IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU
|
|
- Calvin Murphy
- 5 years ago
- Views:
Transcription
1 ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling. (D) high voltage breakdown. Q2. Space charge region around a p-n junction (A) does not contain mobile carriers (B) contains both free electrons and holes (C) contains one type of mobile carriers depending on the level of doping of the p or n regions (D) contains electrons only as free carriers Q3. The value of ripple factor of a half-wave rectifier without filter is approximately (A) 1.2 (B) 0.2 (C) 2.2 (D) 2.0 Q4. In an intrinsic semiconductor, the Fermi-level is (A) closer to the valence band (B) midway between conduction and valence band (C) closer to the conduction band (D) within the valence band Ans: C Q5. The reverse saturation current of a silicon diode (A) doubles for every 10 C increase in temperature (B) does not change with temperature (C) halves for every 1 C decrease in temperature (D) increases by 1.5 times for every 2 C increment in temperature Q6. In a full-wave rectifier without filter, the ripple factor is (A) (B) 1.21 (C) 1.79 (D) 2.05 Q7. The transformer utilization factor of a half-wave rectifier is approximately (A) 0.6 (B) 0.3 (C) 0.9 (D) 1.1 Page 1
2 Ans: B : Q8. If the output voltage of a bridge rectifier is 100V, the PIV of diode will be (A) 100 2V (B) 200/π V (C) 100πV (D) 100π/2 V Ans. (D) Peak inverse voltage = max secondary voltage V dc =2V m / π =100 V m =100 π /2 Q9. In the voltage regulator shown below, if the current through the load decreases, (A) The current through R1 will increase. (B) The current through R1 will decrease. (C) zener diode current will increase. (D) zener diode current will decrease. Ans. (C) Q10. n-type silicon is obtained by (A) Doping with tetravalent element (B) Doping with pentavalent element (C) Doping with trivalent element (D) Doping with a mixture of trivalent and tetravalent element Ans: (B) Q11. The forward characteristic of a diode has a slope of approximately 50mA/V at a desired point. The approximate incremental resistance of the diode is (A) 50Ω (B) 35Ω (C) 20Ω (D) 10Ω Ans: (B) Resistance at any point in the forward characteristics is given by R= ΔV/ ΔI = 1/50mA = 20Ω Q12. Rectification efficiency of a full wave rectifier without filter is nearly equal to (A) 51% (B) 61% (C) 71% (D) 81% Ans: (D) Q13. When the temperature of a doped semiconductor is increased, its conductivity (A) decreases. (B) increases. (C) does not change. (D) increases or decreases depending on whether it is p- or n-type. Ans: B Q14. A zener diode (A) Has a high forward voltage rating. (B) Has a sharp breakdown at low reverse voltage. (C) Is useful as an amplifier. Page 2
3 (D) Has a negative resistance. Ans: B Q15. If the peak value of the input voltage to a half wave rectifier is volts and no filter is use, the maximum dc voltage across the load will be (A) V2 20. (B) 15 V. (C) 9 V. (D) V. Ans: C Q16. The band gap of silicon at room temperature is A) 1.3 ev B) 0.7 ev C) 1.1 ev D) 1.4 Ev Ans C Q17. The primary reason for the widespread use of Silicon in semiconductor device technology is A) Abundance of silicon on the surface of the earth B) Larger bandgap of silicon in comparison to germanium C) Favorable properties of silicon-dioxide (SiO2) D) Lower melting Point Ans A Q18. Fill in the blanks (i) Diffusion impurities with 5 valence electrons are called.. (ii) In an n type material the electron is called the and the hole is.. (iii) In p-type semiconductor, Fermi Level lies close to... (iv) 14. Value of Volt equivalent of Temperature at-25 C is... (v) Cutin Voltages... with temperature (vi) The value of cut in voltage in the case of Germanium diode... and Silicon Diode... at room temperature. (vii) Zener breakdown mechanism needs relatively... electric field compared to Avalanche Breakdown. (viii) Expression for Volt equivalent of temperature V T in terms of temperature T is V T =.. (ix) Rectifier Converts... to..... (x) Depletion region width with reverse bias voltages Q19. Define following terms in respect of pn junction (i) Conductivity (ii) Doping (iii) Extrinsic Semiconductor (iv) Barrier potential (v) AC and DC resistance (vi) Depletion region (vii) Knee voltage Page 3
