Homework Assignment 09
|
|
- Neal Tucker
- 5 years ago
- Views:
Transcription
1 Question 1 (2 points each unless noted otherwise) Homework Assignment For SPICE, Explain very briefly the difference between the multiplier M and Meg, as in a resistor has value 2M versus a resistor with value 2Meg? Answer: SPICE interprets M as milli and Meg as mega so that 2M is Ω" and 2Meg is 2,000,000 Ω. 2. Consider the following drive circuit for an IR remote control. The drive signal is a 0 5 V square wave and VV CCCC = 9 V. The average current through the LED is a) 83 ma b) Need additional information c) 41 ma d) 58.3 ma e) 525 ma Answer: The BJT is off until the LED current reaches a peak of = 58.3 ma. Then it turns on and prevents the MOSFET from turning on further. With a 70% duty cycles this peak corresponds to an average of ma, so (c). 3. The following symbol indicates which type of transistor (circle one)? (a) n-channel MOSFET (b) n-channel JFET (c) p-channel MOSFET (d) n-channel JFET (e) BJT Answer: Option (a) 4. Explain with one word/phrase what every letter in CMOS mean. Answer: Complementary Metal Oxide Semiconductor 5. A MOSFET is biased such that II DD = 1 ma. What should gg mm be so that a 1-mVchange in VV GGGG results in a 1.78 μμa change in II DD? Answer: δδii DD = gg mm δvv GGGG ( ) = (gg mm )( ) gg mm = 1.78 ma/v 1
2 6. Below are the characteristics for a MOSFET. What type of FET is this (circle one)? (a) (b) (c) (d) Enhancement PMOS Depletion PMOS Enhancement NMOS Depletion NMOS Answer : The subscript SG indicates a p- channel FET (the more common n-channel MOSFET has GS as in VV GGGG ) and note that increasing VV GGGG increases II DD, so this is an enhancement PMOS, so option (a) is the answer. 7. Which one of the MOSFETs in the circuits below behaves as a non-linear resistor? (1) (2) (3) (a) Only (1) (b) Only (2) (c) Only 3 (d) Both (1) and (3) (e) All (f) None Answer: Option (e) 8. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage? (a) (b) Answer: (a) 2
3 Question 2 For the circuit shown, ββ =350, and II CC = 2.5 ma. What is the voltage gain AA vv = vv oo vv ii? (2 points) Solution The voltage gain is approximately 1 (this is a follower; RR cc does not affect the gain) Question 3 Consider the following circuit. Assume that VV TTTT = 1.5 V, KK nn = 1.5 ma V 2, and λλ = 0. What is VV DDDD(SSSSSS)? Answer: VV DDDD(ssssss) = VV GGGG VV TTTT = = 0.5 V Question 4 The figure is a plot of the open-loop gain function for the LT1007 voltage amplifier. An engineer will use the amplifier as a non-inverting amplifier with a mid-frequency voltage gain of 10. (a) What is the GBP of the LT1007? (2 points) (b) Use the plot and estimate the bandwidth of the feedback amplifier. (2 points) (c) Write an expression for the gain AA(ff) for the feedback amplifier. (2 points) (a) The open loop gain is 120 db ( ) at ff = 10 Hz, so the GBP is 10 MHz. Alternatively, the BW is about 10 MHz when the open loop gain is 0, so the GBP is 10 MHz. (b) A voltage gain of 10 is equivalent to a gain of 20 log 10 (10) = 20 db. A horizontal line at 20 db intercepts the LT1007 gain curve at 950 khz. Alternatively, from the GBP, with a gain of 10, the bandwidth is 1 MHz. (c) The closed-loop response is AA(ff) = 10 ff 1+jj
4 Question 5 (N. 4.44) The source follower shown has VV TTTT = 0.4 V, KK nn = 0.5 ma V 2, and λλ = 0. The power supply is VV DDDD = 3 V, and CC CC1 = 1 μμf a) Design the circuit (by specifying the resistors) such that RR ii = 300K, II DDDD = 0.25 ma, and VV DDDDDD = 1.5 V. (6 points) b) Perform a quick estimate of the small-signal voltage gain. (1 point) c) Next, perform a small-signal analysis and calculate the small-signal voltage gain. (4 points) d) Perform a small-signal analysis to determine the output resistance RR oo. (4 points) e) Calculate the input resistance RR ii. (1 point) f) Calculate the lower 3-dB frequency. (3 points) g) Perform a Micro-Cap SPICE simulation to check your calculations. For the transistor, use the $GENERIC_N part, and set LAMBDA = 0, W = 200u, L = 20u, KP = 100u, and VTO = ) Perform a Dynamic DC analysis to find II DDDD and VV DDDDDD. 