Design of a micro-ring resonator electro-optical modulator embedded in a reverse biased PN junction
|
|
- Leon Daniels
- 6 years ago
- Views:
Transcription
1 Eindovn, T Ntrlands, Jun 11-13, 2008 TD4 Dsign of a micro-ring rsonator lctro-optical modulator mbddd in a rvrs biasd PN junction A. Brimont 1 F.Y. Gards 2, P. Sancis 1, D. Marris-Morini 3, P. Dumon 4, J.M. Fdli 5, L. O'Faolain 6, W. Bogart 4, L. Vivin 3, J. Martí 1, G.T. Rd 2, T.F. Krauss 6 1 Nanopotonics Tcnology Cntr - Univrsidad Politécnica d Valncia (Spain) abrimont@ntc.upv.s 2 Advancd Tcnology Institut, Univrsity of Surry (UK) F.Gards@surry.ac.uk 3 Institut d Elctroniqu Fondamntal, CNRS, Univrsité Paris Sud (Franc) 4 Gnt Univrsity IMEC (Blgium) 5 CEA-Lti (Franc) 6 Scool of Pysics & Astronomy, Univrsity of St Andrws (UK) Abstract. In tis papr, t dsign of a micro-ring rsonator lctro-optical modulator using a PN junction mbddd in a rib wavguid is rportd. A rvrs bias of 10V is applid to t junction and sows t possibility to aciv a ig modulation dpt. T figur of mrit of tis compact dpltion modulator is stimatd to b Lp.Vp=3.46 V.cm for a loss varying from about 5 db/cm to 8.6 db/cm dpnding on t voltag applid. 1. Introduction Silicon potonics aims at scaling down dramatically t dimnsions of optical componnts so lctronic and optical functionalitis could b intgratd monolitically into an all-silicon cip at vry low cost. Most of rsarc activitis in t fild of silicon av bn so far focusd on passiv structurs, ligt mitting dvics, dtctors and modulators. Significant progrss as bn mad, pusing pysical limits of silicon byond initial xpctations. In t fild of ligt modulation in Silicon, t callnging aspct is to altr t rfractiv indx as silicon dos not xibit any linar lctro-optic (Pockls) ffct, usually usd in III-V smiconductors. Altrnativ ways to altr t rfractiv indx in all-silicon structurs av bn proposd. So far, t last xprimntal vidncs sown tat t only viabl mcanism to aciv multi-gz modulation in all-silicon dvics is provn to b t plasma disprsion ffct. Tis pysical ffct is basically basd on fr carrir concntration variation in a smiconductor, wic altrs bot t ral and imaginary part of t rfractiv indx, rspctivly known as lctrorfraction and lctroabsorbtion. Ts paramtrs wr drivd xprimntally by R.A.Sorf [1] from t Drud-Lornz quations at t spcific tlcommunication wavlngts (1.3 m and 1.55 m). His conclusions ld to t following mpirical quations: At = 1.55 m: = + = [ α = α + α = ( ) 0. 8 ] 321
2 TD4 ECIO 08 Eindovn Wr n is t cang in rfractiv indx rsulting from cang in fr lctron concntration; n is t cang in rfractiv indx rsulting from cang in fr ol concntration; is t cang in absorption rsulting from cang in fr lctron concntration; is t cang in absorption rsulting from cang in fr ol concntration Combining ts quations wit a mod solvr it bcoms possibl to work out t ffctiv indx cang of a mod and trfor t rsulting pas sift for a givn voltag. Exprimntal dmonstrations of ig spd modulation in fr carrirs dpltd silicon-basd structurs was dmonstratd tortically by [2,3] and xprimntally by [4-7] to work in t multi-ghz rgim. Howvr, t nd for compactnss, t ky for VLSI intgration motivatd rsarcrs to mov toward rsonating structurs among otr altrnativs. T us of a ring rsonator to modulat an optical signal was alrady sown by [8] to rac bit rats as ig as 12.5 Gbit/s undr a pr-mpasizd voltag driving scm. In tis papr, w propos also t us of a ring rsonator modulator, in wic modulation is acivd sifting t rsonanc paks by mans of carrir dpltion witin a PN junction. 2. Dvic dscription T proposd ring rsonator modulator (Fig. 1) is basd on a 300nm wid, 150nm tc dpt and 200 nm ig rib wavguid, wic nabls to aciv singl mod transmission. P-typ 300nm 75nm/225nm P-typ N-typ 150nm 50nm P-typ Box Fig1. Scmatic of t proposd ring rsonator modulator sowing t positioning of t junction insid t ring modulator Fig2 : Elctrical structur of t modulator As sown on Fig.2, t PN junction is asymmtrical in siz and in doping concntration in ordr to maximiz t ols dpltion ara ovrlappd by t optical mod. T n- typ rgion is 75 nm wid and t p typ 225 nm wid, t nt doping concntration of tis particular junction is varying btwn 6E17/cm3 and 2E17/cm3, for n and p typ rspctivly. T rsistiv contacts ar formd by igly dopd rgions (1E20/cm3) in ordr to form a good rsistiv contact and ar placd 1µm away from t junction to minimis intraction wit t optical mod and tus absorption losss. T position of t contacting lctrods is a ky aspct in t cas of a rvrs biasd PN basdmodulator bcaus t RC constant cut off frquncy, wic rsults from capacitiv ffcts witin t junction, limits t modulation spd. T modulator prformanc was simulatd using Atna for t procss dvlopmnt and ion implantations and Atlas for DC and transint analysis, bot part of t 322