4 (viii) Reverse saturation current (ix) PIV (x) Ripple Factor (xi) Clippers (xii) Clampers Q20. Differentiate between the following a). Donor & Accepter impurity b). Intrinsic & extrinsic semiconductor c). Zener & Avalanche breakdown d). Clipping circuit & Clamping circuit Medium Questions Q1. Compare metals, semiconductors and insulators. Q2. Why semiconductors are used in electronics? Q3. Why doping is required in semiconductors? Q4. Define drift current and diffusion current. Q5. Discuss the effect of temperature on V/I characteristics Q6. What is dynamic resistance? Derive the relation for dynamic resistance of a pn junction diode. Q7. Calculate V 0 and I D for the circuit shown Q8. Draw output wave forms- (i) (ii) (iii) (iv) (v) (vi) Page 4
5 (vii) (viii) (x) (xi) (xii) (xiii) (xiii) (xv) Q9. Write notes on (i) Varactor Diode. (ii) LED (iii) Photo Diode (iv) Schottky Diode (v) Voltage multiplier Q10. A Ge diode carries a current of 1mA ar a room tmperature when a forward bias of 0.15 V is applied. Estimate the reverse saturation current at room temperature. Q11. Determine V o1 & V o2 for the network shown Page 5
6 Q12. Determine V o & I D for the network shown Q14. Two ideal and identical (ideality factor η=1) diodes are connected in series as shown in fig. Show that exp(ev 1 /KT)+exp(-eV 2 /KT)=2 where V 1 are the voltage drop across the diodes. Q15. Find operating point and r dc of diode at 20mA current with the help of given graph. Q16. Find the value of (i) D.C resistance and a.c resistance of a Germanium junction diode, if the temperature is 25 C and I o = 20µA with an applied voltage of 0.1 V Long Questions Q1. Explain I-V characteristics of pn junction diode, also show effect of temperature. Compare Si and Ge diodes Page 6
7 Q2 Explain the working of pn junction diode in open circuit, forward bias and reverse bias conditions. Q3. Draw and explain First, Second and third approximation of pn junction diode. Q4. Compare Half wave rectifier, CT Full wave rectifier and Bridge full wave rectifier. Q5. Explain the working of voltage tripler and quadrupler. Q6. What is doping of a semiconductor? Explain how p- and n-type semiconductors are formed. Also draw their energy band diagrams, clearly showing the different energy levels. Q7. Draw the load voltage waveform for a half wave and full wave rectifier with a capacitor filter (no explanation required). Q8. Draw the circuit diagram of a full wave rectifier using two diode (Center tapped Full wave rectifier) & Calculate a). I dc (average value of output current. (b). Irms ( rms value of output current (c). PIV rating of diode. Q9. Sketch the circuit of a bridge rectifier and describe its operation. Derive expressions for rectification efficiency and ripple factor of the circuit. If a capacitor is added to the circuit, show the output voltage waveform of the rectifier. Q10. A full wave rectifier is fed from a transformer having a centre tap secondary winding. The rms voltage from either end of secondary to centre tap is 30V. If the diode forward resistance is 2 ohm and that of the half secondary is 8 ohm, for a 1Kohm, calculate (i) Power delivered to load (ii) % Regulation (iii) Efficiency of rectification Page 7
Basic Electronics Important questions
Basic Electronics Important questions B.E-2/4 Mech- B Faculty: P.Lakshmi Prasanna Note: Read the questions in the following order i. Assignment questions ii. Class test iii. Expected questions iv. Tutorials
More information1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is
1) A silicon diode measures a low value of resistance with the meter leads in both positions. The trouble, if any, is A [ ]) the diode is open. B [ ]) the diode is shorted to ground. C [v]) the diode is
More informationR a) Draw and explain VI characteristics of Si & Ge diode. (8M) b) Explain the operation of SCR & its characteristics (8M)
SET - 1 1. a) Define i) transient capacitance ii) Diffusion capacitance (4M) b) Explain Fermi level in intrinsic and extrinsic semiconductor (4M) c) Derive the expression for ripple factor of Half wave
More informationDiodes and Applications
Diodes and Applications Diodes and Applications 2 1 Diode Operation 2 2 Voltage-Current (V-I) Characteristics 2 3 Diode Models 2 4 Half-Wave Rectifiers 2 5 Full-Wave Rectifiers 2 6 Power Supply Filters
More informationEnergy band diagrams Metals: 9. ELECTRONIC DEVICES GIST ρ= 10-2 to 10-8 Ω m Insulators: ρ> 10 8 Ω m Semiconductors ρ= 1 to 10 5 Ω m 109 A. Intrinsic semiconductors At T=0k it acts as insulator At room
More informationOBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112)
OBJECTIVE TYPE QUESTIONS FOR PRACTICAL EXAMINATION Subject : Electronics-I ( EC 112) 1. Which mathematical notation specifies the condition of periodicity for a continuous time signal? a. x(t) = x( t +T)
