Development of Broadband Class E Power Amplifier for WBAN Applications
|
|
- Shauna Morgan
- 5 years ago
- Views:
Transcription
1 Volume 118 No , ISSN: (printed version); ISSN: (on-line version) url: ijpam.eu Development of Broadband Class E Power Amplifier for WBAN Applications R. Shankar 1, M. C. John Wiselin 2, B.S.Sreeja 3 1 Research Scholar, PRIST University,Thanjavur & Associate Professor/ECE, Kongunadu College of Engineering &Technology,Trichy,Tamilnadu,India. 2 Head and Professor/EEE, Vidya Academy of Science and Technology, Thrissur,Kerala,India 3 SSN College of Engineering, Chennai,Tamilnadu,India Abstract In this paper, a Class E Power Amplifier (Class-E PA) suitable for Wireless Body Area Networks (WBAN) is proposed. A commercially available RF3931 GaN (gallium nitride) high electron mobility transistor deviceis used in the proposed design, together with an active harmonic load pull analysis of the class E mode. The proposed PA utilizes a band pass filter matching network and operates in the frequency range of 6.78MHz to 2.2GHz. The designed PA is fabricated in FR4 substrate and the measurement results are provided. The designed PA provides 78.5% of maximum power efficiency with a fractional bandwidth of 40 while achieving the gain of 10.8-to db. The maximum output power achieved is 42.9 dbw. Keywords: Broad band power amplifier, Wireless body area networks, Class E Amplifier, Power efficiency. 1 Introduction Future communication systems are driven by the concept of being connected any-where at any time. This is not limited to even in medical area. Wireless medical communications assisting peoples work and replacing wires in a hospital are the applying wireless communications in medical healthcare. Power amplifier generally used in electronics items especially in loud speaker and more items but now they used for medical application also. Early they have less efficiency and power of Class E they are not used for the high frequency application. Now they used for broadband applications. Especially for medical application (WBAN) is a sensor that can help to sense the network that can operate automatically and connect to the various application [1] because it is an wireless device that can be connected to wireless network of wearable computing device and for medical use they have lesser weight then the wired appliances and then they can be portable and the devices in smaller in size and easy use also. Class E power amplifier having high efficiency than other power 1 amplifier, to increase the power efficiency and bandwidth of medical appliances can reduce the power consumption and the process can monitor the patient more accurately. The WBAN have low power radiation [11] and reduces the harmful effects in human body monitoring human body for long time also because they have low power requirement [5]. Class E having short range for high data rates they have more power and accuracy for longer equipments also. WLAN transmitter having low data rates and then they can used for Bluetooth, cellular phones etc. This paper is organized as follows in two ways: First class E power amplifier design and simulation, Second layout of class E power amplifier for (WBAN) medical applications. The design of class E power amplifier having different steps because every steps determined that efficiency, [7] power and stability measurement and to optimize the power amplifier for increase the efficiency that case used for implementation of the medical applications and the transmitter of class E power amplifier having [12] low power dissipation and the sensor of WBAN used to sense the particular area of human body (affected area) now currently they can used for cancer detection also available by using the WBAN even the smaller area also easily detected because of its accuracy and efficiency. In [8] they use the technologies of MESFET HBT that transistor gives lower efficiency and low breakdown voltage with limitation of output power, [2] they achieved highefficiency wideband application by using GaN-HEMT power amplifier based on the method of source pull/load pull simulation has been used to find optimum source, [3] by using suppressing harmonic powers, and the output network using the transmission line, [4,10] by choosing the proper switching frequency can reduces the unwanted power wastage and improving the efficiency up to 72%. The section can be hardware that can implemented in the 745
2 medical machine make that machine should be in smaller in size and high power efficiency that is achievement of this paper. The frequency range of class E power amplifier is 6.78MHz 2.2GHz for the application of broadband power amplifier. 2 Power amplifier design The design of general power amplifier having some specific steps and then that determines how much efficient and gain of designing here the power amplifier steps are in four ways they are DC load line analysis, Bias and stability, Load pull analysis, Impedance matching and then to optimize because to improve the efficiency value. the current as well as it reduces the power consumption so they give good efficiency. The achievement from the simulation is determined that voltage value should voltage drain source (VDS) is 5.00V and then the device power consumption Watts can be determined so that if increasing the voltage decreasing the current values should be efficient. 3 Bias and Stability The biasing and stability of class E power determines that, the biasing is used to reduce the error of device so that it gives perfect error correction that depends upon the DC Load line because the transistor or the device which should be in correct region or else it will make the device in suitably fixed in device characteristics so that biasing is must. The stability has two different conditions that should be satisfied so that device should be in stability and biasing for more accuracy of the device and make the device should be suitable biasing for satisfying the stability conditions, they have conditions of Figure 1. Circuit diagram Stability factor Stability measure The detailed discussion of Figure 1 mentioned that information of RF as an input and same RF should be output that is they used for high frequency measurement and C4 is used for distortion 2.2pF, for biasing and stability to reduce the resistor (for flow of current) C1,C2,C3 respective values are 0.1uF,100pF,22pF is used. The impedance matching is used for input and output matching to reduce the signal reflection and the capacitor of C7, C8 used for achieving the high gain and high efficiency and device should be centred in circuit. 