Radiation hardened CMOS Image Sensors Development

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1 Radiation hardened CMOS Image Sensors Development Vincent Goiffon, ISAE-SUPAERO, Université de Toulouse, France CERN Radiation Working Group meeting 2017, April 13th

2 Outline ISAE-SUPAERO Image Sensor Research Team brief introduction ITER rad-hard camera development context Status of the radiation hardened CMOS Image Sensor development Demonstrator presentation Total Ionizing Dose tests: preliminary results Single Event Effects: expected behavior Displacement Damage Effect: expected behavior Perspectives

ISAE-SUPAERO introduction ISAE-SUPAERO : French public institute ( University) dedicated to higher education and research in Aerospace Engineering 500 permanent employees (150 professors/researchers)

3 ISAE-SUPAERO introduction ISAE-SUPAERO : French public institute ( University) dedicated to higher education and research in Aerospace Engineering 500 permanent employees (150 professors/researchers) 1500 Master students and 200 PhD students Image Sensor Research Team: Staff: Activities: 10 permanent staff (2 professors, 3 researchers, 4 design engineer, 1 engineer) 6 PhD students and 3 Post Doctoral Research Fellows Academic research and R&D in CMOS Image Sensors since 1994 ( 1 tape-out every 3 months) 3 CMOS Image Sensors embedded in space instruments currently orbiting earth Capabilities 6 dark and clean rooms for CIS characterization + 1 general purpose characterization clean room 8 workstations for integrated circuit design and simulation (electrical, TCAD ) 3

4 CIS technology: an overview CMOS Image Sensors (CIS) Most popular solid state imager technology (95% of the market) CIS = CMOS Integrated Circuit Designed for optical imaging applications Manufactured with a CMOS process optimized for imaging Typical CIS architecture 4

ITER remote handling imaging system ITER remote handling

low power/voltage Radiation hard (failure TID >> 1MGy(SiO 2 ))

1Mpix) Dedicated development required (funded by F4E) Camera

5 ITER remote handling imaging system ITER remote handling operations require imaging systems Compact, lightweight and low power/voltage Radiation hard (failure TID >> 1MGy(SiO 2 )) Gamma radiation only (plasma OFF) Color and high definition ( 1Mpix) Dedicated development required (funded by F4E) Camera overview: Optical System Rad-Hard Camera- On-A-Chip Illumination System 5

Camera Radiation Hardening Strategy Integrate all the required electronics on a single Rad Hard (RH) CMOS IC Color Filter Array RH Camera-on-a-Chip

6 Camera Radiation Hardening Strategy Integrate all the required electronics on a single Rad Hard (RH) CMOS IC Color Filter Array RH Camera-on-a-Chip No need for additional MGy RH electronics Very compact Complete control of the radiation hardness Decoders Readout chain Sequencer Pixel Array ADC 6

DD Drain to Source current (A) Drain to Source current (A) Basic Outline s 1E-04 1E-05 1E-06 1E-07 300 Mrad / 3 MGy TID MGy/Grad irradiation effects on N-MOSFETs (180 nm CIS) STD TID 1E-02 1E-03

7 DD Drain to Source current (A) Drain to Source current (A) Basic Outline s 1E-04 1E-05 1E-06 1E Mrad / 3 MGy TID MGy/Grad irradiation effects on N-MOSFETs (180 nm CIS) STD TID 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 TID ELT 300 Mrad / 3 MGy 1E Gate to Source voltage (V) Gate to Source voltage (V) Courtesy of Marc Gaillardin (CEA DAM) Gate Source Drain Standard N-MOSFET seriously 100 Mrad / 1 MGy ELT mandatory to avoid RINCE and sidewall leakage 7

