Optical NanoGauge / Optical MicroGauge

Transcription

1 Optical Gauge Series Optical NanoGauge / Optical MicroGauge

2 Optical NanoGauge Optical MicroGauge NEW C156 P6 C10178 P10 C11665 P18 C11011 P0 Ultrathin film measurement with high speed Extensibility model for research laboratory Embedded model in 1Box unit Thick film measurement with high speed 0.5 μm SiO 5 μm SiO 700 μm 900 μm 10 nm 0 nm 0 nm SiO SiO SiO 50 μm 100 μm 100 μm Sample thickness 100 nm 1 μm 10 μm 100 μm 1 mm Optical NanoGauge C1167 P1 C1195 P14 Microscopic type Optical NanoGauge / Optical MicroGauge C10 P16 C116 P16 Embedded model in 1Box unit Multipoint measurement Microscope type NanoGauge Microscope type MicroGauge *The refractive index of SiO is 1.5, Si is.67 in this catalog.

3 Roll-to-roll film production Example: Inline measurement settings for film coating system Optical NanoGauge C156 Optical MicroGauge C11011 Multipoint NanoGauge C1195 Coating layer Cutting, Roll-up Plastic film, Bonding layer, ITO, Wet film Let-off Drying, Curing Coating, Deposition (PVD/CVD) Measurement after drying and curing, Coated layer thickness, Total thickness Example: Inline measurement settings for PVD/CVD system Multipoint NanoGauge C1195 Reflectivity measurement Transmission measurement Chromaticity Vacuum chamber Flange Max. 15 points Transmittance measurement is available. measurement Both surface analysis Vacuum conditions - Vacuum level: 10-5 Pa - Environment temp: Less than +80 C Evaporation film (PVD/CVD) ITO, SiOx, NbO Inside/outside of vacuum chamber is isolated by vacuum flange. Inside vacuum chamber, up to 15 vacuum fibers with m max length can be installed. * Please consult us for more details. High measurement stability for focus and angular fluctuations Defocus Angular fluctuation No difficulty involved in designing a measurement system Short down time for maintenance No adjustment jig necessary Cost reduction Stability for focus Stability for angular fluctuations 700 nm SiO film measurement example 700 nm SiO film measurement example Focus dependence versus reference point: ± mm (1 mm pitch), WD of reference point: 10 mm Position Optical NanoGauge Typical thickness measuring device Variation amount (nm) - mm nm nm - mm nm nm 1-1 mm nm nm Amount of vertical movement (mm) 0 Reference point nm 70.7 nm mm nm nm - + mm nm nm Optical NanoGauge - + mm nm nm Typical thickness measuring device Angular dependence versus reference point: 0 degrees to 5 degrees, WD of reference point: 10 mm Variation amount (nm) 10 Incident angle Optical NanoGauge Typical thickness measuring device 8 0 degrees 70. nm nm Optical NanoGauge 6 degrees 70.9 nm nm Typical thickness measuring device 4 5 degrees 70.6 nm nm Incident angle (degrees) At a vertical movement of 6 mm, the Optical NanoGauge has variations below 0.1 nm, while a typical thickness measuring device exhibits variations up to 8 nm. During angular movement from 0 degrees to 5 degrees, the Optical NanoGauge has variations 0.9 nm (0.047 %) while a typical thickness measuring device exhibits variations up to 5 nm or more.

4 Example applications The Optical Gauge series can be used in each process in a variety of manufacturing settings. Touch panel A touch panel is the key factor in today's hottest digital products such as smart phones, tablets, digital cameras' liquid crystal displays, and advanced gaming systems. Although there are various detection schemes for touch panels, the resistive film manufacturing process is used here as an example to show how the Optical Gauge series is used in such a process. Glass substrate production process (Electrostatic Capacitive touch panel) Receiving substrate C11665/C11011 ITO Patterning C156/C1195/C1167 Etching C156/C1195/C1167 Neighboring circuit making Backside ITO Patterning C156/C1195/C1167 Semiconductor The Optical Gauge series is used in the various manufacturing processes of semiconductor devices in which metal wiring is more multilayered, processes are increasingly miniaturized, and lower voltage is used. This contributes to improvement in the yield and shortens the time required to start a process. Wafer production process Ingot production Cut ingot Wafer polishing Wafer oxidizing C11011 Repeat Pre-process Photoresist coating Lithography Etching Ion implantation C156/C1195/C1167 Silicon planarization C156/C1195/C1167 Oxidizing, Diffusion, Coating Cleaning Repeat C156/C1195/C1167 Secondary battery Electrode plate production Electrode coil winding The demand for secondary batteries, such as lithium ion, is rapidly increasing not only due to their use in personal computers and cell phones, but also with the development of electric vehicles and hybrid electric vehicles. The research and development of more efficient products are ongoing. The Optical Gauge series can be used in a wide range of processes in the manufacture of secondary batteries, contributing to promoting shorter tact time. Crush/mixture Coating C10178 C11011 For NIR model Drying Roll press Drying Slitter C10178 C11011 For NIR model Separator C10178 C11011 For NIR model FPD Array process Glass substrate Coating Resist coating Inspection, Repair Color filter process Color filter substrate production process Alignment film coating Rubbing The Optical Gauge series can be used in a wide range of processes in the manufacture of FPD (flat-panel display) such as liquid crystal, LED, organic EL, VFD fluorescent display tube and plasma display. Cleaning Etching C11665/C11011 C156/C1195/C1167 For transmission measurement model C10 C156/C1195/C1167 PV Crystalline silicon PV production process Silicon ingot Silicon slice Texture formation AR coat formation Electrode formation Heat sintering Solar power generation is expanding continuously as a growing industry for the reduction of greenhouse gas emissions and other features. Also, many companies are engaging in research for improving the conversion efficiency of the solar cell or modules used in power generation. The Optical Gauge series can be used in a wide range of processes in the manufacture of solar cell or modules. C11665/C11011 CIGS PV production process C156/C1195/C1167 Glass substrate Cleaning MO electrode formation Patterning Cu-Ga film formation In film formation C11665/C