2 DC load line Analysis Generally the DC load line analysis is used to determine characteristics of the device here the device is RF3931 device for class E power amplifier, they have load line between the voltage and current values and they have three characteristics region they are[1] Active region [2] Saturation region [3] Cut-off region. The active region shows that they have maximum current values that only determine the load line and Q point in the characteristics. The Saturation region determines that have maximum current and minimum of voltage and this is also called it has saturation current region. The cut-off region determines that they have maximum voltage and minimum current and this is vice versa to saturation region. The centre point is called quiescent point region. The observation of DC Load line is, if increases the voltage it will decreases 2 A. Stability factor The stability factor determines that they having k constant that is also called it has k factor that should be greater than or equal to one. B.Stability measure It is used for quantifying its accuracy and precision and stability measurement it should be lesser than the one. By satisfying this two conditions will determines the power amplifier having good bias and stability condition in it. 4 Loadpull analysis The load pull analysis is determined that the set of contour that shows their results in smith chart and it gives maximum output power by its load impedance and it is very important to determine the actual impedance of the device it should increase the gain and source impedance by using this load pull will determined the impedance matching the device gives the gain as at maximum power and then the values of impedance should determine by the load pull analysis power added efficiency up to 72% and the output power should be in dbm. It is mainly used to improve the gain value first that achieves up 746
3 to db, and then source power will be calculated up to 32 dbw, load pull shows in smith chart analysis. 5 Impedance matching In amplifier, impedance matching is a practice of designing the input impedance of an electric load or the output impedance of the signal source. The impedance matching is either used to maximize the power transfer or minimize the signal reflection from the load. The impedance matching is very important to determine the characteristics of power added efficiency (PAE) 32 for 1GHz and then optimization is done to improve the efficiency by using the tuning process it will increases up to 64 percentages of efficiency and the impedance matching will be shown in it. The input impedance and output impedance are calculated by the load pull analysis output that same value should be used in it and to improve the matching network using the one tone amplifier and the two tone is used for slider power input and spectrum analyzer can be measured for 1GHz value. The slider can used to calculate the Adjacent Channel Power Ratio (ACPR) that power ratio of class E power amplifier is 28 power input (Pin) and the spectrum reaches up to 64 dbm for 1GHz values. Figure 3. Layout of Lumped Components The layout of complete design in Figure (3) with its measurements the breadth of the layout is and and the length of the measurements is and they dimension needs the specifications in order to specify the area required for the layout determinations. This will show the accurate Class E power amplifier having high efficiency for the medical applications. Figure 2. Layout for transistor via ground The layout generation determines the efficiency of the devices this paper achieves high efficiency up to 64 dbm for the application of broadband power amplifier and they have ground generation layout, the transistors placed via the ground and that placement determines the power of the amplifier and determines the various connectionless transistor is developed in it. The process of lumped components that shows a different areas component can be placed in Figure (1) is shown. The fabrication process can have hardware simulation and then the different components can be attached in single board to minimize the area of broadband applications. Figure 4. Layout of complete design of class E power amplifier The layout mentioned that the size of the device should be reduced by choosing the proper switching frequency reduces the power dissipation by reducing the current values it reduces power consumption in the device and usage of device is higher and the process of device for long time applications. And the hardware simulation determines the complete class E power amplifier efficiently achieved. The layout generation denotes the size of the power amplifier is reduced and comparably increasing the efficiency
4 maximum of output power is higher that shown in Table 1 is 42.9 (dbw) is measured in power amplifier. Table 1. Comparison for different values of Gain and Power added Efficiency Figure 5. Fabrication of Power Amplifier 6 Measurement results The results shows that output power Vs gain, the gain increases for particular frequency and then decreases suddenly in the range of 41dBm values, and then power ration should be calculated in the power added efficiency is difference the RF output power and RF input power by RF DC power gives the power added efficiency values from the class E power amplifier for WBAN application the efficiency value is higher from this they reach up to 45dBm values this is the major advantage is improvement in the efficiency and the gain value is up to 15dB. Index Frequency bands (GHz) Fracti onal band width (%) PAE (db) at Pmax (%) PAE at 6 db OBO (%) Gain (db) [1] [2] [3] [4] [5] [6] [7] [8] [9] [10] This Work Max. no Pout (dbw) Figure 6. PAE (%) versus output power (dbm) 7 Conclusion This paper gives a broad review of GaN HEMTs in terms of high efficiency for broadband applications. The design of class E power amplifier for efficient high power amplifier for the frequency range of 6.28MHz-to 2.2GHz, produces the high efficiency obtained for low power level and maximum power added efficiency of 50.8-to 78.5%. The