P 9766 HEXFET Power MOSFET V S 3 V R S(on) max (@V GS = V) 6.3 mω S2 G2 2 8 7 2 2 R S(on) max (@V GS = 4.5V) 23.8 mω Q g (typical) 9 nc I (@T = 25 C) S 3 G 4 6 5 SO8 9.2 pplications Charge and ischarge Switch for Notebook PC Battery pplication Features and Benefits Features IndustryStandard SO8 Package RoHS Compliant Containing no Lead, no Bromide and no Halogen results in Resulting Benefits MultiVendor Compatibility Environmentally Friendlier Orderable part number Package Type Standard Pack Form Quantity SO8 Tube/Bulk 95 IRF9358TRPbF SO8 Tape and Reel 4 Note bsolute Maximum Ratings V S V GS I @ T = 25 C I @ T = 7 C I M P @T = 25 C P @T = 7 C T J T STG Parameter raintosource Voltage GatetoSource Voltage Continuous rain Current, V GS @ V Continuous rain Current, V GS @ V Pulsed rain Current c Power issipation f Power issipation f Linear erating Factor Operating Junction and Storage Temperature Range Max. 3 ± 2 9.2 7.3 73 2..3.6 55 to 5 Units V W W/ C C Notes through are on page 2 www.irf.com /2/
Static @ T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV SS raintosource Breakdown Voltage 3 V V GS = V, I = 25μ ΔΒV SS /ΔT J Breakdown Voltage Temp. Coefficient.2 V/ C Reference to 25 C, I = m R S(on) 3. 6.3 V GS = V, I = 9.2 e Static raintosource OnResistance mω 9. 23.8 V GS = 4.5V, I = 7.3 e V GS(th) Gate Threshold Voltage.3.8 2.4 V V S = V GS, I = 25μ ΔV GS(th) Gate Threshold Voltage Coefficient 5.9 mv/ C I SS raintosource Leakage Current. V S = 24V, V GS = V μ 5 V S = 24V, V GS = V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 2V n GatetoSource Reverse Leakage V GS = 2V gfs Forward Transconductance 23 S V S = V, I = 7.3 Q g Total Gate Charge h 9 nc V S = 5V, V GS = 4.5V, I = 7.3 Q g Total Gate Charge h 38 V GS = V Q gs GatetoSource Charge h 5.8 nc V S = 5V Q gd Gatetorain Charge h 8.9 I = 7.3 R G Gate Resistance h 5 Ω t d(on) TurnOn elay Time 5.7 V = 5V, V GS = 4.5V e t r Rise Time 7.2 I =. ns t d(off) TurnOff elay Time 46 R G = 6.8Ω t f Fall Time 69 See Figs. 9a &9b C iss Input Capacitance 74 V GS = V C oss Output Capacitance 36 pf V S = 25V C rss Reverse Transfer Capacitance 24 ƒ =.MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy d 2 mj I R valanche Current c 7.3 iode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current (Body iode) 2. I SM Pulsed Source Current (Body iode)c 73 V S iode Forward Voltage.2 V t rr Reverse Recovery Time 55 83 ns Q rr Reverse Recovery Charge 35 53 nc Thermal Resistance R θjl R θj Parameter Junctiontorain Lead g Junctiontombient f Typ. MOSFET symbol showing the integral reverse pn junction diode. Conditions T J = 25 C, I S = 2., V GS = V e T J = 25 C, I F = 2., V = 24V di/dt = /μs e Max. 2 62.5 G Units C/W S Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 4.6mH, R G = 25Ω, I S = 6.4. ƒ Pulse width 4μs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J of approximately 9 C. For ESIGN I ONLY, not subject to production testing. 2 www.irf.com
C, Capacitance(pF) V GS, GatetoSource Voltage (V) I, raintosource Current () R S(on), raintosource On Resistance (Normalized) I, raintosource Current () I, raintosource Current () VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V 2.7V BOTTOM 2.5V VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.V 2.7V BOTTOM 2.5V. 2.5V 6μs PULSE WITH Tj = 25 C.. V S, raintosource Voltage (V) Fig. Typical Output Characteristics T J = 5 C 2.5V 6μs PULSE WITH Tj = 5 C.. V S, raintosource Voltage (V) Fig 2. Typical Output Characteristics.6.4.2 I = 9.2 V GS = V T J = 25 C. V S = 5V 6μs PULSE WITH. 2 3 4 5 V GS, GatetoSource Voltage (V) Fig 3. Typical Transfer Characteristics.8.6 6 4 2 2 4 6 8 2 4 6 T J, Junction Temperature ( C) Fig 4. Normalized OnResistance vs. Temperature V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss 4 2 8 I = 7.3 V S = 24V V S = 5V V S = 6.V C oss 6 C rss 4 2 2 3 4 5 Q G Total Gate Charge (nc) V S, raintosource Voltage (V) Fig 5. Typical Capacitance vs.raintosource Voltage Fig 6. Typical Gate Charge vs.gatetosource Voltage www.irf.com 3