5 Film Glass substrate production process Etching Neighboring circuit making Production process Heat-sealing Bonding film Inspection Coating film Plastic film Object color C156/C1195/C1167 C11665/C11011 AR coating, PET, Coating layer, PE, PMMA Coating film, Evaporation film, Functionality film, Acrylic resin, Video head Flexible printed substrate Semiconductor material Back end process Electrode formation Wafer inspection Wafer polishing Wafer dicing Wire bonding Product inspection Film on a wafer Thin film Tester Mold Stealth dicing C11011 C11665/C11011 Metal-oxide coating such as SiO, SiC, Si and TiO Nitride coating, Wet film, Resist coating Polished silicon, Optical disk, DLC, Carbon Multipoint measurement Simultaneous measurement in multiple chamber In-line, in-situ measurement of APC Assembly process Inspection process Stacking Discharge and charge Sorting Micro measurement Patterned semiconductor Patterned FPD MEMS Cell process Module process Alignment film Spacer coating spraying Seal material coating Bonding LC implantation Sealing Bonding polarizing plate Mount backlight Dynamic operating inspection Metal-oxide coating such as TiO Film with filler Resist coating, Oxide film, Nitrogen film C156/C1195/C1167 C11665/C11011 FPD and color measurement of flat panel Sealing Mapping measurement Quality control inspection Modularization Cell gap, Organic EL film, Alignment film, TFT ITO, MgO, Resist film on glass substrate Polyimide, High-functioning film and Color film for FPD In-situ measurement C156/C1195/C1167 Film formation process monitor Dry and wet etching measurement Process feed gas CIGS film formation CdS buffer layer formation Patterning Transparent electrode formation Patterning Sealing Quality control inspection Film formation process C156/C1195/C1167 C156/C1195/C1167 Process exhaust gas Metal-oxide coating such as SiO and Si 5

6 NEW Optical NanoGauge C156 New model for wider thickness range and higher speed measurement Ultrathin film measurement with high speed The Optical NanoGauge Film Thickness C156 is a non-contact film thickness measurement system utilizing spectral interferometry. The Optical Gauge series is capable of measuring the thinnest 10 nm film. Capable of a wide range of film thickness measurements from 10 nm to 100 μm, it can accommodate a wide variety of objects. Moreover, high-speed measurement up to 100 Hz is possible, enabling measurement in fastmoving lines. Measurable range 10 nm 100 μm SiO 100 nm 1 μm 10 μm 100 μm 1 mm 10 nm to 100 μm thin film high speed measurement Capable of measuring 10 nm thin films Shortening of cycle time (max. 100 Hz) Enhanced external triggers (accommodates high-speed measurement) Covers broad wavelength range (400 nm to 1100 nm) Simplified measurement is added to the software Capable of both surface analysis Precise measurement of fluctuating film Analyze optical constants (n, k) External control available Specification Type number Measurement film thickness *1 Repeatability * * Accuracy * *4 Light source Measurement wavelength Spot size * Working distance * Number of measurable layers Analysis Measurement time *5 External control function Power requirement Power consumption Fiber connector shape C nm to 100 μm 0.0 nm ±0.4 % Halogen 400 nm to 1100 nm Approx. φ1 mm 10 mm Max.10 layers FFT analysis, Fitting analysis, Optical constant analysis ms / point RS-C, Ethernet AC 100 V to 40 V, 50 Hz/60 Hz 80 VA FC *1: When converted with the refractive index of SiO = 1.5 *: deviation (tolerance) when measuring 400 nm thick SiO film *: Depending on optical system or objective lens magnification to be used *4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet *5: Continuous data acquisition time excludes analysis time 6

