Plastic SO-16 Package. Pin Configuration 16 V CC L. 15 RF out 14 GROUND 13 GROUND. 12 I ref. 11 I mod 10 GROUND 9 DO NOT CONNECT

Transcription

1 Silicon Bipolar RFI 9 MHz Vector Modulator Technical Data HPMX-3 Features 1 MHz Output Frequency Range + dbm Peak P out Unbalanced Ω Output Internal 9 Phase Shifter Volt, 3 ma Bias SO-1 Surface Mount Package Applications Direct Modulator for 9 MHz ellular Telephone Handsets, Including GSM, JD, and NAD Direct Modulator for 9 MHz ISM Band Spread- Spectrum Transmitters and LANs Functional Block Diagram Plastic SO-1 Package Pin onfiguration V 1 1 V L V 1 RF out GROUND 3 1 GROUND GROUND 13 GROUND Q ref 1 I ref Q mod 11 I mod LO in 7 1 GROUND LO gnd 9 DO NOT ONNET Description Hewlett Packard s HPMX-3 is a Silicon RFI direct conversion vector modulator designed for use at output frequencies between MHz and 1 GHz. Housed in a SO-1 surface mount plastic package, the I contains two matched Gilbert cell mixers, an R phase shifter, a summer, and an output amplifier complete with Ω impedance match and D block. This device is suitable for use in direct and offset-loop modulated portable and mobile telephone handsets for cellular systems such as GSM, North American Digital ellular and Japan Digital ellular. It can also be used in digital transmitters operating in the 9 MHz ISM (Industrial-Scientific-Medical) band, including use in Local Area Networks (LANs). I mod I ref LO + LO φ 9 I MIXER PHASE SHIFTER Σ SUMMER OUTPUT AMPLIFIER V V L RF out Ω Z O unbalanced The HPMX-3 is fabricated with Hewlett-Packard s GHz ISOSAT-II process, which combines stepper lithography, ion-implantation, self-alignment techniques, and gold metallization to produce RFIs with superior performance, uniformity and reliability. Q ref Q mod Q MIXER 9-913E 7-3

2 HPMX-3 Absolute Maximum Ratings, T A = Absolute Symbol Parameter Units Maximum [1] P diss Power Dissipation [,3] mw LO in LO Input Power dbm 1 V Supply Voltage V 1 V Imod, Swing of V Imod about V [] Iref V p-p [] V Qmod or V Qmod about V Qref V Iref, V Qref Reference Input Levels [] V [] T STG Storage Temperature - to +1 T j Junction Temperature 1 Thermal Resistance [] : θ jc =1 /W Notes: 1. Operation of this device above any one of these parameters may cause permanent damage.. T = (T is defined to be the temperature at the end of pin 3 where it contacts the circuit board). 3. Derate at mw/ for T >.. Do not exceed V by more than. V. HPMX-3 Guaranteed Electrical Specifications, T A =, Z O = Ω V = V, LO= -1 dbm at 9 MHz (Unbalanced Input), V Iref = V Qref =. V (Unless Otherwise Noted). Symbol Parameters and Test onditions Units Min. Typ. Max. I d Device urrent ma 3 P out Output Power V Imod = V Qmod = 3.7 V dbm +. + LO leak P out - LO at Output V Imod = V Qmod =. V dbc ε mod Average (V Imod -.) + (V Qmod -.) = 1. V % 7 Modulation Error HPMX-3 Summary haracterization Information, T A =, Z O = Ω V = V, LO = -1 dbm at 9 MHz (Unbalanced Input), V Iref = V Qref =. V (Unless Otherwise Noted). Symbol Parameters and Test onditions Units Typ. R in Input Resistance (I mod to I ref or Q mod to Q ref ) Ω 1 k R in-gnd Input Resistance to Ground (Any I, Q Pin to Ground) Ω 1 k VSWR LO LO VSWR ( Ω) GSM: 9-91 MHz Bandwidth 1.:1 NAD: - MHz Bandwidth 1.:1 JD: 9-9 MHz Bandwidth 1.:1 VSWR O Output VSWR ( Ω) (Tuned by GSM: 9-91 MHz Bandwidth 1.:1 Placement of V ccl apacitor NAD: - MHz Bandwidth 1.1:1 See Figures, 3, and ) JD: 9-9 MHz Bandwidth 1.:1 Output Noise Floor V Imod = V Qmod = 3.7 V dbm/hz -13 IM 3 DSB Third Order Intermodulation Products dbc +3 A i RMS Amplitude Error db.3 P i RMS Phase Error degrees 7-39

