Solar Photovoltaic Cell Thermal Measurement Issues

Size: px
Start display at page:

Download "Solar Photovoltaic Cell Thermal Measurement Issues"

Transcription

1 Solar Photovoltaic Cell Thermal Measurement Issues Bernie Siegal Thermal Engineering Associates, Inc Copper Road Santa Clara, CA USA P: F: E:

2 Topics Introduction SPVC Type Diversity SPVC Equivalent Circuit SPVC Performance Limiters SPVC Temperature Characteristic Unique Power Dissipation Junction Temperature Calibration Thermal Measurement Setup Junction Cooling Charge Storage Thermal Transient Heating Curve Summary 2

3 Introduction Success of the Solar Photovoltaic Cell (SPVC) as a carbon-less source of global energy is dependent on: the amount of energy that it can generate, the efficiency of incident-to-output energy conversion, the capital investment required for SPVC installations, and the continuing output energy cost. All of these dependencies are based on the SPVC junction temperature. While much effort is being expended to address these dependencies, most of this effort is not specifically targeted to controlling the junction temperature. Thus, not much effort is being put into either the direct measurement of junction temperature or determination of the heat flow conditions from the cells to its environment. 3

4 SPVC Type Diversity SJ units typically subjected to 110 Suns MJ units typically subjected to Suns 4

5 SPVC Maximum Conversion Maximum theoretical conversion efficiency ( 30% and 68%, for SJ and MJ types, respectively) is determined by the Shockley Queisser limit that deals with the amount of photon energy that can actually be converted into electrical energy Reference: 5

6 SPVC Equivalent Circuit Single Junction SPVC Diode converts the solar energy into electricity All the resistive elements cause losses R Conductor and R Series are generally the same order of magnitude 6

7 SPVC Equivalent Circuit Diodes convert different segments of the solar energy into electricity. All the resistive elements cause losses R Conductor and R Series are generally the same order of magnitude. Multi-Junction SPVC 7

8 SPVC Performance Limiters A key measure of SPVC performance is the cells ability to convert incident solar energy (i.e., light) into electrical energy. Commercially available SPVC modules currently offer conversion efficiencies in the range of 12% and 28% from single junction and multi-junction units, respectively. Some of the most important performance limiters include: Semiconductor processing limitations Conductor series resistance Conductor shadowing Junction temperature 8

9 SPVC Performance Limiters Semiconductor processing limitations Large area junctions are more prone to wafer material defects, and/or processing defects and/or inter-cell variations Conductor series resistance Need to minimize R S to maximize deliverable energy and minimize internal heating Conductor shadowing Increasing conductor width to minimize RS will reduce incident light area Increasing conductor thickness leads to potential manufacturing issues Junction temperature 9

10 SPVC Temperature Characteristic Shown for a SJ-SPVC Conversion efficiency falls by about 20% for a T J rise of 35ºC 10

11 Unique Power Dissipation 1 Sun = 1,000W/m 2 = 0.1W/cm 2 P incident = 22.5W (150mmX150mm SJ-SPVC, 1 Sun) P incident = 62.5W (25mmX25mm MJ-SPVC, 100 Suns) P dissipation = P incident P conversion + P losses Thermal Pow er Thermal Pow er Incident Pow er Incident Pow er Power (Watts) mm X 150mm Single Junction 25mm X 25mm Multi-Junction Concentration Ratio 11

12 Junction Temperature Calibration Classic diode Electrical Test Method diode T J calibration setup, consistent with Mil-Std 750 and JEDEC JESD51 standards 12

13 13 Thermal Measurement Setup Classic diode Electrical Test Method setup, consistent with Mil-Std 750 and JEDEC JESD51 standards Ff Fi F V V V J V F K T J i J T T T H H F H J JX I V V K P T

14 Junction Cooling Junction starts to cool as soon as the power is removed. Must define when the V Ff measurement is actually made May need to correct for junction cooling 14

15 Junction Cooling Correction delta VF [mv] Junction Temperature Cooling Curve Reg Measurement Delay time (t MD) [µs] Raw t 0 is the instant the Heating Power is removed Initial region is due to nonthermal switching effects equipment switching speed limits, inductance between equipment and test sample, capacitance of test sample, etc. Linear portion on semi-log graph is due to actual junction cooling Linear portion is projected back to the Y-axis value a Actual measurement is made in linear portion value b Correction is the ratio of a / b Correction Factor CF = a/b 15

16 16 Applying Correction Factor b a V K ΔT F J J i J T T T H H F H J JX I V b a V K P T

17 Charge Storage High forward current applied to the diode junction(s) will cause charge to be stored in the diode junctions Charge must be dissipated either through recombination or reverse current in order to quickly measure V Ff Usually not too much of a problem in MJ- SPVC measurements. Usually is a problem in SJ-SPVC measurements Charge Dump is the process of reverse biasing the junction for a short time to remove the charge 17

18 Other Measurement Issues Incident light energy must be minimized during the calibration and measurement activities Typically, very high Heating Currents are required to generate sufficient ΔV F to improve signal-to-noise ratio Current crowding hot spots may occur during measurement and create hot spots These hot spots will distort measured junction temperature value Some of the applied heating power will be converted into optical energy (i.e., junctions glow during measurement 18