proposed class E power amplifier design within this frequency is used for medical applications and wireless networks (WBAN) they have short range of high data rate communication that reduces the harmful effects for human body and monitor them accurately. This method is very well suited for wireless medical application. Figure 7.. Gain (db) versus output power (dbm) The process of WBAN having the frequency range of 6.78MHz to-2.2ghz and the graph shows that output power values and then range of gain values and power added efficiency for showing the effectiveness of the medical applications. The range of class E power amplifier is fractional bandwidth of WBAN is 40, and the power added efficiency at maximum power should be 78.5% and the gain is 10.8-to 14.8 db values and 4 References 1. M. Acar, A. J. Annema, and B. Nauta, Analytical design equations for class-e power amplifiers, IEEE Trans. Circuits Syst. I, Reg. Papers,vol. 54, no. 12, pp , December R. Brama, L. Larcher, A. Mazzanti, and F. Svelto, A 30.5 dbm 48%PAE CMOS class-e PA with integrated balun for RF applications, IEEE J. Solid-State Circuits, vol. 43, no. 8, pp , August M. J. Deen, M. M. El-Desouki, H. M. Jafari, and S. Asgaran, Lowpower integrated CMOS RF transceiver circuits for short-range 748
5 applications, Proc. of 50 th IEEE MWSCAS, pp , August Y. S. Eo, H. J. Yu, S. S. Song, Y. Y. Ko, and J. Y. Kim, A fully integrated 2.4 GHz low IF CMOS transceiver for ZigBee applications, Proc. of IEEE ASSCC, pp , November J. Y. Hasani and M. Kamarei, Analysis and optimum design of class E RF power amplifier, IEEE Trans. Circuits Syst. I, Reg. Papers, vol.55, no. 6, pp , July Jun Tan,Chun-HuatHeng,YongLian Design of Efficient Class-E Power Amplifiers for Short Distance Communications IEEE Trans.CircuitsSyst..I, vol.59, no.4, pp , October M. K. Kazimierczuk and K. Puczko, Exact analysis of class E tuned power amplifier at any Q and switch duty cycle, IEEE Trans. Circuits Syst., vol. CAS-34, no. 2, pp , February O. Lee, K. H. An, and H. Kim et al., Analysis and design of fully integrated high-power parallelcircuit class-e CMOS power amplifiers, IEEE Trans. Circuits Syst. I, Reg. Papers, vol. 57, no. 3, pp , March F. H. Raab, Idealized operation of the class E tuned power amplifier, IEEE Trans. Circuits Syst., vol. CAS-24, no. 12, pp , December G. Retz, H. Shanan, K. Mulvaney, S. O Mahony, M. Chanca, P.Crowley, C. Billon, K. Khan, and P. Quinlan, A highly integrated low-power 2.4 GHz transceiver using a direct-conversion diversity receiver in 0.18 m CMOS for IEEE WPAN, in Proc. of IEEE ISSCC, February S. Sivakumar and A. Eroglu, Analysis of class-e based RF power amplifiers using harmonic modeling, IEEE Trans. Circuits Syst. I, Reg.Papers, vol. 57, no. 1, pp , January T. Suetsugu and M. K. Kazimierczuk, Maximum operating frequency of class-e amplifier at any duty ratio, IEEE Trans. Circuits Syst. II,Exp. Briefs, vol. 55, no. 8, pp , August
6 750
Design and simulation of Parallel circuit class E Power amplifier
International Journal of scientific research and management (IJSRM) Volume 3 Issue 7 Pages 3270-3274 2015 \ Website: www.ijsrm.in ISSN (e): 2321-3418 Design and simulation of Parallel circuit class E Power
More informationA New Topology of Load Network for Class F RF Power Amplifiers
A New Topology of Load Network for Class F RF Firas Mohammed Ali Al-Raie Electrical Engineering Department, University of Technology/Baghdad. Email: 30204@uotechnology.edu.iq Received on:12/1/2016 & Accepted
More informationHigh Power Two- Stage Class-AB/J Power Amplifier with High Gain and
MPRA Munich Personal RePEc Archive High Power Two- Stage Class-AB/J Power Amplifier with High Gain and Efficiency Fatemeh Rahmani and Farhad Razaghian and Alireza Kashaninia Department of Electronics,
More informationThe Design of A 125W L-Band GaN Power Amplifier
Sheet Code RFi0613 White Paper The Design of A 125W L-Band GaN Power Amplifier This paper describes the design and evaluation of a single stage 125W L-Band GaN Power Amplifier using a low-cost packaged
More informationRFIC DESIGN ELEN 351 Session4
RFIC DESIGN ELEN 351 Session4 Dr. Allen Sweet January 29, 2003 Copy right 2003 ELEN 351 1 Power Amplifier Classes Indicate Efficiency and Linearity Class A: Most linear, max efficiency is 50% Class AB:
More informationRF2334. Typical Applications. Final PA for Low Power Applications Broadband Test Equipment
RF233 AMPLIFIER Typical Applications Broadband, Low Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low Power Applications Broadband Test Equipment Product Description
More informationA Simulation-Based Flow for Broadband GaN Power Amplifier Design
Rubriken Application A Simulation-Based Flow for Broadband GaN Power Amplifier Design This application note demonstrates a simulation-based methodology for broadband power amplifier (PA) design using load-line,
More informationResearch Paper DESIGN SIMULATION AND ANALYSIS OF CLASS E POWER AMPLIFIER
Research Paper DESIGN SIMULATION AND ANALYSIS OF CLASS E POWER AMPLIFIER 1 Shankar R, 2 M.C.John Wiselin, 3 Divya Selvathurai Address for Correspondence 1 Research Scholar, PRIST University,Thanjavur,Tamilnadu,India.
More informationDESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS
Progress In Electromagnetics Research Letters, Vol. 39, 73 80, 2013 DESIGN OF AN S-BAND TWO-WAY INVERTED ASYM- METRICAL DOHERTY POWER AMPLIFIER FOR LONG TERM EVOLUTION APPLICATIONS Hai-Jin Zhou * and Hua
More informationPush-Pull Class-E Power Amplifier with a Simple Load Network Using an Impedance Matched Transformer
Proceedings of the International Conference on Electrical, Electronics, Computer Engineering and their Applications, Kuala Lumpur, Malaysia, 214 Push-Pull Class-E Power Amplifier with a Simple Load Network
More informationHigh-efficiency class E/F 3 power amplifiers with extended maximum operating frequency
LETTER IEICE Electronics Express, Vol.15, No.12, 1 10 High-efficiency class E/F 3 power amplifiers with extended maximum operating frequency Chang Liu 1, Xiang-Dong Huang 2a), and Qian-Fu Cheng 1 1 School
More information400 MHz to 4000 MHz ½ Watt RF Driver Amplifier ADL5324
Data Sheet FEATURES Operation from MHz to MHz Gain of 14.6 db at 21 MHz OIP of 4.1 dbm at 21 MHz P1dB of 29.1 dbm at 21 MHz Noise figure of.8 db Dynamically adjustable bias Adjustable power supply bias:.