3 HPMX-3 Pin Description V (pins 1,) These two pins provide D power to the mixers in the RFI, and are connected together internal to the package. They should be connected to a V supply, with appropriate A bypassing (1 pf typ.) used near the pins, as shown in figures 1 and. The voltage on these pins should always be kept at least. V more positive than the D level on any of pins,, 11, or 1. Failure to do so may result in the modulator drawing sufficient current through the data or reference inputs to damage the I. Ground (pins 3,, 1, 13 & 1) These pins should connect with minimal inductance to a solid ground plane (usually the backside of the P board). Recommended assembly employs multiple plated through via holes where these leads contact the P board. lar performance. The recommended level of unbalanced I and Q signals is. V p-p with an average level of. V above ground. The reference pins should be D biased to this average data signal level (V / or. V typ.). For single ended drive, pins and 1 can be tied together. For balanced operation,. V p-p signals may be applied across the I mod /I ref and the Q mod /Q ref pairs. The average level of all four signals should be about. V above ground. The impedance between any I or Q and ground is typically 1 K Ω and the impedance between I mod and I ref or Q mod and Q ref is typically 1 KΩ. The input bandwidth typically exceeds MHz. It is possible to reduce LO leakage through the I by applying slight D imbalances between I mod and I ref and/or Q mod and Q ref (see section entitled HPMX-3 Using Offsets to Improve Lo Leakage ). All performance data shown on this data sheet was taken with unbalanced I/Q inputs. LO Input (pins 7 and ) The LO input of the HPMX-3 is balanced and matched to For drive from an unbalanced LO, pin 7 should be A coupled to the LO I ref (pin 1) and Q ref (pin ), I (pin 11) and Q (pin ) Inputs The I and Q inputs are designed for unbalanced operation but can be driven differentially with simiusing a Ω transmission line and a blocking capacitor (1 pf typ.), and pin should be A grounded (1 pf capacitor typ.), as shown in figure 1. For drive from a balanced LO source, Ω transmission lines and blocking capacitors (1 pf typ.) are used on both pins 7 and, as shown in figure. The internal phase shifter allows operation from - 1 MHz. The recommended LO input level is -1 dbm. All performance data shown on this data sheet was taken with unbalanced LO operation. RF Output (pin1) The RF output of the HPMX-3 is configured for unbalanced operation. The output is internally D blocked and matched to Ω, so a simple Ω microstrip line is all that is required to connect the modulator to other circuits. V L (pin 1) Pin 1 is the V input for the output stage of the I. It is not internally connected to the other V pins. The external connection allows the addition of a small inductor ( - nh) to tune the output for minimum VSWR, depending upon the operating frequency. 1 pf + V 1 pf 1 pf + V 1 pf 1 1 OPTIONAL INDUTOR 1 1 OPTIONAL INDUTOR 1 RF out 1 RF out Q ref 1 I ref Q ref 1 I ref LO in Q mod 1 pf 1 pf I mod DO NOT ONNET LO in + LO in Q mod 1 pf 1 pf Imod DO NOT ONNET Figure 1. HPMX-3 onnections Showing Unbalanced LO and I, Q Inputs. Figure. HPMX-3 onnections Showing Balanced LO and I, Q Inputs. 7-

