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1 Datasheetrchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative will respond to you with price and availability. Request For Quotation Your free datasheet starts on the next page. More datasheets and data books are available from our homepage: This datasheet has been downloaded from
2 SEMIONDUTOR TEHNIL DT The M14566 industrial time base generator is cotructed with MOS P channel and N channel enhancement mode devices in a single monolithic structure. This device coists of a divide by ripple counter and a divide by 5 or divide by 6 ripple counter to permit stable time generation from a 50 or 60 Hz line. y cascading this device as divide by 60 counters, seconds and minutes can be counted and are available in D format at the circuit outputs. n internal monostable multivibrator is included whose output can be used as a reset or clock pulse providing additional frequency flexibility. lso a pin has been included to allow divide by 5 counting for generating 1.0 Hz from European 50 Hz line. Pin = will cause 5. Negative Edge Triggered ounters for Ease of ascading Pulse Shapers on ounter Inputs ccept Slow Input Rise Times Monostable Multivibrator Positive or Negative Edge Triggered Diode Protection on ll Inputs Supply Voltage Range = 3.0 Vdc to 18 Vdc apable of Driving Two Low power TTL Loads or One Low power Schottky TTL Load Over the Rated Temperature Range MXIMUM RTINGS* (Voltages Referenced to VSS) Symbol Parameter Value Unit D Supply Voltage 0.5 to V Vin, Vout Input or Output Voltage (D or Traient) 0.5 to V Iin, Iout Input or Output urrent (D or Traient), per Pin ± m PD Power Dissipation, per Package 500 mw Tstg Storage Temperature 65 to + 0 TL Lead Temperature (8 Second Soldering) 260 * Maximum Ratings are those values beyond which damage to the device may occur. Temperature Derating: Plastic P and D/DW Packages: 7.0 mw/ From 65 To 125 eramic L Packages: 12 mw/ From 0 To 125 L SUFFIX ERMI SE 620 ORDERING INFORMTION M14XXXP M14XXXL M14XXXD Plastic eramic SOI T = 55 to 125 for all packages. PIN SSIGNMENT VSS P SUFFIX PLSTI SE 648 D SUFFIX SOI SE 751 5/6 LOK DIGRM 1 2 PULSE SHPER R D OUT ONTROL R 12 PULSE SHPER D OUT 7 9 MONO STLE MULTI VIRTOR REV 3 1/94 MOTOROL Motorola, Inc MOS LOGI DT M
3 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ELETRIL HRTERISTIS (Voltages Referenced to VSS) haracteristic Output Voltage Vin = or 0 Vin = 0 or 0 Level 1 Level Input Voltage 0 Level (VO = 4.5 or 0.5 Vdc) (VO = 9.0 or 1.0 Vdc) (VO = 13.5 or 1.5 Vdc) (VO = 0.5 or 4.5 Vdc) (VO = 1.0 or 9.0 Vdc) (VO = 1.5 or 13.5 Vdc) Output Drive urrent (VOH = 2.5 Vdc) (VOH = 4.6 Vdc) (VOH = 9.5 Vdc) (VOH = 13.5 Vdc) (VOL = 0.4 Vdc) (VOL = 0.5 Vdc) (VOL = 1.5 Vdc) 1 Level Source Sink Symbol VOL VOH VIL VIH IOH Vdc Min Max Min Typ # Max Min Max Unit IOL Input urrent Iin ±0.1 ± ±0.1 ±1.0 µdc Input apacitance (Vin = 0) in 7.5 pf Vdc Vdc Vdc Vdc mdc mdc Quiescent urrent (Per Package) Total Supply urrent** (Dynamic plus Quiescent, Per Package) (L = 50 pf on all outputs, all buffers switching) IDD IT IT = (1.0 µ/khz) f + IDD IT = (2.0 µ/khz) f + IDD IT = (3.0 µ/khz) f + IDD #Data labelled Typ is not to be used for design purposes but is intended as an indication of the I s potential performance. ** The formulas given are for the typical characteristics only at 25. To calculate total supply current at loads other than 50 pf: IT(L) = IT(50 pf) + (L 50) Vfk where: IT is in µ (per package), L in pf, V = ( VSS) in volts, f in khz is input frequency, and k = µdc µdc This device contai protection circuitry to guard agait damage due to high static voltages or electric fields. However, precautio must be taken to avoid applicatio of any voltage higher than maximum rated voltages to this high-impedance circuit. For proper operation, Vin and Vout should be cotrained to the range VSS (Vin or Vout). Unused inputs must always be tied to an appropriate logic voltage level (e.g., either VSS or ). Unused outputs must be left open. M MOTOROL MOS LOGI DT
4 ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ SWITHING HRTERISTIS* (L = 50 pf, T = 25 ) Output Rise and Fall Time ttlh, tthl = (1.5 /pf) L + 25 ttlh, tthl = (0.75 /pf) L ttlh, tthl = (0.55 /pf) L Propagation Delay Time, lock to tplh, tphl = (1.7 /pf) L tplh, tphl = (0.66 /pf) L tplh, tphl = (0.5 /pf) L Propagation Delay Time, Reset to tphl = (1.7 /pf) L tphl = (0.66 /pf) L tphl = (0.5 /pf) L lock Pulse Width Reset Pulse Width lock Pulse Frequency lock Pulse Rise and Fall Time Monostable Multivibrator Pulse Width haracteristic Symbol Min Typ # Max Unit ttlh, tthl tplh, tphl tphl twh(cl) twh(r) fcl ttlh, tthl twh() No Limit * The formulas given are for the typical characteristics only at 25. #Data labelled Typ is not to be used for design purposes but is intended as an indication of the I s potential performance MHz ID 500 µf 20 Vin 90% % 20 VSS PULSE GENERTOR Vin ONTROL VRILE WIDTH VSS L L L L L L L L Figure 1. Power Dissipation Test ircuit and Waveform MOTOROL MOS LOGI DT M
