CCD area image sensor

Transcription

1 IR-enhanced CCD area image sensor S Enhanced near infrared sensitivity: QE=40% (λ=1000 nm), back-thinned FFT-CCD The S is an FFT-CCD image sensor for photometric applications that offers improved sensitivity in the near infrared region at wavelengths longer than 800 nm. Our unique technology in laser processing was used to form a MEMS structure on the back side of the CCD. This allows the S to have much higher sensitivity than our previous product (S ). In addition to having high near infrared sensitivity, the S can be used as an image sensor with a long active area in the direction of the sensor height by binning operation, making it suitable for detectors in Raman spectroscopy. Binning operation also ensures even higher S/N and signal processing speed compared to methods that use an external circuit to add signals digitally. The S has a pixel size of μm and image size of (H) () mm ( pixels). The S is pin compatible with the S , and so operates under the same drive conditions. Features Enhanced near infrared sensitivity: QE=40% (λ=1000 nm) Pixel size: μm Line, pixel binning Wide spectral response range Low readout noise Wide dynamic range MPP operation Applications Raman spectrometer, etc. Spectral response (without window)* (Typ. Ta=25 C) S Quantum efficiency (%) Previous type (S ) 10 Front-illuminated CCD Wavelength (nm) *1: Spectral response with quartz glass is decreased according to the spectral transmittance characteristic of window material. KMPDB0325EC 1

2 Structure Parameter Specification Pixel size (H ) μm Number of total pixels (H ) Number of effective pixels (H ) Image size (H ) mm ertical clock phase 2-phase Horizontal clock phase 2-phase Output circuit One-stage MOSFET source follower Package 24-pin ceramic DIP (refer to dimensional outline) Window Quartz glass* 2 Cooling Non-cooled *2: Resin sealing Absolute maximum ratings Operating temperature* 3 Topr C Storage temperature Tstg C Output transistor drain voltage OD Reset drain voltage RD ertical input source voltage IS Horizontal input source voltage ISH ertical input gate voltage IG1, IG Horizontal input gate voltage IG1H, IG2H Summing gate voltage SG Output gate voltage OG Reset gate voltage RG Transfer gate voltage TG ertical shift register clock voltage P1, P Horizontal shift register clock voltage P1H, P2H Note: Exceeding the absolute maximum ratings even momentarily may cause a drop in product quality. Always be sure to use the product within the absolute maximum ratings. *3: Package temperature Operating conditions (MPP mode, Ta=25 C) Output transistor drain voltage OD Reset drain voltage RD Output gate voltage OG Substrate voltage SS ertical input source IS - RD - Test point Horizontal input source ISH - RD - ertical input gate IG1, IG Horizontal input gate IG1H, IG2H ertical shift register High P1H, P2H clock voltage Low P1L, P2L Horizontal shift register High P1HH, P2HH clock voltage Low P1HL, P2HL Summing gate voltage High SGH Low SGL Reset gate voltage High RGH Low RGL Transfer gate voltage High TGH Low TGL External load resistance RL kω 2

3 Electrical characteristics (Ta=25 C) Signal output frequency fc MHz ertical shift register capacitance CP1, CP pf Horizontal shift register capacitance CP1H, CP2H pf Summing gate capacitance CSG pf Reset gate capacitance CRG pf Transfer gate capacitance CTG pf Charge transfer efficiency* 4 CTE DC output level out Output impedance Zo kω Power consumption* 5 P mw *4: Charge transfer efficiency per pixel, measured at half of the full well capacity *5: Power consumption of the on-chip amplifier plus load resistance Electrical and optical characteristics (Ta=25 C, unless otherwise noted) Saturation output voltage sat - Fw Sv - Full well capacity ertical Fw Horizontal* ke - CCD node sensitivity Sv μ/e - Dark current* 7 25 C DS (MPP mode) 0 C e - /pixel/s Readout noise* 8 Nr e - rms Dynamic range* 9 Line binning DR Area scanning Photoresponse nonuniformity* 10 PRNU - ±3 ±10 % Spectral response range λ to nm Point defect* 11 White spots Black spots Blemish - Cluster defect* Column defect* *6: The linearity is ±1.5 %. *7: Dark current nearly doubles for every 5 to 7 C increase in temperature. *8: Measured with a HAMAMATSU C4880 digital CCD camera with a CDS circuit (sensor temperature: -40 C, operating frequency: 150 khz) *9: Dynamic range = Full well capacity / Readout noise *10: Measured at one-half of the saturation output (full well capacity) using LED light (peak emission wavelength: 560 nm) Fixed pattern noise (peak to peak) Photoresponse nonuniformity = 100 [%] Signal *11: White spots Pixels whose dark current is higher than 1 ke - after one-second integration at 0 C. Black spots Pixels whose sensitivity is lower than one-half of the average pixel output. (measured with uniform light producing one-half of the saturation charge) *12: 2 to 9 contiguous defective pixels *13: 10 or more contiguous defective pixels 3