4 HPMX-3 Typical Data Measurement Direct measurement of the amplitude and phase error at the output is an accurate way to evaluate modulator performance. By measuring the error directly, all the harmonics, LO leakage, etc. that show up in the output signal are accounted for. Figure 3, below, shows the test setup that was used to create the amplitude and phase error plots (figures 1 and 13). Amplitude and phase error are measured by using the four channel power supply to simulate I and Q input signals. Real. V p-p I and Q signals would swing 1. volts above and below an average. V level, therefore, a high level input is simulated by applying 3.7 V, and a low level by applying 1. V to the I and/or Q inputs. Amplitude and phase are measured by setting the network analyzer for an S 1 measurement at frequency of choice. Set the port 1 stimulus level to the LO level you intend to use in your circuit (-1 dbm for the data sheet). A -1 db attenuator can be placed in the line to port to prevent network analyzer overload, depending upon the network analyzer you are using. By adjusting the V Imod and V Qmod settings you can step around the I, Q vector circle, reading magnitude and phase at each point. The relative values of phase and amplitude at the various points will indicate the accuracy of the modulator. Note: you must use very low ripple power supplies for the reference, V Imod, and V Qmod supplies. Ripple or noise of only a few millivolts will appear as wob- bling phase readings on the network analyzer. The same test setup shown below is used to measure input and output VSWR, reverse isolation, and power vs. frequency. V Imod and V Qmod are set to 3.7 V and the appropriate frequency ranges are swept. S 11 provides input VSWR data, S provides output VSWR data. S 1 provides power output (add source power to S 1 derived gain). LO leakage data shown in figures 1, and 19 is generated by setting V Imod = V Qmod = V Iref = V Qref =. V then performing an S 1 sweep. Since phase is not important for these measurements, a scalar network analyzer or a signal generator and spectrum analyzer could be used. HP-73 VETOR NETWORK ANALYZER PORT 1 PORT V V Qmod VER 1 LO Q R HP-A SYSTEM D POWER SUPPLY (FOUR OUTPUTS) HPMX-3/ H V V OUT. V V Imod I R Figure 3. Test Setup for Measuring Amplitude and Phase Error, Input and Output VSWR, Power Output and LO Leakage of the Modulator. 7-1

5 HPMX-3 Typical Performance DEVIE URRENT (ma) DEVIE URRENT (ma) TEMPERATURE ( ) Figure. HPMX-3 Device urrent vs. Temperature, V = V. V (VOLTS) Figure. HPMX-3 Device urrent vs. V, T A = V 3.7 V V 3. V.7 V TEMPERATURE ( ) Figure. HPMX-3 Power Output vs. Temperature at 9 MHz, LO = -1 dbm, V Imod = V Qmod = 3.7 V, V Iref = V Qref =. V, V = V. V (VOLTS) Figure 7. HPMX-3 Power Output vs. V and I, Q Level at 9 MHz, LO = -1 dbm, V Imod = V Qmod, T A =. LO INPUT POWER (dbm) Figure. HPMX-3 Power Output vs. LO Level at 9 MHz, V = V, V Imod = V Qmod = 3.7 V, T A =. :1 :1 :1 :1 :1 1.:1 INPUT VSWR 3:1 OUTPUT VSWR 3:1 OUTPUT VSWR 1.:1 1.:1 :1 - :1-1.:1 1: : :1.. FREQUENY (MHz) Figure 9. HPMX-3 LO Input VSWR vs. Frequency and Temperature, V = V. FREQUENY (MHz) Figure 1. HPMX-3 Output VSWR vs. Frequency and Temperature. 7- V (VOLTS) Figure 11. HPMX-3 Output VSWR vs. V at 9 MHz, T A =.