2) Perform an AC analysis to find the gain at 100 Hz and the lower 3-dB frequency. 3) Perform an AC analysis to find RR OO at 100 Hz. 4) Perform an AC analysis to find RR ii at 100 Hz. For the Micro-Cap SPICE analysis, show schematics for (1) (4) and for (2) (4) the simulation outputs. Pay attention to font sizes, line thickness, etc., and use annotation to clarify your work. You must also submit four separate, ready to run, SPICE files to ICON. Summarize your calculated and SPICE values in table. Solution Part (a) VV DDDDDD = 1.5 V implies that the quiescent voltage across RR ss is also 1.5 V. With II DDDD = 0.25 ma this means that RR ss = = 6K. II DD = KK NN (VV TTTT VV GGGG ) = 0.5(0.4 VV GGGG ) 2 Solving for VV GGGG (using Excel, but one can do this algebraically, a graphing calculator, or Matlab) yields VV GGGG = V. Consequently, VV GG = = V. Next we need to determine values for RR 1 and RR 2 such that RR 1 3 = 2.607, RR 1 + RR 2 and RR 1 RR 2 = 300 K Solving yields RR 1 = 2.29M and RR 2 = 345K. Part (b) This is a source follower so that the voltage gain should be 1. This is because the circuit is a source follower. However, MOSFETs have low gg mm so the voltage gain will be 10 20% less, so that a rough estimate would be AA vv
5 Part (c) Shown is a small-signal model for determining the voltage gain. Note that vv ii + vv gggg + vv OO = 0 so that vv gggg = vv ii vv OO. KCL at the source, assuming current flow away from the source gives vv OO RR SS gg mm vv gggg = 0 vv OO RR SS + gg mm (vv ii vv OO ) AA vv = vv OO vv ii = Substituting the numerical values for gg mm and RR SS yields AA vv = ( ms)(6k) 1 + ( ms)(6k) = = gg mmrr SS 1 + gg mm RR SS Part (d) Shown is a small-signal model for calculating the output resistance. KCL at the source, using the convention that current flow away from the source is gg mm vv gggg II xx + VV xx RR SS = 0 Note that vv gggg = VV xx so that the KCL equation becomes gg mm VV xx II xx + VV xx RR SS = 0 Solving for RR OO = VV xx II xx yields RR OO = RR SS (1 + gg mm RR SS ). Substituting the numerical values for gg mm and RR SS yields RR OO = 6K (1 + (6K)( ms )) = 1.14K Part (e) The gate current is essentially zero so that RR ii = RR 1 RR 2 = 299.8K 300K Part (f) The coupling capacitor CC CC1 sees the input resistance RR ii so that ff 3dB = 1 2ππRR ii CC CC1 = Hz 5
6 Part g (Micro-Cap SPICE simulation) Part 1: Dynamic DC analysis Shown is the output from the Dynamic DC analysis. Note that VV DDDDDD = V and II DDDD = ma. These values are close to the target design values. Part 2: AC analysis for gain and bandwidth. Left: Micro-Cap SPICE schematic. Right: AC analysis output. The voltage gain is The 3-dB frequency is where the gain drops to = The plot shows that this occurs at Hz. Part 3: Determining RR OO Left: Micro-Cap schematic for determining RR oo. Right: Simulation output, showing that the output resistance at 100 Hz is 1.152K 6
7 Part 4: Determining RR ii Left: Micro-Cap schematic for determining RR ii. Right: Simulation output, showing that the input resistance at 100 Hz is K Calculation Micro-Cap SPICE AA vv ff 3dB Hz Hz RR oo 1.14K 1.152K RR ii 299.8K K The voltage gain is The 3-dB frequency is where the gain drops to = The plot shows that this occurs at Hz. 7
8 Question 6 Text book problem 3.26 Question 7 Text book problem 3.37 Question 8 Text book problem 4.34 Question 9 Text book problem 4.34 Question 10 Text book problem
9 9
10 10
Homework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationExam Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance voltage?
