MECL PLL COMPONENTS 64/65, 128/129 LOW POWER DUAL MODULUS PRESCALER WITH STAND BY MODE

Size: px
Start display at page:

Download "MECL PLL COMPONENTS 64/65, 128/129 LOW POWER DUAL MODULUS PRESCALER WITH STAND BY MODE"

Transcription

1 Order this document by 253/ The 253 is a super low power 64/65, 2/29 dual modulus prescaler. Motorola s advanced ipolar MOSI V technology is utilized to achieve low power dissipation of 4.3 mw at a minimum supply voltage of 2.7 V. The ivide Ratio ontrol input, SW, permits selection of divide ratio as desired. HIGH on SW selects 64/65; an OPEN on SW selects 2/29. The Modulus ontrol input,, selects the proper divide number after SW has been biased to select the desired divide ratio. Standby mode is featured to reduce current drain to 5 µ typical at 2.7 V when the standby pin, S, is switched LOW, disabling the prescaler. Onchip output termination provides 5 µ (typical) output current, which is sufficient to drive a MOS synthesizer input high impedance load (. pf typical).. GHz Toggle Frequency Supply Voltage of 2.7 to 5.5 V Low Power.5 m Typical at V = 2.7 V Operating Temperature Range of 4 to 5 Onhip Output Termination The 253 Is Pin and Functionally ompatible With the 236 Modulus ontrol Input Level Is ompatible With Standard MOS and TTL MOSI V is a trademark of Motorola FUNTIONL TLE SW ivide Ratio MEL PLL OMPONENTS 64/65, 2/29 LOW POWER UL MOULUS PRESLER WITH STNY MOE SEMIONUTOR TEHNIL T SUFFIX SE 75 (SO) S SUFFIX SE 94 (SSOP) H H 64 H L 65 L H 2 P ONNETIONS L L 29 NOTES:. SW: H = V.5 to V, L = Open. logic L can also be applied by grounding this pin, but this is not recommended due to increased power consumption. 2. & S: H = 2. V to V, L = Gnd to. V. MXIMUM RTGS V SW OUT S Gnd haracteristic Symbol Range Unit (Top View) Power Supply Voltage, Pin 2 V.5 to 7. Vdc Operating Temperature Range T 4 to 5 Storage Temperature Range Tstg 65 to 5 Modulus ontrol Input, Pin 6.5 to V Vdc Maximum Output urrent, Pin 4 IO 4. m NOTE: ES data available upon request. evice S ORERG FORMTION Operating Temp Range T = 4 to +5 Package SO SSOP Motorola, Inc. 997 Rev 4

2 253 ELETRIL HRTERISTIS (V = 2.7 to 5.5 V; T = 4 to 5, unless otherwise notex.) haracteristic Symbol Min Typ Max Unit Toggle Frequency (Sine Wave Input) ft..4. GHz Supply urrent Output (Pin 2) V = 2.7 V V = 5. V I m Standy urrent V = 2.7 V V = 5. V IS µ Modulus ontrol & Standy Input HIGH ( & S) VIH 2. V +.5 V Modulus ontrol & Standy Input LOW ( & S) VIL Gnd. V ivide Ratio ontrol Input HIGH (SW) VIH2 V.5 V V +.5 V ivide Ratio ontrol Input LOW (SW) VIH2 Open Open Open Output Voltage Swing (Note ) Vout.. Vpp Modulus Setup Time to OUT at MHz tset 6 ns Input Voltage Sensitivity 25 MHz 25 MHz Vin 4 mvpp NOTE: ssumes. pf high impedance load. Figure. Logic iagram (253) Figure 2. Modulus Setup Time In In M Prop. elay In Out S Setup Release E F G H S Out Modulus setup time to out is the setup or release plus the prop delay. SW Figure 3. Test ircuit V = 2.7 to 5.5 V Sine Wave Generator V SW S 3 5 Ω OUT 2 GN L EXTERNL OMPONENTS = 2 = pf 3 =. µf L =. pf (Including Scope and jig capacitance) Input 2 MOTOROL RF/IF EVIE T

3 253 Figure 4. Input Signal mplitude versus Input Frequency MPLITUE (dm) ÉÉÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ OPERTG WOW ÉÉÉÉÉÉÉÉÉÉÉÉ ÉÉÉÉÉÉÉÉÉÉÉÉ mvrms FREUENY (MHz) ivide Ratio = 64; V = 2.7 V; T = 25 Figure 5. Output mplitude versus Input Frequency mvpp FREUENY (MHz) MOTOROL RF/IF EVIE T 3