7 LIGHT SENSOR USB.0 Optical NanoGauge C156 USB.0 LAN1 LAN MONITOR AUDIO TRIG. IN LINE POWER LIGHT SENSOR USB.0 Optical NanoGauge C156 USB.0 LAN1 LAN MONITOR AUDIO TRIG. IN LINE POWER LIGHT SENSOR USB.0 Optical NanoGauge C156 USB.0 LAN1 LAN MONITOR AUDIO TRIG. IN LINE POWER Configuration example C156 standard system (Sample stage) C156 standard system (Mounted into customer's equipment) Optical NanoGauge C156 measurement software RS-C/Ethernet Sample Sample stage A M11698 measurement software Sample Manufacturing equipment (i.e., etching or film forming equipment) Optical NanoGauge C156 Sample stage A (Lensless type) This stage accommodates samples up to φ00 mm in diameter. Light condenser not included. Light condenser optics Macro optics A Visible light condenser lens for A A (Visible light condenser lens type) This stage accommodates samples up to φ00 mm in diameter. It comes with a visible-light condenser lens with corrected chromatic aberration. WD: approx. 5 mm Measurement spot diameter: φ1.5 mm M set of a monitor, mouse, and keyboard. FC receptacle A This receptacle is a tool for setting a fiber probe in a mount. Replacement lamp unit L This receptacle lamp unit for C156. measurement software U Analysis software for both surface. Dimensional outline (Unit: mm) Main unit (Approx. 7. kg) Two branch light guide 9±1 408±1 6± 98.5±1 D95P connector SUS-acceptable light tube φ0 φ10 FC connector Sample stage A φ1 75±1 150±1 10±1 8±1 5+0 (MAX) 7 (MIN) 10±1 80±1 5 (MIN) 18+0 (MAX) 7

8 Principle Spectral interferometry is used to measure film thickness. When light enters a thin film sample, multiple reflections occur inside the thin film. These multiple-reflection light waves boost or weaken each other along with their phase difference. The phase difference of each multiple-reflection light is determined by the light wavelength and optical path length (= distance that light moves back and forth in the thin film multiplied by the film refractive index). This phase difference allows the spectrum reflected from or transmitted through the sample to produce a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. The Optical NanoGauge utilizes spectral interferometry to analyze a target spectrum by the curve-fitting or FFT (Fast Fourier Transform) method that matches your application. Incident light Phase difference Reflected light The number of signals is increased as the film thickness becomes thick. The signal intervals in short wavelength range appears more often than those in the long wavelength range. Thin film Film Number of signal interval increased. Substrate Thick film Analysis by curve fitting For measuring less than1 μm film thickness Reflectivity (%) Interference spectrum measurement of transparent electrode (ITO film: 50 nm) Spectral reflection factor (measurable quantity) Theoretical wave pattern The analyzed film thickness is the theoretical value, which is the least RMS (Root Mean Square) value of the theoretical wave pattern and measurement reflection pattern (nm) Analysis by FFT (Fast Fourier Transform) For measuring more than 1 μm film thickness Reflectivity (%) Measurement of etalon (0 μm) (nm) Fourier transform μm Optical film thickness (μm) 8

9 Both surface analysis The analysis is performed using the film thickness measurement software U Both surface analysis for both-side-coated samples In some cases, a coating film is applied to the back side of thin film samples. If such both-side-coated samples are measured by an ordinary method, the fitting cannot be consistent as the effect of the film on the back side is not taken into account, and therefore accurate values cannot be obtained. In addition, if the thickness of the film on the back side changes, the system cannot follow the change during the measurement and this may largely affect measured values. Since the Optical Gauge is equipped with the both surface analysis function as an option, which makes it possible to measure bothside-coated samples accurately measurement of both-side-coated samples. Both-side-coated samples Coating film on the surface: first layer Coating film on the surface: second layer Board 100 μm (n=1.7) nm (n=.0) 100 nm (n=1.5) Coating film on the bottom surface 1000 nm (n=1.5) Reflectivity NEW Both side analysis (nm) analysis result Reflectivity measurement analysis result nm nm 100 nm nm 1000 nm nm (nm) Measurable wave pattern (simulation) Theoretical wave pattern Thickness of coating film not only on the surface but also on the back side is measured with high accuracy. Errors in measured values are large. *This is the result of a simulation using an analysis model. NEW Reflectivity (nm) When the thickness of the coating film on the back side is increased by 100 nm analysis result Reflectivity nm nm 100 nm nm 1100 nm nm (nm) analysis result Thickness is measured with high accuracy, even back side film thickness is changed. Measurement errors are large, and the values are inaccurate as changes in the coating film on the back side cannot be followed. *This is the result of a simulation using an analysis model. 9

10 Optical NanoGaugeC10178 Versatile standard type for basic research Extensibility model for research laboratory The Optical NanoGauge Film Thickness C10178 is a non-contact film thickness measurement system utilizing spectral interferometry. Film thickness is measured quickly with high sensitivity and high accuracy through spectral interferometry. As our photonic multichannel analyzer (PMA) is used as the detector, a variety of measurement items such as quantum yield, reflectance, transmittance and absorption can also be measured simultaneously while measuring film thickness of various optical filters, coating, etc. Measurable range 0 nm 50 μm SiO 100 nm 1 μm 10 μm 100 μm 1 mm Highly accurate and real time measurement of thin film from 0 nm to 50 μm thickness High speed and high accuracy Real time measurement Mapping function Precise measurement of fluctuating film Analyze optical constants (n, k) External control available 7 Quantum yield, reflectance, transmittance and absorption can be measured with specific accessories. Specification Type number Measurement film thickness *1 Repeatability * * Accuracy * *4 Light source Measurement wavelength Spot size * Working distance * Number of measurable layers Analysis Measurement time *5 External control function Interface Power requirement Power consumption Fiber connector shape C C (NIR model) 0 nm to 50 μm 150 nm to 50 μm 0.01 nm 0.05 nm ±0.4 % Halogen 400 nm to 1100 nm 900 nm to 1650 nm Approx. φ1 mm 10 mm Max.10 layers FFT analysis, Fitting analysis, Optical constant analysis 19 ms / point RS-C, Inter-software data transfer by PIPE or Ethernet USB.0 AC100 V to 10 V / AC00 V to 40 V, 50 Hz / 60 Hz 50 VA 0 VA φ1 sleeve shape Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. Incident light Phase difference Reflected light Film Substrate Number of signal interval increased. *1: When converted with the refractive index of SiO = 1.5 *: deviation (tolerance) when measuring 400 nm thick SiO film *: Depending on optical system or objective lens magnification to be used *4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet *5: Continuous data acquisition time excludes analysis time Thin film Thick film 10