Exam 2 Name: Score /90 Question 1 Short Takes 1 point each unless noted otherwise. 1. Below are two schematics of current sources implemented with MOSFETs. Which current source has the best compliance
More informationHomework Assignment 07
Homework Assignment 07 Question 1 (Short Takes). 2 points each unless otherwise noted. 1. A single-pole op-amp has an open-loop low-frequency gain of A = 10 5 and an open loop, 3-dB frequency of 4 Hz.
More informationHomework Assignment 06
Homework Assignment 06 Question 1 (Short Takes) One point each unless otherwise indicated. 1. Consider the current mirror below, and neglect base currents. What is? Answer: 2. In the current mirrors below,
More information55:041 Electronic Circuits
55:041 Electronic Circuits MOSFETs Sections of Chapter 3 &4 A. Kruger MOSFETs, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width = 1 10-6 m or less Thickness = 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationHomework Assignment Consider the circuit shown. Assume ideal op-amp behavior. Which statement below is true?
Question 1 (2 points each unless noted otherwise) Homework Assignment 03 1. Consider the circuit shown. Assume ideal op-amp behavior. Which statement below is true? (a) V = VV + = 5 V (op-amp operation)
More information(b) 25% (b) increases
Homework Assignment 07 Question 1 (2 points each unless noted otherwise) 1. In the circuit 10 V, 10, and 5K. What current flows through? Answer: By op-amp action the voltage across is and the current through
More informationEE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)
EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND
More informationDepletion-mode operation ( 공핍형 ): Using an input gate voltage to effectively decrease the channel size of an FET
Ch. 13 MOSFET Metal-Oxide-Semiconductor Field-Effect Transistor : I D D-mode E-mode V g The gate oxide is made of dielectric SiO 2 with e = 3.9 Depletion-mode operation ( 공핍형 ): Using an input gate voltage
More informationHomework Assignment 02
Question 1 (2 points each unless noted otherwise) 1. Is the following circuit an STC circuit? Homework Assignment 02 (a) Yes (b) No (c) Need additional information Answer: There is one reactive element
More informationBJT Amplifier. Superposition principle (linear amplifier)
BJT Amplifier Two types analysis DC analysis Applied DC voltage source AC analysis Time varying signal source Superposition principle (linear amplifier) The response of a linear amplifier circuit excited
More informationSummary. Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET. A/Lectr. Khalid Shakir Dept. Of Electrical Engineering
Summary Electronics II Lecture 5(b): Metal-Oxide Si FET MOSFET A/Lectr. Khalid Shakir Dept. Of Electrical Engineering College of Engineering Maysan University Page 1-21 Summary The MOSFET The metal oxide
More informationHomework Assignment 03 Solution
Homework Assignment 03 Solution Question 1 Determine the h 11 and h 21 parameters for the circuit. Be sure to supply the units and proper sign for each parameter. (8 points) Solution Setting v 2 = 0 h
More information55:041 Electronic Circuits
55:041 Electronic Circuits Mosfet Review Sections of Chapter 3 &4 A. Kruger Mosfet Review, Page-1 Basic Structure of MOS Capacitor Sect. 3.1 Width 1 10-6 m or less Thickness 50 10-9 m or less ` MOS Metal-Oxide-Semiconductor
More informationCommon-Source Amplifiers
Lab 2: Common-Source Amplifiers Introduction The common-source stage is the most basic amplifier stage encountered in CMOS analog circuits. Because of its very high input impedance, moderate-to-high gain,
More informationHomework Assignment 11
Homework Assignment 11 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationProf. Paolo Colantonio a.a
Prof. Paolo Colantonio a.a. 20 2 Field effect transistors (FETs) are probably the simplest form of transistor, widely used in both analogue and digital applications They are characterised by a very high
More informationHomework Assignment 12
Homework Assignment 12 Question 1 Shown the is Bode plot of the magnitude of the gain transfer function of a constant GBP amplifier. By how much will the amplifier delay a sine wave with the following
More informationES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016)
Page1 Name ES 330 Electronics II Homework # 2 (Fall 2016 Due Wednesday, September 7, 2016) Problem 1 (15 points) You are given an NMOS amplifier with drain load resistor R D = 20 k. The DC voltage (V RD