V GS(th), I, rain Current () Gate threshold Voltage (V) I S, Reverse rain Current () I, raintosource Current () OPERTION IN THIS RE LIMITE BY R S (on) T J = 5 C T J = 25 C C msec msec V GS = V..2.4.6.8..2 V S, Sourcetorain Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 2.5 T = 25 C Tj = 5 C Single Pulse.. V S, raintosource Voltage (V) 8 2. I = 25μ 6.5 4 2. 25 5 75 25 5 T, mbient Temperature ( C) Fig 9. Maximum rain Current vs. mbient Temperature.5 75 5 25 25 5 75 25 5 T J, Temperature ( C ) Fig. Threshold Voltage vs. Temperature Thermal Response ( Z thj ) C/W =.5.2..5.2... SINGLE PULSE ( THERML RESPONSE ) Notes:. uty Factor = t/t2 2. Peak Tj = P dm x Zthja T. E6 E5.... t, Rectangular Pulse uration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient 4 www.irf.com
E S, Single Pulse valanche Energy (mj) Single Pulse Power (W) R S(on), rainto Source On Resistance (mω) R S (on), rainto Source On Resistance (mω) 5 I = 9.2 5 4 4 3 2 T J = 25 C 3 V GS = 4.5V T J = 25 C 2 V GS = V 2 4 6 8 2 4 6 8 2 V GS, Gate to Source Voltage (V) Fig 2. OnResistance vs. Gate Voltage 2 3 4 5 6 7 I, rain Current () Fig 3. Typical OnResistance vs. rain Current 8 6 I TOP.9.5 BOTTOM 7.3 8 6 4 4 2 2 25 5 75 25 5 Starting T J, Junction Temperature ( C) Fig 4. Maximum valanche Energy vs. rain Current E5 E4 E3 E2 E E Time (sec) Fig 5. Typical Power vs. Time.U.T * ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer Reverse Recovery Current river Gate rive Period P.W..U.T. I S Waveform Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt = P.W. Period V GS =V V * R G di/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V Repplied Voltage Body iode Inductor Curent Current Forward rop Ripple 5% I S * Reverse Polarity of.u.t for PChannel * V GS = 5V for Logic Level evices Fig 6. iode Reverse Recovery Test Circuit for PChannel HEXFET Power MOSFETs www.irf.com 5
Id Vds Vgs 2K K S UT L VCC Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform V S L I S R G.U.T V V 2V GS tp IS.Ω RIVER tp V (BR)SS 5V Fig 8a. Unclamped Inductive Test Circuit Fig 8b. Unclamped Inductive Waveforms R V S R G V GS.U.T. V GS t d(on) t r t d(off) t f % V V GS Pulse Width µs uty Factor. % 9% V S Fig 9a. Switching Time Test Circuit Fig 9b. Switching Time Waveforms 6 www.irf.com
SO8 Package Outline(Mosfet & Fetky) imensions are shown in milimeters (inches) E 6 6X 5 8 7 6 5 2 3 4 e B H.25 [.] IM b E e e H K L y INCHES MIN MX.532.688.4.98.3.2.89.968 4.8.497.574 3.8.5 BSIC.27 BSIC.25 BSIC.635 BSIC.2284.244 5.8.99.96.25.6.5.4 8 MILLIMET ERS MIN MX.35.75..25.33.5 c.75.98.9.25 5. 4. 6.2.5.27 8 e C y K x 45 8X b.25 [.] C B. [.4] 8X L 7 8X c FOOTPRINT NOTES :. IMENSIONING & TOLERNCING PER SME Y4.5M994. 2. CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS2. 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE.5 [.6]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE.25 [.]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE. SO8 Part Marking Information 6.46 [.255] 3X.27 [.5] 8X.72 [.28] 8X.78 [.7] EXMPLE: THIS IS N IRF7 (MOSFET) INTERNTIONL RECTIFIER LOGO XXXX F7 T E COE (YWW) P = ISGNTES LE FREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEE K = S S E MB LY S IT E COE LOT COE PRT NUMBER Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ www.irf.com 7
SO8 Tape and Reel (imensions are shown in milimeters (inches)) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI54. 33. (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI54. 4.4 (.566 ) 2.4 (.488 ) Qualification Information Qualification level Moisture Sensitivity Level RoHS Compliant Consumer (per JEEC JES47F guidelines) MSL SO8 (per JEEC JST2 ) Yes Qualification standards can be found at International Rectifier s web site http://www.irf.com/productinfo/reliability Higher qualification ratings may be available should the user have such requirements. Please contact your International Rectifier sales representative for further information: http://www.irf.com/whotocall/salesrep/ pplicable version of JEEC standard at the time of product release. ata and specifications subject to change without notice. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 9245, US Tel: (3) 25275 TC Fax: (3) 252793 Visit us at www.irf.com for sales contact information./2 8 www.irf.com