11 PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT C1007 C1008 PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT C1007 PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT C1007 Configuration example C10178 standard system C10178 mapping system for measuring thickness distribution Photonic Multichannel Analyzer Photonic Multichannel Analyzer Mapping stage C816-1,- measurement software C measurement software Halogen light source L Sample Sample stage A Halogen light source L USB.0 / RS-C C Mapping stage C816-1, - Sample stage Measurement time: s/point Measurement area: to 140 mm square (C816-1) (4 inch to 8 inch wafer) : to 00 mm square (C816-) (4 inch to 1 inch wafer) Stage movement resolution: 0.1 mm Stage movement repeatability: ±0.01 mm A (Lensless type) This stage accommodates samples up to φ00 mm in diameter. Light condenser not included. A (Visible light condenser lens type) This stage accommodates samples up to φ00 mm in diameter. It comes with a visible-light condenser lens with corrected chromatic aberration. (For C ) WD: approx. 5 mm, Measurement spot diameter: φ1.5 mm A (IR condenser lens type) This stage accommodates samples up to φ00 mm in diameter. It comes with a condenser lens covering the UV to near infrared light range. (For C ) WD: approx. 5 mm, Measurement spot diameter: φ1.5 mm Light condenser optics Macro optics A Visible light condenser lens for A LED light source LED light source L1169 Macro optics A IR condenser lens for A : 40 nm to 70 nm C Laptop type data analyzer is available as an option. C A desktop data analysis device for mapping measured result is available. Dimensional outline (Unit: mm) Photonic Multichannel Analyzer (Approx. 5 kg) C (Extensibility model for research laboratory) 99±1 Halogen light source (Approx..6 kg) L ±1 9.7±0.5 C (NIR model) 14±1 8± 6±1 4± 9.7±0.5 *Please refer to page 7 the dimensional outline of sample stage A1019. Two branch light guide A φ ±0. φ φ18±0. 50±0. φ ±0. 50± φ φ

12 1Box Type Optical NanoGauge C1167 Integrates a light source, spectrometer and data analyzer into a compact box, ideal for mounting in customer's equipment Embedded model in 1Box unit The Optical NanoGauge C1167 is a non-contact film thickness measurement system utilizing spectral interferometry. With the integration of the light source, a spectrometer and a data analysis unit in one unit, the C1167 offers a compact configuration consisting solely of the main unit and optical fiber. Designed for compactness and space savings under the assumption that it will be built into the customer's system, the C1167 can accommodate a wide variety of objects of measurement. Furthermore, because it is reference-free, the C1167 eliminates the need for cumbersome reference measurement and can perform high-speed and high-accuracy measurement for long hours in a stable manner. Measurable range 0 nm 50 μm SiO 100 nm 1 μm 10 μm 100 μm 1 mm Highly accurate and real time measurement of thin film from 0 nm to 50 μm thickness 1 Reference-free operation Compact and space-saving High speed and high accuracy Precise measurement of fluctuating film Analyze optical constants (n, k) External control available Specification Type number Measurement film thickness *1 Repeatability * * Accuracy * *4 Light source Measurement wavelength Spot size * Working distance * Number of measurable layers Analysis Measurement time *5 External control function Power requirement Power consumption Fiber connector shape C nm to 50 μm 0.0 nm ±0.4 % LED 40 nm to 70 nm Approx. φ1 mm 10 mm Max.10 layers FFT analysis, Fitting analysis, Optical constant analysis 19 ms / point RS-C / Ethernet AC 100 V to 40 V, 50 Hz/60 Hz 70 VA FC Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. Incident light Phase difference Reflected light Film Substrate Number of signal interval increased. *1: When converted with the refractive index of SiO = 1.5 *: deviation (tolerance) when measuring 400 nm thick SiO film *: Depending on optical system or objective lens magnification to be used *4: Measurement guaranteed range listed in VLSI standard measurement warranty sheet *5: Continuous data acquisition time excludes analysis time Thin film Thick film 1

