CM1293A. 2 and 4-Channel Low Capacitance ESD Protection Arrays
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1 2 and 4-Channel Low Capacitance ES Protection rrays Product escription The CM1293 family of diode arrays has been designed to provide ES protection for electronic components or subsystems requiring minimal capacitive loading. These devices are ideal for protecting systems with high data and clock rates or for circuits requiring low capacitive loading. Each ES channel consists of a pair of diodes in series that steer the positive or negative ES current pulse to either the positive (V P ) or negative (V N ) supply rail. Zener diode is embedded between V P and V N which helps protect the V CC rail against ES strikes. The CM1293 protects against ES pulses up to ±8 kv contact discharge) per the IEC Level 4 standard. This device is particularly well suited for protecting systems using high speed ports such as USB2.0, IEEE1394 (FireWire, i.link), Serial T, VI, HMI, and corresponding ports in removable storage, digital camcorders, V RW drives and other applications where extremely low loading capacitance with ES protection are required in a small package footprint. Features Two and Four Channels of ES Protection Provides ES Protection to IEC ±8 kv Contact ischarge Low Loading Capacitance of 2.0 pf Max Low Clamping Voltage Channel I/O to I/O Capacitance 1.5 pf Typical Zener iode Protects Supply Rail and Eliminates the Need for External By Pass Capacitors Each I/O Pin Can Withstand over 1000 ES Strikes* These evices are Pb Free and are RoHS Compliant pplications VI Ports, HMI Ports in Notebooks, Set Top Boxes, igital TVs, LC isplays Serial T Ports in esktop PCs and Hard isk rives PCI Express Ports General Purpose High Speed ata Line ES Protection *Standard test condition is IEC level 4 test circuit with each pin subjected to ±8 kv contact discharge for 1000 pulses. ischarges are timed at 1 second intervals and all 1000 strikes are completed in one continuous test run. The part is then subjected to standard production test to verify that all of the tested parameters are within spec after the 1000 strikes. SOT 143 SR SUFFIX CSE 318 CH1 V P V N CM SR CM SO CH2 SC 74 (Pb Free) MSOP 10 (Pb Free) CH4 MRKING IGRM XXX M V P CH3 CH1 V N CH2 CM MR ORERING INFORMTION evice Package Shipping CM SR SOT ,000 / (Pb Free) Tape & Reel CM SO CM MR SC 74 SO SUFFIX CSE 318F BLOCK IGRM XXX M XXX = Specific evice Code M = ate Code = Pb Free Package (*Note: Microdot may be in either location) MSOP 10 MR SUFFIX CSE 846E 3,000 / Tape & Reel 4,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BR8011/. Semiconductor Components Industries, LLC, 2012 July, 2012 Rev. 8 1 Publication Order Number: CM1293/
2 Table 1. PIN ESCRIPTIONS PCKGE/PINOUT IGRM 2 Channel, 4 Lead SOT143 4 Package (CM SR) Pin Name Type escription 1 V N GN Negative Voltage Supply Rail 2 CH1 I/O ES Channel 3 CH2 I/O ES Channel 4 V P PWR Positive Voltage Supply Rail 2 Channel, SC 74 Package (CM SO) Pin Name Type escription 1 NC No Connect 2 VN GN Negative Voltage Supply Rail 3 CH1 I/O ES Channel 4 CH2 I/O ES Channel 5 NC No Connect 6 VP PWR Positive Voltage Supply Rail 4 Channel, 10 Lead MSOP 10 Package (CM MR) Pin Name Type escription 1 CH1 I/O ES Channel 2 NC No Connect 3 V P PWR Positive Voltage Supply Rail 4 CH2 I/O ES Channel 5 NC No Connect 6 CH3 I/O ES Channel 7 NC No Connect 8 V N GN Negative Voltage Supply Rail 9 CH4 I/O ES Channel 10 NC No Connect Top View V N (1) V P (4) CH1 (2) VN (2) CH1 (3) CH1 NC V P CH2 NC Lead SOT143 4 Top View 2 Channel SC 74 Top View 10 Lead MSOP 10 CH2 (3) NC (1) VP (6) NC (5) CH2 (4) NC CH4 V N NC CH3 2
