Lab 5: MOSFET I-V Characteristics

Size: px
Start display at page:

Download "Lab 5: MOSFET I-V Characteristics"

Transcription

1 1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect of the Source-Body voltage on the threshold voltage of a MOSFET. The Analog Discovery Kit will be used the main equipment in this experiment. 2. Health and Safety Any laboratory environment may contain conditions that are potentially hazardous to a person s health if not handled appropriately. The Electrical Engineering laboratories obviously have electrical potentials that may be lethal and must be treated with respect. In addition, there are also mechanical hazards, particularly when dealing with rotating machines, and chemical hazards because of the materials used in various components. Our LEARNING OUTCOME is to educate all laboratory users to be able to handle laboratory materials and situations safely and thereby ensure a safe and healthy experience for all. Watch for posted information in and around the laboratories, and on the class web site. 3. Lab Report Students work in groups of 2 with laboratories being on alternative week (in 2C80/82). Each student must have a lab book for the labs. The lab book is used for lab preparation, notes, record, and lab reports. The lab books must be handed before 5:00 pm on the due date (same day of the following week) into the box labeled for your section across from 2C94. The lab books are marked and returned before the next lab. 4. Background The MOSFET is actually a four-terminal device, whose substrate, or body, terminal must be always held at one of the extreme voltage in the circuit, either the most positive for the PMOS or the most negative for the NMOS. One unique property of the MOSFET is that the gate draws no measurable current. Another is that either polarity of voltage maybe applied to the gate without causing damage to the transistor. Although enhancement-mode MOSFETs respond to only one polarity, the students need not fear the consequences of using the opposite polarity. A MOSFET with its gate and drain connected together always operates in the constant-current region. Its I D to V GS relationship is: ( ) I = K V V (1) D GS TR where the threshold voltage depends on the source-body potential V SB as: VTR = VTR 0 ± γ 2φF + VSB 2φ F (2) 0.5 Using the typical values γ = 0.4 V and φ F = 0.3 V gives the following values for the change in threshold voltage of an nmos transistor. Rev B Copyright 2015 University of Saskatchewan Page 1 of 14

2 V SB (V) V TR-V TR Material and Equipment Material (supplied by department) MIC94050 P-Channel MOSFET Resistor: 560 Ω IRFD110 N-Channel MOSFET Equipment (supplied by student) Analog Discovery Module Waveforms software Breadboard and wiring kit Rev B Copyright 2015 University of Saskatchewan Page 2 of 14

3 6. Prelab 1. Download the datasheet for a MIC94050 from " What is the Gate Threshold Voltage? 1.2. What is the value of I D with V DS = 2 V and V GS = 2 V? 2. Download the datasheet for an IRFD110 from " What is the Gate Threshold Voltage? 2.2. What is the value of I D with V DS = 0.5 V and V GS = 4.5 V? 3. A SPICE circuit file for the MIC94050 circuit (Figure 7-1) is given in Figure 6-1. Using LTspice (a guide to using LTspice can be found in Laboratory #1 Appendix A), include a screen capture of the plot of the I D versus V GS characteristic in your lab report The horizontal axis should be set to "V(gs)". To set the horizontal axis, mouse over any of the numbers listed in the horizontal axis and "click" to bring up the "Horizontal Axis" dialog The vertical axis should be set to "Id(M1)" (using "Plot Settings Add Trace") The plot should look similar to Figure 6-2. P-Channel MOSFET I_d versus V_gs for varying V_sb ** Circuit Description ** M1 gs gs 0 body PMOSFET R1 gs vss 560 Vss vss 0 Vbb body 0 ; MOSFET D G S B ; 560 Ohm resistor ; Circuit source voltage ; Body voltage ** Analysis Requests **.DC Vss 0V -5V -100mV Vbb 0V 4V 1V ** Models **.MODEL PMOSFET PMOS (KP=0.4 VTO=-0.9 GAMMA=0.4 PHI=0.6 LAMBDA=0.5).end Figure 6-1: I D versus V GS (varying V SB) SPICE Circuit File Rev B Copyright 2015 University of Saskatchewan Page 3 of 14

4 Figure 6-2: Example SPICE Plot 4. A SPICE circuit file for the MIC94050 circuit (Figure 7-7) is given in Figure 6-3. Using LTspice, include a screen capture of the plot of the I D versus V GS characteristic in your lab report The horizontal axis should be set to "V(d)". To set the horizontal axis, mouse over any of the numbers listed in the horizontal axis and "click" to bring up the "Horizontal Axis" dialog The vertical axis should be set to "Id(M1)" (using "Plot Settings Add Trace") The plot should look similar to Figure 6-4. P-Channel MOSFET I_d versus V_ds for varying V_gs ** Circuit Description ** M1 d g 0 0 PMOSFET ; MOSFET D G S B R1 d vss 560 ; 560 Ohm resistor Vss vss 0 ; Circuit source voltage Vgg g 0 ; Gate voltage ** Analysis Requests **.DC Vss 0V -5V -100mV Vgg -0.8V ** Models **.MODEL PMOSFET PMOS (KP=0.4 VTO=-0.9 GAMMA=0.4 PHI=0.6 LAMBDA=0.5).end Figure 6-3: I D versus V DS (varying V GS) SPICE Circuit File Rev B Copyright 2015 University of Saskatchewan Page 4 of 14

5 Figure 6-4: Example SPICE Plot 5. The SPICE Model for an N-Channel MOSFET is shown in Figure 6-5. Create the SPICE Circuit File, and using LTspice, include a screen capture of the plot of the I D versus V GS characteristic in your lab report of the circuit in Figure MODEL NMOSFET NMOS (KP=0.05 VTO=2.7 LAMBDA=0.05) Figure 6-5: N-Channel MOSFET SPICE Model Rev B Copyright 2015 University of Saskatchewan Page 5 of 14