More informationElectronic Circuits I. Instructor: Dr. Alaa Mahmoud
Electronic Circuits I Instructor: Dr. Alaa Mahmoud alaa_y_emam@hotmail.com Chapter 27 Diode and diode application Outline: Semiconductor Materials The P-N Junction Diode Biasing P-N Junction Volt-Ampere
More information2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1
2 MARKS EE2203 ELECTRONIC DEVICES AND CIRCUITS UNIT 1 1. Define PN junction. When a p type semiconductor is joined to a N type semiconductor the contact surface is called PN junction. 2. What is an ideal
More informationPhysics 160 Lecture 5. R. Johnson April 13, 2015
Physics 160 Lecture 5 R. Johnson April 13, 2015 Half Wave Diode Rectifiers Full Wave April 13, 2015 Physics 160 2 Note that there is no ground connection on this side of the rectifier! Output Smoothing
More informationBASIC ELECTRONICS ENGINEERING
BASIC ELECTRONICS ENGINEERING Objective Questions UNIT 1: DIODES AND CIRCUITS 1 2 3 4 5 6 7 8 9 10 11 12 The process by which impurities are added to a pure semiconductor is A. Diffusing B. Drift C. Doping
More informationChapter 2. Diodes & Applications
Chapter 2 Diodes & Applications The Diode A diode is made from a small piece of semiconductor material, usually silicon, in which half is doped as a p region and half is doped as an n region with a pn
More informationDownloaded from
SOLID AND SEMICONDUCTOR DEVICES (EASY AND SCORING TOPIC) 1. Distinction of metals, semiconductor and insulator on the basis of Energy band of Solids. 2. Types of Semiconductor. 3. PN Junction formation
More information13. SEMICONDUCTOR DEVICES
Synopsis: 13. SEMICONDUCTOR DEVICES 1. Solids are classified into two categories. a) Crystalline solids b) Amorphous solids 2. Crystalline solids : Crystalline solids have orderly arrangement of atoms
More informationSummer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.
Summer 2015 Examination Subject Code: 17215 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.
More informationEC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS
EC6202- ELECTRONIC DEVICES AND CIRCUITS UNIT TEST-1 EXPECTED QUESTIONS 1. List the PN diode parameters. 1. Bulk Resistance. 2. Static Resistance/Junction Resistance (or) DC Forward Resistance 3. Dynamic
More informationSEMICONDUCTOR ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS. Class XII : PHYSICS WORKSHEET
SEMICONDUCT ELECTRONICS: MATERIALS, DEVICES AND SIMPLE CIRCUITS Class XII : PHYSICS WKSHEET 1. How is a n-p-n transistor represented symbolically? (1) 2. How does conductivity of a semiconductor change
More informationExamples to Power Supply
Examples to Power Supply Example-1: A center-tapped full-wave rectifier connected to a transformer whose each secondary coil has a r.m.s. voltage of 1 V. Assume the internal resistances of the diode and
More informationIntrinsic Semiconductor
Semiconductors Crystalline solid materials whose resistivities are values between those of conductors and insulators. Good electrical characteristics and feasible fabrication technology are some reasons
More informationMAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified) Subject Code: Model Answer Page No: 1/
MAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC 27001 2005 Certified) SUMMER 13 EXAMINATION Subject Code: 12025 Model Answer Page No: 1/ Important Instructions to examiners: 1) The
More informationGUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013
Seat No.: Enrolment No. GUJARAT TECHNOLOGICAL UNIVERSITY BE - SEMESTER III EXAMINATION SUMMER 2013 Subject Code: 131101 Date: 31-05-2013 Subject Name: Basic Electronics Time: 02.30 pm - 05.00 pm Total
More informationUNIT IX ELECTRONIC DEVICES
UNT X ELECTRONC DECES Weightage Marks : 07 Semiconductors Semiconductors diode-- characteristics in forward and reverse bias, diode as rectifier. - characteristics of LED, Photodiodes, solarcell and Zener
More informationElectronic Devices 1. Current flowing in each of the following circuits A and respectively are: (Circuit 1) (Circuit 2) 1) 1A, 2A 2) 2A, 1A 3) 4A, 2A 4) 2A, 4A 2. Among the following one statement is not
More informationSRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY)
SRM INSTITUTE OF SCIENCE AND TECHNOLOGY (DEEMED UNIVERSITY) QUESTION BANK I YEAR B.Tech (II Semester) ELECTRONIC DEVICES (COMMON FOR EC102, EE104, IC108, BM106) UNIT-I PART-A 1. What are intrinsic and
More informationObjective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3.