3 SPECIFICTIONS Table 2. BSOLUTE MXIMUM RTINGS Parameter Rating Units Operating Supply Voltage (V P V N ) 6.0 V Operating Temperature Range 40 to +85 C Storage Temperature Range 65 to +150 C C Voltage at any Channel Input (V N 0.5) to (V P + 0.5) V Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. Table 3. STNR OPERTING CONITIONS Parameter Rating Units Operating Temperature Range 40 to +85 C Package Power Rating SOT143 4 Package (CM SR) SC 74 Package (CM SO) MSOP 10 Package (CM MR) mw Table 4. ELECTRICL OPERTING CHRCTERISTICS (Note 1) Symbol Parameter Conditions Min Typ Max Units V P Operating Supply Voltage (V P V N ) V I P Operating Supply Current (V P V N ) = 3.3 V 8.0 V F iode Forward Voltage Top iode Bottom iode I F = 8 m, T = 25 C V I LEK Channel Leakage Current T = 25 C, V P = 5 V, V N = 0 V ±0.1 ±1.0 C IN Channel Input Capacitance t 1 MHz, V P = 3.3 V, V N = 0 V, V IN = 1.65 V 2.0 pf C IO Channel I/O to I/O Capacitance 1.5 pf V ES ES Protection Peak ischarge Voltage at any Channel Input, in System Contact ischarge per IEC Standard Human Body Model, MIL ST 883, Method 3015 T = 25 C (Notes 2 and 4) T = 25 C (Notes 3 and 4) ±8 ±15 kv V CL Channel Clamp Voltage Positive Transients Negative Transients T = 25 C, I PP = 1, t P = 8/20 S (Note 4) V R YN ynamic Resistance Positive Transients Negative Transients T = 25 C, I PP = 1, t P = 8/20 S (Note 4) ll parameters specified at T = 40 C to +85 C unless otherwise noted. 2. Standard IEC with C ischarge = 150 pf, R ischarge = 330, V P = 3.3 V, V N grounded. 3. Human Body Model per MIL ST 883, Method 3015, C ischarge = 100 pf, R ischarge = 1.5 k, V P = 3.3 V, V N grounded. 4. These measurements performed with no external capacitor on V P. 3
4 PERFORMNCE INFORMTION Input Channel Capacitance Performance Curves Figure 1. Typical Variation of C IN vs. V IN (f = 1 MHz, V P = 3.3 V, V N = 0 V, 0.1 F Chip Capacitor between V P and V N, 25C) Figure 2. Typical Variation of C IN vs. Temp (f = 1 MHz, V IN = 30 mv, V P = 3.3 V, V N = 0 V, 0.1 F Chip Capacitor between V P and V N ) 4
5 PERFORMNCE INFORMTION (Cont d) Typical Filter Performance (nominal conditions unless specified otherwise, 50 Environment) Figure 3. Insertion Loss (S21) vs. Frequency (0 V C Bias, V P = 3.3 V) Figure 4. Insertion Loss (S21) vs. Frequency (2.5 V C Bias, V P = 3.3 V) 5
6 PPLICTION INFORMTION esign Considerations In order to realize the maximum protection against ES pulses, care must be taken in the PCB layout to minimize parasitic series inductances on the Supply/Ground rails as well as the signal trace segment between the signal input (typically a connector) and the ES protection device. Refer to Figure 5, which illustrates an example of a positive ES pulse striking an input channel. The parasitic series inductance back to the power supply is represented by L 1 and L 2. The voltage V CL on the line being protected is: V CL = Fwd voltage drop of 1 + V SUPPLY + L 1 x d(i ES ) / dt+ L 2 x d(i ES ) / dt where I ES is the ES current pulse, and V SUPPLY is the positive supply voltage. n ES current pulse can rise from zero to its peak value in a very short time. s an example, a level 4 contact discharge per the IEC standard results in a current pulse that rises from zero to 30 mps in 1 ns. Here d(i ES )/dt can be approximated by I ES /t, or 30/(1x10 9 ). So just 10 nh of series inductance (L 1 and L 2 combined) will lead to a 300 V increment in V CL! Similarly