4 Dark current vs. temperature Spectral transmittance characteristic 1000 (Typ.) 100 (Typ. Ta=25 C) Dark current (e - /pixel/s) 10 1 Transmittance (%) Temperature ( C) Wavelength (nm) KMPDB0256EA KMPDB0303EA Device structure (conceptual drawing of top view) Thinning Effective pixels Effective pixels bevel Thinning H 4-bevel signal out 2 n Horizontal shift register 11 =122 H= blank pixels 2 n signal out 4 blank pixels Horizontal shift register 6-bevel 6-bevel Note: When viewed from the direction of the incident light, the horizontal shift register is covered with a thick silicon layer (dead layer). However, long-wavelength light passes through the silicon dead layer and may possibly be detected by the horizontal shift register. To prevent this, provide light shield on that area as needed. KMPDC0364EB 4

5 Timing chart (line binning) P1 Integration time (shutter has to open) Tpwv 1 2 ertical binning period (shutter has to closed) (bevel) Tovr Readout period (shutter has to closed) P2, TG P1H Tpwh, Tpws P2H, SG RG Tpwr OS D1 D2..D10, S1..S1024, D11..D19 D20 KMPDC0353EB P1, P2, TG* 14 Pulse width Tpwv μs Rise and fall times Tprv, Tpfv ns P1H, P2H* 14 Rise and fall times Tprh, Tpfh ns Pulse width Tpwh ns Duty ratio % Pulse width Tpws ns SG Rise and fall times Tprs, Tpfs ns Duty ratio % RG Pulse width Tpwr ns Rise and fall times Tprr, Tpfr ns TG-P1H Overlap time Tovr μs *14: Symmetrical clock pulses should be overlapped at 50% of maximum pulse amplitude. 5

6 Dimensional outline (unit: mm) Window 28.6* Photosensitive area * ± ± ± ± st pin index mark Photosensitive surface ± ± ± ± 0.49 (24 ) 0.5 ± 0.05 * Size of window that guarantees the transmittance in the Spectral transmittance characteristics graph KMPDA0264EB Pin connections Pin no. Symbol Function Remark (standard operation) 1 RD Reset drain OS Output transistor source RL=22 kω 3 OD Output transistor drain OG Output gate +3 5 SG Summing gate Same pulse as P2H P2H CCD horizontal register clock-2 9 P1H CCD horizontal register clock-1 10 IG2H Test point (horizontal input gate-2) IG1H Test point (horizontal input gate-1) ISH Test point (horizontal input source) Connect to RD 13 TG* 15 Transfer gate Same pulse as P2 14 P2 CCD vertical register clock-2 15 P1 CCD vertical register clock SS Substrate (GND) GND 21 IS Test point (vertical input source) Connect to RD 22 IG2 Test point (vertical input gate-2) IG1 Test point (vertical input gate-1) RG Reset gate *15: Isolation gate between vertical register and horizontal register. In standard operation, TG should be applied the same pulse as P2. 6

