BipAK 2014 Experience of BE Tunneling current and BC Barrier effect with HICUM L2 v2.32

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1 1 BipAK 2014 Experience of BE Tunneling current and BC Barrier effect with HICUM L2 v2.32 Nicolas Derrier October 2014 ref. dm14.161

2 Outline 2 HICUM Level2 v2.32 Experience with Tunnel current Experience with BC Barrier effect Conclusion Q&A

3 PART 1: about BE Tunneling current Presentation Title 16/10/ 2014

4 BE Tunneling effect (1/6) 4 In recent HBT (strong doping levels in base and emitter so strong electric field), Tunneling current is visible in Base current IB measurements. At reverse mode AND at forward mode for low currents Advanced BiCMOS process HBT - Wafer mapping measurements BE Tunneling current SRH recombination or trap assisted current

5 BE Tunneling effect (2/6) 5 Tunneling current density based on electric field inside Base-Emitter (BE) junction, band-to-band tunneling current Electric field: SCR width: (see HICUM model documentation or S. Sze reference of 1981)

6 BE Tunneling effect (3/6) 6 Inside HICUM: 3 parameters IBETS (saturation current), ABET (exponent factor) and TUNODE (specifies the node co connect the current source) Choice with TUNODE = 0 or 1

7 BE Tunneling effect (4/6) 7 HICUM works fine in reverse mode, but the effect is not activated in forward mode low current Why? Is it possible to model forward mode also?? Advanced BiCMOS process HBT - Dots=meas. Lines=HICUM v2.32 simulation

8 BE Tunneling effect (5/6) 8 Inside HICUM v2.32 documentation: The above equation is based on a description of band-to-band tunneling, which dominates at reverse bias and becomes less accurate for a forward biased junction, i.e. if trap-assisted tunneling dominates.» Effect only at reverse mode in HICUM VA code-source: if (Vbpei < 0.0 Vbiei < 0.0) begin : HICTUN_T real a_eg,ab,aa; ab = 1.0; aa = 1.0; a_eg=vgbe_t0/vgbe_t; if(tunode==1 && cjep0 > 0.0 && vdep >0.0) begin ab = (cjep0_t/cjep0)*sqrt(a_eg)*vdep_t*vdep_t/(vdep*vdep); aa = (vdep/vdep_t)*(cjep0/cjep0_t)*pow(a_eg,-1.5); end else if (tunode==0 && cjei0 > 0.0 && vdei >0.0) begin ab = (cjei0_t/cjei0)*sqrt(a_eg)*vdei_t*vdei_t/(vdei*vdei); aa = (vdei/vdei_t)*(cjei0/cjei0_t)*pow(a_eg,-1.5); end ibets_t = ibets*ab; abet_t = abet*aa; end

9 BE Tunneling effect (6/6) Scaling of saturation current I bets proportional to emitter area and perimeter: I bets = J beats x A E0 + J bepts x P E0 9 Works fine! Effect probably more linked to perimeter (a few variation with W E variation, huge variation versus L E ) Advanced BiCMOS process HBT Measurements= dots Simulations = dashed lines Wmin, L scaling Wmin, L scaling Lmax, W scaling Wmin Lnominal, multi-fingers

10 PART 2: about BC Barrier effect Presentation Title 16/10/ 2014

11 BC Barrier effect (1/7) 11 In HBT, BC barrier the more visible when intrinsic collector is low doped (important RCi0 resistance) Typical case for medium-voltage or high-voltage HBTs (optimize BVCEO versus ft peak compromise) Pedestal oxide B in-situ doped SiGe:C Base As in-situ doped Emitter Silicide B doped Polybase Pedestal oxide B in-situ doped SiGe:C Base As in-situ doped Emitter Silicide B doped Polybase C B E B C C B E B C HS implant Shallow Trench Isolation (STI) Deep Trench Isolation (DTI) Buried Layer + Collector Epitaxy + HV implant Collector Sinker Shallow Trench Isolation (STI) Deep Trench Isolation (DTI) Collector Epitaxy + NISO + HV implant Collector Sinker Highly doped Low doped

12 BC Barrier effect (2/7) 12 Usually visible on Base current IB at high injection Advanced BiCMOS process HBT - Measurements Barrier effect

13 BC Barrier effect (3/7) 13 Until HICUM L2 v2.24, only TBHREC parameter to model IB recombination at the BC barrier, for high forward injection (high VBE) Homogen to a time constant ibhrec current source in // of ijbei Influences only DC base current characteristic (not AC) Total minority charge: Total transit time:

14 BC Barrier effect (4/7) 14 TBHREC works fine on base current at high injection Better to fit TBHREC on IB(VBE) in saturation mode (VBC>0) to avoid self-heating and see only Barrier effect Advanced BiCMOS process HBT - WE=0.20um LE=5um Measurements= dots Simulations = dashed lines BC barrier (TBHREC) BE current BC diode BE recombination BC barrier (TBHREC) ib vs VBE VBC=+0.5V (saturation) Normalized ib / exp(vbe/vt) vs VBE VBC=+0.5V (saturation)

15 BC Barrier effect (5/7) 15 Seems no scaling rule is needed for TBHREC usage? TBHREC=200ps whatever the geometry in the examples below Advanced BiCMOS process HBT Measurements= dots Simulations = dashed lines Wmin, L scaling Lmax, W scaling ib vs VBE VBC=+0.5V (saturation)

16 BC Barrier effect (6/7) 16 Since HICUM L2 v2.30: still IBHREC for additional base current source additional BC Barrier term inside charge and transit time (so plays with AC and not only DC) new parameters introduced for BC Barrier: ACBAR, ICBAR, VCBAR Total minority charge: Total transit time:

17 BC Barrier effect (7/7) 17 How to extract or fit ACBAR, ICBAR, VCBAR? Are they useful? since IB at high injection already covered with TBHREC parameter anb ibhrec current source AC characteristics don t seem to show BC barrier? And already well modeled without those BC Barrier new parameters VCBAR huge influence on ft+ic+ib!? (even if TBHREC is canceled = 0 ps) ft vs Vcbar from 0V to a few mv! ib vs VBE VBC=+0.5V (saturation)

18 Conclusion 18 BE Tunneling current Correctly modeled within HICUM at reverse mode only Scaling versus emitter area and perimeter OK Why no BE tunneling current at forward mode at low current? Possible to add it? When? BC Barrier effect Effect more and more visible with low doped intrinsic collector for HBT families MV or HV Correctly modeled within HICUM for base current DC characteristics at high injection (additional current source, parameter TBHREC) Since HICUM L2 v2.30, new BC Barrier components added within the total minority charge and transit time. New parameters VCBAR, ICBAR, ACBAR: interest compared to TBHREC? No way to play with them?! Huge influence with strange simulations for IB+IC+fT Your experience is welcome! Extraction or fit guidelines and explanations by TUD for those new parameters? How is BC barrier visible on AC characteristics measurements?

19 Questions and discussion? Presentation Title 16/10/ 2014

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