STN2302. N-Channel Enhancement Mode MOSFET. 20V N-Channel Enhancement Mode MOSFET FEATURE DESCRIPTION APPLICATIONS PIN CONFIGURATION
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1 DESCRIPTION The is the N-Channel logic enhancement mode power field effect transistor is produced using high cell density. advanced trench technology to provide excellent RDS(ON). low gate charge and operation gate as.8v. This device is suitable for use as a load switch or other general applications. S-TRG ROHS Compliant This is Halogen Free PIN CONFIGURATION 2V N-Channel Enhancement Mode MOSFET FEATURE 2V/4.A, RDS(ON) =mω(typ.)@vgs =4.V 2V/3.A, RDS(ON) =6mΩ(typ.)@VGS =2.V Super high density cell design for extremely low Gate Charge Exceptional on-resistance and Maximum DC current capability APPLICATIONS Power Management in Note book Portable Equipment Load Switch N-Channel Enhancement Mode MOSFET Drain D Gate Source G SOT-23 Top View S PART NUMBER INFORMATION ST N 232 S - TR G a b c d e f a : Company name. b : Channel type. c : Product Serial number. d : Package code e : Handling code f : Green product code Rev..
2 ORDERING INFORMATION Part Number Package Code Handling Code Shipping S-TRG S : SOT-23 TR : Tape&Reel 3K/Reel Year Code : ~ 9, 2 : Week Code : A(~2) ~ Z(3~4) SOT-23 : Only available in tape and reel packaging. ABSOLUTE MAXIMUM RATINGS (TA = 2 C Unless otherwise noted ) Symbol Parameter Typical Unit VDSS Drain-Source Voltage 2 V VGSS Gate-Source Voltage ±2 V ID Continuous Drain Current (TC=2 C) A 4.6 A VGS=4.V Continuous Drain Current (TC=7 C) A 3.8 A IDM Pulsed Drain Current B 4 A PD Power Dissipation TA=2 C TA=7 C TJ Operation Junction Temperature - to C TSTG Storage Temperature Range - to C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied...7 W THERMAL DATA Symbol Parameter Typ Max Unit RθJA Thermal Resistance-Junction to Ambient A Steady-State - 2 C/W RθJC Thermal Resistance Junction to Lead A Steady-State - 8 C/W Rev.. 2
3 ELECTRICAL CHARACTERISTICS(TA = 2 C Unless otherwise noted ) Symbol Parameter Condition Min Typ Max Unit Static Parameters Drain-Source Breakdown V(BR)DSS Voltage VGS=V,ID=2μA 2 V VGS(th) Gate Threshold Voltage VDS=VGS,ID=2μA.. V IGSS Gate Leakage Current VDS=V,VGS=±2V ± na IDSS RDS(ON) Zero Gate Voltage Drain Current Drain-source On-Resistance B VDS=2V,VGS=V VDS=2V,VGS=V TJ= C VGS=4.V,ID=4.A 4 VGS=2.V,ID=3.A 4 7 Gfs Forward Transconductance VDS=V,ID=3A. S Source-Drain Doide VSD Diode Forward Voltage IS=.A,VGS=V.7.2 V IS Continuous Source Current AD 3.6 A Dynamic Parameters Qg Qgs Qgd Total Gate Charge Gate-Source Charge Gate-Drain Charge VDS=V VGS=4.V ID=3.A Ciss Input Capacitance VDS=V Coss Output Capacitance VGS=V Crss Reverse Transfer Capacitance f=mhz 3 49 td(on) Turn-On Time VDD=V tr ID=3.A 4 72 td(off) VGEN=4.V Turn-Off Time RG=3.3Ω tf.6 Note: A. The value of R θja is measured with the device mounted on in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=2 C. B. The data tested by pulsed, pulse width 3uS, duty cycle 2% C. The EAS data shows Max. rating. The test condition is VDD=-2V,VGS=-V,L=.mH. D. The data is theoretically the same as ID and IDM, in real applications, should be limited by total power dissipation. The products and product specifications contained herein are subject to change without notice to improve performance characteristics. Consult us, or our representatives before use, to confirm that the information in this datasheet is up to date We assume no responsibility for any infringement of patents, patent rights, or other rights arising from the use of any information and circuitry in this datasheet. μa mω nc pf ns Rev.. 3
4 TYPICAL CHARACTERISTICS ID-Drain Current(A) 2 Output Characteristics VGS=V 4.V 3V VGS=2.V VGS=.8V RDS(mΩ) Drain-Source On Resistance 2 ID=3A C 4 2 C VDS-Drain Source Voltage(V) VGS-Gate Source Voltage(V) RDS(ON)(mΩ) Drain Source On Resistance VGS=4.V VGS=2.V ID-Drain Current(A) Normalized Threshold Voltage Gate Threshold Voltage IDS=2μA Tj-Junction Temperature( C) VGS(V) Gate Charge QG-Gate Charge(nC) Normalized Threshold Voltage Gate Threshold Voltage IDS=2μA Tj-Junction Temperature( C) Rev.. 4
5 TYPICAL CHARACTERISTICS Capacitance Source Source Drain Drain Diode Diode Forward 6.E+ C(pF) Ciss Coss Crss 2 2 IS-Source Current(A).E+.E-.E-2.E-3.E-4.E-..E IS-Source Current(A) -VDS-Drain Source Voltage(V) VSD-Source VSD-Source Drain Drain Voltage(V) Voltage(V) Power Dissipation Drain Current.4 6 Ptot-Power(W) ID-Drain Current(A) TJ-Junction Temperature( C) TJ-Junction Temperature( C) Normalized Transient Thermal Resistance.. Duty=.,.3,.,.,.2,. Thermal Transient Impedance Single Pulse..... Square Wave Pulse Duration(Sec) Rev..
