STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5
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1 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 N-channel 800 V, 3.5 Ω typ., 2 A Zener-protected SuperMESH 5 Power MOSFET in DPAK, TO-220FP, TO-220 and IPAK packages Datasheet production data TAB Features TAB DPAK 3 TO-220FP 2 3 Order codes V DS R DS(on) max I D P TOT STD2N80K5 45 W STF2N80K5 20 W 800 V 4.5 Ω 2 A STP2N80K5 45 W STU2N80K5 TO TAB Figure. Internal schematic diagram D(2, TAB) IPAK 3 2 TO-220 worldwide best R DS(on) Worldwide best FOM (figure of merit) Ultra low gate charge 00% avalanche tested Zener-protected Applications Switching applications G() S(3) AM0476v Description These devices are N-channel Power MOSFETs developed using SuperMESH 5 technology. This revolutionary, avalanche-rugged, high voltage Power MOSFET technology is based on an innovative proprietary vertical structure. The result is a drastic reduction in on-resistance and ultra low gate charge for applications which require superior power density and high efficiency. Table. Device summary Order codes Marking Package Packaging STD2N80K5 DPAK Tape and reel STF2N80K5 STP2N80K5 2N80K5 TO-220FP TO-220 Tube STU2N80K5 IPAK February 204 DocID Rev 2 /23 This is information on a product in full production. 23
2 Contents STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Contents Electrical ratings Electrical characteristics Electrical characteristics (curves) Test circuits Package mechanical data Packaging information Revision history /23 DocID Rev 2
3 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical ratings Electrical ratings Table 2. Absolute maximum ratings Value Symbol Parameter DPAK, TO-220, IPAK TO-220FP Unit V GS Gate- source voltage 30 V I D Drain current (continuous) at T C = 25 C 2 () A I D Drain current (continuous) at T C = 00 C.3 A (2) I DM Drain current (pulsed) 8 A P TOT Total dissipation at T C = 25 C W Max current during repetitive or single pulse I AR 0.5 A avalanche (pulse width limited by T jmax ) E AS dv/dt (3) dv/dt (4) Single pulse avalanche energy (starting T J = 25 C, I D =I AS, V DD = 50 V). For TO-220FP limited by maximum junction temperature. 2. Pulse width limited by safe operating area. 3. I SD 2 A, di/dt 00 A/μs, peak V DS V (BR)DSS 4. V DS 640 V 60.5 mj Peak diode recovery voltage slope 4.5 V/ns MOSFET dv/dt ruggedness 50 V/ns T j Operating junction temperature C -55 to 50 T stg Storage temperature C Table 3. Thermal data Symbol Parameter Value DPAK TO-220FP TO-220 IPAK Unit R thj-case Thermal resistance junction-case R thj-pcb Thermal resistance junction-pcb 50 () R thj-amb Thermal resistance junction-amb C/W. When mounted on FR-4 board of inch², 2 oz Cu. DocID Rev 2 3/23
4 Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 2 Electrical characteristics (T CASE = 25 C unless otherwise specified). Table 4. On/off states Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)DSS I DSS Drain-source breakdown voltage (V GS = 0) Zero gate voltage drain current (V GS = 0) I D = ma 800 V V DS = 800 V μa V DS = 800 V T j =25 C 50 μa I GSS Gate body leakage current (V DS = 0) V GS = ± 20 V ±0 μa V GS(th) Gate threshold voltage V DS = V GS, I D = 00 μa V R DS(on) Static drain-source onresistance V GS = 0 V, I D = A Ω Table 5. Dynamic Symbol Parameter Test conditions Min. Typ. Max. Unit C iss Input capacitance pf C oss Output capacitance V DS =00 V, f= MHz, V GS =0-8 - pf C rss Reverse transfer capacitance pf C o(tr) () Equivalent capacitance time related V GS = 0, V DS = 0 to 640 V pf (2) Equivalent capacitance C o(er) pf energy related R G Intrinsic gate resistance f = MHz, I D =0-8 - Ω Q g Total gate charge nc Q gs Gate-source charge V DD = 640 V, I D = 2 A V GS =0 V nc Q gd Gate-drain charge nc. Time related is defined as a constant equivalent capacitance giving the same charging time as C oss when V DS increases from 0 to 80% V DSS 2. Energy related is defined as a constant equivalent capacitance giving the same stored energy as C oss when V DS increases from 0 to 80% V DSS 4/23 DocID Rev 2