More informationRF3375 GENERAL PURPOSE AMPLIFIER
Basestation Applications Broadband, Low-Noise Gain Blocks IF or RF Buffer Amplifiers Driver Stage for Power Amplifiers Final PA for Low-Power Applications High Reliability Applications RF3375General Purpose
More informationA GHz Highly Linear Broadband Power Amplifier for LTE-A Application
Progress In Electromagnetics Research C, Vol. 66, 47 54, 2016 A 1.8 2.8 GHz Highly Linear Broadband Power Amplifier for LTE-A Application Chun-Qing Chen, Ming-Li Hao, Zhi-Qiang Li, Ze-Bao Du, and Hao Yang
More informationAPPLICATION NOTE dBm PA and PA Predriver with 37% Efficiency for 2.4GHz FHSS WLAN Applications
Maxim > App Notes > WIRELESS, RF, AND CABLE Keywords: rf, pa, bluetooth, 2.4ghz wireless, rfic, wlan, fhss, lna, rf ics May 01, 2001 APPLICATION NOTE 584 +23dBm PA and PA Predriver with 37% Efficiency
More informationA 2 4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency
Progress In Electromagnetics Research Letters, Vol. 63, 7 14, 216 A 2 4 GHz Octave Bandwidth GaN HEMT Power Amplifier with High Efficiency Hao Guo, Chun-Qing Chen, Hao-Quan Wang, and Ming-Li Hao * Abstract
More informationDESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END
Volume 117 No. 16 2017, 685-694 ISSN: 1311-8080 (printed version); ISSN: 1314-3395 (on-line version) url: http://www.ijpam.eu ijpam.eu DESIGN OF 2.4 GHZ LOW POWER CMOS TRANSMITTER FRONT END 1 S.Manjula,
More informationLinearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier
Linearization Method Using Variable Capacitance in Inter-Stage Matching Networks for CMOS Power Amplifier Jaehyuk Yoon* (corresponding author) School of Electronic Engineering, College of Information Technology,
More informationISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9
ISSCC 2006 / SESSION 11 / RF BUILDING BLOCKS AND PLLS / 11.9 11.9 A Single-Chip Linear CMOS Power Amplifier for 2.4 GHz WLAN Jongchan Kang 1, Ali Hajimiri 2, Bumman Kim 1 1 Pohang University of Science
More informationAbsolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 39 ma Operational Voltage
60W GaN WIDEBAND POWER AMPLIFIER Package: Hermetic 2-Pin Flanged Ceramic Features Broadband Operation DC to 3.5GHz Advanced GaN HEMT Technology Advanced Heat-Sink Technology Small Signal Gain = db at 2GHz
More information10W Ultra-Broadband Power Amplifier
(TH1B-01 ) 10W Ultra-Broadband Power Amplifier Amin K. Ezzeddine and Ho. C. Huang AMCOM Communications, Inc 401 Professional Drive, Gaithersburg, MD 20879, USA Tel: 301-353-8400 Email: amin@amcomusa.com
More informationLoad Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model
APPLICATION NOTE Load Pull Validation of Large Signal Cree GaN Field Effect Transistor (FET) Model Introduction Large signal models for RF power transistors, if matched well with measured performance,
More informationDesign of High PAE Class-E Power Amplifier For Wireless Power Transmission
This article has been accepted and published on J-STAGE in advance of copyediting. Content is final as presented. IEICE Electronics Express, Vol.*, No.*, 1 8 Design of High PAE Class-E Power Amplifier
More informationThe following part numbers from this appnote are not recommended for new design. Please call sales
California Eastern Laboratories APPLICATION NOTE AN1038 A 70-W S-Band Amplifier For MMDS & Wireless Data/Internet Applications Shansong Song and Raymond Basset California Eastern Laboratories, Inc 4590
More informationIn modern wireless. A High-Efficiency Transmission-Line GaN HEMT Class E Power Amplifier CLASS E AMPLIFIER. design of a Class E wireless
CASS E AMPIFIER From December 009 High Frequency Electronics Copyright 009 Summit Technical Media, C A High-Efficiency Transmission-ine GaN HEMT Class E Power Amplifier By Andrei Grebennikov Bell abs Ireland
More information0.5GHz - 1.5GHz Bandwidth 10W GaN HEMT RF Power Amplifier Design
International Journal of Electrical and Computer Engineering (IJECE) Vol. 8, No. 3, June 2018, pp. 1837~1843 ISSN: 2088-8708, DOI: 10.11591/ijece.v8i3.pp1837-1843 1837 0.5GHz - 1.5GHz Bandwidth 10W GaN
More informationEnergy Efficient Transmitters for Future Wireless Applications
Energy Efficient Transmitters for Future Wireless Applications Christian Fager christian.fager@chalmers.se C E N T R E Microwave Electronics Laboratory Department of Microtechnology and Nanoscience Chalmers
More informationSwitching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency
Switching Behavior of Class-E Power Amplifier and Its Operation Above Maximum Frequency Seunghoon Jee, Junghwan Moon, Student Member, IEEE, Jungjoon Kim, Junghwan Son, and Bumman Kim, Fellow, IEEE Abstract
