SKA LNA Technologies and Topologies

Transcription

1 SKA LNA Technologies and Topologies Saswata Bhaumik PhD Student Dr Danielle George The University of Manchester

2 Overview LNA design work carried out around the World Purpose of presentation is to bring together this work Contributions from most major players within SKA Highlight some of the key research and development ONLY MEASURED DATA INCLUDED

3 Contributors ASTRON& GIF CSIRO California Institute of Technology TDP France OPAR University of Calgary University of Manchester

4 ASTRON APERTIF 1e iteration LNA Currently installed LNA Frequency (MHz) Fmin (db) Rn (Ohm) Γopt mag. Γopt phase Fmin (db) Rn (Ohm) Γopt mag. Γopt phase

5 ASTRON - APERTIF 1e iteration LNA Currently installed LNA Gain 40dB 42dB NF50 70K@1.4GHz 35K across band Linearity OIP3: 25dB OIP3: 25dB Transistors COTS: stage1: ATF54143, stages 2and 3: MGA53543 COTS: same type of components

6 ASKAP CSIRO COTS components ATF PHEMTs MHz 300 Ω input impedance, differential 50 Ω output Noise Calibration Procedure Te of selected LNAs with liquid nitrogen. Y factor of the LNAs on noise test fixture. Calculate Thot and ENR of the noise test fixture. Calibration valid for same series LNAs. Reference Acquired with permission from CSIRO

7 LNA Details 90nm CMOS 0.8 to1.4ghz Differential 50 Ω system 25K NF(50) 15dB gain Differential Noise Measurement University of Calgary Four possible combinations of two input ports and two output ports Single ended F31, F32, F41, and F42 and G31, G32, G41 and G42 with a noise figure analyzer. Unused ports terminated in 50. Determination of input referred available noise powers. Differential noise figure determination through theoretical calculation. Reference Acquired with permission from Dr. Leonid Belostotski. Copyright belongs to IEEE.

8 LNA Details: QuBiC4G: 0.25μm SiGe 2 stages Differential amplifier 100 Ohms impedance 72.6mW power dissipation 1 dbm OP1dB France OPAR Reference SKADS wiki

9 LNA Details: QuBiC4X: SiGe:C Single ended 50 Ohm 300Mhz 1Ghz 69.3 mw power consumption 2dBm OP1dB France OPAR Reference SKADS wiki

10 1μm gate length InP process LNA measured data Gain: >10dB Frequency: 0.2 2GHz Power dissipation: 45mW University of Manchester InP Development Reference SKADS wiki

11 Caltech TDP Models developed at 12K Resistive feedback highly effective with the SiGe technology for broadband design. Noise Measure is more important than Tmin. New noise measurement procedure being experimented with. CIT Design NEUT WBAL2 Type SiGe differential feedback LNA. IBM 8HP process InP differential LNA Frequency Range 0.1 to to 11 Noise (June 09) 15K Meas 60K P5T4 SiGe differential feedback LNA. IBM 8HP process 0.5 to 4 60K WBA13 InP LNA 0.5 to 12 Meas <10K

12 Caltech TDP LNA Details Measured data of 2 LNAs with ST and commercially available NXP transistors at 1.4GHz. Reference- Matched Wideband LNAs for radio astronomy,s. Weinreb, J. Bardin, H.Mani, G. Jones. Published in Review of Scientific Instruments,2009

13 LNA Details University of Manchester GaAs mhemt 70nm OMMIC GaAs mhemt Two stage single ended MMIC LNA 50Ohm system Gain: 23dB 35K NF(50) Frequency: 0.7 4Ghz

14 University of Manchester Transistor characterisation Several wafer samples of mhemts and phemts of both GaAs and InP have been measured. Temperature stabilisation may be important gm (ms/mm) Power (mw) process 1 process 2 process 3 process 4 process 5 process 6 gm (msiemens/mm) Temp (Celcius)

15 Summary Measured LNA Data Table ASTRON *IGN CSIRO University of Calgary OPAR Gain 42dB 28dB 15dB *27dB **24dB NT Frequency Technology Topology Impedance 35K *35K GHz *0.3 1 GHz GaAs phemt SE & *Diff 50Ω *150 40K GHz GaAs phemt 14K 25K *65K **56K GHz * **0.4 1 GHz 90nm CMOS 0.25µm SiGe HBT Diff SE & Diff Diff* & SE** 300Ω 85Ω 50Ω *100Ω **50Ω Temperature RT RT RT RT & Cryo (22K) University of Manchester (M&N) California Institute of Technology 10dB >30dB 25dB N.A. *55K **10K 0.2 2GHz ** GHz 1µm InP phemt SiGe HBT & InP University of Manchester (MACS) 35K SE Diff & SE SE 50Ω 270Ω diff 50Ω RT *RT & **Cryo (17K) GHz 70nm GaAs mhemt RT

16 Conclusions (i) GaAs phemt, GaAs mhemt, InP phemt, SiGe HBT and CMOS technology has been researched. Measured data of 6 SE and 5 differential LNA has been shown. 14K CMOS SE LNA at RT BY University of Calgary. 25K NT CMOS differential GHz LNA has been measured with 15dB gain at RT in University of Calgary. Cryogenic (15K ambient) SiGe Differential LNA with 10K NT and decade bandwidth has been measured in CalTech (TDP). OPAR has measured 10K NT and 20dB gain single ended 22K ambient temperature. 2 promising and comprehensive differential noise measurement techniques by CSIRO and University of Calgary.

17 Conclusions (ii) GaAsLNA developed by ASTRON has OIP3 of 25dBm. And impressive results from Apertif. Temperature stabilisation is necessary to maintain consistent NT and gain. How cost effective is it? State of the art GaAs devices can exhibit lower power consumption characteristics than InP devices to achieve same transconductance. Linearity issues with low power? 5K NT possible to achieve with cooling down to 15K ambient temperature. The associated power also decreases significantly. But is it cost effective? Not only Tmin temperature but also Noise Measure is very (if not the most) important aspect of LNA. Backs up argument of having LNA test verification facility in Europe (Dr George suggests ASTRON as base!)

18 Appendix-1 (Caltech) Noise Temp(K) K, 1.8V, 50mA 195K, 1.8V, 44mA 105K, 1.2V, 20mA 77K, 1.2V, 20mA 60K, 1.2V, 20mA 15K, 1.2V, 20mA Frequency (GHz) Reference Cryogenics Feasibility and LNA Options, Arecibo Focal Phased Array Workshop, Cornell University, July 21, 2009

19 Appendix-1 (Caltech) 6K noise, 20mW power, and -10 db input return loss are feasible specs Reference- Matched Wideband LNAs for radio astronomy,s. Weinreb, J. Bardin, H.Mani, G. Jones. Published in Review of Scientific Instruments,2009