EUVL Activities in China. Xiangzhao Wang Shanghai Inst. Of Opt. and Fine Mech. Of CAS. (SIOM) Shanghai, China.
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1 EUVL Activities in China Xiangzhao Wang Shanghai Inst. Of Opt. and Fine Mech. Of CAS. (SIOM) Shanghai, China.
2 Projection Optics Imaging System Surface Testing Optical Machining ML Coating Aberration Metrology Stage Source Mask Resist CONTENT
3 Projection Optics Surface testing ML Coating Projection Optics Machining Aberration Metrology Design
4 Imaging System Changchun institute of optics, fine mechanics and physics (CIOMP) NA of image:0.25,field size at wafer: mm 2, Composite WFE:0.23nm RMS, Reduction Ratio:1/5 Ref. Optical and precision Engineering, 22(8), 2014:
5 Surface Testing CIOMP Aspheric Surfaces testing with CGH Rotationally Asymmetric Surface Testing by Absolute Testing Method Spatial Filter Collimator Beam Splitter Reference Spherical Surface Laser TS Lens Imaging System Test Surface CCD Testing Error: 0.8 nm RMS Ref. Research on Ultra-Precise Aspheric Surface Testing,PhD thesis, University of Chinese academy of sciences, 2014 Testing Error: 0.1 nm RMS Ref. Research on Rotational Absolute Testing of the Optical Surface, Master thesis, University of Chinese academy of sciences, 2014
6 Optical Machining Magnetorheological Finishing (MRF) (0.008 λ rms, λ=632.8nm) Ref. Proc. of SPIE 9281, , 2014 Ion Beam Figuring (IBF) ( 0.314nm rms) Ref. Appl. Opt. 53, (2014) Ref. Optical Engineering 53(9), , (2014) National University of Defense Technology (NUDT)
7 ML Coating CIOMP Multilayer analysis model Multilayer design Ref. Optics Communications 332, , 2015 Ref. PRC Patent, CN A,2014
8 Aberration Metrology Shanghai Institute of Optics and Fine Mechanics (SIOM) Metrology Lab Metrology Experiment Vacuum Chamber Metrology Tower Projection Optics Metrology System Point diffraction interferometry. Aberration Metrology repeatability:
9 Stage Tsinghua University Six degree-of-freedom magnetic levitation micro stage Ref. CN A, PRC Patent, 2013 Ref. In Intelligent Control and Automation (WCICA), th World Congress on, pp IEEE, 2014.
10 SOURCE SIOM LPP EUV source based on Sn droplet (Goal: 10 W power, 50 ~100kHz repetion rate) Fundamental Experiment Setup (LPP source) (Output of 13.5nm EUV light has been achieved) Sn droplet Generator ( Droplet diameter 100 m, repetition rate 20KHz) Ref. Poster, international workshop on EUV lithography 2014; Poster, SPIE Advanced Lithography 2014.
11 SOURCE Harbin Institute of Technology Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source, Infrared and Laser Engineering, 43(9) 2873 (2014) Time behavior and optimum conditions for the Xe gas extreme ultraviolet source, Acta. phys. Sin, 62(24) , (2013) Influence of plasma size on discharge extreme ultraviolet source, High Power Laser and Particle Beams, 25(10)2631,(2013) Huazhong Univ. of Sci. & Tech. Experiment study on laser produced tin droplet plasma extreme ultraviolet light source, Acta. phys. Sin, 64(7) , (2015) Emission properties of Tin droplets laser-produced-plasma light sources, Proc. SPIE. 9048, 90481V-1, (2014) Detecting tin droplet used for EUV source, High Power Laser and Particle Beams, 26(12) ,(2014) Influence of capillary inner radius on Xe gas discharge extreme ultraviolet source, Infrared and Laser Engineering, 43(9) 2873 (2014)
12 MASK Inst. Of Micro. Of CAS. (a) (b) CD < 100nm (c) (d) EUVL mask fabrication process development EUVL mask fabrication (32nm node) Fabricated EUVL mask. (a) photograph of the mask, (b) Layout of 6 inch EUVL mask microscope pictures of the mask patterns, (c) and (d) scanning electron microscope pictures of the mask patterns Ref: ACTA OPTICA SINICA, 33(10), ,(2013).
13 MASK SIOM EUVL mask defect modeling and simulation (amplitude and phase defects) EUVL mask modeling and simulation (shadowing effect, defocus effect, OPE, pattern shift ) EUVL mask defect inspection based on aerial image and lithography simulation EUVL mask related lithography simulation at the Shanghai Inst. Of Opt. and Fine Mech. EUVL mask defect compensation (optimal pattern shift determination, new method development) Vector Imaging theory and model Dr. LiTHO (Lithography simulation software) Refs: ACTA OPTICA SINICA, 35(6), (2015); ACTA OPTICA SINICA, 35(8), (2015, to be published); J. Micro/Nanolith. MEMS MOEMS, 13(3), (2014); Proc. SPIE, 9048, 90483E (2014); ACTA OPTICA SINICA, 34(9), (2014); J. Vac. Sci. Technol. B, 30(3), (2012); ACTA OPTICA SINICA,32(7) (2012); ACTA OPTICA SINICA,32(8) (2012); Proc. SPIE 8171, 81710N (2011); ACTA OPTICA SINICA, 31(4) (2011); PRC Patents, , , ,
14 RESIST Inst. Of Chem. Of CAS. Resist Outgassing system New photoresist materials development CD: 32nm LWR(linewidth roughness) <2.5nm SEM pattern, photoresist FPT-8Boc+PAG(5wt% of FPT- 8Boc)+TOA(10wt% of PAG) Ref: SCIENCE CHINA Chemistry, 57(12),1746,(2014). PRC Patents : , Investigation of outgassing of EUV resist (pressure, different components, different concentrations, species )
15 Projection Optics Imaging System Surface Testing Optical Machining ML Coating Aberration Metrology Stage Source Mask Resist CONTENT
16 Thank you for your attention! Xiangzhao Wang Shanghai Inst. Of Opt. and Fine Mech. Of CAS. (SIOM) Shanghai, China.
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