3 Eindovn, T Ntrlands, Jun 11-13, 2008 TD4 smiconductor CAD softwar Silvaco. Optical Caractristics for t optical loss, fficincy and transint analysis wr calculatd using an in ous mod solvr. Fig. 3 rprsnts t variation of t ffctiv indx for diffrnt rvrs voltags; t loss of t activ ara is also displayd, and varis from 8.6dB/cm wn no bias is applid, to about 5 db/cm wit a rvrs bias of 10 volts. T fficincy of tis spcific modulator is Lp.Vp=3.46 V.cm. maning tat a lngt of 3.46 mm would b ncssary to obtain a -pas sift wit a 10 volt rvrs bias in a Mac Zndr intrfromtr. Fig3. Simulatd ffctiv indx cang and loss of du to t carrir for diffrnt rvrs voltag bias As t activ part of t modulator is insrtd in t ring rsonator, t rspons of t ring modulator is calculatd by combining t rsults in figur 3 in t quation blow ([9], [10]) 2 2 2π K + t 2K t cos NL 2 λ b = π 1+ K t 2K t cos NL λ Wr N is t total ffctiv indx including disprsion or group indx, K is loss factor of t ring (K=1 is losslss), L is total pysical lngt of t ring (nm), t is transfr or coupling cofficint of t couplr, is t wavlngt. Fig4. Simulatd ring rspons for diffrnt radius 10, 30 and 50 µm and rvrs bias voltag varying btwn 0 and 10 volts. T rsults ar displayd in Fig4 for tr diffrnt ring radii. Tos rsults ar drivd from an idal coupling factor matcd to t loss factor of t ring in ordr to obtain t bst rspons, also only t loss inducd by t fr carrirs insid t wavguid is takn into account. T intrsting rsult r is to sow tat for a similar PN junction 323
4 TD4 ECIO 08 Eindovn dsign, a similar xtinction ratio can b acivd rgardlss of t ring siz. Tis is du to t fact tat as t ring dcrass in siz, t fr spctral rang (FSR) incrass nc a small cang in rfractiv indx insid t wavguid will induc a biggr sift in wavlngt compard to largr rings wr t FSR is smallr. Nvrtlss, it is important to not tat dcrasing t bnd radius incrass t intrinsic losss insid t ring du to t wavguid wall rougnss, nc incrasing t loss factor and t xtinction ratio of t ring. Conclusion Tis papr sown t tortical possibilitis of modulating fficintly an optical signal propagating troug a ring rsonator and using a PN junction mbddd in rib wavguid. Du to t intrinsic possibilitis offrd by a PN junction, ig spd modulation can tn b acivd by sifting t ring rsonanc pak undr a rvrs biasd voltag, cancling t nd of using complicatd pr-mpasizd voltag driving scms. Furtrmor suc a dvic would b bnficial and a major improvmnt in trms of powr rquirmnts as wll as ral stat of t dvic compard to dpltion modulators insrtd in MZI. Acknowldgmnts Autors acknowldg financial support by EC undr NoE PIXnt. Rfrncs [1] R A. Sorf, B.R. Bntt, Elctrooptical ffcts in Silicon IEEE J. Quantum Elctron. QE-23, pp , [2] F. Y. Gards, G. T. Rd, N. G. Emrson, and C. E. Png, "A sub-micron dpltion-typ potonic modulator in silicon on insulator," Optics Exprss, vol. 13, pp , [3] D. Marris, E. Cassan, L.Vivin, Rspons tim analysis of SiG/Si modulation-dopd multiplquantum-wll structurs for optical modulation, Journal of applid pysics, Vol 96, nº11, pp , [4] A. Lupu, D. Marris, D. Pascal, J-L. Crcus, A. Cordat, V. L Tan, S. Laval, Exprimntal vidnc for indx modulation by carrir dpltion in SiG/si multipl quantum wll structurs, Applid pysics lttrs, Vol 85, nº 6, pp , 2004 [5] D. Marris-Morini, X. L Roux, L. Vivin, E. Cassan, D. Pascal, M. Halbwax, S. Main, S. Laval, J. M Fdli, and J. F. Damlncourt, "Optical modulation by carrir dpltion in a silicon PIN diod," Optics Exprss, vol. 14, pp , [6] L. Ansng, L. Ling, D. Rubin, N. Hay, B. Ciftcioglu, Y. Ctrit, N. Izaky, and M. Paniccia, "Higspd optical modulation basd on carrir dpltion in a silicon wavguid," Optics Exprss, vol.15, pp , [7] D. Marris-Morini, L.Vivin, J.M. Fédéli, E. Cassan, P. Lyan, S. Laval, Low loss and ig spd silicon optical modulator basd on a latral carrir dpltion structur, Optics xprss, vol.16, pp , [8] Q. Xu, S.Manipatruni, J. Sakya, M. Lipson, 12,5 Gbit/s carrir-injction-basd silicon micro ring ring silicon modulators, Optics xprss, vol. 15, pp , [9] J. M. Coi, R. K. L, and A. Yariv, "Control of critical coupling in a ring rsonator-fibr application to wavlngt-slctiv switcing, modulation, amplification, and oscillation," Optics Lttrs, vol. 26, pp , [10] A. Yariv, "Critical coupling and its control in optical wavguid-ring rsonator systms," IEEE Potonics Tcnology Lttrs, vol. 14, pp ,
5
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode
High-speed modulation of a compact silicon ring resonator based on a reverse-biased pn diode F.Y. Gardes 1 *, A. Brimont 2, P. Sanchis 2, G. Rasigade 3, D. Marris-Morini 3, L. O'Faolain 4, F. Dong 4, J.M.