8 Drain to Source current (A) Drain to Source current (A) Basic Outline s MGy/Grad irradiation effects on P-MOSFETs (180 nm CIS) STD 30 Mrad / 300 kgy ELT 1E-05 1E-03 1E-06 1E Mrad 1E-05 1E-07 1E-06 3 MGy 1E-08 1E-07 Gate 1E-09 TID 1E-08 Source 1E-09 1E-10 1E-10 TID Drain 1E-11 1E Gate to Source voltage (V) Gate to Source voltage (V) Courtesy of Marc Gaillardin (CEA DAM) Standard P-MOSFET unusable after 10 Mrad / 100 kgy ELT mandatory to avoid RINCE 8

polysilicon gate to shield the junction from the trapped positive charge: Principle

9 CMOS Image Sensor (CIS) Design : photodiode radiation hardening Issue with standard diode: peripheral oxide (STI here): Selected RHBD technique: use of a polysilicon gate to shield the junction from the trapped positive charge: Principle of the gated diode voluntary gate-to-n overlap to shield the junction 6 9

F4E ITER Rad-Hard Image Sensor Demonstrator Organization: 256x256-10µm-pitch-pixel-array Partially covered by color filters 4 different pixel design variations 10 bit ADC test structures 180 nm CMOS

10 F4E ITER Rad-Hard Image Sensor Demonstrator Organization: 256x256-10µm-pitch-pixel-array Partially covered by color filters 4 different pixel design variations 10 bit ADC test structures 180 nm CMOS Image Sensor Process RHBD techniques: Gate overlap photodiode design Exclusive use of ELT designs for N and P MOSFETs 1.8V and 3.3V transistors Irradiated (TID test) ON and OFF using: 60 Co ray up to 1 MGy / 100 Mrad (Moll, SCK-CEN) 10 kev x-rays up to 10 MGy / 1 Grad (CEA-DAM) 10

Unirradiated 10 MGy(SiO 2 ) 256x256 pixel demonstrator fully

11 Preliminary radiation hardness results Color images captured by the manufactured CMOS image sensor demonstrator: blue green red Unirradiated 10 MGy(SiO 2 ) 256x256 pixel demonstrator fully MGy(SiO 2 ) No significant sensitivity degradation 11

12 Main Radiation Induced Degradation: Dark Current Increase Standard PD: 10 7 X dark current (1Mrad) no longer functional at higher radiation dose Rad-Hard diodes 10 MGy/1 Grad Factor of 5 improvement between the first and second demonstrator (5X dark current reduction) Standard diode 1st demonstrator >10 4 X improvement 22 C 5X 2 nd demonstrator 1 Grad 12

13 Single Event Effects in CIS: a summary In CIS required integrated functions : The main SEE are Single Event Transients (SET) in pixel array Other effects are generally not an issue: SET in decoders or readout chain are infrequent and only corrupt one pixel or one row of a single frame CIS are generally immune to SEL and if not: Can be powered OFF to recover (if non-destructive) Can be hardened-by-design SEE in additional integrated functions (e.g. SEU in on-chip sequencers) can be an issue Requires a specific analysis of each additional CMOS function but can be mitigated by design 13

14 SEE illustration: MegaJoule (MJ) Class Inertial Confinement Fusion (ICF) Plasma Diagnostic Plasma diagnostics in MJ class ICF facilities radiation environment during each laser shot: 14 MeV neutrons Expected fluence: n.cm -2 Estimated flux > n.cm -2.s -1 Existing Plasma Diagnostics cannot withstand these conditions A X-ray Plasma Diagnostic demonstrator has been developed (with CEA DAM and UJM) to demonstrate the potential of CIS for this application LaserMegaJoule (LMJ) LLE, UR 14

15 Expected result (simulation) ICF X-ray Plasma Diagnostic Demonstrator: Results Without global reset mode With global reset mode No SEE, no functionality loss: full camera design robust to several cm -2.s -1 GR mode efficiently removes the neutron induce parasitic signal Ability of CIS based camera to capture an image at such a high neutron flux demonstrated

16 Displacement Damage (DD) Effects on CIS: A summary Main DD effects in CIS up to n/cm²: Dark Current Increase DD induced Dark Current increase can be anticipated by using: Damage Factors (such as Srour s one) for the mean value An empirical model for the full distribution These models can be used to optimize the design to modulate the effects (no real mitigation possible by design): Small depletion volume lower mean dark current, larger non-uniformities Large depletion volume higher mean dark current but less non-uniformity System level mitigation: cooling! 16

pixel pitches (4.5 / 7 / 9 and 14 µm) At low (3.10 10 ) and high (4.