6 HPMX-3 Modulation Accuracy (Sample Part) 1 OUTPUT AMPLITUDE ERROR (db) Figure 1. HPMX-3 Amplitude Error vs. Input Phase at 9 MHz, V = V, (V Imod -.) + (V Qmod -.) = 1. V, LO = -1 dbm. urve Deleted for larit y. OUTPUT PHASE ERROR (DEGREES) Figure 13. HPMX-3 Output Phase Error vs. Input Phase at 9 MHz, V = V, (V Imod -.) + (V Qmod -.) = 1. V, LO = -1 dbm. urve Deleted for larity. OUTPUT MODULATION ERROR (%) Figure 1. Modulation Error vs. Input Phase at 9 MHz, V = V, (V Imod -.) + (V Qmod -.) = 1. V, LO = -1 dbm. Percent Modulation Error is alculated from the Values of Amplitude and Phase Error. 7-3

7 HPMX-3 Single and Double Sideband Performance Single sideband (SSB) and double sideband (DSB) tests are sometimes used to evaluate modulator performance. Figure 17, below, shows the test equipment setup that was used to create the SSB and DSB output spectrum graphs (figures 1 and 1). The phase shift provided by the I and Q signal generators must be very close to 9 degrees and the amplitude of the two signals must be matched within a few millivolts or results will not accurately reflect the performance of the modulator I. The I, Q signal generator must put out low distortion signals or the output spectrum will show high harmonic levels that reflect the performance of the signal generator, not the modulator. HPMX-3 Typical Sideband Performance Data SSB: V Iref = V Qref =. V, V Imod = V Iref +1. sin (π f t), V Qmod = V Qref + 1. cos (π f t), f = khz DSB: V Iref = V Qref =. V, V Imod = V Iref +1. cos (π f t), V Qmod = V Qref + 1. cos (π f t), f = khz Symbol Parameters and Test onditions Units SSB DSB P LSB Lower Sideband Power Output dbm +3 LO leak LO Suppression dbc 3 31 P USB Upper Sideband Power Output dbm -3 IM 3 Third Order Intermodulation Products dbm NA FREQUENY (MHz) Figure 1. Single Sideband Output Spectrum. LO = -1 dbm at 9 MHz. The Test Setup is Shown in Figure 1 7. FREQUENY (MHz) Figure 1. Double Sideband Output Spectrum. LO = -1 dbm at 9 MHz. The Test Setup is Shown in Figure 1 7. HP-7B SYNTHESIZED SIGNAL GENERATOR OS HP-3A UNIVERSAL SOURE OPT 1 DUAL OUTPUTS WITH 9 DEGREE RELATIVE PHASE SHIFT VER 1 HPMX-3/ H LO Q R V V OUT HP-A SYSTEM D POWER SUPPLY SIN DSB I R SSB HP-9A SPETRUM ANALYZER Figure 17. HPMX-3 Single/Double Sideband Test Setup. 7-

8 HPMX-3 Using Offsets to Improve LO Leakage It is possible to improve on the excellent performance of the HPMX-3 for applications that are particularly sensitive to LO leakage. The nature of the improvement is best understood by examining figures 1 and 19, below. LO leakage results when normal variations in the wafer fabrication process cause small shifts in the values of the modulator I s internal components. These random variations create an effect equivalent to slight D imbalances at the input of each (I and Q) mixer. The D imbalances at the mixer inputs are multiplied by ± 1 at the LO frequency and show up at the output of the I as LO leakage. It is possible to externally apply small D signals to the I and Q inputs and exactly cancel the internally generated D offsets. This will result in sharply decreased LO leakage at precisely the frequency and temperature where the offsets were applied (see figure 1). This improvement is not very useful if it doesn t hold up over frequency and temperature changes. The lower curve in figure 1 shows how the offset-adjusted LO leakage varies versus frequency. Note that it remains below - dbm over most of the frequency range shown. In the MHz range centered at 9 MHz, the level is closer to - dbm. Figure 19 shows the performance of the offset adjusted LO leakage over temperature. Note that the adjusted curve is at a level below - dbm over most of the temperature range. The net result of using externally applied offsets with the HPMX-3 is that an LO leakage level below - dbm can typically be achieved over both frequency and temperature. The magnitude of the required external offset varies randomly from part to part and between the I and Q mixers on any given I. Offsets can range from - mv to + mv. External offsets may be applied either by varying the average level of the I and Q modulating signals, or by varying the voltages at the I ref and Q ref pins of the modulator TEMPERATURE ( ) Figure 1. LO Leakage vs. Frequency Without D Offsets (Upper urve) and LO Leakage vs. Frequency With D Offsets (Adjusted for Minimum LO Leakage at 9 MHz). T A =, V = V, V Iref = V Qref =. V, LO = -1 dbm. FREQUENY (MHz) Figure 19. LO Leakage With No D Offsets vs. Temperature (Upper urve) and LO Leakage With D Offsets (Adjusted for Minimum Leakage at ) vs. Temperature (Lower urve). Frequency = 9 MHz, V = V, V Iref = V Qref =. V, LO = -1 dbm. 7-

