SEMICONDUCTOR. 500 mw DO-35 GLASS MOTOROLA TECHNICAL DATA BZX79C2V4RL SERIES GLASS ZENER DIODES 500 MILLIWATTS VOLTS

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1 MOTOROLA SEMICONDUCTOR TECHNICAL DATA 0 mw DO-3 Glass Zener Voltage Regulator Diodes GENERAL DATA APPLICABLE TO ALL SERIES IN THIS GROUP 0 Milliwatt Hermetically Sealed Glass Silicon Zener Diodes Specification Features: Complete Voltage Range.8 to 0 Volts DO-4AH Package Smaller than Conventional DO-4AA Package Double Slug Type Construction Metallurgically Bonded Construction Mechanical Characteristics: CASE: Double slug type, hermetically sealed glass MAXIMUM LEAD TEMPERATURE FOR SOLDERING PURPOSES: 30 C, /6 from case for seconds FINISH: All external surfaces are corrosion resistant with readily solderable leads POLARITY: Cathode indicated by color band. When operated in zener mode, cathode will be positive with respect to anode MOUNTING POSITION: Any WAFER FAB LOCATION: Phoenix, Arizona ASSEMBLY/TEST LOCATION: Seoul, Korea BZX79CV4RL SERIES 0 mw DO-3 GLASS GLASS ZENER DIODES 0 MILLIWATTS.8 0 VOLTS CASE 99 DO-4AH GLASS MAXIMUM RATINGS (Motorola Devices)* Rating Symbol Value Unit DC Power Dissipation and TL 7 C Lead Length = 3/8 Derate above TL = 7 C Operating and Storage Temperature Range TJ, Tstg 6 to +0 C * Some part number series have lower JEDEC registered ratings. PD 0 4 mw mw/ C P D, MAXIMUM POWER DISSIPATION (WATTS) HEAT SINKS 3/8 3/ TL, LEAD TEMPERATURE ( C) Figure. Steady State Power Derating 0 mw DO-3 Glass Data Sheet 6-

2 GENERAL DATA 0 mw DO-3 GLASS *ELECTRICAL CHARACTERISTICS (TL = 30 C unless otherwise noted.) (VF =. Volts IF = 0 madc for all types.) Zener Voltage Device Type (Note ) Min Max (Note ) (Note 4) IZT = (ma) Impedance IZT f = 00 Hz Max (Note 3) Leakage Current (µa) Max Temp. Coefficient (Typical) (mv/ (Volt) Min Max Capacitance (Typical) (pf) VR = 0, f =.0 MHz BZX79CV4RL BZX79C3V3RL BZX79C3V6RL BZX79C3V9RL BZX79C4V7RL BZX79CVRL BZX79CV6RL BZX79C6VRL BZX79C6V8RL BZX79C7VRL BZX79C8VRL BZX79CRL BZX79CRL BZX79CRL BZX79C8RL BZX79CRL BZX79C4RL BZX79C7RL BZX79C30RL BZX79C33RL NOTE. Zener voltage is measured under pulse conditions such that T J is no more than C above T A. NOTE. TOLERANCE AND VOLTAGE DESIGNATION Tolerance designation The type numbers listed have zener voltage min/max limits as shown. Device tolerances of ±% are indicated by a B instead of a C, and ±% by A. NOTE 3. Z ZT is measured by dividing the ac voltage drop across the device by the ac current applied. The specified limits are for I Z (ac) = 0. I Z (dc) with the ac frequency =.0 khz. 0 mw DO-3 Glass Data Sheet 6-

3 GENERAL DATA 0 mw DO-3 GLASS APPLICATION NOTE ZENER VOLTAGE Since the actual voltage available from a given zener diode is temperature dependent, it is necessary to determine junction temperature under any set of operating conditions in order to calculate its value. The following procedure is recommended: Lead Temperature, TL, should be determined from: TL = θlapd + TA. θla is the lead-to-ambient thermal resistance ( C/W) and PD is the power dissipation. The value for θla will vary and depends on the device mounting method. θla is generally 30 to 40 C/W for the various clips and tie points in common use and for printed circuit board wiring. The temperature of the lead can also be measured using a thermocouple placed on the lead as close as possible to the tie point. The thermal mass connected to the tie point is normally large enough so that it will not significantly respond to heat surges generated in the diode as a result of pulsed operation once steady-state conditions are achieved. Using the measured value of TL, the junction temperature may be determined by: TJ = TL + TJL. TJL is the increase in junction temperature above the lead temperature and may be found from Figure for dc power: TJL = θjlpd. For worst-case design, using expected limits of IZ, limits of PD and the extremes of TJ( TJ) may be estimated. Changes in voltage, VZ, can then be found from: V = θvztj. θvz, the zener voltage temperature coefficient, is found from Figures 4 and. Under high power-pulse operation, the zener voltage will vary with time and may also be affected significantly by the zener resistance. For best regulation, keep current excursions as low as possible. Surge limitations are given in Figure 7. They are lower than would be expected by considering only junction temperature, as current crowding effects cause temperatures to be extremely high in small spots, resulting in device degradation should the limits of Figure 7 be exceeded. JL, JUNCTION-TO-LEAD THERMAL RESISTANCE ( C/W) θ I R, LEAKAGE CURRENT ( µ A) V 6 0 V L, LEAD LENGTH TO HEAT SINK (INCH) Figure. Typical Thermal Resistance TYPICAL LEAKAGE CURRENT AT 80% OF NOMINAL BREAKDOWN VOLTAGE L L + C C VZ, NOMINAL ZENER VOLTAGE (VOLTS) Figure 3. Typical Leakage Current 0 mw DO-3 Glass Data Sheet 6-3