4 253 Figure 6. Typical Input Impedance versus Input Frequency 3 R 2 MHz 2 OHMS jx MOTOROL RF/IF EVIE T

5 253 E 5 4 H OUTLE IMENSIONS.25 M M SUFFIX SE 756 (SO) ISSUE T NOTES:. IMENSIONG N TOLERNG PER SME Y4.5M, IMENSIONS RE MILLIMETER. 3. IMENSION N E O NOT LUE MOL PROTRUSION. 4. MXIMUM MOL PROTRUSION.5 PER SIE. 5. IMENSION OES NOT LUE MR PROTRUSION. LLOWLE MR PROTRUSION SHLL E.27 TOTL EXESS OF THE IMENSION T MXIMUM MTERIL ONITION. e.25 M S S SETG PLNE. h X 45 L MILLIMETERS IM M MX E e.27 S H h.25.5 L S SUFFIX SE 943 (SSOP) ISSUE L L/2 P IENT 5 V.2 (.) M T.76 (.3) T SETG PLNE X K REF.2 (.5) M T U S V S 4 G U S U H J N N ETIL E F M ETIL E K.25 (.) ÇÇÇÇ ÉÉÉÉ K SETION NN J W NOTES: IMENSIONG N TOLERNG PER NSI Y4.5M, ONTROLLG IMENSION: MILLIMETER. 3 IMENSION OES NOT LUE MOL FLSH, PROTRUSIONS OR GTE URRS. MOL FLSH OR GTE URRS SHLL NOT EXEE.5 (.6) PER SIE. 4 IMENSION OES NOT LUE TERLE FLSH OR PROTRUSION. TERLE FLSH OR PROTRUSION SHLL NOT EXEE.5 (.6) PER SIE. 5 IMENSION K OES NOT LUE MR PROTRUSION/TRUSION. LLOWLE MR PROTRUSION SHLL E.3 (.5) TOTL EXESS OF K IMENSION T MXIMUM MTERIL ONITION. MR TRUSION SHLL NOT REUE IMENSION K Y MORE THN.7 (.2) T LEST MTERIL ONITION. 6 TERML NUMERS RE SHOWN FOR REFERENE ONLY. 7 IMENSION N RE TO E ETERME T TUM PLNE W. MILLIMETERS HES IM M MX M MX F G.65 S.26 S H J J K K L M MOTOROL RF/IF EVIE T 5

6 253 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. Typical parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should uyer purchase or use Motorola products for any such unintended or unauthorized application, uyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/ffirmative ction Employer. 6 MOTOROL RF/IF EVIE T

7 253 Mfax is a trademark of Motorola, Inc. How to reach us: US / EUROPE / Locations Not Listed: Motorola Literature istribution; JPN: Nippon Motorola Ltd.: SP, Strategic Planning Office, 4, P.O. ox 545, enver, olorado or NishiGotanda, Shagawaku, Tokyo, Japan ustomer Focus enter: Mfax : RMFX@ .sps.mot.com TOUHTONE SI/PIFI: Motorola Semiconductors H.K. Ltd.; Tai Ping Industrial Park, Motorola Fax ack System US & anada ONLY Ting Kok Road, Tai Po, N.T., Hong Kong HOME PGE: MOTOROL RF/IF EVIE T 253/ 7

ARCHIVE INFORMATION. Freescale Semiconductor, I MECL PLL COMPONENTS 8/9, 16/17 DUAL MODULUS PRESCALER ARCHIVED BY FREESCALE SEMICONDUCTOR, INC.

ARCHIVE INFORMATION. Freescale Semiconductor, I MECL PLL COMPONENTS 8/9, 16/17 DUAL MODULUS PRESCALER ARCHIVED BY FREESCALE SEMICONDUCTOR, INC. nc. Order this document by M226A/ The M226 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The M226A can be used with MOS synthesizers requiring positive

More information

MECL PLL COMPONENTS 64/65, 128/129 DUAL MODULUS PRESCALER

MECL PLL COMPONENTS 64/65, 128/129 DUAL MODULUS PRESCALER Order this document by M222LVA/ The M222LVA can be used with MOS synthesizers requiring positive edges to trigger internal counters such as Motorola s M45XXX series in a PLL to provide tuning signals up

