4MBI450VB-120R1-50. IGBT Power Module (V series) 1200V/450A/IGBT, ±900V/450A/RB-IGBT, 4-in-1 package. IGBT Modules. [Thermistor] [Inverter] 15
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1 IGBT Power Module ( series) 12/45A/IGBT, ±/45A/RBIGBT, 4in1 package Features Higher efficiency Optimized Advanced Ttype circuit ReveseBlocking IGBT as for AC Switch Low inductance module structure Applications Inverter for motor drive Uninterruptible powre supply Power conditioner for P, Wind turbine Outline drawing (Unit : mm) Weight: 1g (typ.) Equivalent Circuit [AC switch] T2 RBIGBT (Reverse Blocking T3 2 [Inverter] 15 T1 T (U) [Thermistor] 1 8 9
2 Absolute Maximum Ratings (at Tc= 25 o C unless otherwise specified) Inverter AC switch Collector power dissipation Junction temperature Operating temperature CollectorEmitter voltage GateEmitter voltage Collector current Item CollectorEmitter voltage GateEmitter voltage Collector current IGBT FWD Collector power dissipation Junction temperature Operating temperature Case temperature Storage temperature Isolation between terminal and copper base voltage (*1) Mounting Symbol CES GES I C pulse Screw Main terminals M8. torque Sense terminals M4 2.1 (*1) All terminals should be connected together during the test. (*2) Two thermistor terminals should be connected together, other terminals should be connected together and shorted to base plate during the test. (*3) Recommended value : Mounting 3. ~ 6. Nm (M5) Recommended value : Main Terminals 8. ~. Nm (M8) Recommended value : Sense Terminals 1.8 ~ 2.1 Nm (M4) I C I C pulse I C I C pulse P C T j T jop CES GES I C P C T j T jop T c T stg iso Continuous 1ms 1 device AC: 1min. Condition Continuous 1ms 1 device T c =25 o C T c = o C T c =25 o C T c =8 o C 4 M5 6. Maximum Unit Rating 12 A ±2 45 A W o C ± A ±2 45 A 198 W o C 4 ~ 125 AC N m 2
3 Reverse recovery time t rr Electrical characteristics (at Tj= 25 C unless otherwise specified) Item Symbol Condition Characteristics min. typ. max. Units Zero gate voltage I GE = Collector current CES CE = 12 6 ma CE = GateEmitter I leakage current GES GE = ±2 12 na GateEmitter CE = 2 threshold voltage GE(th) I C = 45mA T j =25 o GE = 15 C CE(sat) I C = 45A 2.2 CollectorEmitter (chip) T j =15 o C 2.25 saturation voltage T j =25 o GE = 15 C CE(sat) I C = 45A 2.25 (terminal) T j =15 o C 2.3 Internal gate R G(int) 1.7 Ω Input capacitance C ies CE =, GE =, f=1mhz 35 nf t on Switching mode: A.65 Turnon time t r = CC 5.3 t r(i) I C = 45A. μs Turnoff time Forward on voltage 1.85 (chip) T j =15 o C 1.8 I F = 45A T j =25 o C F 1.95 (terminal) T j =15 o C 1.9 F GE = R G = I F = ± /.22Ω 45A T j =25 o C Switching mode: B Reverse recovery time t rr CC = 5 I F = 45A.15 μs GE = ±15 R G = +2.7/18Ω Zero gate voltage I GE = Collector current CES CE = 6 ma GateEmitter I CE = leakage current GES GE = ±2 12 na GateEmitter CE = 2 threshold voltage GE(th) I C = 45mA CE(sat) GE = 15 T j =25 C CollectorEmitter (chip) I C = 45A T j =125 C 2.7 saturation voltage CE(sat) GE = 15 T j =25 C (terminal) I C = 45A T j =125 C 2.75 Internal gate R G(int) 5.2 Ω Input capacitance C ies CE =, GE =, f=1mhz 26.5 nf t on Switching mode: B. Turnon time t r CC = 5.2 t r(i) I C = 45A. μs Turnoff time GE = ± R G = +2.7/18Ω. CC = 5 I F =45A.2 μs Switching mode: A GE = ±15 R G =+3.9/.22Ω 5 R T=25 o C Resistance Thermistor T= o C Ω B alue B T=25/5 o C K (*1) Please refer to section 8, there is definition of A mode and B mode. Inverter ACswitch Thermal resistance characteristics Item Symbol Condition Thermal resistance (1device) Contact thermal R th(jc) R th(cf) T1, T4 IGBT T1, T4 FWD T2, T3 RBIGBT T1, T4 with thermal Characteristics min. typ. max resistance T2, T3 compound.83 (*2) This is the value which is defined mounting on the additional cooling fin with thermal compound. 3 Units o C/W
4 Definitions of switching time CC L S R G GE L CE A GE CE I C t rr I rr 9% % % t r(i) ~ ~ ~ I C CE 9% 9% % I C t on t r Definitions of switching mode P CC T2 G T2 T1 G T1 T2 E T1 E CC1 M N CC T3 E T3 G T3 T4 T4 G U T4 E SW mode A B Load L T1 T2 T3 T4 MU SW ON OFF OFF MU OFF OFF ON SW PU OFF ON SW OFF UN OFF SW ON OFF SW: Connect to drive circuit and input gate signal ON: Bias voltage of gate +15 OFF: Reverse bias voltage of gate 15 CC = CC1 /2 4