5 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics Table 6. Switching times Symbol Parameter Test conditions Min. Typ. Max. Unit t d(on) Turn-on delay time ns t r Rise time V DD = 400 V, I D = A, ns t d(off) Turn-off delay time R G =4.7 Ω, V GS =0 V ns t f Fall time ns Table 7. Source drain diode Symbol Parameter Test conditions Min. Typ. Max. Unit I SD Source-drain current - 2 A () I SDM Source-drain current (pulsed) - 8 A V (2) SD Forward on voltage I SD = 2 A, V GS =0 -.5 V t rr Reverse recovery time ns Q rr Reverse recovery charge I SD = 2 A, V DD = 60 V di/dt = 00 A/μs, - μc I RRM Reverse recovery current - 8 A t rr Reverse recovery time I SD = 2 A,V DD = 60 V ns Q rr Reverse recovery charge di/dt=00 A/μs, -.45 μc I RRM Reverse recovery current Tj=50 C A. Pulse width limited by safe operating area 2. Pulsed: pulse duration = 300 μs, duty cycle.5% Table 8. Gate-source Zener diode Symbol Parameter Test conditions Min. Typ. Max. Unit V (BR)GSO Gate-source breakdown voltage I GS = ± ma, I D = V The built-in back-to-back Zener diodes have been specifically designed to enhance not only the device s ESD capability, but also to make them capable of safely absorbing any voltage transients that may occasionally be applied from gate to source. In this respect, the Zener voltage is appropriate to achieve efficient and cost-effective protection of device integrity. The integrated Zener diodes thus eliminate the need for external components. DocID Rev 2 5/23
6 Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 2. Electrical characteristics (curves) Figure 2. Safe operating area for DPAK and IPAK Figure 3. Thermal impedance for DPAK and IPAK ID (A) AM8072v 0 0. Operation in this area is Limited by max RDS(on) Tj=50 C Tc=25 C Single pulse VDS(V) 0ms 00µs ms 0ms Figure 4. Safe operating area for TO-220FP Figure 5. Thermal impedance for TO-220FP ID (A) AM8073v 0 0. Operation in this area is Limited by max RDS(on) Tj=50 C Tc=25 C Single pulse VDS(V) 0µs 00µs ms 0ms Figure 6. Safe operating area for TO-220 Figure 7. Thermal impedance for TO-220 ID (A) AM8074v 0. Operation in this area is Limited by max RDS(on) 0µs 00µs ms 0ms Tj=50 C Tc=25 C Single pulse VDS(V) 6/23 DocID Rev 2
7 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Electrical characteristics Figure 8. Output characteristics Figure 9. Transfer characteristics ID (A) 3.0 VGS=0, V AM8075v ID (A) VDS=20V AM8085v 2.5 9V V V 6V VDS(V) Figure 0. Gate charge vs gate-source voltage VGS(V) Figure. Static drain-source on-resistance VGS (V) 2 VDS AM8076v VDS (V) 600 RDS(on) (Ω) 6 VGS=0V AM8077v Qg(nC) ID(A) Figure 2. Capacitance variations Figure 3. Output capacitance stored energy C (pf) AM8078v Eoss (µj) AM8079v Ciss 2 0 Coss Crss VDS(V) VDS(V) DocID Rev 2 7/23
8 Electrical characteristics STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 4. Normalized gate threshold voltage vs temperature Figure 5. Normalized on-resistance vs temperature VGS(th) (norm).2. ID=00 µa AM8082v RDS(on) (norm) 2.5 ID= A VGS=0 V AM808v TJ( C) TJ( C) Figure 6. Normalized V DS vs temperature Figure 7. Source-drain diode forward characteristics VDS (norm). ID=mA AM8083v VSD (V) TJ=-50 C AM8084v TJ=25 C TJ=50 C TJ( C) ISD(A) Figure 8. Maximum avalanche energy vs starting T J EAS (mj) 60 AM8086v TJ( C) 8/23 DocID Rev 2
9 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Test circuits 3 Test circuits Figure 9. Switching times test circuit for resistive load Figure 20. Gate charge test circuit VDD VGS VD RG RL D.U.T μf 3.3 μf VDD Vi=20V=VGMAX 2200 μf 2V IG=CONST 2.7kΩ 47kΩ 00Ω 00nF D.U.T. kω VG PW 47kΩ PW kω AM0468v AM0469v Figure 2. Test circuit for inductive load switching and diode recovery times Figure 22. Unclamped inductive load test circuit G 25 Ω D S A D.U.T. B A FAST DIODE B A B D L=00μH μf μf VDD VD ID L 2200 μf 3.3 μf VDD G RG S Vi D.U.T. AM0470v Pw AM047v Figure 23. Unclamped inductive waveform Figure 24. Switching time waveform V(BR)DSS ton toff VD tdon tr tdoff tf ID IDM 0 90% 0% VDS 0% 90% VDD VDD VGS 90% AM0472v 0 0% AM0473v DocID Rev 2 9/23