for negative ES pulses, parasitic series inductance from the V N pin to the ground rail will lead to drastically increased negative voltage on the line being protected. The CM1293 has an integrated Zener diode between V P and V N. This greatly reduces the effect of supply rail inductance L 2 on V CL by clamping V P at the breakdown voltage of the Zener diode. However, for the lowest possible V CL, especially when V P is biased at a voltage significantly below the Zener breakdown voltage, it is recommended that a 0.22 μf ceramic chip capacitor be connected between V P and the ground plane. s a general rule, the ES Protection rray should be located as close as possible to the point of entry of expected electrostatic discharges. The power supply bypass capacitor mentioned above should be as close to the V P pin of the Protection rray as possible, with minimum PCB trace lengths to the power supply, ground planes and between the signal input and the ES device to minimize stray series inductance. V P L 2 POSITIVE SUPPLY RIL V CC 0.22 F ONE CHNNEL 2 1 L 1 PTH OF ES CURRENT PULSE I ESO CHNNEL INPUT 25 LINE BEING PROTECTE V CL SYSTEM OR CIRCUITRY BEING PROTECTE V N 0 GROUN RIL CHSSIS GROUN Figure 5. pplication of Positive ES Pulse between Input Channel and Ground 6
7 PCKGE IMENSIONS SOT 143 CSE ISSUE U E1 e E GUGE PLNE L2 ETIL L SETING PLNE NOTES: 1. IMENSIONING N TOLERNCING PER SME Y14.5M, CONTROLLING IMENSION: MILLIMETERS. 3. MXIMUM LE THICKNESS INCLUES LE FINISH. MINIM UM LE THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL. 4. IMENSIONS N E O NOT INCLUE MOL FLSH, PRO TRUSIONS, OR GTE BURRS. MOL FLSH, PROTRUSIONS, N GTE BURRS SHLL NOT EXCEE 0.25 PER SIE. IMENSION E1 OES NOT INCLUE INTERLE FLSH OR PROTRUSION. INTERLE FLSH N PROTRUSION SHLL NOT EXCEE 0.25 PER SIE. 5. IMENSIONS N E1 RE ETERMINE T TUM H. 6. TUMS N B RE ETERMINE T TUM H. b1 e1 1 B TOP VIEW SIE VIEW 3X b 0.20 M C -B c C SETING PLNE 0.10 C H ETIL EN VIEW c MILLIMETERS IM MIN MX b b c E E e 1.92 BSC e BSC L L BSC RECOMMENE SOLERING FOOTPRINT* X X 0.54 IMENSIONS: MILLIMETERS *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. 7
8 PCKGE IMENSIONS SC 74 CSE 318F 05 ISSUE N SCLE 2:1 H E E NOTES: 1. IMENSIONING N TOLERNCING PER NSI Y14.5M, CONTROLLING IMENSION: INCH. 3. MXIMUM LE THICKNESS INCLUES LE FINISH THICKNESS. MINIMUM LE THICKNESS IS THE MINIMUM THICKNESS OF BSE MTERIL F 01, 02, 03, 04 OBSOLETE. NEW STNR 318F (0.002) e 1 b L C MILLIMETERS INCHES IM MIN NOM MX MIN NOM MX b c E e L H E SOLERING FOOTPRINT* SCLE 10:1 mm inches *For additional information on our Pb Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLERRM/. 8
9 PCKGE IMENSIONS MSOP 10, 3x3 CSE 846E 01 ISSUE O SYMBOL MIN NOM MX b c E E1 E E e 0.50 BSC L L1 REF L2 θ 0.25 BSC 0º 8º ETIL TOP VIEW 2 c EN VIEW 1 e b SIE VIEW L2 Notes: (1) ll dimensions are in millimeters. ngles in degrees. (2) Complies with JEEC MO-187. ETIL L1 L FireWire is a registered trademark of pple Computer, Inc. i.link is a trademark of Sony Corporation. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. listing of SCILLC s product/patent coverage may be accessed at Marking.pdf. SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Typical parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. ll operating parameters, including Typicals must be validated for each customer application by customer s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/ffirmative ction Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICTION ORERING INFORMTION LITERTURE FULFILLMENT: Literature istribution Center for ON Semiconductor P.O. Box 5163, enver, Colorado US Phone: or Toll Free US/Canada Fax: or Toll Free US/Canada orderlit@onsemi.com N. merican Technical Support: Toll Free US/Canada Europe, Middle East and frica Technical Support: Phone: Japan Customer Focus Center Phone: ON Semiconductor Website: Order Literature: For additional information, please contact your local Sales Representative CM1293/
