IRFR1018EPbF IRFU1018EPbF
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1 PD A IRFR8EPbF IRFU8EPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized Capacitance and Avalanche SOA l Enhanced body diode dv/dt and di/dt Capability G D S V DSS HEXFET Power MOSFET R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 7.m: 8.4m: 79A c 56A D-Pak IRFR8EPbF I-Pak IRFU8EPbF G D S Gate Drain Source Absolute Maximum Ratings Symbol Parameter Max. Units I T C = 25 C Continuous Drain Current, V V (Silicon Limited) 79c I T C = C Continuous Drain Current, V V (Silicon Limited) 56c I T C = 25 C Continuous Drain Current, V V (Wire Bond Limited) 56 A I DM Pulsed Drain Current d 35 P C = 25 C Maximum Power Dissipation W Linear Derating Factor.76 W/ C V GS Gate-to-Source Voltage ± 2 V dv/dt Peak Diode Recovery f 2 V/ns T J Operating Junction and -55 to 75 C T STG Storage Temperature Range Soldering Temperature, for seconds (.6mm from case) 3 Avalanche Characteristics E AS (Thermally limited) Single Pulse Avalanche Energy e 88 mj I AR Avalanche Current d 47 A E AR Repetitive Avalanche Energy g mj Thermal Resistance Symbol Parameter Typ. Max. Units R θjc Junction-to-Case k.32 R θja Junction-to-Ambient (PCB Mount) jk 5 R θja Junction-to-Ambient k Notes through are on page 2 C/W 4/2/9
2 IRFR/U8EPbF (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 6 V V GS = V, I D = 25μA ΔV (BR)DSS /ΔT J Breakdown Voltage Temp. Coefficient.73 V/ C Reference to 25 C, I D = 5mAd R DS(on) Static Drain-to-Source On-Resistance mω V GS = V, I D = 47A g V GS(th) Gate Threshold Voltage V V DS = V GS, I D = μa I DSS Drain-to-Source Leakage Current 2 μa V DS = 6V, V GS = V 25 V DS = 48V, V GS = V, I GSS Gate-to-Source Forward Leakage na V GS = 2V Gate-to-Source Reverse Leakage - V GS = -2V (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units gfs Forward Transconductance S Q g Total Gate Charge nc Q gs Gate-to-Source Charge Q gd Gate-to-Drain ("Miller") Charge 2 Q sync Total Gate Charge Sync. (Q g - Q gd ) 34 R G(int) Internal Gate Resistance.73 Ω t d(on) Turn-On Delay Time 3 ns t r Rise Time 35 t d(off) Turn-Off Delay Time 55 t f Fall Time 46 C iss Input Capacitance 229 C oss Output Capacitance 27 C rss Reverse Transfer Capacitance 3 pf C oss eff. (ER) Effective Output Capacitance (Energy Related)h 39 C oss eff. (TR) Effective Output Capacitance (Time Related)g 63 Diode Characteristics Symbol Parameter Min. Typ. Max. Units I S Continuous Source Current 79c A Conditions V DS = 5V, I D = 47A I D = 47A V DS = 3V V GS = V g I D = 47A, V DS =V, V GS = V V DD = 39V I D = 47A R G = Ω V GS = V g V GS = V V DS = 5V ƒ =.MHz V GS = V, V DS = V to 6V i V GS = V, V DS = V to 6V h Conditions MOSFET symbol (Body Diode) showing the I SM Pulsed Source Current 35 integral reverse G (Body Diode)d p-n junction diode. S V SD Diode Forward Voltage.3 V, I S = 47A, V GS = V g t rr Reverse Recovery Time ns V R = 5V, 3 47 I F = 47A Q rr Reverse Recovery Charge nc di/dt = A/μs g I RRM Reverse Recovery Current.8 A t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LSLD) D Notes: Calculated continuous current based on maximum allowable junction Pulse width 4μs; duty cycle 2%. temperature. Bond wire current limit is 56A. Note that current C oss eff. (TR) is a fixed capacitance that gives the same charging time limitations arising from heating of the device leads may occur with as C oss while V DS is rising from to 8% V DSS. some lead mounting arrangements. C oss eff. (ER) is a fixed capacitance that gives the same energy as Repetitive rating; pulse width limited by max. junction C oss while V DS is rising from to 8% V DSS. temperature. ˆ When mounted on " square PCB (FR-4 or G- Material). For recom ƒ Limited by T Jmax, starting, L =.8mH mended footprint and soldering techniques refer to application note #AN-994. R G = 25Ω, I AS = 47A, V GS =V. Part not recommended for R θ is measured at T J approximately 9 C. use above this value. I SD 47A, di/dt 668A/μs, V DD V (BR)DSS, T J 75 C. 2