19 MJ-SPVC Assembly Stackup MJ-SPVC usually mounted on a heat spreader to better transfer heat into the package Each sequential bulk element in the heat flow path has an increased thermal time constant 19

20 Thermal Transient Heating Curve The difference in time constants produces a thermal transient heating curve that can be used to analyze the thermal interfaces 20

21 Summary The purpose of this presentation was to provide an overview of the issues associated with the thermal performance and thermal measurement of diode-type solar photovoltaic cells. The general measurement approach follows the procedure and circuitry for standard diodes. The specific requirements of SPVC have been mentioned to insure better thermal measurement results. The SPV industry needs a thermal measurement standard to generate comparable measurement results 21

Laser Diode Junction Temperature Measurement Alternatives: An Overview

Laser Diode Junction Temperature Measurement Alternatives: An Overview Laser Diode unction emperature Measurement Alternatives: An Overview Bernie Siegal hermal Engineering Associates, Inc. 612 National Avenue Mountain View, CA 9443-2222 65-961-59 bsiegal@thermengr.com Abstract

More information

EE Solar Cell Opreation. Y. Baghzouz Professor of Electrical Engineering

EE Solar Cell Opreation. Y. Baghzouz Professor of Electrical Engineering EE 495-695 4.2 Solar Cell Opreation Y. Baghzouz Professor of Electrical Engineering Characteristic Resistance The characteristic resistance of a solar cell is the output resistance of the solar cell at

More information

CHAPTER 3 CUK CONVERTER BASED MPPT SYSTEM USING ADAPTIVE PAO ALGORITHM

CHAPTER 3 CUK CONVERTER BASED MPPT SYSTEM USING ADAPTIVE PAO ALGORITHM 52 CHAPTER 3 CUK CONVERTER BASED MPPT SYSTEM USING ADAPTIVE PAO ALGORITHM 3.1 INTRODUCTION The power electronics interface, connected between a solar panel and a load or battery bus, is a pulse width modulated

More information

Solar Cell Parameters and Equivalent Circuit

Solar Cell Parameters and Equivalent Circuit 9 Solar Cell Parameters and Equivalent Circuit 9.1 External solar cell parameters The main parameters that are used to characterise the performance of solar cells are the peak power P max, the short-circuit

More information

Unit 2 Semiconductor Devices. Lecture_2.5 Opto-Electronic Devices

Unit 2 Semiconductor Devices. Lecture_2.5 Opto-Electronic Devices Unit 2 Semiconductor Devices Lecture_2.5 Opto-Electronic Devices Opto-electronics Opto-electronics is the study and application of electronic devices that interact with light. Electronics (electrons) Optics

More information

I D = I so e I. where: = constant T = junction temperature [K] I so = inverse saturating current I = photovoltaic current

I D = I so e I. where: = constant T = junction temperature [K] I so = inverse saturating current I = photovoltaic current H7. Photovoltaics: Solar Power I. INTRODUCTION The sun is practically an endless source of energy. Most of the energy used in the history of mankind originated from the sun (coal, petroleum, etc.). The

More information

Wallace Hall Academy. CfE Higher Physics. Unit 3 - Electricity Notes Name

Wallace Hall Academy. CfE Higher Physics. Unit 3 - Electricity Notes Name Wallace Hall Academy CfE Higher Physics Unit 3 - Electricity Notes Name 1 Electrons and Energy Alternating current and direct current Alternating current electrons flow back and forth several times per

More information

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2

= 25 C 8 = 110 C 8 = 150 C. Watts T J. = 4mA) = 0V, I C. = 4mA, T j = 25 C) = 25 C) = 100A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 G C E TYPICAL PERFORMANCE CURVES 12V APT1GN12B2 APT1GN12B2 APT1GN12B2G* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have

More information

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.

Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A. Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud

More information

Transient Voltage Suppressors (TVS) Data Sheet

Transient Voltage Suppressors (TVS) Data Sheet Transient Suppressors (TVS) Data Sheet Features For surface mounted applications in order to optimize board space Low profile package Built-in strain relief Glass passivated junction Low inductance Excellent

More information

Simulation of multi-junction compound solar cells. Copyright 2009 Crosslight Software Inc.