17 Basic Outline s Displacement Damage Effects on CIS: Empirical Prediction Model Typical results of the prediction model: 4 CIS with 4 different pixel pitches (4.5 / 7 / 9 and 14 µm) At low ( ) and high ( ) fluence No fitting parameter 14 MeV n/cm² 14 MeV n/cm² 17

Summary A radiation hardened CMOS Image Sensor is being developed for Fusion for Energy (F4E) Targeted application: ITER Remote Handling TID radiation hardness has been evaluated up to 10 MGy/1Grad

18 Summary A radiation hardened CMOS Image Sensor is being developed for Fusion for Energy (F4E) Targeted application: ITER Remote Handling TID radiation hardness has been evaluated up to 10 MGy/1Grad on small-size demonstrators (256x256 pixel arrays) and results are promising SEE should not be a problem on this custom radiation hardened design Similar architectures tested without significant issue with heavy ions with a LET up to 67.7 MeV.cm²/mg (UCL) 14 MeV neutrons at flux exceeding n.cm -2.s -1 (Inertial Confinement Fusion Experiments) Empirical models exist to forecast the displacement damage induced degradation Only dark current increase could have an impact on this sensor performances Such effects should start to have a visible effect on the targeted camera design for neutron fluences higher than n.cm - ² 18

19 Perspectives Long term perspective: Develop the full-size radiation hardened camera-on-a-chip with all the required functions and confirm the TID radiation hardness level Short term perspective Perform SEE test on the current demonstrators Test at CHARM? Decoders Readout chain Perform high fluence displacement damage dose tests (10 13 n.cm - ² n.cm - ² range) Color Filter Array Sequencer Pixel Array ADC 19

20 Backup Slides 20

21 More about CIS technology

http://www2.imm.dtu.d k/courses/02216/rules 018/graphics/018Cross Section.

have: Optimized dielectric stack (reduced number of metal levels, planarization,

..) Optimized epitaxial layer and doping profiles (for photo-detection) Dedicated

22 k/courses/02216/rules 018/graphics/018Cross Section.gif CIS manufacturing process: CMOS vs CIS Compared to standard CMOS, CIS processes have: Optimized dielectric stack (reduced number of metal levels, planarization, anti-reflection coating, color filters, microlenses...) Optimized epitaxial layer and doping profiles (for photo-detection) Dedicated photodiode doping profiles Optimized threshold voltages Classical CMOS Process Front-side illuminated CIS process Back-side illuminated CIS process 22

23 Basic Outline s CIS technology: pixel architecture Two basic pixel designs used in most of CIS Conventional photodiode Pinned (buried) PhotoDiode (PPD) 23

24 Harsh Env. CIS, APS & MAPS? Feature CIS MAPS Active Pixel Sensor* Yes Yes CMOS Integrated Circuit Yes Yes Monolithic Yes Yes Dedicated CMOS process Yes No Optimized/dedicated photodiode doping profiles Optimized/dedicated optical interfaces (AR coating / color filters / microlenses / light-guide ) Yes Yes No No Usual purpose Optical imaging Particle detection CMOS Image Sensor = CMOS APS + optical imager design + dedicated CIS process *E. R. Fossum, Proc SPIE, vol. 1900,

25 More on TID effects on CIS 25

26 Basic Outline s Basic radiation effects: TID Ionizing radiation Polysilicon gate Polysilicon gate SiO 2 SiO 2 E H Trapped Charge H H E Silicon Hole trap H Si H Si Silicon H Si 26

27 Basic radiation effects: TID Polysilicon gate Ionizing radiation Polysilicon gate E SiO 2 SiO Trapped Charge H + H + H E Interface States H H H Silicon Si Si Silicon Si 27