10 Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in different grades of ECOPACK packages, depending on their level of environmental compliance. ECOPACK specifications, grade definitions and product status are available at: ECOPACK is an ST trademark. 0/23 DocID Rev 2
11 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data Figure 25. DPAK (TO-252) type A drawing _M_type_A DocID Rev 2 /23
12 Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Table 9. DPAK (TO-252) type A mechanical data Dim. mm Min. Typ. Max. A A A b b c c D D 5.0 E E 4.70 e 2.28 e H L (L) 2.80 L L R 0.20 V /23 DocID Rev 2
13 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data Figure 26. DPAK (TO-252) type A footprint (a) Footprint_REV_M_type_A a. All dimensions are in millimeters DocID Rev 2 3/23
14 Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 27. TO-220FP drawing 70250_Rev_K_B 4/23 DocID Rev 2
15 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data Table 0. TO-220FP mechanical data Dim. mm Min. Typ. Max. A B D E F 0.75 F.5.70 F G G H L2 6 L L L L L Dia DocID Rev 2 5/23
16 Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 28. TO-220 drawing 6/23 DocID Rev 2
17 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data Table. TO-220 mechanical data Dim. mm Min. Typ. Max. A b b.4.70 c D D.27 E e e F H J L 3 4 L L L P Q DocID Rev 2 7/23
18 Package mechanical data STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Figure 29. IPAK (TO-25) drawing _K 8/23 DocID Rev 2
19 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Package mechanical data Table 2. IPAK (TO-25) mechanical data DIM mm. min. typ. max. A A b b b B c c D E e 2.28 e H 6.0 L L L V 0 DocID Rev 2 9/23
20 Packaging information STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 5 Packaging information Figure 30. Tape for DPAK 0 pitches cumulative tolerance on tape +/- 0.2 mm T Top cover tape P0 D P2 E B K0 B0 F W For machine ref. only including draft and radii concentric around B0 A0 P D User direction of feed R User direction of feed Bending radius AM08852v 20/23 DocID Rev 2
21 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Packaging information REEL DIMENSIONS Figure 3. Reel for DPAK 40mm min. T Access hole At slot location D B C A N Full radius Tape slot in core for tape start 25 mm min. width G measured at hub AM0885v2 Table 3. DPAK tape and reel mechanical data Tape Reel Dim. mm mm Dim. Min. Max. Min. Max. A A 330 B B.5 B 2. C D.5.6 D 20.2 D.5 G E N 50 F T 22.4 K P Base qty P Bulk qty P R 40 T W DocID Rev 2 2/23
22 Revision history STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 6 Revision history Table 4. Document revision history Date Revision Changes -Jul-203 First release. 8-Feb Added: IPAK package Modified: E AS value in Table 2 Modified: R thj-case in Table 3 Modified: typical values in Table 5, 6 and 7 Added: Section 2.: Electrical characteristics (curves) Updated: Figure 25, 26 and Table 9 Added: Table 2 and Figure 29 Minor text changes 22/23 DocID Rev 2
23 STD2N80K5, STF2N80K5, STP2N80K5, STU2N80K5 Please Read Carefully: Information in this document is provided solely in connection with ST products. STMicroelectronics NV and its subsidiaries ( ST ) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described herein at any time, without notice. All ST products are sold pursuant to ST s terms and conditions of sale. Purchasers are solely responsible for the choice, selection and use of the ST products and services described herein, and ST assumes no liability whatsoever relating to the choice, selection or use of the ST products and services described herein. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. If any part of this document refers to any third party products or services it shall not be deemed a license grant by ST for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoever of such third party products or services or any intellectual property contained therein. UNLESS OTHERWISE SET FORTH IN ST S TERMS AND CONDITIONS OF SALE ST DISCLAIMS ANY EXPRESS OR IMPLIED WARRANTY WITH RESPECT TO THE USE AND/OR SALE OF ST PRODUCTS INCLUDING WITHOUT LIMITATION IMPLIED WARRANTIES OF MERCHANTABILITY, FITNESS FOR A PARTICULAR PURPOSE (AND THEIR EQUIVALENTS UNDER THE LAWS OF ANY JURISDICTION), OR INFRINGEMENT OF ANY PATENT, COPYRIGHT OR OTHER INTELLECTUAL PROPERTY RIGHT. ST PRODUCTS ARE NOT DESIGNED OR AUTHORIZED FOR USE IN: (A) SAFETY CRITICAL APPLICATIONS SUCH AS LIFE SUPPORTING, ACTIVE IMPLANTED DEVICES OR SYSTEMS WITH PRODUCT FUNCTIONAL SAFETY REQUIREMENTS; (B) AERONAUTIC APPLICATIONS; (C) AUTOMOTIVE APPLICATIONS OR ENVIRONMENTS, AND/OR (D) AEROSPACE APPLICATIONS OR ENVIRONMENTS. WHERE ST PRODUCTS ARE NOT DESIGNED FOR SUCH USE, THE PURCHASER SHALL USE PRODUCTS AT PURCHASER S SOLE RISK, EVEN IF ST HAS BEEN INFORMED IN WRITING OF SUCH USAGE, UNLESS A PRODUCT IS EXPRESSLY DESIGNATED BY ST AS BEING INTENDED FOR AUTOMOTIVE, AUTOMOTIVE SAFETY OR MEDICAL INDUSTRY DOMAINS ACCORDING TO ST PRODUCT DESIGN SPECIFICATIONS. PRODUCTS FORMALLY ESCC, QML OR JAN QUALIFIED ARE DEEMED SUITABLE FOR USE IN AEROSPACE BY THE CORRESPONDING GOVERNMENTAL AGENCY. Resale of ST products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by ST for the ST product or service described herein and shall not create or extend in any manner whatsoever, any liability of ST. ST and the ST logo are trademarks or registered trademarks of ST in various countries. Information in this document supersedes and replaces all information previously supplied. The ST logo is a registered trademark of STMicroelectronics. All other names are the property of their respective owners. 204 STMicroelectronics - All rights reserved STMicroelectronics group of companies Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Philippines - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America DocID Rev 2 23/23
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Datasheet N-channel 620 V, 2.9 Ω typ., 2.2 A MDmesh K3 Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD2N62K3 STF2N62K3 620 V 3.6 Ω 2.2 A DPAK TO-220FP
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N-channel 650 V, 1.1 Ω typ., 5.4 A SuperMESH3 Power MOSFET in TO-220FP, I²PAKFP, IPAK Features Datasheet production data Order codes V DSS R DS(on) max. I D Ptot STF6N65K3 STFI6N65K3 650 V < 1.3 Ω 5.4
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STF33N60M2, STI33N60M2, STP33N60M2, STW33N60M2 N-channel 600 V, 0.108 Ω typ., 26 A MDmesh II Plus low Q g Power MOSFETs in TO-220FP, I 2 PAK, TO-220 and TO-247 packages Datasheet - production data TAB
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STB21N90K5, STF21N90K5, STP21N90K5, STW21N90K5 N-channel 900 V, 0.25 Ω typ., 18.5 A Zener-protected SuperMESH 5 Power MOSFET in a D 2 PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data
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STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in DPAK, TO-220FP and TO-220 packages Datasheet - production data TAB Features DPAK TAB Order
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STB270N4F3 STI270N4F3 N-channel 40 V, 1.6 mω, 160 A, D 2 PAK, I 2 PAK STripFET III Power MOSFET Features Type V DSS R DS(on) max I D P TOT STB270N4F3 40 V < 2.0 mω 160 A 330 W STI270N4F3 40 V < 2.6 mω
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STD3NF4LT N-channel 4 V,.3 Ω typ., 3 A, STripFET II Power MOSFET in a DPAK package Features Datasheet production data Order code V DSS R DS(on) max I D STD3NF4LT 4 V
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Features N-channel 75 V, 0.0092 Ω typ., 78 A STripFET DeepGATE Power MOSFET in a TO-220 package Datasheet production data Type V DSS R DS(on) max I D TAB STP75N75F4 75 V < 0.011 Ω 78 A N-channel enhancement