Simulation of multi-junction compound solar cells. Copyright 2009 Crosslight Software Inc. Simulation of multi-junction compound solar cells Copyright 2009 Crosslight Software Inc. www.crosslight.com 1 Introduction 2 Multi-junction (MJ) solar cells space (e.g. NASA Deep Space 1) & terrestrial

More information

10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell

10/14/2009. Semiconductor basics pn junction Solar cell operation Design of silicon solar cell PHOTOVOLTAICS Fundamentals PV FUNDAMENTALS Semiconductor basics pn junction Solar cell operation Design of silicon solar cell SEMICONDUCTOR BASICS Allowed energy bands Valence and conduction band Fermi

More information

15,000 Watt Transient Voltage Suppressor (TVS) Protection Device

15,000 Watt Transient Voltage Suppressor (TVS) Protection Device M1KP22A M1KP280CA(e3) Available 1,000 Watt Transient Voltage Suppressor (TVS) Protection Device DESCRIPTION This Transient Voltage Suppressor series of M1KP22A M1KP280CA offers an extended voltage range

More information

OpenStax-CNX module: m Solar Cells * Andrew R. Barron. Based on Solar Cells by Bill Wilson

OpenStax-CNX module: m Solar Cells * Andrew R. Barron. Based on Solar Cells by Bill Wilson OpenStax-CNX module: m33803 1 Solar Cells * Andrew R. Barron Based on Solar Cells by Bill Wilson This work is produced by OpenStax-CNX and licensed under the Creative Commons Attribution License 3.0 note:

More information

Solar-energy conversion and light emission in an atomic monolayer p n diode

Solar-energy conversion and light emission in an atomic monolayer p n diode Solar-energy conversion and light emission in an atomic monolayer p n diode Andreas Pospischil, Marco M. Furchi, and Thomas Mueller 1. I-V characteristic of WSe 2 p-n junction diode in the dark The Shockley

More information

Chapter 4. Impact of Dust on Solar PV Module: Experimental Analysis

Chapter 4. Impact of Dust on Solar PV Module: Experimental Analysis Chapter 4 Impact of Dust on Solar PV Module: Experimental Analysis 53 CHAPTER 4 IMPACT OF DUST ON SOLAR PV MODULE: EXPERIMENTAL ANALYSIS 4.1 INTRODUCTION: On a bright, sunny day the sun shines approximately

More information

Surface Mount Transient Voltage Suppressors (TVS)

Surface Mount Transient Voltage Suppressors (TVS) Description The 1.5SMC series is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events. Features Uni-directional

More information

Fundamentals of CMOS Image Sensors

Fundamentals of CMOS Image Sensors CHAPTER 2 Fundamentals of CMOS Image Sensors Mixed-Signal IC Design for Image Sensor 2-1 Outline Photoelectric Effect Photodetectors CMOS Image Sensor(CIS) Array Architecture CIS Peripherals Design Considerations

More information

Made of semiconducting materials: silicon, gallium arsenide, indium phosphide, gallium nitride, etc. (EE 332 stuff.)

Made of semiconducting materials: silicon, gallium arsenide, indium phosphide, gallium nitride, etc. (EE 332 stuff.) Diodes Simple two-terminal electronic devices. Made of semiconducting materials: silicon, gallium arsenide, indium phosphide, gallium nitride, etc. (EE 332 stuff.) Semiconductors are interesting because

More information

600V APT75GN60B APT75GN60BG*

600V APT75GN60B APT75GN60BG* G C E TYPICAL PERFORMANCE CURVES APT75GNB(G) V APT75GNB APT75GNBG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra

More information

2nd Asian Physics Olympiad

2nd Asian Physics Olympiad 2nd Asian Physics Olympiad TAIPEI, TAIWAN Experimental Competition Thursday, April 26, 21 Time Available : 5 hours Read This First: 1. Use only the pen provided. 2. Use only the front side of the answer

More information

Nolan Rebernick, Kyle Montgomery, and Kenneth Walz Quantifying Electroluminescence Image Data for Multijunction Solar Cells

Nolan Rebernick, Kyle Montgomery, and Kenneth Walz Quantifying Electroluminescence Image Data for Multijunction Solar Cells Nolan Rebernick, Kyle Montgomery, and Kenneth Walz Quantifying Electroluminescence Image Data for Multijunction Solar Cells Summary: This study explores developing characterization methods for multijunction

More information

DC Solid State Power Controller Module

DC Solid State Power Controller Module DC Solid State Power Controller Module Description: These Solid State Power Controller (SSPC) Modules are designed to operate without any heatsink requirements. They are microcontroller-based Solid State

More information

DC Solid State Power Controller Module

DC Solid State Power Controller Module DC Solid State Power Controller Module Description: The Solid State Power Controller (SSPC) Module is a microcontroller-based Solid State Relay rated upto 25A designed to be used in Army, Air force and

More information

CHAPTER 8 The PN Junction Diode

CHAPTER 8 The PN Junction Diode CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction

More information

Chap14. Photodiode Detectors

Chap14. Photodiode Detectors Chap14. Photodiode Detectors Mohammad Ali Mansouri-Birjandi mansouri@ece.usb.ac.ir mamansouri@yahoo.com Faculty of Electrical and Computer Engineering University of Sistan and Baluchestan (USB) Design

More information

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS

EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic

More information

1500 Watt Low Clamping Factor Transient Voltage Suppressor

1500 Watt Low Clamping Factor Transient Voltage Suppressor 1N6358 1N637 or Available 1500 Watt Low Clamping Factor Transient Voltage Suppressor DESCRIPTION This Transient Voltage Suppressor (TVS) series for 1N6358 through 1N637 are JEDEC registered selections

More information

What is the highest efficiency Solar Cell?