13 FIBER PROBE OPTICAL NANO GAUGE C1167 COM LAN PS MONITOR USB LINE POWER FIBER PROBE OPTICAL NANO GAUGE C1167 COM LAN PS MONITOR USB LINE POWER FIBER PROBE OPTICAL NANO GAUGE C1167 COM LAN PS MONITOR USB LINE POWER Configuration example C1167 standard system (Sample stage) C1167 standard system (Mounted into customer's equipment) Optical NanoGauge C measurement software RS-C/Ethernet Sample Sample stage A M11698 measurement software Sample Manufacturing equipment (i.e., etching or film forming equipment) Optical NanoGauge C Sample stage A (Lensless type) This stage accommodates samples up to φ00 mm in diameter. Light condenser not included. Light condenser optics Macro optics A Visible light condenser lens for A A (Visible light condenser lens type) This stage accommodates samples up to φ00 mm in diameter. It comes with a visible-light condenser lens with corrected chromatic aberration. WD: approx. 5 mm Measurement spot diameter: φ1.5 mm M set of a monitor, mouse, and keyboard. FC receptacle A This receptacle is a tool for setting a fiber probe in a mount. Dimensional outline (Unit: mm) Main unit (Approx. 6 kg) 9±1 ±1 6± 98.5±1 Light guide FC connector SUS-acceptable light tube φ7 FC connector 6 φ φ10 6 *Please refer to page 7 for the dimensional outline of sample stage A

14 Multipoint NanoGauge C1195 Multipoint measurement model for real time simultaneous measurements Multipoint measurement The Multipoint NanoGauge Film Thickness C1195 is a film thickness measurement system utilizing spectral interferometry. It is designed to measure film thickness as part of the semiconductor manufacturing process, as well as for quality control of the APC and films that are mounted on semiconductor manufacturing equipment. The C1195 performs real time multipoint measurements, and enabled simultaneous measurements in multiple chambers and multipoint measurement on the surface of a film. The C1195 can also measure the reflectance (transmittance), the color of the object, and the temporal change simultaneously with film thickness measurement. Measurable range 0 nm 100 μm SiO 100 nm 1 μm 10 μm 100 μm 1 mm Enables simultaneous measurements in multiple chambers in thin film production lines and multipoint measurements in film production lines 1 4 Simultaneous film thickness measurement up to 15 points Reference-free operation Stable long-term measurement by correction of light intensity fluctuation Alarm and warning function (pass/fail) Specification Reflectance (transmittance) and spectrum measurements High speed and high accuracy Real time measurement Precise measurement of fluctuating film Analyze optical constants (n, k) External control available 14 Type number Measurement film thickness Repeatability * *4 Accuracy *4 *5 Light source *6 Measurement wavelength Spot size *4 Working distance *4 Number of measurable layers Analysis Measurement time *7 External control function Interface Power requirement Power consumption Fiber connector shape Number of measurement points * *1 C1195-XX 0 nm to 100 μm 0.0 nm ±0.4 % Xenon 0 nm to 1000 nm Approx. φ1 mm 10 mm Max.10 layers FFT analysis, Fitting analysis 19 ms / point Ethernet USB.0 (Main unit - Computer) RS-C (Light source - Computer) AC 100 V to 40 V, 50 Hz/60 Hz Approx. 0 VA ( ch) to Approx. 450 VA (15 ch) SMA to 15 Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. Incident light Phase difference Reflected light Film Substrate Number of signal interval increased. *1: Model number suffix "-XX" indicates number of measurement points. *: When converted with the refractive index of SiO = 1.5 *: deviation (tolerance) when measuring 400 nm thick SiO film *4: Depending on optical system or objective lens magnification to be used *5: Measurement guaranteed range listed in VLSI standard measurement warranty sheet *6: Halogen light source model is C1195-XXH. *7: Continuous data acquisition time excludes analysis time Thin film Thick film

15 POWER Multipoint measurement method Concept view comparing multidetector and fiber branch method Multipoint NanoGauge Multidetector method Simultaneous measurement Light source Analyzer Typical thickness measuring device Fiber branching method Light source Analyzer Measurement time difference occurs Bifurcated fiber Multibranching fiber Measurement screen monitor Color monitor Measurement mode selection film thickness / reflectance / transmittance Monitor screen Alarm and warning can be set to appear during monitoring Warning screen Measurement value trend data Measuring data Configuration example C standard system C Laptop type data analyzer is available as an option. Light source* C Multichannel analyzer measurement software Sample SMA receptacle A This receptacle is a tool for setting a fiber probe in a mount. * Available using halogen light model. Dimensional outline (Unit: mm) Main unit (Approx. 6 kg) Light source light guide φ (50.) φ φ φ4.8 SMA connector φ8 Light source (Approx. 6.4 kg) Measurement light guide SMA connector SMA connector φ φ4.8 φ4.8 15