9 HPMX-3 Modulation Spectrum Diagrams Figure, below, shows the test setup that was used to generate the modulation spectrum diagrams that appear on the GSM, JD and NAD applications pages of this data sheet. The major differences between the tests are summarized in the table below. The modulation spectra are created by setting the function generator to the appropriate bit-clock frequency. The pattern generator is set to produce a pseudorandom serial bit stream (n = ) that is NRZ coded. The pseudorandom bit stream which simulates the serial data in a digital phone is fed to the base-band processor that splits it into a two bit parallel stream (I and Q) and then filters each according to the requirements of the digital telephone system being simulated. The I and Q signals from the baseband filter are then D offset by. V using the op-amp circuit. The output of the modulator is monitored using a spectrum analyzer. System Bit lock Frequency Baseband Filter hannel (LO) Frequency GSM 7 khz.3 GMSK (HP 7B) 9 MHz JD khz α =. π/ DQPSK (HP 7D) 9 MHz NAD. khz α =.3 π/ DQPSK (HP 7D) 3 MHz 1 I ref R HPMX-3/ H VER 1 HP-7B SIGNAL GENERATOR 3-9 MHz HP-3E SPETRUM ANALYZER OUT LO Q R Q ref V V HP-331A FUNTION GENERATOR Q +. V π/dqpsk Q INPUT + V + HP-37A PRBS GENERATOR Qref =. V LOK DATA ALL R = k OP-AMP: TL- I HANNEL IS IDENTIAL HP-7B OR HP-7D BASEBAND PROESSOR I Q OP-AMP IRUIT (SEE ABOVE) I +. V TO 1. V TO I ref Q +. V TO. V TO Q ref Figure. Test Equipment Setup for Modulation Spectrum Diagrams. 7-

10 HPMX-3 GSM Applications The GSM System GSM (Group Speciale Mobile) commonly refers to the European digital cellular telephone system standard. Digital cellular phones for the European market must conform to this standard. The GSM system is characterized by khz channel spacing and mobile to base transmit frequencies of 9-91 MHz. The primary modulation characteristics include.3 GMSK filtering of the I and Q signals and 7 kbps transmission rate. ritical Performance Parameters GSM standards require that the telephone exhibit RMS phase error and peak phase error <. The modulated output spectrum of the phone must lie within a spectral mask which defines maximum allowable radiation levels into adjacent and alternate channels. Specifically, khz from the channel center frequency (f ), the output of the phone must be at least 3 db below the peak output at f. khz from f the output must be - db below the peak output at f depending upon the class of radio. Refer to the GSM9 specifi-cations for more detailed information. HPMX-3 Performance Typical RMS phase error level of and typical peak levels of makes the HPMX-3 an excellent choice for GSM applications. The output spectrum falls easily within the GSM spectral mask, and the high power and simple output configuration mean lower components count, reduced size and higher system efficiency. Particulars of Use Many of the GSM application performance graphs shown in this data sheet were created using the test board shown in figure 1, below. The only external components required by this I are four chip capacitors. One capacitor is used as a D block on the input transmission line. The second capacitor (at pin ) provides an A ground to one side of the differential LO input. The third and fourth capacitors (at pins 1 and 1) are for V bypass. The circuit board includes an inductive trace that can optionally be used to minimize output VSWR by placing a bypass capacitor at various points along the inductive line. Minimum VSWR for GSM applications is achieved by placing the capacitor as shown in the circle (inductance nh). The I has an internal blocking capacitor so the output is a simple Ω transmission line. An enlarged scale layout of the test board can be found on the last page of this data sheet. VER. 1 LO Q R HPMX-3/ H V V OUT I R Figure 1. HPMX-3 GSM Test Board. 7-7

