Lecture Plan 1. Contents Mode Queries Remarks. Verbal BB/PPT min min
|
|
|
- Brent Parker
- 6 years ago
- Views:
Transcription
1 Lecture Plan 1 Objective:-Review of PN junction Intruduction of P and N junction 1) What is p junction 2) Doping in p junction 3) What is N junction 4) Doping in Njunction 5) PN junction diode. Page 1
2 Lecture Plan 2 Objective:-Overviewof PN junction as an rectifier. Interoduction of rectifier 1)What is rectifier 2) Half wave rectifier 3)RMS and DC and Rippel factor of Half wave. Page 2
3 Objective:-Overview of Full Wave Rectifier. Lecture Plan 3 of Full Wave Rectifier 1)Types of full wave rectifier 2)Center tap Rectifier 3)Weinbridge Rectifier 4)RMS, DC value of voltage and current 5)Rippel Factor Page 3
4 Lecture Plan 4 Objective:-Overview of switching characterstics of PN junction diode and diode as a circuit element. Iteroduction about switching 1)Explain switching characterstics of diode 2) How diode can be used as element Page 4
5 Lecture Plan 5 Objective:-Overview of load line concept and clipping circuit. Interoduction of load line and clipping. 1)AC load line 2)DC load line 3)Serial Clipping 4)Parral clipping 5) Examples of clipping Page 5
6 Lecture Plan 6 Objective:-Overview of filter cicuits and clamping circuit. Interoduction of filter and clamping 1) Filter Interoduction and types of filter 2) Clamping circuit 3) Diode in series clamper 4) Diode in parrlal clamper Page 6
7 Lecture Plan 7 Objective:-Overview of peak to peak detector and voltage multipliers. Interoduction of peak detectors and voltage multipliers 1) Peak to peak detectors 2) Voltage multipliers 3) Different circuit of voltage doubler, trippler and quadruple circuits. Page 7
8 Lecture Plan 8 Objective:-Overview 0f BJT. Interoduction about BJT 1) Construction of BJT 2) Working of BJT 3) Application of BJT 4) VI Characterstics of BJT Page 8
9 Lecture Plan 9 Objective:-Overview of CB,CE and CC Construction. Interoduction of CB,CE and CC configuration 1) Circuit diagram of CB, CE and CC Configuration 2) VI Characterstics of every configuration 3) Current amlification factor 4) Relation between alpha and beeta Page 9
10 Lecture Plan 10 Objective:-Overview of BJT at DC and load line concept. Interoduction about what I will cover in this lecture 1) Circuit diagram of BJT at DC 2) AC load line 3) DC load line 4) Quesent poin concept 5) Numerical problems Page 10
11 Lecture Plan 11 Objective:-Overviewof BJT as an amplifier,switch and biasing of BJT. Interoduction about what I will cover in this lecture 1) Circiut diagram of BJT as an amplifier 2) Working and application of amplifier 3) How BJT work as switch 4) Interduction about biasing of BJT Page 11
12 Lecture Plan 12 Objective:-Overview of different types of biasingand smallsignal model and operation. Interoduction of the above topics 1) Ciruit diagram of fixed bias, emitter bias and voltage devider bias configuration? 2) Small signal model and calculation of different parameter? Page 12
13 Lecture Plan 13 Objective:-Overview of single stage BJT amplifier and internal capactances of BJT. Interoduction of amplifier and internal capacitance. 1) Circuit diagram of single stage amplifier and multistage amplifier. 2) Calculation of gain of these configuration. 3) Parasitic capacentances of amlifier Page 13
14 Lecture Plan 14 Objective:-Overview of high frequency model and frequency response of CE Configuration. Interoduction of high frequency response and high frequency model. 1) High frequency model and calculation of parameters. 2) Frequency response at low frequency. 3) Frequency response at high frequency. Page 14
15 Lecture Plan 15 Objective:-Overview of MOSFET. Interoduction about MOSFET. 1) Construction of MOSFET. 2) Working of MOSFET. 3) VI Characterstics of MOSFET 4) Application of MOSFET. Page 15
16 Lecture Plan 16 Objective:-Overview of Mosfet as an amplifier and switch. Interoduction about amplifier and switch. 1) Circuit diagram of amplifier. 2) Working of amplifier 3) Circuit diagram of MOSFET as switch and its working Page 16
17 Lecture Plan 17 Objective:-Overview of small signal model of MOSFET and biasing of MOSFET. Interoduction of small signal model and biasing. 1) Circuit diagram of small signalmodel 2) Calculation of different parameters 3) Interoduction About Biasing Page 17
18 Lecture Plan 18 Objective:-Overview of Different Biasing and numerical problems. Interoduction of different biasing. 1) Circuit diagram of fixed bias, emitter bias and voltage devider configuration and working of these. 2) Numerical problem on these configuration. Page 18
19 Lecture Plan 19 Objective:-Overview of single stage MOSFET amplifier and internal capactances. Interoduction of MOSFET as an amplifier. 1) Circuit diagram of MOSFET as an amplifier. 2) Working of the circuit. 3) Gain of the circuit. 4) Parasitic capacentances of MOSFET. Page 19