More informationANALYSIS OF BROADBAND GAN SWITCH MODE CLASS-E POWER AMPLIFIER
Progress In Electromagnetics Research Letters, Vol. 38, 151 16, 213 ANALYSIS OF BROADBAND GAN SWITCH MODE CLASS-E POWER AMPLIFIER Ahmed Tanany, Ahmed Sayed *, and Georg Boeck Berlin Institute of Technology,
More informationLinearization of Three-Stage Doherty Amplifier
Linearization of Three-Stage Doherty Amplifier NATAŠA MALEŠ ILIĆ, ALEKSANDAR ATANASKOVIĆ, BRATISLAV MILOVANOVIĆ Faculty of Electronic Engineering University of Niš, Aleksandra Medvedeva 14, Niš Serbia
More informationDesign and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology
Design and Layout of a X-Band MMIC Power Amplifier in a Phemt Technology Renbin Dai, and Rana Arslan Ali Khan Abstract The design of Class A and Class AB 2-stage X band Power Amplifier is described in
More informationLINEARIZED CMOS HIGH EFFECIENCY CLASS-E RF POWER AMPLIFIER
Proceedings of the 5th WSEAS Int. Conf. on Electronics, Hardware, Wireless and Optical Communications, Madrid, Spain, February 5-7, 006 (pp09-3) LINEARIZED CMOS HIGH EFFECIENCY CLASS-E RF POWER AMPLIFIER
More informationHigh Efficiency Classes of RF Amplifiers
Rok / Year: Svazek / Volume: Číslo / Number: Jazyk / Language 2018 20 1 EN High Efficiency Classes of RF Amplifiers - Erik Herceg, Tomáš Urbanec urbanec@feec.vutbr.cz, herceg@feec.vutbr.cz Faculty of Electrical
More informationWideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios
The University Of Cincinnati College of Engineering Wideband Reconfigurable Harmonically Tuned GaN SSPA for Cognitive Radios Seth W. Waldstein The University of Cincinnati-Main Campus Miguel A. Barbosa
More informationDesign of Class F Power Amplifiers Using Cree GaN HEMTs and Microwave Office Software to Optimize Gain, Efficiency, and Stability
White Paper Design of Class F Power Amplifiers Using Cree GaN HEMTs and Microwave Office Software to Optimize Gain, Efficiency, and Stability Overview This white paper explores the design of power amplifiers
More informationRF W GaN WIDEBAND PULSED POWER AMPLIFIER
280W GaN WIDE- BAND PULSED POWER AMPLI- FIER 280W GaN WIDEBAND PULSED POWER AMPLIFIER Package: Hermetic 2-Pin, Flanged Ceramic Features Wideband Operation 2.8GHz to 3.4GHz Advanced GaN HEMT Technology
More informationA 1-W GaAs Class-E Power Amplifier with an FBAR Filter Embedded in the Output Network
A 1-W GaAs Class-E Power Amplifier with an FBAR Filter Embedded in the Output Network Kyle Holzer and Jeffrey S. Walling University of Utah PERFIC Lab, Salt Lake City, UT 84112, USA Abstract Integration
More information30 MHz to 6 GHz RF/IF Gain Block ADL5544
Data Sheet FEATURES Fixed gain of 17.4 db Broadband operation from 3 MHz to 6 GHz Input/output internally matched to Ω Integrated bias control circuit OIP3 of 34.9 dbm at 9 MHz P1dB of 17.6 dbm at 9 MHz
More informationDESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM
M. S. Alam, O. Farooq, and Izharuddin and G. A. Armstrong DESIGN AND SIMULATION OF A GaAs HBT POWER AMPLIFIER FOR WIDEBAND CDMA WIRELESS SYSTEM M. S. Alam, O. Farooq, Izharuddin Department of Electronics
More informationSilicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications
Silicon-Carbide High Efficiency 145 MHz Amplifier for Space Applications By Marc Franco, N2UO 1 Introduction This paper describes a W high efficiency 145 MHz amplifier to be used in a spacecraft like AMSAT
More informationRFG1M MHZ to 1000MHZ 180W GaN RFG1M MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced
700MHZ to 1000MHZ 180W GaN 700MHZ TO 1000MHZ 180W GaN POWER AMPLIFIER Package: Flanged Ceramic, 2-pin, RF400-2 Features Advanced GaN HEMT Technology Typical Peak Modulated Power >240W Advanced Heat Sink
More informationWideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations
Base Station Power Amplifier High Efficiency Wideband and High Efficiency Feed-Forward Linear Power Amplifier for Base Stations This paper presents a new feed-forward linear power amplifier configuration
More informationToday s wireless system
From May 2009 High Frequency Electronics Copyright 2009 Summit Technical Media, LLC High-Power, High-Efficiency GaN HEMT Power Amplifiers for 4G Applications By Simon Wood, Ray Pengelly, Don Farrell, and
More informationDownloaded from edlib.asdf.res.in
ASDF India Proceedings of the Intl. Conf. on Innovative trends in Electronics Communication and Applications 2014 242 Design and Implementation of Ultrasonic Transducers Using HV Class-F Power Amplifier
More informationDesign of an Efficient Single-Stage and 2-Stages Class-E Power Amplifier (2.4GHz) for Internet-of-Things