More information

SEMICONDUCTOR TECHNICAL DATA MECL PLL COMPONENTS PRESCALER WITH STAND BY MODE

SEMICONDUCTOR TECHNICAL DATA MECL PLL COMPONENTS PRESCALER WITH STAND BY MODE SEMIONDUTOR TEHNIAL DATA The M1203 is a 2 prescaler for low power frequency division of a 1.1GHz high frequency input signal. On chip output termination provides output current to drive a 2pF (typical)

More information

PIN CONNECTIONS ORDERING INFORMATION FUNCTIONAL TABLE

PIN CONNECTIONS ORDERING INFORMATION FUNCTIONAL TABLE The MC12026 is a high frequency, low voltage dual modulus prescaler used in phase locked loop (PLL) applications. The MC12026A can be used with CMOS synthesizers requiring positive edges to trigger internal

More information

MDC5101R2 SEMICONDUCTOR TECHNICAL DATA

MDC5101R2 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICL DT Order this document by MDC511/D The MDC511 inputs TxE and RxE Logic Signals with an accessory input termination option and, allows positive and negative control voltages in accordance

More information

MC GHz Low Power Prescaler With Stand-By Mode

MC GHz Low Power Prescaler With Stand-By Mode 2.5 GHz Low Power Prescaler With Stand-By Mode Description The M1295 is a single modulus prescaler for low power frequency division of a 2.5 GHz high frequency input signal. MOSAI V technology is utilized

More information

1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS

1 Block HV2 LDMOS Device Number of fingers: 56, Periphery: 5.04 mm Frequency: 1 GHz, V DS. =26 v & I DS Number of fingers: 56, Periphery: 5.4 mm =2. ma/mm 5 ohm Termination Output Power at Fundamental vs. 4 11 Transducer Gain vs. Output Power at Fundamental 3 1-1 Transducer Gain 1 9 7 6 - -3 - -1 1 3 4 5-3

More information

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF

ARCHIVE INFORMATION LOW POWER NARROWBAND FM IF Order this document by MC6C/D The MC6C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for use

More information

DatasheetArchive.com. Request For Quotation

DatasheetArchive.com. Request For Quotation DatasheetArchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative

More information

LOW POWER NARROWBAND FM IF

LOW POWER NARROWBAND FM IF Order this document by MC336C/D The MC336C includes an Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active Filter, Squelch, Scan Control and Mute Switch. This device is designed for

More information

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

LOW POWER FM IF SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by MC7/D... includes Oscillator, Mixer, Limiting Amplifier, Quadrature Discriminator, Active, Squelch, Scan Control, and Mute Switch. The MC7 is designed for use in FM dual conversion

More information

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY.  GUARANTEED OPERATING RANGES ORDERING INFORMATION The SN74LS64 is a high speed 8-Bit Serial-In Parallel-Out Shift Register. Serial data is entered through a 2-Input AN gate synchronous with the LOW to HIGH transition of the clock. The device features

More information

Distributed by: www.jameco.com 1--31-4242 The content and copyrights of the attached material are the property of its owner. Order this document by M3/D The M3 is an integrated circuit featuring wide range

More information

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA

MRFIC2006. The MRFIC Line SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D The MRFIC Line The is an Integrated PA designed for linear operation in the MHz to. GHz frequency range. The design utilizes Motorola s advanced MOSAIC

More information

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510

SN54/74LS353 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS FAST AND LS TTL DATA 5-510 DUAL 4-INPUT MULTIPLEXER WITH 3-STATE OUTPUTS The LSTTL/ MSI SN54/ LS353 is a Dual 4-Input Multiplexer with 3-state outputs. It can select two bits of data from four sources using common select inputs.

More information

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT

MC33064DM 5 UNDERVOLTAGE SENSING CIRCUIT Order this document by MC3464/D The MC3464 is an undervoltage sensing circuit specifically designed for use as a reset controller in microprocessor-based systems. It offers the designer an economical solution

More information

DatasheetArchive.com. Request For Quotation

DatasheetArchive.com. Request For Quotation Datasheetrchive.com Request For Quotation Order the parts you need from our real-time inventory database. Simply complete a request for quotation form with your part information and a sales representative

More information

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C

PD Operating Junction and Storage Temperature Range TJ, Tstg 65 to +150 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF4427/D The RF Line Designed for amplifier, frequency multiplier, or oscillator applications in industrial equipment constructed with surface mount

