Enhanced near infrared sensitivity: QE=40% (λ=1000 nm)

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1 IR-enhanced CCD image sensors Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) The is a family of FFT-CCD image sensors for photometric applications that offer improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Forming a MEMS structure on the back side of the CCD allows the to have much higher sensitivity than our previous products (S series). In addition to having high infrared sensitivity, the can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The has a pixel size of µm and is available in two image areas of (H) () mm ( pixels) and (H) () mm ( pixels). The is pin compatible with the S series, and so operates under the same drive conditions. Features Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) High CCD node sensitivity: 6.5 μ/e- High full well capacity and wide dynamic range (with anti-blooming function) Pixel size: μm MPP operation Applications Raman spectrometers, etc. Spectral response (without window)* (Typ. Ta=25 C) Quantum efficiency (%) Previous type (S series) 10 Front-illuminated CCD Wavelength (nm) KMPDB0324EC *1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. 1

2 Structure Parameter S S Pixel size (H ) µm Number of total pixels (H ) Number of effective pixels (H ) Image size (H ) mm mm ertical clock phase 2-phase Horizontal clock phase 4-phase Output circuit One-stage MOSFET source follower Package 24-pin ceramic DIP (refer to dimensional outline) Window Quartz glass* 2 Coooling Non-cooled *2: Resin sealing Absolute maximum ratings (Ta=25 C) Operating temperature* 3 Topr C Storage temperature Tstg C Output transistor drain voltage OD Reset drain voltage RD Over flow drain voltage OFD ertical input source voltage IS Horizontal input source voltage ISH Over flow gate voltage OFG ertical input gate voltage IG1, IG Horizontal input gate voltage IG1H, IG2H Summing gate voltage SG Output gate voltage OG Reset gate voltage RG Transfer gate voltage TG ertical shift register clock voltage P1, P Horizontal shift register clock voltage P1H, P2H P3H, P4H *3: Package temperature Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. Operating conditions (MPP mode, Ta=25 C) Output transistor drain voltage OD Reset drain voltage RD Over flow drain voltage OFD Over flow gate voltage OFG Output gate voltage OG Substrate voltage SS Input source IS, ISH - RD - Test point ertical input gate IG1, IG Horizontal input gate IG1H, IG2H ertical shift register clock voltage High P1H,P2H Low P1L, P2L Horizontal shift register clock voltage High P1HH, P2HH P3HH, P4HH Low P1HL, P2HL P3HL, P4HL Summing gate voltage High SGH Low SGL Reset gate voltage High RGH Low RGL Transfer gate voltage High TGH Low TGL External load resistance RL kω 2

3 Electrical characteristics (Ta=25 C) Signal output frequency fc MHz ertical shift register CP1, CP2 capacitance pf Horizontal shift register CP1H, CP2H capacitance CP3H, CP4H pf Summing gate capacitance CSG pf Reset gate capacitance CRG pf Transfer gate capacitance CTG pf Charge transfer efficiency* 4 CTE DC output level out Output impedance Zo kω Power consumption* 5 P mw *4: Charge transfer efficiency per pixel, measured at half of the full well capacity *5: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Saturation output voltage sat - Fw Sv - Full well capacity ertical Fw Horizontal ke - CCD node sensitivity Sv µ/e - Dark current* 6 DS e - /pixel/s Readout noise* 7 Nr e - rms Dynamic range* 8 Line binning Drange Spectral response range λ to nm Photoresponse nonuniformity* 9 PRNU - ±3 ±10 % *6: Dark current nearly doubles for every 5 to 7 C increase in temperature. *7: Temperature: -40 C, readout frequency: 20 khz *8: Dynamic range = Full well capacity / Readout noise *9: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 660 nm) Fixed pattern noise (peak to peak) Photoresponse nonuniformity = Signal 100 [% 3

4 Dark current vs. temperature Spectral transmittance characteristic of window material 1000 (Typ.) 100 (Typ. Ta=25 C) Dark current (e-/pixel/s) 10 1 Transmittance (%) Temperature ( C) Wavelength (nm) KMPDB0304EB KMPDB0303EB Device structure (conceptual drawing of top view in dimensional outline) Effective pixels Thinning Effective pixels Thinning Horizontal shift register bevel 2-bevel 2 n signal output =64 H=1024, Horizontal shift register 4 blank pixels 2 n signal output 4 blank pixels 6-bevel 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0365EB 4