More information0.85V. 2. vs. I W / L
EE501 Lab3 Exploring Transistor Characteristics and Design Common-Source Amplifiers Lab report due on September 22, 2016 Objectives: 1. Be familiar with characteristics of MOSFET such as gain, speed, power,
More informationLecture 20. MOSFET (cont d) MOSFET 1-1
Lecture 0 MOSFET (cont d) MOSFET 1-1 Outline Continue Enhancement-type MOSFET (E- MOSFET) Characteristics C Biasing Circuits and Examples MOSFET 1- Test Yourself Complete the following statements with
More information55:041 Electronic Circuits The University of Iowa Fall Exam 3. Question 1 Unless stated otherwise, each question below is 1 point.
Exam 3 Name: Score /65 Question 1 Unless stated otherwise, each question below is 1 point. 1. An engineer designs a class-ab amplifier to deliver 2 W (sinusoidal) signal power to an resistive load. Ignoring
More informationFinal Exam. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth of the amplifier.
Final Exam Name: Score /100 Question 1 Short Takes 1 point each unless noted otherwise. 1. An engineer measures the (step response) rise time of an amplifier as t r = 0.1 μs. Estimate the 3 db bandwidth
More informationLecture 18. MOSFET (cont d) MOSFET 1-1
Lecture 18 MOSFET (cont d) MOSFET 1-1 Outline Continue Enhancement-type MOSFET (E- MOSFET) Characteristics C Biasing Circuits and Examples MOSFET 1- E-MOSFET (Quick Review) MOSFET is also known as nsulated-gate
More informationLab 3: Very Brief Introduction to Micro-Cap SPICE
Lab 3: Very Brief Introduction to Micro-Cap SPICE Starting Micro-Cap SPICE Micro-Cap SPICE is available on CoE machines under the Spectrum Software menu: Programs Spectrum Software Micro-Cap 10 Evaluation
More informationELEC 350L Electronics I Laboratory Fall 2012
ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used
More information(a) Current-controlled and (b) voltage-controlled amplifiers.
Fig. 6.1 (a) Current-controlled and (b) voltage-controlled amplifiers. Fig. 6.2 Drs. Ian Munro Ross (front) and G. C. Dacey jointly developed an experimental procedure for measuring the characteristics
More informationFigure 1: JFET common-source amplifier. A v = V ds V gs
Chapter 7: FET Amplifiers Switching and Circuits The Common-Source Amplifier In a common-source (CS) amplifier, the input signal is applied to the gate and the output signal is taken from the drain. The
More informationEE434 ASIC & Digital Systems
EE434 ASIC & Digital Systems Partha Pande School of EECS Washington State University pande@eecs.wsu.edu Spring 2015 Dae Hyun Kim daehyun@eecs.wsu.edu 1 Lecture 4 More on CMOS Gates Ref: Textbook chapter
More informationDesign and Simulation of Low Voltage Operational Amplifier
Design and Simulation of Low Voltage Operational Amplifier Zach Nelson Department of Electrical Engineering, University of Nevada, Las Vegas 4505 S Maryland Pkwy, Las Vegas, NV 89154 United States of America
More informationLab 6: MOSFET AMPLIFIER
Lab 6: MOSFET AMPLIFIER NOTE: This is a "take home" lab. You are expected to do the lab on your own time (still working with your lab partner) and then submit your lab reports. Lab instructors will be
More informationIENGINEERS-CONSULTANTS QUESTION BANK SERIES ELECTRONICS ENGINEERING 1 YEAR UPTU ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET)
ELECTRONICS ENGINEERING EC 101 UNIT 3 (JFET AND MOSFET) LONG QUESTIONS (10 MARKS) 1. Draw the construction diagram and explain the working of P-Channel JFET. Also draw the characteristics curve and transfer
More informationLab 5: MOSFET I-V Characteristics
1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect
More informationLab 5: MOSFET I-V Characteristics
1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect
More informationField Effect Transistors
Field Effect Transistors Purpose In this experiment we introduce field effect transistors (FETs). We will measure the output characteristics of a FET, and then construct a common-source amplifier stage,
More informationUNIT 3: FIELD EFFECT TRANSISTORS
FIELD EFFECT TRANSISTOR: UNIT 3: FIELD EFFECT TRANSISTORS The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There are
More informationLaboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section
Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Objective To analyze and design single-stage common source amplifiers.
More informationUniversity of Pittsburgh
University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams
More information4. Differential Amplifiers. Electronic Circuits. Prof. Dr. Qiuting Huang Integrated Systems Laboratory
4. Differential Amplifiers Electronic Circuits Prof. Dr. Qiuting Huang Integrated Systems Laboratory Differential Signaling Basics and Motivation Transmitting information with two complementary signals
More information55:041 Electronic Circuits The University of Iowa Fall Exam 1 Solution
Exam 1 Name: Score /60 Question 1 Short takes. For True/False questions, write T, or F in the right-hand column as appropriate. For other questions, provide answers in the space provided. 1. Tue of false:
More informationLecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and
Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body
More informationFall and. Answer: Below. The. assumptions. base
Homework Assignment 08 Question 1 (2 points each unless noted otherwise) 1. Sketch a two-transistor configuration using npn and pnpp BJTs that iss equivalent to a single pnpp BJT, and label the effective
More informationHomework Assignment 06
Question 1 (2 points each unless noted otherwise) Homework Assignment 06 1. True or false: when transforming a circuit s diagram to a diagram of its small-signal model, we replace dc constant current sources
More informationChapter 7: FET Biasing
Chapter 7: FET Biasing Common FET Biasing Circuits JFET Biasing Circuits Fixed Bias Self-Bias oltage-ivider Bias -Type MOSFET Biasing Circuits Self-Bias oltage-ivider Bias E-Type MOSFET Biasing Circuits
More informationBasic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati
Basic Electronics Prof. Dr. Chitralekha Mahanta Department of Electronics and Communication Engineering Indian Institute of Technology, Guwahati Module: 3 Field Effect Transistors Lecture-8 Junction Field
More informationET475 Electronic Circuit Design I [Onsite]
ET475 Electronic Circuit Design I [Onsite] Course Description: This course covers the analysis and design of electronic circuits, and includes a laboratory that utilizes computer-aided software tools for
More informationPhysics 160 Lecture 11. R. Johnson May 4, 2015
Physics 160 Lecture 11 R. Johnson May 4, 2015 Two Solutions to the Miller Effect Putting a matching resistor on the collector of Q 1 would be a big mistake, as it would give no benefit and would produce
More informationSpecial-Purpose Operational Amplifier Circuits
Special-Purpose Operational Amplifier Circuits Instrumentation Amplifier An instrumentation amplifier (IA) is a differential voltagegain device that amplifies the difference between the voltages existing
More informationPhysical Structure of CMOS Integrated Circuits
Physical Structure of CMOS Integrated Circuits Dae Hyun Kim EECS Washington State University References John P. Uyemura, Introduction to VLSI Circuits and Systems, 2002. Chapter 3 Neil H. Weste and David
More informationMicroelectronics Circuit Analysis and Design
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor Neamen Microelectronics, 4e Chapter 3-1 In this chapter, we will: Study and understand the operation
More informationChapter 8. Field Effect Transistor
Chapter 8. Field Effect Transistor Field Effect Transistor: The field effect transistor is a semiconductor device, which depends for its operation on the control of current by an electric field. There
More informationElectronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi
Electronics Prof. D. C. Dube Department of Physics Indian Institute of Technology, Delhi Module No # 05 FETS and MOSFETS Lecture No # 06 FET/MOSFET Amplifiers and their Analysis In the previous lecture
More informationMidterm 2 Exam. Max: 90 Points
Midterm 2 Exam Name: Max: 90 Points Question 1 Consider the circuit below. The duty cycle and frequency of the 555 astable is 55% and 5 khz respectively. (a) Determine a value for so that the average current