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Distributed by: www.jameco.com 1-800-831-44 The content and copyrights of the attached material are the property of its owner. Transient Voltage Suppressors Micro Packaged Diodes for ESD Protection The
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Power MOSFET V,.7 A, Single N Channel, SC 7 Features Low On Resistance Low Gate Threshold Voltage Halide Free This is a Pb Free Device V (BR)DSS R DS(on) MAX I D MAX Applications Low Side Load Switch DC
NUF8401MNT4G. 8-Channel EMI Filter with Integrated ESD Protection
8-Channel EMI Filter with Integrated ESD Protection The NUF841MN is an eight channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = 1 and C = 12 pf
P2I2305NZ. 3.3V 1:5 Clock Buffer
3.3V :5 Clock Buffer Functional Description P2I2305NZ is a low cost high speed buffer designed to accept one clock input and distribute up to five clocks in mobile PC systems and desktop PC systems. The
NTGS3441BT1G. Power MOSFET. -20 V, -3.5 A, Single P-Channel, TSOP-6. Low R DS(on) in TSOP-6 Package 2.5 V Gate Rating This is a Pb-Free Device
Power MOSFET - V, -. A, Single P-Channel, TSOP- Features Low R DS(on) in TSOP- Package. V Gate Rating This is a Pb-Free Device Applications Battery Switch and Load Management Applications in Portable Equipment
MBRA130LT3G NRVBA130LT3G. Surface Mount Schottky Power Rectifier. SMA Power Surface Mount Package SCHOTTKY BARRIER RECTIFIER 1.0 AMPERES, 30 VOLTS
MBR13LT3G, NRVB13LT3G Surface Mount Schottky Power Rectifier SM Power Surface Mount Package This device employs the Schottky Barrier principle in a metal to silicon power rectifier. Features epitaxial
NTHD4502NT1G. Power MOSFET. 30 V, 3.9 A, Dual N Channel ChipFET
NTHDN Power MOSFET V,.9 A, Dual N Channel ChipFET Features Planar Technology Device Offers Low R DS(on) and Fast Switching Speed Leadless ChipFET Package has % Smaller Footprint than TSOP. Ideal Device
NTA4001N, NVA4001N. Small Signal MOSFET. 20 V, 238 ma, Single, N Channel, Gate ESD Protection, SC 75
Small Signal MOSFET V, 8 ma, Single, N Channel, Gate ESD Protection, SC 75 Features Low Gate Charge for Fast Switching Small.6 x.6 mm Footprint ESD Protected Gate AEC Q Qualified and PPAP Capable NVA4N
NBXDBA V, MHz / MHz LVPECL Clock Oscillator
. V, 106.25 MHz / 212.5 MHz LVPECL Clock Oscillator The NBXBA012 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device
NJD2873T4G NJVNJD2873T4G. Power Transistors. NPN Silicon DPAK For Surface Mount Applications SILICON POWER TRANSISTORS 2 AMPERES 50 VOLTS 15 WATTS
NJD287TG, NJVNJD287TG Power Transistors NPN Silicon For Surface Mount pplications Designed for highgain audio amplifier applications. Features High DC Current Gain Low CollectorEmitter Saturation Voltage
NTR4502P, NVTR4502P. Power MOSFET. 30 V, 1.95 A, Single, P Channel, SOT 23
NTRP, NVTRP Power MOSFET V,.9 A, Single, P Channel, SOT Features Leading Planar Technology for Low Gate Charge / Fast Switching Low R DS(ON) for Low Conduction Losses SOT Surface Mount for Small Footprint
NTTFS5116PLTWG. Power MOSFET 60 V, 20 A, 52 m. Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant
Power MOSFET 6 V, 2 A, 52 m Features Low R DS(on) Fast Switching These Devices are Pb Free and are RoHS Compliant Applications Load Switches DC Motor Control DC DC Conversion MAXIMUM RATINGS ( unless otherwise
NTD5865NL. N-Channel Power MOSFET 60 V, 46 A, 16 m
N-Channel Power MOSFET 6 V, 6 A, 6 m Features Low Gate Charge Fast Switching High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free and are RoHS Compliant MAXIMUM RATINGS (
NTTFS5820NLTWG. Power MOSFET. 60 V, 37 A, 11.5 m. Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant
NTTFS582NL Power MOSFET 6 V, 37 A,.5 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
MBD110DWT1G MBD330DWT1G. Dual Schottky Barrier Diodes
, Dual Schottky Barrier Diodes Application circuit designs are moving toward the consolidation of device count and into smaller packages. The new SOT363 package is a solution which simplifies circuit design,
NTNUS3171PZ. Small Signal MOSFET. 20 V, 200 ma, Single P Channel, 1.0 x 0.6 mm SOT 1123 Package
NTNUS7PZ Small Signal MOSFET V, ma, Single P Channel,. x.6 mm SOT Package Features Single P Channel MOSFET Offers a Low R DS(on) Solution in the Ultra Small. x.6 mm Package. V Gate Voltage Rating Ultra
MMBZxxVAWT1G Series, SZMMBZxxVAWT1G Series. 40 Watt Peak Power Zener Transient Voltage Suppressors. SC 70 Dual Common Anode Zeners for ESD Protection
MMBZxxVAWTG Series, SZMMBZxxVAWTG Series 4 Watt Peak Power Zener Transient Voltage Suppressors SC 7 Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for
CAX803, CAX809, CAX Pin Microprocessor Power Supply Supervisors
3-Pin Microprocessor Power Supply Supervisors Description The CAX83, CAX89, and CAX81 are supervisory circuits that monitor power supplies in digital systems. The CAX83, CAX89, and CAX81 are direct replacements
NDD60N360U1 35G. N-Channel Power MOSFET. 100% Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant.
NDDN3U N-Channel Power MOSFET V, 3 m Features % Avalanche Tested These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS Compliant ABSOLUTE MAXIMUM RATINGS ( unless otherwise noted) V (BR)DSS R DS(ON)
MMBZ15VDLT3G MMBZ27VCLT1G SZMMBZ15VDLT3G. SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZ15VDLT1G, MMBZ27VCLT1G, SZMMBZ15VDLT1G, SZMMBZ27VCLT1G 40 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes
7WB Bit Bus Switch. The 7WB3126 is an advanced high speed low power 2 bit bus switch in ultra small footprints.
2-Bit Bus Switch The WB326 is an advanced high speed low power 2 bit bus switch in ultra small footprints. Features High Speed: t PD = 0.25 ns (Max) @ V CC = 4.5 V 3 Switch Connection Between 2 Ports Power
MMBZ15VDLT3G MMBZ27VCLT1G. 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT-23 Dual Common Cathode Zeners for ESD Protection
MMBZ5VDLT, MMBZ7VCLT Preferred s 40 Watt Peak Power Zener Transient Voltage Suppressors SOT- Dual Common Cathode Zeners for ESD Protection These dual monolithic silicon zener diodes are designed for applications
NTMS5835NL. Power MOSFET 40 V, 12 A, 10 m
Power MOSFET V, 2 A, m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated) Parameter
NTD5867NL. N-Channel Power MOSFET 60 V, 20 A, 39 m
N-Channel Power MOSFET 6 V, A, 39 m Features Low R DS(on) High Current Capability % Avalanche Tested These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise
MMQA Quad Common Anode Series. SC-74 Quad Monolithic Common Anode. Transient Voltage Suppressors for ESD Protection