28 Basic radiation effects: TID Ionizing radiation (X,, charged particles ) Generate electron-hole pairs in dielectrics Leading to the buildup of permanent defects: Oxide Trapped (OT) charge (positive in most cases) Interface states (IT) at Si/Oxide interface Si Polysilicon gate Trapped Charge + + Interface States H Si Silicon SiO 2 + Si 28

29 Basic Outline s TID effects in CIS MOSFETs: gate oxide Gate oxide trapped charge (+): Negative threshold voltage shift ( V th <0) Drain N+ Log(I) TID Gate STI Gate oxide interface states (x): Subthreshold slope decrease Log(I) V Gate + x + x + x N+ N+ + + x + + x + + x N+ TID V Pwell Source 29

30 Basic Outline s TID effects in CIS MOSFETs: STI Shallow Trench Isolation (STI) trapped charge (+): Sidewall (drain to source) leakage Drain N+ Further negative threshold voltage shift ( V th <0) called Radiation Induced Narrow Channel Effect (RINCE*) (Inter-device leakage) STI Gate Pwell *F. Faccio et al., IEEE TNS, Dec STI Gate Sidewall leakage + + N+ STI + + Source 30

Basic Outline s Enclosed Geometry: example of the ELT Enclosed Layout Transistor (ELT)* Circular gate design No more channel edges no more STI related effects No more RINCE

31 Basic Outline s Enclosed Geometry: example of the ELT Enclosed Layout Transistor (ELT)* Circular gate design No more channel edges no more STI related effects No more RINCE No more sidewall leakage Gate Source Drain Other enclosed geometry designs exist (see for exemple W. Snoeys et al, IEEE TNS, Aug ) *G. Anelli et al., IEEE TNS,

32 Drain to Source current (A) Drain to Source current (A) Outline 1E-04 1E-05 1E-06 1E Mrad / 3 MGy TID MGy/Grad irradiation effects on N-MOSFETs (180 nm CIS) STD TID 1E-02 1E-03 1E-04 1E-05 1E-06 1E-07 1E-08 TID ELT 300 Mrad / 3 MGy 1E Gate to Source voltage (V) Gate to Source voltage (V) Courtesy of Marc Gaillardin (CEA DAM) Gate Source Drain Standard N-MOSFET seriously 100 Mrad / 1 MGy ELT mandatory to avoid RINCE and sidewall leakage 32

33 Drain to Source current (A) Drain to Source current (A) Basic Outline s MGy/Grad irradiation effects on P-MOSFETs (180 nm CIS) STD 30 Mrad / 300 kgy ELT 1E-05 1E-03 1E-06 1E Mrad 1E-05 1E-07 1E-06 3 MGy 1E-08 1E-07 Gate 1E-09 TID 1E-08 Source 1E-09 1E-10 1E-10 TID Drain 1E-11 1E Gate to Source voltage (V) Gate to Source voltage (V) Courtesy of Marc Gaillardin (CEA DAM) Standard P-MOSFET unusable after 10 Mrad / 100 kgy ELT mandatory to avoid RINCE 33

Basic Outline s MGy/Grad irradiation effects: Pinned PhotoDiode (PPD) (4T pixel) Before Irradiation Depleted region well protected from the interfaces Ultra low dark current High Charge Transfer

34 Basic Outline s MGy/Grad irradiation effects: Pinned PhotoDiode (PPD) (4T pixel) Before Irradiation Depleted region well protected from the interfaces Ultra low dark current High Charge Transfer Efficiency (CTE) After Irradiation (high TID) Intense dark current Very poor CTE PMD Oxide Trapped charge (OT) Pinning layer depletion x x x x x x x x No Radiation-Hardening-By- Design Solution (thus far) PMD Interface Traps(IT) Large dark current 34

Irradiation (high TID) Short-circuit between diodes Intense dark current No CTE issue (no transfer) Large dark

