R&D, DESIGN WORK by the CERN MEDIPIX team MICHAEL CAMPBELL, team leader XAVI LLOPART LUKAS TLUSTOS RAFA BALLABRIGA WINNIE WONG

Size: px

Start display at page:

Download "R&D, DESIGN WORK by the CERN MEDIPIX team MICHAEL CAMPBELL, team leader XAVI LLOPART LUKAS TLUSTOS RAFA BALLABRIGA WINNIE WONG"

Bartholomew Walsh
5 years ago
Views:

1 THANKS TO R&D, DESIGN WORK by the CERN MEDIPIX team MICHAEL CAMPBELL, team leader XAVI LLOPART LUKAS TLUSTOS RAFA BALLABRIGA WINNIE WONG (+ me) & CERN-MICROELECTRONICS GROUP 8-YEAR R&D EFFORTS by MEDIPIX COLLABORATION HELP in the BEAM from RYAN FIELD, SUMMER STUDENT NCSU JOHN IDARRAGA, MONTREAL, DOMINIC GREIFFENBERG, FREIBURG 1

2 MEDIPIX2 PARTNERS - U INFN Cagliari - CEA-LIST Saclay - CERN Genève - U d'auvergne Clermont - U Erlangen - ESRF Grenoble - U Freiburg - U Glasgow - IFAE Barcelona - Mitthoegskolan - MRC-LMB Cambridge - U INFN Napoli - NIKHEF Amsterdam - U INFN Pisa - FZU CAS Prague - IEAP CTU in Prague - SSL Berkeley SPOKESMAN Michael CAMPBELL Deputy Jan VISSCHERS 2

3 SPECIAL, THICK FILM NUCLEAR EMULSION AgBr 3D, sub µm m PRECISION CHARM DECAY Emulsion Event WA59 ~ µm SUCCESSIVE IONIZING ENERGY TRANSFERS TO GRAINS MAKE LATENT IMAGE 500 µm

4 120 GeV PIONS INTERACTION in Medipix DETECTOR Si 'EMULSION' DECAY of NEUTRAL K? 1 mm 500 µm July 2006 Parallel Medipix P

5 PROGRESS in Si SENSORS DEPENDS on AVAILABLE INDUSTRIAL TECHNOLOGY 0-D SINGLE DIODE D SEGMENTED DIODE mm 1960 QUASI 2-D DOUBLE-SIDED STRIPS 1965 TRUE 2-D CCD/MOS MATRIX 1971 PIXELS MONO or HYBRID 1989 PILLARS '3D' 1998 TRUE 3-D VOXELS next step? 5

6 SILICON DETECTORS TRACKERS VERTEX DETECTORS of choice EARLIEST SYSTEMS in COLLIDERS WHICH USED READOUT CHIPS UA2 (PADs) CERN AMPLEX chip MARK II MICROSTRIPs SLAC MICROPLEX chip ~ 1989 BEGIN of PIXEL DETECTORS : STANFORD, LBL, CERN 6

7 HYBRID Si PIXEL SENSOR 1991 SENSOR MATRIX TRUE 2 - D Si CERN : CAMPBELL, HEIJNE BUMPS + READOUT ELECTRONICS 1 um SACMOS 7

8 Si TRACKER MODULES ATLAS ~2006 BARREL ENDCAP

9 ATLAS Si TRACKER : SCT BARREL END 2006

10 CMS Silicon Tracker HALF-BARREL HALF- BARREL 10

11 LHC simulated EVENT with HIGGS PARTICLE HiggsÆZ 0 Z 0 Æ m + m - m + m - VERY CLEAR EVENT (THE 4 µ) BUT EXTREMELY RARE Reconstructed tracks with pt > 25 GeV COURTESY STAN BENTVELSEN

12 LHC simulated EVENT with HIGGS PARTICLE Reconstructed tracks with pt > 25 GeV HiggsÆZ 0 Z 0 Æ m + m - m + m - VERY CLEAR EVENT (THE 4 µ) BUT EXTREMELY RARE NOT EASY TO FIND THIS IS HOW IT LOOKS EXPERIMENTALLY ALWAYS LARGE BACKROUND

13 OUTLINE EARLY TRACKING and SILICON DETECTORS FOCAL POINTS in CONTINUED PIXEL DETECTOR R&D : THIN SENSORS, INTEGRATION of FUNCTIONS, TRIGGERING RELEVANT INDUSTRIAL DEVELOPMENTS in TECHNOLOGY Si WAFER STACKING, TRUE 3D DETECTION / RECONSTRUCTION : VECTOR DETECTOR and VOXELS STUDY of THIN Si SENSORS : HYBRID ASSEMBLY with 55 um Si VECTORS, SUBMICRON PRECISION on TRAJECTORIES CONCLUSION 13