11 HPMX-3 Typical Performance Data GSM Applications VBW = 3 Hz SWP =. SE. VBW = 3 Hz SWP =. SE. VBW = 3 Hz SWP =. SE. RF - RF - RF FREQUENY (MHz) FREQUENY (MHz) FREQUENY (MHz) Figure. HPMX-3 GSM Modulation Spectrum at -. Figure 3. HPMX-3 GSM Modulation Spectrum at. Figure. HPMX-3 GSM Modulation Spectrum at. :1 OUTPUT VSWR 1.7:1 7 POWER > 1.:1 1.:1 < VSWR 1: FREQUENY (MHz) Figure. HPMX-3 Output VSWR and Power vs. Frequency, V = V, LO = -1 dbm, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A =. FREQUENY (MHz) Figure. HPMX-3 LO Leakage vs. Frequency and Temperature (Without Offset Adjustment), V = V, LO = -1 dbm, V Imod = V Qmod = V Iref = V Qref =. V. FREQUENY (MHz) Figure 7. LO leakage vs. Frequency and Temperature (With Offset Adjustment), V = V, LO = -1 dbm, V Iref = V Qref =. V. 1 OUTPUT AMPLITUDE ERROR (db) OUTPUT PHASE ERROR (DEGREES) LO INPUT POWER (dbm) Figure. HPMX-3 Power Output vs. LO Input Power at 9 MHz, V = V, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A =. Figure 9. HPMX-3 Vector Amplitude Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, V Iref = V Qref =. V. =. V. Note: Modulation spectrum test conditions as follows: V = V, LO = -1 dbm at 9 MHz, V Imod = V Qmod =. V p-p, unbalanced, average level =. V, V Iref = V Qref =. V, bit clock rate: 7 khz, baseband filter: α =.3 GMSK. 7- Figure 3. HPMX-3 Vector Phase Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, Unbalanced, V Iref = V Qref

12 HPMX-3 NAD Applications The NAD System NAD (North American Digital ellular) commonly refers to the digital sections of the IS- cellular telephone system standard. Dual mode (FM/TDMA) cellular phones for the North American market must conform to this standard. The NAD system is characterized by 3 khz channel spacing and mobile to base transmit frequencies of - 9 MHz. The primary modulation characteristics include π/ DQPSK filtering of the I and Q signals and. kbps transmission rate. ritical Performance Parameters System specifications require that the telephone exhibit RMS modulation error under 1% in the digital mode. The modulated output spectrum of the phone must lie within a spectral mask which defines maximum allowable radiation levels into adjacent and alternate channels. Specifically, total power radiated into the either adjacent channel must be at least db below the mean output power. Total power radiated into either alternate channel must be at least db below the mean output power. Refer to the IS- specifications for more detailed information. HPMX-3 Performance The typical RMS modulation error level of % makes the HPMX-3 an excellent choice for NAD applications. The output falls easily within the NAD spectral requirements, and the high power and simple output configuration mean lower components count, reduced size and higher system efficiency. Particulars of Use Many of the NAD application performance graphs shown in this data sheet were created using the test board shown in figure 31, below. The only external components required by this I are four chip capacitors. One capacitor is used as a D block on the input transmission line. The second capacitor (at pin ) provides an A ground to one side of the differential LO input. The third and fourth capacitors (at pins 1 and 1) are for V bypass. The circuit board includes an inductive trace that can optionally be used to minimize output VSWR by placing a bypass capacitor at various points along the inductive line. Minimum VSWR for NAD applications is achieved by placing the capacitor as shown in the circle (inductance nh). The I has an internal blocking capacitor so the output is a simple Ω transmission line. An enlarged scale layout of the test board can be found on the last page of this data sheet. VER. 1 LO Q R HPMX-3/ H MR V V OUT I R Figure 31. HPMX-3 NAD Test Board. 7-9