6 7. Lab Procedures Debugging (or What To Try When Things Aren't Working) There are a number of things/procedures you should use to debugging circuits when things are not working correctly. These include (but are not limited to): Check that all component pins are correctly inserted in the breadboard (sometimes they get bent underneath a component). Make sure that components are not "misaligned" in the breadboard (e.g. off by one row). Double check component values (you can measure resistors, capacitors, and inductors). Try a different section in the breadboard (in case there is a bad internal connection). Measure the source voltages to verify power input. Measure key points in the circuit for proper voltage/waveform (i.e. divide-and-conquer). Threshold Voltage Change Due to Source-To-Body (Substrate) Voltage This experiment is to verify the effect of the voltage difference between the body (bulk) and the source on the threshold voltage as shown in the text book (equation 5.30, 7th edition, equation 5.107, 6th edition). 1. Construct the circuit shown in Figure 7-1 on your breadboard: 1.1. The "pin out" for a MIC94050 p-channel MOSFET is shown in Figure 7-2. The MIC94050 is a "surface mount" component and so must be attached to a daughter board to be usable in a breadboard. There are two different types of daughter boards as shown in the figure. The "Black Mark" on the second one indicates the B (Body/Substrate) connection. MIC94050 G S B (Substate) To AWG2 D R D 560 Ω To AWG1 Figure 7-1: I D versus V GS Circuit 2. Set Arbitrary Waveform Generator AWG1 to a 100 Hz Triangle wave, Amplitude = 2.5 V, Offset = -2.5 V, Phase = 90 degrees (should go from 0 V to -5 V). Rev B Copyright 2015 University of Saskatchewan Page 6 of 14

7 B (Body) D B Black Mark G S B D G S Figure 7-2: MIC94050 Pin Outs 3. Set Arbitrary Waveform Generator AWG2 to 5 steps from 0 V to 4 V (in 1 V steps) in 1 second: 3.1. Create a text file with the numbers 1, 2,, 5, one on each line (make sure to have a blank line after the last number) Select the "Custom" waveform type Then select "File" and "Browse" to the text file you created. "Open" to create the step waveform Set Frequency = 1 Hz, Amplitude = 2 V, and Offset = 2 V Set "Mode" to "Auto sync" which synchronizes AWG1 and AWG The AWG settings screen should look similar to Figure 7-3. Note how AWG1 (the voltage across the resistor and MOSFET) varies from 0 V to -5 V and then back to 0 V for each voltage step in AWG2 (Vsb) Click "Run All" to start both AWGs. 4. Connect Channel 1 to measure V GS (i.e. 1+ on "G" and 1- on "S"). 5. Connect Channel 2 to measure the voltage across Resistor R D. We will use this voltage to determine the current I D into the MOSFET (i.e. 2+ on "AWG1" and 2- on "D"). 6. Use the ADM Oscilloscope to show the I D versus V GS: 6.1. Add Math 1 to calculate I D (i.e. "C2 / 560"). Change the units of Math 1 to "A" and set the Range to something appropriate (e.g. 1 ma/div) Turn off the display of Channel 2 and adjust the Time and Channel parameters to provide a good view of Channel 1 and Math 1. Set the "Source" to "AWG 2" and if you select the "Single" capture, you should see something similar to Figure Use "Add XY" to display the I D versus V GS graph (X = Channel 1 and Y = Math 1) Further adjust the parameters for Channel 1 and Math 1 to provide a good view of the I D versus V GS graph (similar to Figure 7-5) Obtain a screen capture/print out of the I D versus V GS graph and label the values of V SB on each curve. Rev B Copyright 2015 University of Saskatchewan Page 7 of 14

8 Figure 7-3: AWG Settings Figure 7-4: Oscilloscope Window Rev B Copyright 2015 University of Saskatchewan Page 8 of 14

9 Figure 7-5: I D versus V GS (multiple V SB) 6.6. Export the data from the "Main Time" window (see Figure 7-6). Use your favourite software to plot the linear region of II DD versus VV GGGG for each different value of VV SSSS. The slope of each curve is KK. Determine the value of KK in mmmm VV 2. Extrapolate each curve to II DD=0 to give the threshold voltage, VV TTTT. Using your measurements, find VV TTTT0 (i.e. threshold voltage when VV SSSS = 0 VV). Figure 7-6: Export Data Rev B Copyright 2015 University of Saskatchewan Page 9 of 14

10 P-Channel MOSFET I-V Characteristics 1. Construct the circuit shown in Figure 7-7 on your breadboard: 1.1. The "pin out" for a MIC94050 p-channel MOSFET is shown in Figure 7-2. To AWG2 MIC94050 G S B (Substate) D R D 560 Ω To AWG1 Figure 7-7: I D versus V DS Circuit 2. Set Arbitrary Waveform Generator AWG1 to a 100 Hz Triangle wave, Amplitude = 2.5 V, Offset = -2.5 V, Phase = 90 degrees (should go from 0 V to -5 V). 3. Set Arbitrary Waveform Generator AWG2 to 10 steps from -0.8 V to -1.1 V in 0.1 second: 3.1. Create a text file with the numbers 1, 2,, 10, one on each line (make sure to have a blank line after the last number) Select the "Custom" waveform type Then select "File" and "Browse" to the text file you created. "Open" to create the step waveform Set Frequency = 10 Hz, Amplitude = 150 mv, and Offset = -950 mv Set "Mode" to "Auto sync" which synchronizes AWG1 and AWG The AWG settings screen should look similar to Figure 7-8. Note how AWG1 (the voltage across the resistor and MOSFET) varies from 0 V to -5 V and then back to 0 V for each voltage step in AWG2 (V GS) Click "Run All" to start both AWGs. 4. Connect Channel 1 to measure V DS (i.e. 1+ on "D" and 1- on "S"). 5. Connect Channel 2 to measure the voltage across Resistor R D. We will use this voltage to determine the current I D into the MOSFET (i.e. 2+ on "AWG1" and 2- on "D"). 6. Use the ADM Oscilloscope to show the I D versus V GS: 6.1. Add Math 1 to calculate I D (i.e. "C2 / 560"). Change the units of Math 1 to "A" and set the Range to something appropriate (e.g. 1 ma/div). Rev B Copyright 2015 University of Saskatchewan Page 10 of 14