Objective Type Questions 1. Why pure semiconductors are insulators at 0 o K? 2. What is effect of temperature on barrier voltage? 3. What is difference between electron and hole? 4. Why electrons have
More informationPart I Lectures 1-7 Diode Circuit Applications
Part Lectures -7 iode Circuit Applications The PN Junction iode Electrical and Electronic Engineering epartment Lecture One - Page of 7 Second Year, Electronics, 9 - The PN Junction iode Basic Construction:
More informationEXPERIMENTS USING SEMICONDUCTOR DIODES
EXPERIMENT 9 EXPERIMENTS USING SEMICONDUCTOR DIODES Semiconductor Diodes Structure 91 Introduction Objectives 92 Basics of Semiconductors Revisited 93 A p-n Junction Operation of a p-n Junction A Forward
More informationTHERMIONIC AND GASEOUS STATE DIODES
THERMIONIC AND GASEOUS STATE DIODES Thermionic and gaseous state (vacuum tube) diodes Thermionic diodes are thermionic-valve devices (also known as vacuum tubes, tubes, or valves), which are arrangements
More information2) The larger the ripple voltage, the better the filter. 2) 3) Clamping circuits use capacitors and diodes to add a dc level to a waveform.
TRUE/FALSE. Write 'T' if the statement is true and 'F' if the statement is false. 1) A diode conducts current when forward-biased and blocks current when reverse-biased. 1) 2) The larger the ripple voltage,
More informationDownloaded from
Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers and trivalent atoms are the dopants. (b) Electrons are minority carriers and pentavalent
More informationElectronic Circuits. Diode Applications. Dr. Manar Mohaisen Office: F208 Department of EECE
Electronic Circuits Diode Applications Dr. Manar Mohaisen Office: F208 Email: manar.subhi@kut.ac.kr Department of EECE Review of the Precedent Lecture Doping It is a controlled addition of impurities to
More informationOBJECTIVE TYPE QUESTIONS
OBJECTIVE TYPE QUESTIONS Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling.
More informationAnalog Electronic Circuits
Analog Electronic Circuits Chapter 1: Semiconductor Diodes Objectives: To become familiar with the working principles of semiconductor diode To become familiar with the design and analysis of diode circuits
More informationFINALTERM EXAMINATION. Spring PHY301- Circuit Theory
Date 14/2/2013 Eini FINALTERM EXAMINATION Spring 2010 PHY301- Circuit Theory Time: 90 min Marks: 60 Question No: 1 If we connect 3 capacitors in parallel, the combined effect of all these capacitors will
More informationTerm Roadmap : Materials Types 1. INSULATORS
Term Roadmap : Introduction to Signal Processing Differentiating and Integrating Circuits (OpAmps) Clipping and Clamping Circuits(Diodes) Design of analog filters Sinusoidal Oscillators Multivibrators
More informationBasic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H. Chapter 2. Diodes and Applications
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 2 Diodes and Applications 1 Diodes A diode is a semiconductor device with a single
More informationLecture -1: p-n Junction Diode
Lecture -1: p-n Junction Diode Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor to
More informationTable of Contents. iii
Table of Contents Subject Page Experiment 1: Diode Characteristics... 1 Experiment 2: Rectifier Circuits... 7 Experiment 3: Clipping and Clamping Circuits 17 Experiment 4: The Zener Diode 25 Experiment
More informationEXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10
DIODE CHARACTERISTICS AND CIRCUITS EXPERIMENT 7: DIODE CHARACTERISTICS AND CIRCUITS 10/24/10 In this experiment we will measure the I vs V characteristics of Si, Ge, and Zener p-n junction diodes, and
More informationDiodes (non-linear devices)
C H A P T E R 4 Diodes (non-linear devices) Ideal Diode Figure 4.2 The two modes of operation of ideal diodes and the use of an external circuit to limit (a) the forward current and (b) the reverse voltage.