7 Precautions (electrostatic countermeasures) When handling CCD sensors, always wear a wrist strap and also anti-static clothing, gloves, and shoes, etc. The wrist strap should have a protective resistor (about 1 MΩ) on the side closer to the body and be grounded properly. Using a wrist strap having no protective resistor is hazardous because you may receive an electrical shock if electric leakage occurs. Avoid directly placing these sensors on a work bench that may carry an electrostatic charge. Provide ground lines with the work bench and work floor to allow static electricity to discharge. Ground the tools used to handle these sensors, such as tweezers and soldering irons. It is not always necessary to provide all the electrostatic measures stated above. Implement these measures according to the amount of damage that occurs. Element cooling/heating temperature incline rate When cooling the CCD by an externally attached cooler, set the cooler operation so that the temperature gradient (rate of temperature change) for cooling or allowing the CCD to warm back is less than 5 K/minute. Related information Precautions Notice Image sensors/precautions Technical information FFT-CCD area image sensor/technical information Multichannel detector head C7040 Features Area scanning or line-binnng operation Readout frequency: 250 khz Readout noise: 20 e- rms Input Symbol Specification D1 +5 dc, 200 ma Supply voltage A dc, +100 ma A dc, -100 ma A2 +24 dc, 30 ma Master start φms HCMOS logic compatible Master clock φmc HCMOS logic compatible, 1 MHz 7

8 Multichannel detector head controller C Features For control of multichannel detector head and data acquisition Easy control and data acquisition using supplied software via USB interface Connection example Shutter* timing pulse AC cable (100 to 240 ; included with C ) Trig. Dedicated cable (included with C ) USB cable (included with C ) Image sensor + Multichannel detector head C PC [Windows 2000/XP/ista, 7 (32-bit)] (USB 2.0) * Shutter, etc. are not available. KACCC0402EC Information described in this material is current as of August, Product specifications are subject to change without prior notice due to improvements or other reasons. This document has been carefully prepared and the information contained is believed to be accurate. In rare cases, however, there may be inaccuracies such as text errors. Before using these products, always contact us for the delivery specification sheet to check the latest specifications. Type numbers of products listed in the delivery specification sheets or supplied as samples may have a suffix "(X)" which means preliminary specifications or a suffix "(Z)" which means developmental specifications. The product warranty is valid for one year after delivery and is limited to product repair or replacement for defects discovered and reported to us within that one year period. However, even if within the warranty period we accept absolutely no liability for any loss caused by natural disasters or improper product use. Copying or reprinting the contents described in this material in whole or in part is prohibited without our prior permission. HAMAMATSU PHOTONICS K.K., Solid State Division Ichino-cho, Higashi-ku, Hamamatsu City, Japan, Telephone: (81) , Fax: (81) U.S.A.: Hamamatsu Corporation: 360 Foothill Road, P.O.Box 6910, Bridgewater, N.J , U.S.A., Telephone: (1) , Fax: (1) Germany: Hamamatsu Photonics Deutschland GmbH: Arzbergerstr. 10, D Herrsching am Ammersee, Germany, Telephone: (49) , Fax: (49) France: Hamamatsu Photonics France S.A.R.L.: 19, Rue du Saule Trapu, Parc du Moulin de Massy, Massy Cedex, France, Telephone: 33-(1) , Fax: 33-(1) United Kingdom: Hamamatsu Photonics UK Limited: 2 Howard Court, 10 Tewin Road, Welwyn Garden City, Hertfordshire AL7 1BW, United Kingdom, Telephone: (44) , Fax: (44) North Europe: Hamamatsu Photonics Norden AB: Thorshamnsgatan Kista, Sweden, Telephone: (46) , Fax: (46) Italy: Hamamatsu Photonics Italia S.R.L.: Strada della Moia, 1 int. 6, Arese, (Milano), Italy, Telephone: (39) , Fax: (39) China: Hamamatsu Photonics (China) Co., Ltd.: 1201 Tower B, Jiaming Center, No.27 Dongsanhuan Beilu, Chaoyang District, Beijing , China, Telephone: (86) , Fax: (86) Cat. No. KMPD1125E05 Aug DN 8