More information

QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS

QUAD EIA 422 LINE DRIVER WITH THREE STATE OUTPUTS Order this document by MC3487/D Motorolas Quad EIA422 Driver features four independent driver chains which comply with EIA Standards for the Electrical Characteristics of Balanced Voltage Digital Interface

More information

MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA

MC MOTOROLA CMOS SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MC456/D CMOS The MC456 is a phase locked loop (PLL) frequency synthesizer constructed in CMOS on a single monolithic structure. This synthesizer finds

More information

WIDEBAND AMPLIFIER WITH AGC

WIDEBAND AMPLIFIER WITH AGC Order this document by MC9/D The MC9 is an integrated circuit featuring wide range AGC for use in RF/IF amplifiers and audio amplifiers over the temperature range, to + C. High Power Gain: db Typ at MHz

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL3281A/D The MJL3281A and MJL132A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed

More information

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366

SN54/74LS195A UNIVERSAL 4-BIT SHIFT REGISTER UNIVERSAL 4-BIT SHIFT REGISTER FAST AND LS TTL DATA 5-366 UNIVERSAL 4-BIT SHIFT REGISTER The SN54 / 74LS95A is a high speed 4-Bit Shift Register offering typical shift frequencies of 39 MHz. It is useful for a wide variety of register and counting applications.

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MOC8020/D The MOC8020 and MOC802 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon photodarlington

More information

Designer s Data Sheet Insulated Gate Bipolar Transistor

Designer s Data Sheet Insulated Gate Bipolar Transistor MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MGW2N2/D Designer s Data Sheet Insulated Gate Bipolar Transistor N Channel Enhancement Mode Silicon Gate This Insulated Gate Bipolar Transistor

More information

MC1488 QUAD MDTL LINE DRIVER EIA 232D

MC1488 QUAD MDTL LINE DRIVER EIA 232D Order this document by MC/D The MC is a monolithic quad line driver designed to interface data terminal equipment with data communications equipment in conformance with the specifications of EIA Standard

More information

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR

LM337MT MEDIUM CURRENT THREE TERMINAL ADJUSTABLE NEGATIVE VOLTAGE REGULATOR Order this document by /D The is an adjustable threeterminal negative voltage regulator capable of supplying in excess of 5 ma over an output voltage range of 1.2 V to 37 V. This voltage regulator is exceptionally

More information

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA

ARCHIVE INFORMATION MMBR951 MRF957. Freescale Semiconductor, I. The RF Line SEMICONDUCTOR TECHNICAL DATA nc. SEMICONDUCTOR TECHNICAL DATA Order this document by MMBR9/D The RF Line Designed for use in high gain, low noise small signal amplifiers. This series features excellent broadband linearity and is offered

More information

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS

ULN2803A ULN2804A OCTAL PERIPHERAL DRIVER ARRAYS Order this document by /D The eight NPN Darlington connected transistors in this family of arrays are ideally suited for interfacing between low logic level digital circuitry (such as TTL, CMOS or PMOS/NMOS)

More information

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C

Watts W/ C Storage Temperature Range Tstg 65 to +150 C Operating Junction Temperature TJ 200 C SEMICONDUCTOR TECHNICAL DATA Order this document by MRF184/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs Designed for broadband commercial and industrial applications at frequencies to

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. TRUTH TABLES

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. TRUTH TABLES QUA BUS TRANSEIVER The SN54/LS242 and SN54/LS243 are Quad Bus Transmitters/Receivers designed for 4-line asynchronous 2-way data communications between data buses. Hysteresis at Inputs to Improve Noise

More information

High Performance Silicon Gate CMOS

High Performance Silicon Gate CMOS SEIONDUTOR TEHNIAL High Performance Silicon Gate OS The 54/74H45A is identical in pinout to the LS45. The device inputs are compatible with standard OS outputs; with pullup resistors, they are compatible

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. BCD DECADE/MODULO BINARY SYNCHRONOUS BI-DIRECTIONAL COUNTERS The SN54/ 74LS8 and SN54/ 74LS9 are fully synchronous 4-stage up/down counters featuring a preset capability for programmable operation, carry

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA Order this document by MJD44H/D DPAK For Surface Mount Applications... for general purpose power and switching such as output or driver stages in applications such as switching

More information

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N2369 2N2369A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by N69/D NPN Silicon COLLECTOR *Motorola Preferred Device BASE EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector Emitter Voltage VCEO 5 Vdc Collector