20 Lecture Plan 20 Objective:-Overview of High frequency model and frequency response of CS configuration. Interoduction of high frequency model and frquency response. 1) Circuit diagram of high frequency model 2) Working and parameter of above Model. 3) Frequency response of CS Configuration. Page 20
21 Lecture Plan 21 Objective:-Overview of OP-AMP and concept of inverting and non inverting amplifier. Interoduction of OP-AMP, inverting and noninverting congiguration. 1) Block Diagram of OP- AMP. 2) Circuit of inverting and noninverting configuratiom. 3) Working of above configuration 4) Application of these configuration. Page 21
22 Lecture Plan 22 Objective:-Overview of Differencial configuration and effect of finite open loop gain and bandwidth. Interoduction of above topics. 1) Circuit diagram of diffrential amplifier and its working. 2) Calculation of open loop gain annd its effect. 3) Calculation of bandwidth its effect Page 22
23 Lecture Plan 23 Objective:-Overview of large signal operation of OP-AMP. Interoduction of large signal operation. 1) Different operation of OP-AMP like adder, subtractor, integrator, differenciator etc. and explanation of that. 2) Circuit diagram and working of these? Page 23
24 Lecture Plan 24 Objective:-Overview of feedback and properties of negative feedback. of fedback and elobrate properties of feedback 1) Concept of feedback 2) Positive feedbak 3) Negative feedback 4) Comparison of positive and negative feedback 5) Advantage of negative feedback Page 24
25 Lecture Plan 25 Objective:-Overview of different types of feedback. of different types of feedback. 1) Block diagram of series shunt feedback. 2) Calculation of open loop gain and feedback gain. 3) Effect of gain on input resistance, output resistance and bandwidth etc. Page 25
26 Lecture Plan 26 Objective:-Overview of series-series feedback. of series series feedback. 1) Block diagram of series series feedback. 2) Calculation of open loop gain and feedback gain. 3) Effect of gain on input resistance, output resistance and bandwith. Page 26
27 Lecture Plan 27 Objective:-Overview of shunt-shunt and shunt- series feedback. Interoduction of shuntshunt and shunt-series feedback 1) Block diagram and circuit diagram of shunt-shunt and shuntseries feedback. 2) Working of these block diagram and circuit diagram. 3) Application of these confi guration. Page 27
28 Lecture Plan 28 Objective:-Overview of differential amplifier and MOS diffrential pair. of differential amplifier and MOS diffrential pair. 1) Block diagram and circuit diagram of differential amplifier and MOS diffrential pair. 2) Working of above circuits. 3) Numerical Problem. Page 28
29 Lecture Plan 29 Objective:-Overview of small signal operation of MOS differential pair. of small signal operation of MOS differential pair. 1) Block diagram and circuit diagram of small signal operation of MOS differential pair. 2) Working of above circuit. 3) Utility of these. Page 29
30 Lecture Plan 30 Objective:-Overview of BJT differential pair. of BJT differential pair. 1) Block diagram and circuit diagram of BJT Differntial pair. 2) Working of above circuit diagram. 3) Utility of this. Page 30
31 Lecture Plan 31 Objective:-Overview of non ideal characterstics of differential amplifier. of non-ideal characterstics. 1) Concept of non-ideal differentia amplifier. 2) How the graph will be plotted. 3) Analysis of graph. Page 31
32 Lecture Plan 32 Objective:-Overview of differential amplifier with active load. of active load. 1) Block diagram and circuit diagram of differential amplifier with active load. 2) Working of the above circuit. 3) Utility of this. Page 32
COURSE SCHEDULE SECTION. A (Room No: TP 301) B (Room No: TP 302) Hours Timings Hours Timings. Name of the staff Sec Office Office Hours Mail ID
SRM UNIVERSITY FACULTY OF ENGINEERING AND TECHNOLOGY SCHOOL OF ELECTRONICS AND COMMUNICATION ENGINEERING DEPARTMENT OF ECE COURSE PLAN Course Code : IT0201 Course Title : Electron Devices and Circuits
Microelectronic Circuits
SECOND EDITION ISHBWHBI \ ' -' Microelectronic Circuits Adel S. Sedra University of Toronto Kenneth С Smith University of Toronto HOLT, RINEHART AND WINSTON HOLT, RINEHART AND WINSTON, INC. New York Chicago
GOPALAN COLLEGE OF ENGINEERING AND MANAGEMENT Department of Electronics and Communication Engineering COURSE PLAN
Appendix - C GOPALAN COLLEGE OF ENGINEERING AND MANAGEMENT Department of Electronics and Communication Engineering Academic Year: 2016-17 Semester: EVEN COURSE PLAN Semester: VI Subject Code& Name: 10EC63
10. Output Stages and Power Supplies. 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1
10. Output Stages and Power Supplies 10. Output Stages and Power Supplies TLT-8016 Basic Analog Circuits 2005/2006 1 10.1 Thermal Considerations Considerable power is dissipated as heat in power devices.
ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source
ESE 372 / Spring 2011 / Lecture 19 Common Base Biased by current source Output from Collector Start with bias DC analysis make sure BJT is in FA, then calculate small signal parameters for AC analysis.
Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.
![Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.](/thumbs/96/128002629.jpg "Scheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.")
Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:
Roll No. B.Tech. SEM I (CS-11, 12; ME-11, 12, 13, & 14) MID SEMESTER EXAMINATION, ELECTRONICS ENGINEERING (EEC-101)
F:/Academic/22 Refer/WI/ACAD/10 SHRI RAMSWAROOP MEMORIAL COLLEGE OF ENGG. & MANAGEMENT (Following Paper-ID and Roll No. to be filled by the student in the Answer Book) PAPER ID: 3301 Roll No. B.Tech. SEM
UNIT I PN JUNCTION DEVICES
UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in
Downloaded from Downloaded from
IV SEMESTER FINAL EXAMINATION-2002 The figure in the margin indicates full marks. [i] (110111) 2 = (?) 16 [ii] (788) 10 = (?) 8 Q. [1] [a] Explain the types of extrinsic semiconductors with the help of
EE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
VALLIAMMAI ENGINEERING COLLEGE SRM NAGAR, KATTANKULATHUR- 603 203 DEPARTMENT OF ELECTRONICS AND COMMUNICATION ENGINEERING EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT I PN JUNCTION DEVICES 1. Define Semiconductor.
Carleton University. Faculty of Engineering and Design, Department of Electronics. ELEC 2507 Electronic - I Summer Term 2017
Carleton University Faculty of Engineering and Design, Department of Electronics Instructors: ELEC 2507 Electronic - I Summer Term 2017 Name Section Office Email Prof. Q. J. Zhang Section A 4148 ME qjz@doe.carleton.ca
Last time: BJT CE and CB amplifiers biased by current source
Last time: BJT CE and CB amplifiers biased by current source Assume FA regime, then VB VC V E I B I E, β 1 I Q C α I, V 0. 7V Calculate V CE and confirm it is > 0.2-0.3V, then BJT can be replaced with
ITT Technical Institute. ET215 Electronic Devices I Onsite Course SYLLABUS
ITT Technical Institute ET215 Electronic Devices I Onsite Course SYLLABS Credit hours: 4 Contact/Instructional hours: 50 (30 Theory Hours, 20 Lab Hours) Prerequisite(s) and/or Corequisite(s): Prerequisite:
Precision Rectifier Circuits
Precision Rectifier Circuits Rectifier circuits are used in the design of power supply circuits. In such applications, the voltage being rectified are usually much greater than the diode voltage drop,
BJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS
DHANALAKSHMI COLLEGE OF ENGINEERING DEPARTMENT OF ELECTRICAL AND ELECTRONICS ENGINEERING EC6202 ELECTRONIC DEVICES AND CIRCUITS UNIT-I - PN DIODEAND ITSAPPLICATIONS 1. What is depletion region in PN junction?
