Dr Danielle George Dr Saswata Bhaumik
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1 TQP13N Process Evaluation Dr Danielle George Dr Saswata Bhaumik S c h o o l o f E l e c t r i c a l a n d E l e c t r o n i c E n g i n e e r i n g T h e U n i v e r s i t y o f M a n c h e s t e r May 211
2 Introduction TQP13 Process Evaluation Phase 1 Phase 2 Phase 3 Purpose Importance of Semiconductor technology Determination of most suitable process(s) for SKA Parameters to look at while May211 May 211, PAFSKA211 2
3 HEMT Process Validation Phase 1 1. Noise 2. Gain 3. Power efficiency 4. Reliability 5. Repeatability 6. Availability May211 May 211, PAFSKA211 3
4 HEMT Validation Process Different Sparameter Noise Details Sizes samples Samples Samples 1 8 8x4 7x2 15nm GaAs phemt 2 9 9x4 5x2 15nm GaAs mhemt 3 4 4x4 4x2 13nm GaAs phemt 4 7 7x4 4x2 1nm InP phemt 5 8 8x3 8x2 15nm GaAs mhemt 6 6 6x3 3x2 7nm GaAs mhemt 7 1 1x6 15nm GaAs phemt 8 1 1x6 1nm InP phemt 9 3 3x6 1nm GaAs phemt 1 5 5x4 25nm GaAs phemt Total types MMIC Parameters: 1. Reproducibility 2. Reliability 3. Yield 4. Future Availability 5. Power, Temperature, Cost Ongoing/Future characterisation work: 1. HEMTs of 2/3 processes 2. Further Characterisation of 2 of 9 above processes 3. Cryogenic characterisation of HEMTs of shortlisted processes May211 May 211, PAFSKA211 4
5 DC Measurements Id [E3] Vds [E+] Vgs(V) 4.m 38.m 36.m 34.m 32.m 3.m 28.m 26.m 24.m 22.m 2.m 18.m 16.m 14.m 12.m 1.m 8.m 6.m 4.m 2.m. 2.m 4.m 6.m 8.m 1.m 12.m 14.m 16.m 18.m 2.m 22.m 24.m 26.m 28.m 3.m 32.m 34.m 36.m 38.m 4.m 42.m 44.m 46.m 48.m 5.m 52.m 54.m 56.m 58.m 6.m Ig [E6] Vgs [E3] Vds(V). 5.m 1.m 15.m 2.m 25.m 3.m 35.m 4.m 45.m 5.m 55.m 6.m 65.m 7.m 75.m 8.m 85.m 9.m 95.m 1. Plot TriQuint_DpHEMT_13nm_TQP13_3DEG/chip1_4x25/gm_characteristics/Gm_by_width C:796 Vds=75. mv, Vgs=22. mv, Gm_per_mm_width=786.m PO A Process 3 4x25µm device Gm_per_mm_width [E+] Vgs [E3] Vds(V). 5.m 1.m 15.m 2.m 25.m 3.m 35.m 4.m 45.m 5.m 55.m 6.m 65.m 7.m 75.m 8.m 85.m 9.m 95.m X Y May211 May 211, PAFSKA211 5
6 Transconductance Comparison May211 May 211, PAFSKA211 6
7 Temperature Dependency of g m May211 May 211, PAFSKA211 7
8 Temperature Dependency of g m May211 May 211, PAFSKA211 8
9 Minimum Noise Figure Comparison May211 May 211, PAFSKA211 9
10 Temperature Dependency of Noise May211 May 211, PAFSKA211 1
11 HEMT Process Validation Phase 2 1. Process reliability 2. Repeatability 3. PDK reliability 4. LNA capability 5. Cost May211 May 211, PAFSKA211 11
12 TQP13N Validation Design Frequency Impedance Topology 7MHz 1.4GHz UOM4 5Ω Single Ended 7MHz 1.4GHz UOM5 12Ω PseudoDifferential.4GHz 1.4GHz UOM6 12Ω PseudoDifferential Overview I. The UOM4 LNA will be connected to a differential antenna with a balun. II. UOM5 and UOM6 LNAs will be directed connected to the differential antenna of AAVP program. III. The chip dimension of each design is 1.5mm x 1mm. IV. Due to space constraint, offchip components have been used to achieve high specifications and bandwidth for all the designs. May211 May 211, PAFSKA211 12
13 LNA Topologies May211 May 211, PAFSKA211 13
