Green Product STU/DL SamHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMRY VDSS ID RDS(ON) (mω) Max V 3 @ VGS=V FETURES Super high dense cell design for low RDS(ON). Rugged and reliable. TO-5 and TO-5 Package. G S G D S STU SERIES TO - 5(D- PK ) STD SERIES TO - 5( I - PK ) BSOLUTE MXIMUM RTINGS (T =5 C unless otherwise noted) Symbol V DS V GS I D I DM E S P D T J, T STG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b Single Pulse valanche Energy d Maximum Power Dissipation Operating Junction and Storage Temperature Range a a T C =5 C T C =7 C T C =5 C T C =7 C Limit Units V ± V 9 mj 5 W 3 W -55 to 5 C THERML CHRCTERISTICS R JC a Thermal Resistance, Junction-to-Case.5 C/W R J a Thermal Resistance, Junction-to-mbient 5 C/W Details are subject to change without notice. Dec,9,
STU/DL ELECTRICL CHRCTERISTICS (T=5 C unless otherwise noted) Symbol Parameter Conditions Min Typ Max Units OFF CHRCTERISTICS BVDSS Drain-Source Breakdown Voltage VGS=V, ID=5u V IDSS Zero Gate Voltage Drain Current VDS=V, VGS=V u IGSS Gate-Body Leakage Current VGS= ±V, VDS=V ± n ON CHRCTERISTICS VGS(th) RDS(ON) g FS Gate Threshold Voltage Drain-Source On-State Resistance Forward Transconductance VDS=VGS, ID=5u VGS=V, ID=5 VDS=V, ID=5..5 7 3 5.5 V m ohm S c DYNMIC CHRCTERISTICS CISS Input Capacitance 3 pf VDS=5V,VGS=V COSS Output Capacitance 35 pf f=.mhz CRSS Reverse Transfer Capacitance pf SWITCHING CHRCTERISTICS td(on) Turn-On Delay Time tr Rise Time td(off) tf Fall Time Qg Qgs Qgd Turn-Off Delay Time Total Gate Charge Gate-Source Charge Gate-Drain Charge c VDD=5V ID= VGS=V RGEN= 6 ohm VDS=5V,ID=5,VGS=V VDS=5V,ID=5, VGS=V 9 6.5 3.5 5.5 ns ns ns ns nc nc nc DRIN-SOURCE DIODE CHRCTERISTICS ND MXIMUM RTINGS VSD Diode Forward Voltage VGS=V,IS=.75.3 V Notes a.surface Mounted on FR4 Board,t < _ sec. b.pulse Test:Pulse Width < _ 3us, Duty Cycle < _ %. c.guaranteed by design, not subject to production testing. d.starting TJ=5 C,L=.5mH,VDD = 5V.(See Figure3) Dec,9,
STU/DL ID, Drain Current() 6 4 VGS=V VGS=6V VGS=5V VGS=4V VGS=3V ID, Drain Current() 6 4 Tj=5 C 5 C -55 C.5..5..5 3. VDS, Drain-to-Source Voltage(V) Figure. Output Characteristics..4 3.6 4. 6. 7. VGS, Gate-to-Source Voltage(V) Figure. Transfer Characteristics 36.5 RDS(on)(m Ω) 3 4 6 V GS=V RDS(on), On-Resistance Normalized..9.6.3. V GS=V ID=5 4 6 5 5 75 5 5 Tj( C ) ID, Drain Current() Tj, Junction Temperature( C ) Figure 3. On-Resistance vs. Drain Current and Gate Voltage Figure 4. On-Resistance Variation with Drain Current and Temperature Vth, Normalized Gate-Source Threshold Voltage.6.4....6.4. -5-5 5 5 75 V DS=V GS ID=5u 5 5 BVDSS, Normalized Drain-Source Breakdown Voltage.5..5..95.9.5-5 ID=5u -5 5 5 75 5 5 Tj, Junction Temperature( C ) Tj, Junction Temperature( C ) Figure 5. Gate Threshold Variation with Temperature Figure 6. Breakdown Voltage Variation with Temperature 3 Dec,9,