5 Timing chart (line binning) Integration time ertical binning period Readout period (shutter has to be open) (shutter has to be closed) (shutter has to be closed) P1 Tpwv (bevel) Tovr P2, TG P1H Tpwh, Tpws Tovrh : S : S P2H P3H P4H, SG Tpwr RG OS D1 D2 D19 D20 D3...D10, S1...S1024, D11...D20: S S1...S2048 : S KMPDC0355EA P1, P2, TG Pulse width* 10 Tpwv µs Rise and fall times* 10 Tprv, Tpfv ns Pulse width* 10 Tpwh ns P1H, P2H, P3H, P4H Rise and fall times* 10 Tprh, Tpfh ns Pulse overlap time Tovrh ns Duty ratio* % Pulse width* 10 Tpws ns SG Rise and fall times* 10 Tprs, Tpfs ns Pulse overlap time Tovrh ns Duty ratio* % RG Pulse width Tpwr ns Rise and fall times Tprr, Tpfr ns TG-P1H Overlap time Tovr µs *10: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 5

6 Dimensional outline (unit: mm) A 3.3 ± 0.35 Gold-plated, Alloy B Index mark ± ± ± ± ± 0.05* ± ± 0.5 Index mark 0.46 ± ± ± 0.13 Photosensitive surface 1.83 ± ± 0.18 Type no. S S Photosensitive area A B (H) () (H) () * Glass thickness (refractive index 1.5) KMPDA0265EB Pin connections Pin no. Symbol Function Remark (standard operation) 1 OS Output transistor source RL=100 kω 2 OD Output transistor drain OG Output gate +5 4 SG Summing gate Same pulse as P4H 5 SS Substrate GND 6 RD Reset drain P4H CCD horizontal register clock-4 8 P3H CCD horizontal register clock-3 9 P2H CCD horizontal register clock-2 10 P1H CCD horizontal register clock-1 11 IG2H Test point (horizontal input gate-2) IG1H Test point (horizontal input gate-1) OFG Over flow gate OFD Over flow drain ISH Test point (horizontal input source) Connect to RD 16 IS Test point (vertical input source) Connect to RD 17 SS Substrate GND 18 RD Reset drain IG2 Test point (vertical input gate-2) IG1 Test point (vertical input gate-1) P2 CCD vertical register clock-2 22 P1 CCD vertical register clock-1 23 TG Transfer gate Same pulse as P2 24 RG Reset gate 6

7 Precautions (electrostatic countermeasures) When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a protective resistor (about 1 MW) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is hazardous because you may receive an electrical shock if electric leakage occurs. Avoid directly placing these sensors on a work bench that may carry an electrostatic charge. Provide ground lines with the work bench and work floor to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Related information Precautions Disclaimer Image sensors Technical information FFT-CCD area image sensor Driver circuit for CCD image sensor () C11287 [sold separately] The C11287 is a driver circuit designed for HAMAMATSU CCD image sensors. The C11287 can be used in spectrometers, etc. when combined with the CCD image sensor. Features Built-in 14-bit A/D converter Interface to computer: USB 2.0 Power supply: USB bus power operation Information described in this material is current as of December Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) , usa@hamamatsu.com Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) , info@hamamatsu.de France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) , infos@hamamatsu.fr United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) , info@hamamatsu.co.uk North Europe: Hamamatsu Photonics Norden AB: Torshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) , info@hamamatsu.se Italy: Hamamatsu Photonics Italia S.r.l.: Strada della Moia, 1 int. 6, Arese (Milano), Italy, Telephone: (39) , Fax: (39) , info@hamamatsu.it China: Hamamatsu Photonics (China) Co., Ltd.: B1201, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) , hpc@hamamatsu.com.cn Taiwan: Hamamatsu Photonics Taiwan Co., Ltd.: 8F-3, No. 158, Section2, Gongdao 5th Road, East District, Hsinchu, 300, Taiwan R.O.C. Telephone: (886) , Fax: (886) , info@hamamatsu.com.tw Cat. No. KMPD1126E08 Dec DN 7

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