16 Microscope Type Optical Gauge C10/C116 Microscopic type for measuring thin film in small area Microscope type NanoGauge Microscope type MicroGauge The Optical Gauge C10 and C116 are a microscopic thickness measurement systems. Objects with irregular surfaces that would produce high level of scattered light cannot be measured at the macro level. For these types of objects, measuring a small area reduces scattered light making measurement possible. Measurable range 0 nm 50 μm 100 nm C116 SiO C10 1 μm 10 μm 100 μm 1 mm 0.5 μm SiO 700 μm 0.5 μm Si 00 μm Highly accurate and real time measurement of thin film in micro field of view through microscope 1 Thickness measurement in micro field of view High speed and high accuracy 4 Analyze optical constants (n, k) External control available Specification Type number C10-01 C116-1 Measurement Refractive index of glass: 1.5 *1 0 nm to 50 μm 0.5 μm to 700 μm film thickness Refractive index of silicon:.67 * μm to 00 μm Repeatability 0.0 nm * *4 0.1 nm Accuracy *5 *6 ±0.4 % Light source Halogen Measurement wavelength 400 nm to 1100 nm 940 nm to 1000 nm Spot size *6 φ8 μm to φ80 μm Working distance Refer to objective lens list Number of measurable layers Max.10 layers Analysis FFT analysis, Fitting analysis, Optical constant analysis External control function () RS-C / Inter-software data transfer by PIPE / Ethernet Interface USB.0 Power requirement AC100 V to 10 V / AC00 V to 40 V, 50 Hz / 60 Hz Power consumption 0 VA Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. Incident light Phase difference Reflected light Film Substrate Number of signal interval increased. *1: SiO film measurement features *: Si film measurement features *: deviation (tolerance) when measuring 400 nm thick SiO film *4: deviation when a 6 μm thick silicon film was measured *5: Measurement guaranteed range listed in VLSI standard measurement warranty sheet *6: Depending on optical system or objective lens magnification to be used Thin film Thick film 16

17 PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT C1007 Principle and advantages of microscopic system Samples which are difficult to measure with the conventional macro system, such as a wafer with irregular patterns and MEMS, can be measured with a microscopic system. Samples with irregular surfaces may not be able to be measured at the macro level due to high level of scattered light. In the micro measurement with a microscopic system, the measurement point can be narrowed down to a flat area with little scattered light, that makes measurement possible. Scattered light Scattered light Microscopic objective lens Scattered light Macro measurement Micro measurement with microscope Configuration example C10-01 microscope system Monitor Photonic Multichannel Analyzer C C Laptop type data analyzer is available as an option. Objective lens 5 to 50 Sample stage A Dimensional outline (Unit: mm) Halogen light source L C measurement software Objective lens Lens Measurement spot size NA Working distance 5 φ80 μm mm 10 φ40 μm mm 0 φ0 μm mm 50 φ8 μm mm Sample stage A (Stage moving area: 75 mm 50 mm) A (Stage moving area: 150 mm 150 mm) Photonic Multichannel Analyzer (Approx. 5 kg) C ±1 Halogen light source (Approx..6 kg) L ±1 9.7±0.5 8± Microscope unit (Approx. 15 kg) A Sample stage for A10406 () A A φ φ

18 1Box Type Optical MicroGauge C11665 An integrated built-in system capable of handling a wide variety of objects, including thin films and substrates Embedded model in 1Box unit The Optical Microgauge C11665 is non-contact film thickness measurement and is designed compact of integrating a light source, a detector and a data analysis unit in 1 box. In the semiconductor industry, the widespread use of TSV technology is making substrate thickness measurement a critical area, while the semiconductor film industry is making the bonding layers ever thinner. Advances in these fields now require high accuracy film thickness measurement in the 1 μm to 00 μm range. The C11665 works well on various types of materials from silicon substrates to thin films and easily measures thicknesses in 0.5 μm to 700 μm range often used by semiconductor and film manufacturers. Measurable range 100 nm 0.5 μm SiO 700 μm 0.5 μm Si 00 μm 1 μm 10 μm 100 μm 1 mm One unit measures a wide range of materials from thin film to silicon substrate in thickness from 0.5 μm to 700 μm 1 4 Reference-free operation Compact and space-saving High speed and high accuracy Precise measurement of fluctuating film 5 6 Analyze optical constants (n, k) External control available Specification Type number C Measurement film Refractive index of glass: 1.5 *1 0.5 μm to 700 μm thickness Refractive index of silicon:.67 * 0.5 μm to 00 μm Repeatability * *4 Accuracy *4 *5 Light source 0.1 nm ±1 % LED Measurement wavelength 940 nm to 1000 nm Spot size *4 Approx. φ1 mm Working distance *4 Number of measurable layers Analysis Measurement time *6 External control function Power requirement Power consumption Fiber connector shape 5 mm Max.10 layers FFT analysis, Fitting analysis, Optical constant analysis 19 ms/point RS-C / Ethernet AC 100 V to 40 V, 50 Hz/60 Hz 85 VA FC Spectral interferometry is used to measure film thickness. When light enters a thin film sample, the sample produces a unique spectrum that depends on the film thickness. Spectral interferometry is a technique for measuring film thickness by analyzing that particular spectrum. Incident light Phase difference Reflected light Film Substrate *1: SiO film measurement features *: Si film measurement features *: deviation when a 6 μm thick silicon film was measured *4: Depending on optical system or objective lens magnification to be used *5: At the time of the etalon measurement *6: Continuous data acquisition time excludes analysis time Number of signal interval increased. Thin film Thick film 18