11 Figure 7-8: AWG Settings 6.2. Turn off the display of Channel 2 and adjust the Time and Channel parameters to provide a good view of Channel 1 and Math 1. Set the "Source" to "AWG 2" and if you select the "Single" capture, you should see something similar to Figure Use "Add XY" to display the I D versus V DS graph (X = Channel 1 and Y = Math 1) Further adjust the parameters for Channel 1 and Math 1 to provide a good view of the I D versus V DS graph (similar to Figure 7-10) REQUIRED: Demonstrate the Oscilloscope Window from 6.2 and the I D versus V DS graph from 6.4 to a lab instructor and make sure your demonstration is recorded by the lab instructor. 7. Obtain a screen capture/print out of the I D versus V DS graph and label the values of V GS on each curve. 8. Determine the average power dissipated in the transistor: 8.1. Add Math 2 to display the power in the transistor, PP = VV DDDD II DD (i.e. ( C2 / 560 ) * C1 ) Add a Measurement for the Average of Math 2. Rev B Copyright 2015 University of Saskatchewan Page 11 of 14

12 Figure 7-9: Oscilloscope Window Figure 7-10: I D versus V DS Rev B Copyright 2015 University of Saskatchewan Page 12 of 14

13 N-Channel MOSFET I-V Characteristics 1. Construct the circuit shown Figure 7-11 on your breadboard: 1.1. The "pin out" for an IRFD110 N-Channel MOSFET is shown in Figure To AWG1 R D 560 Ω To AWG2 G D S IRFD110 Figure 7-11: I D versus V DS Circuit Figure 7-12: IRFD110 Pin Out 2. Set Arbitrary Waveform Generator AWG1 to a 100 Hz Triangle wave, Amplitude = 2.5 V, Offset = 2.5 V, Phase = 270 degrees (should go from 0 V to +5 V). 3. Set Arbitrary Waveform Generator AWG2 to 10 steps from 2.7 V to 3.2 V in 0.1 second: 3.1. Create a text file with the numbers 1, 2,, 10, one on each line (make sure to have a blank line after the last number) Select the "Custom" waveform type Then select "File" and "Browse" to the text file you created. "Open" to create the step waveform Set Frequency = 10 Hz, Amplitude = 250 mv, and Offset = 2.95 V Set "Mode" to "Auto sync" which synchronizes AWG1 and AWG2. Rev B Copyright 2015 University of Saskatchewan Page 13 of 14

14 3.6. The AWG settings screen should look similar to Figure Note how AWG1 (the voltage across the resistor and MOSFET) varies from 0 V to +5 V and then back to 0 V for each voltage step in AWG2 (V GS) Click "Run All" to start both AWGs. Figure 7-13: AWG Settings 4. Connect Channel 1 to measure V DS (i.e. 1+ on "D" and 1- on "S"). 5. Connect Channel 2 to measure the voltage across Resistor R D. We will use this voltage to determine the current I D into the MOSFET (i.e. 2+ on "AWG1" and 2- on "D"). 6. Use the ADM Oscilloscope to show the I D versus V GS: 6.1. Add Math 1 to calculate I D (i.e. "C2 / 560"). Change the units of Math 1 to "A" and set the Range to something appropriate (e.g. 1 ma/div) Turn off the display of Channel 2 and adjust the Time and Channel parameters to provide a good view of Channel 1 and Math 1. Set the "Source" to "AWG 2" and if you select the "Single" capture Use "Add XY" to display the I D versus V DS graph (X = Channel 1 and Y = Math 1) Further adjust the parameters for Channel 1 and Math 1 to provide a good view of the I D versus V DS graph REQUIRED: Demonstrate the Oscilloscope Window from 6.2 and the I D versus V DS graph from 6.4 to a lab instructor and make sure your demonstration is recorded by the lab instructor Obtain a screen capture/print out of the I D versus V DS graph and label the values of V GS on each curve. Rev B Copyright 2015 University of Saskatchewan Page 14 of 14

Lab 5: MOSFET I-V Characteristics

Lab 5: MOSFET I-V Characteristics 1. Learning Outcomes Lab 5: MOSFET I-V Characteristics In this lab, students will determine the MOSFET I-V characteristics of both a P-Channel MOSFET and an N- Channel MOSFET. Also examined is the effect

More information

Lab 6: MOSFET AMPLIFIER

Lab 6: MOSFET AMPLIFIER Lab 6: MOSFET AMPLIFIER NOTE: This is a "take home" lab. You are expected to do the lab on your own time (still working with your lab partner) and then submit your lab reports. Lab instructors will be

More information

Lab 3: BJT I-V Characteristics

Lab 3: BJT I-V Characteristics 1. Learning Outcomes Lab 3: BJT I-V Characteristics At the end of this lab, students should know how to theoretically determine the I-V (Current-Voltage) characteristics of both NPN and PNP Bipolar Junction

More information

Lab 2: Diode Characteristics and Diode Circuits

Lab 2: Diode Characteristics and Diode Circuits 1. Learning Outcomes Lab 2: Diode Characteristics and Diode Circuits At the end of this lab, the students should be able to compare the experimental data to the theoretical curve of the diodes. The students

More information

Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits

Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits 1. Learning Outcomes In this lab, the students evaluate characteristics of the non-ideal operational amplifiers. Students use a simulation tool

More information

Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits

Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits Lab 1: Non-Ideal Operational Amplifier and Op-Amp Circuits 1. Learning Outcomes In this lab, the students evaluate characteristics of the non-ideal operational amplifiers. Students use a simulation tool

More information

Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer

Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer Curve Tracer Laboratory Assistant Using the Analog Discovery Module as A Curve Tracer The objective of this lab is to become familiar with methods to measure the dc current-voltage (IV) behavior of diodes

More information

EE 230 Lab Lab 9. Prior to Lab

EE 230 Lab Lab 9. Prior to Lab MOS transistor characteristics This week we look at some MOS transistor characteristics and circuits. Most of the measurements will be done with our usual lab equipment, but we will also use the parameter

More information

LAB 4 : FET AMPLIFIERS

LAB 4 : FET AMPLIFIERS LEARNING OUTCOME: LAB 4 : FET AMPLIFIERS In this lab, students design and implement single-stage FET amplifiers and explore the frequency response of the real amplifiers. Breadboard and the Analog Discovery

More information

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration)

ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) Revised 2/16/2007 ENEE 307 Laboratory#2 (n-mosfet, p-mosfet, and a single n-mosfet amplifier in the common source configuration) *NOTE: The text mentioned below refers to the Sedra/Smith, 5th edition.

