IENGINEERS- CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU

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1 ELECTRONICS ENGINEERING Unit 1 Objectives Q.1 The breakdown mechanism in a lightly doped p-n junction under reverse biased condition is called. (A) avalanche breakdown. (B) zener breakdown. (C) breakdown by tunnelling. (D) high voltage breakdown. Q2. Space charge region around a p-n junction (A) does not contain mobile carriers (B) contains both free electrons and holes (C) contains one type of mobile carriers depending on the level of doping of the p or n regions (D) contains electrons only as free carriers Q3. The value of ripple factor of a half-wave rectifier without filter is approximately (A) 1.2 (B) 0.2 (C) 2.2 (D) 2.0 Q4. In an intrinsic semiconductor, the Fermi-level is (A) closer to the valence band (B) midway between conduction and valence band (C) closer to the conduction band (D) within the valence band Ans: C Q5. The reverse saturation current of a silicon diode (A) doubles for every 10 C increase in temperature (B) does not change with temperature (C) halves for every 1 C decrease in temperature (D) increases by 1.5 times for every 2 C increment in temperature Q6. In a full-wave rectifier without filter, the ripple factor is (A) (B) 1.21 (C) 1.79 (D) 2.05 Q7. The transformer utilization factor of a half-wave rectifier is approximately (A) 0.6 (B) 0.3 (C) 0.9 (D) 1.1 Page 1

2 Ans: B : Q8. If the output voltage of a bridge rectifier is 100V, the PIV of diode will be (A) 100 2V (B) 200/π V (C) 100πV (D) 100π/2 V Ans. (D) Peak inverse voltage = max secondary voltage V dc =2V m / π =100 V m =100 π /2 Q9. In the voltage regulator shown below, if the current through the load decreases, (A) The current through R1 will increase. (B) The current through R1 will decrease. (C) zener diode current will increase. (D) zener diode current will decrease. Ans. (C) Q10. n-type silicon is obtained by (A) Doping with tetravalent element (B) Doping with pentavalent element (C) Doping with trivalent element (D) Doping with a mixture of trivalent and tetravalent element Ans: (B) Q11. The forward characteristic of a diode has a slope of approximately 50mA/V at a desired point. The approximate incremental resistance of the diode is (A) 50Ω (B) 35Ω (C) 20Ω (D) 10Ω Ans: (B) Resistance at any point in the forward characteristics is given by R= ΔV/ ΔI = 1/50mA = 20Ω Q12. Rectification efficiency of a full wave rectifier without filter is nearly equal to (A) 51% (B) 61% (C) 71% (D) 81% Ans: (D) Q13. When the temperature of a doped semiconductor is increased, its conductivity (A) decreases. (B) increases. (C) does not change. (D) increases or decreases depending on whether it is p- or n-type. Ans: B Q14. A zener diode (A) Has a high forward voltage rating. (B) Has a sharp breakdown at low reverse voltage. (C) Is useful as an amplifier. Page 2

3 (D) Has a negative resistance. Ans: B Q15. If the peak value of the input voltage to a half wave rectifier is volts and no filter is use, the maximum dc voltage across the load will be (A) V2 20. (B) 15 V. (C) 9 V. (D) V. Ans: C Q16. The band gap of silicon at room temperature is A) 1.3 ev B) 0.7 ev C) 1.1 ev D) 1.4 Ev Ans C Q17. The primary reason for the widespread use of Silicon in semiconductor device technology is A) Abundance of silicon on the surface of the earth B) Larger bandgap of silicon in comparison to germanium C) Favorable properties of silicon-dioxide (SiO2) D) Lower melting Point Ans A Q18. Fill in the blanks (i) Diffusion impurities with 5 valence electrons are called.. (ii) In an n type material the electron is called the and the hole is.. (iii) In p-type semiconductor, Fermi Level lies close to... (iv) 14. Value of Volt equivalent of Temperature at-25 C is... (v) Cutin Voltages... with temperature (vi) The value of cut in voltage in the case of Germanium diode... and Silicon Diode... at room temperature. (vii) Zener breakdown mechanism needs relatively... electric field compared to Avalanche Breakdown. (viii) Expression for Volt equivalent of temperature V T in terms of temperature T is V T =.. (ix) Rectifier Converts... to..... (x) Depletion region width with reverse bias voltages Q19. Define following terms in respect of pn junction (i) Conductivity (ii) Doping (iii) Extrinsic Semiconductor (iv) Barrier potential (v) AC and DC resistance (vi) Depletion region (vii) Knee voltage Page 3