More information90 and 180 Phase Shifter Using an Arbitrary Phase-Difference Coupled-line Structure
This articl has bn accptd and publishd on J-STAGE in advanc of copyditing. Contnt is final as prsntd. IEICE Elctronics Exprss, Vol.* No.*,*-* 90 and 80 Phas Shiftr Using an Arbitrary Phas-Diffrnc Coupld-lin
More informationTheory and Proposed Method for Determining Large Signal Return Loss or Hot S22 for Power Amplifiers Using Phase Information
Thory and Proposd Mthod for Dtrmining arg Signal Rturn oss or Hot S for Powr Amplifirs Using Phas Information Patrick Narain and Chandra Mohan (Skyworks Solutions, Inc.) Introduction: Powr amplifirs (s)
More informationOnline Publication Date: 15 th Jun, 2012 Publisher: Asian Economic and Social Society. Computer Simulation to Generate Gaussian Pulses for UWB Systems
Onlin Publication Dat: 15 th Jun, 01 Publishr: Asian Economic and Social Socity Computr Simulation to Gnrat Gaussian Pulss for UWB Systms Ibrahim A. Murdas (Elctrical Dpartmnt, Univrsity of Babylon, Hilla,Iraq)
More informationRClamp2451ZA. Ultra Small RailClamp 1-Line, 24V ESD Protection
- RailClamp Dscription RailClamp TVS diods ar ultra low capacitanc dvics dsignd to protct snsitiv lctronics from damag or latch-up du to ESD, EFT, and EOS. Thy ar dsignd for us on high spd ports in applications
More informationLab 12. Speed Control of a D.C. motor. Controller Design
Lab. Spd Control of a D.C. motor Controllr Dsign Motor Spd Control Projct. Gnrat PWM wavform. Amplify th wavform to driv th motor 3. Masur motor spd 4. Masur motor paramtrs 5. Control spd with a PD controllr
More informationAME. Shunt Bandgap Voltage Reference. General Description. Functional Block Diagram. Features. Typical Application. Applications
Gnral Dscription Th is a micropowr 2-trminal band-gap voltag rgulator diod. It oprats ovr a 30µA to 20mA currnt rang. Each circuit is trimmd at wafr sort to provid a ±0.50% and ±0.80% initial tolranc.
More informationCH 7. Synchronization Techniques for OFDM Systems
CH 7. Synchronization Tchnius for OFDM Systms 1 Contnts [1] Introduction Snsitivity to Phas Nois Snsitivity to Fruncy Offst Snsitivity to Timing Error Synchronization Using th Cyclic Extnsion l Tim synchronization
More informationLow Cross-Polarization Slab Waveguide Filter for Narrow-Wall Slotted Waveguide Array Antenna with High Gain Horn
Intrnational Confrnc on Mchatronics Enginring and Information Tchnology (ICMEIT 2016) Low Cross-Polarization Slab Wavguid Filtr for Narrow-Wall Slottd Wavguid Array Antnna with High Gain Horn Guoan Xionga,
More information3G Evolution. OFDM Transmission. Outline. Chapter: Subcarriers in Time Domain. Outline
Chaptr: 3G Evolution 4 OFDM Transmission Dpartmnt of Elctrical and Information Tchnology Johan Löfgrn 2009-03-19 3G Evolution - HSPA and LTE for Mobil Broadband 1 2009-03-19 3G Evolution - HSPA and LTE
More informationIONOSPHERIC ABSORPTION OF HF RADIO WAVE IN VERTICAL PROPAGATION *
Iranian Journal of Scinc & Tchnology, Transaction A, Vol. 3, No. A4 Printd in Th Islamic Rpublic of Iran, 7 Shira Univrsity IONOSPHERIC ABSORPTION OF HF RADIO WAVE IN VERTICAL PROPAGATION * I. UNAL **,
More informationLinearization of Two-way Doherty Amplifier by Using Second and Fourth Order Nonlinear Signals
3 Linarization of Two-way Dohrty Amplifir by Using Scond and Fourth Ordr Nonlinar Signals Alksandar Atanasković and Nataša Malš-Ilić Abstract In this papr, a two-way Dohrty amplifir with th additional
More informationSurface-normal electro-optic-polymer modulator with silicon subwavelength grating
This articl has bn accptd and publishd on J-STAGE in advanc of copditing. Contnt is final as prsntd. IEICE Elctronics Eprss, Vol.* No.*,*-* Surfac-normal lctro-optic-polmr modulator with silicon subwavlngth
More informationPackage: H: TO-252 P: TO-220 S: TO-263. Output Voltage : Blank = Adj 12 = 1.2V 15 = 1.5V 18 = 1.8V 25 = 2.5V 33 = 3.3V 50 = 5.0V 3.3V/3A.
Faturs Advancd Powr 3-Trminal ustabl or Fixd.V,.5V,.8V,.5V, 3.3V or 5.V Output Maximum Dropout.4V at Full Load Currnt Fast Transint Rspons Built-in Thrmal Shutdown Output Currnt Limiting Good Nois Rjction
More informationPerformance Analysis of BLDC Motor for Sinusoidal and Trapezoidal Back-Emf using MATLAB/SIMULINK Environment
Prformanc Analysis of BLDC Motor for Sinusoidal and Trapzoidal Back-Emf using MATLAB/SIMULINK Environmnt Pramod Pal Dpartmnt of Elctrical Enginring Maulana AzadNational Institut of Tchnology Bhopal, India
More informationEfficiency Optimized Brushless DC Motor Drive based on Input Current Harmonic Elimination
Intrnational Journal of Powr Elctronics and Driv Systm (IJPEDS) Vol. 6, No. 4, Dcmbr 2015, pp. 869~875 ISSN: 2088-8694 869 Efficincy Optimizd Brushlss DC Motor Driv basd on Input Currnt Harmonic Elimination
More informationN-Channel Depletion-Mode Vertical DMOS FET in Single and Dual Options. 14-Lead QFN* 5.00x5.00mm body 1.00mm height (max) 1.
Suprtx inc. Faturs Vry low gat thrshold voltag Dsignd to b sourc-drivn Low switching losss Low ffctiv output capacitanc Dsignd for inductiv loads Wll matchd for low scond harmonic whn drivn by Suprtx M30
More informationData Sheet. HSMS-2700, 2702, 270B, 270C High Performance Schottky Diode for Transient Suppression. Features. Description.