5 PROGRMMLE PULSE GENERTOR ONTROL VSS L L L L L L L L NOTE: ssume ounter at 6 and 5/ 6 ounter at 2 at beginning of sequence. OR LOK ND 20 twh(cl) 90% % fcl 20 OR tplh tplh ttlh % 90% % 90% twh(r) tphl tthl twh() t WH Figure 2. Switching Time Test ircuit and Waveforms M MOTOROL MOS LOGI DT
6 TIMING DIGRM Divide y ounter LOK Divide y 5/Divide y LOK ONTROL Monostable Multivibrator = DON T RE MOTOROL MOS LOGI DT M
7 PPLITION 12 HOUR LOK 60 Hz < 1.0 M* > 00 pf* TENTH SEONDS + SEONDS MINUTES M140 R HOURS R D 5/ 6 ontrol not shown = VSS Reset pi not shown = VSS * are must be taken in the indicated circuit to filter line traients which may cause false counting. M MOTOROL MOS LOGI DT
8 OUTLINE DIMENSIONS L SUFFIX ERMI DIP PKGE SE 620 ISSUE V T SETING PLNE F E G D 16 PL 0.25 (0.0) M T N S K L M J 16 PL 0.25 (0.0) M T S NOTES: 1. DIMENSIONING ND TOLERNING PER NSI Y14.5M, ONTROLLING DIMENSION: INH. 3. DIMENSION L TO ENTER OF LED WHEN FORMED PRLLEL. 4. DIMENSION F MY NRROW TO 0.76 (0.030) WHERE THE LED ENTERS THE ERMI ODY. INHES MILLIMETERS DIM MIN MX MIN MX D E 0 S 1.27 S F G 0.0 S 2.54 S H K L S 7.62 S M 0 0 N P SUFFIX PLSTI DIP PKGE SE ISSUE R 16 H 1 8 G F 9 D 16 PL S K 0.25 (0.0) M T SETING T PLNE M J L M NOTES: 1. DIMENSIONING ND TOLERNING PER NSI Y14.5M, ONTROLLING DIMENSION: INH. 3. DIMENSION L TO ENTER OF LEDS WHEN FORMED PRLLEL. 4. DIMENSION DOES NOT INLUDE MOLD FLSH. 5. ROUNDED ORNERS OPTIONL. INHES MILLIMETERS DIM MIN MX MIN MX D F G 0.0 S 2.54 S H 0 S 1.27 S J K L M 0 0 S MOTOROL MOS LOGI DT M
9 OUTLINE DIMENSIONS D SUFFIX PLSTI SOI PKGE SE ISSUE J T SETING PLNE G D 16 PL K P 8 PL 0.25 (0.0) M S 0.25 (0.0) M T S S M R X 45 J F NOTES: 1. DIMENSIONING ND TOLERNING PER NSI Y14.5M, ONTROLLING DIMENSION: MILLIMETER. 3. DIMENSIONS ND DO NOT INLUDE MOLD PROTRUSION. 4. MXIMUM MOLD PROTRUSION 0. (0.006) PER SIDE. 5. DIMENSION D DOES NOT INLUDE DMR PROTRUSION. LLOWLE DMR PROTRUSION SHLL E (0.005) TOTL IN EXESS OF THE D DIMENSION T MXIMUM MTERIL ONDITION. MILLIMETERS INHES DIM MIN MX MIN MX D F G 1.27 S 0 S J K M P R Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation coequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specificatio can and do vary in different applicatio and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any licee under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applicatio intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should uyer purchase or use Motorola products for any such unintended or unauthorized application, uyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless agait all claims, costs, damages, and expees, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/ffirmative ction Employer. How to reach us: US/EUROPE/Locatio Not Listed: Motorola Literature Distribution; JPN: Nippon Motorola Ltd.; Tatsumi SPD JLD, 6F Seibu utsuryu enter, P.O. ox 20912; Phoenix, rizona or Tatsumi Koto Ku, Tokyo 135, Japan MFX: RMFX0@ .sps.mot.com TOUHTONE SI/PIFI: Motorola Semiconductors H.K. Ltd.; 8 Tai Ping Industrial Park, INTERNET: NET.com 51 Ting Kok Road, Tai Po, N.T., Hong Kong M MOTOROL MOS LOGI M14566/D DT
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SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)
NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. TRUTH TABLES
QUA BUS TRANSEIVER The SN54/LS242 and SN54/LS243 are Quad Bus Transmitters/Receivers designed for 4-line asynchronous 2-way data communications between data buses. Hysteresis at Inputs to Improve Noise
High Performance Silicon Gate CMOS
SEIONUTOR TEHNIAL ATA High Performance Silicon Gate OS The 54/74H574A is identical in pinout to the LS574. The device inputs are compatible with standard OS outputs; with pullup resistors, they are compatible
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout
COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558
SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output
Freescale Semiconductor, I VDD VSS
nc. SEMICONDUCTOR TECHNICL DT Order this document by MCM6926/D dvance Information 128K x 8 Bit Fast Static Random ccess Memory The MCM6926 is a 1,048,576 bit static random access memory organized as 131,072