13 HPMX-3 Typical Performance Data NAD Applications VBW = 3 Hz SWP = 9. SE. VBW = 3 Hz SWP = 9. SE. VBW = 3 Hz SWP = 9. SE. RF - RF - RF FREQUENY (MHz) Figure 3. HPMX-3 NAD Modulation Spectrum at -. FREQUENY (MHz) Figure 33. HPMX-3 NAD Modulation Spectrum at. FREQUENY (MHz) Figure 3. HPMX-3 NAD Modulation Spectrum at. :1 OUTPUT VSWR 1.7:1 1.:1 1.:1 1:1 1 3 POWER > < VSWR FREQUENY (MHz) Figure 3. HPMX-3 Output VSWR and Power vs. Frequency, V = V, LO = -1 dbm, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A = FREQUENY (MHz) Figure 3. HPMX-3 LO Leakage vs. Frequency and Temperature (Without Offset Adjustment), V = V, LO = -1 dbm, V Imod = V Qmod = V Iref = V Qref =. V FREQUENY (MHz) Figure 37. LO Leakage vs. Frequency and Temperature (With Offset Adjustment), V = V, LO = -1 dbm, V Iref = V Qref =. V. 1. OUTPUT AMPLITUDE ERROR (db) OUTPUT PHASE ERROR (DEGREES) LO INPUT POWER (dbm) Figure 3. HPMX-3 Power Output vs. LO Input Power at 9 MHz, V = V, LO = -1 dbm, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A =. Figure 39. HPMX-3 Vector Amplitude Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, V Iref = V Qref =. V. Figure. HPMX-3 Vector Phase Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, Unbalanced, V Iref = V Qref =. V. Note: Modulation spectrum test conditions as follows: LO = -1 dbm at 3 MHz, V I = V Q =. V p-p, unbalanced, average level =. V, V Iref = V Qref =. V, bit clock rate:. khz, baseband filter: α =.3, π/ DQPSK, V = V. 7-

14 HPMX-3 JD Applications The JD System JD (Japan Digital ellular) commonly refers to the Japanese digital cellular telephone system standard. Digital cellular phones for the Japanese market must conform to this standard. The JD system is characterized by khz channel spacing and mobile to base transmit frequencies of 9 9 MHz. The primary modulation characteristics include π/ DQPSK filtering of the I and Q signals and kbps transmission rate. ritical Performance Parameters JD standards require that the telephone exhibit RMS modulation error 1.%. The modulated output spectrum of the phone must lie within a spectral mask which defines maximum allowable radiation levels into adjacent and alternate channels. Specifically, khz from the channel center frequency (f ), the output of the phone must be at least db below the peak output at f. 1 khz from f, the output must be at least db below the peak output at f. Refer to the JD specifications for more detailed information. HPMX-3 Performance The typical RMS modulation error level of % makes the HPMX-3 an excellent choice for JD applications. The output spectrum falls easily within the JD spectral mask, and the high power and simple output configuration mean lower components count, reduced size and higher system efficiency. Particulars of Use Many of the JD application performance graphs shown in this data sheet were created using the test board shown in figure 1,below. The only external components required by this I are four chip capacitors. One capacitor is used as a D block on the input transmission line. The second capacitor (at pin ) provides an A ground to one side of the differential LO input. The third and fourth capacitors (at pins 1 and 1) are for V bypass. The circuit board includes an inductive trace that can optionally be used to minimize output VSWR by placing a bypass capacitor at various points along the inductive line. Minimum VSWR for JD applications is achieved by placing the capacitor as shown in the circle (inductance nh). The I has an internal blocking capacitor so the output is a simple Ω transmission line. An enlarged scale layout of this board can be found on the last page of this data sheet. VER. 1 LO Q R HPMX-3/ H V V OUT I R Figure 1. HPMX-3 JD Test Board. 7-1

15 HPMX-3 Typical Performance Data RF - VBW = 3 Hz SWP = 7. SE. RF - VBW = 3 Hz SWP = 7. SE. JD Applications RF - VBW = 3 Hz SWP = 7. SE FREQUENY (MHz) FREQUENY (MHz) FREQUENY (MHz) Figure. HPMX-3 JD Modulation Spectrum at -. Figure 3. HPMX-3 JD Modulation Spectrum at. Figure. HPMX-3 JD Modulation Spectrum at. :1 OUTPUT VSWR 1.7:1 1.:1 1.:1 1:1 9 9 POWER > < VSWR 9 FREQUENY (MHz) Figure. HPMX-3 Output VSWR and Power vs. Frequency, V = V, LO = -1 dbm, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A = FREQUENY (MHz) 9 9 Figure. HPMX-3 LO Leakage vs. Frequency and Temperature (Without Offset Adjustment), V = V, LO = -1 dbm, V Imod = V Qmod = V Iref = V Qref =. V FREQUENY (MHz) 9 9 Figure 7. LO Leakage vs. Frequency and Temperature (With Offset Adjustment), V = V, LO = -1 dbm, V Iref = V Qref =. V. 1 OUTPUT AMPLITUDE ERROR (db) OUTPUT PHASE ERROR (db) LO INPUT POWER (dbm) Figure. HPMX-3 Power Output vs. LO Input Power at 9 MHz, V = V, V Imod = V Qmod = 3.7 V, Unbalanced, V Iref = V Qref =. V, T A =. Figure 9. HPMX-3 Vector Amplitude Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, Unbalanced, V Iref = V Qref =. V. Note: Modulation spectrum test conditions as follows: LO = -1 dbm at 9 MHz, V Imod = V Qmod =. V p-p, unbalanced, average level =. V, V Iref = V Qref =. V, bit clock rate: khz, baseband filter: α =., π/ DQPSK, V = V. 7- Figure. HPMX-3 Vector Phase Error vs. Input Phase and Temperature at 9 MHz, V = V, LO = -1 dbm, Unbalanced, V Iref = V Qref =. V.

16 F U o A E A J D HPMX-3 Part Number Ordering Information Part Number Option No. of Devices Reel Size HPMX-3 min. tube HPMX-3 T1 1 7" Package Dimensions SO-1 Package 9. (.3) 1. (.39) HPMX-3 Test Board Layout 1 pf + V 1 pf. (.11). (.) 1 1 PIN: (.1). (.1). (.). (.) OPTIONAL INDUTOR RF out (.). (.) Q ref 13 1 I ref. (.1). (.) 1.7 (.) TYP..3 (.1). (.1) LO in + Q mod 1 pf Imod.1 (.7). (.1) 1.3 (.3) 1.7 (.9). (.11). (.). (.).77 (.3) LO in 1 pf DO NOT ONNET Finished board size: 1." x 1" x 1/3" Material: 1/3" epoxy/fiberglass, 1 oz. copper, both sides, tin/lead coating, both sides. Note: white + marks indicate drilling locations for plated-through via holes to the groundplane on the bottom side of the board. 9 NOTE: DIMENSIONS ARE IN MILLIMETERS (INHES). 7-3 P