5 Collector current vs. CollectorEmitter voltage T j = 25 o C / chip GE = CollectorEmitter voltage: CE [] Collector current vs. CollectorEmitter voltage T j = 125 o C / chip GE = CollectorEmitter voltage: CE [] Collector current vs. CollectorEmitter voltage GE = 15 / chip T 125 o j =25 o C C 15 o C CollectorEmitter voltage: CE [] CollectorEmitter voltage vs. GateEmitter voltage (typ.) T j = 25 o C / chip 8 Collector Emitter voltage: CE [] I C =A I C =45A I C =225A Gate Emitter voltage: GE [] Capacitance vs. CollectorEmitter voltage (typ.) GE =, f= 1MHz, T j = 25 C 8 Dynamic gate charge (typ.) CC =, I C = 45A, T j =25 C 2 Capacitance: C ies, C oes, C res [nf] C ies C res C oes CollectorEmitter voltage: CE [] Gate charge: Q G [nc] 5 Collector Emitter voltage: CE [] CE GE Gate Emitter voltage: GE []
6 Revese bias safe operating area (max.) Forward current vs. forward on voltage (typ.) GE =±15, R G Recommended, T j =15 o C (T1, T4) chip T1, T4 (Terminal )(*1) T j =25 o C 8 Forward current : I F [A] T j =15 o C 4 2 RBSOA (Repetitive pulse) CollectorEmitter voltage: CE [] CollectorEmitter voltage: CE [] (*1) Please refer to page 1 for the terminal definition Reverse recovery withstand capability for RBIGBT T j = 125 o C 12 1 Transient thermal resistance (max.) I RP [A] P max [T2,T3]=4kW 12 RP [] Thermal resistance: R th(jc) [ o C/W ].1.1 FWD IGBT t n sec r n IGBT FWD Pulse width: P W [sec] 6
7 [SW mode: A] [SW mode: A] Switching time vs. Collector current (typ.) Switching time vs. Collector current (typ.) CC =5, GE =±15, R G =+3.9/.22Ω, T j =125,15 o C (T1, T4) CC =5, I C = 45A, GE =±15, T j =125, 15 o C Switching time: t on, t r,, [nsec] Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] t on T j =15 o C Switching time: t on, t r,, [nsec] Gate resistance: R G [Ω] (T1, T4) [ SW mode: A ] [SW mode: A (T2, T3 RBIGBT recovery)] T1,T4 IGBT switching, T2,T3 RBIGBT recovery Reverse recovery characteristics (typ.) Switching loss vs. Collector current (typ.) CC = 5, GE =±15, R G =+3.9/.22Ω (T1, T4) CC = 5, GE =±15, R G =+3.9/.22Ω (T1, T4) 12 I rr (125 o C) t rr (125 o C) Forward current: I F [A] t r Switching loss: E on, E off, E rr [mj/pulse ] t on T j =15 o C t r T j =15 o C E off E on E rr Switching loss: E on, E off, E rr [mj/pulse ] [ SW mode: A ] T1,T4 IGBT switching, T2,T3 RBIGBT recovery Switching loss vs. gate resistance (typ.) CC = 5, I C = 45A, GE =± T j =15 o C E on E off.1 1 Gate resistance : R G [Ω] (T1, T4) E rr 7
8 [ACswitch (T2, T3)] Collector current vs. CollectorEmitter voltage (typ.) T j = 25 o C / chip GE = CollectorEmitter voltage: CE [] [ACswitch (T3, T4)] Collector current vs. CollectorEmitter voltage (typ.) T j = 125 o C / chip GE = CollectorEmitter voltage: CE [] [ACswitch (T2, T3)] Collector current vs. CollectorEmitter voltage (typ.) GE =15 / chip [ACswitch (T2, T3)] CollectorEmitter voltage vs. GateEmitter voltage (typ.) T j = 25 o C / chip 8 T j =25 o C CollectorEmitter voltage: CE [] Collector Emitter voltage: CE [] I C = A I C = 45A I C = 225A Gate Emitter voltage: GE [] [ACswitch (T2, T3)] Capacitance vs. CollectorEmitter voltage (typ.) GE =, f = 1MHz, T j = 25 o C [ACswitch (T2, T3)] Dynamic gate charge (typ.) CC = 5, I C = 45A, T j = 25 o C 2 Capacitance: C ies, C oes, C res [nf] C ies C oes C res CollectorEmitter voltage: CE [] 8 Collector Emitter voltage: CE [] CE GE Gate Emitter voltage: GE [] Gate charge: Q G [nc]
9 Reverse bias safe operating area (max.) GE =±15, R G Recommended, (T2, T3) Reverse recovery withstand capability for FWD T2, T3 (Terminal) (*1) T j =15 o C RBSOA (Repetitive pulse) I RP [A] P max [T1,T4]=25kW CollectorEmitter voltage : CE [] (*1) Please refer to page 1 for the terminal definition RP [].1 Transient thermal resistance (max.) Thermal resistance: R th(jc) [ o C/W ] RBIGBT.1 t n sec r n RBIGBT Pulse width: P W [sec] 9