SN54/74LS390 SN54/74LS393 DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER DUAL DECADE COUNTER; DUAL 4-STAGE BINARY COUNTER FAST AND LS TTL DATA 5-544
DUA DECADE ER; DUA -STAGE BINARY ER The SN5/7S and SN5/7S each contain a pair of high-speed -stage ripple counters. Each half of the S is partitioned into a divide-by-two section and a divide-by five section,
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction
High Performance Silicon Gate CMOS
SEIONDUTOR TENI DT igh Performance Silicon ate OS The 54/7432 is identical in pinout to the S32. The device inputs are compatible with Standard OS outputs; with pullup resistors, they are compatible with
TIP120, TIP121, TIP122,
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners
1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS
Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3
PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit
SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.
LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS
Order this document by TL7/D These low noise JFET input operational amplifiers combine two stateoftheart analog technologies on a single monolithic integrated circuit. Each internally compensated operational
LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION PLASTIC N SUFFIX CASE 646 SOIC D SUFFIX CASE 751A
These dc triggered multivibrators feature pulse width control by three methods. The basic pulse width is programmed by selection of external resistance and capacitance values. The LS122 has an internal
PIN ASSIGNMENT B 1 18 C 2 17 f LT 3 16 g BI 4 a LE 5 14 b D 6 13 c A 7 12 d RBI e RBO e f d g a c b DISPLAY TRUTH TABLE Input
BCDToSeven Segment Latch/Decoder/Driver CMOS MSI (LowPower Complementary MOS) The MC14513B BCDtoseven segment latch/decoder/driver is cotructed with complementary MOS (CMOS) enhancement mode devices and
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SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)
DUAL TIMING CIRCUIT SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS ORDERING INFORMATION. Figure Second Solid State Time Delay Relay Circuit
The MC3456 dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting if desired. In the
QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS
Order this document by A26LS32/D otorola s Quad EIA422/3 Receiver features four independent receiver chains which comply with EIA Standards for the Electrical Characteristics of Balanced/Unbalanced Voltage
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)
PERIPHERAL DRIVER ARRAYS
Order this document by MC43/D The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications.
BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C
SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.
LOW POWER SCHOTTKY. MARKING DIAGRAMS GUARANTEED OPERATING RANGES
The SN74LS373 consists of eight latches with 3-state outputs for bus organized system applications. The flip-flops appear transparent to the data (data changes asynchronously) when Latch Enable (LE) is
MBR5H100MFST3G NRVB5H100MFST3G. SWITCHMODE Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 5 AMPERES 100 VOLTS
MBRHMFS, NRVBHMFS SWITHMODE Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides apability of Inspection and Probe
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6547/D The 2N6547 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are
MC1455, MC1455B, NCV1455B. Timers
M, MB, NVB Timers The M monolithic timing circuit is a highly stable controller capable of producing accurate time delays or oscillation. Additional terminals are provided for triggering or resetting if
MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS
SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage
NB3L553/D. 2.5 V / 3.3 V / 5.0 V 1:4 Clock Fanout Buffer
2.5 V / 3.3 V / 5.0 V :4 lock Fanout Buffer Description The NB3L553 is a low skew to 4 clock fanout buffer, designed for clock distribution in mind. The NB3L553 specifically guarantees low output to output
SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed
Advance Information MC MOTOROLA. EIA 232 E and CCITT V.28 SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by /D Advance Information EIA E and CCITT. The is a silicon gate CMOS IC that combines three drivers and three receivers to fulfill the electrical specifications
TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA
SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @