AND8295/D. A 36W Ballast Application with the NCP5106B

AND8312/D. A 36W Ballast Application with the NCP5104

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Figure 1. NCP5104 Evaluation Board

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1. DEFINE THE SPECIFICATION 2. SELECT A TOPOLOGY

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Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features

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AND8450/D. NCV7680 LED Driver Linear Regulator Performance APPLICATION NOTE

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ASM1232LP/LPS 5V μp Power Supply Monitor and Reset Circuit

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AND9100/D. Paralleling of IGBTs APPLICATION NOTE. Isothermal point

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AND8289. LED Driving with NCP/V3063

LE riving with NCP/V3063 Prepared by: Petr Konvicny, Bernie Weir ON Semiconductor Introduction Improvements in high brightness LEs present the potential for creative new lighting solutions that offer an

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CAT4237EVAL2EVB. CAT4237 High Voltage White LED Driver Evaluation Board User's Manual EVAL BOARD USER S MANUAL

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PCS2P2309/D. 3.3V 1:9 Clock Buffer. Functional Description. Features. Block Diagram

3.3V 1:9 Clock Buffer Features One-Input to Nine-Output Buffer/Driver Buffers all frequencies from DC to 133.33MHz Low power consumption for mobile applications Less than 32mA at 66.6MHz with unloaded

NTS4173PT1G. Power MOSFET. 30 V, 1.3 A, Single P Channel, SC 70

NTS17P Power MOSFET V, 1. A, Single P Channel, SC 7 Features V BV ds, Low R DS(on) in SC 7 Package Low Threshold Voltage Fast Switching Speed This is a Halide Free Device This is a Pb Free Device Applications

BYV SWITCHMODE Power Rectifier. ULTRAFAST RECTIFIER 16 AMPERES, 200 VOLTS t rr = 35 ns

BYV32-0 SWITCHMODE Power Rectifier Features and Benefits Low Forward Voltage Low Power Loss/High Efficiency High Surge Capacity 175 C Operating Junction Temperature A Total (8 A Per Diode Leg) PbFree Packages

FJP13007 High Voltage Fast-Switching NPN Power Transistor

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MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V

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NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device

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AND8388/D. Input Dynamic Range Extension of the BelaSigna 300 Series

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MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount

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AND9043/D. An Off-Line, Power Factor Corrected, Buck-Boost Converter for Low Power LED Applications APPLICATION NOTE.

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STK44-NGEVB, STK44-1NGEVB, STK44-14NGEVB STK44-N Series Evaluation Board User's Manual EVAL BOARD USER S MANUAL Thick-Film Hybrid IC for use used in from 6 W to 18 W 1ch class AB audio power amplifiers.

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ASM3P2669/D. Peak EMI Reducing Solution. Features. Product Description. Application. Block Diagram

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Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The

Is Now Part of To learn more about ON Semiconductor, please visit our website at

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC

BD809 (NPN), BD810 (PNP) Plastic High Power Silicon Transistor 10 AMPERE POWER TRANSISTORS 80 VOLTS 90 WATTS

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AND8291/D. >85% Efficient 12 to 5 VDC Buck Converter

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BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES

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Advance Information Integrated Relay/Solenoid Driver Optimized to Switch 3 V to 5 V Relays from a 5 V Rail Compatible with TX and TQ Series Telecom Relays Rated up to 625 mw at 3 V to 5 V Features Low

MJH11017, MJH11019, MJH11021 (PNP) MJH11018, MJH11020, MJH11022 (NPN) Complementary Darlington Silicon Power Transistors

MJH1117, MJH1119, MJH1121 () MJH1118, MJH112, MJH1122 () Complementary Darlington Silicon Power Transistors These devices are designed for use as general purpose amplifiers, low frequency switching and

MBR735, MBR745. SWITCHMODE Power Rectifiers. SCHOTTKY BARRIER RECTIFIERS 7.5 AMPERES 35 and 45 VOLTS

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NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75

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NCP800. Lithium Battery Protection Circuit for One Cell Battery Packs

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NUP4302MR6T1G. Schottky Diode Array for Four Data Line ESD Protection

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NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23

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NSQA6V8AW5T2 Series Transient Voltage Suppressor

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PCS2I2309NZ. 3.3 V 1:9 Clock Buffer

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MJD44H11 (NPN) MJD45H11 (PNP)

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RURG8060-F085 80A, 600V Ultrafast Rectifier

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MJH6284 (NPN), MJH6287 (PNP) Darlington Complementary Silicon Power Transistors

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MURS120T3G Series, SURS8120T3G Series. Surface Mount Ultrafast Power Rectifiers

MURS12T3G Series, SURS812T3G Series Surface Mount Ultrafast Power Rectifiers MURS5T3G, MURS1T3G, MURS115T3G, MURS12T3G, MURS14T3G, MURS16T3G, SURS85T3G, SURS81T3G, SURS8115T3G, SURS812T3G, SURS814T3G,

SN74LS122, SN74LS123. Retriggerable Monostable Multivibrators LOW POWER SCHOTTKY

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10 AMPERE DARLINGTON COMPLEMENTARY SILICON POWER TRANSISTORS VOLTS 125 WATTS MAXIMUM RATINGS THERMAL CHARACTERISTICS TIP141 TIP142

... designed for general purpose amplifier and low frequency switching applications. High DC Current Gain Min h FE = 1000 @ I C = 5 A, V CE = 4 V Collector Emitter Sustaining Voltage @ 30 ma V CEO(sus)

NDF10N62Z. N-Channel Power MOSFET

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MURA105T3G MURA110T3G SURA8110T3G. Surface Mount Ultrafast Power Rectifiers ULTRAFAST RECTIFIERS 1 AMPERE, VOLTS

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MJE700, MJE702, MJE703 (PNP) - MJE800, MJE802, MJE803 (NPN) Plastic Darlington Complementary Silicon Power Transistors

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NCL30000LED2GEVB/D Vac up to 15 Watt Dimmable LED Driver Demo Board Operation EVALUATION BOARD MANUAL

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MBR20200CT. Switch mode Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 VOLTS

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MURS32T3G, SURS832T3G, MURS34T3G, SURS834T3G, MURS36T3G, Surface Mount Ultrafast Power Rectifiers This series employs the state of the art epitaxial construction with oxide passivation and metal overlay

MURA160T3G SURA8160T3G. Surface Mount Ultrafast Power Rectifier ULTRAFAST RECTIFIER 1 AMPERE, 600 VOLTS

MURA6T3G, SURA86T3G Surface Mount Ultrafast Power Rectifier Ideally suited for high voltage, high frequency rectification, or as free wheeling and protection diodes in surface mount applications where

Adc. W W/ C T J, T stg 65 to C

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FGH12040WD 1200 V, 40 A Field Stop Trench IGBT

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MMUN2211LT1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network

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NTK3043N. Power MOSFET. 20 V, 285 ma, N Channel with ESD Protection, SOT 723

NTKN Power MOSFET V, 8 ma, N Channel with ESD Protection, SOT 7 Features Enables High Density PCB Manufacturing % Smaller Footprint than SC 89 and 8% Thinner than SC 89 Low Voltage Drive Makes this Device

NTJS4405N, NVJS4405N. Small Signal MOSFET. 25 V, 1.2 A, Single, N Channel, SC 88

NTJSN, NVJSN Small Signal MOSFET V,. A, Single, N Channel, SC 88 Features Advance Planar Technology for Fast Switching, Low R DS(on) Higher Efficiency Extending Battery Life AEC Q Qualified and PPAP Capable

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, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,

NGB18N40CLB, NGB18N40ACLB. Ignition IGBT 18 Amps, 400 Volts. N Channel D 2 PAK. 18 AMPS, 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.

NGB8N4CLB, NGB8N4ACLB Ignition IGBT 8 Amps, 4 Volts N Channel D PAK This Logic Level Insulated Gate Bipolar Transistor (IGBT) features monolithic circuitry integrating ESD and Over Voltage clamped protection

NTK3139P. Power MOSFET. 20 V, 780 ma, Single P Channel with ESD Protection, SOT 723

NTK9P Power MOSFET V, 78 ma, Single P Channel with ESD Protection, SOT 7 Features P channel Switch with Low R DS(on) % Smaller Footprint and 8% Thinner than SC 89 Low Threshold Levels Allowing.5 V R DS(on)