Design of an Efficient Single-Stage and 2-Stages Class-E Power Amplifier (2.4GHz) for Internet-of-Things Ayyaz Ali, Syed Waqas Haider Shah, Khalid Iqbal Department of Electrical Engineering, Army Public
More informationGain and Return Loss vs Frequency. s22. Frequency (GHz)
SBA4086Z DCto5GHz, CASCADABLE InGaP/GaAs HBT MMIC AMPLIFIER Package: SOT-86 Product Description RFMD s SBA4086Z is a high performance InGaP/GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A Darlington
More information50 MHz to 4.0 GHz RF/IF Gain Block ADL5602
Data Sheet FEATURES Fixed gain of 20 db Operation from 50 MHz to 4.0 GHz Highest dynamic range gain block Input/output internally matched to 50 Ω Integrated bias control circuit OIP3 of 42.0 dbm at 2.0
More informationRF3376 General Purpose Amplifier
General Purpose Amplifier RF3376 General Purpose Amplifier Package Style: SOT8 Features DC to >6000MHz Operation Internally Matched Input and Output 22dB Small Signal Gain +2.0dB Noise Figure +11dBm Output
More informationMicrowave Office Application Note
Microwave Office Application Note INTRODUCTION Wireless system components, including gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (phemt) frequency doublers, quadruplers, and
More informationVCC RF IN. Input Match VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
3.0V TO 3.6V, 2.4GHz TO 2.5GHz LINEAR POWER AMPLIFIER Package Style: QFN, 8-Pin, 2.2x2.2x0.45mm Features Single Power Supply 3.0V to 3.6V 30dB Typical Gain, Input ed to 50 2.4GHz to 2.5GHz Frequency Range
More informationCGA-6618Z Dual CATV 5MHz to 1000MHz High Linearity GaAs HBT Amplifier CGA-6618Z DUAL CATV 5MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: E
Dual CATV 5MHz to 1MHz High Linearity GaAs HBT Amplifier DUAL CATV 5MHz to 1MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-1Z is a high performance GaAs HBT MMIC amplifier.
More informationMicrowave Office Application Note
Microwave Office Application Note INTRODUCTION Wireless system components, including gallium arsenide (GaAs) pseudomorphic high-electron-mobility transistor (phemt) frequency doublers, quadruplers, and
More informationWITH mobile communication technologies, such as longterm
IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II: EXPRESS BRIEFS, VOL. 63, NO. 6, JUNE 206 533 A Two-Stage Broadband Fully Integrated CMOS Linear Power Amplifier for LTE Applications Kihyun Kim, Jaeyong Ko,
More informationUneven Doherty Amplifier Based on GaN HEMTs Characteristic
11 International Conference on Circuits, System and Simulation IPCSIT vol.7 (11) (11) IACSIT Press, Singapore Uneven Doherty Amplifier Based on GaN HEMTs Characteristic K. Pushyaputra, T. Pongthavornkamol,
More informationHighly Linear GaN Class AB Power Amplifier Design
1 Highly Linear GaN Class AB Power Amplifier Design Pedro Miguel Cabral, José Carlos Pedro and Nuno Borges Carvalho Instituto de Telecomunicações Universidade de Aveiro, Campus Universitário de Santiago
More informationPrepared for the Engineers of Samsung Electronics RF transmitter & power amplifier
Prepared for the Engineers of Samsung Electronics RF transmitter & power amplifier Changsik Yoo Dept. Electrical and Computer Engineering Hanyang University, Seoul, Korea 1 Wireless system market trends
More informationGallium Nitride MMIC Power Amplifier
Gallium Nitride MMIC Power Amplifier August 2015 Rev 4 DESCRIPTION AMCOM s is an ultra-broadband GaN MMIC power amplifier. It has 21dB gain, and >41dBm output power over the 0.03 to 6GHz band. This MMIC
More informationNOT FOR NEW DESIGNS SGA5386Z. Absolute Maximum Ratings MHz. Parameter Rating Unit. Typical Performance at Key Operating Frequencies
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationLeveraging High-Accuracy Models to Achieve First Pass Success in Power Amplifier Design
Application Note Leveraging High-Accuracy Models to Achieve First Pass Success in Power Amplifier Design Overview Nonlinear transistor models enable designers to concurrently optimize gain, power, efficiency,
More informationRF2162 3V 900MHz LINEAR AMPLIFIER
3V 900MHz LINEAR AMPLIFIER Package Style: QFN, 16-Pin, 4x4 Features Single 3V Supply 9dBm Linear Output Power 9dB Linear Gain 35% Linear Efficiency Onboard Power Down Mode 800MHz to 960MHz Operation Applications
More information30 MHz to 6 GHz RF/IF Gain Block ADL5611
Data Sheet FEATURES Fixed gain of 22.2 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 4. dbm at 9 MHz P1dB
More informationRF2044A GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant and Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 18.5dB Small Signal Gain @ 2GHz 4.0dB Noise
More informationA Survey of Load Pull Simulation Capabilities How do they Help You Design Power Amplifiers?