19 FIBER PROBE OPTICAL MICRO GAUGE C11665 COM LAN PS MONITOR USB LINE POWER FIBER PROBE OPTICAL NANO GAUGE C11665 COM LAN PS MONITOR USB LINE POWER FIBER PROBE OPTICAL NANO GAUGE C11665 COM LAN PS MONITOR USB LINE POWER Analysis method Analysis by curve fitting For measuring less than 10 μm film thickness Interference spectrum measurement of resist film Spectral reflection factor (measurable quantity) Theoretical wave pattern The analyzed film thickness is the theoretical value, which is the least RMS (Root Mean Square) value of the theoretical wave pattern and measurement reflection pattern. Analysis by FFT (Fast Fourier Transform) Measurement of etalon (00 μm) For measuring more than 10 μm film thickness Fourier transform 00 μm Configuration example C11665 standard system (Sample stage) C11665 standard system (Mounted into customer's equipment) Optical NanoGauge C measurement software RS-C/Ethernet Sample stage A Sample M11698 measurement software Sample Manufacturing equipment (i.e., etching or film forming equipment) Optical NanoGauge C Sample stage A (Lensless type) This stage accommodates samples up to φ00 mm in diameter. Light condenser not included. M set of a monitor, mouse, and keyboard. FC receptacle A This receptacle is a tool for setting a fiber probe in a mount. Dimensional outline (Unit: mm) Main unit (Approx. 7. kg) Light guide FC connector SUS-acceptable light tube φ7 FC connector 9±1 408±1 *Please refer to page 7 the dimensional outline of sample stage A ± 98.5±1 6 φ φ

20 Optical MicroGauge C11011 High speed measurement model compatible with in-line systems, capable of measuring up to.9 mm Thick film measurement with high speed The Optical MicroGauge C11011 series is a film thickness measurement system utilizing laser interferometry. High speed measurement at 60 Hz, applicable to in-line measurement in production. In addition, an optional mapping system can measure the thickness distribution of a given specimen. The C11011 can be used in a wide range of applications, such as product manufacture process monitoring or quality control. Measurable range 5 μm 00 μm 900 μm SiO 10 μm 900 μm 100 μm 1 μm 10 μm 100 μm 1 mm Si High speed measurement of film, glass and wafer 1 Measurement of non-transparent (white color) sample by infrared photometry High speed measurement at 60 Hz Measurement of pattern-formed wafer or wafer with protective film Long working distance Mapping function External control available 0 Specification Type number Measurement film thickness Repeatability * Accuracy * Light source Spot size *4 Working distance *4 Number of measurable layers Analysis Measurement time *5 External control function Interface Power requirement Power consumption Refractive index of glass: 1.5 *1 Refractive index of silicon:.67 * C μm to 00 μm 5 μm to 900 μm 10 μm to 900 μm 10 μm to 100 μm 100 nm < 500 μm : ±0.5 μm, 500 μm : ±0.1 % 16.7 ms/point *1: SiO film measurement features *: Si film measurement features *: deviation when a 6 μm thick silicon film was measured *4: al model with 1,000 mm working distance is available. (C WL) *5: During continuous data acquisition but excludes analysis time C W Infrared LD (100 nm) φ 60 μm 155 mm One layer (Multilayer measurements are possible.) Peak detection. ms/point RS-C / PIPE USB.0 AC 100 V to AC 40 V, 50 Hz/60 Hz 50 VA Wafer Si for PV panel Semiconductor Wafer SiC coat, Si coat, Wet coat, Polished Si, Optical disk Panel FPD Cell gap, Glass thickness, DLC, High-function film Optical film Film AR coating, PET, Coating layer, Coating film, Evaporation film, Functionality film Acrylic resin, Video head

21 POWER OPTICAL MICRO GAUGE C11011 Power OPTICAL MICRO GAUGE C11011 Configuration example C , -01W standard system C , -01W mapping system for measuring thickness distribution Optical fiber Optical fiber Probe head A Wafer mapping software Probe head A Wafer mapping software Sample USB.0 USB.0 Etcher or Grinder Optical MicroGauge C , -01W RS-C / PIPE C905-0 Mapping stage C816-01,- Optical MicroGauge C , -01W USB.0 / RS-C C Principle Analysis method Use laser interferometry to measure film thickness. The probe head irradiates sample with near infrared light which reflects back from the film front surface. Some of the light transmits through the film and reflects back from the boundary on the opposite side. The controller internally processes each reflected light to detect the position where light was reflected or in other words the position on the film boundary. The controller then calculates the film thickness from the distance between the detected peaks. In-situ monitoring of thickness (during wet etching) Measurement data Thickness measurement data Thickness (μm) Time (second) Probe head Measurement of bonded wafer (multilayer) Thickness distribution of a wafer Incident light Film Substrate Reflected light from the boundary Distance between the peaks indicates film thickness Display from 70 μm to 76 μm Sample: 8-inch Si bare wafer (Protective film / after grinding process) Mapping stage C816-1, - C905-01, -11 [Desktop] For the standard system: C For the mapping system: C Measurement time: s/point Measurement area: to 140 mm square (C816-1) (4 inch to 8 inch wafer) : to 00 mm square (C816-) (4 inch to 1 inch wafer) Stage movement resolution: 0.1 mm Stage movement repeatability: ±0.01 mm C905-0, -1 [Laptop] For the standard system: C905-0 For the mapping system: C905-1 Probe head A865-0 This probe head is surface-treated to make it acid-resistant and is recommended for use while mounted in wet etching equipment. Horizontal setting optics A This optical system is designed to connect to the probe head and is useful when installing the probe head in narrow locations with little working distance. Dimensional outline (Unit: mm) Main unit (Approx. 8.5 kg) Probe head: A865-01, -0 41±1 8±1 1.5±1 5.9±1 φ19±0. φ15±0. WD=155± ± Optical fiber (4 m) φ4±0.5 1

22 Power PHOTONIC MULTI-CHANNEL ANALYZER SIGNAL INPUT C1007 Mapping Stage C816 Mapping thickness distribution of wafer and thin film Compatible with Optical NanoGauge or Optical MicroGauge The Mapping Stage C816 series is a mapping system that performs wafer and film in-plane thickness distribution measurement when combined with any one of the various Optical Gauge series. The C816 can be used for examination of in-plane uniformity of etching and grinding property and for quality control purpose. Type number Measurable range Wafer (inch) Film (mm) C to 8 < C816-4 to 1 < C to 8 < C816-4 to 1 < *For more details of the specification, please contact us. Compatible with NanoGauge / MicroGauge C C W C C Thickness distribution measurement Mapping thickness distribution of pattern-formed wafer Mapping thickness distribution of pattern-formed wafer with protective film C816-1, - (For C11011 series) C816-1, - (For C10178 series) Optical MicroGauge C ,-01W USB.0 Optical NanoGauge C , -0 Probe head A Optical fiber Wafer mapping software measurement software USB.0 Wafer Stage unit Interface (USB.0 / RS-C) Stage unit Halogen light source L Interface (USB.0 / RS-C) Specification Type number Stage movement resolution Stage movement repeatability Power requirement *1 Power consumption * Dimensional outline / Weight * *For more details of the specification, please contact us. *1: Either 100 V system or 00 V system can be selected. *: For C816-1, -1 details of the specification, please contact us. *: For C816-1, -1 details of the specification, please contact us. C816-1, -, -1, mm ±0.01 mm AC100 V to AC117 V, AC00 V to AC40 V, 50 Hz/60 Hz C816-, -: 170 VA 1 inch Stage unit for C816-, -: 940 mm(w) 595 mm(h) 750 mm(d) Approx. 8 kg

23 PLASMA PROCESS MONITOR C1046 SIGNAL INPUT Related product Multiband Plasma - process Monitor C , -0 Detect in-process plasma light emission over a wide spectrum range in real time during etching, PVD and CVD The C1046 is a monitoring system that detects wide spectrum plasma emission during the process of etching, PVD and CVD in semiconductor manufacturing. With its various analysis functions, it can be used for setting up end-point detection conditions and automatic detection of etching and cleaning, estimation of plasma species and monitoring (plasma) contamination and abnormal discharges. C1046 standard system Multiband plasma-process monitor C , -0 1 Simultaneous measurement of wide spectrum Real time plasma (emission) measurement Easy measurement using optical fiber Benefits Easy parameter evaluation to detect etching and cleaning endpoint Optimal condition (or trigger) used for defining endpoint can be set for individual process by analyzing and simulating the timing at which etching and cleaning end. Automatic detection of etching and cleaning endpoint Boosts the process throughput and reduces device damage by automatically detecting the endpoint for each ware by utilizing endpoint detection condition optimized for each process. Estimation of plasma species during process Plasma spectrum library allows estimation of plasma species in a process. Optical fiber probe USB.0 Data acquisition software U9046 Type number C C range accuracy resolution (FWHM) 00 nm to 950 nm ± 0.75 nm < nm 00 nm to 800 nm ±1.0 nm < nm Power requirement AC 100 V to AC 40 V, 50 Hz / 60 Hz Power consumption Approx. 70 VA Approx. 50 VA Digital output terminal (Determinate signal output) Digital input terminal (Starting measurement trigger signal) Digital output terminal (Busy signal) Analog output terminal Fiber probe Interface TTL maximum 5 channel TTL 1 channel Using TTL 5 channel TTL 1 channel Using TTL 4 channel channel, 0 V to 10 V SMA USB.0 Type B

24 Product and software package names noted in this documentation are trademarks or registered trademarks of their respective manufacturers. Subject to local technical requirements and regulations, availability of products included in this promotional material may vary. Please consult your local sales representative. Information furnished by HAMAMATSU is believed to be reliable. However, no responsibility is assumed for possible inaccuracies or omissions. Specifications and external appearance are subject to change without notice. 014 Hamamatsu Photonics K.K. HAMAMATSU PHOTONICS K.K. HAMAMATSU PHOTONICS K.K., Systems Division 81 Joko-cho, Higashi-ku, Hamamatsu City, , Japan, Telephone: (81) , Fax: (81) , U.S.A.: Hamamatsu Corporation: 60 Foothill Road, Bridgewater. N.J , U.S.A., Telephone: (1) , Fax: (1) Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D-811 Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, 9188 Massy Cedex, France, Telephone: () , Fax: () infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan 5 SE Kista, Sweden, Telephone: (46) , Fax: (46) info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, 000 Arese (Milano), Italy, Telephone: (9) , Fax: (9) info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B101 Jiaming Center, No.7 Dongsanhuan Beilu, Chaoyang District, Beijing 10000, China, Telephone: (86) , Fax: (86) hpc@hamamatsu.com.cn Cat. No. SSMS004E05 MAR/014 HPK Created in Japan