6 SOT-23 PACKAGE DIMENSIONS RECOMMENDED LAND PATTERN.8mm.8mm 2.2mm.9mm Symbol Dimensions In Millimeters Dimensions In Inches Min. Max. Min. Max. A A....4 A b c D E E e.9 TYP..37 TYP e L. REF..22 REF. L θ 8 8 Rev.. 6
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P-Channel Enhancement Features VDS (V) =-V ID =-5.A (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 5mΩ (VGS =-.5V) RDS(ON) < 59mΩ (VGS =-.8V). -. SOT-.95 -..9 -.. -..9 -.. -..55. Unit: mm. -. +.5 G S
More informationSGP100N09T. Symbol Parameter SGP100N09T Unit. 70* -Continuous (TA = 100 )
SUPER-SEMI SUPER-MOSFET Super Gate Metal Oxide Semiconductor Field Effect Transistor 100V Super Gate Power Transistor SG*100N09T Rev. 1.01 Jun. 2016 SGP100N09T 100V N-Channel MOSFET Description The SG-MOSFET
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MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STT3P2UH7 3L2U SOT23-6L Tape and reel
P-channel 20 V, 0.087 Ω typ., 3 A STripFET H7 Power MOSFET in a SOT23-6L package Datasheet - production data Features Order code VDS RDS(on) max ID STT3P2UH7 20 V 0.1 Ω @ 4.5 3 A SOT23-6L Very low on-resistance
More informationSMC4860NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 30V, ID = 50A APPLICATIONS PART NUMBER INFORMATION
MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationPin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 18 A TA=70 C 14 A
MC86NA ingle N-Channel MOFET DECRIPTION MC86 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationMOSFET SI4558DY (KI4558DY)
Features SOP- N-Channel:VDS=3V ID=A RDS(ON) < 4mΩ (VGS = V) RDS(ON) < mω (VGS = 4.5V) P-Channel:VDS=-3V ID=-A.5.5 RDS(ON) < 4mΩ (VGS =-V) RDS(ON) < 7mΩ (VGS =-4.5V). +.4 -. Source Gate 3 Source 4 Gate
More informationPin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 30 V VGSS Gate-Source Voltage ±20 V TA=25 C 33 A TA=70 C 26 A
MC73PA ingle N-Channel MOFET DECRIPTION MC73 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationSMC4636NA. Single N-Channel MOSFET DESCRIPTION FEATURES VDS = 60V, ID = 13A APPLICATIONS PART NUMBER INFORMATION
MC3NA ingle N-Channel MOFET DECRIPTION MC3 is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
More informationFeatures. Description. Table 1: Device summary Order code Marking Package Packaging STR1P2UH7 1L2U SOT-23 Tape and reel
P-channel 20 V, 0.087 Ω typ., 1.4 A STripFET H7 Power MOSFET in a SOT-23 package Datasheet - production data Features Order code VDS RDS(on) max ID STR1P2UH7 20 V 0.1 Ω @ 4.5 1.4 A Very low on-resistance
More informationSSF8205A. GENERAL FEATURES VDS =20V,ID =6A RDS(ON) < Application Battery protection Load switch Power management
DESCRIPTION The SSF8205A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 0.65V. This device is suitable for use as a Battery protection
More informationPin 1. Symbol Parameter Rating Units VDSS Drain-Source Voltage 20 V VGSS Gate-Source Voltage ±10 V TA=25 C 23 A TA=70 C 18.5 A
MCNA ingle N-Channel MOFET DECRIPTION MC is the N-Channel enhancement mode power field effect transistors are using trench DMO technology. This advanced technology has been especially tailored to minimize
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