Federal Urdu University of Arts, Science & Technology Islamabad Pakistan THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB
THIRD SEMESTER ELECTRONICS - II BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Saqib Riaz Engr. M.Nasim Khan Dr.Noman Jafri Lecturer
Lesson Plan. Electronics 1-Total 51 Hours
Lesson Plan. Electronics 1-Total 5s Unit I: Electrical Engineering materials:(10) Crystal structure & defects; Ceramic materials-structures, composites, processing and uses; Insulating laminates for electronics,
UNIVERSITY OF NAIROBI COLLEGE OF BIOLOGICAL AND PHYSICAL SCIENCES FACULTY OF SCIENCE SPH 307 INTRODUCTORY ELECTRONICS
UNIVERSITY OF NAIROBI COLLEGE OF BIOLOGICAL AND PHYSICAL SCIENCES FACULTY OF SCIENCE SPH 307 INTRODUCTORY ELECTRONICS Dr. Kenneth A. Kaduki Department of Physics University of Nairobi Reviewer: Prof. Bernard
Unit/Standard Number. LEA Task # Alignment
1 Secondary Competency Task List 100 SAFETY 101 Demonstrate an understanding of State and School safety regulations. 102 Practice safety techniques for electronics work. 103 Demonstrate an understanding
CHAPTER 11. Feedback. Microelectronic Circuits, Seventh Edition. Copyright 2015 by Oxford University Press
CHAPTER 11 Feedback Figure 11.1 General structure of the feedback amplifier. This is a signal-flow diagram, and the quantities x represent either voltage or current signals. Figure 11.2 Determining the
SAMPLE FINAL EXAMINATION FALL TERM
ENGINEERING SCIENCES 154 ELECTRONIC DEVICES AND CIRCUITS SAMPLE FINAL EXAMINATION FALL TERM 2001-2002 NAME Some Possible Solutions a. Please answer all of the questions in the spaces provided. If you need
OBJECTIVE TYPE QUESTIONS
OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.
Microelectronic Circuits - Fifth Edition Sedra/Smith Copyright 2004 by Oxford University Press, Inc.
Feedback 1 Figure 8.1 General structure of the feedback amplifier. This is a signal-flow diagram, and the quantities x represent either voltage or current signals. 2 Figure E8.1 3 Figure 8.2 Illustrating
C H A P T E R 02. Operational Amplifiers
C H A P T E R 02 Operational Amplifiers The Op-amp Figure 2.1 Circuit symbol for the op amp. Figure 2.2 The op amp shown connected to dc power supplies. The Ideal Op-amp 1. Infinite input impedance 2.
Microelectronics Circuit Analysis and Design. Differential Amplifier Intro. Differential Amplifier Intro. 12/3/2013. In this chapter, we will:
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 11 Differential Amplifiers In this chapter, we will: Describe the characteristics and terminology of the ideal differential amplifier.
(a) BJT-OPERATING MODES & CONFIGURATIONS
(a) BJT-OPERATING MODES & CONFIGURATIONS 1. The leakage current I CBO flows in (a) The emitter, base and collector leads (b) The emitter and base leads. (c) The emitter and collector leads. (d) The base
Exam Model Answer. Question 1 (15 marks) Answer this question in the form of table. Choose the correct answer (only one answer is accepted).
Benha University Faculty of Engineering Shoubra Electrical Engineering Department First Year Communications. Answer all the following questions Illustrate your answers with sketches when necessary. The
UNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
visit website regularly for updates and announcements
ESE 372: Electronics Spring 2013 Web site: www.ece.sunysb.edu/~oe/leon.html visit website regularly for updates and announcements Prerequisite: ESE 271 Corequisites: ESE 211 Text Books: A.S. Sedra, K.C.
ELECTRONIC CIRCUITS. Time: Three Hours Maximum Marks: 100
EC 40 MODEL TEST PAPER - 1 ELECTRONIC CIRCUITS Time: Three Hours Maximum Marks: 100 Answer five questions, taking ANY TWO from Group A, any two from Group B and all from Group C. All parts of a question
Instructor: Aaron T. Ohta Office Hours: Mon 3:30 to 4:30 pm
EE 323 Microelectronic Circuits I Lecture: MWF 2:30 to 3:20 pm, POST 127 Labs: Section 1 Tue 9:00 to 11:50 am, Holmes 358 Section 2 Thur 9:00 to 11:50 am, Holmes 358 Section 3 Tue 1:30 to 4:20 pm, Holmes
1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier. (2 points)
Exam 1 Name: Score /60 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as. Estimate the 3-dB bandwidth of the amplifier.