More informationPhy 335, Unit 4 Transistors and transistor circuits (part one)
Mini-lecture topics (multiple lectures): Phy 335, Unit 4 Transistors and transistor circuits (part one) p-n junctions re-visited How does a bipolar transistor works; analogy with a valve Basic circuit
More informationRadio Frequency Electronics
Radio Frequency Electronics Active Components IV Samuel Morse Born in 79 in Massachusetts Fairly accomplished painter After witnessing various electrical experiments, got intrigued by electricity Designed
More informationEE 230 Lab Lab 9. Prior to Lab
MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter
More informationUNIT-1 Bipolar Junction Transistors. Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press
UNIT-1 Bipolar Junction Transistors Text Book:, Microelectronic Circuits 6 ed., by Sedra and Smith, Oxford Press Figure 6.1 A simplified structure of the npn transistor. Microelectronic Circuits, Sixth
More informationECE 340 Lecture 40 : MOSFET I
ECE 340 Lecture 40 : MOSFET I Class Outline: MOS Capacitance-Voltage Analysis MOSFET - Output Characteristics MOSFET - Transfer Characteristics Things you should know when you leave Key Questions How do
More informationCode: 9A Answer any FIVE questions All questions carry equal marks *****
II B. Tech II Semester (R09) Regular & Supplementary Examinations, April/May 2012 ELECTRONIC CIRCUIT ANALYSIS (Common to EIE, E. Con. E & ECE) Time: 3 hours Max Marks: 70 Answer any FIVE questions All
More informationINTRODUCTION: Basic operating principle of a MOSFET:
INTRODUCTION: Along with the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available whose Gate input is electrically insulated from the main current carrying
More informationMicroelectronics Circuit Analysis and Design. MOS Capacitor Under Bias: Electric Field and Charge. Basic Structure of MOS Capacitor 9/25/2013
Microelectronics Circuit Analysis and Design Donald A. Neamen Chapter 3 The Field Effect Transistor In this chapter, we will: Study and understand the operation and characteristics of the various types
More informationThe Common Source JFET Amplifier
The Common Source JFET Amplifier Small signal amplifiers can also be made using Field Effect Transistors or FET's for short. These devices have the advantage over bipolar transistors of having an extremely
More informationDigital Electronics Part II - Circuits
Digital Electronics Part II - Circuits Dr. I. J. Wassell Gates from Transistors 1 Introduction Logic circuits are non-linear, consequently we will introduce a graphical technique for analysing such circuits
More informationPreliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B
Preliminary Exam, Fall 2013 Department of Electrical and Computer Engineering University of California, Irvine EECS 170B Problem 1. Consider the following circuit, where a saw-tooth voltage is applied
More informationQ1. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET).
Q. Explain the construction and principle of operation of N-Channel and P-Channel Junction Field Effect Transistor (JFET). Answer: N-Channel Junction Field Effect Transistor (JFET) Construction: Drain(D)
More informationEE70 - Intro. Electronics
EE70 - Intro. Electronics Course website: ~/classes/ee70/fall05 Today s class agenda (November 28, 2005) review Serial/parallel resonant circuits Diode Field Effect Transistor (FET) f 0 = Qs = Qs = 1 2π
More informationThree Terminal Devices
Three Terminal Devices - field effect transistor (FET) - bipolar junction transistor (BJT) - foundation on which modern electronics is built - active devices - devices described completely by considering
More informationHomework Assignment 10
Homework Assignment 10 Question 1 (Short Takes) Two points each unless otherwise indicated. 1. What is the 3-dB bandwidth of the amplifier shown below if r π = 2.5K, r o = 100K, g m = 40 ms, and C L =
More informationWell we know that the battery Vcc must be 9V, so that is taken care of.