HSMS-2700, 2702, 270B, 270 High Prformanc Schottky iod for Transint Supprssion ata Sht scription Th HSMS-2700 sris of Schottky diods, commonly rfrrd to as clipping /clamping diods, ar optimal for circuit
More informationTransient Voltage Suppressors / ESD Protectors
Transint Voltag Supprssors / ES Protctors PACN04/4/44/45/46 Faturs Two, thr, four, fiv, or six transint voltag supprssors Compact SMT packag savs board spac and facilitats layout in spac-critical applications
More informationDETERMINATION OF ELECTRONIC DISTANCE MEASUREMENT ZERO ERROR USING KALMAN FILTER
Europan Scintific Journal Sptmbr 24 dition vol., No.27 ISSN: 87 788 (rint) - ISSN 87-743 DETERMINATION OF ELECTRONIC DISTANCE MEASUREMENT ZERO ERROR USING KALMAN FILTER Onuwa Owuashi, hd Dpartmnt of Goinformatics
More informationESX10-10x-DC24V-16A-E electronic circuit protector
Dscription Th plug-in typ ESX10 lctronic circuit protctor slctivly disconncts DC 2 V load circuits by rsponding fastr than th switch mod powr supply to ovrload conditions. Th manual ON/ OFF switch on th
More informationANALYSIS ON THE COVERAGE CHARACTERISTICS OF GLONASS CONSTELLATION
ANALYSIS ON THE COVERAGE CHARACTERISTICS OF GLONASS CONSTELLATION Itm Typ txt; rocdings Authors Hui, Liu; Qishan, Zhang ublishr Intrnational Foundation for Tlmtring Journal Intrnational Tlmtring Confrnc
More informationSPX mA Low Drop Out Voltage Regulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Very Low Quiescent Current Low Dropout Voltage
400mA Low Drop Out Voltag Rgulator with Shutdown FEATURES Output 3.3V, 5.0V, at 400mA Output Vry Low Quiscnt Currnt Low Dropout Voltag Extrmly Tight Load and Lin Rgulation Vry Low Tmpratur Cofficint Currnt
More informationConducted EMI of Switching Frequency Modulated Boost Converter
doi: 1.7/cc-13-9 13 / 3 Conductd of Switching Frquncy Modulatd Boost Convrtr Dniss Stpins (Rsarchr, Riga Tchnical Univrsity) Abstract In this papr conductd lctromagntic intrfrnc () of boost convrtr with
More information3A High Current, Low Dropout Voltage Regulator Adjustable, Fast Response Time
SPX29302 3 High Currnt, ow Dropout Voltag Rgulator djustabl, Fast Rspons Tim FTURS djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 ow Dropout Voltag of 370mV @ 3 xtrmly Fast Transint
More informationTime of Arrival Estimation for WLAN Indoor Positioning Systems using Matrix Pencil Super Resolution Algorithm
Tim of Arrival Estimation for WLAN Indoor Positioning Systms using Matrix Pncil Supr Rsolution Algorithm Ali AASSIE ALI 1, and A. S. OMAR 2 FEIT- IESK,Chair of Microwav and Communication Enginring Postfach
More information1.1 Transmission line basic concepts: Introduction to narrow-band matching networks
. Transmission lin basic concpts: ntroduction to narrow-band matching ntworks March Francsc Torrs, luís Pradll, Jorg Miranda oltag and currnt in th transmission lin For any losslss transmission lin: whr
More informationMigration ATV11 - ATV12
Th ATV12 is compatibl with th ATV11 (latst vrsion), nvrthlss som diffrncs can xist btwn both drivs. Both modls (ATV11 and ATV12) ar availabl in hatsink or bas plat vrsions. Attntion: ATV11 "E" Dimnsions
More informationAOZ8904 Ultra-Low Capacitance TVS Diode Array
Ultra-Low Capacitanc TS Diod Array Gnral Dscription Th AOZ8904 is a transint voltag supprssor array dsignd to protct high spd data lins from lctro Static Discharg (SD) and lightning. This dvic incorporats
More information1A Low Dropout Voltage Regulator Fixed Output, Fast Response
A Low Dropout Voltag Rgulator Fixd Output, Fast Rspons SPX3940 FEATURES % Output Accuracy SPX3940A Guarantd.5A Pak Currnt Low Quiscnt Currnt Low Dropout Voltag of 280mV at A Extrmly Tight Load and Lin
More informationPerformance of Extended Super-Orthogonal Space -Time Trellis Coded OFDM system
Prformanc of Etndd Supr-Orthogonal Spac -im rllis Codd OFDM systm Ilsanmi B. Oluwafmi, Studnt Mmbr,IEEE, and Stanly H. Mnny, Mmbr IEEE School of Elctrical, Elctronic and Computr Enginring Univrsity of
More informationSignals and Systems Fourier Series Representation of Periodic Signals
Signals and Systms Fourir Sris Rprsntation of Priodic Signals Chang-Su Kim Introduction Why do W Nd Fourir Analysis? Th ssnc of Fourir analysis is to rprsnt a signal in trms of complx xponntials x t a
More informationOptical modulation by carrier depletion in a silicon PIN diode
Optical modulation by carrier depletion in a silicon PIN diode Delphine Marris-Morini, Xavier Le Roux, Laurent Vivien, Eric Cassan, Daniel Pascal, Mathieu Halbwax, Sylvain Maine, Suzanne Laval Institut
More informationEMD4 / UMD4N V CC I C(MAX.) R 1 R 2. 50V 100mA. 47kW. V CC -50V -100mA 10kW. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu EMT6 UMT6 V CC I C(MAX.) R 1 R 2 50V 100mA 47kW 47kW (1) (2) (3) (6) (5) (4) EMD4 (SC-107C)
More information3A High Current, Low Dropout Voltage Regulator