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MBRA320T3G Surface Mount Schottky Power Rectifier

Surface Mount Schottky Power Rectifier Power Surface Mount Package Employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State of the art geometry features epitaxial construction

NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant

Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise

NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m

Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

NGD18N40CLBT4G. Ignition IGBT 18 Amps, 400 Volts N Channel DPAK. 18 AMPS 400 VOLTS V CE(on) 2.0 I C = 10 A, V GE 4.5 V

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P2042A LCD Panel EMI Reduction IC

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MARKING DIAGRAM Mechanical Characteristics. B2E1 Epoxy Meets UL 94 V in

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NLAS7222B, NLAS7222C. High-Speed USB 2.0 (480 Mbps) DPDT Switches

High-Speed USB 2.0 (480 Mbps) DPDT Switches ON Semiconductor s NLAS7222B and NLAS7222C are part of a series of analog switch circuits that are produced using the company s advanced sub micron CMOS technology,

EMC2DXV5T1G, EMC3DXV5T1G, EMC4DXV5T1G, EMC5DXV5T1G. Dual Common Base-Collector Bias Resistor Transistors

EMCDXV5TG, EMCDXV5TG, EMCDXV5TG, EMC5DXV5TG Dual Common Base-Collector Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor

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Schottky Barrier Diode Schottky barrier diodes are optimized for very low forward voltage drop and low leakage current and are used in a wide range of dc dc converter, clamping and protection applications

NVLJD4007NZTBG. Small Signal MOSFET. 30 V, 245 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package

NVLJD7NZ Small Signal MOSFET V, 2 ma, Dual, N Channel, Gate ESD Protection, 2x2 WDFN Package Features Optimized Layout for Excellent High Speed Signal Integrity Low Gate Charge for Fast Switching Small

NCP5504, NCV ma Dual Output Low Dropout Linear Regulator

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NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m

Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)

NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET

NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device

MBRB20200CT. SWITCHMODE Power Rectifier. Dual Schottky Rectifier SCHOTTKY BARRIER RECTIFIER 20 AMPERES, 200 V

MBRBCT SWITCHMODE Power Rectifier Dual Schottky Rectifier This device uses the Schottky Barrier technology with a platinum barrier metal. This state of the art device is designed for use in high frequency

PCS3P8103A General Purpose Peak EMI Reduction IC

General Purpose Peak EMI Reduction IC Features Generates a 4x low EMI spread spectrum clock Input Frequency: 16.667MHz Output Frequency: 66.66MHz Tri-level frequency Deviation Selection: Down Spread, Center

MUN5211T1 Series. NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network NPN SILICON BIAS RESISTOR TRANSISTORS

MUNT Series Preferred Devices Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single

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The SN74LS298 is a Quad 2-Port Register. It is the logical equivalent of a quad 2-input multiplexer followed by a quad 4-bit edge-triggered register. A Common Select input selects between two 4-bit input

FGH40N60SFDTU-F V, 40 A Field Stop IGBT

FGH40N60SFDTU-F085 600 V, 40 A Field Stop IGBT Features High Current Capability Low Saturation Voltage: V CE(sat) = 2.3 V @ I C = 40 A High Input Impedance Fast Switching RoHS Compliant Qualified to Automotive

NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8

NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free

PIN CONNECTIONS MAXIMUM RATINGS (T J = 25 C unless otherwise noted) SC 75 (3 Leads) Parameter Symbol Value Unit Drain to Source Voltage V DSS 30 V

NTA7N, NVTA7N Small Signal MOSFET V, 4 ma, Single, N Channel, Gate ESD Protection, SC 7 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate NV Prefix for Automotive

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23

NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management

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The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications. Their high breakdown voltage

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NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant

NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter

NDF10N60Z. N-Channel Power MOSFET 600 V, 0.75

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NTNS3164NZT5G. Small Signal MOSFET. 20 V, 361 ma, Single N Channel, SOT 883 (XDFN3) 1.0 x 0.6 x 0.4 mm Package

NTNS36NZ Small Signal MOSFET V, 36 ma, Single N Channel, SOT 883 (XDFN3). x.6 x. mm Package Features Single N Channel MOSFET Ultra Low Profile SOT 883 (XDFN3). x.6 x. mm for Extremely Thin Environments