More informationChapter 14 Semiconductor Electronics Materials Devices And Simple Circuits
Class XII Chapter 14 Semiconductor Electronics Materials Devices And Simple Circuits Physics Question 14.1: In an n-type silicon, which of the following statement is true: (a) Electrons are majority carriers
More informationModule 04.(B1) Electronic Fundamentals
1.1a. Semiconductors - Diodes. Module 04.(B1) Electronic Fundamentals Question Number. 1. What gives the colour of an LED?. Option A. The active element. Option B. The plastic it is encased in. Option
More informationELECTRONIC DEVICES AND CIRCUITS
ELECTRONIC DEVICES AND CIRCUITS 1. As compared to a full wave rectifier using 2 diodes, the four diode bridge rectifier has the dominant advantage of (a) Higher current carrying (b) lower peak inverse
More informationWish you all Very Happy New Year
Wish you all Very Happy New Year Course: Basic Electronics (EC21101) Course Instructors: Prof. Goutam Saha (Sec. 2), Prof. Shailendra K. Varshney (Sec. 1), Prof. Sudip Nag (Sec. 3 ), Prof. Debashish Sen
More informationCh5 Diodes and Diodes Circuits
Circuits and Analog Electronics Ch5 Diodes and Diodes Circuits 5.1 The Physical Principles of Semiconductor 5.2 Diodes 5.3 Diode Circuits 5.4 Zener Diode References: Floyd-Ch2; Gao-Ch6; 5.1 The Physical
More informationScheme I Sample. : Second : Basic. Electronics : 70. Marks. Time: 3 Hrs. 2] b) State any. e) State any. Figure Definition.
Program Name Program Code Semester Course Title Scheme I Sample Question Paper : Diploma in Electronics Program Group : DE/EJ/IE/IS/ET/EN/EX : Second : Basic Electronics : 70 22216 Time: 3 Hrs. Instructions:
More informationDiscuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors
Discuss the basic structure of atoms Discuss properties of insulators, conductors, and semiconductors Discuss covalent bonding Describe the properties of both p and n type materials Discuss both forward
More information1 Diodes. 1.1 Diode Models Ideal Diode. ELEN 236 Diodes
ELEN 236 Diodes 1 Diodes 1.1 Diode Models 1.1.1 Ideal Diode Current through diode is zero for any voltage less than zero i.e. reverse biased case Current through diode is not limited by diode if voltage
More informationDiode Limiters or Clipper Circuits
Diode Limiters or Clipper Circuits Circuits which are used to clip off portions of signal voltages above or below certain levels are called limiters or clippers. Types of Clippers Positive Clipper Negative
More informationSUMMER 13 EXAMINATION Subject Code: Model Answer Page No: / N
Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2) The model answer and the answer written by candidate
More informationSEMICONDUCTOR EECTRONICS MATERIAS, DEVICES AND SIMPE CIRCUITS Important Points: 1. In semiconductors Valence band is almost filled and the conduction band is almost empty. The energy gap is very small
More informationChapter Semiconductor Electronics
Chapter Semiconductor Electronics Q1. p-n junction is said to be forward biased, when [1988] (a) the positive pole of the battery is joined to the p- semiconductor and negative pole to the n- semiconductor
More informationLesson 08. Name and affiliation of the author: Professor L B D R P Wijesundera Department of Physics, University of Kelaniya.
Lesson 08 Title of the Experiment: Identification of active components in electronic circuits and characteristics of a Diode, Zener diode and LED (Activity number of the GCE Advanced Level practical Guide
More informationElectron Devices and Circuits (EC 8353)
Electron Devices and Circuits (EC 8353) Prepared by Ms.S.KARKUZHALI, A.P/EEE Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. Diode Characteristics Conduction Region
More informationSharjah Indian School, Sharjah ELECTRONIC DEVICES - Class XII (Boys Wing) Page 01
ELECTRONIC DEVICES - Class XII (Boys Wing) Page 01 Electronics is the fast developing branch of Physics. Before the discovery of transistors in 1948, vacuum tubes (thermionic valves) were used as the building
More informationENG2210 Electronic Circuits. Chapter 3 Diodes
ENG2210 Electronic Circuits Mokhtar A. Aboelaze York University Chapter 3 Diodes Objectives Learn the characteristics of ideal diode and how to analyze and design circuits containing multiple diodes Learn
More informationUniversità degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica. Analogue Electronics. Paolo Colantonio A.A.