35 Basic Outline s MGy/Grad irradiation effects: Conventional Photodiode (3T pixel) Before Irradiation Depletion region in contact with Si/SiO2 interface Higher dark current than PPD No CTE issue (no transfer) STI OT After Irradiation (high TID) Short-circuit between diodes Intense dark current No CTE issue (no transfer) Large dark current STI inversion (short circuit) x x x x x x Can be mitigated by design! STI IT Large dark current 35

36 Basic Outline s Basic TID radiation effects on CIS : a summary For MGy range CIS design Enclosed Geometries are mandatory for both N and P MOSFETs But gate oxide can still induce a threshold voltage shift Due to OT or IT In both N and P channel MOSFETs Both photodiodes (pinned and conventional) are serioulsy degraded by high levels of TID Conventional photodiode Large dark current increase recommended for high TID! Loss of functionality Radiation-Hardened-By-Design photodiodes are required: Solutions only exist for conventional photodiodes 36

37 Single Event Effects (SEE) 37

38 Single Event Effects in CIS: Basics Single Event Effect (SEE) = perturbation/degradation caused by a single energetic particle Main mechanism: Generation of a high density of e - /h + pairs along the particle track Leading to: Transient perturbation (Single Event Transient (SET)) Permanent change of a digital value (Single Event Upset (SEU)) Triggering of a parasitic thyristor (Single Event Lacthup) and many other possible parasitic effects! S G Si substrate D Courtesy of Marc Gaillardin (CEA DAM) 38

39 Single Event Effects in CIS: Basics What kind of SEE CIS are sensitive to? In theory: all kind, as any CMOS Mixed-Signal Integrated Circuit For this presentation, focus only on SEEs That are specific to CIS, i.e. SEEs in: Pixel arrays Analog readout chain Decoders Other optional integrated functions are not discussed here 39

Single Event Effects in CIS: pixel array For basic pixel

in-pixel memory) Only Single Event Transient (SET) SET: the ion

parasitic signal : Spreading over several pixels Lasting a single

40 Single Event Effects in CIS: pixel array For basic pixel architecture (3T/4T): No SEL (no in-pixel PMOSFET) No SEU (no in-pixel memory) Only Single Event Transient (SET) SET: the ion induced charge is collected by the photodiodes leading to a parasitic signal : Spreading over several pixels Lasting a single frame 120 pixels 1.2 mm 420 MeV Xe ions Valerian Lalucaa, NSREC MeV Kr ion 256 pixels 1.8 mm 40

41 Single Event Effects in CIS: SET in decoders If an ion strike the decoders during readout, a transient artefact can appear on the readout image Row address jump Usually not an issue: Low occurrence probability (compared to pixel SET) Transient effect that disappears on the next frame 41

such SEL thanks to thin epitaxial layer Generally disappears after powering

42 Basic Outline s Single Event Effects in CIS: SEL in decoders Latchup can also occur in decoders leading to permanent artefact CIS are often immune to such SEL thanks to thin epitaxial layer Generally disappears after powering OFF and ON the sensor (no permanent damage) Row decoder SEL Column decoder SEL 42

43 Inertial Confinement Fusion Experiment 43

44 Illustration: MegaJoule (MJ) Class Inertial Confinement Fusion (ICF) Plasma Diagnostic Plasma diagnostics in MJ class ICF facilities radiation environment during each laser shot: 14 MeV neutrons Expected fluence: n.cm -2 Estimated flux > n.cm -2.s -1 Existing Plasma Diagnostics cannot withstand these conditions A X-ray Plasma Diagnostic demonstrator has been developed (with CEA DAM and UJM) to demonstrate the potential of CIS for this application LaserMegaJoule (LMJ) LLE, UR 44

45 ICF X-ray Plasma Diagnostic principle At LLE OMEGA facility: 60 laser beams (40kJ) focus on a 1 mm target during 1 ps leading to a fusion reaction The X-ray signal emitted by the fusion plasma is imaged through: A Multi-pinholes array thanks to an X-ray-to-light converter deposited on top of the CIS An intense neutron pulse is also generated leading to SEE perturbations X-ray to Light Converter CIS custom camera 350 mm X-ray multi-pinholes array X-rays neutrons 350 mm Target (fusion reaction) 45