MMQA Quad Common Anode Series Preferred Devices SC-74 Quad Monolithic Common Anode Transient Voltage Suppressors for ESD Protection This quad monolithic silicon voltage suppressor is designed for applications
MUN5332DW1, NSBC143EPDXV6, NSBC143EPDP6. Complementary Bias Resistor Transistors R1 = 4.7 k, R2 = 4.7 k
MUN5DW, NSBCEPDXV6, NSBCEPDP6 Complementary Bias Resistor Transistors R =.7 k, R =.7 k NPN and PNP Transistors with Monolithic Bias Resistor Network () PIN CONNECTIONS () () This series of digital transistors
NTMS5838NL. Power MOSFET 40 V, 7.5 A, 20 m
Power MOSFET V, 7.5 A, 2 m Features Low R DS(on) Low Capacitance Optimized Gate Charge These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS ( unless otherwise stated)
NBXDBA V, 75 MHz / 150 MHz LVPECL Clock Oscillator
. V, 75 MHz / 150 MHz LVPECL Clock Oscillator The NBXBA009 dual frequency crystal oscillator (XO) is designed to meet today s requirements for. V LVPECL clock generation applications. The device uses a
NTS2101P. Power MOSFET. 8.0 V, 1.4 A, Single P Channel, SC 70
NTS11P Power MOSFET 8. V, 1.4 A, Single P Channel, SC 7 Features Leading Trench Technology for Low R DS(on) Extending Battery Life 1.8 V Rated for Low Voltage Gate Drive SC 7 Surface Mount for Small Footprint
MMBTA06W, SMMBTA06W, Driver Transistor. NPN Silicon. Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V
Driver Transistor NPN Silicon Moisture Sensitivity Level: 1 ESD Rating: Human Body Model 4 kv ESD Rating: Machine Model 400 V Features S Prefix for Automotive and Other Applications Requiring Unique Site
NBXSBA024, NBXSBB024, NBXMBB V / 3.3 V, MHz LVPECL Clock Oscillator
NBXSBA0, NBXSBB0, NBXMBB0.5 V /. V, 6.08 MHz LVPECL Clock Oscillator The single frequency, crystal oscillator (XO) is designed to meet today s requirements for.5 V /. V LVPECL clock generation applications.
NSVEMD4DXV6T5G. Dual Bias Resistor Transistors. NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network
Dual Bias Resistor Transistors NPN and PNP Silicon Surface Mount Transistors with Monolithic Bias Resistor Network The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias
MMSD301T1G SMMSD301T1G, MMSD701T1G SMMSD701T1G, SOD-123 Schottky Barrier Diodes
MMSD3TG, SMMSD3TG, MMSD7TG, SMMSD7TG, SOD-3 Schottky Barrier Diodes The MMSD3T, and MMSD7T devices are spinoffs of our popular MMBD3LT, and MMBD7LT SOT3 devices. They are designed for highefficiency UHF
NVD5117PLT4G. Power MOSFET 60 V, 16 m, 61 A, Single P Channel
Power MOSFET 6 V, 16 m, 61 A, Single P Channel Features Low R DS(on) to Minimize Conduction Losses High Current Capability Avalanche Energy Specified AEC Q11 Qualified These Devices are Pb Free, Halogen
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
NTR4101P, NTRV4101P. Trench Power MOSFET 20 V, Single P Channel, SOT 23
NTRP, NTRVP Trench Power MOSFET V, Single P Channel, SOT Features Leading V Trench for Low R DS(on). V Rated for Low Voltage Gate Drive SOT Surface Mount for Small Footprint NTRV Prefix for Automotive
J5731. High Voltage PNP Silicon Power Transistors SILICON POWER TRANSISTORS 1.0 AMPERE 350 VOLTS, 15 WATTS
High Voltage PNP Silicon Power Transistors Designed for line operated audio output amplifier, SWITCHMODE power supply drivers and other switching applications. Features PNP Complements to the MJD7 thru
SMF5.0AT1G Series, SZSMF5.0AT1G Series. 200 W Transient Voltage Suppressor SOD-123 Flat Lead Package
SMF5.AT1G Series, SZSMF5.AT1G Series 2 W Transient Voltage Suppressor SOD-123 Flat Lead Package The SMF5.AT1G Series is designed to protect voltage sensitive components from high voltage, high energy transients.