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N-channel 100 V, 0.0034 Ω typ., 110 A, STripFET F7 Power MOSFET in a H 2 PAK-2 package Features Datasheet production data Order code V DS R DS(on)max I D P TOT STH150N10F7-2 100 V 0.0039 Ω 110 A 250 W
More informationFeatures. Switching applications Figure 1. Internal schematic diagram. Description. AM15572v1. . Table 1. Device summary
N-channel 500 V, 0.325 Ω typ.,10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet - production data Order code V DS R DS(on) max I D TAB DPAK 1 3 STD12N50M2 500 V 0.38 Ω 10 A Extremely low
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STB4N62K3, STD4N62K3 N-channel 620 V, 1.7 Ω typ., 3.8 A SuperMESH3 Power MOSFETs in D²PAK and DPAK packages Features Datasheet - production data Order codes V DS R DS(on) max. I D P W TAB TAB STB4N62K3
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Automotive grade N-channel 500 V, 0.23 Ω, 17 A, Zener-protected SuperMESH Power MOSFET in a D 2 PAK package Features Datasheet - production data TAB 3 1 D²PAK Figure 1. Internal schematic diagram D(2)
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Datasheet N-channel 600 V, 0.86 Ω typ., 5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order codes V DS @ T Jmax R DS(on) max. I D STD7N60M2 STP7N60M2
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STB100N10F7, STD100N10F7, STF100N10F7, STP100N10F7 N-channel 100 V, 0.0068 Ω typ., 80 A, STripFET VII DeepGATE Power MOSFET in D 2 PAK, DPAK, TO-220FP and TO-220 Datasheet - production data TAB TAB Features
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STL60N10F7 N-channel 100 V, 0.013 Ω typ., 12 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data 1 2 3 4 PowerFLAT 5x6 Figure 1. Internal schematic diagram
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STD10NM60ND, STF10NM60ND STP10NM60ND N-channel 600 V, 0.57 Ω, 8 A, DPAK, TO-220FP, TO-220 FDmesh II Power MOSFET (with fast diode) Features Order codes STD10NM60ND STF10NM60ND STP10NM60ND V DSS @T J max
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N-channel 100 V, 1.9 mω typ., 180 A STripFET VII DeepGATE Power MOSFET in H 2 PAK-2 and H 2 PAK-6 packages Features Datasheet - production data Order codes V DS R DS(on) max. I D TAB TAB STH310N10F7-2
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Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in TO-220FP and TO-220 packages Datasheet production data Order codes V DSS R DS(on) max I D P TOT TAB STF20NK50Z STP20NK50Z
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N-channel 60 V, 1.7 mω typ., 180 A STripFET VI DeepGATE Power MOSFET in H²PAK-6 package Features Datasheet - preliminary data Order code V DS R DS(on) max I D TAB 1 1 H 2 PAK-6 7 STH260N6F6-6 60 V 2.4
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STD60N3LH5, STP60N3LH5 STU60N3LH5, STU60N3LH5-S N-channel 30 V, 0.0072 Ω, 48 A DPAK, IPAK, Short IPAK, TO-220 STripFET V Power MOSFET Features Order codes V DSS R DS(on) max I D STD60N3LH5 30 V 0.008 Ω
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Datasheet N-channel 600 V, 1.3 Ω typ., 3.5 A, MDmesh M2 Power MOSFETs in DPAK, TO-220 and IPAK packages TAB TAB Features DPAK 1 3 TAB TO-220 1 2 3 Order code V DS @ T Jmax R DS(on) max. I D STD5N60M2 STP5N60M2
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STB70N10F4, STD70N10F4 STP70N10F4, STW70N10F4 N-channel 100 V, 0.015 Ω, 60 A, STripFET DeepGATE Power MOSFET in TO-220, DPAK, TO-247, D 2 PAK Features Type V DSS R DS(on) max I D STB70N10F4 100 V < 0.0195
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Datasheet N-channel 500 V, 0.24 Ω typ., 13 A MDmesh M2 Power MOSFETs in DPAK, TO-220FP and TO-220 packages TAB 3 2 1 DPAK Features Order code V DS at T J max. R DS(on) max. I D Packages TAB STD16N50M2
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N-channel 600 V, 0.03 Ω typ., 68 A MDmesh M2 Power MOSFET in a TO-247 package Features Datasheet production data Order codes V DS @ T Jmax R DS(on) max I D STW70N60M2 650 V 0.040 Ω 68 A TO-247 1 2 3 Extremely