More information

Common-Source Amplifiers

Common-Source Amplifiers Lab 2: Common-Source Amplifiers Introduction The common-source stage is the most basic amplifier stage encountered in CMOS analog circuits. Because of its very high input impedance, moderate-to-high gain,

More information

EE 2274 MOSFET BASICS

EE 2274 MOSFET BASICS Pre Lab: Include your CN with prelab. EE 2274 MOSFET BASICS 1. Simulate in LTspice a family of output characteristic curves (cutve tracer) for the 2N7000 NMOS You will need to add the 2N7000 model to LTspice

More information

Common-source Amplifiers

Common-source Amplifiers Lab 1: Common-source Amplifiers Introduction The common-source amplifier is one of the basic amplifiers in CMOS analog circuits. Because of its very high input impedance, relatively high gain, low noise,

More information

University of Pittsburgh

University of Pittsburgh University of Pittsburgh Experiment #4 Lab Report MOSFET Amplifiers and Current Mirrors Submission Date: 07/03/2018 Instructors: Dr. Ahmed Dallal Shangqian Gao Submitted By: Nick Haver & Alex Williams

More information

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017

EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 EE 330 Laboratory 7 MOSFET Device Experimental Characterization and Basic Applications Spring 2017 Objective: The objective of this laboratory experiment is to become more familiar with the operation of

More information

8. Characteristics of Field Effect Transistor (MOSFET)

8. Characteristics of Field Effect Transistor (MOSFET) 1 8. Characteristics of Field Effect Transistor (MOSFET) 8.1. Objectives The purpose of this experiment is to measure input and output characteristics of n-channel and p- channel field effect transistors

More information

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH)

EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu 511 Sutardja Dai Hall (SDH) EE105 Fall 2015 Microelectronic Devices and Circuits: MOSFET Prof. Ming C. Wu wu@eecs.berkeley.edu 511 Sutardja Dai Hall (SDH) 7-1 Simplest Model of MOSFET (from EE16B) 7-2 CMOS Inverter 7-3 CMOS NAND

More information

EE320L Electronics I. Laboratory. Laboratory Exercise #6. Current-Voltage Characteristics of Electronic Devices. Angsuman Roy

EE320L Electronics I. Laboratory. Laboratory Exercise #6. Current-Voltage Characteristics of Electronic Devices. Angsuman Roy EE320L Electronics I Laboratory Laboratory Exercise #6 Current-Voltage Characteristics of Electronic Devices By Angsuman Roy Department of Electrical and Computer Engineering University of Nevada, Las

More information

LABORATORY 3 v1 CIRCUIT ELEMENTS

LABORATORY 3 v1 CIRCUIT ELEMENTS University of California Berkeley Department of Electrical Engineering and Computer Sciences EECS 100, Professor Bernhard Boser LABORATORY 3 v1 CIRCUIT ELEMENTS The purpose of this laboratory is to familiarize

More information

ELEC 350L Electronics I Laboratory Fall 2012

ELEC 350L Electronics I Laboratory Fall 2012 ELEC 350L Electronics I Laboratory Fall 2012 Lab #9: NMOS and CMOS Inverter Circuits Introduction The inverter, or NOT gate, is the fundamental building block of most digital devices. The circuits used

More information

LABORATORY 3 v3 CIRCUIT ELEMENTS

LABORATORY 3 v3 CIRCUIT ELEMENTS University of California Berkeley Department of Electrical Engineering and Computer Sciences EECS 100, Professor Leon Chua LABORATORY 3 v3 CIRCUIT ELEMENTS The purpose of this laboratory is to familiarize

More information

ECE 310L : LAB 9. Fall 2012 (Hay)

ECE 310L : LAB 9. Fall 2012 (Hay) ECE 310L : LAB 9 PRELAB ASSIGNMENT: Read the lab assignment in its entirety. 1. For the circuit shown in Figure 3, compute a value for R1 that will result in a 1N5230B zener diode current of approximately

More information

Class #8: Experiment Diodes Part I

Class #8: Experiment Diodes Part I Class #8: Experiment Diodes Part I Purpose: The objective of this experiment is to become familiar with the properties and uses of diodes. We used a 1N914 diode in two previous experiments, but now we

More information

ECE 2274 MOSFET Voltmeter. Richard Cooper

ECE 2274 MOSFET Voltmeter. Richard Cooper ECE 2274 MOSFET Voltmeter Richard Cooper Pre-Lab for MOSFET Voltmeter Voltmeter design: Build a MOSFET (2N7000) voltmeter in LTspice. The MOSFETs in the voltmeter act as switches. To turn on the MOSFET.

More information

Class #9: Experiment Diodes Part II: LEDs

Class #9: Experiment Diodes Part II: LEDs Class #9: Experiment Diodes Part II: LEDs Purpose: The objective of this experiment is to become familiar with the properties and uses of LEDs, particularly as a communication device. This is a continuation

More information

Digital Applications of the Operational Amplifier

Digital Applications of the Operational Amplifier Lab Procedure 1. Objective This project will show the versatile operation of an operational amplifier in a voltage comparator (Schmitt Trigger) circuit and a sample and hold circuit. 2. Components Qty

More information

EECS 312: Digital Integrated Circuits Lab Project 2 Extracting Electrical and Physical Parameters from MOSFETs. Teacher: Robert Dick GSI: Shengshuo Lu

EECS 312: Digital Integrated Circuits Lab Project 2 Extracting Electrical and Physical Parameters from MOSFETs. Teacher: Robert Dick GSI: Shengshuo Lu EECS 312: Digital Integrated Circuits Lab Project 2 Extracting Electrical and Physical Parameters from MOSFETs Teacher: Robert Dick GSI: Shengshuo Lu Due 3 October 1 Introduction In this lab project, we

More information

ECE4902 C2012 Lab 3. Qualitative MOSFET V-I Characteristic SPICE Parameter Extraction using MOSFET Current Mirror

ECE4902 C2012 Lab 3. Qualitative MOSFET V-I Characteristic SPICE Parameter Extraction using MOSFET Current Mirror ECE4902 C2012 Lab 3 Qualitative MOSFET VI Characteristic SPICE Parameter Extraction using MOSFET Current Mirror The purpose of this lab is for you to make both qualitative observations and quantitative

More information

Homework Assignment 09

Homework Assignment 09 Question 1 (2 points each unless noted otherwise) Homework Assignment 09 1. For SPICE, Explain very briefly the difference between the multiplier M and Meg, as in a resistor has value 2M versus a resistor

More information

Real Analog - Circuits 1 Chapter 1: Lab Projects

Real Analog - Circuits 1 Chapter 1: Lab Projects Real Analog - Circuits 1 Chapter 1: Lab Projects 1.2.2: Dependent Sources and MOSFETs Overview: In this lab assignment, a qualitative discussion of dependent sources is presented in the context of MOSFETs

More information

Lab Project EE348L. Spring 2005

Lab Project EE348L. Spring 2005 Lab Project EE348L Spring 2005 B. Madhavan Spring 2005 B. Madhavan Page 1 of 7 EE348L, Spring 2005 1 Lab Project 1.1 Introduction Based on your understanding of band pass filters and single transistor

More information

DIGITAL VLSI LAB ASSIGNMENT 1

DIGITAL VLSI LAB ASSIGNMENT 1 DIGITAL VLSI LAB ASSIGNMENT 1 Problem 1: NMOS and PMOS plots using Cadence. In this exercise, you are required to generate both NMOS and PMOS I-V device characteristics (I/P and O/P) using Cadence (Use

More information

ELEC 2210 EXPERIMENT 12 NMOS Logic

ELEC 2210 EXPERIMENT 12 NMOS Logic ELEC 2210 EXPERIMENT 12 NMOS Logic Objectives: The experiments in this laboratory exercise will provide an introduction to NMOS logic. You will use the Bit Bucket breadboarding system to build and test

More information

EE4902 C Lab 7

EE4902 C Lab 7 EE4902 C2007 - Lab 7 MOSFET Differential Amplifier Resistive Load Active Load PURPOSE: The primary purpose of this lab is to measure the performance of the differential amplifier. This is an important

More information

OCR Electronics for A2 MOSFETs Variable resistors

OCR Electronics for A2 MOSFETs Variable resistors Resistance characteristic You are going to find out how the drain-source resistance R d of a MOSFET depends on its gate-source voltage V gs when the drain-source voltage V ds is very small. 1 Assemble

More information

ET 304A Laboratory Tutorial-Circuitmaker For Transient and Frequency Analysis

ET 304A Laboratory Tutorial-Circuitmaker For Transient and Frequency Analysis ET 304A Laboratory Tutorial-Circuitmaker For Transient and Frequency Analysis All circuit simulation packages that use the Pspice engine allow users to do complex analysis that were once impossible to

More information

Lab 3: Circuit Simulation with PSPICE

Lab 3: Circuit Simulation with PSPICE Page 1 of 11 Laboratory Goals Introduce text-based PSPICE as a design tool Create transistor circuits using PSPICE Simulate output response for the designed circuits Introduce the Curve Tracer functionality.

More information

ELEC 2210 EXPERIMENT 8 MOSFETs

ELEC 2210 EXPERIMENT 8 MOSFETs ELEC 10 EXPERIMENT 8 MOSFETs Objectives: The experiments in this laboratory exercise will provide an introduction to the MOSFET. You will use the Bit Bucket breadboarding system to build and test several

More information

Introduction to Lab Equipment and Components

Introduction to Lab Equipment and Components 331: nalog lectronics University of Toronto 2017 Lab 0: ntroduction to Lab quipment and omponents ntroduction The first part of this lab introduces you to the lab equipment and components you will use

More information

EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits

EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits EE311: Electrical Engineering Junior Lab, Fall 2006 Experiment 4: Basic MOSFET Characteristics and Analog Circuits Objective This experiment is designed for students to get familiar with the basic properties

More information

EK 307 Lab: Light-Emitting Diodes. In-lab Assignment (Complete Level 1 and additionally level 2 if you choose to):

EK 307 Lab: Light-Emitting Diodes. In-lab Assignment (Complete Level 1 and additionally level 2 if you choose to): EK 307 Lab: Light-Emitting Diodes Laboratory Goal: To explore the characteristics of the light emitting diode. Learning Objectives: Voltage, Current, Power, and Instrumentation. Suggested Tools: Voltage

More information

ECE2274 Pre-Lab for MOSFET logic LTspice NAND Gate, NOR Gate, and CMOS Inverter

ECE2274 Pre-Lab for MOSFET logic LTspice NAND Gate, NOR Gate, and CMOS Inverter ECE2274 Pre-Lab for MOFET logic LTspice NAN ate, NOR ate, and CMO Inverter 1. NMO NAN ate Use Vdd = 9.. For the NMO NAN gate shown below gate, using the 2N7000 MOFET LTspice model such that Vto = 2.0.

More information

MOSFET Amplifier Design

MOSFET Amplifier Design MOSFET Amplifier Design Introduction In this lab, you will design a basic 2-stage amplifier using the same 4007 chip as in lab 2. As a reminder, the PSpice model parameters are: NMOS: LEVEL=1, VTO=1.4,

More information

Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers

Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB Amplifiers SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #6: Biasing an NPN BJT Introduction to CE, CC, and CB

More information

EK 307 Lab: Light-Emitting Diodes

EK 307 Lab: Light-Emitting Diodes EK 307 Lab: Light-Emitting Diodes Laboratory Goal: To explore the characteristics of the light emitting diode. Learning Objectives: Voltage, current, power, and instrumentation. Suggested Tools: Voltage

More information

CHAPTER 6. Motor Driver

CHAPTER 6. Motor Driver CHAPTER 6 Motor Driver In this lab, we will construct the circuitry that your robot uses to drive its motors. However, before testing the motor circuit we will begin by making sure that you are able to

More information

Experiment 5 Single-Stage MOS Amplifiers

Experiment 5 Single-Stage MOS Amplifiers Experiment 5 Single-Stage MOS Amplifiers B. Cagdaser, H. Chong, R. Lu, and R. T. Howe UC Berkeley EE 105 Fall 2005 1 Objective This is the first lab dealing with the use of transistors in amplifiers. We

More information

Integrators, differentiators, and simple filters

Integrators, differentiators, and simple filters BEE 233 Laboratory-4 Integrators, differentiators, and simple filters 1. Objectives Analyze and measure characteristics of circuits built with opamps. Design and test circuits with opamps. Plot gain vs.

More information

Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section

Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Laboratory 1 Single-Stage MOSFET Amplifier Analysis and Design Due Date: Week of February 20, 2014, at the beginning of your lab section Objective To analyze and design single-stage common source amplifiers.

More information

Time-Varying Signals

Time-Varying Signals Time-Varying Signals Objective This lab gives a practical introduction to signals that varies with time using the components such as: 1. Arbitrary Function Generator 2. Oscilloscopes The grounding issues

More information

Class #7: Experiment L & C Circuits: Filters and Energy Revisited

Class #7: Experiment L & C Circuits: Filters and Energy Revisited Class #7: Experiment L & C Circuits: Filters and Energy Revisited In this experiment you will revisit the voltage oscillations of a simple LC circuit. Then you will address circuits made by combining resistors

More information

Field Effect Transistors (FET s) University of Connecticut 136

Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) University of Connecticut 136 Field Effect Transistors (FET s) FET s are classified three ways: by conduction type n-channel - conduction by electrons p-channel - conduction

More information

Fundamentos de Electrónica Lab Guide

Fundamentos de Electrónica Lab Guide Fundamentos de Electrónica Lab Guide Field Effect Transistor MOS-FET IST-2016/2017 2 nd Semester I-Introduction These are the objectives: a. n-type MOSFET characterization from the I(U) characteristics.

More information

Electronic CAD Practical work. Week 1: Introduction to transistor models. curve tracing of NMOS transfer characteristics

Electronic CAD Practical work. Week 1: Introduction to transistor models. curve tracing of NMOS transfer characteristics Electronic CAD Practical work Dr. Martin John Burbidge Lancashire UK Tel: +44 (0)1524 825064 Email: martin@mjb-rfelectronics-synthesis.com Martin Burbidge 2006 Week 1: Introduction to transistor models

More information

LABORATORY 4. Palomar College ENGR210 Spring 2017 ASSIGNED: 3/21/17

LABORATORY 4. Palomar College ENGR210 Spring 2017 ASSIGNED: 3/21/17 LABORATORY 4 ASSIGNED: 3/21/17 OBJECTIVE: The purpose of this lab is to evaluate the transient and steady-state circuit response of first order and second order circuits. MINIMUM EQUIPMENT LIST: You will

More information

Field Effect Transistor Characterization EE251 Laboratory Report #3 <name> May 26, 2008

Field Effect Transistor Characterization EE251 Laboratory Report #3 <name> May 26, 2008 Field Effect Transistor Characterization EE251 Laboratory Report #3 May 26, 2008 Abstract The low frequency characteristics of the 2N7000 N channel MOS Transistor were measured and compared to published

More information

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha

ECE520 VLSI Design. Lecture 2: Basic MOS Physics. Payman Zarkesh-Ha ECE520 VLSI Design Lecture 2: Basic MOS Physics Payman Zarkesh-Ha Office: ECE Bldg. 230B Office hours: Wednesday 2:00-3:00PM or by appointment E-mail: pzarkesh@unm.edu Slide: 1 Review of Last Lecture Semiconductor

More information

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and

Lecture 16: MOS Transistor models: Linear models, SPICE models. Context. In the last lecture, we discussed the MOS transistor, and Lecture 16: MOS Transistor models: Linear models, SPICE models Context In the last lecture, we discussed the MOS transistor, and added a correction due to the changing depletion region, called the body

More information

LABORATORY 5 v3 OPERATIONAL AMPLIFIER

LABORATORY 5 v3 OPERATIONAL AMPLIFIER University of California Berkeley Department of Electrical Engineering and Computer Sciences EECS 100, Professor Bernhard Boser LABORATORY 5 v3 OPERATIONAL AMPLIFIER Integrated operational amplifiers opamps

More information

E85: Digital Design and Computer Architecture

E85: Digital Design and Computer Architecture E85: Digital Design and Computer Architecture Lab 1: Electrical Characteristics of Logic Gates Objective The purpose of this lab is to become comfortable with logic gates as physical objects, to interpret

More information

EE320L Electronics I. Laboratory. Laboratory Exercise #2. Basic Op-Amp Circuits. Angsuman Roy. Department of Electrical and Computer Engineering

EE320L Electronics I. Laboratory. Laboratory Exercise #2. Basic Op-Amp Circuits. Angsuman Roy. Department of Electrical and Computer Engineering EE320L Electronics I Laboratory Laboratory Exercise #2 Basic Op-Amp Circuits By Angsuman Roy Department of Electrical and Computer Engineering University of Nevada, Las Vegas Objective: The purpose of

More information

ELEG 205 Analog Circuits Laboratory Manual Fall 2016

ELEG 205 Analog Circuits Laboratory Manual Fall 2016 ELEG 205 Analog Circuits Laboratory Manual Fall 2016 University of Delaware Dr. Mark Mirotznik Kaleb Burd Patrick Nicholson Aric Lu Kaeini Ekong 1 Table of Contents Lab 1: Intro 3 Lab 2: Resistive Circuits

More information

Class #6: Experiment The 555-Timer & Pulse Width Modulation

Class #6: Experiment The 555-Timer & Pulse Width Modulation Class #6: Experiment The 555-Timer & Pulse Width Modulation Purpose: In this experiment we look at the 555-timer, a device that uses digital devices and other electronic switching elements to generate

More information

1.2Vdc 1N4002. Anode V+

1.2Vdc 1N4002. Anode V+ ECE 2274 Pre-Lab for MOSFET Night Light and Voltmeter 1. Night Light The purpose of this part of experiment is to use the switching characteristics of the MOSFET to design a Night Light using a LED, MOSFET,

More information

On-Line Students Analog Discovery 2: Arbitrary Waveform Generator (AWG). Two channel oscilloscope

On-Line Students Analog Discovery 2: Arbitrary Waveform Generator (AWG). Two channel oscilloscope EET 150 Introduction to EET Lab Activity 5 Oscilloscope Introduction Required Parts, Software and Equipment Parts Figure 1, Figure 2, Figure 3 Component /Value Quantity Resistor 10 kω, ¼ Watt, 5% Tolerance

More information

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering

UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering UNIVERSITY OF NORTH CAROLINA AT CHARLOTTE Department of Electrical and Computer Engineering EXPERIMENT 8 MOSFET AMPLIFIER CONFIGURATIONS AND INPUT/OUTPUT IMPEDANCE OBJECTIVES The purpose of this experiment

More information

EE351 Laboratory Exercise 4 Field Effect Transistors

EE351 Laboratory Exercise 4 Field Effect Transistors Oct. 28, 2007, rev. July 26, 2009 Introduction The purpose of this laboratory exercise is for students to gain experience making measurements on Junction (JFET) to confirm mathematical models and to gain

More information

University of Portland EE 271 Electrical Circuits Laboratory. Experiment: Inductors

University of Portland EE 271 Electrical Circuits Laboratory. Experiment: Inductors University of Portland EE 271 Electrical Circuits Laboratory Experiment: Inductors I. Objective The objective of this experiment is to verify the relationship between voltage and current in an inductor,

More information

Laboratory #4: Solid-State Switches, Operational Amplifiers Electrical and Computer Engineering EE University of Saskatchewan

Laboratory #4: Solid-State Switches, Operational Amplifiers Electrical and Computer Engineering EE University of Saskatchewan Authors: Denard Lynch Date: Oct 24, 2012 Revised: Oct 21, 2013, D. Lynch Description: This laboratory explores the characteristics of operational amplifiers in a simple voltage gain configuration as well

More information

EXPERIMENT 1 PRELIMINARY MATERIAL

EXPERIMENT 1 PRELIMINARY MATERIAL EXPERIMENT 1 PRELIMINARY MATERIAL BREADBOARD A solderless breadboard, like the basic model in Figure 1, consists of a series of square holes, and those columns of holes are connected to each other via

More information

1. Hand Calculations (in a manner suitable for submission) For the circuit in Fig. 1 with f = 7.2 khz and a source vin () t 1.

1. Hand Calculations (in a manner suitable for submission) For the circuit in Fig. 1 with f = 7.2 khz and a source vin () t 1. Objectives The purpose of this laboratory project is to introduce to equipment, measurement techniques, and simulations commonly used in AC circuit analysis. In this laboratory session, each student will:

More information

Real Analog - Circuits 1 Chapter 11: Lab Projects

Real Analog - Circuits 1 Chapter 11: Lab Projects Real Analog - Circuits 1 Chapter 11: Lab Projects 11.2.1: Signals with Multiple Frequency Components Overview: In this lab project, we will calculate the magnitude response of an electrical circuit and

More information

ECE4902 C Lab 7

ECE4902 C Lab 7 ECE902 C2012 - Lab MOSFET Differential Amplifier Resistive Load Active Load PURPOSE: The primary purpose of this lab is to measure the performance of the differential amplifier. This is an important topology

More information

Lab #1 Lab Introduction

Lab #1 Lab Introduction Cir cuit s 212 Lab Lab #1 Lab Introduction Special Information for this Lab s Report Because this is a one-week lab, please hand in your lab report for this lab at the beginning of next week s lab. The

More information

ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits

ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits ENEE307 Lab 7 MOS Transistors 2: Small Signal Amplifiers and Digital Circuits In this lab, we will be looking at ac signals with MOSFET circuits and digital electronics. The experiments will be performed

More information

EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters

EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters EEC 118 Spring 2010 Lab #1: NMOS and PMOS Transistor Parameters Dept. of Electrical and Computer Engineering University of California, Davis March 18, 2010 Reading: Rabaey Chapter 3 [1]. Reference: Kang

More information

ENG 100 Lab #2 Passive First-Order Filter Circuits

ENG 100 Lab #2 Passive First-Order Filter Circuits ENG 100 Lab #2 Passive First-Order Filter Circuits In Lab #2, you will construct simple 1 st -order RL and RC filter circuits and investigate their frequency responses (amplitude and phase responses).

More information

Experiment #7: Designing and Measuring a Common-Emitter Amplifier

Experiment #7: Designing and Measuring a Common-Emitter Amplifier SCHOOL OF ENGINEERING AND APPLIED SCIENCE DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING ECE 2115: ENGINEERING ELECTRONICS LABORATORY Experiment #7: Designing and Measuring a Common-Emitter Amplifier

More information

Experiment No: 5. JFET Characteristics

Experiment No: 5. JFET Characteristics Experiment No: 5 JFET Characteristics Aim: 1. To study Drain Characteristics and Transfer Characteristics of a Junction Field Effect Transistor (JFET). 2. To measure drain resistance, trans-conductance

More information

EE 210 Lab Exercise #3 Introduction to PSPICE

EE 210 Lab Exercise #3 Introduction to PSPICE EE 210 Lab Exercise #3 Introduction to PSPICE Appending 4 in your Textbook contains a short tutorial on PSPICE. Additional information, tutorials and a demo version of PSPICE can be found at the manufacturer

More information

Lab 3 Power electronics

Lab 3 Power electronics 15-12-10 1(28) Lab 3 Power electronics Contents Introduction... 1 Initial setup... 2 Verifying correct LabVIEW interface with ELVIS... 2 Starting the LabVIEW software... 3 LabVIEW FB-Inverter control interface...

More information

Experiment 2 Introduction to PSpice

Experiment 2 Introduction to PSpice Experiment 2 Introduction to PSpice W.T. Yeung and R.T. Howe UC Berkeley EE 105 Fall 2004 1.0 Objective One of the CAD tools you will be using as a circuit designer is SPICE, a Berkeleydeveloped industry-standard

More information

EE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT

EE 320 L LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS. by Ming Zhu UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE 2. COMPONENTS & EQUIPMENT EE 320 L ELECTRONICS I LABORATORY 9: MOSFET TRANSISTOR CHARACTERIZATIONS by Ming Zhu DEPARTMENT OF ELECTRICAL AND COMPUTER ENGINEERING UNIVERSITY OF NEVADA, LAS VEGAS 1. OBJECTIVE Get familiar with MOSFETs,

More information

On-Line Students Analog Discovery 2: Arbitrary Waveform Generator (AWG). Two channel oscilloscope

On-Line Students Analog Discovery 2: Arbitrary Waveform Generator (AWG). Two channel oscilloscope EET 150 Introduction to EET Lab Activity 8 Function Generator Introduction Required Parts, Software and Equipment Parts Figure 1 Component /Value Quantity Resistor 10 kω, ¼ Watt, 5% Tolerance 1 Resistor

More information

0.85V. 2. vs. I W / L

0.85V. 2. vs. I W / L EE501 Lab3 Exploring Transistor Characteristics and Design Common-Source Amplifiers Lab report due on September 22, 2016 Objectives: 1. Be familiar with characteristics of MOSFET such as gain, speed, power,