What is the highest efficiency Solar Cell? What is the highest efficiency Solar Cell? GT CRC Roof-Mounted PV System Largest single PV structure at the time of it s construction for the 1996 Olympic games Produced more than 1 billion watt hrs. of

More information

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C)

TYPICAL PERFORMANCE CURVES = 25 C = 110 C = 175 C. Watts T J. = 4mA) = 0V, I C. = 3.2mA, T j = 25 C) = 25 C) = 200A, T j = 15V, I C = 125 C) = 25 C) TYPICAL PERFORMANCE CURVES 6V APT2GN6J APT2GN6J Utilizing the latest Field Stop and Trench Gate technologies, these IGBT's have ultra low (ON) and are ideal for low frequency applications that require

More information

HMPP-386x Series MiniPak Surface Mount RF PIN Diodes

HMPP-386x Series MiniPak Surface Mount RF PIN Diodes HMPP-86x Series MiniPak Surface Mount RF PIN Diodes Data Sheet Description/Applications These ultra-miniature products represent the blending of Avago Technologies proven semiconductor and the latest in

More information

DC Solid State Power Controller Module

DC Solid State Power Controller Module PART NUMBER: / DC Solid State Power Controller Module Description: Power Controller (SSPC) Module is designed to operate without any heat sink requirements. It is a microcontroller-based Solid State Relay

More information

Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices

Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices Universities Research Journal 2011, Vol. 4, No. 4 Investigation of Photovoltaic Properties of In:ZnO/SiO 2 /p- Si Thin Film Devices Kay Thi Soe 1, Moht Moht Than 2 and Win Win Thar 3 Abstract This study

More information

CHAPTER 8 The PN Junction Diode

CHAPTER 8 The PN Junction Diode CHAPTER 8 The PN Junction Diode Consider the process by which the potential barrier of a PN junction is lowered when a forward bias voltage is applied, so holes and electrons can flow across the junction

More information

Figure 2.1: Energy Band gap Block Diagram

Figure 2.1: Energy Band gap Block Diagram Figure 2.1: Energy Band gap Block Diagram Figure 2.2: Log Is Vs 10 3 /T Figure 2.3: Schematic Representation of a p-n Junction Diode Department of Physical Sciences, Bannari Amman Institute of Technology,

More information

Figure Responsivity (A/W) Figure E E-09.

Figure Responsivity (A/W) Figure E E-09. OSI Optoelectronics, is a leading manufacturer of fiber optic components for communication systems. The products offer range for Silicon, GaAs and InGaAs to full turnkey solutions. Photodiodes are semiconductor

More information

Applications Overview

Applications Overview Applications Overview Galvanic Cycling of Rechargeable Batteries I-V Characterization of Solar Cells and Panels Making Low Resistance Measurements Using High Current DC I-V Characterization of Transistors

More information

1393 DISPLACEMENT SENSORS

1393 DISPLACEMENT SENSORS 1393 DISPLACEMENT SENSORS INTRODUCTION While regular sensors detect the existence of objects, displacement sensors detect the amount of displacement when objects move from one position to another. Detecting

More information

DEVELOPMENT OF HYBRID SOLAR SYSTEM

DEVELOPMENT OF HYBRID SOLAR SYSTEM DEVELOPMENT OF HYBRID SOLAR SYSTEM Prepared by Muhammad Irfan shafi (19830526-T151) Md.Maidur Rahman Talukder (840707-3553) February 2013 Programme Supervisor: Björn.O.Karlsson Examiner: Taghi Karimipanah

More information

LZP-Series Highest Lumen Density Cool White Emitter LZP-00CW00

LZP-Series Highest Lumen Density Cool White Emitter LZP-00CW00 LZP-Series Highest Lumen Density Cool White Emitter LZP-00CW00 Key Features Highest luminous flux / area single LED emitter o 5500lm Cool White o 40mm² light emitting area Compact 12.0mm x 12.0mm x 6.7mm

More information

Maximum Power Point (Student Handout) (The Principles of Optimizing Photovoltaic Cell Power Output)

Maximum Power Point (Student Handout) (The Principles of Optimizing Photovoltaic Cell Power Output) Name(s): Maximum Power Point (Student Handout) (The Principles of Optimizing Photovoltaic Cell Power Output) Part 1: Investigating How a Photovoltaic (PV) System Works Take a look at the animation of a

More information

Preliminary. LedEngin, Inc. High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00. Key Features. Typical Applications.