More information

MC3456 DUAL TIMING CIRCUIT

MC3456 DUAL TIMING CIRCUIT Order this document by /D The dual timing circuit is a highly stable controller capable of producing accurate time delays, or oscillation. Additional terminals are provided for triggering or resetting

More information

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb

PD Characteristic Symbol Min Typ Max Unit. V(BR)CEO 15 Vdc. V(BR)CBO 20 Vdc. V(BR)EBO 3.0 Vdc. ICBO 100 nadc. ft 4.5 GHz. Ccb SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The transistor uses the same state of the art microwave transistor chip which features fine line geometry, ion implanted arsenic emitters

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 5 Vdc Collector Base Voltage VCBO 4 3 Vdc

More information

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5550 2N5551. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 40 60 Collector

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL32A/D The MJL32A and MJL32A are PowerBase power transistors for high power audio, disk head positioners and other linear applications. Designed for

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE23/D The MJE23 is an applications specific device designed to provide low dropout linear regulation for switching regulator post regulators, battery

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the MHz frequency range. Specified @.5 V, 7 MHz Characteristics Output

More information

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

2N5400 2N5401. PNP Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon *Motorola Preferred Device COLLECTOR 3 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol 2N540 Unit Collector Emitter Voltage VCEO Collector

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit ON CHARACTERISTICS DC Current Gain (I SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is designed for output stages in band IV and V TV transmitter amplifiers. It incorporates high value emitter ballast resistors, gold

More information

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 546 BC 547 BC 548 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS

LOW NOISE, JFET INPUT OPERATIONAL AMPLIFIERS Order this document by TL7/D These low noise JFET input operational amplifiers combine two stateoftheart analog technologies on a single monolithic integrated circuit. Each internally compensated operational

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package. PRESETTABLE BCD/DECADE UP/DOWN COUNTER PRESETTABLE 4-BIT BINARY UP/DOWN COUNTER The SN54/74LS192 is an UP/DOWN BCD Decade (8421) Counter and the SN54/74LS193 is an UP/DOWN MODULO- Binary Counter. Separate

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMIONUTOR TEHNIL T The M406 and M409 multiplexers/demultiplexers are digitally controlled analog switches featuring low ON resistance and very low leakage current. These devices can be used in either

More information

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted)

J308. N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) SEMICONDUCTOR TECHNICAL DATA Order this document by J38/D N Channel Depletion 3 GATE 1 DRAIN Motorola Preferred Devices 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by /D... for use as output devices in complementary general purpose amplifier applications. High DC Current Gain hfe = 6000 (Typ) @ IC = 3.0 Adc Monolithic

More information

LA6324N. Overview. Features. Specitications. Monolithic Linear IC High-Performance Quad Operational Amplifier

LA6324N. Overview. Features. Specitications. Monolithic Linear IC High-Performance Quad Operational Amplifier Ordering number : ENN274 L6324N Monolithic Linear I HighPerformance Quad Operational mplifier http://onsemi.com Overview The L6324 consists of four independent, highperformance, internally phase compensated

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by N/D The N, N and N7 devices consist of a gallium arsenide infrared emitting diode optically coupled to a monolithic silicon phototransistor detector.

More information

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS

VHF 2.0 GHz LOW NOISE AMPLIFIER WITH PROGRAMMABLE BIAS Order this document by MC13144/D The MC13144 is designed in the Motorola High Frequency Bipolar MOSIAC V wafer process to provide excellent performance in analog and digital communication systems. It includes

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N355/D... designed for general purpose switching and amplifier applications. DC Current Gain hfe = 7 @ IC = 4 Adc Collector Emitter Saturation Voltage

More information

Freescale Semiconductor, I

Freescale Semiconductor, I nc. Order this document by MC3393/D The MC3393 is a new generation industry standard UAA04 Flasher. It has been developed for enhanced EMI sensitivity, system reliability, and improved wiring simplification.