14 CMOS CHIP DESIGN IN submicron TECHNOLOGY HIGH DENSITY INTERCONNECTS Si WAFER THINNING & HANDLING 3-D STACKING CRITICAL TECHNOLOGIES MECHANICS & PACKAGING THERMAL MANAGEMENT & COOLING

15 THIN Si DETECTORS IN CMOS TECHNOLOGY : THINNING of FULL Si WAFERS BECOMES PREFERRED over SELECTIVE ETCHING of THIN AREAS 200 mm WAFERS THINNED DOWN to < 20 um with UNIFORMITY < 3 um FOR PATTERNED CMOS 300 mm WAFERS < 50um USUALLY BACKING SUBSTRATE on FRONT or REAR THIS COULD BE INTRODUCED in DETECTOR TECHNOLOGY!! $$ 15

16 ADVANTAGES THIN Si ADVANTAGES of THIN Si DETECTORS < 50 µm PRECISION along PARTICLE DIRECTION --> IF YOU KNOW WHERE THE DEVICE IS IN 3D SPACE VECTOR MEASUREMENT with 2 PLANES RADIATION HARDNESS --> LOW RESISTIVITY ~10 --> LOW RESISTIVITY ~10 "cm HIGH FIELD at LOW BIAS PRACTICAL ASPECTS TO BE SOLVED

17 THIN WAFERS and THROUGH VIA IMEC

18 WITH THIN (< 50 um ) WAFERS & THROUGH-WAFER VIA'S (CONNECTIONS) 3-D MULTILAYER STACK PACKAGING 18

19 3D STACKING TECHNOLOGY SAMSUNG at ISSCC 2007

20 SUPER ADVANCED TECHNOLOGY TSUKUBA ASET K. Takahashi et al, Microel. Rel INCREASE of FUNCTIONAL DENSITY REQUIRES 3D STRUCTURES

21 TRACK VECTOR DETECTOR 3D TECHNOLOGY * MULTILAYER ASSEMBLY Sensor Interposer CMOS CMOS Interposer Sensor PROVIDES X, Y, Q X, Q Y intersecting position + angular direction 21

22 SMALLER PIXELS / VOXELS 50 x 50 x 50 µm m SIGNALS ~ 3000 e - TOP SENSOR LAYER 50 µm PROCESSING LAYERS LOW MASS 250 µm PROCESSING BETWEEN SENSORS 2-LAYER COINCIDENCE : - CONFIRMS TRACK STUB - ELIMINATES PHOTON HIT, NOISE APPROXIMATE VECTOR BOTTOM SENSOR 50 µm ~18 ~10

23 STUDY with THIN, HYBRID DETECTOR ARRAY MEDIPIX2 and TIMEPIX SYSTEMS USE ARRAY of 55 um pixels SQUARE PIXELS, LOW NOISE EXPLOIT CHARGE DIFFUSION over PIXEL BORDERS 23

24 SETUP in H6 BEAM CERN SENSOR 45 DEGREES READOUT CHIP ACTIVE AREA SENSOR 14.08x14.08 mm 2 256x256 PIXELS BEAM AXIS H6 PERIPHERAL CHIP FUNCTIONS WIREBOND CONNECTIONS ASSEMBLY SUPPORT PCB FLAT CONNECTOR beam z (colums) USB PROCESSOR MODULE x (rows ) y (thickness) 24

25 SETUP in H6 BEAM CERN SENSOR 45 DEGREES READOUT CHIP ACTIVE AREA SENSOR 14.08x14.08 mm 2 256x256 PIXELS BEAM AXIS H6 PERIPHERAL CHIP FUNCTIONS WIREBOND CONNECTIONS ASSEMBLY SUPPORT PCB FLAT CONNECTOR beam z (colums) USB PROCESSOR MODULE x (rows ) y (thickness) 25

26 H6 120 GeV PIONS EXPOSURE 1 s mm 256 pixels PARTICLE 'TRAILS' ~ PARALLEL Parallel Medipix2 P

27 MEDIPIX2 MATRIX 27

28 BUMP BONDING Medipix2 BUMP DEPOSITION & SEM PHOTOS COURTESY MCNC-RDI DURHAM NC PITCH 55 µm HIGH RESISTIVITY Si SENSOR MATRIX CANBERRA SEMICONDUCTOR 0.25 µm CMOS CHIP CERN 2001 CAMPBELL & LLOPART 256 COLUMNS x 256 ROWS pixel 55µm x 55 µm 28

29 CMOS technology 0.25mm 6 metal layers Medipix2 PIXEL CELL LAYOUT pixel cell has ~500 transistors fi chip ~33 million transistors Static power consumption: 2.2 V Amplifier Gain: ~11 µv/ V/e - Electronic Noise: ~100 e - rms. 55 mm AMPLIFIER CONF. REGISTER LOW, HIGH COMPARATORS 55 mm DISC.LOGIC COUNTER 29

30 MEDIPIX2 PIXEL BLOCK DIAGRAM accepts positive and negative input _ different detector materials charge sensitive preamplifier with individual leakage current compensation CSA 2 discriminators with globally adjustable threshold 3-bit local fine tuning of the threshold per discriminator 1 test and 1 mask bit external shutter activates the counter 13-bit pseudo-random counter/ shift register 3 bits threshold Maskbit Polarity ClockOut Shutter X Previous Pixel Mux Input Ctest Preamp CSA Vth Low Vth High Disc1 Disc2 Double Disc logic Mux 13 bits Shift Register Testbit 3 bits threshold Maskbit Conf 8 bits configuration Test Input Next Pixel Analog Digital 30

31 LOW NOISE ELECTRONICS READOUT 31

32 LOW SIGNALS CAN BE USED SMALL PIXEL CELL 55µm x 55µm THRESHOLD TRIMMING TRIMMED THRESHOLD DISPLACED to 'LOW' VALUE 1100 e - or 4 kev in Si GENERATED by M.I.P. in ~16 µm Si IN BEAM TEST 800 e - to 1000 e - STILL TO BE CALIBRATED

33 LOW NOISE in MEDIPIX2 SMALL, SQUARE Si PIXELS 55 µm m x 55 µm x 300 µm AMPLIFIER ASYNCHRONOUS, NOISE ~ 135 e - r.m.s. BINARY RESPONSE, ADJUSTABLE THRESHOLD PRECISE, SMALL STEPS + INDIVIDUAL PIXEL TUNING LOWEST THRESHOLD ~800 e - ~3 kev SIGNAL mip in 55 µm m Si : 13.8 kev (250eV/ 3800 e - DIAGONAL CROSSING #22 --> 77.8µm 5300 e - SHUTTER >0.01 ms (250eV/µm)

34 MXR CALIBRATION STACKING MINIMUM ENERGY 3.3 kev ~ 900 e - USING FLUORESCENCE X-RAY PHOTONS 34

35 MEDIPIX Si MATRIX in H6 120 GeV/c BEAM 35

36 CHARGE COLLECTION & LATERAL DIFFUSION GROUND a DRIFT h + e V b a PARTICLE ~ MIDDLE of PIXELS TOP ROW b PARTICLE CLOSE to REAR MIDDLE ROW DIFFUSION width shown EXAGGERATED 36

37 PION INTERACTIONS

38 H6 120 GeV PIONS SHUTTER 50 ms BEAM HODOSCOPE & TARGET & DETECTOR mm 256 pixels Parallel Medipix2 P

39 H6 120 GeV PIONS SHUTTER 50 ms AMBIGUITY on TRACKS AWAY or TOWARDS mm 256 pixels Parallel Medipix2 P

40 120 GeV PIONS ALL TRAILS in SAME DIRECTION mm D RECONSTRUCTION INTERACTION 190µm behind SENSOR Parallel Medipix

41 TIMEPIX CHIP 2007 MODIFICATION of MEDIPIX2 CLOCK up to 100 MHz to EACH PIXEL ADDED MODES: ENCODING of ARRIVAL TIME of PULSE ENCODING TOTAL 'TIME OVER THRESHOLD' TIMEPIX CHIP was DESIGNED for GASEOUS TPC READOUT under DEVELOPMENT for ILC by EUDET COLLABORATION 41

TIMEPIX CELL LAYOUT DESIGNER Xavier LLOPART CERN PhD Thesis p. 107 1. PREAMPLIFIER CSA 2.

42 TIMEPIX CELL LAYOUT DESIGNER Xavier LLOPART CERN PhD Thesis p PREAMPLIFIER CSA 2. THRESHOLD, 4-BIT TUNING 3. 8-BIT CONF REGISTER 4. REF_CLK & SYNCHR LOGIC BIT COUNTER 42

43 TIMEPIX SCHEMATIC BASED on MPX2-MXR REF_CLK -> 100 MHz ADDED 43

44 TIMEPIX SIMULATIONS 100 MHz MODE : ARRIVAL TIME MODE : TOT 'TIME over THRESHOLD' 44

45 TIMEPIX + GEM in DESY e - BEAM ANALOG CHARGE TIME x 10 ns SIMULTANEOUS MIXED : TOT-MODE & ARRIVAL-TIME MODE 45

46 TIMEPIX-TOT in H6 PION BEAM TIMEPIX TOT-MODE 46

47 TIMEPIX-TOT in H6 PION BEAM INTERACTION + RECOILS NOTE + DELTA RAYS + BRAGG PEAK at END of TRAILS 47

TIMEPIX-TOT in H6 PION BEAM SAME FRAME ENLARGED, DIFFERENT FULL SCALE M.I.P. TYPICALLY DEPOSITS 200-300 ev per um 11-16.

48 TIMEPIX-TOT in H6 PION BEAM SAME FRAME ENLARGED, DIFFERENT FULL SCALE M.I.P. TYPICALLY DEPOSITS ev per um kev in PIXEL TOT RANGE (1 kev~6) 48

49 TIMEPIX-TOT in H6 PION BEAM ANOTHER INTERACTION 49

50 TIMEPIX-TOT in H6 PION BEAM 50

51 TIMEPIX-TOT in H6 PION BEAM INTERACTION with TWO ENERGETIC OUTGOING PARTICLES LARGE ENERGY DEPOSIT AROUND VERTEX SEE NEXT SLIDE 51

52 TIMEPIX-TOT in H6 PION BEAM LARGE ENERGY DEPOSIT AROUND VERTEX 10 PIXELS > PIXELS > 1000 NO CALIBRATION as YET, NON-LINEAR RESPONSE TOTAL DEPOSIT VERTEX PROBABLY >> 100 MeV 52

53 MUONS from!, K DECAY MEASUREMENTS MEDIPIX 2006 VECTORS & SUBMICRON PRECISION 53

54 H6 BEAM DECAY MUONS + BACKGROUND ELECTRONS ALPHA or NEUTRON 3 MUONS Parallel Medipix M (some dead pixels) 54

55 H6 DECAY MUONS : EFFICIENCY #1 #4 #5 TOTAL ENERGY/CHARGE in a TRAIL 3.4 MeV or ~1M e - CAN BE USED FOR TIMING/TRIGGER #6 SOME DEAD PIXELS NO EFFECT on EFFICIENCY Parallel Medipix M

56 SMALL-PIXEL CHARGE SHARING CHARGE-SHARING & SINGLE - QUANTUM PROCESSING MULTIPLE HITS for BINARY OPERATION SMALL PIXEL DIMENSIONS THICK SENSOR LOW TRESHOLD if ENERGY SPECTRAL DISTRIBUTION REDUCTION of PEAK INCREASE LOW - ENERGY TAIL 56

57 INTERMEZZO NEW CHIP ATTACKS SHARING 57

58 CHARGE SPREAD ANALOG SHARING 58

59 MEDIPIX3 PRELIMINARY SCHEMATIC IEEE NSS 2006, San Diego DESIGNER Rafael BALLABRIGA CERN 59

60 STACKING STACKING 60

61 BINARY CHARGE SHARING DOUBLE HITS EXPLOIT LOW THRESHOLD 61

62 CHARGE SHARING ~8µm h + a b a and b SHARE SIGNAL CHARGE COMPARATOR SIGNAL if > ~ 800 e - e - > 800 / 3800 e - > 20% PARTITION DIFFUSION PRODUCES DOUBLE HITS 62

63 MUON TRAILS : 'CLOSED' SEGMENTS #4 VECTOR MEASUREMENTS from 'CLOSED SEGMENTS' BOUNDED by SEQUENCES of DOUBLE HITS ROW TRANSITION POINTS Parallel Medipix M

64 HIGH RECONSTRUCTION PRECISION with MUONS TRAIL (90,212) µm 440 µm BOX DOUBLE HITS ---> PRECISE ROW TRANSITION POINTS CONSTRAIN TRAJECTORY to~ 0.05 µm (??) HOW to DEAL with SUCH DATA Parallel Medipix M

65 H6 DECAY MUONS HIGH PRECISION at OVERLAP POINTS VECTOR MEASUREMENTS ANGULAR DISTRIBUTIONS Parallel Medipix M

66 MUON VECTORS Comparison of Tilt Angles for segments of Trail #4 in frame M SEGMENT SINGLE HIT PIXELS INCL. OVERLAP TILT mradian 4 open left open right FIT on 5 pts PIXELS VECTOR MEASUREMENTS Parallel Medipix M

67 H6 MUON ANGULAR DISTRIBUTION Frequency ANGULAR DISTRIBUTION VERTICAL PLANE CONE of 15 mradians Tilt Angle Vertical Plane (mradians) Frequency ANGULAR DISTRIBUTION HORIZONTAL PLANE + and - mixed Tilt Angle Horizontal Plane CONE of > 40 mradians + wide background 67

68 MUON TRAJECTORIES RESIDUALS can be MEASURED in a SINGLE DETECTOR #4 COMPARE SEQUENCES of SINGLE HITS DOUBLE HITS Parallel Medipix M

69 (90, 212) PRECISION 8 µm DOUBLE-HIT SERIES RIGHTMOST in TRAIL 5 4 µm 69

70 SENSITIVITY for CHANGE of SEQUENCE LENGTH x DOUBLE-HIT SERIES 4 µm 1 PIXEL MORE mrad Dx 0.44 µm 1 PIXEL LESS mrad Dx µm 440 um TILT mrad z TILT on LEFT CLOSED SEGMENT Dx = 47µm on 44x55µm --> mrad 70

71 AUTO - RESIDUALS Frequency Bin!m USE MUON TRAIL SEGMENTS TO PREDICT POSITIONS in ROW OVERLAP POINTS (TAKE ALWAYS MIDDLE OF SEQUENCE) RESIDUAL DISTRIBUTION RANGE ± 2.5 µm s = 0.8 µm 71

72 APPLICATIONS? NEED THICKER STACK MAY BE THIN SHELL TECHNOLOGY DEVELOPMENT 72

73 700 µm STACKED CUBE ELECTRICAL CONNECTIONS + READOUT COMPONENTS 'EXIST' EXTENSION SENSOR CHIPS 3-D TECHNOLOGY ALREADY APPLIED at LOS ALAMOS 14 mm 14 mm 40 CHIP LAYERS SENSOR 14 mm EDGE READOUT COOLING 300 µm CHIP SHEET 25 µm 30 µm DIAMOND? COOLING and SUPPORT 73

74 SOME POTENTIAL APPLICATIONS ACTIVE Si TARGETS INTEREST BUT: EXPLOIT FIXED TARGET BEAMS in FUTURE 'CENTRAL' DETECTOR at NEUTRINO FACTORY CALORIMETER PRE-SHOWER HIGH PRECISION ENTRY SHELL PARTICLE RECOGNITION by PATTERN PARTICLE IDENTIFICATION p,p,k,e -,m NEEDS ANALOG SIGNAL --> TIMEPIX CHIP MANY SAMPLES ARE POSSIBLE 74

75 SOME POTENTIAL APPLICATIONS WHAT ABOUT SLHC TRACKERS??? INNER SHELL OF RADIALLY STACKED Si ( 3 mm thick)? COMPACT MULTI-LAYER VECTOR DETECTOR VERTEX IDENTIFIER + ASSOCIATED TRAILS HIGH PRECISION POINT CLOSE to INTERACTION TRADEOFF TO BE STUDIED : MATERIAL vs PATTERN RECOGNITION, PRECISION 75

76 INTEGRATION of MICROELECTRONICS and DETECTOR OPTIMIZATION in view of AIMS in EXPERIMENT RATE CAPABILITY TRACKING PRECISION TRIGGER SELECTIVITY RADIATION HARDNESS RELIABILITY INVESTIGATE TRADE-OFFS in NEW APPROACHES LONG-TERM DEVELOPMENT ECONOMICS NOT TRIVIAL IMPORTANT POINTS

77 CONCLUSIONS DIFFERENT APPROACH IN DETECTION LARGE REDUNDANCY RELIABLE TRACK ASSOCIATION WITH VERTEX IMAGING : REJECT ANOMALOUS PIXELS (e.g. d - rays) USE CHARGE DIFFUSION for SUBMICRON PRECISION MICROELECTRONICS OPENS NEW POSSIBILITIES USE INDUSTRIAL STANDARDS LOW NOISE ESSENTIAL ON-LINE 1st LEVEL TRIGGER PROCESSING

78 120 GeV PIONS Parallel Medipix

79 MUONS Flat 45º Medipix2 Frame Oct M152 79

80 120 GeV PIONS Parallel Medipix P

81 120 GeV PIONS Parallel Medipix

82 120 GeV PIONS Parallel Medipix

The Medipix3 Prototype, a Pixel Readout Chip Working in Single Photon Counting Mode with Improved Spectrometric Performance

26 IEEE Nuclear Science Symposium Conference Record NM1-6 The Medipix3 Prototype, a Pixel Readout Chip Working in Single Photon Counting Mode with Improved Spectrometric Performance R. Ballabriga, M. Campbell,