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STB34NM60ND, STF34NM60ND, STP34NM60ND, STW34NM60ND N-channel 600 V, 0.097 Ω typ., 29 A FDmesh II Power MOSFET (with fast diode) in D 2 PAK, TO-220FP, TO-220 and TO-247 Datasheet production data TAB Features
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STW57N65M5, STWA57N65M5 N-channel 650 V, 0.056 Ω typ., 42 A MDmesh V Power MOSFETs in TO-247 and TO-247 long leads packages Features Datasheet - production data Order codes V DS @ T Jmax R DS(on) max I
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STL90N10F7 N-channel 100 V, 0.009 Ω typ., 16 A STripFET VII DeepGATE Power MOSFETs in a PowerFLAT 5x6 package Features Datasheet - preliminary data Order code V DS @ T Jmax R DS(on) max STL90N10F7 100
More informationFeatures. Order code V DS R DS(on) max I D P TOT. Description. Table 1. Device summary. Order code Marking Packages Packaging
N-channel 2 V,.25 Ω typ., 2.3 A STripFET H5 Power MOSFET in a SOT-23 package Features Datasheet production data Order code V DS R DS(on) max I D P TOT 3 STR2N2VH5 2 V.3 Ω (V GS =4.5 V) 2.3 A.35 W 1 SOT-23
More informationFeatures. Description. AM01476v1. Table 1. Device summary. Order code Marking Package Packaging. STF10N80K5 10N80K5 TO-220FP Tube
N-channel 800 V, 0.470 Ω typ., 9 A MDmesh K5 Power MOSFET in a TO-220FP package Features Datasheet - production data Order code V DS R DS(on) max I D P TOT STF10N80K5 800 V 0.600 Ω 9 A 30 W TO-220FP Figure
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STH12N120K5-2, STP12N120K5, N-channel 1200 V, 0.62 Ω typ.,12 A MDmesh K5 Power MOSFETs in H²PAK-2, TO-220, TO-247 and TO-247 long leads Datasheet - production data Features Order codes V DS R DS(on) max.
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Dual P-channel 100 V, 0.136 Ω typ., 3.3 A STripFET VI DeepGATE Power MOSFET in a PowerFLAT 5x6 double island Features Datasheet - production data 1 Order code V DS R DS(on) max. I D 4 STL13DP10F6 100 V
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STF10N105K5, STP10N105K5, STW10N105K5 N-channel 1050 V, 1 Ω typ., 6 A MDmesh K5 Power MOSFETs in TO-220, TO-220FP and TO-247 packages Datasheet - production data TAB Features Order codes V DS R DS(on)
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N-channel 650 V, 0.037 Ω typ., 58 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D STW69N65M5-4 710 V 0.045 Ω 58 A Higher V DS
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N-channel 650 V, 0.056 Ω typ., 42 A, MDmesh V Power MOSFET in a TO247-4 package Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STW57N65M5-4 710 V 0.063 Ω 42 A Higher V DS
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STF13NM60N, STI13NM60N, STP13NM60N, STU13NM60N, STW13NM60N N-channel 600 V, 0.28 Ω typ., 11 A MDmesh II Power MOSFET in TO-220FP, I²PAK, TO-220, IPAK, TO-247 packages Datasheet production data Features
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N-channel 80 V, 5.6 mω, 18 A, PowerFLAT 5x6 STripFET VI DeepGATE Power MOSFET Features Order code V DSS R DS(on) max STL75N8LF6 80 V < 7.4 mω 18 A (1) 1. The value is rated according R thj-pcb I D R DS(on)
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STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh II Power MOSFET I 2 PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes V DSS (@T jmax )R DS(on) max I D STD11NM60ND
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Nchannel 55 V, 7.0 mω, 80 A DPAK STripFET III Power MOSFET Features Order code V DSS R DS(on) max. I D Pw 55 V < 8.5 mω 80 A 110 W Low threshold drive 100% avalanche tested Application Switching applications
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STSN3LH5 Nchannel 30 V, 0.019 Ω, A, SO8 STripFET V Power MOSFET Features Type V DSS R DS(on) max I D STSN3LH5 30 V 0.021 Ω A R DS(on) * Q g industry benchmark Extremely low onresistance R DS(on) Very low
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STP16N65M2, STU16N65M2 N-channel 650 V, 0.32 Ω typ., 11 A MDmesh M2 Power MOSFETs in TO-220 and IPAK packages Features Datasheet production data Order code V DS @ T Jmax R DS(on) max I D STP16N65M2 710