More information

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara

ELECTRICAL CHARACTERISTICS continued (T C = 25 C unless otherwise noted) ON CHARACTERISTICS Gate Threshold Voltage (V DS = 10 Vdc, I D = 100 µa) Chara SEMICONDUCTOR TECHNICAL DATA Order this document by MRF182/D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFETs High Gain, Rugged Device Broadband Performance from HF to 1 GHz Bottom Side Source

More information

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA

2N5883 2N5884 SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5883/D... designed for general purpose power amplifier and switching applications. Low Collector Emitter Saturation Voltage VCE(sat) = 1. Vdc, (max)

More information

LOW POWER FM TRANSMITTER SYSTEM

LOW POWER FM TRANSMITTER SYSTEM Order this document by MC28/D MC28 is a onechip FM transmitter subsystem designed for cordless telephone and FM communication equipment. It includes a microphone amplifier, voltage controlled oscillator

More information

LOW POWER SCHOTTKY. GUARANTEED OPERATING RANGES ORDERING INFORMATION

LOW POWER SCHOTTKY.   GUARANTEED OPERATING RANGES ORDERING INFORMATION The SN74LS298 is a Quad 2-Port Register. It is the logical equivalent of a quad 2-input multiplexer followed by a quad 4-bit edge-triggered register. A Common Select input selects between two 4-bit input

More information

MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount

MM3Z2V4T1 SERIES. Zener Voltage Regulators. 200 mw SOD 323 Surface Mount Zener Voltage Regulators mw Surface Mount This series of Zener diodes is packaged in a surface mount package that has a power dissipation of mw. They are designed to provide voltage regulation protection

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit.

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 25 C/W. Characteristic Symbol Min Typ Max Unit. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line Designed primarily for wideband large signal predriver stages in the UHF frequency range. Specified @.5 V, 7 MHz Characteristics @ Pout

More information

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS

MPS2222 MPS2222A. NPN Silicon SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS THERMAL CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 3 *Motorola Preferred Device 2 BASE MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 3 4 Collector Base Voltage

More information

MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator

MC10ELT22, MC100ELT22. 5VНDual TTL to Differential PECL Translator 5VНual TTL to ifferential PECL Translator The MC0ELT/00ELT22 is a dual TTL to differential PECL translator. Because PECL (Positive ECL) levels are used only +5 V and ground are required. The small outline

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9236MN. Freescale Semiconductor. Technical Data Technical Data Cellular Band RF Linear LDMOS Amplifier Designed for ultra- linear amplifier applications in ohm systems operating in the cellular frequency band. A silicon FET Class A design provides outstanding

More information

PERIPHERAL DRIVER ARRAYS

PERIPHERAL DRIVER ARRAYS Order this document by MC43/D The seven NPN Darlington connected transistors in these arrays are well suited for driving lamps, relays, or printer hammers in a variety of industrial and consumer applications.

More information

LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER

LAST ORDER 19SEP02 LAST SHIP 19MAR03 DEVICE ON LIFETIME BUY. Freescale Semiconductor, I. DUAL BAND/DUAL MODE GaAs INTEGRATED POWER AMPLIFIER nc. Order this document by MRFIC856/D The MRFIC856 is designed for dual band subscriber equipment applications at in the cellular (800 MHz) and PCS (900 MHz) bands. The device incorporates two phemt GaAs

More information

MC100LVELT22 3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT22 is a dual LVTTL/LVCMOS to differential LVPECL trans

MC100LVELT22 3.3V Dual LVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT22 is a dual LVTTL/LVCMOS to differential LVPECL trans 3.3V ual LVTTL/LVMOS to ifferential LVPEL Translator escription The is a dual LVTTL/LVMOS to differential LVPEL translator. ecause LVPEL (Low Voltage Positive EL) levels are used, only +3.3 V and ground

More information

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS

MJD47 MJD50. DPAK For Surface Mount Applications SEMICONDUCTOR TECHNICAL DATA NPN SILICON POWER TRANSISTORS 1 AMPERE 250, 400 VOLTS 15 WATTS SEMICONDUCTOR TECHNICAL DATA Order this document by MJD47/D DPAK For Surface Mount Applications Designed for line operated audio output amplifier, switchmode power supply drivers and other switching applications.

More information

ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005

ARCHIVE INFORMATION. PCS Band RF Linear LDMOS Amplifier MHL Freescale Semiconductor. Technical Data MHL Rev. 4, 1/2005 Technical Data Rev. 4, 1/25 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. PCS Band

More information

TIP120, TIP121, TIP122,

TIP120, TIP121, TIP122, SEMICONDUCTOR TECHNICAL DATA Order this document by TIP120/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2500 (Typ) @ IC = 4.0 Adc Collector

More information

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5.