ELT 215 Operational Amplifiers (LECTURE) Chapter 5
CHAPTER 5 Nonlinear Signal Processing Circuits INTRODUCTION ELT 215 Operational Amplifiers (LECTURE) In this chapter, we shall present several nonlinear circuits using op-amps, which include those situations
Index. Small-Signal Models, 14 saturation current, 3, 5 Transistor Cutoff Frequency, 18 transconductance, 16, 22 transit time, 10
Index A absolute value, 308 additional pole, 271 analog multiplier, 190 B BiCMOS,107 Bode plot, 266 base-emitter voltage, 16, 50 base-emitter voltages, 296 bias current, 111, 124, 133, 137, 166, 185 bipolar
PESIT BANGALORE SOUTH CAMPUS BASIC ELECTRONICS
PESIT BANGALORE SOUTH CAMPUS QUESTION BANK BASIC ELECTRONICS Sub Code: 17ELN15 / 17ELN25 IA Marks: 20 Hrs/ Week: 04 Exam Marks: 80 Total Hours: 50 Exam Hours: 03 Name of Faculty: Mr. Udoshi Basavaraj Module
PART-A UNIT I Introduction to DC & AC circuits
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR (AUTONOMOUS) Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code : Basic Electrical and Electronics Engineering (16EE207)
Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Department of Mechanical Engineering
MEMS1082 Chapter 3-2 Semiconductor devices Transistors and Amplifiers-BJT Bipolar Transistor Construction npn BJT Transistor Structure npn BJT I = I + E C I B V V BE CE = V = V B C V V E E Base-to-emitter
Lecture 33: Context. Prof. J. S. Smith
Lecture 33: Prof J. S. Smith Context We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources and cascode connected devices, and we will also look at
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road QUESTION BANK (DESCRIPTIVE) PART - A
SIDDHARTH GROUP OF INSTITUTIONS :: PUTTUR Siddharth Nagar, Narayanavanam Road 517583 QUESTION BANK (DESCRIPTIVE) Subject with Code: Basic Electrical and Electronics Engineering (16EE207) Year & Sem: II-B.
Operational Amplifier as A Black Box
Chapter 8 Operational Amplifier as A Black Box 8. General Considerations 8.2 Op-Amp-Based Circuits 8.3 Nonlinear Functions 8.4 Op-Amp Nonidealities 8.5 Design Examples Chapter Outline CH8 Operational Amplifier
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
Objective: To study and verify the functionality of a) PN junction diode in forward bias. Sl.No. Name Quantity Name Quantity 1 Diode
Experiment No: 1 Diode Characteristics Objective: To study and verify the functionality of a) PN junction diode in forward bias Components/ Equipments Required: b) Point-Contact diode in reverse bias Components
MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)
WINTER 16 EXAMINATION Model Answer Subject Code: 17213 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
Electronics I Circuit Drawings. Robert R. Krchnavek Rowan University Spring, 2018
Electronics I Circuit Drawings Robert R. Krchnavek Rowan University Spring, 2018 Ideal Diode Piecewise Linear Models of a Diode Piecewise Linear Models of a Diode 1 r d Piecewise Linear Models of a Diode
Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors
1 Chapter 7 Building Blocks of Integrated Circuit Amplifiers: Part D: Advanced Current Mirrors Current Mirror Example 2 Two Stage Op Amp (MOSFET) Current Mirror Example Three Stage 741 Opamp (BJT) 3 4
(Refer Slide Time: 01:33)
Solid State Devices Dr. S. Karmalkar Department of Electronics and Communication Engineering Indian Institute of Technology, Madras Lecture - 31 Bipolar Junction Transistor (Contd ) So, we have been discussing
Devices and Op-Amps p. 1 Introduction to Diodes p. 3 Introduction to Diodes p. 4 Inside the Diode p. 6 Three Diode Models p. 10 Computer Circuit
Contents p. v Preface p. ix Devices and Op-Amps p. 1 Introduction to Diodes p. 3 Introduction to Diodes p. 4 Inside the Diode p. 6 Three Diode Models p. 10 Computer Circuit Analysis p. 16 MultiSIM Lab
IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU
ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown
Operational Amplifiers
Basic Electronics Syllabus: Introduction to : Ideal OPAMP, Inverting and Non Inverting OPAMP circuits, OPAMP applications: voltage follower, addition, subtraction, integration, differentiation; Numerical