MMBZxxxALT1G Series, SZMMBZxxxALT1G Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors
MMBZxxxALTG Series, SZMMBZxxxALTG Series 24 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed
MC100LVELT20 Product Preview 3.3VНLVTTL/LVCMOS to Differential LVPECL Translator Description The MC100LVELT20 is a 3.3 V TTL/CMOS to differential PECL
Product Preview 3.3VНLVTTL/LVCMOS to ifferential LVPECL Translator escription The is a 3.3 V TTL/CMOS to differential PECL translator. Because PECL (Positive ECL) levels are used, only + 3.3 V and ground
NTMS4801NR2G. Power MOSFET 30 V, 12 A, N Channel, SO 8
NTMSN Power MOSFET 3 V, A, N Channel, SO Features Low R DS(on) to Minimize Conduction Losses Low Capacitance to Minimize Driver Losses Optimized Gate Charge to Minimize Switching Losses This is a Pb Free
MMBZ5V6ALT1 Series. 24 and 40 Watt Peak Power Zener Transient Voltage Suppressors. SOT 23 Dual Common Anode Zeners for ESD Protection
4 and 4 Watt Peak Power Zener Transient Voltage Suppressors Dual Common Anode Zeners for ESD Protection These dual monolithic silicon Zener diodes are designed for applications requiring transient overvoltage
BAT54CLT3G SBAT54CLT1G. Dual Common Cathode Schottky Barrier Diodes 30 VOLT DUAL COMMON CATHODE SCHOTTKY BARRIER DIODES
BAT54CLTG, SBAT54CLTG Dual Common Cathode Schottky Barrier Diodes These Schottky barrier diodes are designed for high speed switching applications, circuit protection, and voltage clamping. Extremely low
MBRB1045G MBRD1045G, SBRB1045G, SBRD81045T4G. SWITCHMODE Schottky Power Rectifier. Surface Mount Power Package
MBRB5G, MBRD5G, SBRB5G, SBRD85TG Preferred Device SWITCHMODE Schottky Power Rectifier Surface Mount Power Package This series of Power Rectifiers employs the Schottky Barrier principle in a large metal
PZTA92T1. High Voltage Transistor. PNP Silicon SOT 223 PACKAGE PNP SILICON HIGH VOLTAGE TRANSISTOR SURFACE MOUNT
High Voltage Transistor PNP Silicon Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant MAXIMUM RATINGS (T C = 25 C unless otherwise noted) Rating Symbol Value Unit Collector-Emitter
SM05T1G Series, SZSM05T1G. Transient Voltage Suppressor Diode Array. SOT 23 Dual Common Anode Diodes for ESD Protection
, SZ Transient Voltage Suppressor Diode Array Dual Common Anode Diodes for ESD Protection These dual monolithic silicon TVS diodes are designed for applications requiring transient overvoltage protection
NUF6400MNTBG. 6-Channel EMI Filter with Integrated ESD Protection
6-Channel EMI Filter with Integrated ESD Protection The NUF64MU is a six channel (C R C) Pi style EMI filter array with integrated ESD protection. Its typical component values of R = and C = 5 pf deliver
MBR2045EMFST3G NRVB2045EMFST3G. Switch-mode Power Rectifiers SCHOTTKY BARRIER RECTIFIERS 20 AMPERES 45 VOLTS
MBR045EMFS, NRVB045EMFS Switch-mode Power Rectifiers These state of the art devices have the following features: Features Low Power Loss / High Efficiency New Package Provides Capability of Inspection
EFC2J004NUZ/D. Power MOSFET for 1-Cell Lithium-ion Battery Protection 12 V, 7.1 mω, 14 A, Dual N-Channel
EFCJNUZ Power MOSFET for 1-Cell Lithium-ion Battery Protection 1 V,.1 mω, 1, Dual N-Channel This Power MOSFET features a low on-state resistance. This device is suitable for applications such as power
MMSZ5221BT1 Series. Zener Voltage Regulators. 500 mw SOD 123 Surface Mount
MMSZ5BT Series Preferred Device Zener Voltage Regulators 5 mw SOD 3 Surface Mount Three complete series of Zener diodes are offered in the convenient, surface mount plastic SOD 3 package. These devices
NUP2105LT3G. Dual Line CAN Bus Protector SOT 23 DUAL BIDIRECTIONAL VOLTAGE SUPPRESSOR 350 W PEAK POWER
Dual Line CAN Bus Protector The NUP2105L has been designed to protect the CAN transceiver in high speed and fault tolerant networks from ESD and other harmful transient voltage events. This device provides
MMBFU310LT1G. JFET Transistor. N Channel. These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant. Features.
MMBFULT1G JFET Transistor N Channel Features These Devices are Pb Free, Halogen Free/BFR Free and are RoHS Compliant 2 SOURCE MAXIMUM RATINGS Rating Symbol Value Unit Drain Source Voltage V DS 25 Vdc Gate