3 C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRFR/U8EPbF VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V VGS TOP 5V V 8.V 6.V 5.5V 5.V 4.8V BOTTOM 4.5V 4.5V 4.5V 6μs PULSE WIDTH Tj = 25 C. V DS, Drain-to-Source Voltage (V) 6μs PULSE WIDTH Tj = 75 C. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics 2.5 I D = 47A V GS = V T J = 75 C 2..5 V DS = 25V 6μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig 3. Typical Transfer Characteristics T J, Junction Temperature ( C) Fig 4. Normalized On-Resistance vs. Temperature 4 V GS = V, f = MHZ C iss = C gs C gd, C ds SHORTED 6 I D = 47A 3 C rss = C gd C oss = C ds C gd C iss 2 V DS = 48V V DS = 3V V DS = 2V 2 8 C oss 4 C rss V DS, Drain-to-Source Voltage (V) Q G Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage 3
4 Energy (μj) E AS, Single Pulse Avalanche Energy (mj) V (BR)DSS, I D, Drain Current (A) Drain-to-Source Breakdown Voltage (V) I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) IRFR/U8EPbF OPERATION IN THIS AREA LIMITED BY R DS (on) T J = 75 C V GS = V V SD, Source-to-Drain Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage msec LIMITED BY PACKAGE μsec msec Tc = 25 C Tj = 75 C Single Pulse DC.. V DS, Drain-toSource Voltage (V) Fig 8. Maximum Safe Operating Area 8 LIMITED BY PACKAGE 8 Id = 5mA T C, Case Temperature ( C) Fig 9. Maximum Drain Current vs. Case Temperature T J, Temperature ( C ) Fig. Drain-to-Source Breakdown Voltage I D TOP 5.3A A BOTTOM 47A V DS, Drain-to-Source Voltage (V) Starting T J, Junction Temperature ( C) Fig. Typical C OSS Stored Energy Fig 2. Maximum Avalanche Energy vs. DrainCurrent 4
5 E AR, Avalanche Energy (mj) Avalanche Current (A) Thermal Response ( Z thjc ) IRFR/U8EPbF D = SINGLE PULSE ( THERMAL RESPONSE ). E-6 E t, Rectangular Pulse Duration (sec) Notes:. Duty Factor D = t/t2 2. Peak Tj = P dm x Zthjc Tc Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case τj τj τ τ Ci= τi/ri Ci i/ri R R 2 R 3 R R 2 R 3 τ 2 τ 3 τ 2 τ 3 R4 R4 τ4 τ4 τc τ Ri ( C/W) τι (sec) Duty Cycle = Single Pulse..5. Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔTj = 5 C and Tstart =25 C (Single Pulse) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming ΔΤ j = 25 C and Tstart = 5 C E-6.E-5.E-4.E-3.E-2.E- TOP Single Pulse BOTTOM % Duty Cycle I D = 47A Starting T J, Junction Temperature ( C) Fig 5. Maximum Avalanche Energy vs. Temperature tav (sec) Fig 4. Typical Avalanche Current vs.pulsewidth Notes on Repetitive Avalanche Curves, Figures 4, 5: (For further info, see AN-5 at Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of T jmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long ast jmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 6a, 6b. 4. P D (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (.3 factor accounts for voltage increase during avalanche). 6. I av = Allowable avalanche current. 7. ΔT = Allowable rise in junction temperature, not to exceed T jmax (assumed as 25 C in Figure 4, 5). t av = Average time in avalanche. D = Duty cycle in avalanche = t av f Z thjc (D, t av ) = Transient thermal resistance, see Figures 3) P D (ave) = /2 (.3 BV I av ) = DT/ Z thjc I av = 2DT/ [.3 BV Z th ] E AS (AR) = P D (ave) t av 5
6 Q RR (A) I RR (A) Q RR (A) V GS (th) Gate threshold Voltage (V) I RR (A) IRFR/U8EPbF I D =.A I D =.ma I D = 25μA I D = μa 4 2 I F = 32A V R = 5V T J, Temperature ( C ) di F /dt (A/μs) Fig 6. Threshold Voltage vs. Temperature Fig. 7 - Typical Recovery Current vs. di f /dt I F = 47A V R = 5V I F = 32A V R = 5V di F /dt (A/μs) di F /dt (A/μs) Fig. 8 - Typical Recovery Current vs. di f /dt Fig. 9 - Typical Stored Charge vs. di f /dt I F = 47A V R = 5V di F /dt (A/μs) Fig. 2 - Typical Stored Charge vs. di f /dt 6