Preliminary. LedEngin, Inc. High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00. Key Features. Typical Applications. High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00 Key Features Ultra-bright, compact 24-die, 400nm Violet LED Very high Radiant Flux density, 40 W/cm 2 Small high density foot print, 12.0mm

More information

High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00

High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00 High Radiant Flux Density 400nm Violet LED Emitter LZP-00UA00 Key Features Ultra-bright, compact 24-die, 400nm Violet LED Very high Radiant Flux density, 30 W/cm 2 Small high density foot print, 12.0mm

More information

SLD8S Series RoHS Pb e3

SLD8S Series RoHS Pb e3 SLD8S Series RoHS Pb e3 Description The SLD8S Series TVS Diode is housed in a SMTO-263 package with lead modifications. It is designed to protect sensitive electronics against lightning and inductive load

More information

CHAPTER 3 PHOTOVOLTAIC SYSTEM MODEL WITH CHARGE CONTROLLERS

CHAPTER 3 PHOTOVOLTAIC SYSTEM MODEL WITH CHARGE CONTROLLERS 34 CHAPTER 3 PHOTOVOLTAIC SYSTEM MODEL WITH CHARGE CONTROLLERS Solar photovoltaics are used for the direct conversion of solar energy into electrical energy by means of the photovoltaic effect, that is,

More information

LedEngin, Inc. LZP-Series Highest Lumen Density Neutral White Emitter LZP-00NW00. Key Features. Typical Applications. Description

LedEngin, Inc. LZP-Series Highest Lumen Density Neutral White Emitter LZP-00NW00. Key Features. Typical Applications. Description LZP-Series Highest Lumen Density Neutral White Emitter LZP-00NW00 Key Features Highest luminous flux / area single LED emitter o 4600lm Neutral white o 40mm² light emitting area Compact 12.0mm x 12.0mm

More information

Grid Connected photovoltaic system based on Chain cell converter Using Simulink

Grid Connected photovoltaic system based on Chain cell converter Using Simulink Grid Connected photovoltaic system based on Chain cell converter Using Simulink Problem statement To prove Chain cell converter performance superior when compared with the traditional Pulse width modulation

More information

ECEN 4606, UNDERGRADUATE OPTICS LAB

ECEN 4606, UNDERGRADUATE OPTICS LAB ECEN 4606, UNDERGRADUATE OPTICS LAB Lab 10: Photodetectors Original: Professor McLeod SUMMARY: In this lab, you will characterize the fundamental low-frequency characteristics of photodiodes and the circuits

More information

Introduction to Photovoltaics

Introduction to Photovoltaics Introduction to Photovoltaics PHYS 4400, Principles and Varieties of Solar Energy Instructor: Randy J. Ellingson The University of Toledo February 24, 2015 Only solar energy Of all the possible sources

More information

Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors

Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors 11th International MOS-AK Workshop (co-located with the IEDM and CMC Meetings) Silicon Valley, December 5, 2018 Impact of Basal Plane Dislocations and Ruggedness of 10 kv 4H-SiC Transistors *, A. Kumar,

More information

Digital Audio Tuner for Automotive Automotive Entertainment Systems Automotive Navigation Systems PARAMETER SYMBOL VALUE UNITS

Digital Audio Tuner for Automotive Automotive Entertainment Systems Automotive Navigation Systems PARAMETER SYMBOL VALUE UNITS HIGH POWER TVS ARRAY APPLICATIONS Digital Audio Tuner for Automotive Automotive Entertainment Systems Automotive Navigation Systems SURFACE MOUNT FEATURES Junction Passivation Optimized Design Passivated

More information

Noise Reduction Techniques. INC 336 Industrial Process Measurement Assist. Prof. Pakorn Kaewtrakulpong,, Ph.D. INC, KMUTT

Noise Reduction Techniques. INC 336 Industrial Process Measurement Assist. Prof. Pakorn Kaewtrakulpong,, Ph.D. INC, KMUTT Noise Reduction Techniques INC 336 Industrial Process Measurement Assist. Prof. Pakorn Kaewtrakulpong,, Ph.D. INC, KMUTT Intrinsic Noise Sources Thermal Noise or Johnson Noise Shot Noise Contact Noise

More information

APT50GT120B2R(G) APT50GT120LR(G)

APT50GT120B2R(G) APT50GT120LR(G) APT5GT12B2R(G) APT5GT12LR(G) 12V, 5A, (ON) = 3.2V Typical Thunderbolt IGBT The Thunderbolt IGBT is a new generation of high voltage power IGBTs. Using Non-Punch-Through Technology, the Thunderbolt IGBT

More information

Electro - Principles I

Electro - Principles I The PN Junction Diode Introduction to the PN Junction Diode Note: In this chapter we consider conventional current flow. Page 11-1 The schematic symbol for the pn junction diode the shown in Figure 1.

More information

Lec (03) Diodes and Applications

Lec (03) Diodes and Applications Lec (03) Diodes and Applications Diode Models 1 Diodes and Applications Diode Operation V-I Characteristics of a Diode Diode Models Half-Wave and Full-Wave Rectifiers Power Supply Filters and Regulators

More information

ES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS)

ES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS) SOLUTIONS ES 330 Electronics II Homework # 1 (Fall 2016 SOLUTIONS) Problem 1 (20 points) We know that a pn junction diode has an exponential I-V behavior when forward biased. The diode equation relating

More information

P6SMB Transient Voltage Suppressor Diode Series

P6SMB Transient Voltage Suppressor Diode Series P6SMB Transient Voltage Suppressor Diode Series General Information The P6SMB series is designed to protect voltage sensitive components from high voltage, high energy transients. They have excellent clamping

More information

30KP SERIES. Features. Mechanical Data. Maximum Ratings and Electrical A =25 C unless otherwise specified

30KP SERIES. Features. Mechanical Data. Maximum Ratings and Electrical A =25 C unless otherwise specified 3KP SERIES 3W TRANSIENT VOLTAGE SUPPRESSOR Pb Features Glass Passivated Die Construction 3W Peak Pulse Power Dissipation 8V 88V Standoff Voltage A B A Uni- and Versions Available Excellent Clamping Voltage

More information

Modelling and simulation of PV module for different irradiation levels Balachander. K Department of EEE, Karpagam University, Coimbatore.

Modelling and simulation of PV module for different irradiation levels Balachander. K Department of EEE, Karpagam University, Coimbatore. 6798 Available online at www.elixirpublishers.com (Elixir International Journal) Electrical Engineering Elixir Elec. Engg. 43 (2012) 6798-6802 Modelling and simulation of PV module for different irradiation

More information

Sales: Technical: Fax:

Sales: Technical: Fax: DATA SHEET Order code Manufacturer code Description 47-4344 n/a SMCJ33CA TVS DIODE BIDIRECTIONAL SMC (RC 47-4346 n/a SMCJ40CA TVS DIODE BIDIRECTIONAL SMC (RC 47-4290 n/a SMCJ5.0A TVS DIODE UNIDIRECTIONAL

More information

= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V)

= 25 C = 110 C = 150 C. Watts T J = 0V, I C. = 1mA, T j = 25 C) = 25 C) = 35A, T j = 15V, I C = 125 C) = 0V, T j = 25 C) 2 = 125 C) 2 = ±20V) V APT3GP1BDQ APT3GP1BDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. POWER MOS 7 IGBT T-Max The POWER MOS 7 IGBT is a new generation of high voltage power IGBTs. Using Punch Through Technology

More information

EDC Lecture Notes UNIT-1

EDC Lecture Notes UNIT-1 P-N Junction Diode EDC Lecture Notes Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor

More information

High Efficacy Dental Blue LED Emitter LZ1-00DB00. Key Features. Typical Applications. Description

High Efficacy Dental Blue LED Emitter LZ1-00DB00. Key Features. Typical Applications. Description High Efficacy Dental Blue LED Emitter LZ1-00DB00 Key Features High Efficacy 5W Dental Blue LED Ultra-small foot print 4.4mm x 4.4mm Surface mount ceramic package with integrated glass lens Very low Thermal

More information

TAK CHEONG. 1N4728A through 1N4764A Series. 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators. Maximum Ratings. Specification Features

TAK CHEONG. 1N4728A through 1N4764A Series. 1 Watt DO-41 Hermetically Sealed Glass Zener Voltage Regulators. Maximum Ratings. Specification Features TAK CHEONG Watt DO-4 Hermetically Sealed Glass Zener Voltage Regulators Maximum Ratings Rating Symbol Value Unit Maximum Steady State Power Dissipation @ T L C, Lead Length = 3/8 Derate Above C Operating

More information

SMP LF: Surface Mount PIN Diode for High Power Switch Applications

SMP LF: Surface Mount PIN Diode for High Power Switch Applications DATA SHEET SMP1304-085LF: Surface Mount PIN Diode for High Power Switch Applications Applications Low loss, high power switches Low distortion attenuators Features Low-thermal resistance: 35 C/W Suitable

More information

15,000 Watt Transient Voltage Suppressor (TVS) Protection Device

15,000 Watt Transient Voltage Suppressor (TVS) Protection Device Compliant 15,000 Watt Transient Voltage Suppressor (TVS) Protection Device DESCRIPTION This device clamps dangerous high-voltage short-term transients such as those produced by the secondary effects of

More information

Fundamentals of Power Semiconductor Devices

Fundamentals of Power Semiconductor Devices В. Jayant Baliga Fundamentals of Power Semiconductor Devices 4y Spri ringer Contents Preface vii Chapter 1 Introduction 1 1.1 Ideal and Typical Power Switching Waveforms 3 1.2 Ideal and Typical Power Device

More information

6600W Transient Voltage Suppressor (TVS)

6600W Transient Voltage Suppressor (TVS) Description SM8S Series TVS diodes can be used in sensitive electronics protection against voltage transients induced by inductive load switching and lighting, especially for automotive load dump protection

More information

Homework Assignment 10

Homework Assignment 10 Homework Assignment 10 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =

More information

Farr High School HIGHER PHYSICS. Unit 3 Electricity. Exam Question Booklet

Farr High School HIGHER PHYSICS. Unit 3 Electricity. Exam Question Booklet Farr High School HIGHER PHYSICS Unit 3 Electricity Exam Question Booklet 1 2 MULTIPLE CHOICE QUESTIONS 1. 3. 2. 4. 3 5. 6. 7. 4 8. 9. 5 10. 11. 6 12. 13. 14. 7 15. 16. 17. 8 18. 20. 21. 19. 9 MONITORING

More information

A4950. Full-Bridge DMOS PWM Motor Driver. Description

A4950. Full-Bridge DMOS PWM Motor Driver. Description Features and Benefits Low R DS(on) outputs Overcurrent protection (OCP) Motor short protection Motor lead short to ground protection Motor lead short to battery protection Low Power Standby mode Adjustable