SPX29300/01/02/03 3 High Currnt, Low Dropout Voltag Rgulator djustabl & Fixd Output, Fast Rspons Tim FETURES djustabl Output Down To 1.25V 1% Output ccuracy Output Currnt of 3 Low Dropout Voltag of 450mV
More informationInvestigation of Power Factor Behavior in AC Railway System Based on Special Traction Transformers
J. Elctromagntic Analysis & Applications, 00,, ** doi:0.436/jmaa.00.08 Publishd Onlin Novmbr 00 (http://www.scirp.org/journal/jmaa) Invstigation of Powr Factor Bhavior in AC Railway Systm Basd on Spcial
More informationDTD114GK V CEO I C R. 50V 500mA 10kW. Datasheet. NPN 500mA 50V Digital Transistors (Bias Resistor Built-in Transistors) Outline Parameter Value SMT3
NPN 500mA 50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu SMT3 V CEO I C R 50V 500mA 10kW Bas Emittr Collctor DTD114GK SOT-346 (SC-59) Faturs 1) Built-In Biasing
More informationSGM8521/2/4 150kHz, 4.7µA, Rail-to-Rail I/O CMOS Operational Amplifiers
// PRODUCT DESCRIPTION Th (singl),sgm8 (dual) and SGM8 (quad) ar rail-to-rail input and output voltag fdback amplifirs offring low cost. Thy hav a wid input common-mod voltag rang and output voltag swing,
More informationWPCA AMEREN ESP. SEMINAR Understanding ESP Controls. By John Knapik. 2004, General Electric Company
WPCA AMEREN ESP SEMINAR Undrstanding ESP Controls By John Knapik 2004, Gnral Elctric Company Efficincy vs. Spcific Corona Powr KNOW WHERE YOUR ESP RUNS ON THE CURVE 99.9 99.0 Collction Efficincy (Prcnt)
More informationEMD3 / UMD3N / IMD3A V CC I C(MAX.) R 1 R 2. 50V 100mA. 10k. 10k. 50V 100mA. 10k. 10k. Datasheet
NPN + PNP Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr Valu MT6 UMT6 V CC I C(MX.) Paramtr V CC I C(MX.) 50V 100m 10k 10k Valu 50V
More informationSquare VLF Loop Antenna, 1.2 m Diagonal ~ Mechanical and Electrical Characteristics and Construction Details ~ Whitham D. Reeve
Squar VLF Loop Antnna, 1. m Diagonal ~ Mchanical and Elctrical Charactristics and Construction Dtails ~ Whitham D. Rv 1. Dimnsions Th loop antnna dscribd hr has a squar shap with a diagonal lngth of 1.07
More informationEnhancing the Performance of Ultra-Tight Integration of GPS/PL/INS: A Federated Filter Approach
Journal of Global Positioning Systms (2006) Vol. 5, No. 1-2:96-104 Enhancing th Prformanc of Ultra-ight Intgration of GPS/PL/INS: A Fdratd Filtr Approach D. Li, J. Wang, S. Babu School of Survying and
More informationCharacteristics of BJT-2
PLEASE S HP://ENGNEERS.N/ ENGNEERS- ONSULANS LEURE NOES SERES ELERONS ENGNEERNG 1 YEAR UPU haractristics of J-2 Output haractristics for ommon Emittr configuration: h output charactristic for transistor
More informationImpact Analysis of Damping Resistors in Damped Type Double Tuned Filter on Network Harmonic Impedance
pact Analysis of Damping Rsistors in Dampd Typ Doubl Tund Filtr on Ntwork Harmonic pd R.Madhusudhana Rao Assistant Profssor, Elctrical and Elctronics Dpartmnt V R Siddhartha Enginring Collg, Vijayawada,
More informationNarrow-wall slotted waveguide array antenna with low cross-polarization filter
6th Intrnational Confrnc on Machinr, Matrials, Environmnt, Biotchnolog and Computr (MMEBC 06) Narrow-wall slottd wavguid arra antnna with low cross-polarization filtr Guoan Xiong, a, Jin Pan, b and Bouan
More informationHSMP-482B RF power limiter diode
Products > RF Is/iscrts > PIN iods > Surfac Mount > HSMP-482 HSMP-482 RF powr limitr diod scription ifcycl status: ctiv Faturs Th HSMP-482x family of low rsistanc PIN diods ar optimizd for switch applications
More information16 th Coherent Laser Radar Conference (June 20, 2011, Long Beach CA, USA)
Novmbr 3, 11 16 th Cohrnt Lasr adar Confrnc 1/18 16 th Cohrnt Lasr adar Confrnc (Jun, 11, Long Bach CA, USA) Dvlopmnt of Cohrnt -μm Diffrntial Absorption and Wind Lidar with lasr frquncy offst locking
More informationGrid Impedance Estimation for Islanding Detection and Adaptive Control of Converters
Grid Impdanc Estimation for Islanding Dtction and Adaptiv Control of Convrtrs Abdlhady Ghanm, Mohamd Rashd, Mark Sumnr, M. A. El-says and I. I. I. Mansy Dpartmnt of Elctrical and Elctronics Enginring,
More informationRotor Speed Control of Micro Hydro Synchronous Generator Using Fuzzy PID Controller
Procdings of th 2nd Sminar on Enginring and Information Tchnology Rotor Spd Control of Micro Hydro Synchronous Gnrator Using Fuzzy PID Controllr C. S. Chin K. T. K. To P. Nlakantan Elctrical and Elctronics
More informationRobust Sensorless Control of BLDC Motor using Second Derivative Function of the Sum of Terminal Voltages
SERBIAN JOURNAL OF ELECTRICAL ENGINEERING Vol. 1, No., Jun 13, 75-91 UDK: 61.314.1:681.515 DOI: 1.98/SJEE131144B Robust Snsorlss Control of BLDC Motor using Scond Drivativ Function of th Sum of Trminal
More informationAsian Power Electronics Journal