4 (viii) Reverse saturation current (ix) PIV (x) Ripple Factor (xi) Clippers (xii) Clampers Q20. Differentiate between the following a). Donor & Accepter impurity b). Intrinsic & extrinsic semiconductor c). Zener & Avalanche breakdown d). Clipping circuit & Clamping circuit Medium Questions Q1. Compare metals, semiconductors and insulators. Q2. Why semiconductors are used in electronics? Q3. Why doping is required in semiconductors? Q4. Define drift current and diffusion current. Q5. Discuss the effect of temperature on V/I characteristics Q6. What is dynamic resistance? Derive the relation for dynamic resistance of a pn junction diode. Q7. Calculate V 0 and I D for the circuit shown Q8. Draw output wave forms- (i) (ii) (iii) (iv) (v) (vi) Page 4

5 (vii) (viii) (x) (xi) (xii) (xiii) (xiii) (xv) Q9. Write notes on (i) Varactor Diode. (ii) LED (iii) Photo Diode (iv) Schottky Diode (v) Voltage multiplier Q10. A Ge diode carries a current of 1mA ar a room tmperature when a forward bias of 0.15 V is applied. Estimate the reverse saturation current at room temperature. Q11. Determine V o1 & V o2 for the network shown Page 5

6 Q12. Determine V o & I D for the network shown Q14. Two ideal and identical (ideality factor η=1) diodes are connected in series as shown in fig. Show that exp(ev 1 /KT)+exp(-eV 2 /KT)=2 where V 1 are the voltage drop across the diodes. Q15. Find operating point and r dc of diode at 20mA current with the help of given graph. Q16. Find the value of (i) D.C resistance and a.c resistance of a Germanium junction diode, if the temperature is 25 C and I o = 20µA with an applied voltage of 0.1 V Long Questions Q1. Explain I-V characteristics of pn junction diode, also show effect of temperature. Compare Si and Ge diodes Page 6

7 Q2 Explain the working of pn junction diode in open circuit, forward bias and reverse bias conditions. Q3. Draw and explain First, Second and third approximation of pn junction diode. Q4. Compare Half wave rectifier, CT Full wave rectifier and Bridge full wave rectifier. Q5. Explain the working of voltage tripler and quadrupler. Q6. What is doping of a semiconductor? Explain how p- and n-type semiconductors are formed. Also draw their energy band diagrams, clearly showing the different energy levels. Q7. Draw the load voltage waveform for a half wave and full wave rectifier with a capacitor filter (no explanation required). Q8. Draw the circuit diagram of a full wave rectifier using two diode (Center tapped Full wave rectifier) & Calculate a). I dc (average value of output current. (b). Irms ( rms value of output current (c). PIV rating of diode. Q9. Sketch the circuit of a bridge rectifier and describe its operation. Derive expressions for rectification efficiency and ripple factor of the circuit. If a capacitor is added to the circuit, show the output voltage waveform of the rectifier. Q10. A full wave rectifier is fed from a transformer having a centre tap secondary winding. The rms voltage from either end of secondary to centre tap is 30V. If the diode forward resistance is 2 ohm and that of the half secondary is 8 ohm, for a 1Kohm, calculate (i) Power delivered to load (ii) % Regulation (iii) Efficiency of rectification Page 7

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