Solapur University, Solapur Syllabus for B.Sc. II Electronics Semester System To be implemented from Academic Year ) Course Structure: -
1 Solapur University, Solapur Syllabus for B.Sc. II Electronics Semester System To be implemented from Academic Year 2011-12 1) Course Structure: - Sr. Semester Paper Title Total No No. 1. Semester-III
Lecture 12. Bipolar Junction Transistor (BJT) BJT 1-1
Lecture 12 Bipolar Junction Transistor (BJT) BJT 1-1 Course Info Lecture hours: 4 Two Lectures weekly (Saturdays and Wednesdays) Location: K2 Time: 1:40 pm Tutorial hours: 2 One tutorial class every week
Carleton University. Faculty of Engineering, Department of Electronics ELEC 2507 / PLT 2006A - Electronic - I Winter Term 2016
Carleton University Faculty of Engineering, Department of Electronics ELEC 2507 / PLT 2006A - Electronic - I Winter Term 2016 Instructor: Name Sections Office/hours Email Prof. Ram Achar A&B 3036 MC Tue:
Revised April Unit/Standard Number. Proficiency Level Achieved: (X) Indicates Competency Achieved to Industry Proficiency Level
Unit/Standard Number Electrical, Electronic and Communications Engineering Technology/Technician CIP 15.0303 Task Grid Secondary Competency Task List 100 SAFETY 101 Demonstrate an understanding of state,
EE 330 Lecture 27. Bipolar Processes. Special Bipolar Processes. Comparison of MOS and Bipolar Proces JFET. Thyristors SCR TRIAC
EE 330 Lecture 27 Bipolar Processes Comparison of MOS and Bipolar Proces JFET Special Bipolar Processes Thyristors SCR TRIAC Review from a Previous Lecture B C E E C vertical npn B A-A Section B C E C
Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET
Dev Bhoomi Institute Of Technology Department of Electronics and Communication Engineering PRACTICAL INSTRUCTION SHEET LABORATORY MANUAL EXPERIMENT NO. ISSUE NO. : ISSUE DATE: REV. NO. : REV. DATE : PAGE:
Reading. Lecture 33: Context. Lecture Outline. Chapter 9, multi-stage amplifiers. Prof. J. S. Smith
eading Lecture 33: Chapter 9, multi-stage amplifiers Prof J. S. Smith Context Lecture Outline We are continuing to review some of the building blocks for multi-stage amplifiers, including current sources
Practical Manual. Deptt.of Electronics &Communication Engg. (ECE)
Practical Manual LAB: BASICS OF ELECTRONICS 1 ST SEM.(CSE/CV) Deptt.of Electronics &Communication Engg. (ECE) RAO PAHALD SINGH GROUP OF INSTITUTIONS BALANA(MOHINDER GARH)12302 Prepared By. Mr.SANDEEP KUMAR
EE301 Electronics I , Fall
EE301 Electronics I 2018-2019, Fall 1. Introduction to Microelectronics (1 Week/3 Hrs.) Introduction, Historical Background, Basic Consepts 2. Rewiev of Semiconductors (1 Week/3 Hrs.) Semiconductor materials
Code No: R Set No. 1
Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,
Homework Assignment 11
Homework Assignment 11 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
Question Paper Code: 21398
Reg. No. : Question Paper Code: 21398 B.E./B.Tech. DEGREE EXAMINATION, MAY/JUNE 2013 Fourth Semester Electrical and Electronics Engineering EE2254 LINEAR INTEGRATED CIRCUITS AND APPLICATIONS (Regulation
Linear electronic. Lecture No. 1
1 Lecture No. 1 2 3 4 5 Lecture No. 2 6 7 8 9 10 11 Lecture No. 3 12 13 14 Lecture No. 4 Example: find Frequency response analysis for the circuit shown in figure below. Where R S =4kR B1 =8kR B2 =4k R
Revised April Unit/Standard Number. High School Graduation Years 2016, 2017 and 2018
Unit/Standard Number High School Graduation Years 2016, 2017 and 2018 Electrical, Electronic and Communications Engineering Technology/Technician CIP 15.0303 Task Grid Secondary Competency Task List 100
DEPARTMENT OF ELECTRONICS
DEPARTMENT OF ELECTRONICS Academic Planner for odd Semesters Semester : I Subject : Electronics(ELT1). Course: B.Sc. (PME) Introduction to Number systems B Construction and types, working Review of P type
ELECTRONICS WITH DISCRETE COMPONENTS