Asian Powr Elctronics Journal, Vol.5 No.1 Aug 211 Asian Powr Elctronics Journal PERC, HK PolyU i Asian Powr Elctronics Journal, Vol.5 No.1 Aug 211 Copyright Th Hong Kong Polytchnic Univrsity 211 All right
More informationUMH8N / IMH8A V CEO I C R 1. 50V 100mA 10k. Datasheet. Outline. Inner circuit
NPN 100m 50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Outlin Paramtr V CO I C Tr1 and Tr2 50V 100m 10k UMT6 UMH8N SOT-363 (SC-88) SMT6 IMH8 SOT-457 (SC-74) Faturs 1) Built-In
More informationTest Results of a Digital Beamforming GPS Receiver in a Jamming Environment Alison Brown and Neil Gerein, NAVSYS Corporation
Tst Rsults of a Digital Bamforming GPS Rcivr in a Jamming Environmnt Alison Brown and Nil Grin, NAVSYS Corporation BIOGRAPHY Alison Brown is th Prsidnt and CEO of NAVSYS Corporation. Sh has a PhD in Mchanics,
More information1/24/2017. Electrical resistance
1/24/2017 Photocopirs and th National Grid Photoconductors so far.. On xampl of a smiconducting matrial Elctrical insulator in th dark, conductor in th light mportant componnt in a photocopir butt Slctiv
More informationComparison of Conventional Subspace-Based DOA Estimation Algorithms With Those Employing Property-Restoral Techniques: Simulation and Measurements
'EEE CUPC' 96, Cambridg, MA, Sptmbr 29 - Octobr 2, 1996 Comparison of Convntional Subspac-Basd DOA Estimation Algorithms With Thos Employing Proprty-Rstoral Tchniqus: Simulation and Masurmnts Rias Muhamd
More informationA Pilot Aided Averaging Channel Estimator for DVB-T2
> mm 13-48 IEEE BMSB 2013 < 1 A Pilot Aidd Avraging Channl Estimator for DVB-T2 Spiridon Zttas, Pavlos I. Lazaridis, Zaharias D. Zaharis, Stylianos Kasampalis, and John Cosmas, Snior Mmbr, IEEE Abstract
More informationEMA5 / UMA5N / FMA5A. V CC -50V -100mA 2.2kW 47kW I C(MAX.) R 1 R 2. Datasheet
M5 / UM5N / FM5 PNP -100m -50V Complx Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Faturs Paramtr V CC -50V -100m 2.2kW 47kW I C(MX.) R 1 R 2 1) Built-In Biasing Rsistors. 2) Two DT123J
More informationSGM Ω, 300MHz Bandwidth, Dual, SPDT Analog Switch
GENERAL DESCRIPTION Th SGM4717 is a dual, bidirctional, singl-pol/ doubl-throw (SPDT) CMOS analog switch dsignd to oprat from a singl 1.8V to 5.5V supply. It faturs high-bandwidth (300MHz) and low on-rsistanc
More informationLNA IN GND GND GND GND IF OUT+ IF OUT- 7. Product Description. Ordering Information. GaAs HBT GaAs MESFET InGaP HBT
LOW NOISE AMPLIFIER/ RoHS Compliant & Pb-Fr Product Packag Styl: SOIC- Faturs Singl V to.v Powr Supply MHz to MHz Opration db Small Signal Gain.dB Cascadd Nois Figur.mA DC Currnt Consumption -dbm Input
More informationAP85T03GH/J RoHS-compliant Product Advanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
P85T3GH/J RoHS-compliant Product dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 6mΩ Fast Switching G I D 75 S Dscription Th TO-252
More informationRecent Progress on VLF Wave and Its Interactions with Energetic Particles in the Magnetosphere
IOSR Journal of Applid Physics (IOSR-JAP) -ISSN: 78-4861.Volum 9, Issu 3 Vr. III (May - Jun 017), PP 76-81 www.iosrjournals.org Rcnt Progrss on VLF Wav and Its Intractions with Enrgtic Particls in th Magntosphr
More informationChalmers Publication Library
Chalmrs Publication Library Ovrviw of dvlopmnts of th lvn Fds This documnt has bn downloadd from Chalmrs Publication Library (CPL). It is th author s vrsion of a work that was accptd for publication in:
More informationFAN A, 1.2V Low Dropout Linear Regulator for VRM8.5. Features. Description. Applications. Typical Application.
www.fairchildsmi.com 2.7A, 1.2V Low Dropout Linar Rgulator for VRM8.5 Faturs Fast transint rspons Low dropout voltag at up to 2.7A Load rgulation: 0.05% typical Trimmd currnt limit On-chip thrmal limiting
More informationUS6H23 / IMH23 V CEO 20V V EBO 12V. 600mA R k. Datasheet. Outline Parameter Tr1 and Tr2 TUMT6 SMT6
NPN 600m 20V Digital Transistors (Bias Rsistor Built-in Transistors) For Muting. Datasht Outlin Paramtr Tr1 and Tr2 TUMT6 SMT6 V CO 20V V BO 12V I C 600m R US6H23 1 4.7k IMH23 SOT-457 (SC-74) Faturs 1)
More informationCoexistence between WiMAX and Existing FWA Systems in the Band 3500 MHz
Procdings of th Intrnational MultiConfrnc of Enginrs and Computr Scintists 28 Vol II IMECS 28, 19-21 March, 28, Hong Kong Coxistnc btwn WiMAX and Existing FWA Systms in th Band 35 MHz Zaid A. Shamsan,
More informationEngineering 1620: High Frequency Effects in BJT Circuits an Introduction Especially for the Friday before Spring Break
Enginring 162: High Frquncy Efcts in BJT ircuits an Introduction Espcially for th Friday bfor Spring Brak I hav prpard ths nots bcaus on th day bfor a major vacation brak som popl find it ncssary to lav
More informationALD2724E/ALD2724 DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER ADVANCED LINEAR DEVICES, INC.