ICF X-ray Plasma Diagnostic principle Several experiments

Univ. Rochester, NY To approach MegaJoule class ICF experiment

inside the target chamber As close as possible to the target

46 ICF X-ray Plasma Diagnostic principle Several experiments performed since 2010 at the Laboratory for Laser Energetics of Univ. Rochester, NY To approach MegaJoule class ICF experiment conditions, the diagnostic demonstrator is inserted directly inside the target chamber As close as possible to the target (35 cm) Maximum neutron flux reached at CIS level a few cm -2.s -1 46

ICF X-ray Plasma Diagnostic Demonstrator: Hardening Approach Hardening at the sensor level: Selection of a simple and robust CIS architecture with only the required on-chip functions to reduce SEE

47 ICF X-ray Plasma Diagnostic Demonstrator: Hardening Approach Hardening at the sensor level: Selection of a simple and robust CIS architecture with only the required on-chip functions to reduce SEE sensitivity No real use of RHBD technique for this application System level hardening: Delay the acquisition of the X-ray plasma image to avoid the neutron pulse perturbation Use of a slow Radiation-to-Light Convertor Dump all the parasitic charge with a global reset feature Only perform critical operations (ADC, data transmission) after the neutron pulse Lasers on Target Neutron pulse Slow decay X-ray scintillator GLOBAL RST T0 +100ps +1µs Image acquisition and read-out 47

Expected result (simulation) ICF X-ray Plasma Diagnostic Demonstrator: Results Without

12000 40 10000 40 10000 50 8000 50 8000 60 6000 60 6000 70 4000 70 4000 80 80 90 2000 90

48 Expected result (simulation) ICF X-ray Plasma Diagnostic Demonstrator: Results Without global reset mode With global reset mode No SEE, no functionality loss: full camera design robust to several cm -2.s -1 GR mode efficiently removes the neutron induce parasitic signal Ability of CIS based camera to capture an image at such a high neutron flux demonstrated

49 Displacement Damage (DD) effects 49

based detectors and sensors DD effects can be anticipated accurately in most CIS DD effects can be modulated

50 Outline Displacement Damage (DD) Effects on CIS DD = result of non-ionizing interactions leading to displacement of silicon atoms Contrary to TID, DD effects exhibit an almost universal behavior in silicon based detectors and sensors DD effects can be anticipated accurately in most CIS DD effects can be modulated by design optimization but not really mitigated by design Courtesy of Antoine JAY (ISAE-SUPAERO) A. Jay, IEEE NSREC

Basic Outline s Displacement Damage Effects on CIS: Basics DD effects lead to the creation of SRH centers Can act as generation/recombination centers or as charge trap Main effects originating from

51 Basic Outline s Displacement Damage Effects on CIS: Basics DD effects lead to the creation of SRH centers Can act as generation/recombination centers or as charge trap Main effects originating from the photodiodes: Dark current increase (defect x in depletion region) Possible quantum efficiency reduction due to recombination centers x (usually not observed) Not considered: Charge trapping : no proven effect in CIS Type inversion* : not likely in CIS for typical fluences (<10 14 n/cm²) *M. Moll PhD. Thesis, 1999 x x x x x x x x PPD x x x x x x x x x x x x x E c Generation center E v e - h + Recombination center e - h + x x x x x TG x x x x x x x x x SRH generation centers SRH recombination centers x e - Trap x 51

Basic Outline s Dark frame no irradiation

Increase Frequency (arbitrary unit) 10 1 0.

neutron irradiation 0.001 0 0.5 1 1.5 2 2.