STU/DL 6. RDS(on)(m Ω) 5 4 3 ID=5 5 C 75 C 5 C Is, Source-drain current(). 5. 75 C 5 C 5 C 4 6 VGS, Gate-to-Source Voltage(V) Figure 7. On-Resistance vs. Gate-Source Voltage..5.5.75..5 VSD, Body Diode Forward Voltage(V) Figure. Body Diode Forward Voltage Variation with Source Current C, Capacitance(pF) 4 35 4 7 Crss Coss Ciss 5 5 5 3 35 4 45 5 VGS, Gate to Source Voltage(V) 6 4 VDS=5V ID=5 3 4 5 6 7 VDS, Drain-to-Source Voltage(V) Qg, Total Gate Charge(nC) Figure 9. Capacitance Figure. Gate Charge Switching Time(ns) TD(off ) TD(on) VDS=5V,ID= VGS=V. Tf Tr ID, Drain Current() R DS(ON) Limit ms DC VGS=V Single Pulse T=5 C.. ms us Rg, Gate Resistance(Ω) VDS, Drain-Source Voltage(V) Figure. switching characteristics Figure. Maximum Safe Operating rea Dec,9, 4
STU/DL tp V(BR )DSS V DS L R G V tp D.U.T IS. + - V DD IS Unclamped Inductive Test Circuit Figure 3a. Unclamped Inductive Waveforms Figure 3b. D=.5 Normalized Transient Thermal Resistance....5... R J (t)=r (t) * R J. R J=S ee Datasheet SINGLE PULSE 3. T JM-T =PDM* R J (t) 4. Duty Cycle, D=t/t. -5-4 -3 - - P DM t t Square Wave Pulse Duration(sec) Figure 4. Normalized Thermal Transient Impedance Curve 5 Dec,9,
STU/DL PCKGE OUTLINE DIMENSIONS TO-5 E E C L D E D D H B 3 L L B D3 P B SYMBOL MILLIMETERS INCHES MIN MX MIN MX.3.9.4.6.6.3..5.35.65 B.4. B.65.5 B.5.9 C.4.6 D 5.3 5.7 D 4.9 5.3 D 6.7 7.3 D3 7.. H 3.7 5.3 E 6.3 6.7 E 4.6 4.9 E 4. 5. L.3.7 L.4. L.5.9 P.6.4..35.6.4.9.4.93.9.64.7.76.35.539.6.4.64..93.9.5.5.67.55.7..35.3 BSC.9 BSC 6 Dec,9,
STU/DL L3 E b C TO-5 D E D H L4 3 DETIL "" b e b L L L DETIL "" SYMBOLS MILLIMETERS MIN MX MIN INCHES MX..5.3.9.... b.4.9.6.35 b.77.4.3.45 b 4. 5.46.9.5 C.4.6.6.4 D 5.3 6.3.9.45 D 4.9 5.55.93.7 E 6.3 6.73.4.65 E 4.4 5.4.73.97 e.9 REF.9 BSC H.9.4.35.49 L.397.77.55.7 L.743 REF.. REF. L.5 REF.. REF. L3.9.7.35.67 L4.5...43 7 REF. 7 REF. 7 Dec,9,
STU/DL TO-5 Tube TO-5 Tube/TO-5 Tape and Reel Data 54 +.5 ~ 3. 4.5 5.5.4 7.5.5.9 " " 5.5.5.65 6.6.4 9.75 TO-5 Carrier Tape P T D P B E E K D P FEED DIRECTION UNIT: PCKGE TO-5 (6 B K D D E E E P P P T 6.96..49.79...5 +. - 6..3.75. 7.5.5.. 4....5.3.5 TO-5 Reel T M N E S G K V R H W UNIT: TPE SIZE 6 REEL SIZE 33 M N W T H K S G R V 33.5 97. 7. +.5 -. 3. +.5 -..6..5 Dec,9,