SMPS MOSFET. V DSS R DS(on) max I D
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1 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l Lead-Free Benefits l Ultra-Low Gate Impedance SMPS MOSFET PD IRF3708PbF IRF3708SPbF IRF3708LPbF HEXFET Power MOSFET V DSS R DS(on) max I D 30V 12mΩ 62A l Very Low R DS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current TO-220AB IRF3708 D 2 Pak IRF3708S TO-262 IRF3708L Absolute Maximum Ratings Symbol Parameter Max. Units V DS Drain-Source Voltage 30 V V GS Gate-to-Source Voltage ±12 V I T C = 25 C Continuous Drain Current, V V 62 I T C = 70 C Continuous Drain Current, V V 52 A I DM Pulsed Drain Current 248 P C = 25 C Maximum Power Dissipationƒ 87 W P C = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.58 W/ C T J, T STG Junction and Storage Temperature Range -55 to C Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)* 40 * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 Notes through are on page 1 6//04
2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 30 V V GS = 0V, I D = 250µA V (BR)DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = 4.5V, I D = 12A ƒ V GS = 2.8V, I D = 7.5A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 20 V µa DS = 24V, V GS = 0V 0 V DS = 24V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 12V Gate-to-Source Reverse Leakage -200 na V GS = -12V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 49 S V DS = 15V, I D = 50A Q g Total Gate Charge 24 I D = 24.8A Q gs Gate-to-Source Charge 6.7 nc V DS = 15V Q gd Gate-to-Drain ("Miller") Charge 5.8 V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, I D = 24.8A, V DS = 15V t d(on) Turn-On Delay Time 7.2 V DD = 15V t r Rise Time 50 I ns D = 24.8A t d(off) Turn-Off Delay Time 17.6 R G = 0.6Ω t f Fall Time 3.7 V GS = 4.5V ƒ C iss Input Capacitance 2417 V GS = 0V C oss Output Capacitance 707 V DS = 15V C rss Reverse Transfer Capacitance 52 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 213 mj I AR Avalanche Current 62 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 62 (Body Diode) showing the A I SM Pulsed Source Current integral reverse 248 (Body Diode) p-n junction diode V T V SD Diode Forward Voltage J = 25 C, I S = 31A, V GS = 0V ƒ 0.80 T J = 125 C, I S = 31A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 125 C, I F = 31A, V R =20V Q rr Reverse Recovery Charge 70 5 nc di/dt = 0A/µs ƒ 2 G D S
3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF3708/S/LPbF V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V V VGS TOP.0V 5.0V 4.5V 4.0V 3.5V 3.3V 3.0V BOTTOM 2.7V 1 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T J = 175 C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.5 I D = 62A V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3
4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 24.8A V DS = 15V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T = 175 J C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 70 V DS R D I D, Drain Current (A) Fig a. Switching Time Test Circuit V DS 90% R G V GS V Pulse Width 1 µs Duty Factor 0.1 % D.U.T. + - V DD T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t Peak T J= P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case 5
6 R DS ( on ), Drain-to-Source On Resistance ( R DS(on), Drain-to -Source On Resistance ( IRF3708/S/LPbF Ω ) Ω) VGS = 4.5V VGS = V I D = 31A I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) 12V I AS V GS Fig 12. On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T..2µF 50KΩ 3mA.3µF D.U.T. I G I D Current Sampling Resistors + V - DS V GS Q GS Fig 14a&b. Gate Charge Test Circuit and Waveform tp V(BR)DSS R G V DS 20V V G tp L D.U.T I AS 0.01Ω Q G Q GD Charge 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) Fig 13. On-Resistance Vs. Gate Voltage I D TOP A 20.7A BOTTOM 24.8A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6
7 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.113) 2.62 (.3).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.600) (.584) (.555) (.530) (.255) 6. (.240) 1.15 (.045) MIN 4.06 (.160) 3.55 (.140) LEAD ASSIGNMENTS LEAD ASSIGNMENTS HEXFET IGBTs, CoPACK 1 - GATE 1- GATE 2 - DRAIN 1- GATE 2- DRAIN 3 - SOURCE 2- COLLECTOR 3- SOURCE 4 - DRAIN 3- EMITTER 4- DRAIN 4- COLLECTOR 3X 1.40 (.055) 1.15 (.045) 3X 0.93 (.037) 0.69 (.027) 0.36 (.014) M B A M 0.55 (.022) 3X 0.46 (.018) 2.92 (.115) 2.64 (.4) 2.54 (.0) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE: THIS IS AN IRF LOT CODE 1789 AS S E MB LE D ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line position indicates "Lead-Free" INTE RNAT IONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DAT E CODE YEAR 7 = 1997 WEEK 19 LINE C 7
8 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) D 2 Pak Part Marking Information (Lead-Free) T H IS IS AN IR F 530S WIT H LOT CODE 8024 AS S EMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" N ote: "P " in as s embly line pos ition indicates "L ead-f ree" OR INT E R NAT IONAL RECTIFIER LOGO AS S E MB L Y LOT CODE F530S PART NUMBER DATE CODE YEAR 0 = 2000 WEEK 02 LINE L INT E R NAT IONAL R E CT IF IE R LOGO ASSEMBLY LOT CODE F530S PART NUMBER DATE CODE P = DE S IGNAT E S L E AD-F R E E PRODUCT (OPTIONAL) YEAR 0 = 2000 WE EK 02 A = AS S E MB L Y S IT E COD E 8
9 TO-262 Package Outline IGBT 1- GATE 2- COLLECTOR 3- EMITTER TO-262 Part Marking Information E XAMPLE : THIS IS AN IRL33L LOT CODE 1789 AS SEMBLED ON WW 19, 1997 IN THE ASSEMBLY LINE "C" Note: "P" in assembly line pos ition indicates "Lead-Free" OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C INTERNATIONAL RECTIFIER LOGO AS S E MBL Y LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLY SITE CODE 9