HW 4 For the following problems assume a 9Volt battery available. 1. (50 points, BJT CE design) a) Design a common emitter amplifier using a 2N3904 transistor for a voltage gain of Av=-10 with the collector
More informationLecture 14. Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1
Lecture 14 Field Effect Transistor (FET) Sunday 26/11/2017 FET 1-1 Outline Introduction to FET transistors Types of FET Transistors Junction Field Effect Transistor (JFET) Characteristics Construction
More informationEE105 Fall 2015 Microelectronic Devices and Circuits
EE105 Fall 2015 Microelectronic Devices and Circuits Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 11-1 Transistor Operating Mode in Amplifiers Transistors are biased in flat part of
More informationAssist Lecturer: Marwa Maki. Active Filters
Active Filters In past lecture we noticed that the main disadvantage of Passive Filters is that the amplitude of the output signals is less than that of the input signals, i.e., the gain is never greater
More informationMOSFET Amplifier Design
MOSFET Amplifier Design Introduction In this lab, you will design a basic 2-stage amplifier using the same 4007 chip as in lab 2. As a reminder, the PSpice model parameters are: NMOS: LEVEL=1, VTO=1.4,
More informationField Effect Transistor (FET) FET 1-1
Field Effect Transistor (FET) FET 1-1 Outline MOSFET transistors ntroduction to MOSFET MOSFET Types epletion-type MOSFET Characteristics Biasing Circuits and Examples Comparison between JFET and epletion-type
More informationCHAPTER 8 FIELD EFFECT TRANSISTOR (FETs)
CHAPTER 8 FIELD EFFECT TRANSISTOR (FETs) INTRODUCTION - FETs are voltage controlled devices as opposed to BJT which are current controlled. - There are two types of FETs. o Junction FET (JFET) o Metal
More informationAmplifiers Frequency Response Examples
ECE 5/45 Analog IC Design We will use the following MOSFET parameters for hand-calculations and the µm CMOS models for corresponding simulations. Table : Long-channel MOSFET parameters. Parameter NMOS
More informationd. Can you find intrinsic gain more easily by examining the equation for current? Explain.
EECS140 Final Spring 2017 Name SID 1. [8] In a vacuum tube, the plate (or anode) current is a function of the plate voltage (output) and the grid voltage (input). I P = k(v P + µv G ) 3/2 where µ is a
More informationMEASUREMENT AND INSTRUMENTATION STUDY NOTES UNIT-I
MEASUREMENT AND INSTRUMENTATION STUDY NOTES The MOSFET The MOSFET Metal Oxide FET UNIT-I As well as the Junction Field Effect Transistor (JFET), there is another type of Field Effect Transistor available
More informationLecture 16. MOSFET (cont d) Sunday 3/12/2017 MOSFET 1-1
Lecture 16 MOSFET (cont d) Sunday 3/1/017 MOSFET 1-1 Outline Continue Enhancement-type MOSFET Characteristics C Biasing Circuits and Examples ntroduction to BJT-FET Combination Circuits Combination of
More informationECE 310L : LAB 9. Fall 2012 (Hay)
ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately
More informationECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers
ECEN 474/704 Lab 5: Frequency Response of Inverting Amplifiers Objective Design, simulate and layout various inverting amplifiers. Introduction Inverting amplifiers are fundamental building blocks of electronic
More informationField - Effect Transistor
Page 1 of 6 Field - Effect Transistor Aim :- To draw and study the out put and transfer characteristics of the given FET and to determine its parameters. Apparatus :- FET, two variable power supplies,
More informationEIE209 Basic Electronics. Transistor Devices. Contents BJT and FET Characteristics Operations. Prof. C.K. Tse: T ransistor devices
EIE209 Basic Electronics Transistor Devices Contents BJT and FET Characteristics Operations 1 What is a transistor? Three-terminal device whose voltage-current relationship is controlled by a third voltage
More informationDifference between BJTs and FETs. Junction Field Effect Transistors (JFET)
Difference between BJTs and FETs Transistors can be categorized according to their structure, and two of the more commonly known transistor structures, are the BJT and FET. The comparison between BJTs