Università degli Studi di Roma Tor Vergata Dipartimento di Ingegneria Elettronica Analogue Electronics Paolo Colantonio A.A. 2015-16 Introduction: materials Conductors e.g. copper or aluminum have a cloud
More informationELECTRONIC DEVICES AND CIRCUITS
ELECTRONIC DEVICES AND CIRCUITS 1. At room temperature the current in an intrinsic semiconductor is due to A. holes B. electrons C. ions D. holes and electrons 2. Work function is the maximum energy required
More informationSemiconductor Devices Lecture 5, pn-junction Diode
Semiconductor Devices Lecture 5, pn-junction Diode Content Contact potential Space charge region, Electric Field, depletion depth Current-Voltage characteristic Depletion layer capacitance Diffusion capacitance
More informationCHAPTER 1 DIODE CIRCUITS. Semiconductor act differently to DC and AC currents
CHAPTER 1 DIODE CIRCUITS Resistance levels Semiconductor act differently to DC and AC currents There are three types of resistances 1. DC or static resistance The application of DC voltage to a circuit
More informationFederal Urdu University of Arts, Science & Technology Islamabad Pakistan SECOND SEMESTER ELECTRONICS - I
SECOND SEMESTER ELECTRONICS - I BASIC ELECTRICAL & ELECTRONICS LAB DEPARTMENT OF ELECTRICAL ENGINEERING Prepared By: Checked By: Approved By: Engr. Yousaf Hameed Engr. M.Nasim Khan Dr.Noman Jafri Lecturer
More informationSheet 2 Diodes. ECE335: Electronic Engineering Fall Ain Shams University Faculty of Engineering. Problem (1) Draw the
Ain Shams University Faculty of Engineering ECE335: Electronic Engineering Fall 2014 Sheet 2 Diodes Problem (1) Draw the i) Charge density distribution, ii) Electric field distribution iii) Potential distribution,
More informationWINTER 14 EXAMINATION. Model Answer. Subject Code: ) The answers should be examined by key words and not as word-to-word as given in the
Subject Code: 17215 WINTER 14 EXAMINATION Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationFET Channel. - simplified representation of three terminal device called a field effect transistor (FET)
FET Channel - simplified representation of three terminal device called a field effect transistor (FET) - overall horizontal shape - current levels off as voltage increases - two regions of operation 1.
More informationMicroelectronic Circuits Fourth Edition Adel S. Sedra, Kenneth C. Smith, 1998 Oxford University Press
Diodes ELZ 206 - Elektronik I Microelectronic Circuits Fourth Edition Adel S. Sedra, Kenneth C. Smith, 1998 Oxford University Press Department of Electrical and Electronics Engineering Dicle University
More informationIENGINEERS- CONSULTANTS LECTURE NOTES SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU. Lecture-4
2 P-n Lecture-4 20 Introduction: If a junction is formed between a p-type and a n-type semiconductor this combination is known as p-n junction diode and has the properties of a rectifier 21 Formation of
More informationDepartment of Electrical Engineering IIT Madras
Department of Electrical Engineering IIT Madras Sample Questions on Semiconductor Devices EE3 applicants who are interested to pursue their research in microelectronics devices area (fabrication and/or
More informationClass XII - Physics Semiconductor Electronics. Chapter-wise Problems
lass X - Physics Semiconductor Electronics Materials, Device and Simple ircuit hapter-wise Problems Multiple hoice Question :- 14.1 The conductivity of a semiconductor increases with increase in temperature
More informationSummer 2015 Examination. 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.
Summer 2015 Examination Subject Code: 17213 Model Answer Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme.