COLLECTOR BASE EMITTER. mw mw/ C PD PD Watt. Characteristic Symbol Min Typ Max Unit V(BR)CEO BC338 V(BR)CES BC338. V(BR)EBO 5. SEMICONDUCTOR TECHNICAL DATA Order this document by /D NPN Silicon COLLECTOR 2 BASE EMITTER MAXIMUM RATINGS Rating Symbol Unit Collector Emitter Voltage VCEO 45 25 Vdc Collector Base Voltage VCBO 5 Vdc

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJL21193/D The MJL21193 and MJL21194 utilize Perforated Emitter technology and are specifically designed for high power audio output, disk head positioners

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9318. Freescale Semiconductor. Technical Data MHL9318. Rev. Technical Data Rev. 3, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev.

ARCHIVE INFORMATION. Cellular Band RF Linear LDMOS Amplifier MHL9838. Freescale Semiconductor. Technical Data MHL9838. Rev. Technical Data Rev. 4, 1/2005 Replaced by N. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead-free terminations. Cellular

More information

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION

STEPPER MOTOR DRIVER SEMICONDUCTOR TECHNICAL DATA PIN CONNECTIONS. Figure 1. Representative Block Diagram ORDERING INFORMATION Order this document by SAA4/D The SAA4 drives a two phase stepper motor in the bipolar mode. The device contains three input stages, a logic section and two output stages. The IC is contained in a pin

More information

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit

PD Characteristic Symbol Max Unit Thermal Resistance, Junction to Case (2) RθJC 1.75 C/W. Characteristic Symbol Min Typ Max Unit SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 13.6 volt VHF large signal class C and class AB linear power amplifier applications in commercial and industrial equipment.

More information

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS

N Channel Depletion SEMICONDUCTOR TECHNICAL DATA MAXIMUM RATINGS. ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) OFF CHARACTERISTICS SEMICONDUCTOR TECHNICAL DATA Order this document by MPF2/D N Channel Depletion 1 DRAIN 3 GATE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage VDS 25 Vdc Drain Gate Voltage VDG 25 Vdc Gate

More information

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA

TIP41A TIP41B TIP41C SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP41A/D... designed for use in general purpose amplifier and switching applications. Collector Emitter Saturation Voltage VCE(sat) = 1.5 Vdc (Max) @

More information

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L.

NOTE: The Flatpak version has the same pinouts (Connection Diagram) as the Dual In-Line Package U.L U.L U.L. 5 (2.5) U.L. DUAL -OF-4 DECODER/ DEMULTIPLEXER The SN54/ LS55 and SN54/ LS56 are high speed Dual -of-4 Decoder/Demultiplexers. These devices have two decoders with common 2-bit Address inputs and separate gated Enable

More information

LOW POWER SCHOTTKY. MARKING DIAGRAMS GUARANTEED OPERATING RANGES

LOW POWER SCHOTTKY.   MARKING DIAGRAMS GUARANTEED OPERATING RANGES The SN74LS373 consists of eight latches with 3-state outputs for bus organized system applications. The flip-flops appear transparent to the data (data changes asynchronously) when Latch Enable (LE) is

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MUR/D... designed for use in switching power supplies, inverters and as free wheeling diodes, these state of the art devices have the following features:

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE243/D... designed for low power audio amplifier and low current, high speed switching applications. High Collector Emitter Sustaining Voltage VCEO(sus)

More information

For Isolated Package Applications

For Isolated Package Applications SEMONDUCTOR TECHNAL DATA Order this document by BUT11AF/D For Isolated Package Applications The BUT11AF was designed for use in line operated switching power supplies in a wide range of end use applications.

More information

MC33349 LITHIUM BATTERY PROTECTION CIRCUIT FOR ONE CELL SMART BATTERY PACKS

MC33349 LITHIUM BATTERY PROTECTION CIRCUIT FOR ONE CELL SMART BATTERY PACKS Order this document by MC33349PP/D The MC33349 is a monolithic lithium battery protection circuit that is designed to enhance the useful operating life of a one cell rechargeable battery pack. Cell protection

More information

MCM M x 4 Bit Static Random Access Memory SEMICONDUCTOR TECHNICAL DATA MCM6949 MOTOROLA FAST SRAM

MCM M x 4 Bit Static Random Access Memory SEMICONDUCTOR TECHNICAL DATA MCM6949 MOTOROLA FAST SRAM SEMICONDUCTOR TECHNICL DT Order this document by /D 1M x 4 Bit Static Random ccess Memory The is a 4,194,304 bit static random access memory organized as 1,048,576 words of 4 bits. Static design eliminates