More information

Transform. Isolate. Regulate

Transform. Isolate. Regulate 4707 DEY ROAD LIVERPOOL, NY 13088 PHONE: (315) 701-6751 FAX: (315) 701-6752 M.S. KENNEDY CORPORATION MSK Web Site: http://www.mskennedy.com/ DC - DC Converters MS Kennedy Corp.; Revised 9/19/2013 Application

More information

MA4P7470F-1072T. Non Magnetic MELF PIN Diode. Features. Description and Applications. Designed for Automated Assembly

MA4P7470F-1072T. Non Magnetic MELF PIN Diode. Features. Description and Applications. Designed for Automated Assembly Features Non-Magnetic Package Suitable for MRI Applications Rectangular MELF SMQ Ceramic Package Hermetically Sealed Low Rs for Low Insertion Loss Long τ L for Low Intermodulation Distortion Low Cj for

More information

Power Rectifiers for Solar Photovoltaic Applications

Power Rectifiers for Solar Photovoltaic Applications Taiwan Semiconductor is currently expanding its Solar Photvoltaic Applications porfolio. We have launched this Newsletter to provide the best possible support, explain the major differences between Blocking

More information

Photovoltaic testing for R&D, DV, and manufacturing

Photovoltaic testing for R&D, DV, and manufacturing Photovoltaic testing for R&D, DV, and manufacturing Neil Forcier Application Engineer Agilent Technologies Jim Freese President Freese Enterprises Inc. www.agilent.com/find/solarcell Page 1 Agenda Introduction

More information

High Luminous Efficacy Red LED Emitter LZ1-00R100. Key Features. Typical Applications. Description

High Luminous Efficacy Red LED Emitter LZ1-00R100. Key Features. Typical Applications. Description High Luminous Efficacy Red LED Emitter LZ1-00R100 Key Features High Luminous Efficacy 5W Red LED Ultra-small foot print 4.4mm x 4.4mm Surface mount ceramic package with integrated glass lens Very high

More information

Transient Voltage Suppression Diodes Axial Leaded 600W > P6KE series

Transient Voltage Suppression Diodes Axial Leaded 600W > P6KE series Axial Leaded 6W > P6KE series RoHS Pb Description The is designed specifically to protect sensitive electronic equipment from voltage transients induced by lightning and other transient voltage events.

More information

Characteristics Symbol Rating Unit

Characteristics Symbol Rating Unit General Description MDS1525 Single N-channel Trench MOSFET 3V, 16.9A, 1.1mΩ The MDS1525 uses advanced MagnaChip s MOSFET Technology, which provides high performance in on-state resistance, fast switching

More information

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G*

600V APT75GN60BDQ2 APT75GN60SDQ2 APT75GN60BDQ2G* APT75GN60SDQ2G* G C E TYPICAL PERFORMANCE CURVES APT7GNB_SDQ(G) V APT7GNBDQ APT7GNSDQ APT7GNBDQG* APT7GNSDQG* *G Denotes RoHS Compliant, Pb Free Terminal Finish. Utilizing the latest Field Stop and Trench Gate technologies,

More information

High Efficacy Dental Blue + UV LED Emitter LZ4-00D100. Key Features. Typical Applications. Description

High Efficacy Dental Blue + UV LED Emitter LZ4-00D100. Key Features. Typical Applications. Description High Efficacy Dental Blue + UV LED Emitter LZ4-00D100 Key Features High Efficacy 10W Dental Blue + UV LED Three Dental Blue Dice + One UV Die Individually addressable die Ultra-small foot print 7.0mm x

More information

High Luminous Efficacy Red LED Emitter LZ4-00R100. Key Features. Typical Applications. Description

High Luminous Efficacy Red LED Emitter LZ4-00R100. Key Features. Typical Applications. Description High Luminous Efficacy Red LED Emitter LZ4-00R100 Key Features High Luminous Efficacy 10W Red LED Ultra-small foot print 7.0mm x 7.0mm Surface mount ceramic package with integrated glass lens Very low

More information

Regents Physics Mr. Mellon Based on Chapter 22 and 23

Regents Physics Mr. Mellon Based on Chapter 22 and 23 Name Regents Physics Mr. Mellon Based on Chapter 22 and 23 Essential Questions What is current? How is it measured? What are the relationships for Ohm s Law? What device measures current and how is it

More information

High Luminous Flux Density Warm White LED Emitter LZC-00WW00

High Luminous Flux Density Warm White LED Emitter LZC-00WW00 High Luminous Flux Density Warm White LED Emitter LZC-00WW00 Key Features High Luminous Flux Density 12-die Warm White LED More than 40 Watt power dissipation capability Ultra-small foot print 9.0mm x

More information

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved.