A Survey of Load Pull Simulation Capabilities How do they Help You Design Power Amplifiers? Agilent EEsof EDA IMS 2010 MicroApps Andy Howard Agilent Technologies 1 Outline Power amplifier design questions
More informationMeasured RF Performance Summary
Summary Application Note The AP603 is a high dynamic range power amplifier in a lead-free/rohs-compliant 5x6mm power DFN SMT package. It features an internal active-bias circuit that provides temperature
More informationRF2126. RoHS Compliant & Pb-Free Product Typical Applications 2.5GHz ISM Band Applications
0 RF6 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Typical Applications.5GHz ISM Band Applications Commercial and Consumer Systems Digital Communication Systems Portable Battery-Powered
More informationFifth-generation (5G)
Raising the Levels of 5G Millimeter-Wave Signals Fifth-generation (5G) wireless network technology is being touted as the true next generation of wireless communications, capable of performance levels
More informationSGA7489Z DC to 3000MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK
DC to 3MHz Silicon Germanium HBT Cascadable Gain Block SGA7489Z DC to 3MHz SILICON GERMANIUM HBT CASCADABLE GAIN BLOCK Package: SOT-89 Product Description The SGA7489Z is a high performance SiGe HBT MMIC
More informationA 5 dbm 400MHz OOK Transmitter for Wireless Medical Application
INTL JOURNAL OF ELECTRONICS AND TELECOMMUNICATIONS, 2014, VOL. 60, NO. 2, PP. 193 198 Manuscript received March 10, 2014; revised June, 2014. DOI: 10.2478/eletel-2014-0024 A 5 dbm 400MHz OOK Transmitter
More informationSGA4586Z DC to 4000MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER
DC to 4MHz, Cascadable SiGe HBT MMIC Amplifier DC to 4MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More information30 MHz to 6 GHz RF/IF Gain Block ADL5610
Data Sheet FEATURES Fixed gain of 18.4 db Broad operation from 3 MHz to 6 GHz High dynamic range gain block Input and output internally matched to Ω Integrated bias circuit OIP3 of 38.8 dbm at 9 MHz P1dB
More informationAbsolute Maximum Ratings Parameter Rating Unit Drain Voltage (V D ) 150 V Gate Voltage (V G ) -8 to +2 V Gate Current (I G ) 8 ma Operational Voltage
10W GaN ON SIC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 4GHz Advanced GaN HEMT Technology Packaged Small Signal Gain=19dB at 2GHz 48V Typical Performance Output Power: 16W at
More information2.4 GHz Front-End Module SST12LF01
FEATURES: Gain: Typically 12 db gain across 2.4 2.5 GHz for Receiver (RX) chain. Typically 29 db gain across 2.4 2.5 GHz over temperature C to +8 C for Transmitter (TX) chain. Low-Noise Figure Typical
More informationRF2044 GENERAL PURPOSE AMPLIFIER
GENERAL PURPOSE AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: Micro-X Ceramic Features DC to >6000MHz Operation Internally matched Input and Output 20dB Small Signal Gain 4.0dB Noise Figure
More informationCalifornia Eastern Laboratories
California Eastern Laboratories AN143 Design of Power Amplifier Using the UPG2118K APPLICATION NOTE I. Introduction Renesas' UPG2118K is a 3-stage 1.5W GaAs MMIC power amplifier that is usable from approximately
More informationRF2420. Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators
RF2420 PROGRAMMABLE ATTENUATOR Typical Applications Power Control in Communication Systems CMOS Compatible Programmable Attenuators Commercial and Consumer Systems Portable Battery-Powered Equipment Product
More information2.4~2.5 GHz 1 Watt Power Amplifier Pin Details
2.~2. GHz Watt Power Amplifier 23.7. is a linear, two-stages power amplifier MMIC with high output power in 2.GHz band utilizing InGaP/GaAs HBT process. With the excellent linearity performance, the device
More informationDesign of a 0.7~3.8GHz Wideband. Power Amplifier in 0.18-µm CMOS Process. Zhiyuan Li, Xiangning Fan
Applied Mechanics and Materials Online: 2013-08-16 ISSN: 1662-7482, Vol. 364, pp 429-433 doi:10.4028/www.scientific.net/amm.364.429 2013 Trans Tech Publications, Switzerland Design of a 0.7~3.8GHz Wideband
More informationGaN Power Amplifiers for Next- Generation Wireless Communications
GaN Power Amplifiers for Next- Generation Wireless Communications Jennifer Kitchen Arizona State University Students: Ruhul Hasin, Mahdi Javid, Soroush Moallemi, Shishir Shukla, Rick Welker Wireless Communications
More information= 35 ma (Typ.) Frequency (GHz)
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-486(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-486
More informationLNA VCC RX OUT TX IN VREG. Product Description. Ordering Information. Standard 25 piece bag Standard 2500 piece reel. GaAs HBT GaAs MESFET InGaP HBT
2.4GHz TO 2.5GHz, 802.11b/g/n SINGLE-BAND FRONT END MODULE Package Style: QFN, 16-pin, 3.0 x 3.0 x 0.5 mm LNA EN C RX C TX BT 16 15 14 13 Features Single Module Radio Front- End Single Supply Voltage 3.0V
More informationSGA2386ZDC to 5000MHz, Cascadable. SiGe HBT. MMIC Amplifier. Frequency (GHz) 2800 MHz >10dB 97 C/W
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER Package: SOT-86 Product Description The is a high performance SiGe HBT MMIC Amplifier. A Darlington configuration
More informationSimulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology
Simulations of High Linearity and High Efficiency of Class B Power Amplifiers in GaN HEMT Technology Vamsi Paidi, Shouxuan Xie, Robert Coffie, Umesh K Mishra, Stephen Long, M J W Rodwell Department of
More informationRF2126 HIGH POWER LINEAR AMPLIFIER
RF16High Power Linear Amplifier RF16 HIGH POWER LINEAR AMPLIFIER RoHS Compliant & Pb-Free Product Package Style: SOIC-8 Slug Features Single 3V to 6.0V Supply 1.3W Output Power 1dB Gain 45% Efficiency
More informationFrequency (GHz) 5000 MHz
DC to 5MHz, Cascadable SiGe HBT MMIC Amplifier SGA-86(Z) DC to 5MHz, CASCADABLE SiGe HBT MMIC AMPLIFIER RFMD Green, RoHS Compliant, Pb-Free (Z Part Number) Package: SOT-86 Product Description The SGA-86
More informationIEEE Topical Symposium on Power Amplifiers for Wireless Communications: Matthew Poulton, David Aichele, Jason Martin 9/15/2009
IEEE Topical Symposium on Power Amplifiers for Wireless Communications: A Compact L Band GaN based 500W Power Amplifier Session 6: Base station, High Power Amplifiers Matthew Poulton, David Aichele, Jason
More informationHigh Power Wideband AlGaN/GaN HEMT Feedback. Amplifier Module with Drain and Feedback Loop. Inductances
High Power Wideband AlGaN/GaN HEMT Feedback Amplifier Module with Drain and Feedback Loop Inductances Y. Chung, S. Cai, W. Lee, Y. Lin, C. P. Wen, Fellow, IEEE, K. L. Wang, Fellow, IEEE, and T. Itoh, Fellow,
More informationTechnical Article A DIRECT QUADRATURE MODULATOR IC FOR 0.9 TO 2.5 GHZ WIRELESS SYSTEMS
Introduction As wireless system designs have moved from carrier frequencies at approximately 9 MHz to wider bandwidth applications like Personal Communication System (PCS) phones at 1.8 GHz and wireless
More informationApplication Note 5468
GA-43228 High Linearity Wireless Data Power Amplifier for 2.3 to 2.5 GHz Applications Application Note 5468 Introduction This application note describes the GA-43228 power amplifier and gives actual performance
More informationCMOS Design of Wideband Inductor-Less LNA
IOSR Journal of VLSI and Signal Processing (IOSR-JVSP) Volume 8, Issue 3, Ver. I (May.-June. 2018), PP 25-30 e-issn: 2319 4200, p-issn No. : 2319 4197 www.iosrjournals.org CMOS Design of Wideband Inductor-Less
More informationAmplifier Configuration
Dual CATV Broadband High Linearity SiGe HBT Amplifier CGA-33Z DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP- Product Description RFMD s CGA-33Z is a high performance Silicon Germanium
More informationA 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation
A 2.4-GHz 24-dBm SOI CMOS Power Amplifier with Fully Integrated Output Balun and Switched Capacitors for Load Line Adaptation Francesco Carrara 1, Calogero D. Presti 2,1, Fausto Pappalardo 1, and Giuseppe
More informationCMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC
CMOS 2.4GHZ ZIGBEE/ISM TRANSMIT/RECEIVE RFeIC Description 17 1 2 3 4 TXRX VDD VDD D 16 15 14 13 12 11 10 ANT 9 The is a fully integrated, single-chip, single-die RFeIC (RF Front-end Integrated Circuit)
More informationHigh efficiency linear
From April 2011 High Frequency Electronics Copyright 2011 Summit Technical Media, LLC An Outphasing Transmitter Using Class-E PAs and Asymmetric Combining: Part 1 By Ramon Beltran, RF Micro Devices; Frederick
More informationNI AWR Design Environment Load-Pull Simulation Supports the Design of Wideband High-Efficiency Power Amplifiers
Design NI AWR Design Environment Load-Pull Simulation Supports the Design of Wideband High-Efficiency Power Amplifiers The design of power amplifiers (PAs) for present and future wireless systems requires
More informationRECENT MOBILE handsets for code-division multiple-access
IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, VOL. 55, NO. 4, APRIL 2007 633 The Doherty Power Amplifier With On-Chip Dynamic Bias Control Circuit for Handset Application Joongjin Nam and Bumman
More information10 W, GaN Power Amplifier, 2.7 GHz to 3.8 GHz HMC1114
9 13 16 FEATURES High saturated output power (PSAT): 41.5 dbm typical High small signal gain: db typical High power gain for saturated output power:.5 db typical Bandwidth: 2.7 GHz to 3.8 GHz High power
More informationCMX902 RF Power Amplifier
CML Microcircuits COMMUNICATION SEMICONDUCTORS RF Power Amplifier Broadband Efficient RF Power Amplifier October 2017 DATASHEET Provisional Information Features Wide operating frequency range 130MHz to
More informationMECGaNC30. 4 to 6 GHz GaN HEMT Power Amplifier. Main Features. Product Description. Applications
Main Features 0.25µm GaN HEMT Technology 4.1 5.9 GHz full performances Frequency Range W Output Power @ Pin 27.5 dbm 37% PAE @ Pin 27.5 dbm % PAE @ Pout Watt 27 db Small Signal Gain Product Description
More informationECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya Popovic, University of Colorado, Boulder
ECEN 5014, Spring 2009 Special Topics: Active Microwave Circuits Zoya opovic, University of Colorado, Boulder LECTURE 3 MICROWAVE AMLIFIERS: INTRODUCTION L3.1. TRANSISTORS AS BILATERAL MULTIORTS Transistor
More informationCHAPTER 3 CMOS LOW NOISE AMPLIFIERS
46 CHAPTER 3 CMOS LOW NOISE AMPLIFIERS 3.1 INTRODUCTION The Low Noise Amplifier (LNA) plays an important role in the receiver design. LNA serves as the first block in the RF receiver. It is a critical
More information