thin Profile Maximum Height of.08 mm UL Flammability 94V 0 Classification MSL Green Mold Compound These Devices are Pb Free, Halogen Free Free

More information

MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in

MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in Surface Mount Schottky Power Rectifier Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial construction with oxide passivation

More information

LB1945D. PWM Current Control Stepping Motor Driver

LB1945D. PWM Current Control Stepping Motor Driver Ordering number : EN7633A Monolithic Digital IC PWM Current Control Stepping Motor Driver http://onsemi.com Overview The is a PWM current control stepping motor driver that uses a bipolar drive technique.

More information

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL

NTTFS3A08PZTWG. Power MOSFET 20 V, 15 A, Single P Channel, 8FL NTTFS3A8PZ Power MOSFET V, 5 A, Single P Channel, 8FL Features Ultra Low R DS(on) to Minimize Conduction Losses 8FL 3.3 x 3.3 x.8 mm for Space Saving and Excellent Thermal Conduction ESD Protection Level

More information

SEAMS DUE TO MULTIPLE OUTPUT CCDS

SEAMS DUE TO MULTIPLE OUTPUT CCDS Seam Correction for Sensors with Multiple Outputs Introduction Image sensor manufacturers are continually working to meet their customers demands for ever-higher frame rates in their cameras. To meet this

More information

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS

2N6387, 2N6388. Plastic Medium-Power Silicon Transistors DARLINGTON NPN SILICON POWER TRANSISTORS 8 AND 10 AMPERES 65 WATTS, VOLTS Plastic Medium-Power Silicon Transistors These devices are designed for generalpurpose amplifier and lowspeed switching applications. Features High DC Current Gain h FE = 2500 (Typ) @ I C = 4.0 Adc CollectorEmitter

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR

NSS1C201L, NSV1C201L. 100 V, 3.0 A, Low V CE(sat) NPN Transistor. 100 VOLTS, 3.0 AMPS NPN LOW V CE(sat) TRANSISTOR NSSCL, NSVCL V,. A, Low V CE(sat) NPN Transistor ON Semiconductor s e PowerEdge family of low V CE(sat) transistors are miniature surface mount devices featuring ultra low saturation voltage (V CE(sat)

More information

PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram

PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram 3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded

More information

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89

NTA4153N, NTE4153N, NVA4153N, NVE4153N. Small Signal MOSFET. 20 V, 915 ma, Single N Channel with ESD Protection, SC 75 and SC 89 NTA45N, NTE45N, NVA45N, NVE45N Small Signal MOSFET V, 95 ma, Single N Channel with ESD Protection, SC 75 and SC 89 Features Low R DS(on) Improving System Efficiency Low Threshold Voltage,.5 V Rated ESD

More information

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

MBRA320T3G Surface Mount Schottky Power Rectifier

MBRA320T3G Surface Mount Schottky Power Rectifier Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction

More information

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

More information

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network

NSBC114EDP6T5G Series. Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network Preferred Devices Dual Digital Transistors (BRT) NPN Silicon Surface Mount Transistors with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device

More information

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS

MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors 16 AMPERES COMPLEMENTARY SILICON POWER TRANSISTORS 250 VOLTS, 200 WATTS MJW21195 (PNP) MJW21196 (NPN) Silicon Power Transistors The MJW21195 and MJW21196 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes

MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF

More information

CAT5126. One time Digital 32 tap Potentiometer (POT)

CAT5126. One time Digital 32 tap Potentiometer (POT) One time Digital 32 tap Potentiometer (POT) Description The CAT5126 is a digital POT. The wiper position is controlled with a simple 2-wire digital interface. This digital potentiometer is unique in that

More information

TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS

TIP47G, TIP48G, TIP50G. High Voltage NPN Silicon Power Transistors 1.0 AMPERE POWER TRANSISTORS NPN SILICON VOLTS 40 WATTS High Voltage NPN Silicon Power Transistors This series is designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features 25 V to V (Min) V

More information

MJD44H11 (NPN) MJD45H11 (PNP)

MJD44H11 (NPN) MJD45H11 (PNP) MJDH (NPN) MJD5H (PNP) Preferred Device Complementary Power Transistors For Surface Mount Applications Designed for general purpose power and switching such as output or driver stages in applications such

More information