More information

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558

COLLECTOR BASE EMITTER BC 557 BC556. mw mw/ C PD PD Characteristic Symbol Min Typ Max Unit V(BR)CEO BC557 BC558 V(BR)CBO BC557 BC558 SEMICONDUCTOR TECHNICAL DATA Order this document by /D PNP Silicon COLLECTOR 2 BASE 3 EMITTER MAXIMUM RATINGS Rating Symbol BC 556 BC 557 BC 558 Unit Collector Emitter oltage CEO 65 45 3 dc Collector Base

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by TIP47/D... designed for line operated audio output amplifier, Switchmode power supply drivers and other switching applications. 25 V to 4 V (Min) VCEO(sus)

More information

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C

BASE 2N2906A 2N2907,A N2904A 2N2905,A P D P D mw mw/ C Watts mw/ C T J, T stg 65 to +200 C SEMICONDUCTOR TECHNICAL DATA Order this document by N94A/D PNP Silicon Annular Hermetic Transistors Designed for high speed switching circuits, DC to VHF amplifier applications and complementary circuitry.

More information

MC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA

MC Micropower Undervoltage Sensing Circuits MICROPOWER UNDERVOLTAGE SENSING CIRCUITS SEMICONDUCTOR TECHNICAL DATA Micropower Undervoltage Sensing ircuits The M33464 series are micropower undervoltage sensing circuits that are specifically designed for use with battery powered microprocessor based systems, where extended

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE573/D... designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. 3 V to 4 V (Min) VCEO(sus)

More information

SEMICONDUCTOR APPLICATION NOTE

SEMICONDUCTOR APPLICATION NOTE SEMICONDUCTOR APPLICATION NOTE Order this document by AN/D Prepared by: Bill Lucas and Warren Schultz A plugin module that is part of a systems development tool set for pressure sensors is presented here.

More information

DPAK For Surface Mount Applications

DPAK For Surface Mount Applications SEMIONDUTOR TEHNIAL DATA Order this document by MJD/D DPAK For Surface Mount Applications Designed for general purpose amplifier and low speed switching applications. Lead Formed for Surface Mount Applications

More information

Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db

Characteristic Symbol Min Typ Max Unit Instantaneous Bandwidth BW MHz Input Return Loss IRL 15 db SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line The is a solid state class AB amplifier and is specifically designed for TV transposers and transmitters. This amplifier incorporates

More information

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V

ELECTRICAL CHARACTERISTICS (T C = 25 C unless otherwise noted) Characteristic Symbol Min Typ Max Unit OFF CHARACTERISTICS (1) Drain Source Breakdown V SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF MOSFET Line N Channel Enhancement Mode Lateral MOSFET Designed for broadband commercial and industrial applications with frequencies from 800

More information

Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features

Low Capacitance Transient Voltage Suppressors / ESD Protectors CM QG/D. Features Low Capacitance Transient Voltage Suppressors / ESD Protectors CM1250-04QG Features Low I/O capacitance at 5pF at 0V In-system ESD protection to ±8kV contact discharge, per the IEC 61000-4-2 international

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE700/D... designed for general purpose amplifier and low speed switching applications. High DC Current Gain hfe = 2000 (Typ) @ IC = A Monolithic Construction

More information

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23

NTR4170NT3G. Power MOSFET. 30 V, 3.1 A, Single N Channel, SOT 23 NTR47N Power MOSFET V,. A, Single N Channel, SOT Features Low R S(on) Low Gate Charge Low Threshold Voltage Halide Free This is a Pb Free evice Applications Power Converters for Portables Battery Management

More information

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS

QUAD EIA 422/3 LINE RECEIVER WITH THREE STATE OUTPUTS Order this document by A26LS32/D otorola s Quad EIA422/3 Receiver features four independent receiver chains which comply with EIA Standards for the Electrical Characteristics of Balanced/Unbalanced Voltage

More information

SEMICONDUCTOR TECHNICAL DATA

SEMICONDUCTOR TECHNICAL DATA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N6547/D The 2N6547 transistor is designed for high voltage, high speed, power switching in inductive circuits where fall time is critical. They are

More information

PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4.

PD Storage Temperature Range Tstg 65 to +150 C. Characteristic Symbol Max Unit Thermal Resistance, Junction to Case RθJC 4. SEMICONDUCTOR TECHNICAL DATA Order this document by /D The RF Line... designed for 12.5 Volt UHF large signal amplifier applications in industrial and commercial FM equipment operating to 512 MHz. Specified

More information