ELECTRONICS WITH DISCRETE COMPONENTS Enrique J. Galvez Department of Physics and Astronomy Colgate University WILEY John Wiley & Sons, Inc. ^ CONTENTS Preface vii 1 The Basics 1 1.1 Foreword: Welcome to
Introduction to Simulation using EDWinXP
Introduction to Simulation using EDWinXP Introduction to Simulation using EDWinXP First Edition Copyright Notice ALL RIGHTS RESERVED. Any unauthorized reprint or use of this material is prohibited. No
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
Facility of Engineering. Biomedical Engineering Department. Medical Electronic Lab BME (317) Post-lab Forms
Facility of Engineering Biomedical Engineering Department Medical Electronic Lab BME (317) Post-lab Forms Prepared by Eng.Hala Amari Spring 2014 Facility of Engineering Biomedical Engineering Department
55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
PREFACE xvii PRACTICAL TRANSISTOR CIRCUIT THEORY 1.1 Iterated Circuits 1.2 Symbols 1.3 Feedback 1.4 The Miller Effect 1.5 Transistors 1.6 The transistor gain-impedance relation 1.7 Ohm's law and dc current-voltage
BJT Circuits (MCQs of Moderate Complexity)
BJT Circuits (MCQs of Moderate Complexity) 1. The current ib through base of a silicon npn transistor is 1+0.1 cos (1000πt) ma. At 300K, the rπ in the small signal model of the transistor is i b B C r
Chapter 1 Semiconductors and the p-n Junction Diode 1
Preface xiv Chapter 1 Semiconductors and the p-n Junction Diode 1 1-1 Semiconductors 2 1-2 Impure Semiconductors 5 1-3 Conduction Processes in Semiconductors 7 1-4 Thep-nJunction 9' 1-5 The Meta1-Semiconductor
Lecture 01 Operational Amplifiers Op-Amps Introduction
Lecture 01 Operational Amplifiers Op-Amps Introduction Chapter 9 Ideal Operational Amplifiers and Op-Amp Circuits Donald A. Neamen (2009). Microelectronics: Circuit Analysis and Design, 4th Edition, Mc-Graw-Hill
Transistor Digital Circuits
Recapitulation Transistor Digital Circuits The transistor Operating principle and regions Utilization of the transistor Transfer characteristics, symbols Controlled switch model BJT digital circuits MOSFET
S-[F] NPW-02 June All Syllabus B.Sc. [Electronics] Ist Year Semester-I & II.doc - 1 -
![S-[F] NPW-02 June All Syllabus B.Sc. [Electronics] Ist Year Semester-I & II.doc - 1 -](/thumbs/79/79759849.jpg "S-[F] NPW-02 June All Syllabus B.Sc. [Electronics] Ist Year Semester-I & II.doc - 1 -")
- 1 - - 2 - - 3 - DR. BABASAHEB AMBEDKAR MARATHWADA UNIVERSITY, AURANGABAD SYLLABUS of B.Sc. FIRST & SECOND SEMESTER [ELECTRONICS (OPTIONAL)] {Effective from June- 2013 onwards} - 4 - B.Sc. Electronics
Analog Electronics. Electronic Devices, 9th edition Thomas L. Floyd Pearson Education. Upper Saddle River, NJ, All rights reserved.
Analog Electronics BJT Structure The BJT has three regions called the emitter, base, and collector. Between the regions are junctions as indicated. The base is a thin lightly doped region compared to the
0. Introduction to Microelectronic Circuits
0. Introduction to Microelectronic Circuits S. S. Dan and S. R. Zinka Department of Electrical & Electronics Engineering BITS Pilani, Hyderbad Campus January 18, 2016 Outline 1 Introduction 2 Course Contents
Preface... iii. Chapter 1: Diodes and Circuits... 1
Table of Contents Preface... iii Chapter 1: Diodes and Circuits... 1 1.1 Introduction... 1 1.2 Structure of an Atom... 2 1.3 Classification of Solid Materials on the Basis of Conductivity... 2 1.4 Atomic
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS
ANALYSIS AND DESIGN OF ANALOG INTEGRATED CIRCUITS Fourth Edition PAUL R. GRAY University of California, Berkeley PAUL J. HURST University of California, Davis STEPHEN H. LEWIS University of California,
State the application of negative feedback and positive feedback (one in each case)
(ISO/IEC - 700-005 Certified) Subject Code: 073 Model wer Page No: / N Important Instructions to examiners: ) The answers should be examined by key words and not as word-to-word as given in the model answer
Electronics 1. Lecture 4
Electronics 1 Lecture 4 Bipolar Junction Transistors. Structure, Characteristics, Basic Circuit Configurations, Biasing Literature 1. Tony R. Kuphaldt: Lessons In Electric Circuits, Volume II AC, 2007
