Main Product Characteristics V (BR)DSS 20V -20V 380mΩ@ 4.5V 520mΩ@-4.5V R DS(on) 450mΩ@2.5V 700mΩ@-2.5V 800mΩ@1.8V 950mΩ(TYP)@-1.8V 0.75A -0.66A SOT-563 Schematic Diagram Features and Benefits Advanced MOSFET process technology Ideal for load switching, logic level shift and battery management Low on-resistance with low gate charge Fast switching and reverse body recovery Description The SX3439K utilizes the latest techniques to achieve high cell density, low on-resistance and high repetitive avalanche rating. These features make this device extremely efficient and reliable for use in high efficiency switch mode power supply and a wide variety of other applications. Absolute Maximum Ratings (T A =25 C unless otherwise specified) Parameter Symbol Value Unit N-Ch MOSFET Drain-Source Voltage V DS 20 V Gate-Source Voltage ±12 V Continuous Drain Current 1 0.75 A Drain Current (tp= 10us) M 1.8 A P-Ch MOSFET Drain-Source Voltage V DS -20 V Gate-Source Voltage ±12 V Continuous Drain Current 1-0.66 A Drain Current (tp=10us) M -1.2 A Temperature and Thermal Resistance Thermal Resistance from Junction to Ambient 1 R θja 833 C/W Junction Temperature T J -55 to +150 C Storage Temperature T STG -55 to +150 C Lead Temperature for Soldering Purposes(1/8 from case for 10 s) T L 260 C 1/4
N-Ch MOSFET Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =250µA 20 --- --- V Zero Gate Voltage Drain Current IDSS VDS =20V,VGS = 0V --- --- 1 µa Gate-Body Leakage Current IGSS VGS =±10V, VDS = 0V --- --- ±20 ua Gate Threshold Voltage 2 VGS(th) VDS =, ID =250µA 0.35 --- 1.1 V RDS(on) td(on) SX3439K N-Channel Electrical Characteristics (T A =25 C unless otherwise specified) Drain-Source On-Resistance 2 VGS =4.5V, ID =0.65A --- --- 380 mω VGS =2.5V, ID =0.55A --- --- 450 mω VGS =1.8V, ID =0.45A --- --- 800 mω Forward Tranconductance 2 gfs VDS =10V, ID =0.8A --- 1.6 --- S Diode Forward Voltage V SD I S =0.15A, VGS = 0V --- --- 1.2 V Dynamic Characteristics 4 Input Capacitance C iss --- 79 120 pf Output Capacitance C oss VDS =16V,VGS =0V,f =1MHz --- 13 20 pf Reverse Transfer Capacitance C rss --- 9 15 pf Switching Characteristics 3,4 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time --- 6.7 --- ns tr =4.5V,V DS =10V, --- 4.8 --- ns td(off) =ma,r GEN =10Ω --- 17.3 --- ns Turn-Off Fall Time tf --- 7.4 --- ns 2/4
Notes : 1.Surface mounted on FR4 board using the minimum recommended pad size. 2. Pulse Test : Pulse width=μs, duty cycle 2%. 3. Switching characteristics are independent of operating junction temperature. SX3439K P-Channel Electrical Characteristics (T A =25 C unless otherwise specified) P-Ch MOSFET Parameter Symbol Test Condition Min Typ Max Unit Static Characteristics Drain-Source Breakdown Voltage V(BR)DSS VGS = 0V, ID =-250µA -20 --- --- V Zero Gate Voltage Drain Current IDSS VDS =-20V,VGS = 0V --- --- -1 µa Gate-Body Leakage Current IGSS VGS =±10V, VDS = 0V --- --- ±20 ua Gate Threshold Voltage 2 (th) VDS =, ID =-250µA -0.35 --- -1.1 V Drain-Source On-Resistance 2 RDS(on) VGS =-4.5V, ID =-1A --- --- 520 mω VGS =-2.5V, ID =-0.8A --- --- 700 mω VGS =-1.8V, ID =-0.5A --- 950 --- mω Forward Tranconductance 2 gfs VDS =-10V, ID =-0.54A --- 1.2 --- S Diode Forward Voltage VSD IS= -0.5A, VGS = 0V --- --- -1.2 V Dynamic Characteristics Input Capacitance C iss --- 113 170 pf Output Capacitance C oss VDS =-16V,VGS =0V,f =1MHz --- 15 25 pf Reverse Transfer Capacitance C rss --- 9 15 pf Switching Characteristics 3 Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time td(on) --- 9 --- ns tr =-4.5V,V DS =-10V, --- 5.8 --- ns td(off) =-200mA,R GEN =10Ω --- 32.7 --- ns tf --- 20.3 --- ns 3/4
N-Channel Typical Electrical and Thermal Characteristic Curves 5.0 4.5 Output Characteristics =4V,5V =3V 4.0 3.5 V DS =3V Transfer C haracteristics 4.0 3.5 3.0 2.5 2.0 1.5 1.0 =2.5V =2V =1.5V 3.0 2.5 2.0 1.5 1.0 0.5 0.5 0.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 DRAIN TO SOURCE VOLTAGE V DS 0.0 0 1 2 3 4 GATE TO SOURCE VOLTAGE 800 450 350 =1.8V =2.5V =4.5V 700 600 =0.65A 250 200 200 0. 1 0.2 0. 3 0. 4 0.5 0.6 0. 7 0. 8 0. 9 1.0 1. 1 1.2 2 I S V SD 100 1 2 3 4 5 GATE TO SOURCE VOLTAGE 0.8 Threshold Voltage 1 0.7 SOURCE CURRENT I S 0.1 THRESHOLD VOLTAGE V TH 0.6 0.5 0.4 =250uA 0.3 0.01 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 SOURCE TO DRAIN VOLTAGE SD 0.2 25 50 75 100 125 JUNCTION TEMPERATURE T j ( )
P-Channel Typical Electrical and Thermal Characteristic Curves -3.0-2.5 Output Characteristics =-4V,-5V =-3V -2.5-2.0 V DS =-3V Transfer C haracteristics -2.0-1.5-1.0 =-2.5V =-2V =-1.5V -1.5-1.0-0.5-0.5-0.0-0 -1-2 -3-4 -5 DRAIN TO SOURCE VOLTAGE V DS -0.0-0 -1-2 -3-4 GATE TO SOURCE VOLTAGE 1200 1000 1100 1000 900 800 700 600 =-1.8V =-2.5V =-4.5V 900 800 700 600 =-1A -0.5-0.6-0.7-0.8-0.9-1.0-1.1-1.2-1 -2-3 -4-5 GATE TO SOURCE VOLTAGE I S V SD Threshold Voltage -2-0.8-1 SOURCE CURRENT I S -0.1 THRESHOLD VOLTAGE V TH -0.6-0.4-0.2 =-250uA -0.01-0.0-0.2-0.4-0.6-0.8-1.0-1.2-1.4 SOURCE TO DRAIN VOLTAGE SD -0.0 25 50 75 100 125 JUNCTION TEMPERATURE T J ( )
Package Outline Dimensions SOT-563 Suggested Pad Layout Order Information Device Package Marking Carrier Quantity HSF Status SX3439K SOT-563 49K Tape & Reel 0pcs/Reel RoHS compliant www.goodarksemi.com 4/4 Doc.USX3439KxSC4.0