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STP20NM65N STF20NM65N N-channel 650 V, 0.250 Ω, 15 A TO-220, TO-220FP second generation MDmesh Power MOSFET Features Order codes V DSS @T jmax R DS(on) max. I D STP20NM65N STF20NM65N 710 V 0.270 Ω 15 A
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N-channel 600 V, 0.76 Ω typ., 4.8 A MDmesh II Plus low Q g Power MOSFET in a PowerFLAT 5x6 HV package Features Datasheet - production data Order code V DS @ T Jmax R DS(on) max I D 650 V 0.86 Ω 4.8 A 1
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STB18NM60N, STF18NM60N, STP18NM60N, STW18NM60N N-channel 600 V, 0.26 Ω typ., 13 A MDmesh II Power MOSFET in D 2 PAK, TO-220FP, TO-220 and TO-247 Features TAB Datasheet production data Order codes STB18NM60N
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STI260N6F6 STP260N6F6 N-channel 60 V, 0.0024 Ω, 120 A STripFET VI DeepGATE Power MOSFET in TO-220 and I²PAK packages Features Order codes V DSS R DS(on) max I D STI260N6F6 STP260N6F6 60 V < 0.003 Ω 120
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N-channel 650 V, 0.42 Ω typ., 8 A MDmesh M2 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on)max. I D 650 V 0.5 Ω 8 A DPAK (TO-252) Extremely low gate charge
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Nchannel 30 V, 0.0063 Ω, 17 A PowerFLAT (5x6) STripFET V Power MOSFET Features Type V DSS R DS(on) max 30 V
More informationSTB18NM80, STF18NM80, STP18NM80, STW18NM80
Features STB18NM80, STF18NM80, STP18NM80, STW18NM80 N-channel 800 V, 0.25 Ω, 17 A, MDmesh Power MOSFET in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet production data Order codes V DSS R DS(on)
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Nchannel 60 V, 0.07 Ω, 4 A SOT223 STripFET II Power MOSFET Features Order code V DSS R DS(on) max I D STN4NF06L 60 V < 0.1 Ω 4 A 2 Exceptional dv/dt capability Avalanche rugged technology 100% avalanche
More informationN-channel 100 V, Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package. Features. Description.
STL100N10F7 N-channel 100 V, 0.0062 Ω typ., 19 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet - production data Order code V DSS R DS(on) max I D P TOT 1 2 STL100N10F7
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STB4NK60Z, STB4NK60Z-1, STD4NK60Z, STD4NK60Z-1 N-channel 600 V, 1.7 Ω typ., 4 A Zener-protected SuperMESH Power MOSFETs in D²PAK, I²PAK, DPAK and IPAK packages Datasheet - production data TAB TAB Features
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Nchannel 60 V, 0.045 Ω, 4 A, SO8 STripFET Power MOSFET Features Type V DSS R DS(on) I D STS4DNF60L 60V
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STB120N4LF6 STD120N4LF6 Nchannel 40 V, 3.1 mω, 80 A DPAK, D²PAK STripFET VI DeepGATE Power MOSFET Features Order codes V DSS R DS(on) max I D STB120N4LF6 40 V 4.0 mω 80 A STD120N4LF6 40 V 4.0 mω 80 A Logic
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STB80NF10 STP80NF10 N-channel 100 V, 0.012 Ω, 80 A, TO-220, D 2 PAK low gate charge STripFET II Power MOSFET Features Type V DSS R DS(on) max I D STP80NF10 100 V < 0.015 Ω 80 A STB80NF10 100 V < 0.015
More informationFeatures. Description. Table 1. Device summary. Order code Marking Package Packing. STP110N7F6 110N7F6 TO-220 Tube
N-channel 68 V, 0.0055 Ω typ., 110 A, STripFET F6 Power MOSFET in a TO-220 package Features Datasheet - production data Order code V DS R DS(on)max. I D P TOT TAB STP110N7F6 68 V 0.0065 Ω 110 A 176 W TO-220
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Nchannel 100 V, 0.005 Ω typ., 21 A, STripFET VII DeepGATE Power MOSFET in a PowerFLAT 5x6 package Features Datasheet preliminary data Type V DSS R DS(on) max I D P TOT 100 V 0.006 Ω (V GS = 10 V) 21 A
More informationObsolete Product(s) - Obsolete Product(s)