7 IRFR/U8EPbF - R G D.U.T * ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD ** - Reverse Recovery Current Re-Applied Voltage Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt Inductor Curent Body Diode Forward Drop D = P.W. Period *** V GS =V V DD Ripple 5% I SD * Use P-Channel Driver for P-Channel Measurements ** Reverse Polarity for P-Channel *** V GS = 5V for Logic Level Devices Fig 2. Diode Reverse Recovery Test Circuit for HEXFET Power MOSFETs 5V tp V (BR)DSS V DS L DRIVER R G 2V V GS tp D.U.T IAS.Ω - V DD A I AS Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms R G V GS V DS R D D.U.T. V DS 9% % V V GS Pulse Width µs Duty Factor. % - V DD t d(on) t r t d(off) t f Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms Id Vds 2K K DUT L VCC Vgs Vgs(th) Qgodr Qgd Qgs2 Qgs Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform 7
8 IRFR/U8EPbF D-Pak (TO-252AA) Package Outline Dimensions are shown in millimeters (inches) D-Pak (TO-252AA) Part Marking Information EXAMPLE: THIS IS AN IRFR2 WITH ASSEMBLY LOT CODE 234 ASSEMBLED ON WW 6, 2 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates "Lead-Free" "P" in assembly line position indicates "Lead-Free" qualification to the consumer-level INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFR2 6A 2 34 PART NUMBER DATE CODE YEAR = 2 WEEK 6 LINE A OR INTERNATIONAL RECTIFIER LOGO AS S E MB L Y LOT CODE IRFR PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) P = DESIGNATES LEAD-FREE PRODUCT QUALIFIED TO T HE CONSUMER LEVEL (OPTIONAL) YEAR = 2 WEEK 6 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at: 8
9 IRFR/U8EPbF I-Pak (TO-25AA) Package Outline Dimensions are shown in millimeters (inches) I-Pak (TO-25AA) Part Marking Information EXAMPLE: THIS IS AN IRFU2 WITH ASSEMBLY LOT CODE 5678 ASSEMBLED ON WW 9, 2 IN THE ASSEMBLY LINE "A" Note: "P" in assembly line position indicates Lead-Free" OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU2 9A PART NUMBER DATE CODE YEAR = 2 WEEK 9 LINE A INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRFU PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR = 2 WEEK 9 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at: 9
10 IRFR/U8EPbF D-Pak (TO-252AA) Tape & Reel Information Dimensions are shown in millimeters (inches) TR TRR TRL 6.3 (.64 ) 5.7 (.69 ) 6.3 (.64 ) 5.7 (.69 ) 2. (.476 ).9 (.469 ) FEED DIRECTION 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-48 & EIA INCH NOTES :. OUTLINE CONFORMS TO EIA mm Data and specifications subject to change without notice. This product has been designed for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 9245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.4/9
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Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
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Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationV DSS R DS(on) max I D
PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationIRLR8726PbF IRLU8726PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationOrdering Information Base part number Package Type Standard Pack Complete Part Form Quantity Number IRFB7437PbF TO-220 Tube 50 IRFB7437PbF
R DS (on), Drain-to -Source On Resistance (m ) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationG D S. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationV DSS. 40V 1.5mΩ 2.0mΩ 250Ac 195A. R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) HEXFET Power MOSFET
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationIRLR3110ZPbF IRLU3110ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Industrial
More informationIRLR3717 IRLU3717 HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use PD - 94718B
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 2.0
PD 97323 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationV DSS. 40V R DS(on) typ. 1.4mΩ max. 1.8mΩ 250Ac. I D (Silicon Limited) I D (Package Limited) 195A. HEXFET Power MOSFET.