More information

EE 230 Fall 2006 Experiment 11. Small Signal Linear Operation of Nonlinear Devices

EE 230 Fall 2006 Experiment 11. Small Signal Linear Operation of Nonlinear Devices EE 230 Fall 2006 Experiment 11 Small Signal Linear Operation of Nonlinear Devices Purpose: The purpose of this laboratory experiment is to investigate the use of small signal concepts for designing and

More information

LABORATORY 3: Transient circuits, RC, RL step responses, 2 nd Order Circuits

LABORATORY 3: Transient circuits, RC, RL step responses, 2 nd Order Circuits LABORATORY 3: Transient circuits, RC, RL step responses, nd Order Circuits Note: If your partner is no longer in the class, please talk to the instructor. Material covered: RC circuits Integrators Differentiators

More information

EECS 312: Digital Integrated Circuits Lab Project 1 Introduction to Schematic Capture and Analog Circuit Simulation

EECS 312: Digital Integrated Circuits Lab Project 1 Introduction to Schematic Capture and Analog Circuit Simulation EECS 312: Digital Integrated Circuits Lab Project 1 Introduction to Schematic Capture and Analog Circuit Simulation Teacher: Robert Dick GSI: Shengshuo Lu Assigned: 5 September 2013 Due: 17 September 2013

More information

ME 365 EXPERIMENT 1 FAMILIARIZATION WITH COMMONLY USED INSTRUMENTATION

ME 365 EXPERIMENT 1 FAMILIARIZATION WITH COMMONLY USED INSTRUMENTATION Objectives: ME 365 EXPERIMENT 1 FAMILIARIZATION WITH COMMONLY USED INSTRUMENTATION The primary goal of this laboratory is to study the operation and limitations of several commonly used pieces of instrumentation:

More information

Bring your textbook to lab.

Bring your textbook to lab. Bring your textbook to lab. Electrical & Computer Engineering Department ECE 2100 Experiment No. 11 Introduction to MOSFET Transistors A. Stolp, 4/3/01 rev,4/6/03 Minimum required points = 46 Recommend

More information

Electronics: Design and Build Training Session. Presented By: Dr. Shakti Singh Hazem Elgabra Amna Siddiqui

Electronics: Design and Build Training Session. Presented By: Dr. Shakti Singh Hazem Elgabra Amna Siddiqui Electronics: Design and Build Training Session Presented By: Dr. Shakti Singh Hazem Elgabra Amna Siddiqui Basic prototyping and measurement tools Breadboard basics Back View VCC GND VSS Breadboard basics

More information

EE 3101 ELECTRONICS I LABORATORY EXPERIMENT 7 LAB MANUAL MOSFET AMPLIFIER DESIGN AND ANALYSIS

EE 3101 ELECTRONICS I LABORATORY EXPERIMENT 7 LAB MANUAL MOSFET AMPLIFIER DESIGN AND ANALYSIS EE 3101 ELECTRONICS I LABORATORY EXPERIMENT 7 LAB MANUAL MOSFET AMPLIFIER DESIGN AND ANALYSIS OBJECTIVES In this experiment you will Learn procedures for working with static-sensitive devices. Construct

More information

FET Biasing. Electronic Circuit Design ME /8/2013. Spring Chapter 2. Chapter Contents. Course Support

FET Biasing. Electronic Circuit Design ME /8/2013. Spring Chapter 2. Chapter Contents. Course Support Spring 2013 2 Chapter 2 ME-2401 Electronic Circuit Design 4 th Semester (Mechatronics) SZABIST, Karachi 3 Chapter Contents 4 Course Support humera.rafique@szabist.edu.pk Office: 100 Campus (404) Ext. (120)

More information

ECE ECE285. Electric Circuit Analysis I. Spring Nathalia Peixoto. Rev.2.0: Rev Electric Circuits I

ECE ECE285. Electric Circuit Analysis I. Spring Nathalia Peixoto. Rev.2.0: Rev Electric Circuits I ECE285 Electric Circuit Analysis I Spring 2014 Nathalia Peixoto Rev.2.0: 140124. Rev 2.1. 140813 1 Lab reports Background: these 9 experiments are designed as simple building blocks (like Legos) and students

More information

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS

ANALOG FUNDAMENTALS C. Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS AV18-AFC ANALOG FUNDAMENTALS C Topic 4 BASIC FET AMPLIFIER CONFIGURATIONS 1 ANALOG FUNDAMENTALS C AV18-AFC Overview This topic identifies the basic FET amplifier configurations and their principles of

More information

Introduction to the Analog Discovery

Introduction to the Analog Discovery Introduction to the Analog Discovery The Analog Discovery from Digilent (http://store.digilentinc.com/all-products/scopes-instruments) is a versatile and powerful USB-connected instrument that lets you

More information

EECE 2413 Electronics Laboratory

EECE 2413 Electronics Laboratory EECE 2413 Electronics Laboratory Lab #5: MOSFETs and CMOS Goals This lab will introduce you to MOSFETs (metal-oxide-semiconductor field effect transistors). You will build a MOSFET inverter and determine

More information

Uncovering a Hidden RCL Series Circuit

Uncovering a Hidden RCL Series Circuit Purpose Uncovering a Hidden RCL Series Circuit a. To use the equipment and techniques developed in the previous experiment to uncover a hidden series RCL circuit in a box and b. To measure the values of

More information

Mentor Graphics OPAMP Simulation Tutorial --Xingguo Xiong

Mentor Graphics OPAMP Simulation Tutorial --Xingguo Xiong Mentor Graphics OPAMP Simulation Tutorial --Xingguo Xiong In this tutorial, we will use Mentor Graphics tools to design and simulate the performance of a two-stage OPAMP. The two-stage OPAMP is shown below,

More information

Electronic Circuits Laboratory EE462G Lab #6. Small Signal Models: The MOSFET Common Source Amplifier

Electronic Circuits Laboratory EE462G Lab #6. Small Signal Models: The MOSFET Common Source Amplifier Electronic Circuits Laboratory EE462G Lab #6 Small Signal Models: The MOSFET Common Source Amplifier AC and DC Analysis Amplifier circuits have DC and AC components that can be analyzed separately. The

More information