Features N-channel 500 V, 0.23 Ω, 17 A SuperMESH Power MOSFET Zener-protected in D²PAK package Datasheet obsolete product Type V DSS R DS(on) max Extremely high dv/dt capability 100% avalanche tested Gate
More informationDual N-channel 30 V, Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET. Order code Marking Package Packaging
Dual Nchannel 30 V, 0.016 Ω, 11 A PowerFLAT (5x6) double island, STripFET V Power MOSFET Features Preliminary data Type V DSS R DSo(n) I D 30 V < 0.018 Ω 11 A (1) 1. The value is rated according R thjpcb
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Datasheet N-channel 600 V, 0.8 Ω typ., 5 A MDmesh II Power MOSFETs in DPAK, TO-220FP and IPAK packages Features Order code V DS R DS(on) max. I D Package STD7NM60N STF7NM60N 600 V 0.9 Ω 5 A DPAK TO-220FP
More informationObsolete Product(s) - Obsolete Product(s)
2N7000 2N7002 N-channel 60 V, 1.8 Ω, 0.35 A, SOT23-3L, TO-92 STripFET Power MOSFET Features Type V DSS R DS(on) max I D 2N7000 60 V < 5 Ω(@10V) 0.35 A 2N7002 60 V < 5 Ω(@10V) 0.20 A Low Q g Low threshold
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N-channel 30 V, 0.019 Ω typ., A, P-channel 30 V, 0.024 Ω typ.,8 A STripFET VI Power MOSFET in a PowerFLAT 5x6 d. i. package Features Datasheet - production data Order code Channel V DS R DS(on) max I D
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Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh II Power MOSFETs in D²PAK, TO-220FP and TO-220 packages TAB Features 3 1 2 D PAK TAB 1 2 3 TO-220FP Order code STB22NM60N V DS @ T jmax. R DS(on) max.
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N-channel 60 V, 0.015 Ω, 50 A STripFET II Power MOSFET in D²PAK, TO-220 and TO-220FP packages Datasheet production data Features Order code V DSS R DS(on) max. I D STB55NF06 STP55NF06 60 V < 0.018 Ω 50
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N-channel 60 V, 4.7 mω typ.,100 A STripFET F7 Power MOSFET in a D²PAK package Features Datasheet - production data Order code V DS R DS(on) max. I D P TOT STB100N6F7 60 V 5.6 mω 100A 125 W Among the lowest
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STD3NK80Z, STD3NK80Z-1 STF3NK80Z, STP3NK80Z N-channel 800 V, 3.8 Ω, 2.5 A, TO-220, TO-220FP, DPAK, IPAK Zener-protected SuperMESH Power MOSFET Features Type V DSS (@Tjmax) R DS(on) STP3NK80Z 800 V < 4.5
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N-channel 500 V, 0.23 Ω, 17 A, D 2 PAK Zener-protected supermesh Power MOSFET Features Type V DSS R DS(on) max I D Pw STB21NK50Z 500 V < 0.27 Ω 17 A 190 W Extremely high dv/dt capability 100% avalanche
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STR2N2VH5, STT5N2VH5 Nchannel 20 V, 0.025 Ω typ., 5 A STripFET V Power MOSFET in SOT23 and SOT236L packages Features Datasheet preliminary data Order codes V DS R DS(on) max I D P TOT 4 3 STR2N2VH5 0.03
More informationFeatures. Description. AM15572v1_tab. Table 1: Device summary Order code Marking Package Packing STD7LN80K5 7LN80K5 DPAK Tape and reel
N-channel 800 V, 0.95 Ω typ., 5 A MDmesh K5 Power MOSFET in a DPAK package Datasheet - production data Features Order code V DS R DS(on) max. I D STD7LN80K5 800 V 1.15 Ω 5 A DPAK Figure 1: Internal schematic
More informationN-channel 20 V, Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package. Order code Marking Package Packaging
N-channel 20 V, 0.002 Ω, 28 A STripFET V Power MOSFET in PowerFLAT 5x6 package Features Order code V DSS R DS(on) max I D 20 V < 0.003 Ω 28 A Improved die-to-footprint ratio Very low profile package Very
More informationOrder code V DS R DS(on ) max. I D
Datasheet N-channel 9 V,.21 Ω typ., 2 A MDmesh K5 Power MOSFET in a TO 22FP package Features TO-22FP D(2) 1 2 3 Order code V DS R DS(on ) max. I D STF2N9K5 9 V.25 Ω 2 A Industry s lowest R DS(on) x area
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N-channel 650 V, 0.37 Ω typ., 10 A MDmesh M2 Power MOSFET in a DPAK package Features Datasheet production data TAB 2 3 1 DPAK Figure 1. Internal schematic diagram, TAB Order code V DS R DS(on) max I D
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