TM ADVANCED LINEAR DEVICES, INC. EPAD ALD2724E/ALD2724 E N A B L E D DUAL EPAD PRECISION HIGH SLEW RATE CMOS OPERATIONAL AMPLIFIER KEY FEATURES Factory pr-trimmd V OS V OS =25µV @ I OS =.1pA 5V/µs slw
More informationAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvancd Powr N-CHNNEL ENHNCEMENT MODE Elctronics Corp. POWER MOSFET Low Gat Charg D BV DSS 3V Simpl Driv Rquirmnt R DS(ON) 8mΩ Fast Switching I D 5 G S Dscription P5N3GH/J RoHS-compliant Product TO-252
More informationInverter fault Analysis in Permanent Magnet Synchronous Motor using Matlab & Simulink
Invrtr fault Analysis in Prmannt Magnt Synchronous Motor using Matlab & Simulink 1 Shashank Gupta, 2 Ashish Srivastava, 3 Dr. Anurag Tripathi 1 Sr. Lcturr, MPEC, Kanpur, 2 Sr. Lcturr, MPEC, Kanpur, 3 Associat
More informationHSMS-2823 RF mixer/detector diode
Products > RF Is/iscrts > Schottky iods > Surfac Mount > HSMS-282 HSMS-282 RF mixr/dtctor diod scription ifcycl status: ctiv Faturs Th HSMS-282x family of schottky diods ar th bst all-round choic for most
More informationThe Trouton Rankine Experiment and the End of the FitzGerald Contraction
Th Trouton Rankin Exprimnt and th End of th FitzGrald Contraction Dr. Adrian Sfarti 1. Abstract Assuming that FitzGrald was right in his contraction hypothsis, Trouton sought for mor positiv vidnc of its
More informationIMP528 IMP528. High-Volt 220 V PP Driv. ive. Key Features. Applications. Block Diagram
POWER POWER MANAGEMENT MANAGEMENT High-Volt oltag E amp p Driv ivr 220 V PP Driv iv Th is an Elctroluminscnt (E) lamp drivr with th four E lamp driving functions on-chip. Ths ar th switch-mod powr supply,
More informationChapter 2 Fundamentals of OFDM
Chaptr 2 Fundamntal of OFDM 2. OFDM Baic [9] Th baic principl of OFDM i to divid th high-rat data tram into many low rat tram that ach i tranmittd imultanouly ovr it own ubcarrir orthogonal to all th othr.
More information4.5 COLLEGE ALGEBRA 11/5/2015. Property of Logarithms. Solution. If x > 0, y > 0, a > 0, and a 1, then. x = y if and only if log a x = log a y.
/5/05 0 TH EDITION COLLEGE ALGEBRA 4.5 Eponntial and Logarithmic Equations Eponntial Equations Logarithmic Equations Applications and Modling LIAL HORNSBY SCHNEIDER 4.5-4.5 - Proprty of Logarithms If >
More informationReal Time Speed Control of a DC Motor Based on its Integer and Non-Integer Models Using PWM Signal
Enginring, Tchnology & Applid Scinc Rsarch Vol. 7, No. 5, 217, 1976-1981 1976 Ral Tim Spd Control of a DC Motor Basd on its Intgr and Non-Intgr Modls Using PWM Signal Abdul Wahid Nasir Elctrical & Elctronics
More informationFrequency Estimation of Unbalanced Three-Phase Power Systems Using the Modified Adaptive Filtering
Amrican Journal of Signal Procssing 05, 5(A): 6-5 DOI: 0.593/s.ajsp.0.03 Frquncy Estimation of Unbalancd Thr-Phas Powr Systms Using th Modifid Adaptiv Filtring Amir Rastgarnia,*, Azam Khalili, Vahid Vahidpour,
More informationη = ; (3) QUANTITATIVE INTERPRETATION OF PRECIPITATION RADAR 7R.3 MEASUREMENTS AT VHF BAND Edwin F. Campos 1*, Frédéric Fabry 1, and Wayne Hocking 2
7R.3 QUANTITATIVE INTERPRETATION OF PRECIPITATION RADAR MEASUREMENTS AT VHF BAND Edwin F. Campos 1*, Frédéric Fabry 1, and Wayn Hocking 1 Dpartmnt of Atmosphric and Ocanic Scincs, McGill Univrsity, Montral,
More informationQUAD/DUAL N-CHANNEL DEPLETION MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
TM DVNCD INR DVIC, INC. QUD/DU N-CHNN DPTION MOD PD PRCIION MTCHD PIR MOFT RRY PD N B D D485/D495 VG(th)= -.5V GNR DCRIPTION D485/D495 ar high prcision monolithic quad/dual dpltion mod N-Channl MOFTs matchd
More informationFuzzy Anti-Windup Schemes for PID Controllers
Intrnational Journal of Applid Enginring Rsarch ISSN 9734562 Volum Numbr 3 (26) pp. 29536 Rsarch India Publications http://www.ripublication.com/ijar.htm Fuzzy AntiWindup Schms for PID Controllrs E. Chakir
More informationAdvanced Power N-CHANNEL ENHANCEMENT MODE Electronics Corp.
dvancd Powr N-CHNNEL ENHNCEMENT MOE Elctronics Corp. POWER MOSFET Low On-rsistanc BV SS 4V Singl riv Rquirmnt R S(ON) mω Surfac Mount Packag I 32 scription dvancd Powr MOSFETs from PEC provid th dsignr
More informationLecture 19: Common Emitter Amplifier with Emitter Degeneration.
Whits, EE 320 Lctur 19 Pag 1 of 10 Lctur 19: Common Emittr Amplifir with Emittr Dgnration. W ll continu our discussion of th basic typs of BJT smallnal amplifirs by studying a variant of th CE amplifir
More informationEECE 301 Signals & Systems Prof. Mark Fowler
EECE 301 Signals & Systms Prof. Mark Fowlr ot St #25 D-T Signals: Rlation btwn DFT, DTFT, & CTFT Rading Assignmnt: Sctions 4.2.4 & 4.3 of Kamn and Hck 1/22 Cours Flow Diagram Th arrows hr show concptual
More informationIntroduction to Medical Imaging. Signal Processing Basics. Strange Effects. Ever tried to reduce the size of an image and you got this?