More informationHomework Assignment 03
Homework Assignment 03 Question 1 (Short Takes), 2 points each unless otherwise noted. 1. Two 0.68 μf capacitors are connected in series across a 10 khz sine wave signal source. The total capacitive reactance
More informationUNIT I - TRANSISTOR BIAS STABILITY
UNIT I - TRANSISTOR BIAS STABILITY OBJECTIVE On the completion of this unit the student will understand NEED OF BIASING CONCEPTS OF LOAD LINE Q-POINT AND ITS STABILIZATION AND COMPENSATION DIFFERENT TYPES
More information6. Field-Effect Transistor
6. Outline: Introduction to three types of FET: JFET MOSFET & CMOS MESFET Constructions, Characteristics & Transfer curves of: JFET & MOSFET Introduction The field-effect transistor (FET) is a threeterminal
More informationPhysics 364, Fall 2012, reading due your answers to by 11pm on Thursday
Physics 364, Fall 2012, reading due 2012-10-25. Email your answers to ashmansk@hep.upenn.edu by 11pm on Thursday Course materials and schedule are at http://positron.hep.upenn.edu/p364 Assignment: (a)
More informationChapter 8: Field Effect Transistors
Chapter 8: Field Effect Transistors Transistors are different from the basic electronic elements in that they have three terminals. Consequently, we need more parameters to describe their behavior than
More informationField Effect Transistors (FET s) University of Connecticut 136
Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction
More informationGechstudentszone.wordpress.com
UNIT 4: Small Signal Analysis of Amplifiers 4.1 Basic FET Amplifiers In the last chapter, we described the operation of the FET, in particular the MOSFET, and analyzed and designed the dc response of circuits
More informationKOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS
KOM2751 Analog Electronics :: Dr. Muharrem Mercimek :: YTU - Control and Automation Dept. 1 6 FIELD-EFFECT TRANSISTORS Most of the content is from the textbook: Electronic devices and circuit theory, Robert
More informationDIGITAL VLSI LAB ASSIGNMENT 1
DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use
More informationPHYSICS 330 LAB Operational Amplifier Frequency Response
PHYSICS 330 LAB Operational Amplifier Frequency Response Objectives: To measure and plot the frequency response of an operational amplifier circuit. History: Operational amplifiers are among the most widely
More informationCommon-source Amplifiers
Lab 1: Common-source Amplifiers Introduction The common-source amplifier is one of the basic amplifiers in CMOS analog circuits. Because of its very high input impedance, relatively high gain, low noise,
More informationChapter 6: Field-Effect Transistors
Chapter 6: Field-Effect Transistors FETs vs. BJTs Similarities: Amplifiers Switching devices Impedance matching circuits Differences: FETs are voltage controlled devices. BJTs are current controlled devices.
More informationChapter 6. BJT Amplifiers
Basic Electronic Devices and Circuits EE 111 Electrical Engineering Majmaah University 2 nd Semester 1432/1433 H Chapter 6 BJT Amplifiers 1 Introduction The things you learned about biasing a transistor
More informationYou will be asked to make the following statement and provide your signature on the top of your solutions.
1 EE 435 Name Exam 1 Spring 216 Instructions: The points allocated to each problem are as indicated. Note that the first and last problem are weighted more heavily than the rest of the problems. On those
More informationExperiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS
Experiment No. 9 DESIGN AND CHARACTERISTICS OF COMMON BASE AND COMMON COLLECTOR AMPLIFIERS 1. Objective: The objective of this experiment is to explore the basic applications of the bipolar junction transistor
More information4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET)
4.2.2 Metal Oxide Semiconductor Field Effect Transistor (MOSFET) The Metal Oxide Semitonductor Field Effect Transistor (MOSFET) has two modes of operation, the depletion mode, and the enhancement mode.
More information