52 Basic Outline s Dark frame no irradiation Displacement Damage Induced Dark Current Increase Frequency (arbitrary unit) Before irradiation After 22 MeV neutron irradiation Dark current (fa) 60 Co -ray irradiation (TID effects only) Uniform gray level increase Non-uniform degradation (hot pixels) 52

53 Basic Outline s Displacement Damage Effects on CIS: Universal Damage Factor Srour et al. 2000* Universal Damage Factor applied to CIS Damage Factor Displacement Damage Dose I obs q K V dep D dd Mean dark current increase Depletion volume No fitting parameter At 23 C: K cm Verified on CIS from many foundries up to n/cm² *J.R. Srour and D. H. Lo, IEEE TNS, Dec s 1 (MeV/g) 1 C. Virmontois et al., IEEE TNS Aug

54 Displacement Damage Effects on CIS: Empirical Prediction Model* υ dark : exponential mean γ dark : convolution factor *Virmontois et al., IEEE TNS, Aug *Belloir et al., Optics Express, Feb Exponential dark current Probability Density Function (PDF) for low doses and small volumes (one dark current source per pixel): f υdark x = 1 υ dark exp x υ dark Convolution of the PDF at higher doses and larger volumes (superimposition of several dark current sources per pixel): f ΔIobs x = Poisson k = 1, μ f υdark x + Poisson k = 2, μ f υdark x f υdark x + μ = γ dark V dep DDD is the convolution parameter and represents the mean number of sources per pixel 5

Basic Outline s Displacement Damage Effects on CIS: Empirical Prediction Model In the same way as the Universal Damage Factor, the two parameters of this empirical model υ dark and γ dark : Appear to

55 Basic Outline s Displacement Damage Effects on CIS: Empirical Prediction Model In the same way as the Universal Damage Factor, the two parameters of this empirical model υ dark and γ dark : Appear to be constant for neutron/protons/ions of a few MeV to 500 MeV In practice, this empirical model can be used to anticipate the absolute DD induced dark current distribution Without any parameter adjustment Parameter values γ dark 1 50,000 µm-3 (TeV/g) -1 Average dark current per source υ dark C *Belloir et al., Optics Express, Feb source per pixel for a dose of 500 TeV/g in a 100 µm 3 depleted volume 55

56 A few references 56

57 A few references to get all the details ITER radiation hardened CMOS Image Sensor: V. Goiffon et al., Multi-MGy Radiation Hard CMOS Image Sensor: Design, Characterization and X/Gamma Rays Total Ionizing Dose Tests, IEEE Trans. Nucl. Sci., vol. 62, no. 6, pp , Dec V. Goiffon et al., Radiation Hardening of Digital Color CMOS Camera-on-a-Chip Building Blocks for Multi-MGy Total Ionizing Dose Environments, IEEE Trans. Nucl. Sci., vol. 64, no. 1, pp , Jan V. Goiffon et al., Total Ionizing Dose Effects on a Radiation Hardened CMOS Image Sensor Demonstrator for ITER Remote Handling, to be presented at 2017 NSREC. Single Event Effects in CIS: V. Lalucaa et al., Single-Event Effects in CMOS Image Sensors, IEEE Trans. Nucl. Sci., vol. 60, no. 4, pp , Aug V. Lalucaa et al., Single Event Effects in 4T Pinned Photodiode Image Sensors, IEEE Trans Nucl Sci, vol. 60, no. 6, Dec Inertial confinement CIS experiment details: V. Goiffon et al., Vulnerability of CMOS image sensors in megajoule class laser harsh environment, Opt. Express, vol. 20, no. 18, pp , Aug P. Paillet et al., Hardening Approach to Use CMOS Image Sensors for Fusion by Inertial Confinement Diagnostics, IEEE Trans Nucl Sci, vol. 60, no. 6, Dec Displacement damage effects in CIS: Belloir et al., Optics Express, Feb

CMOS Image Sensors in Harsh Radiation Environments

CMOS Image Sensors in Harsh Radiation Environments Vincent Goiffon, ISAE-SUPAERO, Université de Toulouse, France TWEPP 2016 - Topical Workshop on Electronics for Particle Physics 26-30 September 2016 Karlsruhe