Unit WorkBook 4 Level 4 ENG U19 Electrical and Electronic Principles LO4 Digital & Analogue Electronics 2018 Unicourse Ltd. All Rights Reserved. Pearson BTEC Levels 4 Higher Nationals in Engineering (RQF) Unit 19: Electrical and Electronic Principles Unit Workbook 4 in a series of 4 for this unit Learning Outcome 4 Digital & Analogue Electronics

More information

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

SMD Photovoltaic Solar Cell Protection Schottky Rectifier SS5P3S SMD Photovoltaic Solar Cell Protection Schottky Rectifier esmp Series Anode Cathode Anode PRIMARY CHARACTERISTICS I F(AV) 5 A V RRM 30 V I FSM 80 A E AS 0 mj V F at I F = 5 A 0.4 V T J max. 50 C

More information

Diodes and Applications

Diodes and Applications Diodes and Applications Diodes and Applications 2 1 Diode Operation 2 2 Voltage-Current (V-I) Characteristics 2 3 Diode Models 2 4 Half-Wave Rectifiers 2 5 Full-Wave Rectifiers 2 6 Power Supply Filters

More information

Response of GaAs Photovoltaic Converters Under Pulsed Laser Illumination

Response of GaAs Photovoltaic Converters Under Pulsed Laser Illumination Response of GaAs Photovoltaic Converters Under Pulsed Laser Illumination TIQIANG SHAN 1, XINGLIN QI 2 The Third Department Mechanical Engineering College Shijiazhuang, Hebei CHINA stq0701@163.com 1, xinling399@163.com

More information

Teccor brand Thyristors AN1001

Teccor brand Thyristors AN1001 A1001 Introduction The Thyristor family of semiconductors consists of several very useful devices. The most widely used of this family are silicon controlled rectifiers (SCRs), Triacs, SIDACs, and DIACs.

More information

SMD Photovoltaic Solar Cell Protection Schottky Rectifier

SMD Photovoltaic Solar Cell Protection Schottky Rectifier SSP4S SMD Photovoltaic Solar Cell Protection Schottky Rectifier PRIMARY CHARACTERISTICS I F(AV) A V RRM 40 V I FSM 80 A E AS 0 mj V F at I F = A 0.43 V T J max. 50 C Package Diode variations Single die

More information

JANS 2N5152U3 and JANS 2N5154U3

JANS 2N5152U3 and JANS 2N5154U3 RADIATION HARDENED NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/544 DESCRIPTION Qualified Levels: JANSM, JANSD, JANSP, JANSL, JANSR, JANSF These RHA level and silicon transistor devices are

More information

Lecture 2 p-n junction Diode characteristics. By Asst. Prof Dr. Jassim K. Hmood

Lecture 2 p-n junction Diode characteristics. By Asst. Prof Dr. Jassim K. Hmood Electronic I Lecture 2 p-n junction Diode characteristics By Asst. Prof Dr. Jassim K. Hmood THE p-n JUNCTION DIODE The pn junction diode is formed by fabrication of a p-type semiconductor region in intimate

More information

High Luminous Efficacy RGB LED Emitter LZ4-00MC00. Key Features. Typical Applications. Description

High Luminous Efficacy RGB LED Emitter LZ4-00MC00. Key Features. Typical Applications. Description High Luminous Efficacy RGB LED Emitter LZ4-MC Key Features High Luminous Efficacy 1W RGB LED Individually addressable die Unlimited color mixing Ultra-small foot print 7.mm x 7.mm Surface mount ceramic

More information

Programmable DC Solid State Power Controller Module

Programmable DC Solid State Power Controller Module Programmable DC Solid State Power Controller Module Description: These Solid State Power Controller (SSPC) modules are designed to operate without any heatsink requirements. They are microcontroller-based

More information

Novel laser power sensor improves process control

Novel laser power sensor improves process control Novel laser power sensor improves process control A dramatic technological advancement from Coherent has yielded a completely new type of fast response power detector. The high response speed is particularly

More information

1200V 50A IGBT Module

1200V 50A IGBT Module 12V 5A MG125W-XBN2MM RoHS Features High level of integration only one power semiconductor module required for the whole drive Low saturation voltage and positive temperature coefficient Fast switching

More information

Basic Electronics Important questions

Basic Electronics Important questions Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials

More information

UNIT 4 BIASING AND STABILIZATION

UNIT 4 BIASING AND STABILIZATION UNIT 4 BIASING AND STABILIZATION TRANSISTOR BIASING: To operate the transistor in the desired region, we have to apply external dec voltages of correct polarity and magnitude to the two junctions of the

More information

1 Diodes. 1.1 Diode Models Ideal Diode. ELEN 236 Diodes

1 Diodes. 1.1 Diode Models Ideal Diode. ELEN 236 Diodes ELEN 236 Diodes 1 Diodes 1.1 Diode Models 1.1.1 Ideal Diode Current through diode is zero for any voltage less than zero i.e. reverse biased case Current through diode is not limited by diode if voltage

More information

CHAPTER-2 Photo Voltaic System - An Overview

CHAPTER-2 Photo Voltaic System - An Overview CHAPTER-2 Photo Voltaic System - An Overview 15 CHAPTER-2 PHOTO VOLTAIC SYSTEM -AN OVERVIEW 2.1 Introduction With the depletion of traditional energies and the increase in pollution and greenhouse gases

More information

10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1

10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices.

More information