4 GENERAL DATA 0 mw DO-3 GLASS θvz, TEMPERATURE COEFFICIENT (mv/ C) θvz, TEMPERATURE COEFFICIENT (mv/ C) C, CAPACITANCE (pf) TEMPERATURE COEFFICIENTS ( C to + C temperature range; 90% of the units are in the ranges indicated.) RANGE (NOTE ) Figure 4a. Range for Units to Volts (NOTE ) Figure 4c. Range for Units to 0 Volts 0 V BIAS % OF VZ BIAS V BIAS TA = C 0 Figure 6a. Typical Capacitance.4 0 Volts C, CAPACITANCE (pf) θvz, TEMPERATURE COEFFICIENT (mv/ C) θvz, TEMPERATURE COEFFICIENT (mv/ C) RANGE ) Figure 4b. Range for Units to 0 Volts TA= C 0.0 ma ma NOTE: BELOW 3 VOLTS AND ABOVE 8 VOLTS NOTE: CHANGES IN ZENER CURRENT DO NOT NOTE: AFFECT TEMPERATURE COEFFICIENTS ma Figure. Effect of Zener Current 0 BIAS VOLT BIAS % OF VZ BIAS TA = C Figure 6b. Typical Capacitance 0 Volts 0 mw DO-3 Glass Data Sheet 6-4

5 GENERAL DATA 0 mw DO-3 GLASS Ppk, PEAK SURGE POWER (WATTS) % DUTY CYCLE % DUTY CYCLE % DUTY CYCLE V 9 V NONREPETITIVE.8 V V NONREPETITIVE PW, PULSE WIDTH (ms) Figure 7a. Maximum Surge Power.8 9 Volts RECTANGULAR WAVEFORM TJ = C PRIOR TO INITIAL PULSE Ppk, PEAK SURGE POWER (WATTS) PW, PULSE WIDTH (ms) RECTANGULAR WAVEFORM, TJ = C 0 0 VOLTS NONREPETITIVE Figure 7b. Maximum Surge Power DO-4AH 0 0 Volts ZZ, DYNAMIC IMPEDANCE (OHMS) VZ =.7 V 47 V 7 V 6. V TJ = C iz(rms) = 0. IZ(dc) f = 60 Hz IZ, ZENER CURRENT (ma) Figure 8. Effect of Zener Current on Zener Impedance ZZ, DYNAMIC IMPEDANCE (OHMS) IZ =ma ma ma TJ = C iz(rms) = 0. IZ(dc) f = 60 Hz I F, FORWARD CURRENT (ma) C 7 C MAXIMUM MINIMUM C 0 C VF, FORWARD VOLTAGE (VOLTS) Figure 9. Effect of Zener Voltage on Zener Impedance Figure. Typical Forward Characteristics 0 mw DO-3 Glass Data Sheet 6-

6 GENERAL DATA 0 mw DO-3 GLASS TA = I Z, ZENER CURRENT (ma) Figure. Zener Voltage versus Zener Current VZ = thru 6 Volts TA = I Z, ZENER CURRENT (ma) Figure. Zener Voltage versus Zener Current VZ = thru 30 Volts 0 mw DO-3 Glass Data Sheet 6-6

7 GENERAL DATA 0 mw DO-3 GLASS TA = I Z, ZENER CURRENT (ma) Figure 3. Zener Voltage versus Zener Current VZ = 30 thru Volts I Z, ZENER CURRENT (ma) Figure 4. Zener Voltage versus Zener Current VZ = thru Volts 0 mw DO-3 Glass Data Sheet 6-7

8 GENERAL DATA 0 mw DO-3 GLASS Zener Voltage Regulator Diodes Axial Leaded 0 mw DO-3 Glass K F B D K F A NOTES:. PACKAGE CONTOUR OPTIONAL WITHIN A AND B HEAT SLUGS, IF ANY, SHALL BE INCLUDED WITHIN THIS CYLINDER, BUT NOT SUBJECT TO THE MINIMUM LIMIT OF B.. LEAD DIAMETER NOT CONTROLLED IN ZONE F TO ALLOW FOR FLASH, LEAD FINISH BUILDUP AND MINOR IRREGULARITIES OTHER THAN HEAT SLUGS. 3. POLARITY DENOTED BY CATHODE BAND. 4. DIMENSIONING AND TOLERANCING PER ANSI Y4.M, 98. DIM A B D F K MILLIMETERS MIN MAX INCHES MIN MAX All JEDEC dimensions and notes apply. CASE 99-0 DO-4AH GLASS (Refer to Section for Surface Mount, Thermal Data and Footprint Information.) MULTIPLE PACKAGE QUANTITY (MPQ) REQUIREMENTS Package Option Type No. Suffix Tape and Reel RL, RL() MPQ (Units) K Tape and Ammo TA, TA() K NOTES:. The suffix refers to 6 mm tape spacing. NOTES:. Radial Tape and Reel may be available. Please contact your Motorola NOTES:. representative. Refer to Section for more information on Packaging Specifications. 0 mw DO-3 Glass Data Sheet 6-8