More informationElectronic devices-i. Difference between conductors, insulators and semiconductors
Electronic devices-i Semiconductor Devices is one of the important and easy units in class XII CBSE Physics syllabus. It is easy to understand and learn. Generally the questions asked are simple. The unit
More informationCode No: Y0221/R07 Set No. 1 I B.Tech Supplementary Examinations, Apr/May 2013 BASIC ELECTRONIC DEVICES AND CIRCUITS (Electrical & Electronics Engineering) Time: 3 hours Max Marks: 80 Answer any FIVE Questions
More informationChapter 1: Semiconductor Diodes
Chapter 1: Semiconductor Diodes Diodes The diode is a 2-terminal device. A diode ideally conducts in only one direction. 2 Diode Characteristics Conduction Region Non-Conduction Region The voltage across
More informationSection:A Very short answer question
Section:A Very short answer question 1.What is the order of energy gap in a conductor, semi conductor, and insulator?. Conductor - no energy gap Semi Conductor - It is of the order of 1 ev. Insulator -
More informationSYLLABUS OSMANIA UNIVERSITY (HYDERABAD)
UNIT - 1 i SYLLABUS OSMANIA UNIVERSITY (HYDERABAD) JUNCTION DIODE Different Types of PN Junction Formation Techniques, PN Junction Characteristics, Biasing, Band Diagrams and Current Flow, Diode Current
More information55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More informationsemiconductor p-n junction Potential difference across the depletion region is called the built-in potential barrier, or built-in voltage:
Chapter four The Equilibrium pn Junction The Electric field will create a force that will stop the diffusion of carriers reaches thermal equilibrium condition Potential difference across the depletion
More informationجامعة اإلسكندرية كلية الهندسة قسم الهندسة الكهربية أبريل ٢٠١٥
Alexandria University Faculty of Engineering Electrical Engineering Department April 2015 1a EE 132 Electronic Devices and Circuits First Year Time allowed: 1½ hours جامعة اإلسكندرية كلية الهندسة قسم الهندسة
More informationDiode Bridges. Book page
Diode Bridges Book page 450-454 Rectification The process of converting an ac supply into dc is called rectification The device that carries this out is called a rectifier Half wave rectifier only half
More informationChapter 5: Diodes. I. Theory. Chapter 5: Diodes
Chapter 5: Diodes This week we will explore another new passive circuit element, the diode. We will also explore some diode applications including conversion of an AC signal into a signal that never changes
More informationPN Junction Diode Table of Contents. What Are Diodes Made Out Of?
PN Junction iode Table of Contents What are diodes made out of?slide 3 N-type materialslide 4 P-type materialslide 5 The pn junctionslides 6-7 The biased pn junctionslides 8-9 Properties of diodesslides
More informationPage 1. Date 15/02/2013
Page 1 Date 15/02/2013 Final Term Examination Fall 2012 Phy301-Circuit Theory 1. State kirchhoff s current law (KCL) Marks: 2: Answer: (PAGE 42) KIRCHHOF S CURRENT LAW Sum of all the currents entering
More informationElectro - Principles I
The PN Junction Diode Introduction to the PN Junction Diode Note: In this chapter we consider conventional current flow. Page 11-1 The schematic symbol for the pn junction diode the shown in Figure 1.
More informationLec (03) Diodes and Applications
Lec (03) Diodes and Applications Diode Models 1 Diodes and Applications Diode Operation V-I Characteristics of a Diode Diode Models Half-Wave and Full-Wave Rectifiers Power Supply Filters and Regulators
More informationDiode conducts when V anode > V cathode. Positive current flow. Diodes (and transistors) are non-linear device: V IR!