14 UMAN4 LNA db(s(2,1)) nf(2) db(s(2,2)) db(s(1,1)) E7 1E8 1E9 freq, Hz Parameters Stage1 Stage2 Stage3 V g (mv) V d (mv) I d (mva) Power (mw) E freq, GHz Frequency(GHz) Noise Figure(dB) Gain(dB) [Noise Temperature (Kelvin)].5 4.2[294] [185] [91] [56] [4] [39] 35 May211 May 211, PAFSKA211 14
15 UMAN5 LNA db(s(2,1)) ) nf(2) db(s(2,2)) db(s(1,1)) E8 1E9 freq, Hz 6E freq, GHz Parameters Stage1 Stage2 Stage3 V g (mv) V d (mv) I d (mva) Power (mw) Frequency(GHz) Noise Figure(dB) Gain(dB) [Noise Temperature (Kelvin)].1 2.9[23] [81] [59] [56] [59] 29 May211 May 211, PAFSKA211 15
16 UMAN4 LNA db(s(2,1)) ) 2 2 nf(2) db(s(2,2)) db(s(1,1)) E7 1E8 freq, Hz 1E9 6E freq, GHz Parameters Stage1 Stage2 Stage3 Frequency(GHz) Noise Figure(dB) Gain(dB) V g (mv).5.5. [Noise Temperature (Kelvin)] V d (mv) [23] 33. I d (mva) [81] 33. Power (mw) [59] [56] [59] 29 May211 May 211, PAFSKA211 16
17 HEMT Process Validation Phase 3 Underway 1. Process reliability 2. Repeatability Immediate Future 1. PDK reliability 2. LNA capability 3. Cost May211 May 211, PAFSKA211 17
18 Phase 3 Plot TriQuint_DpHEMT_13nm_TQP13_3DEG 1/TQP6x25/gm_characterisation/Gm_by_width Gm_per_mm_width [E3] Ig [E6] C:118 Vds=1.25 V, Vgs=2. mv, Gm_per_mm_width=79.7m Vgs [E3] Vds(V). 5.m 1.m 15.m 2.m 25.m 3.m 35.m 4.m 45.m 5.m 55.m 6.m 65.m 7.m 75.m Plot TriQuint_DpHEMT_13nm_TQP13_3DEG 1/TQP6x25/gm_characterisation/IgVg 8 6 Vds(V). 5.m 1.m 15.m 2.m 25.m 8.m 85.m 9.m 95.m m 85.m 9.m 95.m PO A PO A X Y Id [E3] Plot TriQuint_DpHEMT_13nm_TQP13_3DEG 1/TQP6x25/IV_characteristics/IV M:1415 Vgs=5. mv, Vds=1. V, Id=63.82 ma Vds [E+] Vgs(V) 4.m 38.m 36.m 34.m 32.m 3.m 28.m 26.m 24.m 22.m 2.m 18.m 16.m 14.m 12.m 1.m 8.m 6.m 4.m 2.m. 2.m 4.m Process 3 6x25µm device 4 3.m Vgs [E3] 35.m 4.m 45.m 5.m 55.m 6.m 65.m 7.m 75.m X Y 6.m 8.m 1.m 12.m 14.m 16.m 18.m 2.m 22.m 24.m 26.m 28.m 3.m 32.m 34.m 36.m 38.m 4.m 42.m 44.m 46.m 48.m 5.m PO A X Y May211 May 211, PAFSKA211 18
19 Achievements Achievements I. Evaluated HEMTs of 1 low noise processes II. Shortlisted 3 processes for SKA frequency bands III. Working MIC differential LNA for AAVP low IV. MIC differential LNA for AAVP mid V. MMIC LNA designs based on TQP13N for AAVP low and mid May211 May 211, PAFSKA211 19
20 Plans 1. Evaluation of Phase 2 Characterisation of fabricated LNAs 2% space utilised 2. HEMT Process Validation Phase 3 Utilise remaining space(partial or full) Modified designs / new designs (could include designs at PAFSKA frequencies if desirable) Characterise HEMTs from different regions of same and different wafer runs we have samples from 2 different wafer runs we need tohavesamplesfromfewmorewaferruns Related Aims Spread awareness of criticalities involving semiconductor processes Importance of reliability repeatability availability along with noise gain power consumption Demonstrate the reliability of the process HEMT measurements Demonstrate capability and suitability of TQP13N for SKAlow and SKAmid 3. Capability of TQP13N for other bands Possibility of using TQP13N for other projects May211 May 211, PAFSKA211 2
21 Thank You May211 May 211, PAFSKA211 21
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