10 D 2 Pak Tape & Reel Infomation Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MAX. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.7 mh R G = 25Ω, I AS = 24.8 A. ƒ Pulse width 300µs; duty cycle 2%. This is only applied to TO-220AB package Data and specifications subject to change without notice. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) TAC Fax: (3) Visit us at for sales contact information.06/04
11 Note: For the most current drawings please refer to the IR website at:
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationAUTOMOTIVE MOSFET TO-220AB IRFZ44VZ A I DM. 230 P C = 25 C Power Dissipation 92 Linear Derating Factor V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 75 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically designed for Automotive
More informationIRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l Lead-Free PD - 95661 IRL3714ZPbF IRL3714ZSPbF IRL3714ZLPbF HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC
More informationV DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationAUTOMOTIVE MOSFET IRLZ44Z A I DM. 204 P C = 25 C Power Dissipation 80 Linear Derating Factor V GS Gate-to-Source Voltage ± 16
AUTOMOTIVE MOSFET Features Logic Level Advanced Process Technology Ultra Low On-Resistance 175 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax G Description Specifically
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationTO-220AB. IRF2807ZPbF. 350 P C = 25 C Maximum Power Dissipation 170 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationTO-220AB IRF1404Z. Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax Description This HEXFET Power MOSFET utilizes
More informationIRLR8103VPbF. Absolute Maximum Ratings. Thermal Resistance PD A DEVICE CHARACTERISTICS. IRLR8103V 7.9 mω Q G Q SW Q OSS.
PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationIRL3714Z IRL3714ZS IRL3714ZL
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power PD - 94798 IRL3714Z IRL3714ZS IRL3714ZL HEXFET Power MOSFET V DSS R DS(on) max Qg 20V 16m: 4.8nC Benefits l l l Low
More informationIRFZ44ES/L. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 0.023Ω I D = 48A PRELIMINARY
l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Applications l l Ultra-Low Gate Impedance SMPS MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationAbsolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D
PD - 95212A IRF7809AVPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 0%
More informationIRLB8721PbF. V DSS R DS(on) max Qg (typ.) 30V GS = 10V 7.6nC. HEXFET Power MOSFET. Applications. Benefits. Absolute Maximum Ratings
PD - 97390 Applications l Optimized for UPS/Inverter Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification
More informationV DSS = -60V. R DS(on) = 0.50Ω I D = -1.8A SOT-223. Absolute Maximum Ratings. Thermal Resistance. HEXFET Power MOSFET
HEXFET Power MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Repetitive Avalanche Rated l P-Channel l Fast Switching l Ease of Paralleling l Lead-Free Description Third Generation
More informationIRF7700GPbF. HEXFET Power MOSFET V DSS R DS(on) max I D
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationIRL8113 IRL8113S IRL8113L
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power V DSS PD - 95821 IRL8113 IRL8113S IRL8113L HEXFET Power MOSFET R DS(on) max Qg (Typ.) 30V 6.0m: 23nC Benefits l l
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD- 92005 HEXFET Power MOSFET V DSS Rds(on) max I D 400V 0.55Ω A Benefits l Low
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
More informationIRFP054V. HEXFET Power MOSFET V DSS = 60V. R DS(on) = 9.0mΩ I D = 93Aˆ. Absolute Maximum Ratings. Thermal Resistance PD
l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationD-Pak TO-252AA. I-Pak TO-251AA. 1
l PChannel l Surface Mount (IRFR930) l Straight Lead (IRFU930) l Advanced Process Technology l Fast Switching l Fully Avalanche Rated l LeadFree Description Third Generation HEXFETs from International
More informationV DSS R DS(on) max Qg. 380 P C = 25 C Maximum Power Dissipation 89 P C = 100 C Maximum Power Dissipation Linear Derating Factor
Applications l High Frequency Synchronous Buck Converters for Computer Processor Power l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use Benefits
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l Logic-Level Gate Drive l Surface Mount l dvanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l Fast Switching l Fully valanche Rated Description G PD - 9376C HEXFET Power MOSFET
More informationIRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.
PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
More informationTO-220AB IRFB3307. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 11. V/ns T J Operating Junction and -55 to
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationHEXFET Power MOSFET V DSS = -12V. R DS(on) = 0.05Ω. l Ultra Low On-Resistance l P-Channel MOSFET. Thermal Resistance.
l Ultra Low On-Resistance l P-Channel MOSFET l SOT-23 Footprint l Low Profile (
More informationIRL3102S. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013W I D = 61A PRELIMINARY
l l l l l Advanced Process Technology Surface Mount Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically
More informationTO-220AB IRFB4310. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 14
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Worldwide Best R DS(on)
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
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