10 [SW mode: B] [SW mode: B] Switching time vs. collector current (typ.) Switching time vs. gate resistanec (typ.) CC =5, GE =±15, R G =+2.7/18Ω, (T2, T3) CC = 5, I C =45A, GE =±15, Switching time: t on, t r,, [nsec] t on t r Switching time: t on, t r,, [nsec] t on t r Gate resistance : R G [Ω] (T2, T3) Reverse recovery current : I rr [A] Reverse recovery time: t rr [nsec] Switching loss: E on, E off, E rr [mj/pulse ] [SW mode: B] [ SW mode B (T1,T4 FWD recovery)] T2,T3 RBIGBT switching, T1,T4 FWD recovery Reverse recovery characteristics (typ.) Switching loss vs. Collector current (typ.) CC = 5, GE =±15, R G = +2.7/18Ω, (T2, T3) CC = 5, GE =±15, R G = +2.7/18Ω, (T2, T3) 2 T j =15 o C Forward current : I F [A] [ SW mode B ] T2,T3 RBIGBT switching, T1,T4 FWD recovery Switching loss vs. gate resistance (typ.) CC = 5, I C = 45A, GE =± I rr t rr E on (125 o C) E off (125 o C) E rr (15 o C) [THERMISTOR] Temperature characteristic (typ.) E rr (125 o C) Gate resistance : R G [Ω] (T2, T3) Temperature [ o C] Switching loss: E on, E off, E rr [mj/pulse ] Resistance: R [Ω] E off (125 o C) E on (125 o C) E rr (15 o C) E rr (125 o C)
11 Warnings 1. This Catalog contains the product specifications, characteristics, data, materials, and structures as of 9/215. The contents are subject to change without notice for specification changes or other reasons. When using a product listed in this Catalog, be sure to obtain the latest specifications. 2. All applications described in this Catalog exemplify the use of Fuji's products for your reference only. No right or license, either express or implied, under any patent, copyright, trade secret or other intellectual property right owned by Fuji Electric Co., Ltd. is (or shall be deemed) granted. Fuji Electric Co., Ltd. makes no representation or warranty, whether express or implied, relating to the infringement or alleged infringement of other's intellectual property rights which may arise from the use of the applications described herein. 3. Although Fuji Electric Co., Ltd. is enhancing product quality and reliability, a small percentage of semiconductor products may become faulty. When using Fuji Electric semiconductor products in your equipment, you are requested to take adequate safety measures to prevent the equipmenrom causing a physical injury, fire, or other problem if any of the products become faulty. It is recommended to make your design failsafe, flame retardant, and free of malfunction. 4. The products introduced in this Catalog are intended for use in the following electronic and electrical equipment which has normal reliability requirements. Computers OA equipment Communications equipment (terminal devices) Measurement equipment Machine tools Audiovisual equipment Electrical home appliances Personal equipment Industrial robots etc. 5. If you need to use a product in this Catalog for equipment requiring higher reliability than normal, such as for the equipment listed below, it is imperative to contact Fuji Electric Co., Ltd. to obtain prior approval. When using these products for such equipment, take adequate measures such as a backup system to prevent the equipmenrom malfunctioning even if a Fuji's product incorporated in the equipment becomes faulty. Transportation equipment (mounted on cars and ships) Trunk communications equipment Trafficsignal control equipment Gas leakage detectors with an autoshutoff feature Emergency equipmenor responding to disasters and antiburglary devices Safety devices Medical equipment 6. Do not use products in this Catalog for the equipment requiring strict reliability such as the following and equivalents to strategic equipment (without limitation). Space equipment Aeronautic equipment Nuclear control equipment Submarine repeater equipment 7. Copyright (c) by Fuji Electric Co., Ltd. All rights reserved. No part of this Catalog may be reproduced in any form or by any means without the express permission of Fuji Electric Co., Ltd. 8. If you have any question about any portion in this Catalog, ask Fuji Electric Co., Ltd. or its sales agents before using the product. Neither Fuji Electric Co., Ltd. nor its agents shall be liable for any injury caused by any use of the products not in accordance with instructions seorth herein. 11
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