Code No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
FREQUENTLY ASKED QUESTIONS
FREQUENTLY ASKED QUESTIONS UNIT-1 SUBJECT : ELECTRONIC DEVICES AND CIRCUITS SUBJECT CODE : EC6202 BRANCH: EEE PART -A 1. What is meant by diffusion current in a semi conductor? (APR/MAY 2010, 2011, NOV/DEC
Electronic Devices and Circuits
Electronic Devices and Circuits I.J. Nagrath Electronic Devices and Circuits I.J. NAGRATH Adjunct Professor Former Deputy Director Birla Institute of Technology & Science Pilani New Delhi-110001 2012 ELECTRONIC
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline:
ECE 440 Lecture 29 : Introduction to the BJT-I Class Outline: Narrow-Base Diode BJT Fundamentals BJT Amplification Things you should know when you leave Key Questions How does the narrow-base diode multiply
EEE225: Analogue and Digital Electronics
EEE225: Analogue and Digital Electronics Lecture I James E. Green Department of Electronic Engineering University of Sheffield j.e.green@sheffield.ac.uk Introduction This Lecture 1 Introduction Aims &
Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No. # 04 Feedback in Amplifiers, Feedback Configurations and Multi Stage Amplifiers Lecture No. # 03 Input
ES 330 Electronics II Fall 2016
ES 330 Electronics II Fall 2016 Sect Lectures Location Instructor Office Office Hours Email Tel 001 001 9:00 am to 9:50 am Wednesday 10:00 am to 10 :50 am 2001 2001 Dr. Donald Estreich Dr. Donald Estreich
Georgia Institute of Technology School of Electrical and Computer Engineering. Midterm Exam
Georgia Institute of Technology School of Electrical and Computer Engineering Midterm Exam ECE-3400 Fall 2013 Tue, September 24, 2013 Duration: 80min First name Solutions Last name Solutions ID number
R & D Electronics DIGITAL IC TRAINER. Model : DE-150. Feature: Object: Specification:
DIGITAL IC TRAINER Model : DE-150 Object: To Study the Operation of Digital Logic ICs TTL and CMOS. To Study the All Gates, Flip-Flops, Counters etc. To Study the both the basic and advance digital electronics
EECE251 Circuit Analysis I Set 5: Operational Amplifiers
EECE251 Circuit Analysis I Set 5: Operational Amplifiers Shahriar Mirabbasi Department of Electrical and Computer Engineering University of British Columbia shahriar@ece.ubc.ca 1 Amplifiers There are various
SUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
Electronic Devices. Floyd. Chapter 6. Ninth Edition. Electronic Devices, 9th edition Thomas L. Floyd
Electronic Devices Ninth Edition Floyd Chapter 6 Agenda BJT AC Analysis Linear Amplifier AC Load Line Transistor AC Model Common Emitter Amplifier Common Collector Amplifier Common Base Amplifier Special
3 Circuit Theory. 3.2 Balanced Gain Stage (BGS) Input to the amplifier is balanced. The shield is isolated
Rev. D CE Series Power Amplifier Service Manual 3 Circuit Theory 3.0 Overview This section of the manual explains the general operation of the CE power amplifier. Topics covered include Front End Operation,
EE : ELECTRICAL ENGINEERING Module 8 : Analog and Digital Electronics INDEX
Pearl Centre, S.B. Marg, Dadar (W), Mumbai 400 028. Tel. 4232 4232 EE : ELECTRICAL ENGINEERING Module 8 : Analog and Digital Electronics Contents INDEX Sub Topics 1. Characteristics of Diodes, BJT & FET
GATE: Electronics MCQs (Practice Test 1 of 13)
GATE: Electronics MCQs (Practice Test 1 of 13) 1. Removing bypass capacitor across the emitter leg resistor in a CE amplifier causes a. increase in current gain b. decrease in current gain c. increase
SETH JAI PARKASH POLYTECHNIC, DAMLA
SETH JAI PARKASH POLYTECHNIC, DAMLA NAME OF FACULTY----------SANDEEP SHARMA DISCIPLINE---------------------- E.C.E (S.F) SEMESTER-------------------------2 ND SUBJECT----------------------------BASIC ELECTRONICS
Differential Amplifier Design
Differential Amplifier Design Design with ideal current source bias. Differential and common mode gain results Add finite output resistance to current source. Replace ideal current source with current