Diodes: What do we use diodes for? Lecture 5: Diodes and Transistors protect circuits by limiting the voltage (clipping and clamping) turn AC into DC (voltage rectifier) voltage multipliers (e.g. double
More informationFigure 2.1: Energy Band gap Block Diagram
Figure 2.1: Energy Band gap Block Diagram Figure 2.2: Log Is Vs 10 3 /T Figure 2.3: Schematic Representation of a p-n Junction Diode Department of Physical Sciences, Bannari Amman Institute of Technology,
More informationUNIT I PN JUNCTION DEVICES
UNIT I PN JUNCTION DEVICES 1. Define Semiconductor. 2. Classify Semiconductors. 3. Define Hole Current. 4. Define Knee voltage of a Diode. 5. What is Peak Inverse Voltage? 6. Define Depletion Region in
More informationCONTENTS. 2.2 Schrodinger's Wave Equation 31. PART I Semiconductor Material Properties. 2.3 Applications of Schrodinger's Wave Equation 34
CONTENTS Preface x Prologue Semiconductors and the Integrated Circuit xvii PART I Semiconductor Material Properties CHAPTER 1 The Crystal Structure of Solids 1 1.0 Preview 1 1.1 Semiconductor Materials
More informationReg. No. : Question Paper Code : B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER Second Semester
WK 5 Reg. No. : Question Paper Code : 27184 B.E./B.Tech. DEGREE EXAMINATION, NOVEMBER/DECEMBER 2015. Time : Three hours Second Semester Electronics and Communication Engineering EC 6201 ELECTRONIC DEVICES
More informationVALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur
VALLIAMMAI ENGINEERING COLLEGE SRM Nagar, Kattankulathur 603 203. DEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING SUBJECT QUESTION BANK : EC6201 ELECTRONIC DEVICES SEM / YEAR: II / I year B.E.ECE
More informationCENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING
CENTURION UNIVERSITY OF TECHNOLOGY AND MANAGEMENT SCHOOL OF ENGINEERING & TECHNOLOGYDEPARTMENT OF ELECTRONICS & COMMUNICATION ENGINEERING ELECTRONIC DEVICES Section: ECE SEM: II PART-A 1. a) In a N-type
More informationSemiconductor Devices
Semiconductor Devices Modelling and Technology Source Electrons Gate Holes Drain Insulator Nandita DasGupta Amitava DasGupta SEMICONDUCTOR DEVICES Modelling and Technology NANDITA DASGUPTA Professor Department
More informationPhysics 281 EXPERIMENT 7 I-V Curves of Non linear Device
Physics 281 EXPERIMENT 7 I-V Curves of Non linear Device Print this page to start your lab report (1 copy) Bring a diskette to save your data. OBJECT: To study the method of obtaining the characteristics
More informationSETH JAI PARKASH POLYTECHNIC, DAMLA
SETH JAI PARKASH POLYTECHNIC, DAMLA NAME OF FACULTY----------SANDEEP SHARMA DISCIPLINE---------------------- E.C.E (S.F) SEMESTER-------------------------2 ND SUBJECT----------------------------BASIC ELECTRONICS
More informationShankersinh Vaghela Bapu Institute of Technology
Shankersinh Vaghela Bapu Institute of Technology B.E. Semester III (EC) 131101: Basic Electronics INDEX Sr. No. Title Page Date Sign Grade 1 [A] To Study the V-I characteristic of PN junction diode. [B]
More information55:041 Electronic Circuits
55:041 Electronic Circuits Chapter 1 & 2 A. Kruger Diode Review, Page-1 Semiconductors licon () atoms have 4 electrons in valence band and form strong covalent bonds with surrounding atoms. Section 1.1.2
More information3.4. Reverse Breakdown Region Zener Diodes In the breakdown region Very steep i-v curve Almost constant voltage drop Used for voltage regulator
3.4. Reverse Breakdown Region Zener Diodes In the breakdown region Very steep i-v curve Almost constant voltage drop Used for voltage regulator Voltage regulator Provide a constant dc output voltage If
More informationEDC Lecture Notes UNIT-1
P-N Junction Diode EDC Lecture Notes Diode: A pure silicon crystal or germanium crystal is known as an intrinsic semiconductor. There are not enough free electrons and holes in an intrinsic semi-conductor
More informationMAHARASHTRA STATE BOARD OF TECHNICAL EDUCATION (Autonomous) (ISO/IEC Certified)
WINTER 16 EXAMINATION Model Answer Subject Code: 17215 Important Instructions to examiners: 1) The answers should be examined by key words and not as word-to-word as given in the model answer scheme. 2)
More informationExperiments in Analog Electronics
Ministry of Higher Education and Scientific Research University of Technology Department of Electrical Engineering Analog Electronics Laboratory Experiments in Analog Electronics By Firas Mohammed Ali
More informationCode No: R Set No. 1
Code No: R05010204 Set No. 1 I B.Tech Supplimentary Examinations, Aug/Sep 2007 ELECTRONIC DEVICES AND CIRCUITS ( Common to Electrical & Electronic Engineering, Electronics & Communication Engineering,
More informationBasic Electronics SYLLABUS BASIC ELECTRONICS. Subject Code : 15ELN15/25 IA Marks : 20. Hrs/Week : 04 Exam Hrs. : 03. Total Hrs. : 50 Exam Marks : 80
SYLLABUS BASIC ELECTRONICS Subject Code : /25 IA Marks : 20 Hrs/Week : 04 Exam Hrs. : 03 Total Hrs. : 50 Exam Marks : 80 Course objectives: The course objective is to make students of all the branches
More information