R DS (on), Drain-to -Source On Resistance (mω) I D, Drain Current (A) Applications l Brushed Motor drive applications l BLDC Motor drive applications l Battery powered circuits l Half-bridge and full-bridge
More informationV DSS R DS(on) max Qg. 30V 4.8m: 15nC
PD - 9623 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationIRLR8721PbF IRLU8721PbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationTO-220AB. IRF3710ZPbF. 240 P C = 25 C Maximum Power Dissipation 160 Linear Derating Factor
PD - 95466A Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free
More informationIRFB4020PbF. Key Parameters V DS 200 V R DS(ON) 10V 80 m: Q g typ. 18 nc Q sw typ. 6.7 nc R G(int) typ. 3.2 Ω T J max 175 C
PD - 9795 DIGITAL AUDIO MOSFET Features Key parameters optimized for Class-D audio amplifier applications Low R DSON for improved efficiency Low Q G and Q SW for better THD and improved efficiency Low
More informationIRLR8729PbF IRLU8729PbF HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationApproved (Not Released) V DSS R DS(on) max Qg. 30V 3.5mΩ 36nC
Approved (Not Released) PD - TBD Applications l Optimized for UPS/Inverter Applications l Low Voltage Power Tools Benefits l Best in Class Performance for UPS/Inverter Applications l Very Low RDS(on) at
More informationIRFB3607PbF IRFS3607PbF IRFSL3607PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFP2907PbF. HEXFET Power MOSFET V DSS = 75V. R DS(on) = 4.5mΩ I D = 209A. Typical Applications. Benefits
Typical Applications l Telecom applications requiring soft start Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationV DSS R DS(on) max Qg (typ.) 30V GS = 10V 57nC
PD - 97407 Applications l Optimized for UPS/Inverter Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Power Tools HEXFET Power MOSFET
More informationBase part number Package Type Standard Pack Orderable Part Number. IRFP7530PbF TO-247 Tube 25 IRFP7530PbF I D, T J = 25 C 50
I D, Drain Current (A) StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications
More informationIRFP4410ZPbF HEXFET Power MOSFET
PD 9739A IRFP44ZPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationIRFR3704Z IRFU3704Z HEXFET Power MOSFET
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationBase Part Number Package Type Standard Pack Orderable Part Number. IRFP3006PbF TO-247 Tube 25 IRFP3006PbF
IRFP36PbF V DSS R DS(on) typ. max. I D (Silicon Limited) I D (Package Limited) 6V 2.m 2.5m 27A 95A G D S TO-247AC D S G Applications High Efficiency Synchronous Rectification in SMPS Uninterruptible Power
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationAUTOMOTIVE MOSFET TO-220AB IRF P C = 25 C Maximum Power Dissipation 330 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description Specifically designed for Automotive
More informationStandard Pack. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 6.7. V/ns Operating Junction and. mj I AR
IRFB347ZPbF Applications l Battery Management l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche and Dynamic dv/dt Ruggedness l Fully Characterized
More informationV DSS R DS(on) max (mw)
Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
More informationAUTOMOTIVE MOSFET. HEXFET Power MOSFET Wiper Control
AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationOrderable Part Number IRFP4768PbF TO-247AC Tube 25 IRFP4768PbF
Application High Efficiency Synchronous Rectification in SMPS Uninterruptible Power Supply High Speed Power Switching Hard Switched and High Frequency Circuits G D S HEXFET Power MOSFET V DSS R DS(on)
More informationIR MOSFET StrongIRFET IRF60R217
I D, Drain Current (A) IR MOSFET StrongIRFET Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationStrongIRFET IRL40B215
I D, Drain Current (A) StrongIRFET IRL4B25 Application Brushed Motor drive applications BLDC Motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier
More informationV DSS R DS(on) max Qg
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l Lead-Free
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