Strang Effcts Introduction to Mdical Imaging Evr trid to rduc th siz of an imag and you got this? Signal Procssing Basics Klaus Mullr Computr Scinc Dpartmnt Stony Brook Univrsity W call this ffct aliasing
More informationCATTLE FINISHING RETURN
CATTLE FINISHING RETURN S E R I E S Novmbr 2011 CATTLE FINISHING NET RETURNS This articl discusss rcnt trnds in fding cost of gain and cattl finishing profitability. Svral sourcs of data wr usd to comput
More informationDTA123E series V CC I C(MAX.) R 1 R 2. 50V 100mA 2.2k 2.2k. Datasheet. PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)
DT123 sris PNP -100m -50V Digital Transistors (Bias Rsistor Built-in Transistors) Datasht Paramtr V CC I C(MX.) R 1 R 2 Valu 50V 100m 2.2k 2.2k Faturs 1) Built-In Biasing Rsistors, R 1 = R 2 = 2.2k. Outlin
More informationQUAD/DUAL N-CHANNEL ENHANCEMENT MODE EPAD PRECISION MATCHED PAIR MOSFET ARRAY
TM DVNCD INR DVICS, INC. QUD/DU N-CHNN NHNCMNT MOD PD PRCISION MTCHD PIR MOSFT RRY PD D84/D94 N B D VGS(th)= +.4V GNR DSCRIPTION D84/D94 ar high prcision monolithic quad/dual nhancmnt mod N-Channl MOSFTS
More information40 Gb/s silicon photonics modulator for TE and TM polarisations
40 Gb/s silicon photonics modulator for TE and TM polarisations F. Y. Gardes,* D. J. Thomson, N. G. Emerson and G. T. Reed Advanced Technology Institute, University of Surrey Guildford, Surrey, GU2 7XH,
More informationDepartment of Humanities & Religious Studies Assessment Plan (REV 6/16)
Dpartm of Humanitis & Rligious Studis Plan (REV 6/16) Larning Goals Outcoms 1. Knowldg of Human Culturs: Studs Humanitis & Rligious Studis should b abl to dmonstrat knowldg of human culturs, thir valus
More informationIEEE Broadband Wireless Access Working Group <
IEEE C802.16j-07/409 Projct Titl IEEE 802.16 Broadband Wirlss Accss Working Group A Proposal for Transmission of FCH, MAP, R-FCH, R-MAP in Non-transparnt Rlay Systm with Cntralizd
More informationAnalysis the Performance of Coded WSK-DWDM Transmission System
Intrnational Journal of Enginring and Tchnology Volum No., Dcmbr, Analysis th rformanc of Codd WSK-DWDM Transmission Systm Bobby Barua Assistant rofssor, Dpartmnt of EEE, Ahsanullah Univrsity of Scinc
More informationJ. Electrical Systems 9-3 (2013): Regular paper
Z.M.S. El- Barbary J. Elctrical Systms 9-3 (13): 31-38 JES Corrsponding author: Dpartmnt of Elctrical Enginring, Kafrlshikh Univrsity, Tanta, Egypt, Egypt Dpartmnt of Elctrical Enginring, King Khalid Univrsity,
More information2SA1579 / 2SA1514K. V CEO -120V -50mA I C. Datasheet. PNP -50mA -120V High-Voltage Amplifier Transistors. Outline
PNP -50mA 20V High-Voltag Amplifir Transistors Datasht Paramtr Valu V CEO 20V -50mA I C Outlin UMT3 SMT3 Collctor Bas Bas Emittr Emittr Collctor Faturs 1) High Brakdown Voltag (BV CEO = 20V) 2) Complmntary
More informationPAPR REDUCTION TECHNIQUES IN OFDM SYSTEMS USING DCT AND IDCT
PAPR REDUCTIO TECHIQUES I OFDM SYSTEMS USIG DCT AD IDCT 1 S. SUJATHA P. DAAJAYA 1 Rsarch Scholar, Dpartmnt ECE, Pondichrry Enginring Collg, Pondichrry, India Profssor, Dpartmnt of ECE, Pondichrry Enginring
More informationDirection Finding and Positioning Algorithm with COLD- ULA Based on Quaternion Theory
Journal of Communications Vol. 9, No., Octobr 4 Dirction Finding and Positioning Algoritm wit COLD- ULA Basd on Quatrnion Tory Lanmi Wang, Ziai Cn, and Guibao Wang Scool of Pysics and Optolctronic Enginring,
More informationStudy on the Problem of VLF Underwater Emission
Intrnationa Cor Journa of Engrg Vo.4 No.4 8 ISSN: 44-895 Study on th Probm of VLF Undrwatr Emission Xichuang n a, Bg Liu b and Ji Cui c Nava Univrsity of Engrg, Bijg 84, Cha. arxcxxx@6.com Abstract Considr
More informationQUAD PRECISION MICROPOWER CMOS VOLTAGE COMPARATOR WITH DRIVER
DVNCD INR DVICS, INC. D433/D433 QUD PRCISION MICROPOWR CMOS VOTG COMPRTOR WITH DRIVR GNR DSCRIPTION Th D433/D433 is a prcision monolithic high prformanc quad voltag comparator with opn drain output uilt
More informationDetermination of Antenna Q from the Reflection-Coefficient Data
Antnna Dsignr s Notbook Foundd by Hal Shrank Tom Milligan 84 W Polk Pl Littlton CO 8 USA Tl: + () 97-949 E-mail: tmilligan@i.org http//www.antnnadsignr.org Dtrmination of Antnna Q from th Rflction-Cofficint
More informationAdditive Manufacturing of Magnetic Components for Heterogeneous Integration
Additiv Manufacturing of Magntic Componnts for Htrognous Intgration Yi Yan 1, 2, Lanbing Liu 1, Chao Ding 1, Luu Nguyn 3, Jim Moss 3, Yunhui Mi 4 1, 4, 5, and Guo-Quan Lu 1 Dpartmnt of Matrials Scinc and
More informationStudy of Distribution of Transient Voltages in the Winding of a Transformer Subjected to VFTO and Lightning Surges
Intrnational Journal of Elctronics Enginring Rsarch. ISSN 0975-6450 Volum 9, Numbr 6 (2017) pp. 867-882 Rsarch India Publications http://www.ripublication.com Study of Distribution of Transint Voltags
More informationSimplified model enabling optimization of silicon modulators
Simplified model enabling optimization of silicon modulators Diego Perez-Galacho, Delphine Marris-Morini, Remco Stoffer, Eric Cassan, Charles Baudot, Twan Korthorst, Frederic Boeuf, Laurent Vivien To cite
More information